KR20150016056A - Reflective photomask blank, reflective photomask and integrated circuit device manufactured by using photomask - Google Patents

Abstract

The present invention aims to provide a reflective photomask blank which can be used for providing a photomask having a structure by which a life span of the photomask can be extended by minimizing damage on a film constituting the EUV photomask. The reflective photomask includes: a multi-reflection film; a capping layer which is formed on the multi-reflection film and includes transition metals; a passivation film which contacts at least a portion of the capping layer on a side opposite to the multi-reflection layer in the capping layer and includes transition metals and nitrogen atoms; and a light absorption pattern covering a portion of the capping layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflective photomask blank, a reflective photomask blank, a reflective photomask and an integrated circuit device manufactured using photomask,

Technical aspects of the present invention relate to a photomask required for a semiconductor device fabrication process, and more particularly to a photomask for use in an extreme ultraviolet (EUV) photolithography process using a reflective photomask blank, a reflective photomask and a reflective photomask To an integrated circuit device manufactured therefrom.

In recent years, as the design rule of a semiconductor device is sharply reduced, the wavelength of light used in the exposure process is also decreasing. Therefore, extreme ultraviolet (EUV) having a short wavelength is used for the exposure process. In recent years, research on a technique of transferring a pattern onto a wafer using a reflective exposure system including a reflective EUV photomask has been actively conducted.

Unlike the exposure process using the ArF wavelength or the KrF wavelength, the EUV photomask can use a pellicle to protect the photomask, since the wavelength used for EUV lithography is absorbed in all materials. And is highly susceptible to contamination by the process by-product carbon due to the high energy of EUV. Therefore, the EUV photomask needs a periodic cleaning operation, and a photomask having a structure capable of improving lifetime by maintaining a desired level of reflectance without being damaged even when exposed to a repeated exposure process and a cleaning process It is necessary to develop.

It is an object of the present invention to provide a photomask capable of providing a photomask with a structure capable of minimizing damage of a film constituting an EUV photomask and improving lifetime even during repeated cleaning, Thereby providing a mask blank.

Another technical object of the present invention is to provide a reflection type photomask having a structure capable of maintaining a desired level of reflectance and providing an improved lifetime without being damaged even when exposed to repeated exposure and cleaning processes .

Another aspect of the present invention is to provide an integrated circuit device fabricated using a photomask having a structure capable of providing a lifetime.

According to an aspect of the present invention, there is provided a reflective type photomask blank comprising: a multilayer reflective film formed on a photomask substrate; a capping layer formed on the multilayer reflective film and including a transition metal; A passivation film which is in contact with at least a part of the capping layer on the opposite side of the multiple reflection film and includes a transition metal and nitrogen atoms; and a light absorption layer formed on the capping layer.

In some embodiments, the capping layer may comprise Ru.

In some embodiments, at least a portion of the passivation film may be comprised of a metal nitride comprising Ru and N. In some other embodiments, at least a portion of the passivation film may comprise a metal oxynitride including Ru, O, and N.

In some embodiments, the passivation film may have a nitrogen concentration distribution in which the content of nitrogen atoms gradually decreases as the capping layer approaches the capping layer along the thickness direction of the passivation film from the opposite surface of the capping layer.

In some embodiments, the passivation film may be interposed between the capping layer and the light absorbing layer.

According to an aspect of the present invention, there is provided a reflection type photomask including: a multiple reflection film formed on a photomask substrate; a capping layer formed on the multiple reflection film and including a transition metal; A passivation film which is in contact with at least a part of the capping layer on the opposite side of the multiple reflection film and includes a transition metal and nitrogen atoms, and a light absorption pattern covering a part of the capping layer.

In some embodiments, the passivation film may include a portion interposed between the capping layer and the light absorption pattern.

In some embodiments, the passivation film includes a first portion that is exposed to the outside, and a second portion that is interposed between the capping layer and the light absorption pattern, wherein the first portion and the second portion are And may be in contact with the capping layer.

In some embodiments, the passivation film may include a first portion in contact with the capping layer and a second portion overlying the light-absorbing pattern in a spaced-apart position from the capping layer.

In some other embodiments, the first portion and the second portion of the passivation film may each be exposed to the outside.

In some other embodiments, the passivation film includes a first portion in contact with the capping layer and a second portion overlying the light absorption pattern in a spaced-apart position from the capping layer, wherein the first portion and the second portion May be made of different components.

In some further embodiments, the passivation film comprises a first portion in contact with the capping layer and a second portion overlying the light absorption pattern in a spaced-apart position from the capping layer, wherein the first portion and the second portion The parts may be made of the same components.

In some embodiments, the buffer layer may further include a buffer pattern interposed between the capping layer and the light absorption pattern, the buffer pattern being made of a different component from the capping layer and the passivation film.

The integrated circuit device according to one aspect of the technical idea of the present invention can be manufactured using the photomask according to the technical idea of the present invention as described above.

The reflection type photomask blank and the reflection type photomask according to the technical idea of the present invention include a passivation film covering the capping layer so that the durability against the repetitive cleaning process of the photomask can be improved and oxygen penetrates into the capping layer , It is possible to prevent oxygen from penetrating into the interface between the capping layer and the multiple reflective film to prevent an undesired oxide film from being formed and improve the lifetime of the photomask.

1 is a cross-sectional view of a reflective photomask blank according to embodiments of the present invention.
2A and 2B are graphs illustrating various nitrogen concentration distributions in a thickness direction of a passivation film included in a reflective photomask blank according to embodiments of the present invention.
3 is a flowchart illustrating an exemplary method of manufacturing a photomask blank according to some embodiments of the technical concept of the present invention.
4 is a flowchart for explaining an exemplary manufacturing method of a photomask blank according to some other embodiments according to the technical idea of the present invention.
5 is a flowchart for explaining an exemplary method of manufacturing a photomask blank according to still another embodiment according to the technical idea of the present invention.
6A to 6F are cross-sectional views illustrating a method of manufacturing a reflective type photomask according to embodiments of the present invention.
FIGS. 7A to 7E are cross-sectional views illustrating a method of manufacturing a reflective type photomask according to embodiments of the present invention.
8A is a graph showing X-ray photoelectron spectroscopy (XPS) analysis results of a reflection type photomask obtained by a method according to embodiments of the present invention.
8B to 8D are graphs showing the results of XPS analysis in the capping layer exposed to the outside when a reflection type photomask is manufactured by omitting the step of forming a passivation film.
FIG. 9 is a graph showing the results of XPS analysis on the exposed surface and the bulk portion of the passivation film with respect to the reflection type photomask obtained by the method according to the technical idea of the present invention, in comparison with the control example.
FIG. 10 is a flowchart illustrating a method of manufacturing an integrated circuit device according to embodiments of the present invention. Referring to FIG.
11 is a block diagram of a memory card including integrated circuit elements fabricated using a reflective photomask according to embodiments of the present invention.
12 is a block diagram of a memory system employing a memory card including integrated circuit elements fabricated using a reflective photomask according to embodiments of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The same reference numerals are used for the same constituent elements in the drawings, and a duplicate description thereof will be omitted.

