JP6780023B2 - 金属ディスク・アレイを備えた積層型太陽電池 - Google Patents
金属ディスク・アレイを備えた積層型太陽電池 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims description 193
- 239000002184 metal Substances 0.000 title claims description 193
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 140
- 239000000758 substrate Substances 0.000 claims description 96
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 82
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical group [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 42
- 239000010931 gold Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 36
- 238000006243 chemical reaction Methods 0.000 claims description 26
- 239000011651 chromium Substances 0.000 claims description 25
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 24
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 22
- 229910052737 gold Inorganic materials 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 11
- 229910052763 palladium Inorganic materials 0.000 claims description 11
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 claims description 10
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- 150000001875 compounds Chemical class 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000000969 carrier Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
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- 230000003746 surface roughness Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
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- 238000001039 wet etching Methods 0.000 description 2
- 239000002028 Biomass Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003916 acid precipitation Methods 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical group [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
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- 239000002086 nanomaterial Substances 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
図2Bは、図2Aの積層型太陽電池を説明する断面図である。
図2A及び図2Bに示すように、積層型太陽電池100は、基板107と、前記基板107上に互いに積層して配置され、順次に互いに異なる波長帯域を有して光電変換を行う複数のサブセル110、130、150、170と、隣り合ったサブセルの間の界面の中で少なくとも一つに配置された金属ディスクアレイ140と、を含む。前記サブセルに対応する波長帯域の中心波長は、最上位層から次第に下部に進行することによって順次に減少する。前記金属ディスクアレイ140は、前記金属ディスクアレイ140の上部に配置されたサブセルで吸収することができず透過した光を反射させる。前記金属ディスクアレイ140は、ウェハボンディング技法によって挿入される。
効率∝最小光電流x(Voc、InGaP+Voc、GaAs+Voc、InGaAsP+Voc、InGaAs)
補助金属電極層177は、前記第4サブセル170と前記金属電極層107cとの間に配置され、前記第4サブセル170に整列される。前記金属シード層107bはクロム(Cr)であり、前記金属電極層107c及び前記補助金属電極層177は金(Au)である。
