JP6787118B2 - Manufacturing methods for semiconductor devices, power converters, lead frames, and semiconductor devices - Google Patents

Description

The present invention relates to a semiconductor device including a semiconductor element, a power conversion device using the semiconductor device, and a lead frame used in the semiconductor device.

The semiconductor device has a semiconductor element inside a housing made of an insulating material such as resin, and is configured by projecting a plurality of lead terminals electrically connected to the semiconductor element from the side surface of the housing. The plurality of lead terminals project from the side surface of the housing and extend in parallel with each other. By soldering a plurality of lead terminals to the printed circuit board, the semiconductor element inside the semiconductor device and the external electric circuit can be electrically connected.

In a conventional semiconductor device, a plurality of parallel lead terminals that protrude from the side surface of the semiconductor device housing and extend in a direction perpendicular to the side surface of the housing are twisted 90 ° from the middle portion of the lead terminals and printed. It was in contact with the pad of the board. Since the tip of the lead terminal is rotated by 90 ° and the thickness direction of the lead terminal, which is the narrower one, comes into contact with the pad, the width of the pad of the printed circuit board to which the tip of the lead terminal abuts should be narrowed. Was made. As a result, the distance between the pads is widened to prevent the formation of a solder bridge (see, for example, Patent Document 1).

Jikkenhei 3-116050

However, in the conventional semiconductor device described in Patent Document 1, since the lead terminal is twisted by 90 ° at the intermediate portion, the lead terminal is twisted at a large angle and the mechanical strength of the lead terminal is lowered. There was a problem.

The present invention has been made to solve the above-mentioned problems, and even if the tip of the lead terminal is rotated to prevent the occurrence of a solder bridge, it is possible to suppress a decrease in the mechanical strength of the lead terminal. An object of the present invention is to provide a semiconductor device.

The semiconductor device according to the present invention includes a first main surface having a first side, a second main surface provided on the back side of the first main surface, and a first main surface and a second main surface. A housing having a side surface connected to and having a portion parallel to the first side, and a thickness in a direction in which the width in the direction parallel to the first main surface at the contact portion with the side surface protrudes from the side surface and is perpendicular to the width. A lead terminal having a longer distance is provided, and the lead terminal is connected to an inclined portion extending in a direction inclined from a direction perpendicular to the first side and an inclined portion, and is connected to the inclined portion in a direction perpendicular to the first main surface. A bent portion that is bent and extended in a direction perpendicular to the first main surface, a twisted portion that is connected to the bent portion and twisted in a direction in which the inclined portion is inclined from a direction perpendicular to the first side, and a twist. It is provided with a tip portion connected to the portion.

According to the semiconductor device according to the present invention, the rotation of the tip of the lead terminal for preventing the occurrence of a solder bridge is composed of an inclined portion and a twisted portion provided on the lead terminal, so that the lead terminal is twisted. The twist angle can be reduced to suppress a decrease in the mechanical strength of the lead terminal.

It is an external view which shows the semiconductor device in Embodiment 1 of this invention. It is an external view which shows the structure of the lead terminal of the semiconductor device in Embodiment 1 of this invention. It is sectional drawing which shows the structure of the semiconductor device in Embodiment 1 of this invention. It is a figure which shows the structure of the lead frame at the time of manufacturing of the semiconductor device in Embodiment 1 of this invention. It is a figure which shows the manufacturing method of the semiconductor device in Embodiment 1 of this invention. It is a perspective view which shows the lead forming process in the manufacturing method of the semiconductor device in Embodiment 1 of this invention. It is a top view which shows the lead forming process in the manufacturing method of the semiconductor device in Embodiment 1 of this invention. It is a figure which shows the appearance of mounting the semiconductor device in Embodiment 1 of this invention on a printed circuit board. It is a figure which shows the relationship between the rotation angle of the tip of the lead terminal of the semiconductor device in Embodiment 1 of this invention, and the interval of the tip of the adjacent lead terminal which increases. It is a figure which shows the method of soldering the lead terminal of the semiconductor device in Embodiment 1 of this invention to a printed circuit board. It is a top view which shows the appearance after molding of the lead frame used for the semiconductor device in Embodiment 1 of this invention, and the lead frame used for the semiconductor device of a comparative example. It is a top view which shows the external view at the time of manufacturing of the lead frame in Embodiment 1 of this invention. It is a top view which shows the semiconductor device in Embodiment 2 of this invention. It is a block diagram which shows the structure of the power conversion system in Embodiment 3 of this invention. FIG. 5 is an external view showing a configuration in which a semiconductor device is mounted on a printed circuit board of the power conversion device according to the third embodiment of the present invention.

Embodiment 1.
First, the configuration of the semiconductor device according to the first embodiment of the present invention will be described. FIG. 1 is an external view showing a semiconductor device according to the first embodiment of the present invention. 1 (a) is a plan view of the semiconductor device 100, FIG. 1 (b) is a side view of the semiconductor device 100, and FIG. 1 (c) is a front view of the semiconductor device 100. Further, FIG. 2 is an external view showing the configuration of lead terminals of the semiconductor device according to the first embodiment of the present invention. FIG. 2 is an enlarged view of the lead terminal 11 of the semiconductor device 100 shown in FIG. 2 (a) to 2 (c) correspond to FIGS. 1 (a) to 1 (c), respectively, FIG. 2 (a) is a plan view of the lead terminal 11, and FIG. 2 (b) is a lead terminal 11. 2 (c) is a front view of the lead terminal 11. In addition, FIGS. 1 and 2 also show XYZ orthogonal coordinate axes for explaining the orientation of the semiconductor device 100 and the lead terminal 11. Similarly, the XYZ orthogonal coordinate axes are shown in the other figures of the present invention.

In FIG. 1, the semiconductor device 100 includes a housing 10 made of a resin such as an epoxy resin, and a lead terminal 11 for connecting the semiconductor device 100 to an external printed circuit board or the like. As shown in FIG. 1, the housing 10 of the semiconductor device 100 has a rectangular parallelepiped shape, and has an upper surface 10a which is a first main surface parallel to a YY plane and a lower surface which is a second main surface. It has 10b and four side surfaces connecting the upper surface 10a and the lower surface 10b.

The shape of the housing 10 is not limited to a rectangular parallelepiped shape, and has a first main surface and a second main surface provided on the back side of the first main surface, and the first main surface has a first main surface. It suffices to have at least one linear first side, and the side surface connecting the first main surface and the second main surface may have a portion parallel to the first side.

In the present invention, for convenience, as shown in FIG. 1, the upper surface and the lower surface of the housing 10 are referred to as the upper surface 10a in the direction in which the lead terminal 11 is bent and the back side of the upper surface 10a as the lower surface 10b. The side where the lead terminal 11 is bent may be referred to as a lower surface, and the back side thereof may be referred to as an upper surface. The names of the first main surface and the second main surface may be interchanged in the same manner. The upper surface 10a and the lower surface 10b are preferably rectangular flat surfaces, and the side on the side where the lead terminal 11 is provided is linear.

Of the four side surfaces, the side surfaces connected to the long sides of the upper surface 10a and the lower surface 10b are the long side side surfaces 10c and 10d, and the side surfaces connected to the short sides of the upper surface 10a and the lower surface 10b are the short side side surfaces. 10e and 10f. In FIG. 1, the long side side surfaces 10c and 10d are shown as bent surfaces, and the short side side surfaces 10e and 10f are shown as flat surfaces, but the long side side surfaces 10c and 10d and the short side side surfaces 10e, 10f may be a surface having any shape such as a flat surface, a curved surface, and a bent surface. However, at least one of the long side side surfaces 10c and 10d on which the lead terminal 11 protrudes has a portion parallel to the linear side of the upper surface 10a or the lower surface 10b. In FIG. 1, since the long side of the upper surface 10a is a straight side, the long side side surface 10c and the long side side surface 10d each have a portion parallel to the long side at the connection portion with the upper surface 10a. ..

As shown in FIG. 1, a plurality of lead terminals 11 project from the long side side surfaces 10c and 10d of the housing 10, and the plurality of lead terminals 11 are the long sides of the upper surface 10a or the lower surface 10b of the housing 10. Multiple are arranged in the direction along. A plurality of lead terminals 11 project from both side surfaces of the long side side surface 10c of the housing 10 and the long side side surface 10d located on the opposite side of the long side side surface 10c, and each of the plurality of lead terminals 11 projects from the upper surface of the housing 10. A plurality of 10a or the lower surface 10b are arranged in the direction along the long side. In the present invention, the direction in which the plurality of lead terminals 11 are arranged is referred to as the arrangement direction. The arrangement direction is a direction along the long side of the upper surface 10a or the lower surface 10b of the housing 10, and is a direction parallel to the long side of the upper surface 10a or the lower surface 10b of the housing 10.

As shown in FIGS. 1B and 1C, the plurality of lead terminals 11 projecting from the long side side surfaces 10c and 10d of the housing 10 are extended in a direction away from the housing 10 by a predetermined distance, and then the housing. It is bent toward the upper surface 10a of 10. The lead terminal 11 is integrally formed with a lead frame to which a semiconductor element is bonded inside the housing 10, and the thickness of the lead terminal 11 is the same as the thickness of the lead frame inside the housing 10. It has become.

