JP6772147B2 - レーザ衝撃ピーニング処理において使用するための方法および装置 - Google Patents
レーザ衝撃ピーニング処理において使用するための方法および装置 Download PDFInfo
- Publication number
- JP6772147B2 JP6772147B2 JP2017536859A JP2017536859A JP6772147B2 JP 6772147 B2 JP6772147 B2 JP 6772147B2 JP 2017536859 A JP2017536859 A JP 2017536859A JP 2017536859 A JP2017536859 A JP 2017536859A JP 6772147 B2 JP6772147 B2 JP 6772147B2
- Authority
- JP
- Japan
- Prior art keywords
- energy
- output
- laser
- time profile
- profile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 46
- 230000003287 optical effect Effects 0.000 claims description 72
- 239000013078 crystal Substances 0.000 claims description 16
- 230000010287 polarization Effects 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 230000035939 shock Effects 0.000 claims description 7
- XBJJRSFLZVLCSE-UHFFFAOYSA-N barium(2+);diborate Chemical compound [Ba+2].[Ba+2].[Ba+2].[O-]B([O-])[O-].[O-]B([O-])[O-] XBJJRSFLZVLCSE-UHFFFAOYSA-N 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims description 4
- 102100038374 Pinin Human genes 0.000 claims 2
- 101710173952 Pinin Proteins 0.000 claims 2
- 230000000630 rising effect Effects 0.000 claims 1
- 230000005284 excitation Effects 0.000 description 21
- 230000003321 amplification Effects 0.000 description 17
- 238000003199 nucleic acid amplification method Methods 0.000 description 17
- 238000012545 processing Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000007493 shaping process Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 5
- 238000011282 treatment Methods 0.000 description 4
- 238000005482 strain hardening Methods 0.000 description 3
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000013480 data collection Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- HIQSCMNRKRMPJT-UHFFFAOYSA-J lithium;yttrium(3+);tetrafluoride Chemical compound [Li+].[F-].[F-].[F-].[F-].[Y+3] HIQSCMNRKRMPJT-UHFFFAOYSA-J 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- -1 rare earth ions Chemical class 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005480 shot peening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 229910001428 transition metal ion Inorganic materials 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/061—Crystal lasers or glass lasers with elliptical or circular cross-section and elongated shape, e.g. rod
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D7/00—Modifying the physical properties of iron or steel by deformation
- C21D7/02—Modifying the physical properties of iron or steel by deformation by cold working
- C21D7/04—Modifying the physical properties of iron or steel by deformation by cold working of the surface
- C21D7/06—Modifying the physical properties of iron or steel by deformation by cold working of the surface by shot-peening or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/356—Working by laser beam, e.g. welding, cutting or boring for surface treatment by shock processing
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D10/00—Modifying the physical properties by methods other than heat treatment or deformation
- C21D10/005—Modifying the physical properties by methods other than heat treatment or deformation by laser shock processing
