TWI431415B - A photomask unit comprising a photomask and a pellicle attached to the photomask and a method for fabricating a photomask unit - Google Patents
A photomask unit comprising a photomask and a pellicle attached to the photomask and a method for fabricating a photomask unit Download PDFInfo
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- TWI431415B TWI431415B TW100111267A TW100111267A TWI431415B TW I431415 B TWI431415 B TW I431415B TW 100111267 A TW100111267 A TW 100111267A TW 100111267 A TW100111267 A TW 100111267A TW I431415 B TWI431415 B TW I431415B
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- reticle
- photomask
- pellicle
- fixed
- pellicle frame
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- 230000001070 adhesive effect Effects 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 28
- 239000004065 semiconductor Substances 0.000 description 28
- 238000007687 exposure technique Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 16
- 239000000428 dust Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 238000011161 development Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
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- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 4
- -1 polyethylene Polymers 0.000 description 4
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- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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- 229920000178 Acrylic resin Polymers 0.000 description 2
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- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 2
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 2
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- 229920000573 polyethylene Polymers 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
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- 229920002301 cellulose acetate Polymers 0.000 description 1
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- 239000003822 epoxy resin Substances 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
Description
本發明係關於在生產大規模積體電路及超大規模積體電路等半導體裝置或液晶顯示器時，具有作為光罩(photomask)和精密光罩(reticle)等曝光用原版(本說明書中總稱為「光罩」)之防塵罩來使用的微影用防塵薄膜組件和光罩之光罩單元之製造方法。更具體而言，係關於使用波長極短之光，將感光膜曝光，適合形成微小圖案之光罩單元及光罩單元之製造方法。The present invention relates to an exposure original such as a photomask and a reticle when producing a semiconductor device such as a large-scale integrated circuit or a super large-scale integrated circuit or a liquid crystal display (referred to as "the present invention" in this specification. The lithographic dustproof film assembly and the photomask unit manufacturing method of the reticle are used for the dust cover of the reticle. More specifically, it is a method of manufacturing a mask unit and a mask unit which are suitable for forming a minute pattern by exposing a photosensitive film using light having a very short wavelength.
當生產大規模積體電路及超大規模集體電路等半導體設備或者液晶顯示器時，於半導體晶圓或液晶用原版上所形成之微影感光膜，通過光罩而受到曝光用之光照射，光罩之圖案被轉印，進而形成半導體設備或者液晶顯示器之圖案。When a semiconductor device such as a large-scale integrated circuit or a large-scale collective circuit or a liquid crystal display is produced, a lithographic photosensitive film formed on a semiconductor wafer or a liquid crystal original plate is irradiated with light for exposure through a photomask, and the photomask is irradiated. The pattern is transferred to form a pattern of a semiconductor device or a liquid crystal display.
因此，在這種情況下，光罩上附著有塵垢等異物時，附著於光罩表面的塵垢導致曝光用之光被反射或被吸收，於半導體晶圓或液晶用原版上所形成之感光膜上被轉印之圖案不僅會發生變形、圖案之邊緣部分變得不鮮明，而且底板發黑變臟，損傷產品之尺寸、質量、外形等，就無法將印光罩之圖案如願地轉印至半導體晶圓或液晶用原版，從而導致半導體裝置或液晶顯示器性能降低、成品率惡化等問題之發生。Therefore, in this case, when foreign matter such as dust adheres to the mask, the dirt adhering to the surface of the mask causes the light for exposure to be reflected or absorbed, and the photosensitive film formed on the semiconductor wafer or the original plate for liquid crystal. The pattern transferred on the surface will not only be deformed, the edge portion of the pattern will become unclear, and the bottom plate will become black and dirty, which will damage the size, quality and shape of the product, and the pattern of the printing mask will not be transferred to the semiconductor as desired. The original plate of the wafer or liquid crystal causes problems such as deterioration in performance of the semiconductor device or the liquid crystal display, deterioration of yield, and the like.
為防止有關問題之發生，半導體晶圓或液晶原版上所形成之感光膜之曝光，需在無塵室內進行，盡管如此，要完全避免光罩之表面附著異物也非常困難，所以，通常在光罩之表面安裝對曝光用之光有高穿透率之稱為防塵薄膜組件之防塵罩，而對半導體晶圓或液晶原版進行曝光。In order to prevent the occurrence of the problem, the exposure of the photosensitive film formed on the semiconductor wafer or the liquid crystal original plate needs to be performed in a clean room. However, it is very difficult to completely avoid the adhesion of foreign matter on the surface of the photomask, so usually in the light The surface of the cover is mounted with a dust cover called a pellicle for high transmittance of the light for exposure, and the semiconductor wafer or the liquid crystal original is exposed.
一般而言，防塵薄膜組件之製造如下：防塵薄膜由對曝光用光有高透射率之硝化纖維素、醋酸纖維素等纖維素系樹脂和氟化樹脂等製成；而防塵薄膜組件框架藉由鋁、不銹鋼、聚乙烯等形成；並在防塵薄膜組件框架一邊的面上，塗上防塵薄膜材料之良溶劑，並將防塵薄膜風乾進而黏接，或者用丙烯酸樹脂、環氧樹脂和氟樹脂等黏接劑來黏接防塵薄膜，並在防塵薄膜組件框架之另一表面，形成由聚丁烯樹脂、聚醋酸乙烯基樹脂、丙烯酸樹脂、矽酮樹脂等構成且供光罩附著之黏接層，再於黏接層上設置保護黏接層用的脫膜層乃至於分離器。(例如，參照日本特開昭和58-219023號公報，美國專利第4861402號說明書，日本特公昭和63-27707號公報及日本特開平成7-168345號公報等)。In general, the pellicle is manufactured as follows: the pellicle is made of a cellulose resin such as nitrocellulose or cellulose acetate having high transmittance for exposure light, and a fluorinated resin; and the pellicle frame is used by Aluminum, stainless steel, polyethylene, etc.; and on the side of the side of the pellicle frame, apply a good solvent for the pellant film, and dry the pell film to bond it, or use acrylic resin, epoxy resin, fluororesin, etc. Adhesive to adhere the pellicle film, and on the other surface of the pellicle frame, an adhesive layer composed of polybutene resin, polyvinyl acetate resin, acrylic resin, fluorenone resin, etc., and attached to the photomask is formed. Then, a release layer for protecting the adhesive layer or a separator is disposed on the adhesive layer. (For example, Japanese Patent Publication No. Sho. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei.
將如此構成之防塵薄膜組件安裝於光罩之表面，通過光罩，對於半導體晶圓或液晶原版上所形成之感光膜進行曝光時，塵垢等異物係附著於防塵薄膜組件之表面，並不直接附著於光罩之表面，所以只要以焦點位於在光罩上所形成之圖案的方式來照射曝光用之光，即能消除塵垢等異物之影響。The pellicle film assembly thus constructed is attached to the surface of the photomask, and when the photosensitive film formed on the semiconductor wafer or the liquid crystal original plate is exposed through the photomask, foreign matter such as dust adheres to the surface of the pellicle film assembly, and is not directly Since it is attached to the surface of the reticle, it is possible to eliminate the influence of foreign matter such as dust as long as the light for exposure is irradiated so that the focus is on the pattern formed on the reticle.