The cross section of the lead terminal 11 has a rectangular shape having a long side and a short side, and the long side is called the width of the lead terminal 11 and the short side is called the thickness of the lead terminal 11. At the contact portion between the lead terminal 11 and the side surfaces 10c and 10d on the long side on which the lead terminal 11 protrudes, the width of the lead terminal 11 is parallel to the upper surface 10a. In FIG. 1, the lead terminal 11 projects from the long side side surfaces 10c and 10d in a direction perpendicular to the long side of the upper surface 10a, but is inclined by a predetermined angle from the direction perpendicular to the long side of the upper surface 10a. It may be protruding. In this case, the width direction of the lead terminal 11 is not parallel to the long side of the upper surface 10a, but includes the contact point between the lead terminal 11 and the long side side surface 10c or the long side side surface 10d, and is parallel to the upper surface 10a. The width of the lead terminal 11 is defined as the distance in the direction perpendicular to the extending direction of the lead terminal 11. The thickness of the lead terminal 11 is a distance in the direction perpendicular to the width of the lead terminal 11. The lead terminal 11 is not limited to having a rectangular cross section, and may have a cross section having another shape such as an ellipse having a width distance longer than the thickness.

Further, in FIG. 1, the lead terminal 11 projects in a direction parallel to the upper surface 10a from the long side side surfaces 10c and 10d, but the direction in which the lead terminal 11 projects from the long side side surface 10c and 10d is the upper surface. The direction may be inclined by a predetermined angle from the direction parallel to 10a. However, since the lead terminal 11 is formed of a metal plate integrated with a lead frame to which a semiconductor element or the like is bonded in the housing 10, the lead terminal 11 is projected from the long side side surfaces 10c and 10d on the upper surface 10a. It is preferable that the direction is parallel to the above because the manufacturing process can be reduced.

Next, the configuration of the lead terminal 11 will be described in detail with reference to FIG. FIG. 2 is an enlarged view of one of the plurality of lead terminals 11 projecting from the long side side surface 10d of the housing 10 shown in FIG. 1, but projects from the long side side surface 10c. The lead terminal 11 has the same configuration. The XYZ orthogonal coordinate axes shown in FIG. 2 indicate the same direction as the XYZ orthogonal coordinate axes shown in FIG.

As shown in FIG. 2, the lead terminal 11 has a protruding portion 11a, an inclined portion 11b, a bent portion 11c, a twisted portion 11d, and a tip portion 11e. The protruding portion 11a is a portion where the lead terminal 11 protrudes from the long side side surface 10c and 10d of the housing 10 in the direction perpendicular to the long side of the upper surface 10a. The inclined portion 11b is a portion connected to the protruding portion 11a and extended in a direction inclined by a predetermined angle from a direction perpendicular to the long side of the upper surface 10a, which is the extending direction of the protruding portion 11a. The bent portion is a portion connected to the inclined portion 11b, in which the lead terminal 11 is bent in a direction perpendicular to the upper surface 10a and extended in a direction perpendicular to the upper surface 10a. The portion of the bent portion 11c that is stretched in the direction perpendicular to the upper surface 10a is preferably 1 mm or more, but may be an extremely short distance of 1 mm or less. The twisted portion 11d is a portion connected to the bent portion 11c and twisted in a direction in which the inclined portion 11b is inclined from a direction perpendicular to the long side of the upper surface 10a. The tip portion 11e is a portion connected to the twisted portion 11d and stretched in the stretching direction of the twisted portion 11d. The tip portion 11e is provided at the tip of the lead terminal 11 and is inserted into a through hole such as an external printed circuit board of the semiconductor device 100 and solder-bonded.

The verticality in the direction perpendicular to the upper surface 10a referred to here is not strictly limited to 90 °, and may be substantially vertical. Since the tip portion 11e of the lead terminal 11 of the semiconductor device 100 is inserted into the through hole of the printed circuit board 12 and solder-bonded, if the tip portion 11e of the lead terminal 11 extends in a direction perpendicular to the upper surface 10a, It can be easily inserted into the through hole of the printed circuit board 12. That is, if the tip portion 11e of the lead terminal 11 can be easily inserted into the through hole of the printed circuit board 12, it may be regarded as vertical, and if it is 90 ° ± 5 °, it may be regarded as substantially vertical. , 90 ° ± 2 ° is more preferable.

In FIG. 2A, the alternate long and short dash line AA is the center line of the protruding portion 11a seen from the Z direction and is the extending direction of the protruding portion. The alternate long and short dash line BB is the center line of the inclined portion 11b viewed from the Z direction and is the extending direction of the inclined portion 11b. The alternate long and short dash line CC is the center line on the long axis side of the cross section of the connecting portion between the twisted portion 11d and the bent portion 11c. The alternate long and short dash line DD is the center line on the long axis side of the cross section of the connecting portion between the twisted portion 11d and the tip portion 11e, and is also the center line on the long axis side of the cross section of the tip portion 11e. The cross section of the inclined portion 11b of the lead terminal 11 may have the same shape as the cross section of the tip portion 11e, and the cross section of the protruding portion 11a may also have the same shape as the cross section of the tip portion 11e.

In FIG. 2A, the angle θa is the angle between the alternate long and short dash line AA and the alternate long and short dash line BB, and the protruding portion 11a extends in a direction perpendicular to the long side of the upper surface 10a. It is an angle between the direction perpendicular to the long side of the upper surface 10a and the extending direction of the inclined portion 11b. The angle θb is an angle between the alternate long and short dash line CC and the alternate long and short dash line DD, and is the angle at which the twisted portion 11d is twisted. In the following, the angle θa and the angle θb will be described with the clockwise direction as a positive angle when viewed from the upper surface 10a side of the housing 10.

As shown in the plan view of FIG. 2A, the inclined portion 11b of the lead terminal 11 is inclined at an angle θa in the clockwise direction from the direction perpendicular to the long side of the upper surface 10a, and the lead terminal is inclined. The twisting direction of the twisted portion 11d of 11 is an angle θb twisted in a clockwise direction which is the same direction as the angle θa. That is, the inclination direction of the inclined portion 11b and the twisting direction of the twisted portion are both clockwise in a plan view and are the same direction.

Further, in FIG. 2B, the alternate long and short dash line EE is the center line of the protruding portion 11a seen from the X direction, and the alternate long and short dash line FF is the center line of the tip end portion 11e seen from the X direction. The alternate long and short dash line FF is the extending direction of the twisted portion 11d and the tip portion 11e, and is the direction perpendicular to the upper surface 10a. When the lead terminal 11 projects from the long side side surface 10c and 10d in parallel with the upper surface 10a, the alternate long and short dash line EE and the alternate long and short dash line FF are orthogonal to each other, but the lead terminal 11 has the upper surface 10a. It may be inclined and protrude from the parallel direction. In that case, it is better to set the angle between the alternate long and short dash line FF to 80 ° to 100 ° to suppress the decrease in the mechanical strength of the lead terminal 11. It is preferable because it can be done.

As shown in FIGS. 1 and 2 (a) and 2 (b), the protruding portion 11a protrudes from the long side side surface 10d of the housing 10 in a direction perpendicular to the long side of the upper surface 10a. One end of the protruding portion 11a is in contact with the long side side surface 10d of the housing 10. The other end of the protruding portion 11a on the side far from the long side side surface 10d is connected to the inclined portion 11b. As shown in FIG. 2A, the inclined portion 11b is provided at an angle θa from the protruding portion 11a in a direction parallel to the XY plane, that is, a direction parallel to the upper surface 10a or the lower surface 10b of the housing 10. Has been done. That is, the alternate long and short dash line BB, which is the center line of the inclined portion 11b, is inclined at an angle θa with respect to the alternate long and short dash line AA, which is the center line of the protruding portion 11a. In other words, the alternate long and short dash line BB, which is the center line of the inclined portion 11b, is inclined by an angle θa from the direction perpendicular to the long side of the upper surface 10a or the lower surface 10b of the housing 10 to which the long side side surface 10d is connected. ing. The angle θa may be + 30 ° or more and + 60 ° or less, or −60 ° or more and −30 ° or less, and is preferably + 45 ° or −45 °.

As shown in FIGS. 2A, 2B, and 2C, the inclined portion 11b of the lead terminal 11 is a bent portion 11c and is bent toward the upper surface 10a of the housing 10. The bending at the bent portion 11c is performed by bending a straight line perpendicular to the center line of the inclined portion 11b shown by the alternate long and short dash line BB, that is, a straight line in the width direction of the inclined portion 11b as a bending line. Therefore, the alternate long and short dash line BB shown in FIG. 2A and the alternate long and short dash line CC are orthogonal to each other. The alternate long and short dash line CC is a straight line inclined at an angle θa in the clockwise direction with respect to the long side of the upper surface 10a of the housing 10. As shown in FIG. 2A, the rotation directions of the angle θa and the angle θb are the same, and the twisted portion 11d is twisted in the direction in which the inclined portion 11b is inclined from the direction perpendicular to the long side of the upper surface 10a. There is.

The twisted portion 11d includes a bent portion 11c and a tip portion 11e formed by rotating a lead terminal 11 bent in a direction perpendicular to the upper surface 10a by the bent portion 11c in a clockwise direction by an angle θb in parallel with the upper surface 10a. The part between. In the twisted portion 11d, the surface of the lead terminal 11 in the width direction and the thickness direction is a curved surface. At the position closest to the bent portion 11c of the twisted portion 11d, the center line on the long axis side of the cross section of the lead terminal 11 is the alternate long and short dash line CC in FIG. 2A, and at the position closest to the tip portion 11e, The center line on the long axis side of the cross section of the lead terminal 11 is the alternate long and short dash line DD in FIG. 2A. The angle θb has the same sign as the angle θa and has an absolute value of less than 90 °, may be + 30 ° or more and + 60 ° or less, or -60 ° or more and -30 ° or less, and is + 45 ° or −. 45 ° is preferable. Further, the sum of the angle θa and the angle θb, that is, θa + θb is preferably + 90 ° ± 30 ° or −90 ° ± 30 °, and θa + θb is most preferably + 90 ° or −90 °.

