JP6770958B2 - ランドスケープの解析および利用 - Google Patents

ランドスケープの解析および利用 Download PDF

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Publication number
JP6770958B2
JP6770958B2 JP2017528095A JP2017528095A JP6770958B2 JP 6770958 B2 JP6770958 B2 JP 6770958B2 JP 2017528095 A JP2017528095 A JP 2017528095A JP 2017528095 A JP2017528095 A JP 2017528095A JP 6770958 B2 JP6770958 B2 JP 6770958B2
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Japan
Prior art keywords
measurement
landscape
overlay
target
pupil
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JP2017528095A
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English (en)
Japanese (ja)
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JP2017537317A (ja
JP2017537317A5 (OSRAM
Inventor
タル マルチアーノ
タル マルチアーノ
バラク ブリンゴルツ
バラク ブリンゴルツ
エフゲニー グレヴィッチ
エフゲニー グレヴィッチ
イド アダム
イド アダム
ザエフ リンデンフェルド
ザエフ リンデンフェルド
ゼン ジャオ
ゼン ジャオ
ヨエル フェレル
ヨエル フェレル
ダニエル カンデル
ダニエル カンデル
ナダフ カルメル
ナダフ カルメル
アムノン マナッセン
アムノン マナッセン
ヌリエル アミル
ヌリエル アミル
オデド カミンスキー
オデド カミンスキー
タル ヤジフ
タル ヤジフ
オフェル ザハラン
オフェル ザハラン
モシェ クーパー
モシェ クーパー
ロエー スリマルスキー
ロエー スリマルスキー
トム レヴィアント
トム レヴィアント
ノガ セラ
ノガ セラ
ボリス エフラティ
ボリス エフラティ
リラク サルトーン
リラク サルトーン
アミル ハンデルマン
アミル ハンデルマン
エルサフォン アシュワル
エルサフォン アシュワル
オハド バチャール
オハド バチャール
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KLA Corp
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KLA Corp
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Publication of JP2017537317A5 publication Critical patent/JP2017537317A5/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
JP2017528095A 2014-11-25 2015-11-24 ランドスケープの解析および利用 Active JP6770958B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462083891P 2014-11-25 2014-11-25
US62/083,891 2014-11-25
US201562100384P 2015-01-06 2015-01-06
US62/100,384 2015-01-06
PCT/US2015/062523 WO2016086056A1 (en) 2014-11-25 2015-11-24 Analyzing and utilizing landscapes

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020162494A Division JP7023337B2 (ja) 2014-11-25 2020-09-28 測定方法

Publications (3)

Publication Number Publication Date
JP2017537317A JP2017537317A (ja) 2017-12-14
JP2017537317A5 JP2017537317A5 (OSRAM) 2019-01-10
JP6770958B2 true JP6770958B2 (ja) 2020-10-21

Family

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Family Applications (3)

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JP2017528095A Active JP6770958B2 (ja) 2014-11-25 2015-11-24 ランドスケープの解析および利用
JP2020162494A Active JP7023337B2 (ja) 2014-11-25 2020-09-28 測定方法
JP2022018205A Pending JP2022065040A (ja) 2014-11-25 2022-02-08 測定方法

Family Applications After (2)

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JP2020162494A Active JP7023337B2 (ja) 2014-11-25 2020-09-28 測定方法
JP2022018205A Pending JP2022065040A (ja) 2014-11-25 2022-02-08 測定方法

Country Status (8)