圖1是將防塵薄膜組件安裝於光罩之上之傳統光罩單元之簡單俯視圖，圖2是沿圖1之A-A線之簡單剖面圖。1 is a simplified plan view of a conventional reticle unit in which a pellicle is mounted on a reticle, and FIG. 2 is a simplified cross-sectional view taken along line A-A of FIG. 1.
如圖1及圖2所示，光罩單元1具有光罩2以及由防塵薄膜6及框架狀之防塵薄膜組件框架7所構成之防塵薄膜組件5，防塵薄膜6側部附近區域係黏附至防塵薄膜組件框架7一邊的表面，防塵薄膜組件框架7另一邊的表面則利用由有機物質形成之黏接劑(圖中未顯示)固定於光罩2之表面上。As shown in FIG. 1 and FIG. 2, the photomask unit 1 has a photomask 2 and a pellicle film assembly 5 composed of a pellicle film 6 and a frame-shaped pellicle frame 7, and the vicinity of the side portion of the pellicle film 6 is adhered to the dustproof. On the surface of one side of the film module frame 7, the other side of the pellicle frame 7 is fixed to the surface of the reticle 2 by an adhesive (not shown) formed of an organic substance.
如此，因光罩2之表面遮蓋有作為防塵罩之防塵薄膜組件5，在對半導體晶圓或液晶原版上所形成之感光膜進行曝光時，塵垢等異物係附著於防塵薄膜6之表面，並不直接附著於光罩2之表面，只要使曝光之光之焦點位於光罩2所形成之圖案上，即能消除塵垢等異物之影響。In this manner, when the surface of the photomask 2 is covered with the pellicle film 5 as a dust cover, when the photosensitive film formed on the semiconductor wafer or the liquid crystal original is exposed, foreign matter such as dust adheres to the surface of the pellicle 6 and It is not directly attached to the surface of the reticle 2, and the influence of foreign matter such as dust can be eliminated as long as the focus of the exposed light is placed on the pattern formed by the reticle 2.
另一方面，近年來，半導體設備及液晶顯示器之發展越來越高度積體化、微小化。現在，在感光膜上形成45nm左右的微小圖案之技術逐漸實用化。如果是45nm左右之圖案，只要利用在半導體晶圓或液晶用原版和投影鏡片之間填滿超純水等液體且使用氟化氬(ArF)準分子雷射來對感光膜進行曝光的浸潤式曝光技術，及雙重曝光等習知利用準分子雷射之曝光技術的改良即能因應。On the other hand, in recent years, the development of semiconductor devices and liquid crystal displays has become more and more integrated and miniaturized. Nowadays, a technique of forming a minute pattern of about 45 nm on a photosensitive film has been put into practical use. If it is a pattern of about 45 nm, an immersion type in which a photosensitive film is exposed by using a liquid such as ultrapure water between a semiconductor wafer or a liquid crystal original plate and a projection lens and using an argon fluoride (ArF) excimer laser is used. Exposure techniques, and double exposures, etc., are known to improve with exposure techniques using excimer lasers.
但是，下一代半導體設備和液晶顯示器要求形成更加微小化的32nm以下之圖案，而要形成如此細小化的32nm以下之圖案，已不可能藉由改良傳統使用準分子雷射之曝光技術來因應，就形成32nm或其以下圖案之方法而言，使用主波長為13.5nm之EUV(Extreme Ultra Violet，超紫外線)光來形成圖案之EUV曝光技術被視為正選。However, the next generation of semiconductor devices and liquid crystal displays are required to form a more subtle pattern of 32 nm or less, and it is impossible to form such a fine pattern of 32 nm or less, which is improved by the conventional exposure technique using excimer lasers. For the method of forming a pattern of 32 nm or less, an EUV exposure technique using EUV (Extreme Ultra Violet) light having a dominant wavelength of 13.5 nm to form a pattern is regarded as a positive selection.
使用此EUV曝光技術，於感光膜上形成32nm以下的微小圖案時，必須解決使用何種光源、使用何種感光膜、使用何種防塵薄膜組件等技術性問題。When using this EUV exposure technique to form a micro pattern of 32 nm or less on a photosensitive film, it is necessary to solve the technical problems such as which light source is used, which photosensitive film is used, and what kind of pellicle component is used.
其中，隨著開發之進展，有關新光源及新之感光膜材料已有各種建議，但是，左右半導體設備或液晶顯示器之成品率之防塵薄膜組件，雖然建議使用作為對EUV光有高透射率之材料之矽，但是仍留有尚未解決之問題，對於EUV曝光技術之實用化形成很大之障礙(例如，參照Shroff et al. "EUV pellicle Development for Mask Defect Control," Emerging Lithographic Technologies X,Proc of SPIE Vol. 6151 615104-1(2006)及美國專利第6623893號說明書)。Among them, with the development of development, various proposals have been made regarding new light sources and new photosensitive film materials, but the pellicle components of the yield of semiconductor devices or liquid crystal displays are recommended to be used as high transmittance for EUV light. The flaws in materials, but still have unresolved problems, pose great obstacles to the practical application of EUV exposure technology (for example, see Shroff et al. "EUV pellicle Development for Mask Defect Control," Emerging Lithographic Technologies X, Proc of SPIE Vol. 6151 615104-1 (2006) and US Patent No. 6623893).
[專利文獻1]日本特開昭和58-219023號公報[Patent Document 1] Japanese Laid-Open Patent Publication No. 58-219023
[專利文獻2]美國專利第4861402號說明書[Patent Document 2] US Patent No. 4,861,402
[專利文獻3]日本特公昭和63-27707號公報[Patent Document 3] Japanese Patent Publication No. 63-27707
[專利文獻4]日本特開平成7-168345號公報[Patent Document 4] Japanese Laid-Open Patent Publication No. 7-183345
[專利文獻5]美國專利第6623893號說明書[Patent Document 5] US Patent No. 6623893
[非專利文獻1] Shroff et al. “EUV pellicle Development for Mask Defect Control,”Emerging Lithographic Technologies X,Proc of SPIE Vol.6151 615104-1(2006)[Non-Patent Document 1] Shroff et al. "EUV pellicle Development for Mask Defect Control," Emerging Lithographic Technologies X, Proc of SPIE Vol. 6151 615104-1 (2006)
習知使用i線(波長365nm)之曝光，在使用KrF準分子雷射光(波長248nm)之曝光，使用氟化氬(ArF)準分子雷射光(波長193nm)之曝光中，係將貼附有防塵薄膜之防塵薄膜組件框架利用由有機物質構成之黏接劑而安裝在光罩上，但是，若使用EUV曝光技術於感光膜上形成32nm或其以下之微小圖案時，曝光室內必須保持真空狀態。一旦使用由有機物質構成之黏接劑，將產生釋出氣體(out gas)，而導致難以將防塵薄膜組件框架用由有機物質構成之黏接劑安裝在光罩上，在光罩附近必須極力避免使用由有機物質構成之黏接劑。Conventional exposure using i-line (wavelength 365 nm), exposure using KrF excimer laser light (wavelength 248 nm), exposure using argon fluoride (ArF) excimer laser light (wavelength 193 nm), will be attached The pellicle film frame of the pellicle film is mounted on the reticle by using an adhesive composed of an organic substance, but if an EUV exposure technique is used to form a micro pattern of 32 nm or less on the photosensitive film, the exposure chamber must be kept in a vacuum state. . Once an adhesive composed of an organic substance is used, an out gas is generated, which makes it difficult to mount the pellicle frame with an adhesive composed of an organic substance on the reticle, and must be in the vicinity of the reticle. Avoid using adhesives made of organic materials.