The tip portion 11e is a portion that is inserted into a through hole formed in the printed circuit board and soldered, and is located on the tip side of the lead terminal 11 with respect to the twisted portion 11d. At the tip portion 11e, the surfaces of the surface of the lead terminal 11 in the width direction and the thickness direction are flat.

As described above, in the lead terminal 11 of the semiconductor device 100 of the present invention, the inclined portion 11b is inclined at an angle θa and the twisted portion 11d is twisted at an angle θb. Therefore, as shown in FIG. 2B, the tip portion 11e The rotation angle is θa + θb, and θa + θb = 90 °, so that the cross-sectional shape of the tip portion 11e becomes parallel to the long side of the upper surface 10a of the housing 10 in which the short side in the thickness direction is in the X direction and the width. The long side in the direction is perpendicular to the long side of the upper surface 10a of the housing 10 in the Y direction. That is, the cross section of the tip portion 11e, which is the tip of the lead terminal 11, is shorter in the arrangement direction of the plurality of lead terminals 11 than in the direction perpendicular to the arrangement direction. As a result, the distance between the tip portions 11e of the plurality of lead terminals 11 is wider than when the lead terminals 11 do not have both the inclined portion 11b and the twisted portion 11d. Therefore, the lead terminals 11 are soldered to the printed circuit board. In this case, it is possible to prevent the formation of a solder bridge between the lead terminals.

Then, the inclined portion 11b is provided, and the extending direction of the inclined portion 11b is inclined by an angle θa from the direction perpendicular to the long side of the upper surface 10a, in other words, the direction perpendicular to the arrangement direction of the lead terminals 11, so that the twisted portion 11d Since the tip portion 11e can be rotated by 90 ° even if the twisting angle is smaller than 90 °, the stress applied to the lead terminal 11 by the twisted portion 11d can be reduced, and the mechanical strength of the lead terminal 11 can be reduced. The decrease can be suppressed.

The configuration of the semiconductor device 100 of the present invention will be described in more detail.

FIG. 3 is a cross-sectional view showing the configuration of the semiconductor device according to the first embodiment of the present invention.

The semiconductor device 100 includes an IGBT (Insulated Gate Insulated Bipolar Transistor: Insulated Gate Bipolar Transistor), a MOSFET (Metal-Oxide-Semicondutor Field-Effective Transistor: Metal Oxide Semiconductor Electricity Effect Transistor, etc.), FWD (Free It is internally provided with a semiconductor element for power and a semiconductor element for control that drives and controls a semiconductor element for power such as an IC chip and a diode.

As shown in FIG. 3, the IGBTs 2 and FwD3, which are semiconductor elements for electric power, are bonded to the lead frame 1a by the bonding material 4a and the bonding material 4b, and the control element 8 which is a semiconductor element for control is bonded to the bonding material 4c. It is joined to the lead frame 1b by. Further, a wire 5 made of an aluminum wire or a gold wire is ultrasonically bonded between the IGBT 2 and FwD3 and between each semiconductor element and the lead frames 1a and 1b, and the IGBT 2 and the wire 5 are used for ultrasonic bonding. The FwD3, the control element 8, and the lead frames 1a and 1b are electrically connected to each other. The semiconductor device 100 may be provided with a MOSFET instead of the IGBT 2.

The lead frame 1a and the lead frame 1b are integrally formed with the lead terminal 11, and are formed of a metal plate having a high conductivity such as a copper plate or an aluminum plate. The thickness of the lead frame 1a and the lead frame 1b may be, for example, 0.7 mm. The joining material 4a and the joining material 4b for joining the IGBTs 2 and FwD3 to the lead frame 1a may be solder, and in order to improve the wettability of the solder in the region where the IGBTs 2 and FwD3 of the lead frame 1a are joined, Ag ( It is preferable to form a metal film made of a refractory material such as silver). Further, the bonding materials 4a and 4b are not limited to solder, but are conductive adhesives in which Ag particles having a particle size of about nanometer to submicron are mixed to form a metal bond by a sintering reaction between the Ag particles. There may be. The bonding material 4c for joining the control element 8 to the lead frame 1b may be solder, or may be a conductive adhesive in which conductive metal particles such as Ag particles are mixed with an epoxy resin.

The lead frame 1a to which the IGBTs 2 and FwD3 are bonded is bonded to the heat sink 7 via the insulating layer 6. The insulating layer 6 is a layer having both thermal conductivity and insulating properties, and is formed by mixing insulating particles having high thermal conductivity such as silica, alumina, and aluminum nitride with an insulating resin such as an epoxy resin. To. The heat sink 7 is provided to diffuse the heat generated by the IGBT 2 and FwD3 and dissipate the heat to the outside of the semiconductor device 100, and is made of a metal having a high thermal conductivity such as copper or aluminum. Although the IGBT 2 and FwD3 and the heat sink 7 are electrically insulated by the insulating layer 6, the heat generated by the IGBT 2 and FwD3 is electrically conducted to the heat sink 7 via the insulating layer 6 and is bonded to the heat sink 7. Heat is dissipated through the radiator.

As shown in FIG. 3, the lead frame 1a to which the IGBT 2 and FwD3 are bonded is bent so that the position of the bottom surface is lower than that of the lead frame 1b to which the control element 8 is bonded, and the insulating layer 6 and the heat sink are formed. 7 is joined only to the lead frame 1a. Then, the lead frames 1a and 1b, IGBT2, FwD3, the insulating layer 6, the heat sink 7, the control element 8 and the wire 5 are sealed by the housing 10. The housing 10 is formed in a rectangular parallelepiped shape with an epoxy resin mixed with insulating silica particles. The surface of the heat sink 7 opposite to the side joined to the insulating layer 6 is exposed to the outside of the housing 10, and constitutes the lower surface 10b of the housing 10. A radiator or the like outside the semiconductor device 100 is joined to the lower surface 10b. An upper surface 10a is provided on the opposite side of the lower surface 10b.

Long side side surfaces 10c and 10d are provided between the upper surface 10a and the lower surface 10b of the housing 10, and a part of the lead frames 1a and 1b protrudes from the long side side surfaces 10c and 10d. As described above, of the lead frame 1a and the lead frame 1b provided outside the housing 10, the portion exposed to the outside of the housing 10 is the lead terminal 11. Therefore, the lead terminal 11 and the lead frames 1a and 1b are integrally formed, and the thickness of the lead terminal 11 and the thickness of the lead frames 1a and 1b are the same. The lead terminal 11 is bent toward the upper surface 10a of the housing 10 so that the tip of the lead terminal 11 can be easily connected to the printed circuit board. The lead terminal 11 is electrically connected to an external electric circuit through a printed circuit board, and the IGBT 2, FwD3, and the control element 8 are energized from the external electric circuit via the lead terminal 11. As described above, the lead terminal 11 has a protruding portion 11a, an inclined portion 11b, a bent portion 11c, a twisted portion 11d, and a tip portion 11e.

Next, a method of manufacturing the semiconductor device 100 will be described.

FIG. 4 is a diagram showing a configuration of a lead frame at the time of manufacturing the semiconductor device according to the first embodiment of the present invention. FIG. 4A is a plan view showing a lead frame 20 at the time of manufacturing the semiconductor device 100. 4 (b) and 4 (c) are cross-sectional views of the lead terminal forming portion 21 in the broken line GG of FIG. 4 (a), and FIG. 4 (b) shows the lead terminal forming portion 21 being twisted. FIG. 4 (c) is a cross-sectional view of the lead terminal forming portion 21 after being twisted. The lead terminal forming portion 21 is a portion of the lead frame 20 that serves as the lead terminal 11 of the completed semiconductor device 100. Although the case where the lead frame 20 is made of copper will be described here, the case where the lead frame 20 is made of aluminum can also be manufactured by the same manufacturing method.

First, the lead frame 20 having the shape shown in FIG. 4 is formed. The lead frame 20 can be formed, for example, by punching a wide copper strip part by punching a desired shape using a mold. As shown in FIG. 4A, the lead frame 1a to which the IGBT 2 and FwD3 are bonded by punching the copper strip component by punching, the lead frame 1b to which the control element 8 is bonded, and the lead terminal 11 after processing. A lead frame 20 is formed in which the lead terminal forming portion 21 is connected to the tie bar 22 by a frame body portion 23.

The frame body portion 23 has a rectangular outer circumference and is made of an annular flat plate, and a lead terminal forming portion 21 is connected to the inner circumference of the frame body portion 23. The inclination angle θa of the inclined portion 11b of the lead terminal 11 of the completed semiconductor device 100 was formed in this punching process, and was inclined from a direction perpendicular to the outer peripheral side of the frame portion 23 as shown in FIG. A lead terminal forming portion 21 having an inclined region is formed. Immediately after the punching process, the cross-sectional shape of the lead terminal forming portion 21 is such that the thickness direction of the lead terminal forming portion 21 is the Z direction as shown in FIG. 4 (b).