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F3/00—Changing the physical structure of non-ferrous metals or alloys by special physical methods, e.g. treatment with neutrons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0064—Anti-reflection devices, e.g. optical isolaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0085—Modulating the output, i.e. the laser beam is modulated outside the laser cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08018—Mode suppression
- H01S3/08022—Longitudinal modes
- H01S3/08031—Single-mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
- H01S3/10023—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers by functional association of additional optical elements, e.g. filters, gratings, reflectors
- H01S3/1003—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers by functional association of additional optical elements, e.g. filters, gratings, reflectors tunable optical elements, e.g. acousto-optic filters, tunable gratings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10084—Frequency control by seeding
- H01S3/10092—Coherent seed, e.g. injection locking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/139—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1645—Solid materials characterised by a crystal matrix halide
- H01S3/1653—YLiF4(YLF, LYF)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
- H01S3/2316—Cascaded amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thermal Sciences (AREA)
- Lasers (AREA)
- Laser Beam Processing (AREA)
Description
Claims (29)
- レーザ衝撃ピーニング処理における使用のための装置であって、前記装置は、
第1エネルギー、第1空間プロファイル、および第1時間プロファイルを有するパルスレーザビームを出力するよう構成されたダイオード励起固体レーザ(DPSSL)発振器と、
前記DPSSL発振器から前記パルスレーザビームを受容し、前記パルスレーザビームを前記第1エネルギーから第2エネルギーへと変換し、前記第1時間プロファイルを第2時間プロファイルへと変換し、前記第2エネルギーおよび前記第2時間プロファイルを有するビームを出力するよう構成された変調器と、
前記変調器により出力された前記ビームを受容し、前記第1空間プロファイルを第2空間プロファイルへと変化させ、前記第2エネルギー、前記第2時間プロファイル、および前記第2空間プロファイルを有するビームを出力するよう構成された光学フィルタと、
多段を有する多段増幅器であって、
前記第2エネルギーおよび前記第2時間プロファイルを有する前記ビームを受容し、前記第2エネルギーから第3エネルギーへと前記ビームを増幅し、前記第2時間プロファイルから第3時間プロファイルへと前記ビームを変換し、前記第3エネルギーおよび前記第3時間プロファイルを有するビームを出力するよう構成された第1段、および、
前記第3エネルギーおよび前記第3時間プロファイルを有する前記ビームを受容し、前記第3エネルギーから第4エネルギーへと前記ビームを増幅し、前記第3時間プロファイルから第4時間プロファイルへと前記ビームを変換し、前記第4エネルギーおよび前記第4時間プロファイルを有するビームを出力するよう構成された第2段、
を含む、多段増幅器と、
を含む、装置。 - 前記DPSSL発振器から出力された前記ビームは、第1直径および翼部を有し、前記光学フィルタは、
前記変換済みビームを前記第1直径よりも大きい直径へと拡張させるよう構成されたビームエキスパンダと、
前記ビームエキスパンダから前記拡張済みビームを受容し、前記翼部を除去し、前記翼部のない前記第2空間プロファイルを有する前記ビームを出力するよう構成された、アポダイザと、
を含む、請求項1に記載の装置。 - 前記多段増幅器は、
前記第4エネルギーならびに前記第4時間プロファイルを有する前記ビームを受容し、前記ビームを前記第4エネルギーから第5エネルギーへと増幅し、前記ビームを前記第4時間プロファイルから第5時間プロファイルへと変換し、前記第5エネルギーならびに前記第5時間プロファイルを有するビームを出力するよう構成された第3段と、
前記第5エネルギーならびに前記第5時間プロファイルを有する前記ビームを受容し、前記ビームを前記第5エネルギーから第6エネルギーへと増幅し、前記ビームを前記第5時間プロファイルから第6時間プロファイルへと変換し、前記第6エネルギーならびに前記第6時間プロファイルを有するビームを出力するよう構成された第4段と、
をさらに含む、請求項1に記載の装置。 - 前記発振器は第1直径を有するレーザロッドを含み、前記多段増幅器の前記第1段は、前記第1直径よりも大きい第2直径の第2レーザロッドを含み、前記第2レーザロッドは、前記第2エネルギーを有する前記ビームを前記第3エネルギーに増幅し、前記第2時間プロファイルを有する前記ビームを前記第3時間プロファイルに変換し、前記第3エネルギーおよび前記第3時間プロファイルを有する前記ビームを出力するよう構成され、前記多段増幅器の前記第2段は、前記第2直径よりも大きい第3直径の第3レーザロッドを含み、前記第3レーザロッドは、前記第3エネルギーを有する前記ビームを前記第4エネルギーへと増幅し、前記第3時間プロファイルを有する前記ビームを前記第4時間プロファイルへと変換し、前記第4エネルギーおよび前記第4時間プロファイルを有する前記ビームを出力するよう構成されている、請求項1に記載の装置。
- 前記第1レーザロッド、前記第2レーザロッド、および前記第3レーザロッドは、ドープされたYLF結晶体を含む、請求項4に記載の装置。
- 前記第2レーザロッドの前記直径は3〜7mmの範囲内である、請求項4に記載の装置。
- 前記第3レーザロッドの前記直径は7〜11mmの範囲内である、請求項4に記載の装置。
- 前記第3レーザロッドの前記直径は12〜18mmの範囲内である、請求項4に記載の装置。
- 前記第3レーザロッドの前記直径は25mm以上である、請求項4に記載の装置。
- 前記発振器から出力された前記ビームは第1ビーム直径を有し、前記第1段は、
前記発振器から前記ビームを受容し、前記ビームを前記第1ビーム直径よりも大きい直径へと画像中継し、前記画像中継されたビームを前記第2レーザロッドへと出力するよう構成された真空リレー撮像モジュール(VRIM)