另外，採用EUV曝光技術以在感光膜上形成微小之圖案時，要求光罩具有高平坦度，但使用由有機物質構成之黏接劑來將防塵薄膜組件安裝在光罩上時，也會有光罩之平坦度惡化之問題。In addition, when the EUV exposure technique is used to form a minute pattern on the photosensitive film, the mask is required to have high flatness, but when the adhesive film made of an organic substance is used to mount the pellicle assembly on the photomask, there is also The problem of flatness of the mask is deteriorated.
因此，本發明目的在於提供一種具有防塵薄膜組件以及防塵薄膜組件所遮蓋的光罩之光罩單元，適合使用EUV曝光技術於感光膜上形成32nm以下之微小圖案並能確實地防止光罩之平坦度惡化。Therefore, an object of the present invention is to provide a photomask unit having a pellicle and a photomask covered by a pellicle, which is suitable for forming a micro pattern of 32 nm or less on a photosensitive film by using an EUV exposure technique and can reliably prevent the mask from being flat. Degree deteriorated.
此外，本發明之另一目的在於提供一種由防塵薄膜組件以及防塵薄膜組件所遮蓋的光罩之光罩單元之製造方法，適合使用EUV曝光技術於感光膜上形成32nm以下之微小圖案並能確實地防止光罩之平坦度惡化。Further, another object of the present invention is to provide a method of manufacturing a photomask unit of a photomask covered by a pellicle and a pellicle, which is suitable for forming a micro pattern of 32 nm or less on a photosensitive film by using an EUV exposure technique. To prevent the flatness of the mask from deteriorating.
本發明之目的藉由下述方式達成：一種光罩單元，包含：防塵薄膜；防塵薄膜組件框架，其形成框架狀，一邊的表面受到該防塵薄膜之側部附近區域所貼附；光罩；以及平台，於其一邊的表面固定有該光罩及該防塵薄膜組件框架；其特徵在於，該防塵薄膜組件框架，在比該平台上固定該光罩的區域更外側處固定於該平台上。The object of the present invention is achieved by a reticle unit comprising: a dustproof film; a pellicle frame, which is formed in a frame shape, and a surface of one side is attached by a region near a side portion of the pell film; a reticle; And the platform, the photomask and the pellicle frame are fixed on a surface thereof; wherein the pellicle frame is fixed to the platform at a position outside the region where the reticle is fixed on the platform.
依據本發明，在一邊的面上貼設有防塵薄膜之側部附近區域的防塵薄膜組件框架，係藉由比平台上固定光罩的區域之外側來固定在平台上，因防塵薄膜組件框架之平台之安裝部係與光罩之曝光圖案部隔開，所以在使用EUV曝光技術且保持曝光室內真空的狀態下，在感光膜上形成32nm以下之微小圖案時，即使從由有機物質形成之黏接劑中發生外部氣體，也可有效地防止對於半導體設備或液晶顯示器上所形成之感光膜之曝光產生惡劣影響。According to the present invention, the pellicle frame of the vicinity of the side portion of the pellicle is attached to one side of the surface, and is fixed to the platform by the outer side of the region where the reticle is fixed on the platform, because the platform of the pellicle frame is Since the mounting portion is spaced apart from the exposure pattern portion of the photomask, when a micro pattern of 32 nm or less is formed on the photosensitive film while the vacuum in the exposure chamber is maintained using the EUV exposure technique, even if it is formed by bonding with an organic substance The generation of an external gas in the agent can also effectively prevent adverse effects on the exposure of the photosensitive film formed on the semiconductor device or the liquid crystal display.
並且，依據本發明，防塵薄膜組件框架在平台上係固定至固定有光罩的平台區域之外側，並未如習知方式固定在光罩之上，所以能確實地防止光罩之平坦度發生惡化。Moreover, according to the present invention, the pellicle frame is fixed to the outer side of the platform region to which the reticle is fixed on the platform, and is not fixed on the reticle as in the conventional manner, so that the flatness of the reticle can be surely prevented from occurring. deterioration.
在本發明中，前述防塵薄膜組件框架宜由金屬製成。In the present invention, the aforementioned pellicle frame is preferably made of metal.
本發明之較佳實施形態為，該防塵薄膜組件框架係利用靜電吸盤而固定在該平台的一邊表面上。In a preferred embodiment of the present invention, the pellicle frame is fixed to one side surface of the platform by means of an electrostatic chuck.
依據本發明之較佳實施形態，因防塵薄膜組件框架係利用靜電吸盤而固定在平台的一邊表面上，所以在使用EUV曝光技術且保持曝光室內真空的狀態下，於感光膜上形成32nm以下之微小圖案時，能確實地防止從防塵薄膜組件框架之平台之安裝部產生釋出氣體。According to a preferred embodiment of the present invention, since the pellicle frame is fixed to one side surface of the stage by means of an electrostatic chuck, the EUV exposure technique is used to maintain a vacuum in the exposure chamber, and 32 nm or less is formed on the photosensitive film. In the case of a minute pattern, the release of gas from the mounting portion of the platform of the pellicle frame can be reliably prevented.
本發明之另一個較佳實施形態為，該防塵薄膜組件框架係利用機械方式而固定在該平台的一邊表面上。According to another preferred embodiment of the present invention, the pellicle frame is mechanically fixed to one side surface of the platform.
依據本發明之另一個較佳實施形態，因防塵薄膜組件框架係利用釦釘、螺釘等機械方式而固定在平台的一邊表面上，所以在使用EUV曝光技術且保持曝光室內真空的狀態下，於感光膜上形成32nm以下之微小圖案時，能確實地防止從防塵薄膜組件框架向平台之安裝部產生釋出氣體。According to another preferred embodiment of the present invention, since the pellicle frame is fixed to one side surface of the platform by mechanical means such as a pin or a screw, the EUV exposure technique is used and the vacuum in the exposure chamber is maintained. When a minute pattern of 32 nm or less is formed on the photosensitive film, generation of gas released from the pellicle frame to the mounting portion of the stage can be reliably prevented.
在本發明之其他之較佳實施形態中，該防塵薄膜組件框架係利用黏接劑而固定在該平台的一邊表面上。In another preferred embodiment of the present invention, the pellicle frame is fixed to one side surface of the platform by an adhesive.