Claims (14)
- 基板と、
前記基板上に順次に積層して配置され、順次に互いに異なる波長帯域を有して光電変換を行う複数のサブセルと、
隣り合ったサブセルの間の界面の中で少なくとも一つに配置された金属ディスクアレイと、
を含む積層型太陽電池であって、
前記サブセルに対応する波長帯域の中心波長は、最上位層から次第に下部に進行することによって順次に増加し、
前記金属ディスクアレイは、前記金属ディスクアレイの上部に配置されたサブセルで吸収することができず透過した光を選択的に反射させ、
前記金属ディスクアレイは、表面プラズモン共鳴(Surface plasmon resonance、SPR)を用いて選択的反射フィルタ機能を提供し、
前記金属ディスクアレイのピッチは100nmないし300nmであり、
金属ディスクの直径はピッチの50ないし70%であり、
前記金属ディスクアレイは、
マトリックスの形で配列された金属ディスクアレイシード層と、
前記金属ディスクアレイシード層上に整列して配置された中間金属ディスクアレイ層と、
前記中間金属ディスクアレイ層上に整列して配置された金属ディスクアレイオーミックコンタクト層と、
を含み、
前記金属ディスクアレイシード層は20nm以下の厚さのクロム(Cr)又はTi/Ptであり、
前記金属ディスクアレイシード層はオーミック接合を形成され、
前記中間金属ディスクアレイ層は金(Au)又は銀(Ag)であり、
前記金属ディスクアレイオーミックコンタクト層はパラジウム(Pd)であることを特徴とする積層型太陽電池。 - 前記複数のサブセルは、上部から下部に進行することによって順に積層された第1ないし第4サブセルを含み、
前記金属ディスクアレイは、前記第2サブセルと第3サブセルとの間に配置され、
前記第1サブセルはInGaPサブセルであり、前記第1サブセルの波長帯域は400nm−600nmであり、
前記第2サブセルはGaAsサブセルであり、前記第2サブセルの波長帯域は600−800nmであり、
前記第3サブセルはInGaAsPサブセルであり、前記第3サブセルの波長帯域は800nm−1000nmであり、
前記第4サブセルはInGaAsサブセルであり、前記第4サブセルの波長帯域は1000nm−1300nmであることを特徴とする請求項1に記載の積層型太陽電池。 - 第1サブセルは、
n−InGaPベース層と、
前記ベース層上に配置されたp+−InGaPエミッタ層と、
前記p+−InGaPエミッタ層上に配置されたp+−AlInP窓層と、
前記p+−AlInP窓層上に配置されたp+−GaAsコンタクト層と、
を含むことを特徴とする請求項2に記載の積層型太陽電池。 - 第2サブセルは、
n++−GaAsコンタクト層と、
n++−GaAsコンタクト層上に配置されたn−AlGaAsバックサーフェイスフィールド層(back−surface field layer)と、
前記n−AlGaAsバックサーフェイスフィールド層(back−surface field layer)上に配置されたn−GaAsベース層と、
前記n−GaAsベース層上に配置されたp+−GaAsエミッタ層と、
前記p+−GaAsエミッタ層上に配置されたp+−AlGaAs窓層と、
前記p+−AlGaAs窓層上に配置されたp+−GaAsコンタクト層と、
を含むことを特徴とする請求項2に記載の積層型太陽電池。 - 第3サブセルは、
n−InPバックサーフェイスフィールド層(back−surface field layer)と、
前記n−InPバックサーフェイスフィールド層上に配置されたn−InGaAsPベース層と、
前記n−InGaAsPベース層上に配置されたp+−InGaAsPエミッタ層と、
前記p+−InGaAsPエミッタ層上に配置されたp+−InP窓層と、
前記p+−InP窓層上に配置されたp++−InGaAsコンタクト層と、
を含むことを特徴とする請求項2に記載の積層型太陽電池。 - 第4サブセルは、
n+−InPコンタクト層と、
前記n−InPコンタクト層上に配置されたn−InPバックサーフェイスフィールド層(back−surface field layer)と、
前記n−InPバックサーフェイスフィールド層上に配置されたn−InGaAsベース層と、
前記n−InGaAsベース層上に配置されたp+−InGaAsエミッタ層と、
前記p+−InGaAsエミッタ層上に配置されたp+−InP窓層と、
前記p+−InP窓層上に配置されたp+−InPコンタクト層と、
を含むことを特徴とする請求項2に記載の積層型太陽電池。 - 前記積層型太陽電池は、
前記第1サブセルと前記第2サブセルとの間に配置されたGaAsトンネル接合層と、
前記第3サブセルと前記第4サブセルとの間に配置されたInGaAsトンネル接合層と、
をさらに含み、
前記GaAsトンネル接合層は、
p++−GaAsトンネル接合層と、
前記p++−GaAsトンネル接合層上に配置されたn++−GaAsトンネル接合層と、
を含み、
前記InGaAsトンネル接合層は、
p++−InGaAsトンネル接合層と、
前記p++−InGaAsトンネル接合層上に配置されたn++−InGaAsトンネル接合層と、
を含むことを特徴とする請求項2に記載の積層型太陽電池。 - 前記基板は、
フレキシブルフィルム基板と、
前記フレキシブルフィルム基板上に配置された金属シード層と、
前記金属シード層上に配置された金属電極層と、
をさらに含み、
補助金属電極層は、前記第4サブセルと前記金属電極層との間に配置され、前記第4サブセルに整列され、
前記金属シード層はクロム(Cr)であり、