Country Link
US (1) US10831108B2 (OSRAM)
JP (3) JP6770958B2 (OSRAM)
KR (1) KR102269514B1 (OSRAM)
CN (2) CN107078074B (OSRAM)
IL (1) IL251972B (OSRAM)
SG (1) SG11201703585RA (OSRAM)
TW (2) TWI711096B (OSRAM)
WO (1) WO2016086056A1 (OSRAM)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016040306A1 (en) 2014-09-08 2016-03-17 The Research Foundation Of State University Of New York Metallic gratings and measurement methods thereof
KR102294349B1 (ko) 2014-11-26 2021-08-26 에이에스엠엘 네델란즈 비.브이. 계측 방법, 컴퓨터 제품 및 시스템
CN107636538B (zh) 2015-05-19 2021-02-19 科磊股份有限公司 用于叠加测量的形貌相位控制
US9995689B2 (en) * 2015-05-22 2018-06-12 Nanometrics Incorporated Optical metrology using differential fitting
NL2016937A (en) 2015-06-17 2016-12-22 Asml Netherlands Bv Recipe selection based on inter-recipe consistency
CN108369087B (zh) 2015-12-08 2021-04-30 科磊股份有限公司 使用偏振目标及偏振照明以控制衍射级的振幅及相位
CN109073980B (zh) 2015-12-17 2021-06-18 Asml荷兰有限公司 量测设备的调节或基于已测量目标的特性而由量测设备进行的测量
TWI731038B (zh) 2016-02-24 2021-06-21 美商克萊譚克公司 光學計量之準確度提升
WO2017146785A1 (en) 2016-02-25 2017-08-31 Kla-Tencor Corporation Analyzing root causes of process variation in scatterometry metrology
WO2017144270A1 (en) 2016-02-26 2017-08-31 Asml Netherlands B.V. Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method
KR102238466B1 (ko) 2016-04-22 2021-04-09 에이에스엠엘 네델란즈 비.브이. 스택 차이의 결정 및 스택 차이를 사용한 정정 기술
CN109154786B (zh) * 2016-05-17 2020-12-04 Asml荷兰有限公司 基于贯穿波长的相似性的度量强健性
KR102221760B1 (ko) 2016-07-15 2021-03-04 에이에스엠엘 네델란즈 비.브이. 메트롤로지 타겟 필드의 디자인을 위한 장치 및 방법
US10578982B2 (en) 2016-08-17 2020-03-03 Asml Netherlands B.V. Substrate measurement recipe design of, or for, a target including a latent image
EP3299890A1 (en) * 2016-09-27 2018-03-28 ASML Netherlands B.V. Metrology recipe selection
JP6855565B2 (ja) 2016-09-27 2021-04-07 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジレシピ選択
US10897566B2 (en) 2016-09-28 2021-01-19 Kla-Tencor Corporation Direct focusing with image binning in metrology tools
US10527952B2 (en) * 2016-10-25 2020-01-07 Kla-Tencor Corporation Fault discrimination and calibration of scatterometry overlay targets
WO2018087207A1 (en) * 2016-11-10 2018-05-17 Asml Netherlands B.V. Design and correction using stack difference
US10331050B2 (en) 2016-11-14 2019-06-25 Kla-Tencor Corporation Lithography systems with integrated metrology tools having enhanced functionalities
US10496781B2 (en) * 2016-12-19 2019-12-03 Kla Tencor Corporation Metrology recipe generation using predicted metrology images
US10824079B2 (en) * 2017-01-03 2020-11-03 Kla-Tencor Corporation Diffraction based overlay scatterometry
FR3062516B1 (fr) 2017-01-30 2019-04-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mesure du desalignement entre une premiere et une seconde zones de gravure
CN110622287B (zh) * 2017-05-22 2023-11-03 科磊股份有限公司 用于配方优化及测量的区域分析