After that, the lead frame 1a to which the IGBT 2 and the FwD3 are joined is bent in the Z direction as shown in FIG. 3 by press working using a die, and a twisted region 24 is formed in the lead terminal forming portion 21. .. The twisted region 24 is formed at the location of the broken line GG in FIG. 4A in a shape rotated by an angle θb with the center line of the lead terminal forming portion 21 as the rotation axis as shown in FIG. 4C. To. More specifically, the lead frame 20 is arranged so that the frame 23 is horizontal, and the lead terminal forming portion 21 and the lead terminal forming portion 21 are viewed from the side connected to the inner circumference of the frame 23. When the side with a small angle between the outer peripheral side of the frame portion 23 is located on the left side, the twisted region 24 is twisted clockwise at an angle θb, and the lead terminal forming portion 21 and the outer peripheral side of the frame portion 23 are twisted. When the side with a small angle between the sides is located on the right side, the twisted region 24 is twisted at an angle θb counterclockwise.

As described above, the press working die is formed so that the angle θb is + 30 ° or more and + 60 ° or less, or −60 ° or more and −30 ° or less. As described above, in the lead frame 20 of the semiconductor device 100 of the present invention, the twist angle of the twist region 24 provided in the lead terminal forming portion 21 is set on the frame body portion 23 of the lead frame 20 and the lead frames 1a and 1b. Since it is twisted at an inclined angle θb rather than perpendicular to it, the twisted region 24 can be formed by press working. That is, it can be formed by press working in which the step of processing the lead frame 1a of the lead frame 20 into a desired shape and the step of forming the twisted region 24 in the lead terminal forming portion 21 are performed at the same time, so that the manufacturing man-hours are increased. The semiconductor device 100 of the present invention can be manufactured without the above.

Next, silver plating is applied to the region where the IGBT 2 and FwD3 of the lead frame 1a are joined in order to improve the wettability of the solder. The silver plating may be performed before the bending of the lead frame 1a and the press working to form the twisted region 24, and the non-oxidizing metal film for improving the wettability of the solder is not limited to the silver plating. It may be formed by a method such as sputtering or vapor deposition.

Next, the semiconductor element is joined to the lead frame 20, sealed by the housing 10, the semiconductor element and the lead frame 20 are electrically connected by the wire 5, and the tie bar 22 and the frame body portion 23 are tie bar cut. To remove. FIG. 5 is a diagram showing a method of manufacturing a semiconductor device according to the first embodiment of the present invention. FIG. 5A is a diagram showing a step of bonding a semiconductor element to the lead frame 20, and FIG. 5B is a diagram showing a process of ultrasonically bonding the wire 5. Further, FIG. 5C is a diagram showing a process of sealing with the housing 10, and FIG. 5D is a diagram showing a process of tie-bar cutting the tie bar 22 and the frame body portion 23.

First, as shown in FIG. 5A, the IGBTs 2 and FwD3 are joined to the lead frame 1a of the lead frame 20 formed by the punching process and the press process shown in FIG. The IGBTs 2 and FwD3 are joined to the lead frame 1a by, for example, soldering. Further, the control element 8 for joining the control element 8 to the lead frame 1b of the lead frame 20 is joined by, for example, a conductive adhesive.

Next, as shown in FIG. 5B, the IGBT 2, FwD3, the control element 8, and the lead frames 1a and 1b are ultrasonically bonded to each other by using a wire 5 made of an aluminum wire or a gold (Au) wire. .. Next, the back surface of the lead frame 1a is placed on the heat sink 7 via an insulating layer 6 made of a thermosetting epoxy resin, and then the insulating layer 6 is cured by heating to separate the lead frame 1a and the heat sink 7. It is integrated via the insulating layer 6.

Next, as shown in FIG. 5C, the housing 10 is formed by a transfer mold. The state before sealing shown in FIG. 5B is covered with a mold, a thermosetting epoxy resin is injected into the mold, and then the epoxy resin is cured by heat treatment to form a housing 10. After that, as shown in FIG. 5D, the tie bar 22 of the lead frame 20 and the frame body portion 23 are cut in a tie bar cutting step. At this time, the lead terminal forming portion 21 is cut at a position where the shape of the cut surface is twisted at an angle θb as shown in FIG. 4C. After that, the lead terminal forming portion 21 is coated with solder by dipping or plating.

Next, a lead forming step of bending the lead terminal forming portion 21 is performed to form the lead terminal 11 having the shape shown in FIG.

FIG. 6 is a perspective view showing a lead forming step in the method for manufacturing a semiconductor device according to the first embodiment of the present invention. Further, FIG. 7 is a plan view showing a lead forming step in the method for manufacturing a semiconductor device according to the first embodiment of the present invention.

In lead forming, the housing 10 formed by the transfer mold protrudes from the side surface 10c or the side surface 10d which is connected to the rectangular upper surface 10a and the lower surface 10b and has a portion parallel to the long side of the upper surface 10a, and is the length of the upper surface 10a. A lead terminal forming portion 21 having an inclined region extending from a direction perpendicular to the side to an inclined direction and having a twisted region 24 in the inclined region is placed between a contact portion with the side surface 10c or the side surface 10d and the twisted region 24. Then, the lead terminal 11 is formed by bending in a direction perpendicular to the upper surface 10a.

As shown in FIG. 2, the lead terminal 11 is bent parallel to the width direction perpendicular to the stretching direction of the inclined portion 11b of the lead terminal 11. That is, as shown in FIG. 2, the long axis of the cross section of the bent portion 11c on the tip end side of the lead terminal 11 is formed so as to be perpendicular to the extending direction of the inclined portion 11b. Therefore, the lead forming has a protrusion having an end surface 25b parallel to the width direction perpendicular to the extending direction of the inclined portion 11b and a contact surface 25c parallel to the upper surface 10a of the housing 10 to which the lead terminal 11 is connected. A housing in which an upper jig 25 having a portion 25a, an end surface 26b parallel to the width direction perpendicular to the extending direction of the inclined portion 11b and parallel to the end surface 25b of the upper jig 25, and a lead terminal 11 are connected. A lower jig 26 having a protrusion 26a having a contact surface 26c parallel to the upper surface 10a of the 10 is used.

First, as shown in FIG. 6, the contact surface 25c provided on the protrusion 25a of the upper jig 25 is brought into contact with the inclined portion 11b of the lead terminal 11, and the contact surface 25c of the inclined portion 11b of the lead terminal 11 is brought into contact with the inclined portion 11b. The contact surface 26c provided on the protrusion 26a of the lower jig 26 is brought into contact with the back side of the side with which the lead terminal 11 is in contact, and the inclined portion 11b of the lead terminal 11 is brought into contact with the upper jig 25 and the lower jig 26. Sandwich with. At this time, as shown in FIG. 7, the end surface 25b of the upper jig 25 and the end surface 26b of the lower jig 26 are arranged at a predetermined distance in a plan view. This distance is larger than the thickness of the lead terminal 11, and is adjusted so that the curvature of the bent portion 11c does not become too small and is easily damaged after the lead terminal 11 is bent. The end face 25b of the upper jig 25 and the end face 26b of the lower jig 26 are arranged so as to be perpendicular to the stretching direction of the inclined portion 11b.

Next, as shown in FIG. 6, the lower jig 26 is moved in the direction in which the lead terminal 11 is bent. That is, the lower jig 26 is moved upward. As a result, the inclined portion 11b of the lead terminal 11 is bent upward to form the bent portion 11c, and the lead terminal 11 is bent substantially at a right angle to the inclined portion 11b. A twisted portion 11d twisted at an angle θb is already formed on the tip side of the lead terminal 11 with respect to the bent portion 11c, and the lead terminal 11 is twisted by bending 90 ° with respect to the inclined portion 11b at the bent portion 11c. The direction of the twist angle θb of the portion 11d is parallel to the upper surface 10a of the housing 10. Since the direction of the inclination angle θa of the inclined portion 11b is also parallel to the upper surface 10a of the housing 10, the tip end portion 11e of the lead terminal 11 is rotated at an angle of θa + θb. Therefore, by setting the angle θa and the angle θb so that θa + θb is 90 °, the tip portion 11e of the lead terminal 11 is rotated by 90 °, and the width direction of the tip portion 11e is set to the arrangement direction of the lead terminals 11. A semiconductor device 100 is manufactured in which the tip portions 11e are made vertical and the thickness direction of the tip portions 11e is parallel to the arrangement direction of the lead terminals 11, and the distance between the tip portions 11e of the plurality of arranged lead terminals 11 is widened.

Next, the effects of the semiconductor device 100 of the present invention will be described.

FIG. 8 is a diagram showing a state in which the semiconductor device according to the first embodiment of the present invention is mounted on a printed circuit board. FIG. 8A is a front view showing a state in which the semiconductor device 100 is mounted on the printed circuit board 12, and FIG. 8B is a rear view of a part of the printed circuit board 12 on which the semiconductor device 100 is mounted. It is a partial bottom view. Further, FIG. 8C is a cross-sectional view of the tip end portion 11e of the lead terminal 11. In FIG. 8, the printed circuit board 12 is, for example, the printed circuit board of the main conversion circuit of the power conversion device in which the semiconductor device 100 is used.

As shown in FIG. 8A, the lead terminal 11 of the semiconductor device 100 is a printed circuit board in which the tip portion 11e is inserted into a through hole formed in the printed circuit board 12 and integrally with the metal film formed in the through hole. It is soldered by the solder 14 to the land 13 made of a metal film also formed on the front surface and the back surface of the 12. As a result, the semiconductor device 100 is fixed to the printed circuit board 12 and electrically connected to the electric circuit provided on the printed circuit board 12 through the lead terminal 11.

As shown in FIG. 8B, the tip portion 11e of the lead terminal 11 is in a state of being rotated by approximately 90 ° due to the combination of the tilt angle θa of the tilt portion 11b and the twist angle θb of the twist portion 11d. The length of the lead terminals 11 having a rectangular cross section of the portion 11e in the arrangement direction can be made shorter than the length perpendicular to the arrangement direction. As a result, the distance between the tip portions 11e of the adjacent lead terminals 11 can be increased.

