JP6778176B2 - 基板の厚さプロファイルの調節 - Google Patents

基板の厚さプロファイルの調節 Download PDF

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Publication number
JP6778176B2
JP6778176B2 JP2017502835A JP2017502835A JP6778176B2 JP 6778176 B2 JP6778176 B2 JP 6778176B2 JP 2017502835 A JP2017502835 A JP 2017502835A JP 2017502835 A JP2017502835 A JP 2017502835A JP 6778176 B2 JP6778176 B2 JP 6778176B2
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Japan
Prior art keywords
substrate
polishing
polishing pad
pressure
back surface
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JP2017502835A
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English (en)
Japanese (ja)
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JP2017527107A (ja
JP2017527107A5 (enExample
Inventor
ジェイ グルサミー，
ジェイ グルサミー，
ハン チー チェン，
ハン チー チェン，
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Priority claimed from US14/334,948 external-priority patent/US9662762B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2017527107A publication Critical patent/JP2017527107A/ja
Publication of JP2017527107A5 publication Critical patent/JP2017527107A5/ja
Application granted granted Critical
Publication of JP6778176B2 publication Critical patent/JP6778176B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
JP2017502835A 2014-07-18 2015-07-10 基板の厚さプロファイルの調節 Active JP6778176B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462026269P 2014-07-18 2014-07-18
US14/334,948 US9662762B2 (en) 2014-07-18 2014-07-18 Modifying substrate thickness profiles
US14/334,948 2014-07-18
US62/026,269 2014-07-18
PCT/US2015/040064 WO2016010865A1 (en) 2014-07-18 2015-07-10 Modifying substrate thickness profiles

Publications (3)

Publication Number Publication Date
JP2017527107A JP2017527107A (ja) 2017-09-14
JP2017527107A5 JP2017527107A5 (enExample) 2018-08-23
JP6778176B2 true JP6778176B2 (ja) 2020-10-28

Family

ID=55078939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017502835A Active JP6778176B2 (ja) 2014-07-18 2015-07-10 基板の厚さプロファイルの調節

Country Status (5)

Country Link
JP (1) JP6778176B2 (enExample)
KR (1) KR102376928B1 (enExample)
CN (1) CN106463384B (enExample)
TW (1) TWI691379B (enExample)
WO (1) WO2016010865A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109155249B (zh) * 2016-03-25 2023-06-23 应用材料公司 局部区域研磨系统以及用于研磨系统的研磨垫组件
JP7044774B2 (ja) * 2016-10-10 2022-03-30 アプライド マテリアルズ インコーポレイテッド 化学機械研磨のためのリアルタイム・プロファイル制御
US12036634B2 (en) * 2016-10-18 2024-07-16 Ebara Corporation Substrate processing control system, substrate processing control method, and program
KR102629679B1 (ko) * 2018-11-09 2024-01-29 주식회사 케이씨텍 연마 장치용 캐리어 헤드 및 이에 사용되는 멤브레인
TWI834195B (zh) 2019-04-18 2024-03-01 美商應用材料股份有限公司 Ｃｍｐ期間基於溫度的原位邊緣不對稱校正的電腦可讀取儲存媒體
US11282755B2 (en) * 2019-08-27 2022-03-22 Applied Materials, Inc. Asymmetry correction via oriented wafer loading
TWI826280B (zh) 2019-11-22 2023-12-11 美商應用材料股份有限公司 在拋光墊中使用溝槽的晶圓邊緣不對稱校正
CN111975469A (zh) * 2020-08-28 2020-11-24 上海华力微电子有限公司 化学机械研磨的方法及研磨系统
US20230356354A1 (en) * 2022-05-03 2023-11-09 Applied Materials, Inc. Compliant inner ring for a chemical mechanical polishing system
US20240326195A1 (en) * 2023-03-30 2024-10-03 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-Blade Trimming and Dressing Tool

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06333891A (ja) * 1993-05-24 1994-12-02 Sony Corp 基板研磨装置および基板保持台
US5938504A (en) * 1993-11-16 1999-08-17 Applied Materials, Inc. Substrate polishing apparatus
US5558563A (en) * 1995-02-23 1996-09-24 International Business Machines Corporation Method and apparatus for uniform polishing of a substrate
US6267659B1 (en) * 2000-05-04 2001-07-31 International Business Machines Corporation Stacked polish pad
JP2002246346A (ja) * 2001-02-14 2002-08-30 Hiroshima Nippon Denki Kk 化学機械研磨装置
US20020164926A1 (en) * 2001-05-07 2002-11-07 Simon Mark G. Retainer ring and method for polishing a workpiece
US6863771B2 (en) * 2001-07-25 2005-03-08 Micron Technology, Inc. Differential pressure application apparatus for use in polishing layers of semiconductor device structures and methods
US6764387B1 (en) * 2003-03-07 2004-07-20 Applied Materials Inc. Control of a multi-chamber carrier head
US6913518B2 (en) * 2003-05-06 2005-07-05 Applied Materials, Inc. Profile control platen
TWI275451B (en) * 2005-01-11 2007-03-11 Asia Ic Mic Process Inc Measurement of thickness profile and elastic modulus profile of polishing pad
US7198548B1 (en) * 2005-09-30 2007-04-03 Applied Materials, Inc. Polishing apparatus and method with direct load platen
US8858300B2 (en) * 2010-02-09 2014-10-14 International Business Machines Corporation Applying different pressures through sub-pad to fixed abrasive CMP pad
CN102884612B (zh) * 2011-01-03 2017-02-15 应用材料公司 压力控制的抛光压板
JP6282437B2 (ja) * 2012-10-18 2018-02-21 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 研磨パッドコンディショナ用ダンパ
US20140141694A1 (en) * 2012-11-21 2014-05-22 Applied Materials, Inc. In-Sequence Spectrographic Sensor

Also Published As

Publication number Publication date
WO2016010865A1 (en) 2016-01-21
CN106463384B (zh) 2020-03-17
TWI691379B (zh) 2020-04-21
KR102376928B1 (ko) 2022-03-18
KR20170034404A (ko) 2017-03-28
TW201611946A (en) 2016-04-01
CN106463384A (zh) 2017-02-22
JP2017527107A (ja) 2017-09-14

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