Embodiments of the present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. These embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The present invention is not limited to the following embodiments. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

Although the terms first, second, etc. are used herein to describe various elements, regions, layers, regions and / or elements, these elements, components, regions, layers, regions and / It should not be limited by. These terms do not imply any particular order, top, bottom, or top row, and are used only to distinguish one member, region, region, or element from another member, region, region, or element. Thus, a first member, region, region, or element described below may refer to a second member, region, region, or element without departing from the teachings of the present invention. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

Unless otherwise defined, all terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the inventive concept belongs, including technical terms and scientific terms. In addition, commonly used, predefined terms are to be interpreted as having a meaning consistent with what they mean in the context of the relevant art, and unless otherwise expressly defined, have an overly formal meaning It will be understood that it will not be interpreted.

If certain embodiments are otherwise feasible, the particular process sequence may be performed differently from the sequence described. For example, two processes that are described in succession may be performed substantially concurrently, or may be performed in the reverse order to that described.

In the accompanying drawings, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, embodiments of the present invention should not be construed as limited to any particular shape of the regions shown herein, but should include variations in shape resulting from, for example, manufacturing processes.

1 is a cross-sectional view of a reflective photomask blank 100 according to embodiments of the present invention.

Referring to FIG. 1, the reflective photomask blank 100 includes a multiple reflective layer 120 formed on a photomask substrate 110, a capping layer 130 formed on the multiple reflective layer 120, A passivation layer 140 that is in contact with at least a portion of the capping layer 130 on the opposite side of the multiple reflective layer 120; a buffer layer 150 formed on the passivation layer 140; And an absorber layer 170 formed on the substrate 110.

In some embodiments, the capping layer 130 comprises a transition metal, and the passivation film 140 may comprise a transition metal and a nitrogen atom. In some other embodiments, the capping layer 130 includes a transition metal, and the passivation film 140 may include a transition metal, a nitrogen atom, and an oxygen atom. For example, the capping layer 130 may be formed of a metal layer made of a single transition metal, and the passivation layer 140 may include a nitride of the transition metal, a nitride of the transition metal, Gt; metal oxynitride < / RTI >

The passivation layer 140 may prevent or delay the oxidation of the capping layer 130 due to the external environment. In some other embodiments, the passivation layer 140 may prevent or mitigate penetration of oxygen between the multiple reflective layer 120 and the capping layer 130.

The photomask substrate 110 may be made of dielectric, glass, semiconductor, or metal. In some embodiments, the photomask substrate 110 may be made of a material having a low thermal expansion coefficient. For example, the photomask substrate 110 may have a thermal expansion coefficient of about 0 占 0.05 占 10 ^-7 / 占 폚 at 20 占 폚. In addition, the photomask substrate 110 may be made of a material having excellent smoothness, flatness, and resistance to a cleaning liquid. For example, the photomask substrate 110 may be made of a low thermal expansion material (LTEM) glass such as synthetic quartz glass, quartz glass, aluminosilicate glass, soda lime glass, SiO ₂ -TiO ₂ glass, Deposited crystallized glass, single crystal silicon, or SiC.

In some embodiments, the frontside surface 110F of the photomask substrate 110 has a flatness of about 50 nm or less and a backside surface 110B of the photomask substrate 110 ) May have a flatness of about 500 nm or less. In addition, the front surface 110F and the back surface 110B of the photomask substrate 110 may have a surface roughness of about 0.15 nm or less.

A capping layer 130, a passivation film 140, a buffer layer 150, a light absorption layer 170, and a low reflection layer 172 are formed on the front surface 110F of the photomask substrate 110 May be formed in order. In some embodiments, at least one of the buffer layer 150 and the low reflective layer 172 may be omitted. A backside conductive film 180 is formed on the back side surface 110B of the photomask substrate 110. [

The multiple reflection film 120 has a multilayer mirror structure in which a high refractive index layer 120H and a low refractive index layer 120L are alternately stacked a plurality of times. For example, the multiple reflection film 120 may have a structure in which the high refractive index layer 120H and the low refractive index layer 120L are repeatedly formed for about 20 to 60 cycles. The uppermost layer of the multiple reflection film 120 may be a high refractive index layer 120H.

In some embodiments, the multiple reflective film 120 may be a Mo / Si periodic multilayer film, an Mo compound / Si compound periodic multilayer film, a Ru / Si periodic multilayer film, a Be / Mo periodic multilayer film, a Si / Nb periodic multilayer film, Si / Mo / Ru periodic multi-film, Si / Mo / Ru / Mo periodic multi-film, or Si / Ru / Mo / Ru periodic multi-film.

The material of the multiple reflection film 120 and the film thickness of each layer can be appropriately selected according to the wavelength band of the applied EUV light or the reflectance of the EUV light required in the multiple reflection film 120. For example, when the multiple reflection film 120 is made of a Mo / Si periodic multi-film, it corresponds to the Mo layer and the high-refractive index layer 120H corresponding to the low-refractive index layer 120L included in the multiple reflection film 120 May be formed to have a thickness selected within a range of about 2 to 5 nm, respectively.

The multiple reflective layer 120 may be formed using DC sputtering, RF sputtering, ion beam sputtering, or the like. For example, in the case of forming the Mo / Si multiple reflection film by using the ion beam sputtering method, a Si target is used as a target, an Si film is deposited using Ar gas as a sputter gas, and a Mo target is used as a target And the Mo film is deposited by using Ar gas as the sputter gas. Thus, about 40 to 50 cycles of the Si film and the Mo film can be formed.

The capping layer 130 protects the multiple reflective layer 120 from being damaged during an etching process or a defect repair process for manufacturing a photomask by patterning the photomask blank 100, 120 can be prevented from being oxidized.

The capping layer 130 may include at least one transition metal selected from Ru, Ni, and Ir.

The capping layer 130 may have a thickness of about 1 to 6 nm. In some embodiments, the thickness of the capping layer 130 may be greater than the thickness of the high refractive index layer 120H that constitutes the uppermost layer of the multiple reflective layer 120. For example, the high refractive index layer 120H constituting the uppermost layer of the multiple reflective layer 120 has a thickness of about 1.5 to 2.5 nm, and the capping layer 130 has a thickness of about 3 to 6 nm .

In the reflective type photomask blank 100 illustrated in FIG. 1, the passivation film 140 is interposed between the capping layer 130 and the buffer layer 150. If the buffer layer 150 is omitted, the passivation layer 140 may be in contact with the capping layer 130 and the light absorption layer 170, respectively.

The passivation layer 140 may include a nitride of the same kind of transition metal as the transition metal included in the capping layer 130, or an oxynitride of the transition metal.