本發明之目的還藉由下述方式達成：該光罩單元係包含：防塵薄膜；防塵薄膜組件框架，其呈框架狀，該防塵薄膜之側部附近區域貼附在此防塵薄膜組件框架之一邊的表面；光罩；以及平台，其一邊的表面固定有該光罩及該防塵薄膜組件框架；其特徵在於，將該光罩固定於該平台的一邊表面上，並將該防塵薄膜組件框架的另一面在比該平台上固定該光罩的區域更外側處固定於該平台上。The object of the present invention is also achieved by the following steps: the reticle unit comprises: a dustproof film; a pellicle frame, which is in the form of a frame, and a region near the side of the pell film is attached to one side of the pellicle frame a reticle; and a platform on which a surface of one side is fixed with the reticle and the pellicle frame; wherein the reticle is fixed to one side surface of the platform, and the pellicle frame is The other side is fixed to the platform at a more outer side than the area on the platform where the reticle is fixed.
依據本發明，將一邊表面貼設有防塵薄膜之側部附近區域之防塵薄膜組件框架，在平台上固定於比固定有光罩的平台之範圍之外側，因防塵薄膜組件框架之平台之安裝部係與光罩之曝光圖案部隔開，所以在使用EUV曝光技術且保持曝光室內之真空的狀態下，於感光膜上形成32nm或其以下之微小圖案時，即使在從由有機物質形成之黏接劑中產生釋出氣體之情況下，也能有效防止對半導體設備或液晶顯示器上所形成感光膜之曝光所產生之惡劣影響。According to the present invention, the pellicle frame having the side surface in the vicinity of the side portion of the pellicle is attached to the outside of the range of the platform to which the photomask is fixed, and the mounting portion of the platform of the pellicle frame is attached. Since it is separated from the exposure pattern portion of the reticle, when a micro pattern of 32 nm or less is formed on the photosensitive film in a state where the vacuum in the exposure chamber is maintained by using the EUV exposure technique, even when it is formed from an organic substance In the case where a gas is evolved in the agent, the adverse effect on the exposure of the photosensitive film formed on the semiconductor device or the liquid crystal display can be effectively prevented.
並且，依據本發明，防塵薄膜組件框架在光罩之外側被固定於平台上，並未如習知方式固定在光罩上，所以能確實地防止光罩之平坦度惡化。Further, according to the present invention, the pellicle frame is fixed to the stage on the outer side of the reticle and is not fixed to the reticle as in the conventional manner, so that the flatness of the reticle can be surely prevented from deteriorating.
本發明之較佳實施形態為，該防塵薄膜組件框架係利用靜電吸盤而固定在該平台的一邊表面上。In a preferred embodiment of the present invention, the pellicle frame is fixed to one side surface of the platform by means of an electrostatic chuck.
依據本發明之較佳實施形態，因防塵薄膜組件框架係利用靜電吸盤而固定於平台的一邊表面上，在使用EUV曝光技術且保持曝光室內真空的狀態下，於感光膜上形成32nm或其以下之微小圖案之時候，能確實地防止從防塵薄膜組件框架之平台之安裝部產生釋出氣體。According to a preferred embodiment of the present invention, the pellicle frame is fixed to one side surface of the stage by an electrostatic chuck, and 32 nm or less is formed on the photosensitive film while using the EUV exposure technique and maintaining the vacuum in the exposure chamber. At the time of the minute pattern, the release of gas from the mounting portion of the platform of the pellicle frame can be reliably prevented.
本發明之另外之較佳實施形態為，該防塵薄膜組件框架係利用機械方式而固定在該平台的一邊表面上。According to still another preferred embodiment of the present invention, the pellicle frame is mechanically fixed to one side surface of the platform.
依據本發明之另外之較佳實施形態，因防塵薄膜組件框架係利用釦釘、螺釘等機械方式而固定在平台的一邊表面上，所以使用EUV曝光技術而在保持曝光室內真空的狀態下，於感光膜上形成32nm或其以下之微小圖案時，能確實地防止從防塵薄膜組件框架之平台之安裝部產生釋出氣體。According to another preferred embodiment of the present invention, since the pellicle frame is fixed to one side surface of the platform by mechanical means such as a pin or a screw, the EUV exposure technique is used to maintain the vacuum in the exposure chamber. When a minute pattern of 32 nm or less is formed on the photosensitive film, generation of gas released from the mounting portion of the stage of the pellicle frame can be reliably prevented.
本發明之其他較佳實施形態為，該防塵薄膜組件框架係利用黏接劑而固定在該平台的一邊表面上。According to another preferred embodiment of the present invention, the pellicle frame is fixed to one side surface of the platform by an adhesive.
本發明之目的及特徵可藉由以下引用圖式的說明而明晰。The objects and features of the present invention will become apparent from the following description.
依據本發明，可提供一種具有光罩及遮蓋光罩之防塵薄膜組件的光罩單元，其適合使用EUV曝光技術於感光膜上形成32nm以下之微小圖案，能確實地防止光罩之平坦度發生變差。According to the present invention, a photomask unit having a photomask and a pellicle film covering the photomask can be provided, which is suitable for forming a micro pattern of 32 nm or less on the photosensitive film by using an EUV exposure technique, and can reliably prevent the flatness of the photomask from occurring. Getting worse.
此外，依據本發明，可提供一種具有光罩及遮蓋光罩之防塵薄膜組件的光罩單元的製造方法，其適合使用EUV曝光技術於感光膜上形成32nm以下之微小圖案，能確實地防止光罩之平坦度發生惡化。Further, according to the present invention, it is possible to provide a method of manufacturing a photomask unit having a photomask and a pellicle film covering the photomask, which is suitable for forming a micro pattern of 32 nm or less on the photosensitive film by using an EUV exposure technique, and can surely prevent light. The flatness of the cover deteriorates.
圖3為具有光罩以及遮蓋光罩之防塵薄膜組件的本發明較佳實施形態之光罩單元之簡略透視俯視圖。圖4為沿圖3中光罩單元之B-B線之簡略剖面圖。3 is a schematic perspective plan view of a reticle unit of a preferred embodiment of the present invention having a reticle and a pellicle assembly covering the reticle. Figure 4 is a schematic cross-sectional view taken along line B-B of the reticle unit of Figure 3;
如圖3及圖4所示，本實施形態之光罩單元1包含：光罩2；光罩平台3，固定有光罩2；防塵薄膜6；以及框架狀之防塵薄膜組件框架7，其一邊的表面貼設有防塵薄膜6；並且，藉由防塵薄膜6和防塵薄膜組件框架7而形成防塵薄膜組件5。在本實施形態之中，防塵薄膜組件框架7係由鋁製成。As shown in FIGS. 3 and 4, the reticle unit 1 of the present embodiment includes a reticle 2, a reticle stage 3 to which a reticle 2 is fixed, a pellicle film 6, and a frame-shaped pellicle frame 7 on one side. The surface of the surface is provided with a pellicle film 6; and the pellicle film 5 is formed by the pellicle film 6 and the pellicle frame 7. In the present embodiment, the pellicle frame 7 is made of aluminum.
如圖3及圖4所示，防塵薄膜組件框架7之尺寸大於光罩2之尺寸。防塵薄膜組件框架7係在比光罩平台3上固定光罩2的區域更外側處固定於光罩平台3上，光罩2收納在由防塵薄膜6與防塵薄膜組件框架7所形成之密閉空間內。As shown in FIGS. 3 and 4, the size of the pellicle frame 7 is larger than the size of the reticle 2. The pellicle frame 7 is fixed to the reticle stage 3 at a position outside the region where the reticle 2 is fixed to the reticle stage 3, and the reticle 2 is housed in a sealed space formed by the pellicle 6 and the pellicle frame 7 Inside.
