KR102376928B1 - 기판 두께 프로파일들의 수정 - Google Patents

기판 두께 프로파일들의 수정 Download PDF

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Publication number
KR102376928B1
KR102376928B1 KR1020177004530A KR20177004530A KR102376928B1 KR 102376928 B1 KR102376928 B1 KR 102376928B1 KR 1020177004530 A KR1020177004530 A KR 1020177004530A KR 20177004530 A KR20177004530 A KR 20177004530A KR 102376928 B1 KR102376928 B1 KR 102376928B1
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South Korea
Prior art keywords
polishing
substrate
polishing pad
pressure
pad
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KR1020177004530A
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English (en)
Korean (ko)
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KR20170034404A (ko
Inventor
제이 그루사미
훙 치 첸
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Priority claimed from US14/334,948 external-priority patent/US9662762B2/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20170034404A publication Critical patent/KR20170034404A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
KR1020177004530A 2014-07-18 2015-07-10 기판 두께 프로파일들의 수정 Active KR102376928B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462026269P 2014-07-18 2014-07-18
US14/334,948 US9662762B2 (en) 2014-07-18 2014-07-18 Modifying substrate thickness profiles
US14/334,948 2014-07-18
US62/026,269 2014-07-18
PCT/US2015/040064 WO2016010865A1 (en) 2014-07-18 2015-07-10 Modifying substrate thickness profiles

Publications (2)

Publication Number Publication Date
KR20170034404A KR20170034404A (ko) 2017-03-28
KR102376928B1 true KR102376928B1 (ko) 2022-03-18

Family

ID=55078939

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177004530A Active KR102376928B1 (ko) 2014-07-18 2015-07-10 기판 두께 프로파일들의 수정

Country Status (5)

Country Link
JP (1) JP6778176B2 (enExample)
KR (1) KR102376928B1 (enExample)
CN (1) CN106463384B (enExample)
TW (1) TWI691379B (enExample)
WO (1) WO2016010865A1 (enExample)

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Publication number Priority date Publication date Assignee Title
CN109155249B (zh) * 2016-03-25 2023-06-23 应用材料公司 局部区域研磨系统以及用于研磨系统的研磨垫组件
US10562148B2 (en) * 2016-10-10 2020-02-18 Applied Materials, Inc. Real time profile control for chemical mechanical polishing
WO2018074091A1 (ja) * 2016-10-18 2018-04-26 株式会社 荏原製作所 基板処理制御システム、基板処理制御方法、およびプログラム
KR102629679B1 (ko) * 2018-11-09 2024-01-29 주식회사 케이씨텍 연마 장치용 캐리어 헤드 및 이에 사용되는 멤브레인
TWI771668B (zh) 2019-04-18 2022-07-21 美商應用材料股份有限公司 Cmp期間基於溫度的原位邊緣不對稱校正
US11282755B2 (en) 2019-08-27 2022-03-22 Applied Materials, Inc. Asymmetry correction via oriented wafer loading
TWI826280B (zh) 2019-11-22 2023-12-11 美商應用材料股份有限公司 在拋光墊中使用溝槽的晶圓邊緣不對稱校正
CN111975469A (zh) * 2020-08-28 2020-11-24 上海华力微电子有限公司 化学机械研磨的方法及研磨系统
US20230356354A1 (en) * 2022-05-03 2023-11-09 Applied Materials, Inc. Compliant inner ring for a chemical mechanical polishing system
US20240326195A1 (en) * 2023-03-30 2024-10-03 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-Blade Trimming and Dressing Tool

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246346A (ja) * 2001-02-14 2002-08-30 Hiroshima Nippon Denki Kk 化学機械研磨装置
JP2014501455A (ja) 2011-01-03 2014-01-20 アプライド マテリアルズ インコーポレイテッド 圧力制御された研磨プラテン

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Publication number Priority date Publication date Assignee Title
JPH06333891A (ja) * 1993-05-24 1994-12-02 Sony Corp 基板研磨装置および基板保持台
US5938504A (en) * 1993-11-16 1999-08-17 Applied Materials, Inc. Substrate polishing apparatus
US5558563A (en) * 1995-02-23 1996-09-24 International Business Machines Corporation Method and apparatus for uniform polishing of a substrate
US6267659B1 (en) * 2000-05-04 2001-07-31 International Business Machines Corporation Stacked polish pad
US20020164926A1 (en) * 2001-05-07 2002-11-07 Simon Mark G. Retainer ring and method for polishing a workpiece
US6863771B2 (en) * 2001-07-25 2005-03-08 Micron Technology, Inc. Differential pressure application apparatus for use in polishing layers of semiconductor device structures and methods
US6764387B1 (en) * 2003-03-07 2004-07-20 Applied Materials Inc. Control of a multi-chamber carrier head
US6913518B2 (en) * 2003-05-06 2005-07-05 Applied Materials, Inc. Profile control platen
TWI275451B (en) * 2005-01-11 2007-03-11 Asia Ic Mic Process Inc Measurement of thickness profile and elastic modulus profile of polishing pad
US7198548B1 (en) * 2005-09-30 2007-04-03 Applied Materials, Inc. Polishing apparatus and method with direct load platen
US8858300B2 (en) * 2010-02-09 2014-10-14 International Business Machines Corporation Applying different pressures through sub-pad to fixed abrasive CMP pad
JP6282437B2 (ja) * 2012-10-18 2018-02-21 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 研磨パッドコンディショナ用ダンパ
US20140141694A1 (en) * 2012-11-21 2014-05-22 Applied Materials, Inc. In-Sequence Spectrographic Sensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246346A (ja) * 2001-02-14 2002-08-30 Hiroshima Nippon Denki Kk 化学機械研磨装置
JP2014501455A (ja) 2011-01-03 2014-01-20 アプライド マテリアルズ インコーポレイテッド 圧力制御された研磨プラテン

Also Published As

Publication number Publication date
JP6778176B2 (ja) 2020-10-28
WO2016010865A1 (en) 2016-01-21
CN106463384A (zh) 2017-02-22
CN106463384B (zh) 2020-03-17
KR20170034404A (ko) 2017-03-28
JP2017527107A (ja) 2017-09-14
TWI691379B (zh) 2020-04-21
TW201611946A (en) 2016-04-01

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