JP6785426B2 - 半導体封止成形用仮保護フィルム、仮保護フィルム付きリードフレーム、仮保護フィルム付き封止成形体、及び半導体装置を製造する方法 - Google Patents
半導体封止成形用仮保護フィルム、仮保護フィルム付きリードフレーム、仮保護フィルム付き封止成形体、及び半導体装置を製造する方法 Download PDFInfo
- Publication number
- JP6785426B2 JP6785426B2 JP2020506399A JP2020506399A JP6785426B2 JP 6785426 B2 JP6785426 B2 JP 6785426B2 JP 2020506399 A JP2020506399 A JP 2020506399A JP 2020506399 A JP2020506399 A JP 2020506399A JP 6785426 B2 JP6785426 B2 JP 6785426B2
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- temporary protective
- adhesive layer
- lead frame
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000001681 protective effect Effects 0.000 title claims description 217
- 238000007789 sealing Methods 0.000 title claims description 161
- 239000004065 semiconductor Substances 0.000 title claims description 145
- 238000000034 method Methods 0.000 title claims description 57
- 238000000465 moulding Methods 0.000 title claims description 53
- 238000005538 encapsulation Methods 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000012790 adhesive layer Substances 0.000 claims description 261
- 239000010410 layer Substances 0.000 claims description 95
- 229920005989 resin Polymers 0.000 claims description 72
- 239000011347 resin Substances 0.000 claims description 72
- 125000003118 aryl group Chemical group 0.000 claims description 54
- 125000004432 carbon atom Chemical group C* 0.000 claims description 31
- 230000009477 glass transition Effects 0.000 claims description 31
- 229920001721 polyimide Polymers 0.000 claims description 29
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 24
- 238000004806 packaging method and process Methods 0.000 claims description 21
- -1 polyethylene naphthalate Polymers 0.000 claims description 15
- 238000004804 winding Methods 0.000 claims description 15
- 125000001033 ether group Chemical group 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 12
- 229920005992 thermoplastic resin Polymers 0.000 claims description 10
- 239000004962 Polyamide-imide Substances 0.000 claims description 6
- 229920002312 polyamide-imide Polymers 0.000 claims description 6
- 125000003368 amide group Chemical group 0.000 claims description 5
- 125000004185 ester group Chemical group 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- 125000005462 imide group Chemical group 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 125000003545 alkoxy group Chemical group 0.000 claims description 4
- 239000004760 aramid Substances 0.000 claims description 4
- 229920003235 aromatic polyamide Polymers 0.000 claims description 4
- 125000001174 sulfone group Chemical group 0.000 claims description 4
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229920001643 poly(ether ketone) Polymers 0.000 claims description 3
- 229920002492 poly(sulfone) Polymers 0.000 claims description 3
- 229920006393 polyether sulfone Polymers 0.000 claims description 3
- 229920002530 polyetherether ketone Polymers 0.000 claims description 3
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 3
- 239000004695 Polyether sulfone Substances 0.000 claims description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 2
- 229920001230 polyarylate Polymers 0.000 claims description 2
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 2
- 229920006254 polymer film Polymers 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 description 62
- 239000002966 varnish Substances 0.000 description 48
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 42
- 230000000052 comparative effect Effects 0.000 description 25
- 239000000853 adhesive Substances 0.000 description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 21
- 230000001070 adhesive effect Effects 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 21
- 238000000576 coating method Methods 0.000 description 21
- 239000010949 copper Substances 0.000 description 19
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 18
- 239000003566 sealing material Substances 0.000 description 18