In a semiconductor device having a rated current exceeding, for example, 75 A, it is necessary to increase the cross-sectional area of the lead terminal in order to reduce Joule heat generation at the lead terminal when energized and to ensure good solderability. However, when the lead frame including the lead terminal is punched as described above, the punching width of the lead terminal may be larger than the thickness of the metal plate to be punched in order to obtain appropriate dimensional accuracy. Desirably, it is difficult to mass-produce lead frames having a lead terminal width of less than the plate thickness. Therefore, in the semiconductor device manufactured by punching, the length of the tip of the lead terminal in the width direction is longer than the length in the plate thickness direction.

On the other hand, in addition to punching, it is possible to manufacture lead frames by etching, but etching is a processing method based on a chemical reaction and is inferior in productivity to punching, so it is suitable for a small number of prototypes. However, it is not suitable for application to mass-produced products with a large quantity.

For this reason, in semiconductor devices having a large rated current, lead terminals having a longer length in the width direction by punching are used. The relationship between the cross-sectional area of the lead terminal and the rated current is preferably 50 A / mm ² or more in order to reduce the Joule loss of the lead terminal and prevent an excessive temperature rise, but if the cross-sectional area of the lead terminal is increased, , The width parallel to the arrangement direction of the lead terminals becomes wider. If the external size of the semiconductor device is not changed, the wider the lead terminal width, the narrower the lead terminal pitch and the narrower the distance between the lead terminal tips. Therefore, the soldered portion between the lead terminal tip and the printed circuit board. Soldering bridges are likely to occur, making it difficult to obtain sufficient reliability.

For example, when the cross section of the lead terminal is a square with a side of 0.7 mm, in order to suppress the occurrence of solder bridge, the distance between the center lines of the two adjacent lead terminals, that is, the pitch of the lead terminals is 2.5 mm or more. It is desirable that the distance between the lead terminals adjacent to each other is 1.8 mm or more. Therefore, when the width of the lead terminals in the arrangement direction exceeds 0.7 mm, the pitch of the lead terminals needs to be larger than 2.5 mm, and the appearance size of the semiconductor device must be increased. However, in the semiconductor device 100 of the present invention, since the tip portion 11e of the lead terminal 11 is rotated by 90 °, the plate thickness of the lead frame can be set to the width of the tip portion 11e in the arrangement direction, and the lead terminal can be used. The width of the tip portion 11e orthogonal to the plate thickness can be increased without increasing the pitch, and the lead terminal 11 having a sufficiently large cross-sectional area can be obtained without increasing the external size of the semiconductor device 100. ..

FIG. 9 is a diagram showing the relationship between the rotation angle of the tip of the lead terminal of the semiconductor device and the increasing spacing of the tip of the adjacent lead terminal in the first embodiment of the present invention. In FIG. 9, the rotation angle 90deg is determined by the sum of the inclination angle θa of the inclination portion 11b and the twist angle θb of the twist portion 11d at the tip end portion 11e of the lead terminal 11 as shown by the solid line in FIG. 8C. A state of being rotated by 90 ° in a direction parallel to the upper surface 10a of the housing 10 is shown. Further, for example, when the inclination angle θa of the inclined portion 11b is 0 ° and the twisting angle θb of the twisted portion 11d is also 0 °, the value on the horizontal axis in FIG. 9 is 0 deg. 9 shows, in FIG. 4C, the length Wa of the tip portion 11e of the lead terminal 11 in the width direction is 2.0 mm, the length Ta of the tip portion 11e in the thickness direction is 0.7 mm, and the adjacent lead terminals are adjacent to each other. When the pitch Db of 11 is 2.5 mm and the angle θc is changed from −60 ° to + 60 °, the shortest distance between the lead terminals 11 is −90 °, that is, the inclination angle θa is also The twist angle θb is also 0 °, and it shows how much the rotation angle of the tip portion 11e increases as compared with the case of 0 °. The shortest distance between the lead terminals 11 when the angle θc is 0 °, that is, when the tip portion 11e of the lead terminal 11 is rotated by 90 ° due to the inclination angle θa and the twist angle θb, is the distance Da in FIG. 4 (c). However, when the angle θc is not 0 °, the shortest distance between the lead terminals 11 is the distance Dc in FIG. 4 (c).

As shown in FIG. 9, when the rotation angle of the tip portion 11e of the lead terminal 11 is 90 ° (θc = 0 °), the distance between the tip portions 11e of the adjacent lead terminals 11 may be increased by 1.3 mm. The distance between the adjacent tip portions 11e can be maximized. This rotation angle of 90 ° can be realized by setting the total θa + θb of the tilt angle θa of the tilted portion 11b of the lead terminal 11 and the twisting angle θb of the twisted portion 11d to 90 °. The inclination angle θa and the twist angle θb are both preferably 45 °, but if the inclination angle θa is 30 ° to 60 °, the twist angle θb is 30 ° to 60 °, and θa + θb is 90 °. Good. The angle referred to here may be an absolute value and may be a positive angle or a negative angle, but the signs of the angle θa and the angle θb are the same.

Further, as shown in FIG. 9, when the rotation angle of the tip portion 11e of the lead terminal 11 is 60 ° to 120 ° (θc = −30 ° to + 30 °), the tip portion 11e of the adjacent lead terminal 11 The spacing can be increased by 0.96 mm or more. This corresponds to 74% or more of 1.3 mm when the rotation angle of the tip portion 11e of the lead terminal 11 is 90 °. Further, when the rotation angle of the tip portion 11e of the lead terminal 11 is 75 ° to 105 ° (θc = −15 ° to + 15 °), the distance between the tip portions 11e of the adjacent lead terminals 11 is increased by 1.2 mm or more. can do. This corresponds to 93% or more of 1.3 mm when the rotation angle of the tip portion 11e of the lead terminal 11 is 90 °. That is, if the absolute value of θa + θb, which is the sum of the inclination angle θa of the inclined portion 11b and the twist angle θb of the twisted portion 11d, is 60 ° or more and 120 ° or less, the effect of increasing the distance between the tips of the adjacent lead terminals. Is preferable because the absolute value of θa + θb is 75 ° or more and 105 ° or less, and it is more preferable because the same effect as when the absolute value of θa + θb is 90 ° can be obtained. ..

As described above, the rotation angle of the tip portion 11e of the lead terminal 11 is most preferably 90 °, but the error of the bending angle of the bending portion 11c and the error of the twisting angle θb of the twisted portion 11d are the tilt angles of the inclined portion 11b. It is more likely to occur during manufacturing or handling than the error of θa, and the rotation angle of the tip portion 11e may deviate from 90 °. However, as shown in FIG. 9, if the deviation θc of the rotation angle based on the case where the rotation angle of the tip portion 11e is 90 ° is −15 ° or more and + 15 ° or less, the rotation of the tip portion 11e is substantially. Since the same effect as when the angle is 90 ° can be obtained, even if the manufacturing method or the handling method causes a slight error in the bending angle of the bending portion 11c or the twisting angle θb of the twisted portion 11d, the adjacent leads can be obtained. Since a semiconductor device capable of sufficiently increasing the distance between the tip portions 11e of the terminals 11 can be manufactured, the manufacturing cost can be reduced.

FIG. 10 is a diagram showing a method of soldering a lead terminal of a semiconductor device according to the first embodiment of the present invention to a printed circuit board. FIG. 10 shows a state in which the tip portion 11e of the lead terminal 11 is inserted into the through hole of the printed circuit board 12, and the land 13 and the tip portion 11e provided in the through hole are soldered by flow soldering. Is.

As shown in FIG. 10, when the printed circuit board 12 in which the tip end portion 11e of the lead terminal 11 of the semiconductor device is inserted into the through hole is conveyed to the upper part of the jet soldering device 17, the jet soldering device 17 is transferred to the printed circuit board 12. Move to the side, that is, upward. The molten solder 16 heated to a high temperature is ejected from the jet soldering apparatus 17, and the molten solder 16 comes into contact with the tip portion 11e of the lead terminal 11 and the land 13 of the printed circuit board 12. As a result, the tip portion 11e and the land 13 are heated, and the molten solder 16 gets wet with the tip portion 11e and the land 13, so that the tip portion 11e of the lead terminal 11 and the land 13 of the printed circuit board 12 are soldered.

As shown in FIG. 10, when soldering is performed using the jet soldering apparatus 17, a solder bridge 15 made of molten solder 16 may be formed between the tip portions 11e of adjacent lead terminals 11. If the distance da between adjacent lead terminals is narrow, the solder bridge 15 may solidify as it is and remain as a defect short-circuiting between the lead terminals 11 in the subsequent cooling.

In the semiconductor device 100 of the present invention, the tip portion 11e of the lead terminal 11 is rotated so that the thickness direction of the tip portion 11e is the arrangement direction of the lead terminals 11, so that the adjacent lead terminals 11 are adjacent to each other. The distance da of the tip portion 11e can be sufficiently widened. When the distance da of the tip portion 11e is sufficiently wide, the force acts in the direction of separating the solder bridge 15 due to the gravity applied to the solder bridge 15 and the wetting force of the lead terminal 11 on the tip portion 11e, so that the solder bridge 15 is separated. The formed molten solder is separated, and the solder bridge 15 disappears. As a result, at the solder joint portion on the back surface of the printed circuit board 12, the land 13 provided in the through hole and the tip end portion 11e of the lead terminal 11 are solder-bonded by the solder 14.