在本實施形態中，光罩2利用靜電吸盤(未圖示)而固定在光罩平台3之上。In the present embodiment, the photomask 2 is fixed to the mask platform 3 by an electrostatic chuck (not shown).
另一方面，在本實施形態中，可將防塵薄膜組件框架7以靜電吸盤固定在光罩平台3上，也可使用釦釘、螺釘等機械方式(未圖示)將防塵薄膜組件框架7良好地固定在光罩平台3上，並且也能使用由矽酮黏接劑等有機物質組成之黏接劑將防塵薄膜組件框架7固定在光罩平台3之上。On the other hand, in the present embodiment, the pellicle frame 7 can be fixed to the mask platform 3 by the electrostatic chuck, or the pellicle frame 7 can be made good by mechanical means (not shown) such as a pin or a screw. The grounding film is fixed to the reticle stage 3, and the pellicle frame 7 can also be fixed on the reticle stage 3 using an adhesive composed of an organic substance such as an fluorenketone adhesive.
這樣製造的光罩單元1被組裝至曝光室內(未圖示)，半導體晶圓或液晶用原版上所塗之感光膜，通過光罩2而受到曝光用之光照射，光罩2之圖案被轉印，進而形成半導體晶圓或液晶用原版之圖案。The mask unit 1 thus manufactured is assembled into an exposure chamber (not shown), and the photosensitive film coated on the semiconductor wafer or the liquid crystal original plate is irradiated with light for exposure through the mask 2, and the pattern of the mask 2 is Transfer, and further form a pattern of a semiconductor wafer or a liquid crystal original.
依據本實施形態，光罩2和防塵薄膜組件框架7係利用靜電吸盤而固定在光罩平台3上。因防塵薄膜組件框架7之尺寸大於光罩2之尺寸，防塵薄膜組件框架7利用靜電吸盤而在比光罩平台3上固定光罩2的區域更外側處固定於光罩平台3上。因此，即使在保持曝光室內真空的狀態下使用EUV光，將半導體晶圓或液晶用原版(未圖示)之感光膜曝光，也不會產生釋出氣體。因而，在保持曝光室內真空的狀態下，於半導體晶圓或液晶用原版上所塗之感光膜上形成32nm以下之微小圖案時，能提高半導體晶圓或液晶顯示器之成品率。According to the present embodiment, the photomask 2 and the pellicle frame 7 are fixed to the mask stage 3 by means of an electrostatic chuck. Since the size of the pellicle frame 7 is larger than the size of the reticle 2, the pellicle frame 7 is fixed to the reticle stage 3 at the outer side of the region where the reticle 2 is fixed on the reticle stage 3 by means of an electrostatic chuck. Therefore, even if the EUV light is used while maintaining the vacuum in the exposure chamber, the semiconductor wafer or the liquid crystal is exposed to the photosensitive film of the original plate (not shown), and no released gas is generated. Therefore, when a micro pattern of 32 nm or less is formed on the photosensitive film coated on the semiconductor wafer or the liquid crystal original in a state where the vacuum in the exposure chamber is maintained, the yield of the semiconductor wafer or the liquid crystal display can be improved.
另外，依據本實施形態，防塵薄膜組件框架7係在比光罩平台3上固定光罩2的區域更外側處固定於光罩平台3上，並未如習知方式固定在光罩2之表面上，所以能將安裝防塵薄膜組件5所導致之光罩2之平坦度惡化抑制到最小限度。Further, according to the present embodiment, the pellicle frame 7 is fixed to the reticle stage 3 at a position outside the region where the reticle 2 is fixed to the reticle stage 3, and is not fixed to the surface of the reticle 2 as is conventionally known. Therefore, the deterioration of the flatness of the reticle 2 caused by the installation of the pellicle 5 can be minimized.
圖5為有關本發明之另一較佳實施形態，其為由光罩以及遮蓋光罩之防塵薄膜組件構成之光罩單元之簡略透視俯視圖，圖6為沿圖5之光罩單元之C-C線之簡略剖面圖。Figure 5 is a schematic perspective plan view of a reticle unit comprising a reticle and a pellicle module covering the reticle, and Figure 6 is a CC line along the reticle unit of Figure 5; A brief cross-sectional view.
如圖5及圖6所示，本實施形態之光罩單元1與上述實施形態同樣地包含：光罩2；固定有光罩2之光罩平台3；防塵薄膜6；以及框架狀之防塵薄膜組件框架7，其一邊的表面貼設有防塵薄膜6；並且，藉由防塵薄膜6和防塵薄膜組件框架7構成防塵薄膜組件5。在本實施形態中，防塵薄膜組件框架7也由鋁製成。As shown in FIGS. 5 and 6, the photomask unit 1 of the present embodiment includes a photomask 2, a mask base 3 to which the mask 2 is fixed, a pellicle film 6, and a frame-shaped pellicle film, as in the above-described embodiment. The component frame 7 is provided with a pellicle film 6 on one surface thereof; and the pellicle film 5 is constituted by the pellicle film 6 and the pellicle frame 7. In the present embodiment, the pellicle frame 7 is also made of aluminum.
如圖5及圖6所示，防塵薄膜組件框架7之尺寸大於光罩2之尺寸，防塵薄膜組件框架7係在比光罩平台3上固定光罩2的區域更外側處固定於光罩平台3上。As shown in FIGS. 5 and 6, the size of the pellicle frame 7 is larger than the size of the reticle 2, and the pellicle frame 7 is fixed to the reticle platform at a position outside the region where the reticle 2 is fixed on the reticle stage 3. 3 on.
在本實施形態中，也可將光罩2利用靜電吸盤固定在光罩平台3上。In the present embodiment, the mask 2 may be fixed to the mask platform 3 by an electrostatic chuck.
如圖5及圖6所顯示，在有關本實施形態之光罩單元1中，防塵薄膜組件框架7係利用機械式釦釘9而固定在光罩平台3上。As shown in FIGS. 5 and 6, in the reticle unit 1 of the present embodiment, the pellicle frame 7 is fixed to the reticle stage 3 by mechanical fasteners 9.
這樣，製造出來之光罩單元1組裝至曝光室(未圖示)內，半導體晶圓或液晶用原版上所塗之感光膜上，通過光罩2受到曝光用之光照射，光罩2之圖案被轉印，進而形成半導體晶圓或液晶用原版之圖案。Thus, the manufactured photomask unit 1 is assembled into an exposure chamber (not shown), and the photosensitive film coated on the semiconductor wafer or the liquid crystal original plate is irradiated with light for exposure through the photomask 2, and the photomask 2 is irradiated. The pattern is transferred to form a pattern of a semiconductor wafer or a liquid crystal original.