- 230000004580 weight loss Effects 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 17
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- 229920000642 polymer Polymers 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 12
- 229910001369 Brass Inorganic materials 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 9
- 150000004984 aromatic diamines Chemical class 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 229910052763 palladium Inorganic materials 0.000 description 9
- 229920002614 Polyether block amide Polymers 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- 239000000945 filler Substances 0.000 description 7
- 238000011282 treatment Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- 230000008602 contraction Effects 0.000 description 6
- 239000007822 coupling agent Substances 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229920001601 polyetherimide Polymers 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000004697 Polyetherimide Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 150000003949 imides Chemical class 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- NJMOHBDCGXJLNJ-UHFFFAOYSA-N trimellitic anhydride chloride Chemical compound ClC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 NJMOHBDCGXJLNJ-UHFFFAOYSA-N 0.000 description 4
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000004843 novolac epoxy resin Substances 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 3
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 2
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 2
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 2
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- CJPIDIRJSIUWRJ-UHFFFAOYSA-N benzene-1,2,4-tricarbonyl chloride Chemical compound ClC(=O)C1=CC=C(C(Cl)=O)C(C(Cl)=O)=C1 CJPIDIRJSIUWRJ-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000004508 fractional distillation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 2
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003192 poly(bis maleimide) Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000005060 rubber Substances 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 2
- 125000003944 tolyl group Chemical group 0.000 description 2
- FRGPKMWIYVTFIQ-UHFFFAOYSA-N triethoxy(3-isocyanatopropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN=C=O FRGPKMWIYVTFIQ-UHFFFAOYSA-N 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- LSKMQQMADJNOEQ-UHFFFAOYSA-N 1-butyl-3-(3-trimethoxysilylpropyl)urea Chemical compound CCCCNC(=O)NCCC[Si](OC)(OC)OC LSKMQQMADJNOEQ-UHFFFAOYSA-N 0.000 description 1
- DDVHXESTWHRORE-UHFFFAOYSA-N 1-ethyl-3-(3-triethoxysilylpropyl)urea Chemical compound CCNC(=O)NCCC[Si](OCC)(OCC)OCC DDVHXESTWHRORE-UHFFFAOYSA-N 0.000 description 1
- QAPOUVVDXSFHMI-UHFFFAOYSA-N 1-ethyl-3-(3-trimethoxysilylpropyl)urea Chemical compound C(C)NC(=O)NCCC[Si](OC)(OC)OC QAPOUVVDXSFHMI-UHFFFAOYSA-N 0.000 description 1
- JRHNUZCXXOTJCA-UHFFFAOYSA-N 1-fluoropropane Chemical group CCCF JRHNUZCXXOTJCA-UHFFFAOYSA-N 0.000 description 1
- LSHPXZZVOVHEHU-UHFFFAOYSA-N 1-hexyl-3-(3-triethoxysilylpropyl)urea Chemical compound CCCCCCNC(=O)NCCC[Si](OCC)(OCC)OCC LSHPXZZVOVHEHU-UHFFFAOYSA-N 0.000 description 1
- YZICVIODSLDGKB-UHFFFAOYSA-N 1-methyl-3-(3-triethoxysilylpropyl)urea Chemical compound CCO[Si](OCC)(OCC)CCCNC(=O)NC YZICVIODSLDGKB-UHFFFAOYSA-N 0.000 description 1
- WMYZVAOCXGGIFQ-UHFFFAOYSA-N 1-methyl-3-(3-trimethoxysilylpropyl)urea Chemical compound CNC(=O)NCCC[Si](OC)(OC)OC WMYZVAOCXGGIFQ-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- JKMGAOANNOLAMZ-UHFFFAOYSA-N 1-phenyl-3-(3-triethoxysilylpropyl)urea Chemical compound CCO[Si](OCC)(OCC)CCCNC(=O)NC1=CC=CC=C1 JKMGAOANNOLAMZ-UHFFFAOYSA-N 0.000 description 1
- UZPJWDCUVZBIKU-UHFFFAOYSA-N 1-phenyl-3-(3-trimethoxysilylpropyl)urea Chemical compound CO[Si](OC)(OC)CCCNC(=O)NC1=CC=CC=C1 UZPJWDCUVZBIKU-UHFFFAOYSA-N 0.000 description 1
- ZDNHRKZFTZTTMD-UHFFFAOYSA-N 1-phenyl-3-triethoxysilylpropan-1-amine Chemical compound CCO[Si](OCC)(OCC)CCC(N)C1=CC=CC=C1 ZDNHRKZFTZTTMD-UHFFFAOYSA-N 0.000 description 1