をさらに含む、請求項4に記載の装置。 - 前記多段増幅器から出力された前記ビームをターゲット部分へと供給するよう構成されたビーム供給システムをさらに含む、請求項1に記載の装置。
- 前記増幅および変換済みビームはスポットサイズを有し、前記レーザビーム供給装置は前記スポットサイズを調整するよう構成されたレンズを有する、請求項11に記載の装置。
- 前記増幅済みパルスレーザビームは近接場値および測定値を有し、前記レーザビーム供給装置は、前記増幅および変換済みビームの前記近接場値および前記測定値を維持し、前記ビームを前記ターゲット部分へと供給するよう構成された真空リレー撮像モジュール(VRIM)を含む、請求項11に記載の装置。
- 前記多段増幅器からレーザビーム供給装置への第1方向における前記増幅および変換済みビームは通過させ、且つ、前記レーザビーム供給装置からの第2方向におけるビームはブロックするよう構成された光アイソレータをさらに含む、請求項1に記載の装置。
- ターゲット部分を含むよう構成されたピーニングセルをさらに含む、請求項1に記載の装置。
- 前記ピーニングセルは、前記増幅および変換済みビームが前記ターゲット部分に接触する場所に不透明オーバーレイを適用するよう構成された不透明オーバーレイアプリケータと、前記増幅および変換済みビームが前記ターゲット部分に接触する場所に透明オーバーレイを適用するよう構成された透明オーバーレイアプリケータと、を有する、請求項15に記載の装置。
- 前記変調器は、前記パルスレーザビームにより接触されたときに前記パルスレーザビームを前記第2エネルギーおよび前記第2時間プロファイルへと変換するホウ酸バリウム(BBO)結晶体を含むパルススライサーである、請求項1に記載の装置。
- 前記発振器から出力された前記ビームは5nsよりも大きい立ち上がり時間を有する前縁部を有し、前記変調器は、前記前縁部を5ns以下に切り取るよう構成されたパルススライサーである、請求項1に記載の装置。
- 前記DPSSL発振器から出力された前記ビームは偏光を有し、前記装置は、前記偏光に依存する第1方向における前記ビームを伝達し、前記偏光に依存する第2方向における前記ビームをブロックするよう構成された光アイソレータをさらに含む、請求項1に記載の装置。
- 前記DPSSL発振器は20Hzの繰り返し率で前記パルスレーザビームを出力するよう構成されている、請求項1に記載の装置。
- 前記DPSSL発振器は20%より小さいビーム一様性で前記パルスレーザビームを出力するよう構成されている、請求項1に記載の装置。
- 前記DPSSL発振器は光キャビティを含み、
前記装置は、シードレーザを前記光キャビティへと出力し、それにより単一縦モードのパルスレーザビームを生成および出力するよう構成されたインジェクションシーダを含む、
請求項1に記載の装置。 - 前記インジェクションシーダは、PZT電圧と基準電圧とを比較し、比較値を出力し、前記比較値に基づいてPZT制御信号を出力し、前記比較値に基づいてリセット信号を出力するよう構成されたシーダ制御器を有し、前記光キャビティは、スタート位置を有するミラーと、前記ミラーに接続され、且つ、前記リセット信号を受信し、前記ミラーを、現在位置から前記スタート位置へとリセットし、前記PZT制御信号を受信し、前記ミラーを新しい位置に移動させ、前記PZTの前記現在位置に対応する前記PZT電圧を出力するよう構成された圧電性変換器(PZT)と、を有する、請求項22に記載の装置。
- ターゲット部分をレーザ衝撃ピーニングするための方法であって、前記方法は、
第1エネルギー、第1ビーム直径、および第1時間プロファイルを有するパルスレーザビームを出力することと、
前記第1エネルギーおよび前記第1時間プロファイルを有する前記ビームを第2エネルギーおよび第2時間プロファイルへと変換することと、
多段増幅器を介して、前記第2エネルギーを有する前記ビームを第3エネルギーに増幅し、前記ビームを前記第1ビーム直径よりも大きい第2ビーム直径へと変換し、前記ビームを前記第2時間プロファイルから第3時間プロファイルへと変換することと、
前記ターゲット部分をレーザ衝撃ピーニングするために、前記第3エネルギー、前記第2ビーム直径、および前記第3時間プロファイルを有する前記ビームを前記ターゲット部分へと出力することと、
を含む、方法。 - 前記第1エネルギーおよび前記第1時間プロファイルを有する前記ビームは第1空間プロファイルを有し、前記方法は、
前記第2エネルギー、前記第2時間プロファイル、および前記第1空間プロファイルを有する前記ビームを受容することと、
前記ビームを変換して、前記第2エネルギー、前記第2時間プロファイル、および前記第2空間プロファイルを有するビームを出力することと、
をさらに含む、請求項24に記載の方法。 - 前記第3エネルギーおよび前記第3時間プロファイルを有する前記ビームはスポットサイズを有し、前記方法は、
前記第3エネルギー、前記第3時間プロファイル、および前記スポットサイズを有する前記ビームを受容することと、
前記第3エネルギー、前記第3時間プロファイル、および前記スポットサイズを有する前記ビームを、3mm乃至8mmのスポットサイズへと集束させることと、
前記第3エネルギー、前記第3時間プロファイル、および3mm乃至8mmの前記スポットサイズを有する前記ビームを、前記ターゲット部分へと出力することと、
をさらに含む、請求項24に記載の方法。 - 前記第3エネルギーは5J乃至10Jである、請求項24に記載の方法。
- 前記第2ビーム直径は22mm乃至22.5mmである、請求項24に記載の方法。
- 前記第3時間プロファイルは12nsの平均パルス幅を含む、請求項24に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562101442P | 2015-01-09 | 2015-01-09 | |
US62/101,442 | 2015-01-09 | ||
PCT/US2016/012666 WO2016112301A1 (en) | 2015-01-09 | 2016-01-08 | Method and apparatus for use in laser shock peening processes |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020164558A Division JP7038775B2 (ja) | 2015-01-09 | 2020-09-30 | レーザ衝撃ピーニング処理において使用するための方法および装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018508981A JP2018508981A (ja) | 2018-03-29 |
JP6772147B2 true JP6772147B2 (ja) | 2020-10-21 |
Family
ID=56356479
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017536859A Active JP6772147B2 (ja) | 2015-01-09 | 2016-01-08 | レーザ衝撃ピーニング処理において使用するための方法および装置 |
JP2020164558A Active JP7038775B2 (ja) | 2015-01-09 | 2020-09-30 | レーザ衝撃ピーニング処理において使用するための方法および装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020164558A Active JP7038775B2 (ja) | 2015-01-09 | 2020-09-30 | レーザ衝撃ピーニング処理において使用するための方法および装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US10819079B2 (ja) |