WO2018228820A1 (en) 2017-06-14 2018-12-20 Asml Netherlands B.V. Lithographic apparatus and method
US11112369B2 (en) * 2017-06-19 2021-09-07 Kla-Tencor Corporation Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay
CN110870052B (zh) 2017-07-06 2021-09-10 科磊股份有限公司 在成像技术中估计振幅及相位不对称性以在叠加计量中达到高精准度
US10401738B2 (en) 2017-08-02 2019-09-03 Kla-Tencor Corporation Overlay metrology using multiple parameter configurations
JP6942555B2 (ja) * 2017-08-03 2021-09-29 東京エレクトロン株式会社 基板処理方法、コンピュータ記憶媒体及び基板処理システム
US10627720B2 (en) 2017-08-18 2020-04-21 Globalfoundries Inc. Overlay mark structures
US10699969B2 (en) 2017-08-30 2020-06-30 Kla-Tencor Corporation Quick adjustment of metrology measurement parameters according to process variation
CN111052328B (zh) * 2017-08-30 2021-08-03 科磊股份有限公司 根据工艺变化的计量测量参数的快速调整
EP3462239A1 (en) * 2017-09-27 2019-04-03 ASML Netherlands B.V. Metrology in lithographic processes
KR102390687B1 (ko) 2017-09-11 2022-04-26 에이에스엠엘 네델란즈 비.브이. 리소그래피 프로세스들에서의 계측
US10565697B2 (en) * 2017-10-22 2020-02-18 Kla-Tencor Corporation Utilizing overlay misregistration error estimations in imaging overlay metrology
US11199506B2 (en) * 2018-02-21 2021-12-14 Applied Materials Israel Ltd. Generating a training set usable for examination of a semiconductor specimen
WO2019182637A1 (en) 2018-03-19 2019-09-26 Kla-Tencor Corporation Overlay measurement using multiple wavelengths
US12416580B2 (en) * 2018-05-07 2025-09-16 Unm Rainforest Innovations Method and system for in-line optical scatterometry
KR102586405B1 (ko) * 2018-06-14 2023-10-10 노바 엘티디. 반도체 제조용 측정 및 공정 제어
US10962951B2 (en) 2018-06-20 2021-03-30 Kla-Tencor Corporation Process and metrology control, process indicators and root cause analysis tools based on landscape information
NL2021852A (en) 2018-08-01 2018-11-09 Asml Netherlands Bv Metrology apparatus and method for determining a characteristic of one or more structures on a substrate
US11410111B1 (en) * 2018-08-08 2022-08-09 Wells Fargo Bank, N.A. Generating predicted values based on data analysis using machine learning
US11118903B2 (en) * 2018-10-17 2021-09-14 Kla Corporation Efficient illumination shaping for scatterometry overlay
JP7431824B2 (ja) * 2018-11-21 2024-02-15 ケーエルエー コーポレイション スキャトロメトリオーバーレイ（ｓｃｏｌ）測定方法及びｓｃｏｌ測定システム
WO2020106335A1 (en) 2018-11-21 2020-05-28 Kla-Tencor Corporation Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)
US11062928B2 (en) 2019-10-07 2021-07-13 Kla Corporation Process optimization using design of experiments and response surface models
WO2020123014A1 (en) 2018-12-14 2020-06-18 Kla Corporation Per-site residuals analysis for accurate metrology measurements
US11333982B2 (en) * 2019-01-28 2022-05-17 Kla Corporation Scaling metric for quantifying metrology sensitivity to process variation
JP7153147B2 (ja) * 2019-02-22 2022-10-13 ケーエルエー コーポレイション 半導体デバイスの位置ずれ測定方法及び装置