- MMSFJRXKYJJXSB-UHFFFAOYSA-N 1-propyl-3-(3-triethoxysilylpropyl)urea Chemical compound CCCNC(=O)NCCC[Si](OCC)(OCC)OCC MMSFJRXKYJJXSB-UHFFFAOYSA-N 0.000 description 1
- LHNIVPIYYGZZNZ-UHFFFAOYSA-N 1-propyl-3-(3-trimethoxysilylpropyl)urea Chemical compound CCCNC(=O)NCCC[Si](OC)(OC)OC LHNIVPIYYGZZNZ-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- SMDGQEQWSSYZKX-UHFFFAOYSA-N 3-(2,3-dicarboxyphenoxy)phthalic acid Chemical compound OC(=O)C1=CC=CC(OC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O SMDGQEQWSSYZKX-UHFFFAOYSA-N 0.000 description 1
- GPXCORHXFPYJEH-UHFFFAOYSA-N 3-[[3-aminopropyl(dimethyl)silyl]oxy-dimethylsilyl]propan-1-amine Chemical compound NCCC[Si](C)(C)O[Si](C)(C)CCCN GPXCORHXFPYJEH-UHFFFAOYSA-N 0.000 description 1
- HXLAEGYMDGUSBD-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(OCC)CCCN HXLAEGYMDGUSBD-UHFFFAOYSA-N 0.000 description 1
- VKRWVLAGVUOYLB-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propylurea Chemical compound CCO[Si](C)(OCC)CCCNC(N)=O VKRWVLAGVUOYLB-UHFFFAOYSA-N 0.000 description 1
- ZYAASQNKCWTPKI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propan-1-amine Chemical compound CO[Si](C)(OC)CCCN ZYAASQNKCWTPKI-UHFFFAOYSA-N 0.000 description 1
- MXDWUGFTSGOHRF-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propylurea Chemical compound CO[Si](C)(OC)CCCNC(N)=O MXDWUGFTSGOHRF-UHFFFAOYSA-N 0.000 description 1
- FMGBDYLOANULLW-UHFFFAOYSA-N 3-isocyanatopropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCN=C=O FMGBDYLOANULLW-UHFFFAOYSA-N 0.000 description 1
- NNTRMVRTACZZIO-UHFFFAOYSA-N 3-isocyanatopropyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)CCCN=C=O NNTRMVRTACZZIO-UHFFFAOYSA-N 0.000 description 1
- LVACOMKKELLCHJ-UHFFFAOYSA-N 3-trimethoxysilylpropylurea Chemical compound CO[Si](OC)(OC)CCCNC(N)=O LVACOMKKELLCHJ-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- AJYDKROUZBIMLE-UHFFFAOYSA-N 4-[2-[2-[2-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=CC=C(OC=2C=CC(N)=CC=2)C=1C(C)(C)C1=CC=CC=C1OC1=CC=C(N)C=C1 AJYDKROUZBIMLE-UHFFFAOYSA-N 0.000 description 1
- LDFYRFKAYFZVNH-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenoxy]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 LDFYRFKAYFZVNH-UHFFFAOYSA-N 0.000 description 1
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 1
- KZTROCYBPMKGAW-UHFFFAOYSA-N 4-[[4-amino-3,5-di(propan-2-yl)phenyl]methyl]-2,6-di(propan-2-yl)aniline Chemical compound CC(C)C1=C(N)C(C(C)C)=CC(CC=2C=C(C(N)=C(C(C)C)C=2)C(C)C)=C1 KZTROCYBPMKGAW-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- SDLZVUPJVSPCAQ-UHFFFAOYSA-N C(CCCCC)NC(NCCC[Si](OC)(OC)OC)=O Chemical compound C(CCCCC)NC(NCCC[Si](OC)(OC)OC)=O SDLZVUPJVSPCAQ-UHFFFAOYSA-N 0.000 description 1
- RLOADIRYGUVMTE-UHFFFAOYSA-N C1(=CC=CC=C1)NCCNCCC[Si](OC)(OC)C Chemical compound C1(=CC=CC=C1)NCCNCCC[Si](OC)(OC)C RLOADIRYGUVMTE-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- FDQSRULYDNDXQB-UHFFFAOYSA-N benzene-1,3-dicarbonyl chloride Chemical compound ClC(=O)C1=CC=CC(C(Cl)=O)=C1 FDQSRULYDNDXQB-UHFFFAOYSA-N 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 229940043279 diisopropylamine Drugs 0.000 description 1
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Substances CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 1
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 1
- QFTYSVGGYOXFRQ-UHFFFAOYSA-N dodecane-1,12-diamine Chemical compound NCCCCCCCCCCCCN QFTYSVGGYOXFRQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- ACXIAEKDVUJRSK-UHFFFAOYSA-N methyl(silyloxy)silane Chemical compound C[SiH2]O[SiH3] ACXIAEKDVUJRSK-UHFFFAOYSA-N 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- INJVFBCDVXYHGQ-UHFFFAOYSA-N n'-(3-triethoxysilylpropyl)ethane-1,2-diamine Chemical compound CCO[Si](OCC)(OCC)CCCNCCN INJVFBCDVXYHGQ-UHFFFAOYSA-N 0.000 description 1
- YLBPOJLDZXHVRR-UHFFFAOYSA-N n'-[3-[diethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CCO[Si](C)(OCC)CCCNCCN YLBPOJLDZXHVRR-UHFFFAOYSA-N 0.000 description 1