EP (2) | EP3588698B1 (ja) |
JP (2) | JP6772147B2 (ja) |
CN (2) | CN110564937B (ja) |
CA (1) | CA2973382A1 (ja) |
WO (1) | WO2016112301A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10819079B2 (en) * | 2015-01-09 | 2020-10-27 | Lsp Technologies, Inc. | Method and apparatus for use in laser shock peening |
US11858065B2 (en) | 2015-01-09 | 2024-01-02 | Lsp Technologies, Inc. | Method and system for use in laser shock peening and laser bond inspection process |
CN108780976A (zh) * | 2016-03-21 | 2018-11-09 | 鲁美斯有限公司 | 激光系统中的脉冲削波器 |
US10835111B2 (en) * | 2016-07-10 | 2020-11-17 | The Trustees Of Columbia University In The City Of New York | Three-dimensional imaging using swept, confocally aligned planar excitation with an image relay |
CN106119467B (zh) * | 2016-07-26 | 2018-06-12 | 广东工业大学 | 一种控制激光喷丸参数监控叶片表面粗糙度的方法和装置 |
JPWO2019012642A1 (ja) * | 2017-07-13 | 2020-05-07 | ギガフォトン株式会社 | レーザシステム |
WO2019209786A1 (en) * | 2018-04-23 | 2019-10-31 | Lsp Technologies, Inc. | Apparatus for laser peening hidden surfaces |
JP7144234B2 (ja) * | 2018-08-20 | 2022-09-29 | 株式会社Subaru | レーザピーニング加工装置及びレーザピーニング加工方法 |
EP3925727A4 (en) * | 2019-02-13 | 2022-11-23 | Inter-University Research Institute Corporation National Institutes of Natural Sciences | LASER TREATMENT DEVICE AND LASER TREATMENT METHOD |
US11638970B2 (en) * | 2019-09-24 | 2023-05-02 | Lawrence Livermore National Security, Llc | Enhanced material shock using spatiotemporal laser pulse formatting |
US11451004B2 (en) * | 2019-10-17 | 2022-09-20 | U.S. Department Of Energy | Downhole laser system with an improved laser output production and data collection |
JP2021132123A (ja) * | 2020-02-20 | 2021-09-09 | 株式会社エッジテック | レーザ加工装置。 |
CN115776923A (zh) * | 2020-03-09 | 2023-03-10 | 山东迈特莱斯金属表面科技有限公司 | 激光冲击喷丸过程中用于脉冲激光光束控制的装置和方法 |
WO2022019906A1 (en) * | 2020-07-22 | 2022-01-27 | Lsp Technologies, Inc. | Method and system for use in laser shock peening and laser bond inspection process |
US20240039237A1 (en) * | 2020-09-18 | 2024-02-01 | Arizona Board Of Regents On Behalf Of The University Of Arizona | Interleaved multi-pass optical amplifier |
CN114318195A (zh) * | 2020-09-30 | 2022-04-12 | 中信戴卡股份有限公司 | 一种无牺牲层的铝合金车轮的激光冲击延寿方法 |
CN113783084B (zh) * | 2021-09-10 | 2022-03-01 | 中国人民解放军国防科技大学 | 一种基于电磁驱动模式的半导体泵浦气体激光系统 |
Family Cites Families (83)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5181223A (en) | 1985-05-01 | 1993-01-19 | Spectra-Physics, Incorporated | High-efficiency mode-matched transversely-pumped solid state laser amplifier |
US5022033A (en) | 1989-10-30 | 1991-06-04 | The United States Of America As Represented By The United States Department Of Energy | Ring laser having an output at a single frequency |
ATE124465T1 (de) | 1990-01-11 | 1995-07-15 | Battelle Memorial Institute | Verbesserung von materialeigenschaften. |
JPH06505834A (ja) | 1991-02-28 | 1994-06-30 | バッテル メモリアル インスティチュート | レーザーシステム |
US5285310A (en) | 1992-01-21 | 1994-02-08 | Regents Of The University Of California | High power regenerative laser amplifier |
US5239408A (en) | 1992-01-21 | 1993-08-24 | Regents Of The University Of California | High power, high beam quality regenerative amplifier |
US5268787A (en) | 1993-02-17 | 1993-12-07 | Energy Compression Research Corp. | Multiple-pass method and apparatus for laser amplification |
