JP6768115B2 - 研磨用組成物およびそれを用いた研磨方法 - Google Patents
研磨用組成物およびそれを用いた研磨方法 Download PDFInfo
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- JP6768115B2 JP6768115B2 JP2019096990A JP2019096990A JP6768115B2 JP 6768115 B2 JP6768115 B2 JP 6768115B2 JP 2019096990 A JP2019096990 A JP 2019096990A JP 2019096990 A JP2019096990 A JP 2019096990A JP 6768115 B2 JP6768115 B2 JP 6768115B2
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- 150000002500 ions Chemical class 0.000 description 1
- 229940045996 isethionic acid Drugs 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- LDHQCZJRKDOVOX-IHWYPQMZSA-N isocrotonic acid Chemical compound C\C=C/C(O)=O LDHQCZJRKDOVOX-IHWYPQMZSA-N 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 238000002356 laser light scattering Methods 0.000 description 1
- 229960004488 linolenic acid Drugs 0.000 description 1
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 150000002689 maleic acids Chemical class 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 150000002691 malonic acids Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- BEGLCMHJXHIJLR-UHFFFAOYSA-N methylisothiazolinone Chemical compound CN1SC=CC1=O BEGLCMHJXHIJLR-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- 229940094933 n-dodecane Drugs 0.000 description 1
- NZZGQZMNFCTNAM-UHFFFAOYSA-N naphthalene-2,6-dicarbonyl chloride Chemical compound C1=C(C(Cl)=O)C=CC2=CC(C(=O)Cl)=CC=C21 NZZGQZMNFCTNAM-UHFFFAOYSA-N 0.000 description 1
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- LJDZFAPLPVPTBD-UHFFFAOYSA-N nitroformic acid Chemical class OC(=O)[N+]([O-])=O LJDZFAPLPVPTBD-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- SFBTTWXNCQVIEC-UHFFFAOYSA-N o-Vinylanisole Chemical compound COC1=CC=CC=C1C=C SFBTTWXNCQVIEC-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- UCUUFSAXZMGPGH-UHFFFAOYSA-N penta-1,4-dien-3-one Chemical compound C=CC(=O)C=C UCUUFSAXZMGPGH-UHFFFAOYSA-N 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 125000005385 peroxodisulfate group Chemical group 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 229940044654 phenolsulfonic acid Drugs 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- RAJUSMULYYBNSJ-UHFFFAOYSA-N prop-1-ene-1-sulfonic acid Chemical compound CC=CS(O)(=O)=O RAJUSMULYYBNSJ-UHFFFAOYSA-N 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910001388 sodium aluminate Inorganic materials 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- 229960004025 sodium salicylate Drugs 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 235000011044 succinic acid Nutrition 0.000 description 1
- 150000003444 succinic acids Chemical class 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000002130 sulfonic acid ester group Chemical group 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229960003080 taurine Drugs 0.000 description 1
- LXEJRKJRKIFVNY-UHFFFAOYSA-N terephthaloyl chloride Chemical compound ClC(=O)C1=CC=C(C(Cl)=O)C=C1 LXEJRKJRKIFVNY-UHFFFAOYSA-N 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- OFBPGACXRPVDQW-UHFFFAOYSA-N thiirane 1,1-dioxide Chemical class O=S1(=O)CC1 OFBPGACXRPVDQW-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- ZTWTYVWXUKTLCP-UHFFFAOYSA-N vinylphosphonic acid Chemical compound OP(O)(=O)C=C ZTWTYVWXUKTLCP-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/10—Metal compounds
- C08K3/14—Carbides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
Q1’は、単結合、エーテル結合、エステル結合、アミド結合、カルボニル結合のいずれかであり、
xは、0〜10の整数であり、
yは、0〜10の整数であり、
Xは、スルホン酸基、カルボキシル基、ヒドロキシル基、もしくはリン酸基から選択される酸性基、またはこれらの酸性基を少なくとも1つ有する炭素数1〜10の脂肪族炭化水素基、もしくは前記酸性基を少なくとも1つ有する炭素数6〜12の芳香族炭化水素基である。)
Q2は、単結合、エーテル結合、エステル結合、アミド結合、カルボニル結合のいずれかであり、
xは、0〜10の整数であり、
yは、0〜10の整数であり、
Yは、スルホン酸基、カルボキシル基、ヒドロキシル基、もしくはリン酸基から選択される酸性基、またはこれらの酸性基を少なくとも1つ有する炭素数1〜10の脂肪族炭化水素基、もしくは前記酸性基を少なくとも1つ有する炭素数6〜12の芳香族炭化水素基である。)
本発明の第一は、研磨する際に使用される研磨用組成物のpH領域において表面が正に帯電する研磨対象物を研磨する用途で用いられ、砥粒、上記一般式1で表される単位構造または上記一般式2で表される単位構造を有するアニオン性共重合体を含み、pHが6未満である研磨用組成物である。このような構成とすることにより、凹凸を有するSiN膜を含むパターンウェハの凸部を高選択的に削り取ることができ、よってパターンウェハの段差を十分に解消することができる。
本発明に係る研磨用組成物中に含まれるアニオン性共重合体は、酸性度が異なる2種類以上の酸性基を有し、好ましくは2種類の酸性度が異なる酸性基を有し、より好ましくは研磨用組成物のpHに対して高い酸解離定数の酸性基と、研磨用組成物のpHに対して低い酸解離定数の酸性基とを併有する。酸性度が異なる2種類以上の酸性基を有していれば、該アニオン性共重合体は、単位構造が、すべて一般式1または一般式2のいずれか一方のみで表されても、一般式1で表される構造単位と一般式2で表される単位構造との両方を有していてもよい。XおよびYは、構造が同一の酸性基であってもよい。また、前記アニオン性共重合体は、3種類以上の単位構造を有していてもよい。
Q1’は、単結合、エーテル結合、エステル結合、アミド結合、カルボニル結合のいずれかであり、
xは、0〜10の整数であり、
yは、0〜10の整数であり、
Xは、スルホン酸基、カルボキシル基、ヒドロキシル基、もしくはリン酸基から選択される酸性基、またはこれらの酸性基を少なくとも1つ有する炭素数1〜10の脂肪族炭化水素基、もしくは前記酸性基を少なくとも1つ有する炭素数6〜12の芳香族炭化水素基である。)
Q2は、単結合、エーテル結合、エステル結合、アミド結合、カルボニル結合のいずれかであり、
xは、0〜10の整数であり、
yは、0〜10の整数であり、
Yは、スルホン酸基、カルボキシル基、ヒドロキシル基、もしくはリン酸基から選択される酸性基、またはこれらの酸性基を少なくとも1つ有する炭素数1〜10の脂肪族炭化水素基、もしくは前記酸性基を少なくとも1つ有する炭素数6〜12の芳香族炭化水素基である。)
また単結合とは、共有電子対1組を共有することによる結合を示すため、Q1’またはQ2が、単結合を表すとき、Q1’またはQ2に炭素原子等の原子は含まれず、Q1’またはQ2の両隣りの原子が互いに単結合で結合していることを意味する。
本発明に係る研磨用組成物が含有するアニオン性共重合体は、従来公知の方法で合成することができ、例えば、以下のような方法によって製造することができる。
上記のアニオン性基を導入し得るモノマーとしては、例えばエチレングリコールまたはポリエチレングリコールのジアクリル酸エステルもしくはジメタクリル酸エステル、スチレン、ビニルトルエン、ビニルスルホン、ビニルナフタレン等が挙げられる。
この方法においては、必要により、イオン性基を有していないモノマーを共重合させたり、あるいは得られた共重合体中のカルボン酸エステル基、スルホン酸エステル基を加水分解させたりしてイオン交換容量(カチオン交換容量)を調製することもできる。
この方法において、アニオン性基を有するフェノール類としては、フェノールスルホン酸、ナフトールスルホン酸、p−オキシベンゼンスルホン酸、サリチル酸ソーダ等を例示することができる。また、アルデヒド類としては、ホルマリン、パラホルムアルデヒド、グリオキサザール、フルフラール類などが使用される。この場合、カチオン交換容量を調整するために、フェノール、クレゾール、ナフトール、レゾール等を共重合成分として使用することもできる。
この方法においては、例えば、2,6−ナフタレンジカルボン酸またはそのエステル形成性誘導体、イソフタル酸またはそのエステル形成性誘導体および5−ナトリウムスルホイソフタル酸またはそのエステル形成性誘導体を、テトラメチレングリコール、9,9−ビス[4−(2−ヒドロキシエトキシ)フェニル]フルオレン、ビスフェノールAエチレンオキサイド付加体成分と反応させてモノマーもしくはオリゴマーを形成し、その後真空下で重縮合させることによってポリエステルを調製できる。このようにして合成したポリ
エステルに後から酸性基を導入してもよく、あらかじめ酸性基に変換しうる置換基をモノマーに導入しておき、縮合重合後に酸性基に変換してもよい。
この方法においては、使用し得る酸性基含有芳香族ジハライドとして、4,4’−ジクロロジフェニルスルホン、4,4’−ジフルオロジフェニルスルホン、4,4’−ジクロロジフェニルケトン、4,4’−ジクロロジフェニルフェニルホスフィンオキシド、4,4’−ジフルオロジフェニルフェニルホスフィンオキシド等を挙げることができる。
この方法において使用し得るジカルボン酸ジハライドとしては、例えば、テレフタル酸クロライド、2−クロルテレフタル酸クロライド、2,5−ジクロルテレフタル酸クロライド、2,6−ジクロルテレフタル酸クロライド、2,6−ナフタレンジカルボン酸クロライドがあげられ、使用し得るジアミンとしてはp−フェニレンジアミン、2−クロルp−フェニレンジアミン、2,5−ジクロルp−フェニレンジアミン、2,6−ジクロルp−フェニレンジアミン、m−フェニレンジアミン、3,4’−ジアミノジフェニルエーテル、4,4’−ジアミノジフェニルエーテル、4,4’−ジアミノジフェニルメタン、4,4’−ジアミノジフェニルスルホン、3,3’−ジアミノジフェニルスルホンなどの芳香族ジアミンなどが挙げられる。
本発明に係る研磨用組成物中に含まれる砥粒は、研磨対象物を機械的に研磨する作用を有し、研磨用組成物による研磨対象物の研磨速度を向上させる。
本発明の研磨用組成物のpHの値は、6未満である。pHの値が6以上であると、窒化ケイ素といった研磨対象物の表面の正の電荷が小さくなるため、表面が負に帯電した砥粒を用いて研磨対象物を高速度で研磨することも困難になる。研磨用組成物により窒化ケイ素などの研磨対象物を十分な研磨速度で研磨する観点から、研磨用組成物のpHの値は、好ましくは5以下、さらに好ましくは4以下であり、特に好ましくは3以下である。
本発明の研磨用組成物は、水を含む。不純物による研磨用組成物の他の成分への影響を防ぐ観点から、できる限り高純度な水を使用することが好ましい。具体的には、イオン交換樹脂にて不純物イオンを除去した後フィルタを通して異物を除去した純水や超純水、または蒸留水が好ましい。また、分散媒または溶媒として、研磨用組成物の他の成分の分散性などを制御する目的で、有機溶媒などをさらに含んでもよい。
本発明の研磨用組成物は、必要に応じて、錯化剤、金属防食剤、防腐剤、防カビ剤、酸化剤、還元剤、界面活性剤、水溶性高分子等の他の成分をさらに含んでもよい。以下、酸化剤、防腐剤、防カビ剤、水溶性高分子について説明する。
研磨用組成物に添加し得る酸化剤は、研磨対象物の表面を酸化する作用を有し、研磨用組成物による研磨対象物の研磨速度を向上させる。
本発明に係る研磨用組成物に添加し得る防腐剤および防カビ剤としては、例えば、2−メチル−4−イソチアゾリン−3−オンや5−クロロ−2−メチル−4−イソチアゾリン−3−オン等のイソチアゾリン系防腐剤、パラオキシ安息香酸エステル類、及びフェノキシエタノール等が挙げられる。これら防腐剤および防カビ剤は、単独でもまたは2種以上混合して用いてもよい。
本発明に係る研磨用組成物には、研磨対象物表面の親水性を向上させることや砥粒の分散安定性を向上させることを目的として水溶性高分子を添加してもよい。水溶性高分子としては、ヒドロキシメチルセルロース、ヒドロキシエチルセルロース(HEC)、ヒドロキシプロピルセルロース、ヒドロキシエチルメチルセルロース、ヒドロキシプロピルメチルセルロース、メチルセルロース、エチルセルロース、エチルヒドロキシエチルセルロース、カルボキシメチルセルロース等のセルロース誘導体;ポリ(N−アシルアルキレンイミン)等のイミン誘導体;ポリビニルアルコール;変性(カチオン変性、またはノニオン変性)ポリビニルアルコール;ポリビニルピロリドン;ポリビニルカプロラクタム;ポリオキシエチレン等のポリオキシアルキレン等;並びにこれらの構成単位を含む共重合体が挙げられる。これら水溶性高分子は、単独で用いても、2種以上を混合して用いてもよい。
本発明の研磨用組成物の製造方法は、特に制限されず、例えば、砥粒、上記一般式1で表される単位構造または上記一般式2で表される単位構造を有するアニオン性共重合体、pH調整剤、水および必要に応じて他の成分を、攪拌混合して得ることができる。
本発明の被研磨材料は、pHが6未満の条件で表面が正に帯電する研磨対象物であれば、特に制限されず、例えば、窒化ケイ素等の窒化物、アルミニウム−マグネシウム、シリコン−ゲルマニウム等の合金、またはこれらの複合材料などの研磨対象物を含む被研磨材料が挙げられる。これら研磨対象物は、単独でもまたは2種以上の組み合わせであってもよい。なお、研磨対象物は、単層構造でもよいし2種以上の多層構造であってもよい。多層構造の場合、各層は同じ材料を含んでもよいし、異なる材料を含んでもよい。
上述のように、本発明の研磨用組成物は、窒化ケイ素などのpHが6未満の条件で表面が正に帯電する研磨対象物の研磨に好適に用いられる。よって、本発明の第二は、pHが6未満の条件で表面が正に帯電する研磨対象物を本発明の研磨用組成物を用いて研磨する研磨方法である。また、本発明の第三は、pHが6未満の条件で表面が正に帯電する研磨対象物を前記研磨方法で研磨する工程を含む基板の製造方法である。
砥粒として表1に示したコロイダルシリカ、およびアニオン性共重合体を表3に示す量、水中で混合し、pH調整剤でpHを調整し、研磨用組成物を得た(混合温度約25℃、混合時間:約10分)。研磨用組成物のpHは、pHメーターにより確認した。
研磨速度の測定結果を下記表3に示す。なお、表3中の研磨速度比は、凸部の研磨速度を凹部の研磨速度で除すことにより算出される値である。
Claims (3)
- pHが6未満の条件で表面が正に帯電する窒化ケイ素を含む研磨対象物を研磨する用途で用いられ、
水と、
pHが6未満において表面が負に帯電しているコロイダルシリカと、
スチレンスルホン酸−マレイン酸共重合体、スチレンスルホン酸−メタクリル酸共重合体、およびビニルスルホン酸−アクリル酸共重合体からなる群より選択される少なくとも1種のアニオン性共重合体と、
を含み、pHが2以上6未満である、研磨用組成物。 - 請求項1に記載の研磨用組成物を用いて、pHが6未満の条件で表面が正に帯電した窒化ケイ素を含む研磨対象物表面の凸部を凹部に対して10倍以上の研磨速度で研磨する工程を有する、研磨方法。
- 請求項2に記載の研磨方法で研磨する工程を含む、基板の製造方法。
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