前記金属電極層及び前記補助金属電極層は金(Au)であることを特徴とする請求項2に記載の積層型太陽電池。 - GaAs基板上に第1AlAs犠牲層、第1サブセル、GaAsトンネル接合層、及び第2サブセルを順に積層する段階と、
InP基板上に第2AlAs犠牲層、第3サブセル、InGaAsトンネル接合層、及び第4サブセルを順に積層する段階と、
前記InP基板の前記第4サブセル上に補助金属電極層を形成する段階と、
前記補助金属電極層が形成された前記InP基板を前記InP基板を露出するようにパターニングする段階と、
フレキシブルフィルム基板上に金属シード層及び金属電極層を順に積層する段階と、
前記フレキシブルフィルム基板の前記金属電極層と前記パターニングされたInP基板の前記補助金属電極層を互いにボンディングさせる段階と、
ボンディングされたInP基板とフレキシブルフィルム基板で前記InP基板と前記第3サブセルとの間に配置された前記第2AlAs犠牲層を除去して前記InP基板を除去する段階と、
前記フレキシブルフィルム基板で前記第3サブセル上に金属ディスクアレイを形成する段階と、
前記金属ディスクアレイと前記第2サブセルが対向するように配置し、圧着させて互いにボンディングさせる段階と、
前記GaAs基板と前記第1サブセルとの間に配置された第1AlAs犠牲層を除去して前記GaAs基板を除去する段階と、
露出された第1サブセル上に金属フィンガ電極パターンを形成する段階と、
を含む積層型太陽電池の製造方法であって、
前記金属ディスクアレイは、前記金属ディスクアレイの上部に配置されたサブセルで吸収することができず透過した光を選択的反射させ、
前記金属ディスクアレイは、表面プラズモン共鳴(Surface plasmon resonance、SPR)を用いて 選択的反射フィルタ機能を提供し、
前記金属ディスクアレイのピッチは100nmないし300nmであり、
金属ディスクの直径はピッチの50ないし70%であり、
前記金属ディスクアレイは、
マトリックスの形で配列された金属ディスクアレイシード層と、
前記金属ディスクアレイシード層上に整列して配置された中間金属ディスクアレイ層と、
前記中間金属ディスクアレイ層上に整列して配置された金属ディスクアレイオーミックコンタクト層と、
を含み、
前記金属ディスクアレイシード層は20nm以下の厚さのクロム(Cr)又はTi/Ptであり、
前記金属ディスクアレイシード層はオーミック接合を形成され、
前記中間金属ディスクアレイ層は金(Au)又は銀(Ag)であり、
前記金属ディスクアレイオーミックコンタクト層はパラジウム(Pd)であることを特徴とする積層型太陽電池の製造方法。 - 前記第1サブセルはInGaPサブセルであり、前記第1サブセルの波長帯域は400nm−600nmであり、
前記第2サブセルはGaAsサブセルであり、前記第2サブセルの波長帯域は600−800nmであり、
前記第3サブセルはInGaAsPサブセルであり、前記第3サブセルの波長帯域は800nm−1000nmであり、
前記第4サブセルはInGaAsサブセルであり、前記第4サブセルの波長帯域は1000nm−1300nmであることを特徴とする請求項9に記載の積層型太陽電池の製造方法。 - 第1サブセルは、
第1AlAs犠牲層上に配置されたp+−GaAsコンタクト層と、
p+−GaAsコンタクト層上に配置されたp+−AlInP窓層と、
前記p+−AlInP窓層上に配置されたp+−InGaPエミッタ層と、
前記p+−InGaPエミッタ層上に配置されたn−InGaPベース層と、
を含むことを特徴とする請求項10に記載の積層型太陽電池の製造方法。 - 第2サブセルは、
前記GaAsトンネル接合層上に配置されたp+−GaAsコンタクト層と、
前記p+−GaAsコンタクト層上に配置されたp+−AlGaAs窓層と、
前記p+−AlGaAs窓層上に配置されたp+−GaAsエミッタ層と、
前記p+−GaAsエミッタ層上に配置されたn−GaAsベース層と、
前記n−GaAsベース層上に配置されたn−AlGaAsバックサーフェイスフィールド層と、
前記n−AlGaAsバックサーフェイスフィールド層上に配置されたn++−GaAsコンタクト層と、
を含むことを特徴とする請求項10に記載の積層型太陽電池の製造方法。 - 前記第3サブセルは、
前記第2AlAs犠牲層上に配置されたp++−InGaAsコンタクト層と、
前記p++−InGaAsコンタクト層上に配置されたp+−InP窓層と、
前記p+−InP窓層上に配置されたp+−InGaAsPエミッタ層と、
前記p+−InGaAsPエミッタ層上に配置されたn−InGaAsPベース層と、
前記n−InGaAsPベース層上に配置されたn−InPバックサーフェイスフィールド層と、
を含むことを特徴とする請求項10に記載の積層型太陽電池の製造方法。 - 前記第4サブセルは、
前記InGaAsトンネル接合層上に配置されたp+−InPコンタクト層と、
前記p+−InPコンタクト層上に配置されたp+−InP窓層と、
前記p+−InP窓層上に配置されたp+−InGaAsエミッタ層と、
前記p+−InGaAsエミッタ層上に配置されたn−InGaAsベース層と、
前記n−InGaAsベース層上に配置されたn−InPバックサーフェイスフィールド層と、
前記n−InPバックサーフェイスフィールド層上に配置されたn+−InPコンタクト層と、
を含むことを特徴とする請求項10に記載の積層型太陽電池の製造方法。
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