US5329090A (en) | 1993-04-09 | 1994-07-12 | A B Lasers, Inc. | Writing on silicon wafers |
US5430748A (en) | 1994-01-21 | 1995-07-04 | Maccormack; Stuart | Laser system with phase-conjugator-enhanced output |
WO1995025821A1 (en) | 1994-03-22 | 1995-09-28 | Battelle Memorial Institute | Reducing edge effects of laser shock peening |
JPH0818169A (ja) * | 1994-06-28 | 1996-01-19 | Toshiba Corp | レーザ装置 |
JP2000077757A (ja) * | 1998-08-28 | 2000-03-14 | Hitachi Ltd | 光増幅器、光伝送装置および光伝送システム |
US5689363A (en) | 1995-06-12 | 1997-11-18 | The Regents Of The University Of California | Long-pulse-width narrow-bandwidth solid state laser |
US6057003A (en) | 1995-10-23 | 2000-05-02 | Lsp Technologies, Inc. | Peening process with reduction of dielectric breakdown to increase peak pressure pulse |
US5880877A (en) | 1997-01-28 | 1999-03-09 | Imra America, Inc. | Apparatus and method for the generation of high-power femtosecond pulses from a fiber amplifier |
US6198069B1 (en) * | 1998-08-13 | 2001-03-06 | The Regents Of The University Of California | Laser beam temporal and spatial tailoring for laser shock processing |
US6373876B1 (en) * | 1998-10-26 | 2002-04-16 | Lsp Technologies, Inc. | Single mode oscillator for a laser peening laser |
US6259055B1 (en) * | 1998-10-26 | 2001-07-10 | Lsp Technologies, Inc. | Apodizers for laser peening systems |
US6469275B2 (en) * | 1999-01-20 | 2002-10-22 | Lsp Technologies, Inc | Oblique angle laser shock processing |
US6197133B1 (en) | 1999-02-16 | 2001-03-06 | General Electric Company | Short-pulse high-peak laser shock peening |
US6700915B2 (en) | 1999-03-12 | 2004-03-02 | Lambda Physik Ag | Narrow band excimer laser with a resonator containing an optical element for making wavefront corrections |
US6075593A (en) * | 1999-08-03 | 2000-06-13 | General Electric Company | Method for monitoring and controlling laser shock peening using temporal light spectrum analysis |
US6384966B1 (en) | 1999-11-03 | 2002-05-07 | Time-Bandwidth Products Ag | Multiple pass optical amplifier with thermal birefringence compensation |
US6366308B1 (en) * | 2000-02-16 | 2002-04-02 | Ultratech Stepper, Inc. | Laser thermal processing apparatus and method |
JP2002057395A (ja) | 2000-08-07 | 2002-02-22 | Toshiba Corp | レーザ発振増幅装置 |
US6657160B2 (en) | 2001-01-25 | 2003-12-02 | The Regents Of The University Of California | Laser peening of components of thin cross-section |
US6775053B2 (en) * | 2001-04-12 | 2004-08-10 | The Regents Of The University Of California | High gain preamplifier based on optical parametric amplification |
US7065121B2 (en) * | 2001-07-24 | 2006-06-20 | Gsi Group Ltd. | Waveguide architecture, waveguide devices for laser processing and beam control, and laser processing applications |
US6831933B2 (en) | 2001-07-27 | 2004-12-14 | The University Of Chicago | Modular approach to the next generation, short wavelength, laser-like light sources |
JP4987199B2 (ja) * | 2001-09-05 | 2012-07-25 | 株式会社東芝 | 光伝送装置、レーザ光発生・伝送装置及びレーザ加工装置 |
US6818854B2 (en) | 2001-09-14 | 2004-11-16 | The Regents Of The University Of California | Laser peening with fiber optic delivery |
US6809307B2 (en) | 2001-09-28 | 2004-10-26 | Raytheon Company | System and method for effecting high-power beam control with adaptive optics in low power beam path |