- QVLDAVMRWCBMAG-UHFFFAOYSA-N n'-phenyl-n-(3-triethoxysilylpropyl)ethane-1,2-diamine Chemical compound CCO[Si](OCC)(OCC)CCCNCCNC1=CC=CC=C1 QVLDAVMRWCBMAG-UHFFFAOYSA-N 0.000 description 1
- BAHJULPZRJEKKO-UHFFFAOYSA-N n'-phenyl-n-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCNC1=CC=CC=C1 BAHJULPZRJEKKO-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- NQKOSCFDFJKWOX-UHFFFAOYSA-N n-[3-[diethoxy(methyl)silyl]propyl]aniline Chemical compound CCO[Si](C)(OCC)CCCNC1=CC=CC=C1 NQKOSCFDFJKWOX-UHFFFAOYSA-N 0.000 description 1
- YZPARGTXKUIJLJ-UHFFFAOYSA-N n-[3-[dimethoxy(methyl)silyl]propyl]aniline Chemical compound CO[Si](C)(OC)CCCNC1=CC=CC=C1 YZPARGTXKUIJLJ-UHFFFAOYSA-N 0.000 description 1
- PSIDVLNBMQXBFV-UHFFFAOYSA-N n-ethyl-3-triethoxysilylpropan-1-amine Chemical compound CCNCCC[Si](OCC)(OCC)OCC PSIDVLNBMQXBFV-UHFFFAOYSA-N 0.000 description 1
- FYZBRYMWONGDHC-UHFFFAOYSA-N n-ethyl-3-trimethoxysilylpropan-1-amine Chemical compound CCNCCC[Si](OC)(OC)OC FYZBRYMWONGDHC-UHFFFAOYSA-N 0.000 description 1
- HQRYYWOFQFROCJ-UHFFFAOYSA-N n-ethyl-n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CCNCCNCCC[Si](OC)(OC)OC HQRYYWOFQFROCJ-UHFFFAOYSA-N 0.000 description 1
- DVYVMJLSUSGYMH-UHFFFAOYSA-N n-methyl-3-trimethoxysilylpropan-1-amine Chemical compound CNCCC[Si](OC)(OC)OC DVYVMJLSUSGYMH-UHFFFAOYSA-N 0.000 description 1
- VUJWCNPJRNLUCF-UHFFFAOYSA-N n-methyl-n'-(3-triethoxysilylpropyl)ethane-1,2-diamine Chemical compound CCO[Si](OCC)(OCC)CCCNCCNC VUJWCNPJRNLUCF-UHFFFAOYSA-N 0.000 description 1
- PGYBGJMNJXCWKW-UHFFFAOYSA-N n-methyl-n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CNCCNCCC[Si](OC)(OC)OC PGYBGJMNJXCWKW-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000005498 phthalate group Chemical class 0.000 description 1
- 150000003022 phthalic acids Chemical class 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920003055 poly(ester-imide) Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- LXEJRKJRKIFVNY-UHFFFAOYSA-N terephthaloyl chloride Chemical compound ClC(=O)C1=CC=C(C(Cl)=O)C=C1 LXEJRKJRKIFVNY-UHFFFAOYSA-N 0.000 description 1
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 150000003628 tricarboxylic acids Chemical class 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65H—HANDLING THIN OR FILAMENTARY MATERIAL, e.g. SHEETS, WEBS, CABLES
- B65H75/00—Storing webs, tapes, or filamentary material, e.g. on reels
- B65H75/02—Cores, formers, supports, or holders for coiled, wound, or folded material, e.g. reels, spindles, bobbins, cop tubes, cans, mandrels or chucks
- B65H75/04—Kinds or types
- B65H75/08—Kinds or types of circular or polygonal cross-section
- B65H75/14—Kinds or types of circular or polygonal cross-section with two end flanges
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/12—Unsaturated polyimide precursors
- C08G73/121—Preparatory processes from unsaturated precursors and polyamines
- C08G73/122—Preparatory processes from unsaturated precursors and polyamines containing chain terminating or branching agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
- C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
- C09J201/02—Adhesives based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49586—Insulating layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/0025—Crosslinking or vulcanising agents; including accelerators
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/544—Silicon-containing compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2471/00—Presence of polyether
- C09J2471/006—Presence of polyether in the substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2477/00—Presence of polyamide
- C09J2477/006—Presence of polyamide in the substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2479/00—Presence of polyamine or polyimide
- C09J2479/08—Presence of polyamine or polyimide polyimide
- C09J2479/086—Presence of polyamine or polyimide polyimide in the substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2481/00—Presence of sulfur containing polymers