根據本實施形態，防塵薄膜組件框架7之尺寸大於光罩2之尺寸，防塵薄膜組件框架7利用機械式釦釘9而在比光罩平台3上固定光罩2的區域更外側處固定於光罩平台3上。因此，即使在保持曝光室內真空的狀態下使用EUV光將半導體晶圓或液晶用原版(未圖示)之感光膜曝光，也不產生釋出氣體。因而，在保持曝光室內真空的狀況下於半導體晶圓或液晶用原版上所塗之感光膜上形成32nm以下之微小圖案時，能提高半導體晶圓或者液晶顯示器之成品率。According to the present embodiment, the size of the pellicle frame 7 is larger than the size of the reticle 2, and the pellicle frame 7 is fixed to the outside by the mechanical pin 9 at a position outside the region where the reticle 2 is fixed on the reticle stage 3. Cover the platform 3. Therefore, even if the semiconductor wafer or the liquid crystal is exposed to the photosensitive film of the original plate (not shown) by using EUV light while maintaining the vacuum in the exposure chamber, no gas is released. Therefore, when a micro pattern of 32 nm or less is formed on the photosensitive film coated on the semiconductor wafer or the liquid crystal original in a state where the vacuum in the exposure chamber is maintained, the yield of the semiconductor wafer or the liquid crystal display can be improved.
另外，根據本實施形態，防塵薄膜組件框架7係在比光罩平台3上固定光罩2的區域更外側處固定於光罩平台3上，並未如習知方式固定在光罩2之表面，所以能將安裝防塵薄膜組件5所導致的光罩之平坦度變差被抑制到最小限度。Further, according to the present embodiment, the pellicle frame 7 is fixed to the reticle stage 3 at a position outside the region where the reticle 2 is fixed to the reticle stage 3, and is not fixed to the surface of the reticle 2 as is conventionally known. Therefore, it is possible to suppress the flatness of the reticle caused by the installation of the pellicle assembly 5 to a minimum.
以下，為了表明本發明之效果，提出實施例及比較例。Hereinafter, in order to demonstrate the effects of the present invention, examples and comparative examples are proposed.
[實施例1][Example 1]
在形成邊長152mm之正方形且厚度為6mm之石英製之光罩基板的一邊表面上蒸鍍鉻膜，並將光罩基板之另一表面利用靜電吸盤固定於光罩平台上。A chromium film was vapor-deposited on one surface of a quartz mask substrate having a square shape of 152 mm and a thickness of 6 mm, and the other surface of the mask substrate was fixed to the mask platform by an electrostatic chuck.
其次，將形成內框邊長160mm、外框邊長166mm之長方形框架狀且厚度3mm的鋁製防塵薄膜組件框架利用靜電吸盤而在比光罩平台上固定光罩基板的區域更外側處固定於光罩平台上，藉以製成光罩單元。Next, an aluminum pellicle frame having a rectangular frame shape with an inner frame side length of 160 mm and an outer frame side length of 166 mm and a thickness of 3 mm is fixed to the outer side of the region where the photomask substrate is fixed on the mask stage by the electrostatic chuck. The reticle unit is formed on the reticle platform.
接著，作為光罩單元在實際生產線所接受的高速掃描運動之模擬實驗而言，以施加約5G之加速度的方式使光罩平台震動經過10分鐘，即使防塵薄膜組件框架僅利用機械式靜電吸盤而固定在光罩平台上，仍未觀察到防塵薄膜組件框架從初始位置發生位移。Next, as a simulation experiment of the high-speed scanning motion accepted by the reticle unit in the actual production line, the reticle stage was shaken for 10 minutes by applying an acceleration of about 5 G, even if the pellicle frame was only mechanically electrostatically sucked. Fixed on the reticle stage, no displacement of the pellicle frame from the initial position was observed.
然後，使用波長13.5nm之EUV光間斷地對光罩單元進行總計3分鐘之照射，並測量經EUV光照射後的光罩之反射率。如此測定之光罩之反射率，與用EUV光照射前之反射率相比較，並未觀察到反射率降低。Then, the reticle unit was intermittently irradiated for a total of 3 minutes using EUV light having a wavelength of 13.5 nm, and the reflectance of the reticle irradiated with EUV light was measured. The reflectance of the mask thus measured was not observed to have a decrease in reflectance as compared with the reflectance before irradiation with EUV light.
[實施例2][Embodiment 2]
在形成邊長152mm之正方形且厚度6mm的石英製之光罩基板的一邊表面上蒸鍍鉻膜，並將光罩基板之另一表面利用靜電吸盤固定於光罩平台上。A chromium film was vapor-deposited on one surface of a quartz mask substrate having a square shape of 152 mm and a thickness of 6 mm, and the other surface of the mask substrate was fixed to the mask platform by an electrostatic chuck.
其次將形成內框邊長160mm、外框邊長166mm之長方形框架狀且厚度3mm厚的鋁製防塵薄膜組件框架利用機械式釦釘而在比光罩平台上固定光罩基板的區域更外側處固定於光罩平台上，藉以製成光罩單元。Next, an aluminum pellicle frame having a rectangular frame shape with an inner frame side length of 160 mm and an outer frame side length of 166 mm and a thickness of 3 mm thick is formed at the outer side of the region where the photomask substrate is fixed on the reticle stage by using a mechanical fastener. It is fixed on the reticle platform to make a reticle unit.
然後，作為光罩單元在實際生產線所接受的高速掃描運動之模擬實驗而言，以施加約5G之加速度的方式使光罩平台震動經過10分鐘，即使防塵薄膜組件框架僅利用機械式釦釘而固定在光罩平台上，仍未觀察到防塵薄膜組件框架從初始位置發生位移。Then, as a simulation experiment of the high-speed scanning motion accepted by the reticle unit in the actual production line, the reticle stage was shaken for 10 minutes by applying an acceleration of about 5 G, even if the pellicle frame was only mechanically studded. Fixed on the reticle stage, no displacement of the pellicle frame from the initial position was observed.
並且，使用波長13.5nm之EUV光間斷地對光罩單元進行總計3分鐘之照射，並測量經EUV光照射後的光罩之反射率。如此測定之光罩之反射率，與用EUV光照射前之反射率相比較，並未觀察到反射率降低。Further, the mask unit was intermittently irradiated with EUV light having a wavelength of 13.5 nm for a total of 3 minutes, and the reflectance of the mask after the EUV light irradiation was measured. The reflectance of the mask thus measured was not observed to have a decrease in reflectance as compared with the reflectance before irradiation with EUV light.
[實施例3][Example 3]
在形成邊長152mm之正方形且厚度6mm的石英製之光罩基板的一邊表面上蒸鍍鉻膜，並將光罩基板之另一表面利用靜電吸盤固定於光罩平台上。A chromium film was vapor-deposited on one surface of a quartz mask substrate having a square shape of 152 mm and a thickness of 6 mm, and the other surface of the mask substrate was fixed to the mask platform by an electrostatic chuck.
其次，將形成內框一邊長為160mm、外框邊長為166mm之長方形框架狀且厚度3mm厚的鋁製防塵薄膜組件框架利用矽酮黏接劑而在比光罩平台上固定光罩基板的區域更外側處固定於光罩平台上，藉以製成光罩單元。Next, an aluminum pellicle frame having a rectangular frame shape with a length of 160 mm on the inner frame side and a side frame length of 166 mm and a thickness of 3 mm is formed by using an oxime adhesive to fix the reticle substrate on the reticle stage. The outer side of the area is fixed to the reticle stage to form a reticle unit.
然後，作為光罩單元在實際生產線所接受的高速掃描運動之模擬實驗而言，以施加約5G之加速度的方式使光罩平台震動經過10分鐘，即使防塵薄膜組件框架僅利用矽酮黏接劑被固定在光罩平台上，仍未觀察到防塵薄膜組件框架從初始位置發生位移。Then, as a simulation experiment of the high-speed scanning motion accepted by the reticle unit in the actual production line, the reticle platform is shaken for 10 minutes by applying an acceleration of about 5 G, even if the pellicle frame only utilizes the fluorene ketone adhesive. Fixed on the reticle stage, no displacement of the pellicle frame from the initial position was observed.
並且，使用波長13.5nm之EUV光間斷地對光罩單元進行總計3分鐘之照射，並測量經EUV光照射後的光罩之反射率。如此測定之光罩之反射率，與用EUV光照射前之反射率相比較，並未觀察到反射率降低。Further, the mask unit was intermittently irradiated with EUV light having a wavelength of 13.5 nm for a total of 3 minutes, and the reflectance of the mask after the EUV light irradiation was measured. The reflectance of the mask thus measured was not observed to have a decrease in reflectance as compared with the reflectance before irradiation with EUV light.
[比較例][Comparative example]
在形成邊長152mm之正方形且厚度6mm的石英製之光罩基板的一邊表面上蒸鍍鉻膜，並將光罩基板之另一表面利用靜電吸盤固定於光罩平台上。A chromium film was vapor-deposited on one surface of a quartz mask substrate having a square shape of 152 mm and a thickness of 6 mm, and the other surface of the mask substrate was fixed to the mask platform by an electrostatic chuck.
其次，將形成內框邊長143mm、外框邊長149mm之長方形框架狀且厚度3mm的鋁製防塵薄膜組件框架，利用矽酮黏接劑固定在光罩基板上，藉以製成光罩單元。Next, an aluminum pellicle frame having a rectangular frame shape of 143 mm in the inner frame and 149 mm in the outer frame side and having a thickness of 3 mm was formed on the photomask substrate by using an anthrone adhesive, thereby forming a photomask unit.
然後，作為光罩單元在實際之生產線所接受的高速掃描運動之模擬實驗而言，以施加約5G之加速度的方式使光罩平台震動經過10分鐘，即使防塵薄膜組件框架僅利用矽酮黏接劑而固定在光罩平台上，仍未觀察到防塵薄膜組件框架從初始位置發生位移。Then, as a simulation experiment of the high-speed scanning motion accepted by the reticle unit in the actual production line, the reticle stage was shaken for 10 minutes by applying an acceleration of about 5 G, even if the pellicle frame was only bonded with fluorene. The agent was fixed on the reticle stage, and no displacement of the pellicle frame from the initial position was observed.
並且，使用波長13.5nm之EUV光間斷地對光罩單元進行總計3分鐘之照射，並測量經EUV光照射後的光罩之反射率。如此測定之光罩之反射率，與用EUV光照射前之反射率相比較，發現反射率下降了約0.5%。推測此反射率下降之原因為，在光罩基板上固定防塵薄膜組件框架時，從所使用之矽酮黏接劑中產生了外部氣體。Further, the mask unit was intermittently irradiated with EUV light having a wavelength of 13.5 nm for a total of 3 minutes, and the reflectance of the mask after the EUV light irradiation was measured. The reflectance of the mask thus measured was found to be reduced by about 0.5% in comparison with the reflectance before irradiation with EUV light. It is presumed that the decrease in the reflectance is caused by the generation of external air from the fluorene ketone adhesive used when the pellicle frame is fixed to the reticle substrate.
本發明，並不限定於以上實施形態或實施例，可以在申請專利範圍所記載之發明之範圍內進行種種變更，亦當然包含在本發明之範圍之內。The present invention is not limited to the above embodiments or examples, and various modifications can be made without departing from the scope of the invention as set forth in the appended claims.
例如，在圖3及圖4所示之實施形態中，防塵薄膜組件框架7係利用靜電吸盤而固定於光罩平台3上，在圖5及圖6所顯示之實施形態中，防塵薄膜組件框架7係利用機械式釦釘9而固定在光罩平台3上，但防塵薄膜組件框架7不一定要用靜電吸盤或機械式釦釘9固定在光罩平台3上，也可以將防塵薄膜組件框架7利用矽酮黏接劑等有機黏接劑而固定在光罩平台3上。防塵薄膜組件框架7係利用矽酮黏接劑等有機黏接劑而固定在光罩平台3上之情況下，因防塵薄膜組件框架7係利用光罩2之外側來固定在光罩平台3上，所以在保持曝光室內真空的狀態下使用EUV光對半導體晶圓或液晶用原版(未圖示)之感光膜進行曝光時，能將產生釋出氣體之惡劣影響控制在最小限度。For example, in the embodiment shown in FIGS. 3 and 4, the pellicle frame 7 is fixed to the reticle stage 3 by means of an electrostatic chuck. In the embodiment shown in FIGS. 5 and 6, the pellicle frame is The 7-series is fixed to the reticle stage 3 by means of mechanical fasteners 9, but the pellicle frame 7 does not have to be fixed to the reticle stage 3 by electrostatic chucks or mechanical fasteners 9, and the pellicle frame can also be attached. 7 is fixed on the mask platform 3 by using an organic binder such as an anthrone adhesive. The pellicle frame 7 is fixed to the reticle stage 3 by an organic bonding agent such as an ketone adhesive, and the pellicle frame 7 is fixed to the reticle stage 3 by the outer side of the reticle 2. Therefore, when the photosensitive film of the semiconductor wafer or the liquid crystal original plate (not shown) is exposed using EUV light while maintaining the vacuum in the exposure chamber, the adverse effect of the generated gas can be minimized.
另外，在圖5及圖6所顯示之實施形態中，防塵薄膜組件框架7係利用機械式釦釘9而固定於光罩平台3上，但在利用機械式手段而將防塵薄膜組件框架7固定在光罩平台3上之情況下，不一定要利用機械式釦釘9將防塵薄膜組件框架7固定在光罩平台3上，也可通過螺釘等其他機械方式而將防塵薄膜組件框架7固定在光罩平台3上。Further, in the embodiment shown in FIGS. 5 and 6, the pellicle frame 7 is fixed to the reticle stage 3 by the mechanical fastener 9, but the pellicle frame 7 is fixed by mechanical means. In the case of the reticle stage 3, it is not necessary to fix the pellicle frame 7 to the reticle stage 3 by means of mechanical clasps 9, and the pellicle frame 7 can be fixed by other mechanical means such as screws. Photomask platform 3.