In some embodiments, the capping layer 130 is comprised of a ruthenium (Ru) film, and at least a portion of the passivation film 140 may be comprised of ruthenium nitride (RuN) comprising Ru and N. In some other embodiments, the capping layer 130 is comprised of a ruthenium (Ru) film, and at least a portion of the passivation film 140 may comprise ruthenium oxynitride (RuON), including Ru, O, have.

In some embodiments, the passivation film 140 may be formed to have a smaller thickness than the capping layer 130. For example, the passivation film 140 may be formed to have a thickness of about 2.5 nm or less. In some embodiments, at least a portion of the passivation film 140 may consist of a single atomic layer of its constituent elements.

2A and 2B are graphs illustrating various nitrogen concentration distributions in the thickness direction of the passivation film 140 illustrated in FIG. 2A and 2B, a portion of the capping layer 130 and a portion of the passivation film 140 are shown together for clarity.

2A, the passivation film 140 is formed so as to extend in a thickness direction of the passivation film 140 from the surface of the passivation film 140 opposite to the surface that is in contact with the capping layer 130 Accordingly, the nitrogen concentration distribution may be such that the content of nitrogen atoms gradually decreases toward the capping layer 130.

2B, the passivation film 140 may have a uniform nitrogen concentration distribution over the entire thickness direction of the passivation film 140. In other embodiments, the passivation film 140 may have a uniform nitrogen concentration distribution over the entire thickness direction of the passivation film 140, as illustrated in FIG.

Referring to FIG. 1 again, the capping layer 130 is covered with the passivation film 140, so that the photomask blank 100 is formed during the process of forming the photomask blank 100, The capping layer 130 may be damaged or contaminated during the etching of a part of the capping layer 130 or the oxygen is penetrated into the capping layer 130 or the interface between the capping layer 130 and the multi- It is possible to prevent the undesired oxide film from growing and deteriorating or damaging the underlying multiple reflection film 120. In addition, the durability against the repeated cleaning process required in the subsequent process is also improved, so that even when the cleaning process which is likely to damage the exposed surface is repeatedly performed, such as the accelerated cleaning process using UV, the capping layer 130 It is possible to prevent problems such as deterioration of the reflectivity characteristics of the multiple reflective film 120 due to the protection of the passivation film 140 and improve the lifetime of the photomask.

The buffer layer 150 may protect the capping layer 130 from being damaged during the dry etching of the light absorbing layer 170 to form a reflective photomask from the photomask blank 100. The buffer layer 150 protects the passivation film 140 and the capping layer 130 when a defect occurs in the case where a black defect or a white defect occurs in the pattern region during the manufacturing process of the photomask, 120 can be prevented from being damaged.

The buffer layer 150 may be made of a material having a very low absorption rate of EUV light. In some embodiments, the buffer layer 150 is Ru, RuB, RuSi, Cr, Cr nitride, Al, Al nitride, Ta, Ta nitride, Pt, Ir, Pd, SiO _2, Si ₃ N _4, Al ₂ O ₃ , or a combination thereof. In some embodiments, the buffer layer 150 may be made of a material having different etching characteristics from the passivation layer 140 and the capping layer 130.

The buffer layer 150 may be formed by a sputtering process. For example, when a Ru film is formed as the buffer layer 150, the buffer layer 162 can be formed by performing a magnetron sputtering process using a Ru target as a target and an Ar gas as a sputter gas. In some embodiments, the buffer layer 150 may have a thickness of about 1 to 100 nm.

When a part of the light absorption layer 170 is etched to form a reflection type photomask from the photomask blank 100, the buffer layer 150 exposed as a result of the etching of the light absorption layer 170 is also etched and removed .

1, the passivation film 140 and the light absorbing layer 170 are spaced apart from each other with the buffer layer 140 therebetween. However, the technical idea of the present invention is not limited thereto. For example, the buffer layer 150 may be omitted. In this case, the light absorption layer 170 may be formed directly on the passivation layer 140 so as to directly contact the passivation layer 140.

The light absorption layer 170 may be made of a material having a very low reflectance of EUV light while absorbing EUV light. In addition, the light absorption layer 170 may be formed of a material having excellent chemical resistance. In some embodiments, the light absorbing layer 170 may be made of a material having a maximum light reflectance of about 5% or less near a wavelength of 13.5 nm when irradiating the surface of the light absorbing layer 170 with a light ray in a wavelength range of EUV light have.

The light absorption layer 170 may be made of a material containing Ta as a main component. In some embodiments, the light absorbing layer 170 may include a Ta-based component and at least one element selected from Hf, Si, Zr, Ge, B, N, For example, the light absorption layer 170 may be made of TaO, TaN, TaHf, TaHfN, TaBSi, TaBSiN, TaB, TaBN, TaSi, TaSiN, TaGeN, TaZr, TaZrN, or a combination thereof. In some embodiments, the light absorbing layer 170 may be made of a material having a Ta content of at least 40 atomic percent. In some embodiments, the light absorbing layer 170 may contain about 0 to 25 atomic percent oxygen (O).

In some embodiments, a sputtering process may be used to form the light absorbing layer 170, but is not limited thereto. In some embodiments, the light absorbing layer 170 may have a thickness of about 30 to 200 nm.

The low reflection layer 172 may serve to obtain a sufficient contrast by providing a relatively low reflectance in a wavelength band of inspection light, for example, a wavelength band of about 190 to 260 nm, during inspection of the photomask. For example, the low reflection layer 172 may be made of TaBO, TaBNO, TaOH, TaON, or TaONH. The low reflection layer 172 may be formed by a sputtering process, but is not limited thereto.

In some embodiments, the low reflective layer 172 may have a thickness of about 5 to 25 nm.

A mask layer 190 may be formed on the low reflective layer 172. The mask layer 190 may comprise a hard mask layer, an electron beam resist layer, or a combination thereof. An etching mask pattern for forming an optical pattern on the light absorption layer 170 may be formed on the mask layer 190 through an electron beam lithography and a development process.

The backside conductive film 180 formed on the back side surface 110B of the photomask substrate 110 may be formed using an electrostatic chuck 110 to prevent the photomask substrate 110 from being warped during the exposure process It can be advantageously used for supporting.

In some embodiments, the backside conductive film 180 may be comprised of Cr or CrN. The backside conductive layer 180 may have a thickness of about 20 to 80 nm.

3 is a flowchart illustrating an exemplary method of manufacturing a photomask blank according to some embodiments of the technical concept of the present invention. In this example, a method of manufacturing the reflective type photomask blank 100 illustrated in FIG. 1 will be described as an example.

Referring to FIGS. 1 and 3, in step P212, a multiple reflective film 120 is formed on a photomask substrate 110. FIG.