- C09J2481/006—Presence of sulfur containing polymers in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45664—Palladium (Pd) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83862—Heat curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
- H01L2224/84815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Storage Of Web-Like Or Filamentary Materials (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
Description
(2)ダイパッドの仮保護フィルムとは反対側の面上に半導体素子を搭載(接着)する工程、
(3)半導体素子とインナーリードとを接続するワイヤを設ける工程、
(4)半導体素子及びワイヤを封止する封止層を形成して、リードフレーム、半導体素子及び封止層を有する封止成形体を得る工程、
(5)封止成形体から仮保護フィルムを剥離する工程。
図1は、一実施形態に係る仮保護フィルムを示す断面図である。図1に示す仮保護フィルム10は、支持フィルム1と、支持フィルム1の片面上に設けられた接着層2と、から構成される。支持フィルム1の両面上に接着層が形成されていてもよい。図2も、一実施形態に係る仮保護フィルムを示す断面図である。図2の仮保護フィルム10’は、支持フィルム1と、支持フィルム1の一方の主面上に設けられた接着層2と、支持フィルム1の他方の主面上に設けられた、実質的に接着性を有しない樹脂層(非接着層3)とを有する。これらの仮保護フィルムは、リードフレームに搭載された半導体素子を封止する封止層を形成する封止成形の工程において、リードフレームの裏面(半導体素子が搭載される面とは反対側の面)に貼り付けることで、リードフレームを封止成形の間、仮保護するための半導体封止成形用仮保護フィルムとして用いることができる。
接着層は、樹脂を含有する。接着層の形成に用いられる樹脂(以下、「樹脂(a)」ともいう。)は、アミド基(−NHCO−)、エステル基(―CO−O−)、イミド基(−NR2、ただしRはそれぞれ−CO−である)、エーテル基(−O−)又はスルホン基(−SO2−)を有する熱可塑性樹脂であってよい。樹脂(a)は、アミド基、エステル基、イミド基又はエーテル基を有する熱可塑性樹脂であってよい。樹脂(a)の具体例としては、芳香族ポリアミド、芳香族ポリエステル、芳香族ポリイミド、芳香族ポリアミドイミド、芳香族ポリエーテル、芳香族ポリエーテルアミドイミド、芳香族ポリエーテルアミド、芳香族ポリエステルイミド及び芳香族ポリエーテルイミドが挙げられる。耐熱性及び接着性の点から、樹脂(a)は、芳香族ポリエーテルアミドイミド、芳香族ポリエーテルイミド及び芳香族ポリエーテルアミドからなる群より選択される少なくとも1種である。
支持フィルムは、特に制限されないが、接着層又は非接着層の形成に用いられる樹脂の塗工、乾燥、半導体装置組立工程中の熱に耐えられる樹脂(耐熱性樹脂)からなるフィルムであってよい。支持フィルムは、例えば、芳香族ポリイミド、芳香族ポリアミド、芳香族ポリアミドイミド、芳香族ポリスルホン、芳香族ポリエーテルスルホン、ポリフェニレンスルフィド、芳香族ポリエーテルケトン、ポリアリレート、芳香族ポリエーテルエーテルケトン及びポリエチレンナフタレートよりなる群から選ばれる少なくとも1種のポリマーのフィルムであってよい。
非接着層は、リードフレームに対する接着性(又は感圧接着性)を0〜270℃において実質的に有しない樹脂層である。非接着層は、高温で軟化しにくい樹脂層であってよく、例えば、高いガラス転移温度を有する樹脂層が、非接着層として機能することができる。
一実施形態に係る仮保護フィルムは、例えば、以下の方法により製造することができる。まず、樹脂(a)と、N−メチル−2−ピロリドン、ジメチルアセトアミド、ジエチレングリコールジメチルエーテル、テトラヒドロフラン、シクロヘキサノン、メチルエチルケトン、ジメチルホルムアミド等の溶剤と、必要に応じて、シランカップリング剤等の他の成分と、を混合し、樹脂(a)又はその前駆体を含む接着層形成用のワニスを作製する。作製した接着層形成用のワニスを支持フィルムの片面又は両面上に塗布した後、加熱処理により塗膜から溶剤を除去して、支持フィルムの片面又は両面上に接着層を形成する。これにより、二層構造又は三層構造の仮保護フィルムを得ることができる。また、樹脂(a)の代わりに、ワニス塗布後の加熱処理等によって、溶剤が除去されると共に、樹脂(a)(例えばポリイミド樹脂)となる樹脂(a)の前駆体(例えばポリイミド樹脂)を用いてもよい。塗工面の表面状態等の点から、樹脂(a)を含むワニスを用いてよい。
一実施形態に係る仮保護フィルムを用いた半導体素子の封止成形工程を含む方法によって、半導体装置を製造することができる。製造される半導体装置は、例えば、リードフレーム及びこれに搭載された半導体素子と、リードフレームの半導体素子側で半導体素子を封止する封止層とを有し、リードフレームの裏面が外部接続用に露出している、Non Lead Type Packageであってもよい。その具体例としては、QFN(QuadFlat Non−leaded Package)、SON(Small Outline Non−leaded Package)が挙げられる。
製造例1
(樹脂の合成)
温度計、攪拌機、窒素導入管及び分留塔をとりつけた5000mlの4つ口フラスコに窒素雰囲気下、2,2−ビス[−(4−アミノフェノキシ)フェニル]プロパン270.9g(0.66モル)、1,3−ビス(3−アミノプロピル)−テトラメチルジシロキサン8.7g(0.035モル)を入れ、これをN−メチル−2−ピロリドン(NMP)1950gに溶解した。さらにこの溶液を0℃に冷却し、この温度で無水トリメリット酸クロライド149.5g(0.71モル)を添加した。無水トリメリット酸クロライドが溶解した後、トリエチルアミン100gを添加した。室温で2時間攪拌を続けた後、180℃に昇温して5時間の反応によりイミド化を完結させた。反応液をメタノール中に投入して重合体を単離した。これを乾燥した後、N−メチル−2−ピロリドンに溶解しメタノール中に投入して再度重合体を単離した。単離した重合体を減圧乾燥して精製された粉末状のポリエーテルアミドイミドを得た。これをポリエーテルアミドイミドAとした。
ポリエーテルアミドイミドA22g、及びN−(2−アミノエチル)−3−アミノプロピルトリメトキシシラン(信越化学工業株式会社製、商品名:KBM603)2.2gをNMP78gに溶解し、接着層形成用のワニス1Aを作製した。
(樹脂の合成)
攪拌機、温度計、窒素ガス導入管及び冷却管を備えた1000ml四つ口フラスコに窒素雰囲気下、1,3−ビス(3−アミノフェノキシ)ベンゼンを120.9g(0.41モル)、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサンを44.0g(0.18モル)、これをNMP538.3gに添加し、均一に溶解した。さらにこの溶液を0℃まで冷却し、この温度で無水トリメリット酸クロリドを125.0g(0.59モル)加え、室温(25℃)で1時間攪拌した。反応溶液にトリエチルアミンを72.6g加えて室温(25℃)で1時間攪拌した後、180℃で6時間攪拌した。得られた反応液を水中に投入して重合体を単離した。これを乾燥した後、NMPに溶解し水中に投入して再度重合体を単離した。単離した重合体を減圧乾燥して精製された粉末状のポリエーテルアミドイミドを得た。これをポリエーテルアミドイミドBとした。
ポリエーテルアミドイミドB22g、及び3−アミノプロピルトリメトキシシラン(信越化学工業株式会社製、商品名:KBM903)2.2gをNMP78gに溶解し、接着層形成用のワニス2Aを作製した。
(樹脂の合成)
攪拌機、温度計、窒素ガス導入管及び冷却管を備えた5000ml四つ口フラスコに窒素雰囲気下、1,3−ビス(3−アミノフェノキシ)ベンゼン253.3g(0.81モル)と1,3−ビス(3−アミノプロピル)−テトラメチルジシロキサン8.7g(0.035モル)を入れ、これをNMP1500gに溶解した。さらにこの溶液を0℃に冷却し、この温度で無水トリメリット酸クロライド239.7g(1.14モル)を添加した。室温で1時間攪拌を続けた後、180℃に昇温して5時間の反応によりイミド化を完結させた。反応液をメタノール中に投入して重合体を単離した。これを乾燥した後、N−メチル−2−ピロリドンに溶解しメタノール中に投入して再度重合体を単離した。単離した重合体を減圧乾燥して精製された粉末状のポリエーテルアミドイミドを得た。これをポリエーテルアミドイミドCとした。
ポリエーテルアミドイミドC22g、及び3−ウレイドプロピルトリエトキシシラン(50%メタノール溶液)(信越化学工業株式会社製、商品名:KBE585)6.6gをNMP78gに溶解し、接着層形成用のワニス3Aを作製した。
製造例4