US7006283B2 (en) * | 2002-01-15 | 2006-02-28 | Jds Uniphase Corporation | Three-dimensional optical amplifier structure |
GB2385460B (en) | 2002-02-18 | 2004-04-14 | Univ Southampton | "Pulsed light sources" |
US6750421B2 (en) * | 2002-02-19 | 2004-06-15 | Gsi Lumonics Ltd. | Method and system for laser welding |
JP2004207496A (ja) * | 2002-12-25 | 2004-07-22 | Nec Corp | 固体レーザ発振器 |
KR100525423B1 (ko) | 2003-01-06 | 2005-11-02 | 엘지전자 주식회사 | Dpss 레이저 |
US7158553B2 (en) | 2003-02-14 | 2007-01-02 | Lambda Physik Ag | Master oscillator/power amplifier excimer laser system with pulse energy and pointing control |
US7180918B2 (en) | 2003-05-16 | 2007-02-20 | Metal Improvement Company, Llc | Self-seeded single-frequency solid-state ring laser and system using same |
US7095772B1 (en) | 2003-05-22 | 2006-08-22 | Research Foundation Of The University Of Central Florida, Inc. | Extreme chirped/stretched pulsed amplification and laser |
US6917012B2 (en) | 2003-07-03 | 2005-07-12 | General Electric Company | Reducing electromagnetic feedback during laser shock peening |
ITMI20031675A1 (it) * | 2003-08-29 | 2005-02-28 | Cesi Ct Elettrotecnico Sperimen Tale Italiano | Oscillatore laser impulsato in singolo modo longitudinale |
US7770454B2 (en) * | 2003-09-26 | 2010-08-10 | Lsp Technologies, Inc. | Laser system and method for non-destructive bond detection and evaluation |
US7209500B2 (en) | 2003-10-30 | 2007-04-24 | Metal Improvement Company, Llc | Stimulated Brillouin scattering mirror system, high power laser and laser peening method and system using same |
ATE498928T1 (de) | 2003-10-30 | 2011-03-15 | Metal Improvement Company Llc | Relay teleskop, laserverstärker, und laserschockbestrahlungsverfahren und dessen vorrichtung |
US7110171B2 (en) * | 2003-10-30 | 2006-09-19 | Metal Improvement Company, Llc | Relay telescope including baffle, and high power laser amplifier utilizing the same |
US7291805B2 (en) | 2003-10-30 | 2007-11-06 | The Regents Of The University Of California | Target isolation system, high power laser and laser peening method and system using same |
EP1692749B1 (de) * | 2003-12-10 | 2008-02-13 | High Q Laser Production GmbH | Hochrepetierendes lasersystem zur erzeugung von ultrakurzen pulsen nach dem prinzip der puls-auskopplung |
US7511247B2 (en) * | 2004-03-22 | 2009-03-31 | Panasonic Corporation | Method of controlling hole shape during ultrafast laser machining by manipulating beam polarization |
US7750266B2 (en) * | 2004-11-17 | 2010-07-06 | Metal Improvement Company Llc | Active beam delivery system for laser peening and laser peening method |
US7851725B2 (en) | 2004-11-17 | 2010-12-14 | Metal Improvement Company Llc | Active beam delivery system with image relay |
US7718921B2 (en) | 2004-11-17 | 2010-05-18 | Metal Improvement Company Llc | Active beam delivery system with variable optical path segment through air |
US7508853B2 (en) | 2004-12-07 | 2009-03-24 | Imra, America, Inc. | Yb: and Nd: mode-locked oscillators and fiber systems incorporated in solid-state short pulse laser systems |
US7386019B2 (en) * | 2005-05-23 | 2008-06-10 | Time-Bandwidth Products Ag | Light pulse generating apparatus and method |
EP2148195A1 (en) * | 2005-07-07 | 2010-01-27 | Kabushiki Kaisha Toshiba | Laser-based apparatus for ultrasonic flaw detection |
US7430352B2 (en) | 2005-07-29 | 2008-09-30 | Aculight Corporation | Multi-segment photonic-crystal-rod waveguides for amplification of high-power pulsed optical radiation and associated method |