That is, even in a semiconductor device in which the lead terminals 11 are provided at a pitch at which solder bridges can occur unless the tip portion 11e of the lead terminals 11 is rotated, the lead terminals are as described in the present embodiment. By rotating the tip portion 11e of 11 by 90 °, the occurrence of a solder bridge can be prevented. Further, even if the rotation angle of the tip portion 11e of the lead terminal 11 is not 90 °, by setting the rotation angle to 90 ° ± 15 °, the occurrence of a solder bridge is prevented as in the case where the rotation angle is 90 °. can do. Further, even if the rotation angle is 90 ° ± 30 °, the effect of preventing the occurrence of the solder bridge can be obtained.

Then, in the semiconductor device 100 of the present invention, the tip end portion 11e of the lead terminal 11 is rotated by 90 ° in parallel with the upper surface 10a of the housing 10, which is the inclination angle θa of the inclined portion 11b and the twisted portion 11d. It is realized by the sum of the twist angle θb. Therefore, by setting the absolute value of the inclination angle θa to 30 ° or more and 60 ° or less, the tip portion 11e can be rotated by 90 ° even if the absolute value of the twist angle θb is 30 ° or more and 60 ° or less. As a result, since the twist angle of the lead terminal can be made smaller than that of the semiconductor device described in Patent Document 1, it is possible to suppress a decrease in the mechanical strength of the lead terminal.

Further, in the semiconductor device 100 of the present invention, the twist angle θb of the twisted portion 11d of the lead terminal 11 is smaller than that of the semiconductor device described in Patent Document 1, so that the length of the twisted portion 11d can be shortened. The tip portion 11e of the lead terminal 11 needs a predetermined length because it is inserted into the through hole of the printed circuit board and soldered. Therefore, if the length of the twisted portion 11d on the tip side of the lead terminal 11 is longer than that of the bent portion 11c, the length of the entire lead terminal 11 becomes longer, and the area of the metal plate required to form the lead frame is large. Therefore, the material cost increases. However, in the semiconductor device 100 of the present invention, since the absolute value of the twist angle θb of the twisted portion 11d of the lead terminal 11 is 30 ° or more and 60 ° or less and small, the length of the twisted portion 11d can be shortened. It is possible to suppress the increase in material cost and save resources.

When the twist angle θb of the twisted portion 11d of the lead terminal 11 is small, the decrease in mechanical strength can be suppressed and the length of the twisted portion 11d can be shortened. However, when the twist angle θb is reduced, the inclined portion 11b It is necessary to increase the inclination angle θa. When the distance between the protruding portions 11a of the lead terminals 11 is the same, if the inclination angle θa of the inclined portion 11b is increased, the distance between the adjacent inclined portions 11b becomes smaller. Therefore, if the inclination angle θa is made too large, the withstand voltage of insulation between the adjacent lead terminals 11 decreases. Therefore, the inclination angle θa and the twist angle θb should be designed in consideration of the withstand voltage of the lead terminal 11 and the mechanical strength, and if the absolute values of the inclination angle θa and the twist angle θb are both 45 °. , It is preferable because it can achieve both insulation withstand voltage and mechanical strength.

In the semiconductor device 100 of the present invention, the lead terminal 11 includes a protruding portion 11a that protrudes from the long side side surfaces 10c and 10d of the housing 10 in a direction perpendicular to the long side of the upper surface 10a. 11a does not necessarily have to be provided. That is, the portion of the lead terminal protruding from the side surface of the housing may extend in a direction inclined with respect to the long side or the short side of the upper surface of the housing at a predetermined inclination angle θa. That is, to explain with reference to FIGS. 1 and 2, the lead terminal 11 may not have a protruding portion 11a, and the inclined portion 11b may be in contact with the long side side surfaces 10c and 10d of the housing 10.

However, as described in the first embodiment, the lead terminal 11 of the semiconductor device 100 projects from the long side side surfaces 10c and 10d of the housing 10 in a direction perpendicular to the long side of the upper surface 10a. Since it is possible to widen the distance between the lead terminals 11 at the portions that come into contact with the long side side surfaces 10c and 10d, the creeping discharge that discharges between the lead terminals 11 along the long side side surfaces 10c and 10d. It is preferable because the withstand voltage of the above can be improved. Further, it is preferable to provide the protruding portion 11a because the lead terminal 11 can be easily pressed by the upper jig 25 at the time of lead forming shown in FIGS. 6 and 7.

Further, according to the semiconductor device 100 of the present invention, even if the width in the direction perpendicular to the plate thickness of the tip portion 11e of the lead terminal 11 is formed to be wide, the tip portion 11e is rotated by 90 ° to form the plate of the lead terminal 11. Since the thickness direction and the arrangement direction of the lead terminals 11 are parallel to each other, the distance between the tip portions 11e of the adjacent lead terminals 11 can be increased. Therefore, the surface area of the tip portion 11e is increased to increase the amount of heat input to the lead terminal 11 at the time of solder joining, and while preventing soldering failure due to insufficient temperature rise of the lead terminal 11, solder bridge failure is prevented. be able to. As a result, it is possible to obtain a semiconductor device that can handle a large current, has high reliability of the soldered portion, and has high mechanical strength of the lead terminal.

For example, in the semiconductor device 100 of the present invention, even if the cross section of the lead terminal 11 is 2 mm in width and 0.7 mm in thickness, the tip portion 11e is rotated by 90 ° and mounted on the printed circuit board. The distance between the lead terminals 11 can be 2.8 times or more the cross-sectional area of the lead terminals 11 while making the distance between the lead terminals the same as that of a semiconductor device having a width of 0.7 mm and a thickness of 0.7 mm. Therefore, in the semiconductor device 100 of the present invention, since the cross-sectional area of the lead terminal 11 can be easily increased, the electrical resistance of the lead terminal 11 can be significantly reduced to easily reduce the Joule loss.

Further, a metal plate having a width longer than the thickness has low rigidity against an external force in the thickness direction and is easily deformed when an external force in the thickness direction is applied. However, in the semiconductor device 100 of the present invention, FIGS. 1 and 2 As shown in the above, since the thickness direction of the lead terminal 11 at the portion extending from the bent portion 11c to the tip portion 11e of the lead terminal 11 is different from the direction perpendicular to the arrangement direction of the lead terminals 11, the lead Even if an external force is applied from the direction perpendicular to the arrangement direction of the terminals 11, the lead terminals 11 are less likely to be deformed. That is, when the semiconductor device 100 is mounted on the printed circuit board, the lead terminals 11 are not easily deformed even if an external force is applied so as to sandwich the lead terminals 11 provided on the long side side surfaces 10c and 10d of the housing 10. Therefore, it is possible to prevent a defective insertion position of the printed circuit board into the through hole due to deformation of the lead terminal 11, and it is possible to improve the reliability of the power conversion device provided with the semiconductor device of the present invention.

FIG. 11 is a plan view showing the appearance of the lead frame used in the semiconductor device according to the first embodiment of the present invention and the lead frame used in the semiconductor device of the comparative example after molding. FIG. 11A shows a lead frame 20a used in the semiconductor device of the present invention, in which the lead terminal forming portion 21 serving as a lead terminal is inclined from a direction perpendicular to the outer peripheral side of the frame body portion 23. It has a stretched inclined region. FIG. 11B shows a lead frame 20b used in a semiconductor device of a comparative example, in which a lead terminal forming portion 21 serving as a lead terminal extends in a direction perpendicular to the outer peripheral side of the frame body portion 23. .. The lead frame 20a of the semiconductor device 100 of the present invention shown in FIG. 11A and the lead frame 20b of the semiconductor device of the comparative example shown in FIG. 11B have the same length of the lead terminal forming portion 21. ing.

As shown in FIG. 11, the distance between the housing 10 provided with the lead terminal forming portion 21 and the frame body portion 23 is the distance La in the lead frame 20a used in the semiconductor device 100 of the present invention, and is compared. In the lead frame 20b used in the semiconductor device of the example, the distance is Lb. The distance La and the distance Lb are such that the length of the lead terminal forming portion 21 is L, and the length of the lead terminal forming portion 21 is between the extending direction of the lead terminal forming portion 21 and the direction perpendicular to the outer peripheral side of the side to which the lead terminal forming portion 21 is connected. If the angle is θa, it is represented by L · cos θa. In the lead frame 20b used in the semiconductor device of the comparative example, θa = 0 °, so Lb = L. However, in the lead frame 20a used in the semiconductor device 100 of the present invention, θa is not 0 °. When cosθa <1, the relationship of La <Lb is established. That is, in the lead frame 20a used in the semiconductor device 100 of the present invention, the distance La of the portion where the lead terminal forming portion 21 is provided can be made shorter than the lead frame 20b used in the semiconductor device of the comparative example. The width of the lead frame in the direction perpendicular to the arrangement direction of the lead terminal forming portions 21 can be reduced.

Since the lead frame 20a used in the semiconductor device 100 of the present invention can reduce the width of the lead frame in the direction perpendicular to the arrangement direction of the lead terminal forming portions 21, the metal plate required for forming the lead frame can be reduced. The area of the material can be reduced and the material cost can be reduced. Further, by increasing the number of lead frames taken per metal plate, it is possible to shorten the transport time per lead frame in the lead frame manufacturing process, so that the processing cost of the lead frame can be reduced.

FIG. 12 is a plan view showing an external view of the lead frame according to the first embodiment of the present invention at the time of manufacture. The lead frame 20 shown in FIG. 12 is a lead frame for four units of the semiconductor device 100 of the present invention, and the frame body portions 23a to 23d are connected to each other.