温度計、攪拌機、窒素導入管及び分留塔をとりつけた5リットルの4つ口フラスコに窒素雰囲気下、2,2−ビス[4−(4−アミノフェノキシ)フェニル]プロパン172.4g(0.42モル)、4,4’−メチレンビス(2,6−ジイソプロピルアニリン)153.7g(0.42モル)を入れ、これをNMP1550gに溶解した。さらにこの溶液を0℃に冷却し、この温度で無水トリメリット酸クロライド174.7g(0.83モル)を添加した。無水トリメリット酸クロライドが溶解した後、トリエチルアミン130gを添加した。室温(25℃)で2時間攪拌を続けた後、180℃に昇温して5時間の反応によりイミド化を完結させた。反応液を水中に投入して重合体を単離した。これを乾燥した後、NMPに溶解し水中に投入して再度重合体を単離した。単離した重合体を減圧乾燥して精製された粉末状のポリアミドイミドを得た。
実施例1
厚さ50μmの表面に化学処理を施したポリイミドフィルム(宇部興産株式会社製 ユーピレックスSGA)を支持フィルムとして用いた。このポリイミドフィルムの片面上に、接着層形成用のワニス2Aを30μmの厚さに塗布した。塗膜を100℃で10分、及び300℃で10分間加熱することによって乾燥して、支持フィルムの片面上に厚さ6μmの接着層を形成し、実施例1の仮保護フィルムを得た。
厚さ25μmの表面に化学処理を施したポリイミドフィルム(宇部興産株式会社製 ユーピレックスSGA)を支持フィルムとして用いた。このポリイミドフィルムの片面上に、樹脂ワニス1Aを15μmの厚さに塗布した。塗膜を100℃で10分、及び300℃で10分間加熱することによって乾燥して、支持フィルムの片面上に厚さ3μmの接着層を形成し、実施例2の仮保護フィルムを作製した。
支持フィルムとして、厚さ25μmのポリイミドフィルム(東レ・デュポン株式会社製、商品名:カプトンEN、20〜200℃における線膨張係数が1.5×10−5/℃、200℃で60分間加熱されたときの加熱収縮率が0.02%)を用いた。このポリイミドフィルムの片面上に、接着剤形成用のワニス3Aを25μmの厚さに塗布した。塗膜を100℃で10分、及び300℃で10分間加熱することによって乾燥して、支持フィルムの片面上に厚さ5μmの接着層を形成し、実施例3の仮保護フィルムを得た。
支持フィルムとして、厚さ50μmのポリイミドフィルム(東レ・デュポン株式会社製、商品名:カプトンEN、20〜200℃における線膨張係数が1.5×10−5/℃、200℃で60分間加熱されたときの加熱収縮率が0.02%)を用いた。このポリイミドフィルムの片面上に、接着層形成用のワニス1Bを50μmの厚さに塗布した。塗膜を100℃で10分、300℃で10分間加熱することによって乾燥して、支持フィルムの片面上に厚さ8μmの接着層を形成し、二層構造の仮保護フィルムを得た。
支持フィルムとして、厚さ25μmのポリイミドフィルム(東レ・デュポン株式会社製、商品名:カプトンEN、20〜200℃における線膨張係数が1.5×10−5/℃、200℃で60分間加熱されたときの加熱収縮率が0.02%)を用いた。このポリイミドフィルムの片面上に、接着層形成用のワニス2Bを15μmの厚さに塗布した。塗膜を100℃で10分、300℃で10分間加熱することによって乾燥して、支持フィルムの片面上に厚さ3μmの接着層を形成し、2層構造の仮保護フィルムを得た。
支持フィルムとして、厚さ25μmのポリイミドフィルム(東レ・デュポン株式会社製、商品名:カプトンEN、20〜200℃における線膨張係数が1.5×10−5/℃、200℃で60分間加熱されたときの加熱収縮率が0.02%)を用いた。このポリイミドフィルムの片面上に、接着層形成用のワニス3Bを10μmの厚さに塗布した。塗膜を100℃で10分、300℃で10分間加熱することによって乾燥して、支持フィルムの片面上に厚さ2μmの接着層を形成し、実施例6の仮保護フィルムを得た。
支持フィルムとして、厚さ25μmのポリイミドフィルム(東レ・デュポン株式会社製、商品名:カプトンEN、20〜200℃における線膨張係数が1.5×10−5/℃、200℃で60分間加熱されたときの加熱収縮率が0.02%)を用いた。このポリイミドフィルムの片面上に、接着層形成用のワニス1Dを5μmの厚さに塗布した。塗膜を100℃で10分、180℃で10分間加熱することによって乾燥して、支持フィルムの片面上に厚さ1μmの接着層を形成し、実施例7の仮保護フィルムを得た。
支持フィルムとして、厚さ50μmのポリイミドフィルム(東レ・デュポン株式会社製、商品名:カプトンEN、20〜200℃における線膨張係数が1.5×10−5/℃、200℃で60分間加熱されたときの加熱収縮率が0.02%)を用いた。このポリイミドフィルムの片面上に、接着層形成用のワニス1Cを100μmの厚さに塗布した。塗膜を100℃で10分、300℃で10分間加熱することによって乾燥して、支持フィルムの片面上に厚さ20μmの接着層を形成し、図1の構成の、比較例1の仮保護フィルムを得た。
支持フィルムとして、厚さ25μmの表面に化学処理を施したポリイミドフィルム(宇部興産株式会社製 ユーピレックスSGA)を用いた。このポリイミドフィルムの片面上に、接着層形成用のワニス2Cを50μmの厚さに塗布した。塗膜を100℃で10分、300℃で10分間加熱することによって乾燥して、支持フィルムの片面上に厚さ10μmの接着層を形成し、図1の構成の、比較例2の仮保護フィルムを得た。
支持フィルムとして、化学処理が施された表面を有する厚さ25μmのポリイミドフィルム(東レ・デュポン株式会社製、商品名:カプトンEN、20〜200℃における線膨張係数が1.5×10−5/℃、200℃で60分間加熱されたときの加熱収縮率が0.02%)を用いた。このポリイミドフィルムの片面上に、接着層形成用のワニス2Dを25μmの厚さに塗布した。塗膜を100℃で10分、300℃で10分間加熱することによって乾燥して、支持フィルムの片面上に厚さ10μmの接着層を形成し、図1の構成の、比較例3の仮保護フィルムを得た。
Claims (21)
- リードフレームに搭載された半導体素子を封止する封止層を形成する封止成形の間、前記リードフレームを仮保護するための半導体封止成形用仮保護フィルムであって、
支持フィルムと、前記支持フィルムの片面又は両面上に設けられ、樹脂を含有する接着層と、を備え、
前記仮保護フィルムを、ダイパッド及びインナーリードを有するリードフレームに、前記接着層が前記リードフレームに接するように貼り付けたときの前記接着層と前記リードフレームとの間の90度ピール強度が、25℃において5N/m以上であり、
前記仮保護フィルムを、前記リードフレームに、前記接着層が前記リードフレームに接するように貼り付け、前記ダイパッドの前記仮保護フィルムとは反対側の面上に半導体素子を搭載し、続いて前記半導体素子、前記リードフレーム及び前記仮保護フィルムを400℃で1〜5分間加熱してから、前記接着層と接しながら前記半導体素子を封止する封止層を形成したときに、前記接着層と前記リードフレーム及び前記封止層との間の90度ピール強度が、180℃において600N/m以下である、半導体封止成形用仮保護フィルム。 - 前記接着層の200℃における弾性率が1MPa以上である、請求項1に記載の半導体封止成形用仮保護フィルム。
- 前記接着層の厚さが1〜20μmである請求項1又は2に記載の半導体封止成形用仮保護フィルム。
- 前記接着層がシランカップリング剤を更に含有し、
前記シランカップリング剤の含有量が、前記樹脂全量に対して、5質量%超35質量%以下である、請求項1〜3のいずれか一項に記載の半導体封止成形用仮保護フィルム。 - 前記接着層のガラス転移温度が100〜300℃である、請求項1〜5のいずれか一項に記載の半導体封止成形用仮保護フィルム。
- 前記樹脂がアミド基、エステル基、イミド基、エーテル基又はスルホン基を有する熱可塑性樹脂である、請求項1〜6のいずれか一項に記載の半導体封止成形用仮保護フィルム。
- 前記支持フィルムの厚さに対する前記接着層の厚さの比が0.5以下である、請求項1〜7のいずれか一項に記載の半導体封止成形用仮保護フィルム。
- 前記支持フィルムが、芳香族ポリイミド、芳香族ポリアミド、芳香族ポリアミドイミド、芳香族ポリスルホン、芳香族ポリエーテルスルホン、ポリフェニレンスルフィド、芳香族ポリエーテルケトン、ポリアリレート、芳香族ポリエーテルエーテルケトン及びポリエチレンナフタレートよりなる群から選ばれるポリマーのフィルムである、請求項1〜8のいずれか一項に記載の半導体封止成形用仮保護フィルム。
- 前記支持フィルムのガラス転移温度が、200℃以上である、請求項1〜9のいずれか一項に記載の半導体封止成形用仮保護フィルム。
- 前記支持フィルムの厚さが、5〜100μmである、請求項1〜10のいずれか一項に記載の半導体封止成形用仮保護フィルム。
- 前記支持フィルムの20〜200℃における線膨張係数が3.0×10−5以下である、請求項1〜11のいずれか一項に記載の半導体封止成形用仮保護フィルム。
- 前記支持フィルムの、200℃で60分間加熱されたときの収縮率が0.15%以下である、請求項1〜12のいずれか一項に記載の半導体封止成形用仮保護フィルム。
- 前記支持フィルムの片面上に前記接着層が設けられており、