The back side surface 110B of the photomask substrate 110 may be covered with a backside conductive film 180. [ In some embodiments, a sputter deposition device may be used to form the multiple reflective film 120.

In Step P214, a preliminary capping layer is formed on the multiple reflective film 120. [ The preliminary capping layer may be formed using a sputtering deposition apparatus used to form the multiple reflective film 120 in process P212. In some embodiments, the process of forming the multiple reflective layer 120 and the process of forming the preliminary capping layer in-situ may be performed in the sputtering deposition apparatus.

In some embodiments, the preliminary capping layer may comprise a thin film comprising at least one transition metal selected from Ru, Ni and Ir.

The preliminary capping layer may be formed to have a greater thickness than the capping layer 130 described with reference to FIG.

In step P216, the exposed surface of the preliminary capping layer formed in step P214 is plasma-treated to change the preliminary capping layer by a certain thickness from its exposed surface in a gas atmosphere containing nitrogen to form a capping layer 130).

In some embodiments, to form the passivation film 140, a nitration treatment may be performed on the exposed surface of the spare capping layer. As a result, a part of the preliminary capping layer is nitrided by a certain thickness from the exposed surface of the preliminary capping layer, and a part of the preliminary capping layer becomes a passivation film 140 made of a metal nitride, . ≪ / RTI >

For the nitriding treatment, the preliminary capping layer may be subjected to a plasma treatment under a gas atmosphere containing nitrogen. In some embodiments, the gas atmosphere containing the nitrogen-nitrogen (N ₂₎ gas, nitrogen monoxide (NO) gas, dinitrogen monoxide (N ₂ O) gas, dioxide, nitrogen (NO ₂₎ gas, ammonia (NH ₃ ) Gas and the like. These gases may be used alone or in combination with each other.

At this time, a plasma processing apparatus used for carrying out various processes such as etching, ashing, film formation, and the like on a semiconductor wafer to be processed in the semiconductor device manufacturing process for the plasma processing, A plasma processing apparatus capable of performing plasma processing on a semiconductor wafer can be used.

A photomask substrate on which the preliminary capping layer is formed is loaded in a reaction chamber of the plasma processing apparatus and a gas containing nitrogen is supplied into the reaction chamber, For example, a high frequency power of about 400 to 600 W can be applied. The thickness and the density of the passivation film 140 can be controlled by controlling the flow rate of the gas including nitrogen supplied into the reaction chamber and the plasma treatment time.

In some embodiments, the temperature in the reaction chamber during formation of the passivation film 140 may be maintained at about 80-120 캜, for example about 100 캜. In some embodiments, the plasma treatment may be performed for about 60 to 180 seconds to form the passivation film 140. The longer the plasma treatment time, the greater the thickness and density of the passivation film 140 may be.

In some embodiments, when the N ₂ gas is used as the nitrogen-containing gas during formation of the passivation film 140, the passivation film 140 may be formed of a metal nitride including N . For example, when the preliminary capping layer is made of Ru, the passivation film 140 may be made of RuN.

N ₂ molecules are easily decomposed into active nitrogen radicals when the plasma is applied, and as a result, they can react well with the Ru film in the Ru film. Therefore, a RuN thin film growing into the Ru film from the Ru film surface can be formed. The passivation film 140 made of the RuN thin film thus obtained can have excellent resistance to oxidation.

In some other embodiments, when NO ₂ gas is used as the nitrogen-containing gas during formation of the passivation film 140, the passivation film 140 made of a metal oxynitride containing O and N .

The passivation film 140 obtained by the above-described method can not only delay the extent to which the capping layer 130 is oxidized under the influence of the external environment, but also can be used in an environment exposed to the external environment, for example, It is possible to suppress the phenomenon that the active oxygen radicals constituting the capping layer 130 penetrate into the lower film quality of the capping layer 130, for example, the multiple reflection film 120 to degrade the function of the photomask.

A buffer layer 150, a light absorption layer 170, a low reflection layer 172, and a mask layer 190 are formed in this order on the passivation film 140 in accordance with the processes P218 to P224.

4 is a flowchart for explaining an exemplary manufacturing method of a photomask blank according to some other embodiments according to the technical idea of the present invention. In this example, a method of manufacturing the reflective type photomask blank 100 illustrated in FIG. 1 will be described as an example. 4 is generally the same as the manufacturing method described with reference to FIG. 3, except that the process P316 of FIG. 4 is used instead of the process P216 of FIG. 3 to form the capping layer 130 and the passivation film 140 in the flow chart of FIG. Do.

Referring to FIGS. 1 and 4, in step P316, the exposed surface of the spare capping layer formed in the process P214 is subjected to heat treatment under a gas atmosphere containing nitrogen to change the spare capping layer from its exposed surface by a certain thickness, A film 140 is formed.

In some embodiments, to form the passivation film 140, a nitration treatment may be performed on the exposed surface of the spare capping layer. As a result, a part of the preliminary capping layer is nitrided by a certain thickness from the exposed surface of the preliminary capping layer, and a part of the preliminary capping layer becomes a passivation film 140 made of a metal nitride, . ≪ / RTI >

For the nitriding treatment, the preliminary capping layer may be subjected to a heat treatment in a gas atmosphere containing nitrogen. In some embodiments, the gas atmosphere containing the nitrogen-nitrogen (N ₂₎ gas, nitrogen monoxide (NO) gas, dinitrogen monoxide (N ₂ O) gas, dioxide, nitrogen (NO ₂₎ gas, ammonia (NH ₃ ) Gas and the like. These gases may be used alone or in combination with each other.

In some embodiments, electromagnetic waves may be used for the heat treatment. The electromagnetic wave may have a wavelength of about 0.6 탆 to 1 mm. For example, the electromagnetic wave may have a wavelength of about 100 to 1000 nm. The electromagnetic wave may be supplied from an infrared lamp, a solid-state laser, a Ni-Cr hot wire, a ceramic heater, or a quartz heater. For example, as the electromagnetic wave generating device, a Xe lamp, a Xe-Hg lamp, a ceramic heater, a quartz heater, a diode laser light having an oscillation wavelength of 808 nm, a transparent quartz infrared heater lamp, Combinations can be used.

When the heat wavelength from the electromagnetic wave is supplied to a gas atmosphere containing nitrogen, the N ₂ molecules in the gas atmosphere can easily decompose and react with the Ru film constituting the preliminary capping layer. Therefore, a RuN thin film growing into the Ru film from the Ru film surface can be formed. The passivation film 140 made of the RuN thin film thus obtained can have excellent resistance to oxidation.

The thickness and density of the passivation layer 140 can be controlled by adjusting the flow rate of the nitrogen-containing gas and the heat treatment time.

In some embodiments, the temperature in the thermal processing chamber during formation of the passivation film 140 may be maintained at about 80-120 캜, such as about 100 캜. In some embodiments, the heat treatment may be performed for about 60 seconds to 10 minutes to form the passivation film 140. [ As the heat treatment time becomes longer, the thickness and the density of the passivation film 140 can be increased.