Since the lead frame used in the semiconductor device 100 of the present invention is manufactured by punching a copper strip component as described above, it is manufactured in a state where a plurality of lead frames are connected as shown in FIG. That is, like the lead frame 20 used in the semiconductor device 100 of the present invention, the lead terminal forming portion 21 is tilted to reduce the width of the lead frame in the direction perpendicular to the arrangement direction of the lead terminal forming portions 21. Since the number of lead frames that can be punched by one die can be increased, the manufacturing cost can be reduced.

Further, in the manufacturing process of the semiconductor device, the semiconductor device is separated into individual pieces by tie bar cutting after sealing with the housing 10. Therefore, in the manufacturing process of the semiconductor device up to the tie bar cut, the lead frames for a plurality of units are transported in a connected state. Since there is a limit to the size of the lead frame that can be applied to the semiconductor device manufacturing device, by applying the present invention, the number of semiconductor devices that can be taken per lead frame can be increased, and the number of semiconductor devices that can be taken per semiconductor device can be increased. Since the time can be shortened, the manufacturing cost can be reduced.

Although the structure in which the lead frames for four semiconductor devices are vertically connected has been described here, the structure may be connected in the horizontal direction or in a matrix, and the size of the lead frame required for the semiconductor device. The same effect can be obtained by forming a structure in which an appropriate number of units are connected according to the above.

Embodiment 2.
FIG. 13 is a plan view showing the semiconductor device according to the second embodiment of the present invention. In FIG. 13, those having the same reference numerals as those in FIG. 1 indicate the same or corresponding configurations, and the description thereof will be omitted. Further, in the second embodiment of the present invention, the parts different from the first embodiment of the present invention will be described, and the same or corresponding parts are as described in the first embodiment, and the description thereof will be omitted. The configuration in which the first lead terminal 11p and the second lead terminal 11q are provided along two opposite sides of the upper surface 10a of the housing 10 is different from the first embodiment of the present invention.

As shown in FIG. 13, the semiconductor device 200 of the second embodiment has a rectangular parallelepiped housing 10 like the semiconductor device 100 of the first embodiment, and the housing 10 has an upper surface 10a, a lower surface 10b, and a length. Side sides 10c and 10d and short side sides 10e and 10f are provided. The long side connected to the long side side surface 10c of the upper surface 10a and the long side connected to the long side side surface 10d are parallel and opposed to each other. The first lead terminals 11p project from the long side side surface 10c, and a plurality of first lead terminals 11p are arranged along the long side of the upper surface 10a connected to the long side side surface 10c. Further, a second lead terminal 11q protrudes from the long side side surface 10d, and a plurality of second lead terminals 11q are arranged along the long side of the upper surface 10a connected to the long side side surface 10d.

As shown in FIG. 13, the inclination directions of the first lead terminal 11p and the second lead terminal 11q are opposite to each other. That is, in FIG. 13, the extending direction of the inclined portion of the first lead terminal 11p is inclined in the counterclockwise direction from the direction perpendicular to the long side of the upper surface 10a, but the inclination of the second lead terminal 11q. The stretching direction of the portion is inclined in the clockwise direction from the direction perpendicular to the long side of the upper surface 10a.

Further, the twisted portion of the first lead terminal 11p is twisted in a direction in which the extending direction of the inclined portion of the first lead terminal 11p is inclined from the direction perpendicular to the long side of the upper surface 10a, and the second lead is twisted. The twisted portion of the terminal 11q is twisted in a direction in which the extending direction of the inclined portion of the second lead terminal 11q is inclined from the direction perpendicular to the long side of the upper surface 10a. That is, in the plan view of FIG. 13, the twisted portion of the first lead terminal 11p is twisted in the counterclockwise direction, and the twisted portion of the second lead terminal 11q is twisted in the clockwise direction. There is. That is, the twisted direction of the twisted portion of the first lead terminal 11p is opposite to the twisted direction of the twisted portion of the second lead terminal 11q.

The semiconductor device 200 of the second embodiment of the present invention has the same effect as the semiconductor device 100 described in the first embodiment, but further with respect to an external force from a direction inclined from a direction perpendicular to the arrangement direction of the lead terminals. Has the effect of being hard to deform.

In the semiconductor device 100 of the first embodiment of the present invention shown in FIG. 1, the inclined portion of the lead terminal 11 protruding from the long side side surface 10c of the housing 10 is flat from the direction perpendicular to the long side of the upper surface 10a. The inclined portion of the lead terminal 11 which is inclined in the clockwise direction in the visual direction and protrudes from the long side side surface 10d of the housing 10 is also in the clockwise direction in the plan view from the direction perpendicular to the long side of the upper surface 10a. It is inclined to. That is, the lead terminal 11 protruding from the long side side surface 10c and the lead terminal 11 protruding from the long side side surface 10d have inclined portions inclined in the same direction. As a result, the thickness direction of the cross section of the bent portion of the lead terminal 11 is also the same direction between the lead terminal 11 protruding from the long side side surface 10c and the lead terminal 11 protruding from the long side side surface 10d. The lead terminal 11 is easily deformed with respect to an external force in the thickness direction of the bent portion, that is, in the extending direction of the inclined portion of the lead terminal 11. In FIG. 1A, the lead terminal 11 is easily deformed by a force from the lower left of the paper surface toward the upper right of the paper surface or a force in the opposite direction.

On the other hand, in the semiconductor device 200 of the second embodiment, as shown in FIG. 13, the extending direction of the inclined portion of the first lead terminal 11p protruding from the long side side surface 10c and the long side side surface 10d Since the extending direction of the inclined portion of the second lead terminal 11q protruding from the above is different, the second lead terminal 11q is unlikely to be deformed even if an external force is applied from the extending direction of the inclined portion of the first lead terminal 11p. Therefore, as a result, the first lead terminal 11p is also hard to be deformed, and even if an external force is applied from the extending direction of the inclined portion of the second lead terminal 11q, the first lead terminal 11p is hard to be deformed. The lead terminal 11q of 2 is also hard to be deformed.

As described above, the semiconductor device 200 according to the second embodiment of the present invention has an external force from a direction perpendicular to the arrangement direction of the first lead terminal 11p and the second lead terminal 11q as described in the first embodiment. In addition, the lead terminal is deformed because it is not easily deformed by external forces from the extending direction of the inclined portion of the first lead terminal 11p and the extending direction of the inclined portion of the second lead terminal 11q. There is no specific direction that is easy to do, it is possible to further suppress the deformation of the lead terminal, prevent the insertion position deviation of the printed circuit board into the through hole due to the deformation of the lead terminal, and prevent the power supply provided with the semiconductor device of the present invention. The reliability of the conversion device can be further improved.

Embodiment 3.
FIG. 14 is a block diagram showing the configuration of the power conversion system according to the third embodiment of the present invention. The power conversion system of FIG. 14 is a power conversion system using the power conversion device 110 provided with the semiconductor device 100 described in the first embodiment, but the power conversion device used in the power conversion system is the semiconductor device 100. Instead, it may be a power conversion device including the semiconductor device 200 described in the second embodiment.

In the third embodiment, a three-phase inverter will be described as a power conversion device to which the semiconductor device of the present invention is applied, but the power conversion device to which the semiconductor device of the present invention is applied is limited to the three-phase inverter. Instead, it may be a single-phase inverter or another power conversion device such as a DC / DC converter such as a boost converter or a step-down converter.

The power conversion system shown in FIG. 14 includes a power supply 120, a power conversion device 110, and a load 130. The power source 120 is a DC power source, and supplies DC power to the power conversion device 110. The power supply 120 can be configured with various things, for example, it can be configured with a DC system, a solar cell, a storage battery, or it can be configured with a rectifier circuit or an AC / DC converter connected to an AC system. May be good. Further, the power supply 120 may be configured by a DC / DC converter that converts the DC power output from the DC system into a predetermined power.

The power conversion device 110 is a three-phase inverter connected between the power supply 120 and the load 130, converts the DC power supplied from the power supply 120 into AC power, and supplies AC power to the load 130. As shown in FIG. 14, the power conversion device 110 converts DC power into AC power and outputs the main conversion circuit 111, and a control circuit 112 that outputs a control signal for controlling the main conversion circuit 111 to the main conversion circuit 111. And have.

The load 130 is a three-phase electric motor driven by AC power supplied from the power converter 110. The load 130 is not limited to a specific application, and may be an electric motor mounted on various electric devices. For example, the load 130 is used for a hybrid electric vehicle, an electric vehicle, a railroad vehicle, an elevator, or an air conditioner. It may be an electric motor.

The details of the power conversion device 110 will be described below. The main conversion circuit 111 includes the semiconductor device 100 of the present invention, the semiconductor device 100 includes the IGBT 2 and the FwD3 as described in the first embodiment, and the power conversion device 110 is switched by the IGBT 2. As a result, the DC power supplied from the power supply 120 is converted into three-phase AC power and supplied to the load 130. Although there are various specific circuit configurations of the main conversion circuit 111, the main conversion circuit 111 according to the third embodiment is a two-level three-phase full bridge circuit, and is a housing 10 of the semiconductor device 100. It can be composed of six IGBTs 2 provided inside and six FwD3s antiparalleled to each IGBT 2. The six IGBTs 2 are connected in series to each of the two IGBTs 2 to form an upper and lower arm, and each upper and lower arm constitutes each phase (U phase, V phase, W phase) of the full bridge circuit. Then, the output terminals of the upper and lower arms, that is, the three output terminals of the main conversion circuit 111 are connected to the load 130.