並且，前述實施形態及前述實施例係使用鋁製之防塵薄膜組件框架7，但防塵薄膜組件框架7不一定要鋁製，也能使用以不銹鋼等其他金屬製成之防塵薄膜組件框架7，而且，防塵薄膜組件框架7不一定要金屬製，也能使用以聚乙烯等塑料製成之防塵薄膜組件框架7。Further, in the above-described embodiment and the above-described embodiment, the pellicle frame 7 made of aluminum is used, but the pellicle frame 7 is not necessarily made of aluminum, and the pellicle frame 7 made of other metals such as stainless steel can be used, and The pellicle frame 7 is not necessarily made of metal, and a pellicle frame 7 made of plastic such as polyethylene can also be used.
另外，在前述實施例中，光罩基板形成正方形形狀，防塵薄膜組件框架形成長方形形狀，但光罩基板不一定要形成正方形形狀，而且，防塵薄膜組件框架亦不一定要形成長方形形狀，可因應其目的而採用任意形狀之光罩基板及防塵薄膜組件框架。In addition, in the foregoing embodiment, the photomask substrate is formed in a square shape, and the pellicle frame is formed into a rectangular shape, but the photomask substrate does not have to form a square shape, and the pellicle frame does not have to be formed into a rectangular shape. A reticle substrate and a pellicle frame of any shape are used for the purpose.
1．．．光罩單元1. . . Photomask unit
2．．．光罩2. . . Mask
3．．．平台(光罩平台)3. . . Platform (mask platform)
5．．．防塵薄膜組件5. . . Dust-proof film assembly
6．．．防塵薄膜6. . . Dust film
7．．．防塵薄膜組件框架7. . . Dust-proof film assembly frame
9．．．機械式釦釘9. . . Mechanical buckle
圖1為具有光罩、與安裝於光罩之上之防塵薄膜組件之傳統光罩單元之簡略俯視圖。1 is a schematic plan view of a conventional reticle unit having a reticle and a pellicle assembly mounted on the reticle.
圖2為沿圖1所顯示之光罩單元之A-A線之簡略剖面圖。Figure 2 is a schematic cross-sectional view along line A-A of the reticle unit shown in Figure 1.
圖3為由光罩以及遮蓋光罩之防塵薄膜組件構成之本發明較佳實施形態之光罩單元之簡略透視俯視圖。Figure 3 is a schematic perspective plan view of a reticle unit of a preferred embodiment of the present invention constructed of a reticle and a pellicle assembly covering the reticle.
圖4為沿圖3所顯示之光罩單元之B-B線之簡略剖面圖。Figure 4 is a schematic cross-sectional view taken along line B-B of the reticle unit shown in Figure 3.
圖5為本發明之另一較佳實施形態，係由光罩以及遮蓋光罩之防塵薄膜組件構成之光罩單元之簡略透視俯視圖。Fig. 5 is a schematic perspective plan view showing a reticle unit comprising a photomask and a pellicle for covering the reticle according to another preferred embodiment of the present invention.
圖6為沿圖5所顯示之光罩單元之C-C線之簡略剖面圖。Figure 6 is a schematic cross-sectional view taken along line C-C of the reticle unit shown in Figure 5.
1．．．光罩單元1. . . Photomask unit
2．．．光罩2. . . Mask
3．．．平台(光罩平台)3. . . Platform (mask platform)
5．．．防塵薄膜組件5. . . Dust-proof film assembly
6．．．防塵薄膜6. . . Dust film
7．．．防塵薄膜組件框架7. . . Dust-proof film assembly frame
Claims (8)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010086368 | 2010-04-02 |
Publications (2)
| Publication Number | Publication Date |
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| TW201211675A TW201211675A (en) | 2012-03-16 |
| TWI431415B true TWI431415B (en) | 2014-03-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100111267A TWI431415B (en) | 2010-04-02 | 2011-03-31 | A photomask unit comprising a photomask and a pellicle attached to the photomask and a method for fabricating a photomask unit |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20130003036A1 (en) |
| EP (1) | EP2555052A4 (en) |
| JP (1) | JP5285185B2 (en) |
| KR (1) | KR20130024878A (en) |
| CN (1) | CN102822744B (en) |
| TW (1) | TWI431415B (en) |
| WO (1) | WO2011125407A1 (en) |
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| TWI745990B (en) * | 2015-04-07 | 2021-11-11 | 日商信越化學工業股份有限公司 | Pellicle, photomask with pellicle, exposure method, pattern manufacturing method, semiconductor device manufacturing method, and liquid crystal panel manufacturing method |
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| JP5609663B2 (en) * | 2011-01-18 | 2014-10-22 | 旭硝子株式会社 | Glass substrate holding means and EUV mask blank manufacturing method using the same |
| JP6084681B2 (en) * | 2013-03-15 | 2017-02-22 | 旭化成株式会社 | Pellicle membrane and pellicle |
| KR101707763B1 (en) * | 2013-05-24 | 2017-02-16 | 미쯔이가가꾸가부시끼가이샤 | Pellicle and euv exposure device comprising same |
| JP6025178B2 (en) * | 2013-11-11 | 2016-11-16 | 信越化学工業株式会社 | Pellicle pasting method and pasting apparatus used in this method |
| JP6308592B2 (en) * | 2014-04-02 | 2018-04-11 | 信越化学工業株式会社 | EUV pellicle |
| CN110934660B (en) * | 2015-03-24 | 2022-06-07 | 海克斯工健康公司 | Gender specific mesh implant with barrier for inguinal hernia repair |
| JP6341166B2 (en) * | 2015-09-03 | 2018-06-13 | 信越化学工業株式会社 | Photomask blank |
| KR102502727B1 (en) | 2015-11-09 | 2023-02-23 | 삼성전자주식회사 | reticle and exposure apparatus including the same |
| US10714371B2 (en) | 2017-11-16 | 2020-07-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for lithography in semiconductor fabrication |
| KR102374206B1 (en) | 2017-12-05 | 2022-03-14 | 삼성전자주식회사 | Method of fabricating semiconductor device |
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- 2011-03-10 KR KR1020127019475A patent/KR20130024878A/en not_active IP Right Cessation
- 2011-03-10 EP EP11765309.7A patent/EP2555052A4/en active Pending
- 2011-03-10 WO PCT/JP2011/055602 patent/WO2011125407A1/en active Application Filing
- 2011-03-10 JP JP2012509361A patent/JP5285185B2/en active Active
- 2011-03-10 CN CN201180017361.1A patent/CN102822744B/en active Active
- 2011-03-31 TW TW100111267A patent/TWI431415B/en active
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2012
- 2012-09-10 US US13/608,716 patent/US20130003036A1/en not_active Abandoned
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI745990B (en) * | 2015-04-07 | 2021-11-11 | 日商信越化學工業股份有限公司 | Pellicle, photomask with pellicle, exposure method, pattern manufacturing method, semiconductor device manufacturing method, and liquid crystal panel manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2011125407A1 (en) | 2013-07-08 |
| JP5285185B2 (en) | 2013-09-11 |
| TW201211675A (en) | 2012-03-16 |
| KR20130024878A (en) | 2013-03-08 |
| CN102822744B (en) | 2015-04-01 |
| WO2011125407A1 (en) | 2011-10-13 |
| US20130003036A1 (en) | 2013-01-03 |
| EP2555052A4 (en) | 2017-12-13 |
| CN102822744A (en) | 2012-12-12 |
| EP2555052A1 (en) | 2013-02-06 |
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