US7391561B2 (en) * | 2005-07-29 | 2008-06-24 | Aculight Corporation | Fiber- or rod-based optical source featuring a large-core, rare-earth-doped photonic-crystal device for generation of high-power pulsed radiation and method |
CN101496320B (zh) * | 2006-07-27 | 2012-07-18 | 伊雷克托科学工业股份有限公司 | 串接光放大器 |
JP2009246345A (ja) * | 2008-03-12 | 2009-10-22 | Komatsu Ltd | レーザシステム |
CN105583526B (zh) * | 2008-03-21 | 2018-08-17 | Imra美国公司 | 基于激光的材料加工方法和系统 |
US7817686B2 (en) * | 2008-03-27 | 2010-10-19 | Electro Scientific Industries, Inc. | Laser micromachining using programmable pulse shapes |
JP2010020285A (ja) * | 2008-03-28 | 2010-01-28 | Panasonic Corp | レーザ光源、画像表示装置、及び加工装置 |
US8526473B2 (en) * | 2008-03-31 | 2013-09-03 | Electro Scientific Industries | Methods and systems for dynamically generating tailored laser pulses |
CN101667709A (zh) * | 2008-09-04 | 2010-03-10 | 中国科学院西安光学精密机械研究所 | 可调谐高功率光纤皮秒激光系统 |
CN103698769A (zh) | 2008-11-17 | 2014-04-02 | 法罗技术股份有限公司 | 测量六个自由度的装置和方法 |
US8309885B2 (en) * | 2009-01-15 | 2012-11-13 | Electro Scientific Industries, Inc. | Pulse temporal programmable ultrafast burst mode laser for micromachining |
CN101499607B (zh) * | 2009-03-13 | 2011-01-19 | 深圳市明鑫激光技术有限公司 | 一种单频脉冲/连续双输出光纤激光器 |
US8896913B1 (en) | 2009-09-04 | 2014-11-25 | Lawrence Livermore National Security, Llc | Method and system for compact, multi-pass pulsed laser amplifier |
CN201570772U (zh) * | 2009-12-28 | 2010-09-01 | 昂纳信息技术(深圳)有限公司 | 一种阵列光纤放大器 |
US10072971B2 (en) * | 2010-04-16 | 2018-09-11 | Metal Improvement Company, Llc | Flexible beam delivery system for high power laser systems |
US8233511B2 (en) | 2010-05-18 | 2012-07-31 | Lawrence Livermore National Security, Llc | Method and system for modulation of gain suppression in high average power laser systems |
US8878095B2 (en) | 2010-12-17 | 2014-11-04 | Electro Scientific Industries, Inc. | Reducing back-reflection in laser micromachining systems |
US9144861B2 (en) * | 2011-06-03 | 2015-09-29 | Lsp Technologies, Inc. | Apparatus for laser peening hidden surfaces |
US9166355B2 (en) | 2011-09-12 | 2015-10-20 | Lawrence Livermore National Security, Llc | Directly driven source of multi-gigahertz, sub-picosecond optical pulses |
CN202512332U (zh) * | 2012-03-12 | 2012-10-31 | 苏州图森激光有限公司 | 一种全光纤超短激光脉冲放大器 |
CN102637990A (zh) * | 2012-04-25 | 2012-08-15 | 清华大学 | 一种光纤放大系统及其光纤放大方法 |
US9065241B2 (en) * | 2012-05-11 | 2015-06-23 | Massachusetts Institute Of Technology | Methods, systems, and apparatus for high energy optical-pulse amplification at high average power |
CN203014155U (zh) * | 2012-12-03 | 2013-06-19 | 广东汉唐量子光电科技有限公司 | 一种任意波形纳秒脉冲高保真放大装置 |
CN203800376U (zh) * | 2014-02-18 | 2014-08-27 | 南京先进激光技术研究院 | 输出频率可调的高功率皮秒激光器 |
US9744618B2 (en) * | 2014-05-22 | 2017-08-29 | Lsp Technologies, Inc. | Temporal pulse shaping for laser shock peening |
CN104201556A (zh) | 2014-09-17 | 2014-12-10 | 南京中科神光科技有限公司 | 一种高功率单纵模紫外全固态激光器 |
US10819079B2 (en) | 2015-01-09 | 2020-10-27 | Lsp Technologies, Inc. | Method and apparatus for use in laser shock peening |
US20210372881A1 (en) | 2018-10-01 | 2021-12-02 | Lsp Technologies, Inc. | Systems, methods and apparatuses for launching laser beams into multiple fibers and/or combining beams |
-
2016
- 2016-01-08 US US15/541,584 patent/US10819079B2/en active Active
- 2016-01-08 CA CA2973382A patent/CA2973382A1/en not_active Abandoned