A buffer layer 150, a light absorption layer 170, a low reflection layer 172, and a mask layer 190 are formed in this order on the passivation film 140 in accordance with the processes P218 to P224.

5 is a flowchart for explaining an exemplary method of manufacturing a photomask blank according to still another embodiment according to the technical idea of the present invention. In this example, a method of manufacturing the reflective type photomask blank 100 illustrated in FIG. 1 will be described as an example. 3, except that the processes P324 and P326 of FIG. 5 are used instead of the processes P214 and P216 of FIG. 3 to form the capping layer 130 and the passivation film 140 in the flow chart of FIG. Is substantially the same as the described manufacturing method.

Referring to FIGS. 1 and 5, in step P324, a capping layer 130 is formed on the multiple reflection film 120. FIG. The formation of the capping layer 130 may be performed in a similar manner to the capping layer forming process in the process P124 of FIG.

The capping layer 130 will be described in more detail with reference to FIG.

In step P326, a passivation film 140 is formed on the capping layer 130 using a deposition process.

As a deposition process for forming the passivation film 140, a CVD (chemical vapor deposition), an atomic layer deposition (ALD), a physical vapor deposition (PVD), a plasma enhanced CVD (PECVD) P-CVD (pulsed CVD), or a combination thereof.

In some embodiments, in order to form a passivation film 140 comprising a metal nitride film including Ru and N using a CVD or ALD process, the capping layer 130 is exposed to the photomask substrate 110 ). ≪ / RTI > The deposition gas includes a Ru precursor and a nitrogen source. A carrier gas (for example, an inert gas), a reducing gas, or a combination thereof may be supplied together with the deposition gas.

Exemplary Ru precursor is _{Ru 3 (CO) 12, Ru} (DMPD) (EtCp) ((2,4-dimethylpentadienyl) (ethylcyclopentadienyl) ruthenium), Ru (DMPD) 2 (bis (2,4-dimethylpentadienyl) ruthenium), But are not limited to, Ru (DMPD) (MeCp) (4-dimethylpentadienyl) ruthenium, and Ru (EtCp) ₂ ) bis (ethylcyclopentadienyl) ruthenium.

The nitrogen source is nitrogen (N ₂₎ gas, nitrogen monoxide (NO) gas, dinitrogen monoxide (N ₂ O) gas, nitrogen dioxide days (NO ₂₎ gas, ammonia (NH ₃₎ gas, N- containing radical (e. , N ^* , NH ^* , NH ₂ ^* ), amines, and combinations thereof, but is not limited thereto.

In some embodiments, if N ₂ is used as the nitrogen source, a passivation film 140 of ruthenium nitride may be obtained. In some other embodiments, when NO ₂ is used as the nitrogen source, a passivation film 140 of ruthenium oxynitride may be obtained.

A buffer layer 150, a light absorption layer 170, a low reflection layer 172, and a mask layer 190 are formed in this order on the passivation film 140 in accordance with the processes P218 to P224.

6A to 6F are cross-sectional views illustrating a method of manufacturing a reflective type photomask according to embodiments of the present invention. 6A to 6F, a process of manufacturing a reflection type photomask 600 (see FIGS. 6E and 6F) using the reflection type photomask blank 100 illustrated in FIG. 1 will be described as an example. 6A to 6F, the same reference numerals as in FIG. 1 denote the same members, and a detailed description thereof will be omitted here. In this example, the case where the mask layer 190 formed in the reflective type photomask blank 100 illustrated in FIG. 1 is formed of a hard mask layer will be described.

Referring to FIG. 6A, a resist film 610 for electron beam lithography is formed on the mask layer 190 using a spin coating process.

In some embodiments, the resist film 610 may comprise a chemically amplified resist. In some embodiments, the resist film 610 may be formed to a thickness of about 50 to 100 nm.

Referring to FIG. 6B, the resist film 610 is subjected to exposure and development processes to form a resist pattern 610P defining a shape corresponding to a pattern to be transferred to the wafer.

Referring to FIG. 6C, the mask layer 190 is etched using the resist pattern 610P as an etching mask to form a mask pattern 190P.

6D, after the resist pattern 610P is removed, the low reflective layer 172, the light absorbing layer 170, and the buffer layer 150 are sequentially etched using the mask pattern 190P as an etching mask, A pattern 172P, a light absorption pattern 170P, and a buffer pattern 150P are formed.

A chlorine-based gas, or a mixed gas of a chlorine-based gas and an oxygen gas may be used as the etching gas while the low-reflection pattern 172P, the light absorption pattern 170P, and the buffer pattern 150P are etched.

After the light absorption pattern 170P and the buffer pattern 150P are formed, the multiple reflection layer 120 is covered with the capping layer 130 and is not exposed to the outside. Since the capping layer 130 is covered with the passivation film 140, when the resultant formed with the light absorption pattern 170P and the buffer pattern 150P is exposed to an oxygen-containing atmosphere, for example, an etching atmosphere or the atmosphere It is possible to prevent the penetration of oxygen through the fragile portion of the capping layer 130 or the penetration of oxygen at the interface between the capping layer 130 and the multiple reflection film 120 to prevent an undesired oxidation reaction. An undesired oxide layer may be formed on the interface between the capping layer 130 and the multiple reflective layer 120 or the capping layer 130 may be separated from the multiple reflective layer 120 Problems and the like can be prevented. Also, the durability to the repeated cleaning process required in the subsequent process can be improved.

Referring to FIG. 6E, the mask pattern 190P (see FIG. 6D) is removed to form a reflective photomask 600. FIG.

In some embodiments, a dry etch process may be used to remove the mask pattern 190P, but is not limited thereto.

In the reflection type photomask 600, the passivation film 140 includes a first portion 140A that is exposed to the outside and a second portion 140B that is interposed between the capping layer 130 and the light absorption pattern 170P. 2 portion 140B. The first portion 140A and the second portion 140B of the passivation film 140 are in contact with the capping layer 130, respectively.

Referring to FIG. 6F, in order to remove organic residues or particles that may remain on the resultant of removing the mask pattern 190P as described with reference to FIG. 6E, the reflection type photomask 600 is cleaned in a cleaning atmosphere (630).

The cleaning atmosphere 630 may include, but is not limited to, a UV cleaning, a cleaning solution containing deionized water, a sulfuric acid-peroxide mixture (SPM), or a combination thereof.

In some embodiments, the UV irradiation can be done using a UV lamp in the cleaning chamber. For example, ultraviolet light having a wavelength of about 172 nm can be irradiated for about 1 to 20 minutes using a UV lamp in the cleaning chamber. A method of generating ozone by providing oxygen and nitrogen in the cleaning chamber and generating an OH group from ozone to oxidize the residue to remove the residue can be used. The organic residues can be oxidatively decomposed and removed by UV irradiation.

When the cleaning liquid containing the deionized water is used, the cleaning liquid may be sprayed onto the reflection type photomask 600 to remove particles remaining on the surface of the reflection type photomask 600 by a physical force. At this time, ultrasonic waves can be applied to the reflection type photomask 600 while supplying deionized water to the reflection type photomask 600.

The reflection film 120 is protected by the capping layer 130 and the capping layer 130 is covered by the passivation film 140. In the reflection type photomask 600 according to the technical idea of the present invention, Therefore, the cleaning process in which the reflection type photomask 600 is exposed to the cleaning atmosphere 630 consisting of UV irradiation, cleaning solution, or a combination thereof a plurality of times and the exposure surface of the reflection type photomask 600 is likely to be damaged, The capping layer 130 is protected by the passivation film 140 to prevent oxygen from penetrating through the capping layer 130 or peeling off the capping layer 130 . Accordingly, it is possible to prevent a problem such as deterioration of the reflectivity characteristic of the multiple reflection film 120, and the lifetime of the reflection type photomask 600 can be improved.

FIGS. 7A to 7E are cross-sectional views illustrating a method of manufacturing a reflective type photomask according to embodiments of the present invention. 7A to 7E, the process of manufacturing the reflection type photomask 700 (see FIG. 7E) using the photomask blank 100A not including the passivation film 140 will be described as an example. 7A to 7E, the same reference numerals as in Figs. 1 and 6A to 6F denote the same members, and a detailed description thereof will be omitted here.

Referring to FIG. 7A, a reflection type photomask blank 100A having a structure similar to that of the reflection type photomask blank 100 described with reference to FIG. 1 is prepared.

The reflective photomask blank 100A has substantially the same structure as the reflective photomask blank 100 illustrated in FIG. 1 except that the passivation film 140 is omitted.

Referring to FIG. 7B, a resist film 610 for electron beam lithography is formed on the mask layer 190 by the method described with reference to FIGS. 6A and 6B, and then patterned to form a resist pattern 610P.

Referring to FIG. 7C, the mask layer 190 is etched using the resist pattern 610P (see FIG. 7B) as an etch mask in the manner described with reference to FIGS. 6C and 6D to form the mask pattern 190P The low reflection layer 172, the light absorption layer 170 and the buffer layer 150 are sequentially etched by using the mask pattern 190P as an etching mask to form the low reflection pattern 172P, the light absorption pattern 170P, Thereby forming a buffer pattern 150P.

Referring to FIG. 7D, the mask pattern 190P (see FIG. 7C) is removed to expose the upper surface of the low-reflection pattern 172P to the outside.

If the step of forming the low reflection pattern 172P is omitted, the upper surface of the light absorption pattern 170P may be exposed to the outside.

After the light absorption pattern 170P is formed, a part of the upper surface 130T of the capping layer 130 covering the multiple reflection film 120 is exposed to the outside through the light absorption pattern 170P.

Referring to FIG. 7E, a passivation film 740 is formed to cover at least a portion of the top surface 130T of the capping layer 130 exposed to the outside.

The passivation film 740 is formed on the exposed portion of each of the buffer pattern 150P, the light absorption pattern 170P and the low reflection pattern 172P as well as the exposed portion of the top surface 130T of the capping layer 130. [ As shown in FIG.

The details of the constituent material and the forming method of the passivation film 740 are substantially the same as those described for the passivation film 140 illustrated in FIG.

In some embodiments, the passivation film 740 may be formed in a similar manner as in process P216 of FIG. That is, in order to form the passivation film 740, the exposed surface of the capping layer 130 may be plasma-treated under a gas atmosphere containing nitrogen. As a result, the activated nitrogen radical penetrates a predetermined depth from the exposed surface of the capping layer 130 into the capping layer 130, so that the passivation film 740 can be formed. The passivation film 740 may have a nitrogen concentration distribution as illustrated in FIG. 2A. For details of the plasma treatment, refer to the description of the process P216 in FIG.

If the passivation film 740 is formed by plasma treatment in an atmosphere containing nitrogen similarly to the process P216 of FIG. 3, the capping layer 130 The first portion 740A covering the upper surface 130T of the capping layer 130 may be formed of a metal nitride or a metal oxynitride including a metal constituting the capping layer 130. [

In some embodiments, the exposed portions of each of the buffer pattern 150P, the light absorption pattern 170P, and the low reflection pattern 172P in the passivation film 740 at a position spaced apart from the capping layer 130 The covering second portion 740B may include a different component from the components of the first portion 740A. For example, the portion of the second portion 740B of the passivation film 740 covering the buffer pattern 150P may include at least a part of the components constituting the buffer pattern 150P. The portion of the second portion 740B of the passivation film 740 covering the light absorption pattern 170P may include at least a part of the components constituting the light absorption pattern 170P. The portion of the second portion 740B of the passivation film 740 covering the low reflection pattern 172P may include at least a part of the components constituting the low reflection pattern 172P.

In some other embodiments, the passivation film 740 may be formed in a similar manner as in process P316 of FIG. That is, in order to form the passivation film 740, the exposed surface of the capping layer 130 may be heat-treated under a gas atmosphere containing nitrogen. For details of the heat treatment, refer to the description of the process P316 of FIG.

When the passivation film 740 is formed by heat treatment in an atmosphere containing nitrogen similarly to the process P316 of FIG. 4, the first portion 740A of the passivation film 740 and the second portion 740B of the passivation film 740 The constituent may be similar to the case where the passivation film 740 is formed by plasma treatment as in the process P216 in Fig. The passivation film 740 may have a nitrogen concentration distribution as illustrated in FIG. 2A.

In some other embodiments, the passivation film 740 may be formed in a similar manner as in process P326 of FIG. That is, a deposition process may be used to form the passivation film 740. For the details of the deposition process, refer to the description of the process P326 in FIG.

When the passivation film 740 is formed using a deposition process similar to the process P326 of FIG. 5, the upper surface of the capping layer 130 is exposed to the capping layer 130 of the passivation film 740 A first portion 740A covering the exposed portion of the buffer pattern 150P, the light absorption pattern 170P and the low reflection pattern 172P at a position spaced apart from the capping layer 130 The second portion 740B may be made of the same components. The passivation film 740 may have a nitrogen concentration distribution as illustrated in FIG. 2B.