US20220244649A1 (en) * 2019-07-04 2022-08-04 Asml Netherlands B.V. Sub-field control of a lithographic process and associated apparatus
CN114097066A (zh) * 2019-07-10 2022-02-25 科磊股份有限公司 数据驱动的错位参数配置与测量的系统及方法
US11360397B2 (en) * 2019-09-17 2022-06-14 Kla Corporation System and method for application of harmonic detectivity as a quality indicator for imaging-based overlay measurements
WO2021073854A1 (en) * 2019-10-14 2021-04-22 Asml Holding N.V. Metrology mark structure and method of determining metrology mark structure
US12399120B2 (en) 2019-11-01 2025-08-26 Unm Rainforest Innovations In-line angular optical multi-point scatterometry for nanomanufacturing systems
WO2021107986A1 (en) * 2019-11-28 2021-06-03 Kla Corporation Systems and methods for metrology optimization based on metrology landscapes
US11688616B2 (en) 2020-07-22 2023-06-27 Applied Materials, Inc. Integrated substrate measurement system to improve manufacturing process performance
US12283503B2 (en) * 2020-07-22 2025-04-22 Applied Materials, Inc. Substrate measurement subsystem
USD977504S1 (en) 2020-07-22 2023-02-07 Applied Materials, Inc. Portion of a display panel with a graphical user interface
US11454894B2 (en) * 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
US20220357674A1 (en) * 2021-05-04 2022-11-10 Kla Corporation Oblique illumination for overlay metrology
US12406891B2 (en) 2021-09-30 2025-09-02 International Business Machines Corporation Characterization of asymmetric material deposition for metrology
WO2023096704A1 (en) * 2021-11-27 2023-06-01 Kla Corporation Improved targets for diffraction-based overlay error metrology
US12235624B2 (en) 2021-12-21 2025-02-25 Applied Materials, Inc. Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing
US12339645B2 (en) 2022-01-25 2025-06-24 Applied Materials, Inc. Estimation of chamber component conditions using substrate measurements
US12148647B2 (en) 2022-01-25 2024-11-19 Applied Materials, Inc. Integrated substrate measurement system
US12216455B2 (en) 2022-01-25 2025-02-04 Applied Materials, Inc. Chamber component condition estimation using substrate measurements
CN115327857A (zh) * 2022-05-30 2022-11-11 上海华力集成电路制造有限公司 一种量测方法、激光套刻装置、计算机存储介质及模组
IL293633B2 (en) * 2022-06-06 2024-06-01 Nova Ltd A system and method for building a library and using it in measurements on designed buildings
US12092966B2 (en) * 2022-11-23 2024-09-17 Kla Corporation Device feature specific edge placement error (EPE)
US20240337953A1 (en) * 2023-04-04 2024-10-10 Kla Corporation System and method for tracking real-time position for scanning overlay metrology
US12504697B2 (en) 2023-06-02 2025-12-23 Kla Corporation Single grab pupil landscape via broadband illumination
EP4538794A1 (en) * 2023-10-13 2025-04-16 ASML Netherlands B.V. Metrology method and associated metrology device

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7330279B2 (en) * 2002-07-25 2008-02-12 Timbre Technologies, Inc. Model and parameter selection for optical metrology
US7352453B2 (en) 2003-01-17 2008-04-01 Kla-Tencor Technologies Corporation Method for process optimization and control by comparison between 2 or more measured scatterometry signals
KR101665168B1 (ko) 2005-11-18 2016-10-11 케이엘에이-텐코 코포레이션 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템
US7528941B2 (en) 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
US7573584B2 (en) 2006-09-25 2009-08-11 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7656518B2 (en) 2007-03-30 2010-02-02 Asml Netherlands B.V. Method of measuring asymmetry in a scatterometer, a method of measuring an overlay error in a substrate and a metrology apparatus
NL2006700A (en) * 2010-06-04 2011-12-06 Asml Netherlands Bv Method and apparatus for measuring a structure on a substrate, computer program products for implementing such methods & apparatus.
WO2012010458A1 (en) * 2010-07-19 2012-01-26 Asml Netherlands B.V. Method and apparatus for determining an overlay error
US8666703B2 (en) * 2010-07-22 2014-03-04 Tokyo Electron Limited Method for automated determination of an optimally parameterized scatterometry model
NL2007765A (en) 2010-11-12 2012-05-15 Asml Netherlands Bv Metrology method and inspection apparatus, lithographic system and device manufacturing method.
KR101943593B1 (ko) 2011-04-06 2019-01-30 케이엘에이-텐코 코포레이션 공정 제어를 개선하기 위한 품질 메트릭 제공 방법 및 시스템
US9310296B2 (en) * 2011-06-20 2016-04-12 Kla-Tencor Corporation Optimizing an optical parametric model for structural analysis using optical critical dimension (OCD) metrology
US8681413B2 (en) 2011-06-27 2014-03-25 Kla-Tencor Corporation Illumination control
NL2009294A (en) 2011-08-30 2013-03-04 Asml Netherlands Bv Method and apparatus for determining an overlay error.
US20130110477A1 (en) * 2011-10-31 2013-05-02 Stilian Pandev Process variation-based model optimization for metrology
US10255385B2 (en) * 2012-03-28 2019-04-09 Kla-Tencor Corporation Model optimization approach based on spectral sensitivity
US9329033B2 (en) * 2012-09-05 2016-05-03 Kla-Tencor Corporation Method for estimating and correcting misregistration target inaccuracy
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
NL2011726A (en) * 2012-11-05 2014-05-08 Asml Netherlands Bv Method and apparatus for measuring asymmetry of a microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method.
US10242290B2 (en) 2012-11-09 2019-03-26 Kla-Tencor Corporation Method, system, and user interface for metrology target characterization
NL2011816A (en) 2012-11-30 2014-06-04 Asml Netherlands Bv Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method.
US9341769B2 (en) 2012-12-17 2016-05-17 Kla-Tencor Corporation Spectral control system
US9512985B2 (en) 2013-02-22 2016-12-06 Kla-Tencor Corporation Systems for providing illumination in optical metrology
KR102094652B1 (ko) * 2013-03-04 2020-03-30 케이엘에이 코포레이션 계측 타겟의 식별, 디자인 및 검증
US9909982B2 (en) * 2013-03-08 2018-03-06 Kla-Tencor Corporation Pupil plane calibration for scatterometry overlay measurement
WO2014138522A1 (en) * 2013-03-08 2014-09-12 Kla-Tencor Corporation Pupil plane calibration for scatterometry overlay measurement
CN105452962B (zh) * 2013-08-07 2018-02-09 Asml荷兰有限公司 量测方法和设备、光刻系统和器件制造方法
WO2015031337A1 (en) * 2013-08-27 2015-03-05 Kla-Tencor Corporation Removing process-variation-related inaccuracies from scatterometry measurements
US9518916B1 (en) * 2013-10-18 2016-12-13 Kla-Tencor Corporation Compressive sensing for metrology
CN105830069B (zh) * 2013-12-11 2021-04-20 科磊股份有限公司 依据要求的目标及工艺灵敏度分析
US10365230B1 (en) * 2014-03-19 2019-07-30 Kla-Tencor Corporation Scatterometry overlay based on reflection peak locations
US9851300B1 (en) * 2014-04-04 2017-12-26 Kla-Tencor Corporation Decreasing inaccuracy due to non-periodic effects on scatterometric signals
WO2016037003A1 (en) * 2014-09-03 2016-03-10 Kla-Tencor Corporation Optimizing the utilization of metrology tools
WO2016123552A1 (en) * 2015-01-30 2016-08-04 Kla-Tencor Corporation Device metrology targets and methods
US9903711B2 (en) * 2015-04-06 2018-02-27 KLA—Tencor Corporation Feed forward of metrology data in a metrology system
CN108369087B (zh) * 2015-12-08 2021-04-30 科磊股份有限公司 使用偏振目标及偏振照明以控制衍射级的振幅及相位

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US10831108B2 (en) 2020-11-10
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TW201633419A (zh) 2016-09-16
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SG11201703585RA (en) 2017-06-29
CN112698551B (zh) 2024-04-23
JP7023337B2 (ja) 2022-02-21
CN107078074A (zh) 2017-08-18
JP2020201293A (ja) 2020-12-17
IL251972B (en) 2022-03-01
WO2016086056A1 (en) 2016-06-02
US20160313658A1 (en) 2016-10-27
TW202018836A (zh) 2020-05-16
KR20170088403A (ko) 2017-08-01
IL251972A0 (en) 2017-06-29
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