当該仮保護フィルムが、前記支持フィルムの前記接着層が設けられた面とは反対側の面上に設けられた非接着層をさらに備える、請求項1〜13のいずれか一項に記載の半導体封止成形用仮保護フィルム。 - 巻芯と、前記巻芯に巻き取られた請求項1〜14のいずれか一項に記載の半導体封止成形用仮保護フィルムと、を備える、リール体。
- 請求項15に記載のリール体と、前記リール体を収容した包装袋と、を備える、包装体。
- 請求項16に記載の包装体と、前記包装体を収容した梱包箱と、備える、梱包物。
- ダイパッド及びインナーリードを有するリードフレームと、
請求項1〜14のいずれか一項に記載の半導体封止成形用仮保護フィルムと、
を備え、
前記仮保護フィルムが、その接着層が前記リードフレームの片面に接するように前記リードフレームに貼り付けられている、仮保護フィルム付きリードフレーム。 - ダイパッド及びインナーリードを有するリードフレームと、
前記ダイパッドに搭載された半導体素子と、
前記半導体素子と前記インナーリードとを接続するワイヤと、
前記半導体素子及び前記ワイヤを封止している封止層と、
請求項1〜14のいずれか一項に記載の半導体封止成形用仮保護フィルムと、
を備え、
前記仮保護フィルムが、その接着層が前記リードフレームの前記半導体素子が搭載されている面とは反対側の面に貼り付けられている、仮保護フィルム付き封止成形体。 - ダイパッド及びインナーリードを有するリードフレームの片面に、請求項1〜14のいずれか一項に記載の半導体封止成形用仮保護フィルムを、その接着層が前記リードフレームに接する向きで貼り付ける工程と、
前記ダイパッドの前記仮保護フィルムとは反対側の面上に半導体素子を搭載する工程と、
前記半導体素子と前記インナーリードとを接続するワイヤを設ける工程と、
前記半導体素子及び前記ワイヤを封止する封止層を形成して、前記リードフレーム、前記半導体素子及び前記封止層を有する封止成形体を得る工程と、
前記封止成形体から前記仮保護フィルムを剥離する工程と、
をこの順に備える、半導体装置を製造する方法。 - 前記リードフレームが複数の前記ダイパッドを有し、前記複数のダイパッドの各々に前記半導体素子が搭載され、
当該方法が、前記仮保護フィルムを前記封止成形体から剥離する前又は後に前記封止成形体を分割して、1個の前記ダイパッド及び前記半導体素子を有する半導体装置を得る工程を更に備える、請求項20に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018045824 | 2018-03-13 | ||
JP2018045824 | 2018-03-13 | ||
PCT/JP2019/008205 WO2019176596A1 (ja) | 2018-03-13 | 2019-03-01 | 半導体封止成形用仮保護フィルム、仮保護フィルム付きリードフレーム、仮保護フィルム付き封止成形体、及び半導体装置を製造する方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2019176596A1 JPWO2019176596A1 (ja) | 2020-06-11 |
JP6785426B2 true JP6785426B2 (ja) | 2020-11-18 |
Family
ID=67907660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020506399A Active JP6785426B2 (ja) | 2018-03-13 | 2019-03-01 | 半導体封止成形用仮保護フィルム、仮保護フィルム付きリードフレーム、仮保護フィルム付き封止成形体、及び半導体装置を製造する方法 |
Country Status (9)
Country | Link |
---|---|
US (2) | US11251055B2 (ja) |
JP (1) | JP6785426B2 (ja) |
KR (4) | KR20200002329U (ja) |
CN (3) | CN117334646A (ja) |
MY (2) | MY197208A (ja) |
PH (2) | PH22019500012Y1 (ja) |
SG (1) | SG11202001612UA (ja) |
TW (1) | TWI761666B (ja) |
WO (2) | WO2019176596A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN211182160U (zh) * | 2018-03-12 | 2020-08-04 | 日立化成株式会社 | 卷轴体、封装体及捆包物 |
WO2021084716A1 (ja) * | 2019-10-31 | 2021-05-06 | 昭和電工マテリアルズ株式会社 | 仮固定用樹脂組成物、基板搬送用サポートテープ及び電子機器装置の製造方法 |
KR20220160008A (ko) * | 2020-04-06 | 2022-12-05 | 쇼와덴코머티리얼즈가부시끼가이샤 | 반도체 밀봉 성형용 임시 보호 필름 및 그 제조 방법, 임시 보호 필름 부착 리드 프레임, 임시 보호된 밀봉 성형체, 및 반도체 패키지를 제조하는 방법 |
CN112466957A (zh) * | 2020-10-28 | 2021-03-09 | 杭州士兰微电子股份有限公司 | 光传感器封装体的封装方法及封装结构的封装方法 |
US12031013B2 (en) | 2021-07-19 | 2024-07-09 | Momentive Performance Materials Inc. | Silane coupling agents to improve resin adhesion |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05129473A (ja) | 1991-11-06 | 1993-05-25 | Sony Corp | 樹脂封止表面実装型半導体装置 |
JPH1012773A (ja) | 1996-06-24 | 1998-01-16 | Matsushita Electron Corp | 樹脂封止型半導体装置およびその製造方法 |
US6700185B1 (en) * | 1999-11-10 | 2004-03-02 | Hitachi Chemical Co., Ltd. | Adhesive film for semiconductor, lead frame and semiconductor device using the same, and method for manufacturing semiconductor device |
JP3575480B2 (ja) * | 1999-11-10 | 2004-10-13 | 日立化成工業株式会社 | 半導体用接着フィルム |
JP3719234B2 (ja) * | 2001-08-06 | 2005-11-24 | 日立化成工業株式会社 | 半導体用接着フィルム、およびこれを用いた半導体用接着フィルム付きリードフレームならびに半導体装置 |
JP3857953B2 (ja) * | 2002-05-16 | 2006-12-13 | 株式会社巴川製紙所 | 半導体装置製造用接着シート |
WO2004075293A1 (ja) | 2003-02-19 | 2004-09-02 | Hitachi Chemical Co., Ltd. | 半導体用接着フィルム、これを用いた接着フィルム付金属板、接着フィルム付配線回路及び半導体装置並びに半導体装置の製造方法 |
JP2006318999A (ja) * | 2005-05-10 | 2006-11-24 | Nitto Denko Corp | 半導体装置製造用接着フィルム |
JP2008095063A (ja) * | 2006-09-13 | 2008-04-24 | Hitachi Chem Co Ltd | 半導体用接着フィルム、半導体用接着フィルム付きリードフレーム、半導体用接着フィルム付き半導体装置、半導体装置 |
JP2008103700A (ja) * | 2006-09-19 | 2008-05-01 | Hitachi Chem Co Ltd | 多層ダイボンドシート、半導体用接着フィルム付き半導体装置、半導体装置および半導体装置の製造方法 |
JP2008277802A (ja) * | 2007-04-04 | 2008-11-13 | Hitachi Chem Co Ltd | 半導体用接着フィルム、半導体用接着フィルム付きリードフレーム及びこれらを用いた半導体装置 |
JP5322609B2 (ja) * | 2008-12-01 | 2013-10-23 | 日東電工株式会社 | 半導体装置製造用フィルムロール |
WO2016157259A1 (ja) * | 2015-03-31 | 2016-10-06 | パナソニックIpマネジメント株式会社 | 封止用樹脂組成物と、この封止用樹脂組成物を用いた半導体装置、この封止用樹脂組成物を用いる半導体装置の製造方法 |