As described in the first embodiment, the semiconductor device 100 includes a control element 8 as a drive circuit for driving each IGBT 2, but the semiconductor device may be a semiconductor device having no built-in drive circuit. In that case, the main conversion circuit 111 may include a drive circuit. The drive circuit generates a drive signal for driving the IGBT 2 in the semiconductor device 100 provided in the main conversion circuit 111, and supplies the drive signal to the gate electrode of the IGBT 2 of the semiconductor device 100. Specifically, according to the control signal from the control circuit 112 described later, a drive signal for turning on the IGBT 2 and a drive signal for turning on the IGBT 2 are output to the gate electrode of each IGBT 2. When the IGBT 2 is kept in the on state, the drive signal is a voltage signal (on signal) equal to or higher than the threshold voltage of the IGBT 2, and when the IGBT 2 is kept in the off state, the drive signal is a voltage signal (off signal) equal to or lower than the threshold voltage of the IGBT 2. ).

The control circuit 112 controls the IGBT 2 in the semiconductor device 100 of the main conversion circuit 111 so that the desired power is supplied to the load 130. Specifically, the time (on time) at which each IGBT 2 of the main conversion circuit 111 should be in the on state is calculated based on the power to be supplied to the load 130. For example, the main conversion circuit 111 can be controlled by PWM control that modulates the ON time of the IGBT 2 according to the voltage to be output. Then, a control command (control signal) is output to the drive circuit provided in the main conversion circuit 111 so that an on signal is output to the IGBT 2 that should be turned on at each time point and an off signal is output to the IGBT 2 that should be turned off. To do. The drive circuit outputs an on signal or an off signal as a drive signal to the gate electrode of each IGBT 2 according to this control signal.

Next, the configuration of the mounting portion of the main conversion circuit 111 of the power conversion device 110 and the semiconductor device 100 of the present invention will be described in more detail.

FIG. 15 is an external view showing a configuration in which a semiconductor device is mounted on a printed circuit board of the power conversion device according to the third embodiment of the present invention. FIG. 15A is a front view in which the semiconductor device 100 is mounted on the printed circuit board 12 of the main conversion circuit 111 of the power conversion device 110, and FIG. 15D is the printed circuit board 12 of the main conversion circuit 111 of the power conversion device 110. It is a partial bottom view which saw a part of the state which mounted the semiconductor device 100 from the back surface side. FIG. 15 corresponds to FIG. 8 described in the first embodiment, and those having the same reference numerals as those in FIG. 8 show the same or corresponding configurations, and the description thereof will be omitted.

As shown in FIG. 15, in the printed circuit board 12 of the main conversion circuit 111 of the power conversion device 110, the shape of the through hole into which the tip end 11e of the lead terminal 11 of the semiconductor device 100 is inserted is the housing 10 of the semiconductor device 100. The width in the Y direction in the direction perpendicular to the long side of the upper surface 10a is longer than the width in the X direction in the direction perpendicular to the width in the Y direction. Then, as described in the first embodiment, in the semiconductor device 100, at the tip end portion 11e of the lead terminal 11, the width direction of the lead terminal 11 is the upper surface 10a in the direction perpendicular to the long side of the upper surface 10a of the housing 10. Since the thickness direction of the lead terminal 11 is oriented in the direction parallel to the long side of the lead terminal 11, the lead terminal 11 has a longer width in the direction perpendicular to the long side of the upper surface 10a shown in FIG. 15 (b). The tip portion 11e can be inserted. As a result, in the power conversion device 110 of the third embodiment of the present invention, the distance between the adjacent lands 13 of the printed circuit board 12 on which the semiconductor device 100 is mounted is increased.

A high voltage such as 600V or 1200V may be applied from the power supply 120 connected to the power conversion device 110. Dielectric breakdown due to discharge generated by a high voltage is more likely to occur in creepage discharge generated along a surface than in space discharge discharged in space. In the power conversion device 110 of the present invention, the shape of the through hole of the printed circuit board 12 into which the lead terminal 11 of the semiconductor device 100 is inserted has a configuration in which the width parallel to the arrangement direction of the lead terminals 11 is shorter than the width perpendicular to the arrangement direction. Therefore, the distance between the lands 13 of the adjacent through holes can be increased, the creepage discharge between the lands 13 is less likely to occur, and the insulation withstand voltage can be improved.

The printed circuit board has an index called tracking resistance, which indicates the voltage at which creeping discharge occurs, and the printed circuit board having excellent tracking resistance is expensive, which causes an increase in the material cost of the product. However, the power conversion device 110 of the present invention can increase the spacing between the lands 13 of the through holes formed on the printed circuit board 12 by mounting the semiconductor device 100 of the present invention, so that the printed circuit board can be inexpensive. Even if there is, the voltage at which creeping discharge occurs can be increased, so that the material cost of the product can be reduced.

The power conversion device to which the semiconductor device of the present invention is applied is not limited to the case where the above-mentioned load is an electric motor, and is, for example, an electric discharge machine, a laser machine, an induction heating cooker, or a non-contact power supply. It can be used as a power supply device for a system, and can also be used as a power conditioner for a photovoltaic power generation system, a power storage system, or the like. Further, although the case where the semiconductor device used in the power conversion device includes the IGBT as the switching element has been described, the power conversion device may be configured by using the semiconductor device provided with the MOSFET as the switching element.

10 housing, 10a upper surface, 10b lower surface, 10c, 10d long side side surface 11 lead terminal, 11a protruding part, 11b inclined part, 11c bent part, 11d twisted part, 11e tip part, 11p first lead terminal, 11qth 2 lead terminals 12 printed circuit boards, 13 lands, 14 solders, 15 solder bridges 20 lead frames, 21 lead terminal forming parts, 23 frame parts, 24 twisted regions 100, 200 semiconductor devices 110 electrolytic corrosion conversion devices, 111 main conversion circuits , 112 control circuit

Claims (11)

The first main surface having a first side, the second main surface provided on the back side of the first main surface, and the first main surface connected to the first main surface and the second main surface. A housing having a side surface having a portion parallel to one side,
A lead terminal that protrudes from the side surface and whose width in the direction parallel to the first main surface at the contact portion with the side surface is longer than the thickness in the direction perpendicular to the width.
With
The lead terminal is
An inclined portion extending in a direction inclined from a direction perpendicular to the first side, and an inclined portion.
A bent portion connected to the inclined portion, bent in a direction perpendicular to the first main surface, and extended in a direction perpendicular to the first main surface, and a bent portion.
A twisted portion connected to the bent portion and twisted in a direction in which the inclined portion is inclined from a direction perpendicular to the first side.
The tip connected to the twisted part and
Semiconductor device equipped with. The semiconductor device according to claim 1, wherein the lead terminal further includes a protruding portion extending in a direction perpendicular to the first side between the side surface and the inclined portion. The first main surface has a second side parallel to the first side.
A plurality of the lead terminals project from the side surface,
The plurality of lead terminals are provided along a first lead terminal provided along the first side and along the second side, and the bent portion is provided in the same direction as the first lead terminal. The semiconductor device according to claim 1 or 2, further comprising a bent second lead terminal. The semiconductor device according to claim 3, wherein the first lead terminal and the second lead terminal are inclined in directions opposite to each other from a direction in which the inclined portion is inclined from a direction perpendicular to the first side. The angle between the direction perpendicular to the first side and the extending direction of the inclined portion is 30 ° or more and 60 ° or less, and the angle at which the twisted portion is twisted is 30 ° or more and 60 ° or less. The semiconductor device according to any one of claims 1 to 4. The semiconductor device according to claim 5, wherein the angle between the direction perpendicular to the first side and the width direction of the tip portion is 30 ° or less. A main conversion circuit having the semiconductor device according to any one of claims 1 to 6 and converting and outputting input power.
A power conversion device including a control circuit that outputs a control signal for controlling the main conversion circuit to the main conversion circuit. The power conversion device includes a substrate having a through hole into which the tip of the lead terminal of the semiconductor device is inserted.
The through hole has a first width in a direction perpendicular to the first side of the first main surface of the housing of the semiconductor device, and a second width in a direction perpendicular to the first width. The power conversion device according to claim 7, which has a longer distance. A frame body made of an annular flat plate having a rectangular outer circumference,
A lead terminal forming portion having an inclined region extending in a direction inclined from a direction perpendicular to the outer peripheral side of the frame body portion and connected to the inner circumference of the frame body portion.
Equipped with a,
A lead frame having a twisted region formed in the lead terminal forming portion in a shape rotated around the center line of the lead terminal forming portion as a rotation axis . A frame body made of an annular flat plate having a rectangular outer circumference,
A lead terminal forming portion having an inclined region extending in a direction inclined from a direction perpendicular to the outer peripheral side of the frame body portion and connected to the inner circumference of the frame body portion.
With
In the lead terminal forming portion, the lead terminal forming portion and the frame body portion are viewed from the side in which the frame body portion is arranged horizontally and the lead terminal forming portion is connected to the inner circumference of the frame body portion. When the side having a small angle between the outer circumference and the side of the outer circumference is located on the left side, the twisted region is twisted clockwise, and when the side is located on the right side, the twisted region twisted counterclockwise is the inclined region. Ruri over de frames Yusuke to. The first main surface, the second main surface provided on the back side of the first main surface, and the first main surface and the second main surface are connected to each other and connected to the first main surface. It has an inclined region that protrudes from the side surface of the housing having a side surface and extends from a direction perpendicular to the side to an inclined direction, and a twisted region in which a part of the inclined region is twisted. Lead terminal forming part,
A method for manufacturing a semiconductor device, which forms a lead terminal by bending between the side surface and the twisted region in a direction perpendicular to the first main surface.

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