In the reflective type photomask 700 illustrated in FIG. 7E, the first portion 740A and the second portion 740B of the passivation film 740 are exposed to the outside. The capping layer 130 is covered by the passivation film 740 and is not exposed to the outside. The passivation film 740 can not only degrade the extent to which the capping layer 130 is oxidized due to the influence of the external environment, but also act to constitute the cleaning liquid in an environment exposed to the external environment, for example, It is possible to suppress the phenomenon that the oxygen radical penetrates into the lower film quality of the capping layer 130, for example, the multiple reflection film 120 to deteriorate the function of the photomask. Particularly, when the reflection type photomask 700 is repeatedly exposed to a cleaning atmosphere consisting of UV irradiation, a cleaning solution, or a combination thereof, and a cleaning process which is likely to damage the exposed surface of the reflection type photomask 700 is repeatedly performed The capping layer 130 is protected by the passivation film 740 to prevent oxygen from penetrating through the capping layer 130 or peeling off the capping layer 130. [ Accordingly, it is possible to prevent the reflection characteristic of the multiple reflection film 120 from being deteriorated and the lifetime of the reflection type photomask 700 can be improved.

Evaluation example  One

 8A is a graph showing X-ray photoelectron spectroscopy (XPS) analysis results of the reflection type photomask 700 obtained by the method described with reference to FIGS. 7A to 7E.

8A, in the reflection type photomask 700, the exposed surface of the capping layer 130 made of a Ru film is subjected to plasma treatment under an N ₂ atmosphere to remove the capping layer 130 Thereby forming a passivation film 740 covering the surface. At this time, for the plasma treatment of the surface of the capping layer 130, a plasma processing apparatus used for performing an ashing process on a semiconductor wafer in a general semiconductor device manufacturing process was used. While the temperature in the reaction chamber for the plasma treatment at about 100 ℃ and supplying N ₂ gas at about 350 sccm, and supplying a high frequency power of about 500 W in the reaction chamber around the exposed surface of the capping layer 130 Plasma treatment was performed for 120 seconds.

The surface of the reflective type photomask was subjected to XPS analysis after a cleaning process comprising a combination of ozone water and UV irradiation was repeatedly carried out on the reflection type photomask obtained by plasma processing the exposed surface of the capping layer 130 as described above, As can be seen from the portion indicated by the arrow A in Fig. 8A, the N component was increased at the surface of the Ru film. This shows that the surface of the capping layer 130 is subjected to a plasma treatment under a nitrogen atmosphere, and the surface of the Ru film constituting the capping layer 130 is nitrided to form a passivation film 740 made of RuN. By forming the RuN film on the surface of the Ru film in the photomask as described above, it is possible to prevent the Ru film from being oxidized by the RuN film even if the photomask is exposed to the active oxygen in the cleaning process combining the ozone water and UV irradiation.

Control Example  One

8B to 8D are graphs showing XPS analysis results of the capping layer 130 exposed to the outside, in the case where the process of forming the passivation film 740 is omitted and a reflective photomask is manufactured.

8B to 8D, the photomask in which the capping layer 130 made of a Ru film is exposed to the outside is subjected to a cleaning process in which ozone water and UV irradiation are combined, without surface treatment by a plasma treatment in a nitrogen atmosphere .

8B is a result of XPS analysis of the surface of the capping layer made of the Ru film exposed to the outside of the photomask. 8C and 8D illustrate a bulk portion of the capping layer exposed by etching for about 60 seconds along the thickness direction of the capping layer from the surface of the capping layer made of the Ru film exposed to the outside of the photomask, This is a result.

8B to 8D, a cleaning process in which ozone water and UV irradiation are combined in a state in which the capping layer 130 made of a Ru film is exposed to the outside is performed without a surface treatment by a plasma treatment in a nitrogen atmosphere, 8B, 8C, and 8D, the surface of the Ru film, as well as the surface of the Si film constituting the multiple reflective film 120 under the Ru film, Layer is oxidized.

Evaluation example  2

The cleaning step of combining the photomask according to the embodiment used in Evaluation Example 1 and the control photomask used in Control Example 1 was repeated several times in combination with ozone water and UV irradiation and then the capping layer 130 was constituted The damage occurred in the Ru film.

As a result, in the photomask according to the control example, the Ru film constituting the capping layer 130 started to be damaged after 7 to 8 times cleaning, whereas in the photomask according to the embodiment, the Ru film started to be damaged after 25 times cleaning , It was confirmed that the resistance to the cleaning process was increased.

Evaluation example  3

9 shows the relationship between the exposed surface 9A of the passivation film 740 and the exposed surface of the passivation film 740 with respect to the reflective photomask 700 obtained by the method described with reference to Figs. And the bulk portion of the passivation film 740 exposed by etching about 2 nm along the thickness direction of the film 740, respectively.

FIG. 9 also shows the results of XPS analysis of the surface 9C of the capping layer exposed to the outside in the photomask according to the control example used in the evaluation of FIGS. 8B to 8D.

From the results shown in FIG. 9, when the surface of the Ru film constituting the capping layer of the photomask was subjected to plasma treatment in a nitrogen atmosphere to form a passivation film, the N component was detected when the surface and the bulk region of the passivation film were analyzed. Particularly, in the bulk region, N component is detected from the surface to about 2 nm etched region, and it can be confirmed that the N component penetrates into the Ru film. Therefore, it can be seen from the results of FIG. 6 that a passivation film made of a RuN thin film is formed on the surface of the capping layer made of the Ru film. It can also be seen that a RuN thin film having an N concentration profile in which the N concentration decreases from the surface of the passivation film toward the inside along the thickness direction is obtained.

FIG. 10 is a flowchart illustrating a method of manufacturing an integrated circuit device according to embodiments of the present invention. Referring to FIG.

In step P412, a wafer is provided that includes a feature layer.

In some embodiments, the feature layer may be a conductive layer or an insulating layer formed on the wafer. For example, the feature layer may comprise a metal, a semiconductor, or an insulating material. In some other embodiments, the feature layer may be part of the wafer.

In step P414, a photoresist film is formed on the feature layer. The photoresist film may be formed of a resist material for extreme ultraviolet (EUV) (13.5 nm), but the technical idea of the present invention is not limited thereto. For example, the photoresist film may be composed of a resist for F ₂ excimer laser (157 nm), a resist for ArF excimer laser (193 nm), or a resist for KrF excimer laser (248 nm). The photoresist film may be a positive type photoresist or a negative type photoresist.

In some embodiments, in order to form a photoresist film of the positive type photoresist, a photosensitive polymer having an acid-labile group, a potential acid, and a solvent, A photoresist composition may be spin coated over the feature layer.

In some embodiments, the photosensitive polymer may comprise a (meth) acrylate-based polymer. The (meth) acrylate-based polymer may be an aliphatic (meth) acrylate-based polymer. For example, the photosensitive polymer may be selected from the group consisting of polymethylmethacrylate (PMMA), poly (t-butylmethacrylate), poly (methacrylic acid) , Poly (norbornylmethacrylate), a binary or ternary copolymer of repeating units of the (meth) acrylate-based polymers, or a mixture thereof. In addition, the above-described photosensitive polymers may be substituted with various acid-labile protecting groups. The protecting group may be selected from the group consisting of t-butoxycarbonyl (t-BOC), tetrahydropyranyl, trimethylsilyl, phenoxyethyl, cyclohexenyl, t-butoxycar Tert-butoxycarbonylmethyl, tert-butyl, adamantyl, or norbornyl groups. However, the technical idea of the present invention is not limited to the above exemplified.