JP2016196322A (ja) | 2015-04-06 | 2016-11-24 | 大日本印刷株式会社 | 電池用包材のフィルムロール梱包体 |
KR20180123145A (ko) | 2016-03-24 | 2018-11-14 | 아지노모토 가부시키가이샤 | 필름 롤 곤포체(梱包體) 및 이의 제조방법 |
KR101763852B1 (ko) * | 2017-03-10 | 2017-08-01 | (주)인랩 | Qfn 반도체 패키지, 이의 제조방법 및 qfn 반도체 패키지 제조용 마스크 시트 |
-
2019
- 2019-03-01 KR KR2020207000005U patent/KR20200002329U/ko not_active Application Discontinuation
- 2019-03-01 CN CN202311257971.XA patent/CN117334646A/zh active Pending
- 2019-03-01 WO PCT/JP2019/008205 patent/WO2019176596A1/ja active Application Filing
- 2019-03-01 MY MYUI2019003342A patent/MY197208A/en unknown
- 2019-03-01 CN CN201990000192.2U patent/CN210956601U/zh active Active
- 2019-03-01 KR KR2020197000037U patent/KR20190002363U/ko not_active Application Discontinuation
- 2019-03-01 KR KR1020207012329A patent/KR20200133202A/ko not_active IP Right Cessation
- 2019-03-01 JP JP2020506399A patent/JP6785426B2/ja active Active
- 2019-03-01 WO PCT/JP2019/008214 patent/WO2019176598A1/ja active Application Filing
- 2019-03-01 CN CN201980005923.7A patent/CN111386594B/zh active Active
- 2019-03-01 KR KR1020227008855A patent/KR102664369B1/ko active IP Right Grant
- 2019-03-01 MY MYPI2020001115A patent/MY193648A/en unknown
- 2019-03-01 US US16/979,781 patent/US11251055B2/en active Active
- 2019-03-01 SG SG11202001612UA patent/SG11202001612UA/en unknown
- 2019-03-12 TW TW108108117A patent/TWI761666B/zh active
- 2019-06-27 PH PH22019500012U patent/PH22019500012Y1/en unknown
-
2020
- 2020-09-10 PH PH12020551432A patent/PH12020551432A1/en unknown
-
2021
- 2021-09-30 US US17/489,922 patent/US11682564B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20190002363U (ko) | 2019-09-24 |
PH22019500012U1 (en) | 2021-05-31 |
WO2019176598A1 (ja) | 2019-09-19 |
TW201939698A (zh) | 2019-10-01 |
KR20220039835A (ko) | 2022-03-29 |
PH22019500012Y1 (en) | 2021-05-31 |
US11682564B2 (en) | 2023-06-20 |
MY193648A (en) | 2022-10-21 |
SG11202001612UA (en) | 2020-03-30 |
CN210956601U (zh) | 2020-07-07 |
KR20200002329U (ko) | 2020-10-22 |
KR20200133202A (ko) | 2020-11-26 |
CN111386594A (zh) | 2020-07-07 |
MY197208A (en) | 2023-05-31 |
WO2019176596A1 (ja) | 2019-09-19 |
JPWO2019176596A1 (ja) | 2020-06-11 |
CN117334646A (zh) | 2024-01-02 |
CN111386594B (zh) | 2023-10-13 |
US11251055B2 (en) | 2022-02-15 |
TWI761666B (zh) | 2022-04-21 |
US20210020460A1 (en) | 2021-01-21 |
PH12020551432A1 (en) | 2021-09-01 |
KR102664369B1 (ko) | 2024-05-10 |
US20220020606A1 (en) | 2022-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6785426B2 (ja) | 半導体封止成形用仮保護フィルム、仮保護フィルム付きリードフレーム、仮保護フィルム付き封止成形体、及び半導体装置を製造する方法 | |
JP6747621B2 (ja) | 半導体封止成形用仮保護フィルム、仮保護フィルム付きリードフレーム、仮保護フィルム付き封止成形体及び半導体装置を製造する方法 | |
WO2020255975A1 (ja) | 半導体封止成形用仮保護フィルム、仮保護フィルム付きリードフレーム、仮保護フィルム付き封止成形体、及び半導体装置を製造する方法 | |
WO2021206069A1 (ja) | 半導体封止成形用仮保護フィルム及びその製造方法、仮保護フィルム付きリードフレーム、仮保護された封止成形体、並びに、半導体パッケージを製造する方法 | |
JP6744004B1 (ja) | 仮保護フィルム、リール体、包装体、梱包体、仮保護体、及び、半導体装置を製造する方法 | |
JP7447647B2 (ja) | 半導体封止成形用仮保護フィルム及びその製造方法、仮保護フィルム付きリードフレーム、封止成形体、並びに、半導体パッケージを製造する方法 | |
WO2021206058A1 (ja) | 半導体封止成形用仮保護フィルム、仮保護フィルム付きリードフレーム、封止成形体、及び、半導体パッケージを製造する方法 | |
JP2008095063A (ja) | 半導体用接着フィルム、半導体用接着フィルム付きリードフレーム、半導体用接着フィルム付き半導体装置、半導体装置 | |
JP3373848B2 (ja) | 半導体用接着フィルム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200207 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200207 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20200207 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20200227 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200310 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200508 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20200714 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200806 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20200820 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200923 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201006 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6785426 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |