JP6789970B2 - 高輝度発光デバイス用の周辺ヒートシンク装置 - Google Patents
高輝度発光デバイス用の周辺ヒートシンク装置 Download PDFInfo
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- JP6789970B2 JP6789970B2 JP2017550723A JP2017550723A JP6789970B2 JP 6789970 B2 JP6789970 B2 JP 6789970B2 JP 2017550723 A JP2017550723 A JP 2017550723A JP 2017550723 A JP2017550723 A JP 2017550723A JP 6789970 B2 JP6789970 B2 JP 6789970B2
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- 230000002093 peripheral effect Effects 0.000 title 1
- 238000006243 chemical reaction Methods 0.000 claims description 50
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- 239000002470 thermal conductor Substances 0.000 claims description 15
- 230000008878 coupling Effects 0.000 claims description 13
- 238000010168 coupling process Methods 0.000 claims description 13
- 238000005859 coupling reaction Methods 0.000 claims description 13
- 238000000605 extraction Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 239000002648 laminated material Substances 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 description 7
- 239000000945 filler Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- 230000003685 thermal hair damage Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
Description
米国特許出願公開第2011/0062469号は、発光デバイス(LED)ダイと、LEDの上の光学素子と、オプションのヒートシンクとを含む光エミッタを開示している。LEDの上の波長変換素子上に、光路内で、透明な、半透明な、又は散乱性のヒートシンクが設けられ得る。
米国特許出願公開第2011/0210369号は、半導体発光素子と波長変換セラミックとを有する発光モジュールを開示している。反射性のフィルムが、波長変換セラミックの上に設けられて、波長変換素子の発光領域を狭める。反射フィルム上にヒートシンクが設けられ得る。
Claims (14)
- 発光素子と、
前記発光素子に結合され、光取り出し領域を持つ波長変換素子と、
前記波長変換素子の前記光取り出し領域上の熱導体であり、当該熱導体は、反射性であり、且つ、より小さい光取り出し面積を持つ窓が作り出されるように前記波長変換素子の前記光取り出し領域を覆っている、熱導体と、
少なくとも一対の個別の熱ピラーであり、前記波長変換素子の反対側の2つの側に位置している熱ピラーと、
前記反射性の熱導体を前記熱ピラーの対に結合している熱結合素子と、
を有する発光構造体。 - 前記熱ピラーが上に位置する熱伝導性基板、を更に有する請求項1に記載の発光構造体。
- 前記波長変換素子の前記反対側の2つの側とは異なる第3の側に位置する第3の熱ピラー、を更に有する請求項1に記載の発光構造体。
- 前記波長変換素子の前記第3の側とは反対側の第4の側に位置する第4の熱ピラー、を更に有する請求項3に記載の発光構造体。
- 前記熱結合素子は、少なくとも10μmの厚さである金属を有する、請求項1に記載の発光構造体。
- 前記熱結合素子は可撓性材料を有する、請求項1に記載の発光構造体。
- 前記熱結合素子はラミネート材を有する、請求項1に記載の発光構造体。
- 前記反射性の熱導体は反射層及び熱拡散層を有する、請求項1に記載の発光構造体。
- 前記反射層は分布ブラッグ反射器(DBR)を有する、請求項8に記載の発光構造体。
- 前記熱拡散層は、少なくとも10μmの厚さで金属層を有する、請求項8に記載の発光構造体。
- 前記波長変換素子はセラミック蛍光体プレートを有する、請求項1に記載の発光構造体。
- 前記光取り出し面積は、前記波長変換素子の表面の面積のうちの25%未満である、請求項1に記載の発光構造体。
- 前記発光素子及び前記波長変換素子を取り囲む反射性の誘電体材料、を含む請求項1に記載の発光構造体。
- 発光素子と、
前記発光素子に結合され、光取り出し領域を持つ波長変換素子と、
前記波長変換素子の前記光取り出し領域上の熱導体であり、当該熱導体は、反射性であり、且つ、より小さい光取り出し面積を持つ窓が作り出されるように前記波長変換素子の前記光取り出し領域を覆っている、熱導体と、
前記発光素子及び波長変換素子を取り囲む熱ピラーと、
前記反射性の熱導体を前記熱ピラーに結合している熱結合素子と、
を有する発光構造体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562139820P | 2015-03-30 | 2015-03-30 | |
US62/139,820 | 2015-03-30 | ||
PCT/EP2016/056323 WO2016156135A1 (en) | 2015-03-30 | 2016-03-23 | Peripheral heat sinking arrangement for high brightness light emitting devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018510513A JP2018510513A (ja) | 2018-04-12 |
JP6789970B2 true JP6789970B2 (ja) | 2020-11-25 |
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JP2017550723A Active JP6789970B2 (ja) | 2015-03-30 | 2016-03-23 | 高輝度発光デバイス用の周辺ヒートシンク装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11005021B2 (ja) |
EP (1) | EP3278374B1 (ja) |
JP (1) | JP6789970B2 (ja) |
KR (1) | KR102556681B1 (ja) |
CN (1) | CN107454985B (ja) |
TW (1) | TWI683458B (ja) |
WO (1) | WO2016156135A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US10797029B2 (en) | 2017-12-19 | 2020-10-06 | PlayNitride Inc. | Structure with micro device |
US10748804B2 (en) | 2017-12-19 | 2020-08-18 | PlayNitride Inc. | Structure with micro device having holding structure |
US10804130B2 (en) | 2017-12-19 | 2020-10-13 | PlayNitride Inc. | Structure with micro device |
CN109935610B (zh) * | 2017-12-19 | 2023-04-07 | 英属开曼群岛商錼创科技股份有限公司 | 微型元件结构 |
CN110391321B (zh) | 2018-04-19 | 2021-05-28 | 展晶科技(深圳)有限公司 | 发光二极管封装体及其制造方法 |
DE102018122166A1 (de) * | 2018-09-11 | 2020-03-12 | Osram Opto Semiconductors Gmbh | Optoelektronische halbleitervorrichtung mit einem trägerelement und einem elektrischen kontaktelement, optoelektronisches bauelement sowie verfahren zur herstellung der optoelektronischen halbleitervorrichtung |
CN109586165B (zh) * | 2019-01-25 | 2020-04-07 | 维沃移动通信有限公司 | 一种激光模组及电子设备 |
CN112578551A (zh) | 2019-09-30 | 2021-03-30 | 台达电子工业股份有限公司 | 波长转换装置 |
CN112578552A (zh) * | 2019-09-30 | 2021-03-30 | 台达电子工业股份有限公司 | 波长转换装置 |
Family Cites Families (20)
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US7692207B2 (en) * | 2005-01-21 | 2010-04-06 | Luminus Devices, Inc. | Packaging designs for LEDs |
US7170100B2 (en) * | 2005-01-21 | 2007-01-30 | Luminus Devices, Inc. | Packaging designs for LEDs |
JP2006351847A (ja) | 2005-06-16 | 2006-12-28 | Fujifilm Holdings Corp | 半導体発光装置 |
US7700967B2 (en) | 2007-05-25 | 2010-04-20 | Philips Lumileds Lighting Company Llc | Illumination device with a wavelength converting element held by a support structure having an aperture |
TWI404228B (zh) * | 2007-07-12 | 2013-08-01 | Epistar Corp | 半導體發光裝置與其製造方法 |
CN101978516A (zh) * | 2008-03-21 | 2011-02-16 | 皇家飞利浦电子股份有限公司 | 发光器件 |
JP5236344B2 (ja) | 2008-04-24 | 2013-07-17 | パナソニック株式会社 | 半導体発光装置 |
WO2009155084A1 (en) * | 2008-05-30 | 2009-12-23 | Stryker Corporation | Method of assembling an electrode array that includes a plastically deformable carrier |
WO2010044240A1 (ja) * | 2008-10-15 | 2010-04-22 | 株式会社小糸製作所 | 発光モジュール、発光モジュールの製造方法、および灯具ユニット |
JP5393796B2 (ja) | 2009-08-27 | 2014-01-22 | 京セラ株式会社 | 発光装置 |
US20110062469A1 (en) * | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Molded lens incorporating a window element |
JP2013077679A (ja) * | 2011-09-30 | 2013-04-25 | Citizen Electronics Co Ltd | 半導体発光装置とその製造方法 |
US8957440B2 (en) * | 2011-10-04 | 2015-02-17 | Cree, Inc. | Light emitting devices with low packaging factor |
US20130094179A1 (en) * | 2011-10-13 | 2013-04-18 | Intematix Corporation | Solid-state light emitting devices with multiple remote wavelength conversion components |
WO2013069924A1 (en) * | 2011-11-08 | 2013-05-16 | Lg Innotek Co., Ltd. | Light emitting device |
JP5856816B2 (ja) | 2011-11-14 | 2016-02-10 | 株式会社小糸製作所 | 発光装置 |
KR20130057676A (ko) | 2011-11-24 | 2013-06-03 | 삼성전자주식회사 | 발광장치 |
JP6065811B2 (ja) * | 2012-12-18 | 2017-01-25 | 豊田合成株式会社 | 発光装置及びその製造方法 |
JP6089686B2 (ja) | 2012-12-25 | 2017-03-08 | 日亜化学工業株式会社 | 発光装置 |
KR101704628B1 (ko) * | 2013-03-15 | 2017-02-08 | 파나소닉 아이피 매니지먼트 가부시키가이샤 | 발광 모듈 |
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- 2016-03-23 US US15/562,855 patent/US11005021B2/en active Active
- 2016-03-23 CN CN201680019983.0A patent/CN107454985B/zh active Active
- 2016-03-23 WO PCT/EP2016/056323 patent/WO2016156135A1/en active Application Filing
- 2016-03-23 JP JP2017550723A patent/JP6789970B2/ja active Active
- 2016-03-23 KR KR1020177031151A patent/KR102556681B1/ko active IP Right Grant
- 2016-03-23 EP EP16711003.0A patent/EP3278374B1/en active Active
- 2016-03-28 TW TW105109733A patent/TWI683458B/zh active
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Publication number | Publication date |
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US11005021B2 (en) | 2021-05-11 |
JP2018510513A (ja) | 2018-04-12 |
KR102556681B1 (ko) | 2023-07-18 |
KR20170132824A (ko) | 2017-12-04 |
TW201701510A (zh) | 2017-01-01 |
EP3278374B1 (en) | 2018-06-20 |
WO2016156135A1 (en) | 2016-10-06 |
CN107454985B (zh) | 2020-08-21 |
EP3278374A1 (en) | 2018-02-07 |
US20180108823A1 (en) | 2018-04-19 |
CN107454985A (zh) | 2017-12-08 |
TWI683458B (zh) | 2020-01-21 |
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