In some embodiments, the potential acid may be a PAG (photoacid generator), a TAG (thermoacid generator), or a combination thereof. In some embodiments, the PAG is a light source selected from any one of EUV light (1 to 31 nm), F2 excimer laser (157 nm), ArF excimer laser (193 nm), and KrF excimer laser And may be made of a material which generates an acid upon exposure. The PAG may be composed of an onium salt, a halogen compound, a nitrobenzyl ester, an alkylsulfonate, a diazonaphthoquinone, an iminosulfonate, a disulfone, a diazomethane, a sulfonyloxyketone and the like.

In Step P416, the photoresist film formed in Step P414 is exposed in the reflective exposure system using the photomask according to the embodiments of the present invention. For example, as the photomask, a reflection type photomask obtained from the reflection type photomask blank 100 shown in Fig. 1 and at least one of the reflection type photomasks 600 and 700 exemplified in Figs. 6E and 7E Can be used.

The photoresist film may be exposed using the EUV light reflected from the multiple reflective film 120 through the passivation films 140 and 740 of the photomasks 600 and 700 and the capping layer 130 in the exposure process.

In Step P418, the exposed photoresist film is developed to form a photoresist pattern.

In step P420, the feature layer is processed using the photoresist pattern.

In some embodiments, to process the feature layer according to process P420, the feature layer may be etched using the photoresist pattern as an etch mask to form a fine feature pattern.

In some other embodiments, impurity ions can be implanted into the feature layer using the photoresist pattern as an ion implantation mask to process the feature layer according to process P420.

In some other embodiments, a separate process film may be formed over the feature layer exposed through the photoresist pattern formed in process P418 to process the feature layer in accordance with process P420. The process film may be a conductive film, an insulating film, a semiconductor film, or a combination thereof.

11 is a block diagram of a memory card 1200 including integrated circuit elements fabricated using a reflective photomask according to embodiments of the present invention.

Memory card 1200 includes a memory controller 1220 that generates a command and address signal C / A, and a memory module 1210, e.g., a flash memory that includes one or more flash memory elements. The memory controller 1220 includes a host interface 1223 that transmits and receives command and address signals to and from the host and a command and address signal to the memory module 1210, (Not shown). The host interface 1223, the controller 1224 and the memory interface 1225 communicate with a processor 1222, such as a CPU and a controller memory 1221, such as SRAM, via a common bus.

Memory module 1210 receives command and address signals from memory controller 1220 and as a response stores data in at least one of the memory elements on memory module 1210 and retrieves data from at least one of the memory elements. Each memory element includes a plurality of addressable memory cells and a decoder for receiving the command and address signals and generating row and column signals to access at least one of the addressable memory cells during a programming and a reading operation.

Each component of the memory card 1200 including the memory controller 1220, at least one of the electronic components 1221, 1222, 1223, 1224, 1225 included in the memory controller 1220, and the memory module 1210 For example, a reflection type photomask obtained from the reflection type photomask blank 100 shown in FIG. 1, and a reflection type photomask obtained from the reflection type photomask shown in FIG. 6E and FIG. 7E according to embodiments of the technical idea of the present invention And an integrated circuit device fabricated using at least one of the reflective photomasks 600, 700.

12 is a block diagram of a memory system 1300 employing a memory card 1310 including integrated circuit devices fabricated using reflective photomasks according to embodiments of the present invention.

The memory system 1300 may include a processor 1330 such as a CPU that communicates over a common bus 1360, a random access memory 1340, a user interface 1350, and a modem 1320. Each of the devices transmits a signal to and receives a signal from memory card 1310 via bus 1360. A memory system 1300 including a processor 1330, a random access memory 1340, a user interface 1350 and a modem 1320 in combination with a memory card 1310 may be implemented in accordance with embodiments of the inventive concept A reflection type photomask, for example, a reflection type photomask obtained from the reflection type photomask blank 100 shown in FIG. 1, and at least one of the reflection type photomasks 600 and 700 exemplified in FIGS. 6E and 7E ≪ RTI ID = 0.0 > and / or < / RTI >

The memory system 1300 can be applied to various electronic applications. For example, it can be applied to solid state drives (SSD), CMOS image sensors (CIS), and computer application chipset.

The memory systems and devices disclosed herein can be used in various applications including, for example, ball grid arrays (BGA), chip scale packages (CSP), plastic leaded chip carriers (PLCC), plastic dual in- chip package, a wafer-level fabricated package (WFP), a wafer-level processed stock package (WSP), and the like, and the present invention is not limited thereto.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, This is possible.

The present invention relates to a reflective type photomask blank and a method of fabricating the same and a reflective type photomask blank using the same. Mask.

Claims (10)

A multiple reflection film formed on the photomask substrate,
A capping layer formed on the reflective film and including a transition metal;
A passivation film which is in contact with at least a part of the capping layer on the opposite side of the multiple reflection film and includes a transition metal and nitrogen atoms;
And a light absorbing layer formed on the capping layer. The method according to claim 1,
Wherein at least a part of the passivation film is made of a metal nitride containing Ru and N. < RTI ID = 0.0 > 18. < / RTI > The method according to claim 1,
Wherein the passivation film has a nitrogen concentration distribution in which the content of nitrogen atoms gradually decreases as the capping layer approaches the capping layer along the thickness direction of the passivation film from the surface of the passivation film opposite to the capping layer. . A multiple reflection film formed on the photomask substrate,
A capping layer formed on the reflective film and including a transition metal;
A passivation film which is in contact with at least a part of the capping layer on the opposite side of the multiple reflection film and includes a transition metal and nitrogen atoms;
And a light absorption pattern covering a part of the capping layer. 5. The method of claim 4,
Wherein the passivation film includes a first portion exposed to the outside and a second portion interposed between the capping layer and the light absorption pattern,
Wherein the first portion and the second portion are in contact with the capping layer, respectively. 5. The method of claim 4,
Wherein the passivation film includes a first portion that is in contact with the capping layer and a second portion that covers the light absorbing pattern at a position spaced apart from the capping layer. The method according to claim 6,
Wherein the first portion and the second portion of the passivation film are each exposed to the outside. 5. The method of claim 4,
Wherein the passivation film comprises a first portion in contact with the capping layer and a second portion overlying the light absorption pattern at a location spaced apart from the capping layer,
Wherein the first portion and the second portion are made of different components. 5. The method of claim 4,
Wherein the passivation film comprises a first portion in contact with the capping layer and a second portion overlying the light absorption pattern at a location spaced apart from the capping layer,
Wherein the first portion and the second portion are made of the same component. An integrated circuit device fabricated using the photomask according to claim 4.

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