- 2016-01-08 JP JP2017536859A patent/JP6772147B2/ja active Active
- 2016-01-08 WO PCT/US2016/012666 patent/WO2016112301A1/en active Application Filing
- 2016-01-08 CN CN201910851274.4A patent/CN110564937B/zh active Active
- 2016-01-08 EP EP19191239.3A patent/EP3588698B1/en active Active
- 2016-01-08 EP EP16735482.8A patent/EP3242768B8/en active Active
- 2016-01-08 CN CN201680003518.8A patent/CN107249809B/zh active Active
-
2020
- 2020-09-21 US US17/027,632 patent/US11955763B2/en active Active
- 2020-09-30 JP JP2020164558A patent/JP7038775B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
EP3242768A4 (en) | 2019-01-23 |
EP3242768B1 (en) | 2019-09-11 |
EP3588698A1 (en) | 2020-01-01 |
JP2018508981A (ja) | 2018-03-29 |
EP3588698B1 (en) | 2023-09-06 |
US20180001417A1 (en) | 2018-01-04 |
CN110564937B (zh) | 2021-03-26 |
US20210083446A1 (en) | 2021-03-18 |
CN107249809B (zh) | 2019-10-18 |
EP3242768B8 (en) | 2019-10-23 |
CN110564937A (zh) | 2019-12-13 |
CA2973382A1 (en) | 2016-07-14 |
JP2021010017A (ja) | 2021-01-28 |
WO2016112301A1 (en) | 2016-07-14 |
US10819079B2 (en) | 2020-10-27 |
EP3242768A1 (en) | 2017-11-15 |
US11955763B2 (en) | 2024-04-09 |
CN107249809A (zh) | 2017-10-13 |
JP7038775B2 (ja) | 2022-03-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7038775B2 (ja) | レーザ衝撃ピーニング処理において使用するための方法および装置 | |
US11273521B2 (en) | Method and apparatus for laser shock peening ballistic armor | |
JP5203573B2 (ja) | レーザ加工装置 | |
TWI658663B (zh) | 用於短脈衝雷射的任意觸發的增益控制 | |
US11858065B2 (en) | Method and system for use in laser shock peening and laser bond inspection process | |
US20050157382A1 (en) | Industrial directly diode-pumped ultrafast amplifier system | |
KR101272407B1 (ko) | 레이저 가공 장치, 레이저 광원 장치, 및, 레이저 광원 장치의 제어 방법 | |
KR20130051441A (ko) | 선택된 타겟 클래스를 위한 삼각 형상의 맞춤형 레이저 펄스를 이용하는 레이저 시스템 및 방법 | |
JP6456250B2 (ja) | レーザ装置およびレーザ加工機 | |
US20230098272A1 (en) | Method and apparatus for pulsed laser beam control in laser shock peening process | |
Šulc et al. | Yb: YAG/Cr: YAG composite crystal with external and microchip resonator | |
JP6571943B2 (ja) | レーザ光源装置及びレーザパルス光生成方法 | |
Mielke et al. | Pulse width stabilization for ultrafast laser systems | |
Büker et al. | High-pulse-energy Q-switched Ho3+: YAG laser | |
Nemec et al. | Passively Q-switched resonantly pumped Er: YAG laser | |
Schmitt et al. | Design and performance of a high-repetition-rate single-frequency Yb: YAG microlaser | |
WO2022019906A1 (en) | Method and system for use in laser shock peening and laser bond inspection process | |
Koehler et al. | Direct generation of femtosecond laser pulses with a peak power exceeding 18 MW without external amplification | |
Šulc et al. | Comparison of V: YAG and V: LuAG saturable absorbers for Nd: YAG 1338 nm microchip laser Q-switching | |
Wang et al. | Tunable injection-seeded Nd: GSAG laser at 943nm for water vapor detection | |
WO2005069452A2 (en) | Industrial directly diode-pumped ultrafast amplifier system |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181214 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200204 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200416 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200901 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200930 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6772147 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |