JP6760684B2 - Insulation material and printed circuit board containing it - Google Patents

Insulation material and printed circuit board containing it Download PDF

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JP6760684B2
JP6760684B2 JP2016063731A JP2016063731A JP6760684B2 JP 6760684 B2 JP6760684 B2 JP 6760684B2 JP 2016063731 A JP2016063731 A JP 2016063731A JP 2016063731 A JP2016063731 A JP 2016063731A JP 6760684 B2 JP6760684 B2 JP 6760684B2
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insulating portion
insulating
printed circuit
circuit board
inorganic
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JP2017069534A (en
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シン ドン−ジョー
シン ドン−ジョー
キム ドン−ホーン
キム ドン−ホーン
小椋　一郎
一郎 小椋
リー ジュン−ウォン
リー ジュン−ウォン
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Samsung Electro Mechanics Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/17—Amines; Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/346—Clay
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/17—Amines; Quaternary ammonium compounds
    • C08K5/18—Amines; Quaternary ammonium compounds with aromatically bound amino groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/303—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups H01B3/38 or H01B3/302
    • H01B3/306—Polyimides or polyesterimides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/40—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes epoxy resins
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2217—Oxides; Hydroxides of metals of magnesium
    • C08K2003/2224—Magnesium hydroxide
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2227—Oxides; Hydroxides of metals of aluminium
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0209—Inorganic, non-metallic particles

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Laminated Bodies (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Description

本発明は、絶縁材及びこれを含むプリント回路基板に関する。 The present invention relates to an insulating material and a printed circuit board including the insulating material.

デジタル電子製品の小型化、多機能化に伴って先端部品の機能もより一層アップグレードされている。特に、プリント回路基板の場合、高仕様に対応するための薄膜化、高集積化、微細回路のための開発が行われており、従来の単純絶縁層の構造及び材料は、低い熱膨脹係数または高い誘電率を有しにくいという短所があった。 With the miniaturization and multifunctionality of digital electronic products, the functions of advanced components have been further upgraded. In particular, in the case of printed circuit boards, thin films, high integrations, and fine circuits have been developed to meet high specifications, and conventional simple insulating layer structures and materials have a low coefficient of thermal expansion or a high coefficient of thermal expansion. There was a disadvantage that it was difficult to have a dielectric constant.

韓国公開特許第１０−２０１５−００２４１５４号公報Korean Publication No. 10-2015-0024154

第１絶縁部と、第３絶縁部と、上記第１絶縁部と上記第３絶縁部との間に介在された第２絶縁部と、を含み、上記第２絶縁部の無機物含有率は、上記第１絶縁部及び上記第３絶縁部の無機物含有率より大きい絶縁材、及びこれを含むプリント回路基板が提供される。 The content of the inorganic substance of the second insulating portion includes the first insulating portion, the third insulating portion, and the second insulating portion interposed between the first insulating portion and the third insulating portion. Provided are an insulating material having a content larger than the inorganic substance content of the first insulating portion and the third insulating portion, and a printed circuit board containing the insulating material.

本発明の一実施例に係る絶縁材を示す図である。It is a figure which shows the insulating material which concerns on one Example of this invention. 本発明の一実施例に係る絶縁材を製造する工程を示す図である。It is a figure which shows the process of manufacturing the insulating material which concerns on one Example of this invention. 本発明の他の実施例に係る絶縁材を示す図である。It is a figure which shows the insulating material which concerns on other Examples of this invention. 本発明の一実施例に係るプリント回路基板を示す図である。It is a figure which shows the printed circuit board which concerns on one Example of this invention. 本発明の他の実施例に係るプリント回路基板を示す図である。It is a figure which shows the printed circuit board which concerns on other embodiment of this invention.

本発明による絶縁材及びプリント回路基板の実施例を添付図面を参照して詳細に説明し、添付図面を参照して説明するに当たって、同一または対応する構成要素には同一の図面符号を付し、これに対する重複説明は省略する。 Examples of the insulating material and the printed circuit board according to the present invention will be described in detail with reference to the accompanying drawings, and the same or corresponding components will be designated by the same drawing reference numerals in the description with reference to the attached drawings. Duplicate explanation for this is omitted.

また、本明細書において、第１、第２などの用語は、同一または相応する構成要素を区別するための識別記号に過ぎず、同一または相応する構成要素が第１、第２などの用語により限定されない。 Further, in the present specification, the terms such as 1st and 2nd are merely identification codes for distinguishing the same or corresponding components, and the same or corresponding components are referred to by the terms such as 1st and 2nd. Not limited.

また、結合とは、各構成要素間の接触関係において、各構成要素の間に物理的に直接接触する場合のみを意味するものではなく、他の構成が各構成要素の間に介在され、その他の構成に構成要素がそれぞれ接触している場合まで包括する概念として使用する。 Further, the connection does not mean only the case where each component is in direct physical contact with each other in the contact relationship between the components, and other components are interposed between the components, and the like. It is used as a concept that covers the case where each component is in contact with the composition of.

＜絶縁材＞
図１は、本発明の一実施例に係る絶縁材１００を示す図である。 <Insulation material>
FIG. 1 is a diagram showing an insulating material 100 according to an embodiment of the present invention.

図１を参照すると、本発明の一実施例に係る絶縁材１００は、第１絶縁部１１０、第３絶縁部１３０、及びその間に介在された第２絶縁部１２０を含む。 Referring to FIG. 1, the insulating material 100 according to an embodiment of the present invention includes a first insulating portion 110, a third insulating portion 130, and a second insulating portion 120 interposed between them.

第２絶縁部１２０の無機物含有率は、第１絶縁部１１０の無機物含有率より大きくてもよい。第２絶縁部１２０の無機物含有率は、第３絶縁部１３０の無機物含有率より大きくてもよい。第２絶縁部１２０の無機物含有率は第１絶縁部１１０及び第３絶縁部１３０の全体の無機物含有率より大きくてもよい。 The inorganic substance content of the second insulating portion 120 may be larger than the inorganic substance content of the first insulating portion 110. The inorganic substance content of the second insulating portion 120 may be larger than the inorganic substance content of the third insulating portion 130. The inorganic content of the second insulating portion 120 may be larger than the total inorganic content of the first insulating portion 110 and the third insulating portion 130.

また第２絶縁部１２０は、絶縁材１００の熱膨脹係数を低減させるか、または絶縁材１００の誘電率を高めることができる。 Further, the second insulating portion 120 can reduce the coefficient of thermal expansion of the insulating material 100 or increase the dielectric constant of the insulating material 100.

第１絶縁部１１０及び第３絶縁部１３０は、樹脂を含む絶縁フィルムであってもよい。 The first insulating portion 110 and the third insulating portion 130 may be insulating films containing a resin.

第１絶縁部１１０及び第３絶縁部１３０の樹脂は、エポキシ樹脂等の熱硬化性樹脂、ポリイミド等の熱可塑性樹脂、または光硬化性樹脂であってもよい。 The resin of the first insulating portion 110 and the third insulating portion 130 may be a thermosetting resin such as an epoxy resin, a thermoplastic resin such as polyimide, or a photocurable resin.

エポキシ樹脂は、例えば、ナフタレン系エポキシ樹脂、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ノボラック系エポキシ樹脂、クレゾールノボラック系エポキシ樹脂、ゴム変性型エポキシ樹脂、環型脂肪族系エポキシ樹脂、シリコン系エポキシ樹脂、窒素系エポキシ樹脂、リン系エポキシ樹脂等であってもよいが、これに限定されない。 The epoxy resin is, for example, naphthalene-based epoxy resin, bisphenol A-type epoxy resin, bisphenol F-type epoxy resin, novolac-based epoxy resin, cresol novolac-based epoxy resin, rubber-modified epoxy resin, ring-type aliphatic epoxy resin, silicon-based. It may be, but is not limited to, an epoxy resin, a nitrogen-based epoxy resin, a phosphorus-based epoxy resin, or the like.

第１絶縁部１１０及び第３絶縁部１３０には、樹脂以外の添加物が含まれてもよい。添加物としては、硬化剤、硬化促進剤、界面活性剤、変色防止剤などがある。 Additives other than resin may be contained in the first insulating portion 110 and the third insulating portion 130. Additives include hardeners, hardeners, surfactants, discoloration inhibitors and the like.

第１絶縁部１１０及び第３絶縁部１３０の樹脂がエポキシ系樹脂である場合、硬化剤としては、エポキシ樹脂に含まれたエポキシド環（ｅｐｏｘｉｄｅ ｒｉｎｇ）と反応可能な反応基を含む。 When the resin of the first insulating portion 110 and the third insulating portion 130 is an epoxy-based resin, the curing agent contains a reactive group capable of reacting with an epoxyide ring contained in the epoxy resin.

硬化剤は、例えば、脂肪族／芳香族アミン系硬化剤、環型脂肪族アミンとその誘導体の硬化剤、酸無水物系硬化剤、ポリアミドアミン系硬化剤、ポリスルフィド硬化剤、フェノール系硬化剤、ビスフェノールＡ型硬化剤、ジシアンジアミド硬化剤等であり、これに限定されない。硬化剤は、単独で、または二つ以上を組み合わせて用いることができる。 Examples of the curing agent include an aliphatic / aromatic amine-based curing agent, a cyclic aliphatic amine and its derivative curing agent, an acid anhydride-based curing agent, a polyamide amine-based curing agent, a polysulfide curing agent, and a phenol-based curing agent. These include, but are not limited to, bisphenol A type curing agents and dicyandiamide curing agents. The curing agent can be used alone or in combination of two or more.

例えば、アミン系硬化剤としては、エチレンジアミン、プロピレンジアミン、ジエチレントリアミン、トリエチレンテトラミン、メタフェニレンジアミン、ジアミノジフェニルメタン、ジアミノジフェニルスルホン等がある。 For example, amine-based curing agents include ethylenediamine, propylenediamine, diethylenetriamine, triethylenetetramine, metaphenylenediamine, diaminodiphenylmethane, diaminodiphenylsulfone and the like.

また、酸無水物系硬化剤としては、無水フタル酸、無水マレイン酸、無水トリメリト酸、無水ピロメリト酸、無水ナド酸（ｎａｄｉｃ ａｃｉｄ）、無水グルタル酸、テトラヒドロフタル酸無水物、メチルテトラヒドロフタル酸無水物、ヘキサヒドロフタル酸無水物、メチルヘキサヒドロフタル酸無水物、メチルナド酸無水物、ドデセニルコハク酸無水物、ジクロロコハク酸無水物、ベンゾフェノンテトラカルボン酸無水物、クロレンド酸無水物、メチルナド酸無水物等がある。これらの酸無水物系硬化剤は、変色防止機能を有してもよい。 Examples of the acid anhydride-based curing agent include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromeritic anhydride, nadic acid anhydride, glutaric anhydride, tetrahydrophthalic anhydride, and methyltetrahydrophthalic anhydride. Hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylnadoic anhydride, dodecenylsuccinic anhydride, dichlorosuccinic anhydride, benzophenone tetracarboxylic acid anhydride, chlorendic acid anhydride, methylnad acid anhydride, etc. There is. These acid anhydride-based curing agents may have a discoloration prevention function.

硬化促進剤は、例えば、３次アミン系、イミダゾール系、尿素系等であってもよく、これに限定されない。硬化促進剤は、単独でまたは二つ以上を組み合わせて用いることができる。 The curing accelerator may be, for example, a tertiary amine type, an imidazole type, a urea type, or the like, and is not limited thereto. The curing accelerator can be used alone or in combination of two or more.

第１絶縁部１１０及び第３絶縁部１３０は、無機フィラーＦを含むことができる。第１絶縁部１１０及び第３絶縁部１３０に含まれたそれぞれの無機フィラーは、同じであってもよい。 The first insulating portion 110 and the third insulating portion 130 may contain the inorganic filler F. The respective inorganic fillers contained in the first insulating portion 110 and the third insulating portion 130 may be the same.

無機フィラーＦは、第１絶縁部１１０及び第３絶縁部１３０に剛性を付与し、熱膨脹係数を低減させる。第１絶縁部１１０及び第３絶縁部１３０に無機フィラーＦが含まれないか、または無機フィラーＦの含有率が小さ過ぎる場合は、熱膨脹係数が非常に高く、剛性が弱くて反りが発生する。 The inorganic filler F imparts rigidity to the first insulating portion 110 and the third insulating portion 130, and reduces the coefficient of thermal expansion. When the first insulating portion 110 and the third insulating portion 130 do not contain the inorganic filler F or the content of the inorganic filler F is too small, the coefficient of thermal expansion is very high, the rigidity is weak, and warpage occurs.

また、無機フィラーＦの含有率が高過ぎると、熱膨脹係数が低くなる一方、第１絶縁部１１０及び第３絶縁部１３０の表面から露出する無機フィラーの量が多くなるので、第１絶縁部１１０及び第３絶縁部１３０上に形成される回路１４０と絶縁部１１０、１３０との密着力が低減することになる。 Further, if the content of the inorganic filler F is too high, the coefficient of thermal expansion becomes low, while the amount of the inorganic filler exposed from the surfaces of the first insulating portion 110 and the third insulating portion 130 increases, so that the first insulating portion 110 The adhesion between the circuit 140 formed on the third insulating portion 130 and the insulating portions 110 and 130 is reduced.

本発明において第１絶縁部１１０内の無機フィラーＦは、第１絶縁部１１０と回路１４０との間の密着力を充分に確保できる程度の含有率を有する。一方、後述する第２絶縁部１２０により熱膨脹係数が調整される。 In the present invention, the inorganic filler F in the first insulating portion 110 has a content rate sufficient to secure a sufficient adhesion between the first insulating portion 110 and the circuit 140. On the other hand, the coefficient of thermal expansion is adjusted by the second insulating portion 120 described later.

無機フィラーＦは、シリカ（ＳｉＯ２）、アルミナ（Ａｌ２Ｏ３）、炭化ケイ素（ＳｉＣ）、硫酸バリウム（ＢａＳＯ４）、タルク、クレー、雲母パウダー、水酸化アルミニウム（ＡｌＯＨ３）、水酸化マグネシウム（Ｍｇ（ＯＨ）２）、炭酸カルシウム（ＣａＣＯ３）、炭酸マグネシウム（ＭｇＣＯ３）、酸化マグネシウム（ＭｇＯ）、窒化ホウ素（ＢＮ）、ホウ酸アルミニウム（ＡｌＢＯ３）、チタン酸バリウム（ＢａＴｉＯ３）及びジルコン酸カルシウム（ＣａＺｒＯ３）からなる群から選ばれた少なくとも１種以上を用いることができる。 Inorganic filler F includes silica (SiO 2 ), alumina (Al 2 O 3 ), silicon carbide (SiC), barium sulfate (BaSO 4 ), talc, clay, mica powder, aluminum hydroxide (AlOH 3 ), magnesium hydroxide. (Mg (OH) 2), calcium carbonate (CaCO 3), magnesium carbonate (MgCO 3), magnesium oxide (MgO), boron nitride (BN), aluminum borate (alBO 3), barium titanate (BaTiO 3) and At least one selected from the group consisting of calcium zirconate (CaZrO 3 ) can be used.

特に、熱膨脹係数に関連して無機フィラーＦは、シリカ（ＳｉＯ２）であってもよく、誘電率に関連して無機フィラーＦは、チタン酸バリウム（ＢａＴｉＯ３）であってもよい。 In particular, the inorganic filler F may be silica (SiO 2 ) in relation to the coefficient of thermal expansion, and the inorganic filler F may be barium titanate (BaTIO 3 ) in relation to the dielectric constant.

無機フィラーＦの平均粒子径は、例えば、０、０１から５μｍであってもよいが、これに限定されない。 The average particle size of the inorganic filler F may be, for example, 0,01 to 5 μm, but is not limited thereto.

第１絶縁部１１０、第３絶縁部１３０の一つの厚さは、１０から４０μｍであることができる。絶縁部の厚さが１０μｍ未満であると、絶縁材１００の役割を充分に果たせない場合があり、４０μｍを超過するとプリント回路基板１０の薄板化を実現することが困難となる場合がある。 The thickness of one of the first insulating portion 110 and the third insulating portion 130 can be 10 to 40 μm. If the thickness of the insulating portion is less than 10 μm, the role of the insulating material 100 may not be sufficiently fulfilled, and if it exceeds 40 μm, it may be difficult to realize the thinning of the printed circuit board 10.

図１に示すように、第１絶縁部１１０及び第３絶縁部１３０の厚さは、同一であってもよい。また、第１絶縁部１１０及び第３絶縁部１３０内に含有される無機フィラーＦの含有率及び／または含有量は、互いに同一であってもよい。 As shown in FIG. 1, the thicknesses of the first insulating portion 110 and the third insulating portion 130 may be the same. Further, the content rate and / or the content of the inorganic filler F contained in the first insulating portion 110 and the third insulating portion 130 may be the same as each other.

第２絶縁部１２０は、第１絶縁部１１０及び第３絶縁部１３０内に介在される。第２絶縁部１２０の厚さは、第１絶縁部１１０の厚さより小さい。また、第２絶縁部１２０の厚さは第３絶縁部１３０の厚さよりも小さい。第２絶縁部１２０の厚さは、１０μｍ以下であってもよい。 The second insulating portion 120 is interposed in the first insulating portion 110 and the third insulating portion 130. The thickness of the second insulating portion 120 is smaller than the thickness of the first insulating portion 110. Further, the thickness of the second insulating portion 120 is smaller than the thickness of the third insulating portion 130. The thickness of the second insulating portion 120 may be 10 μm or less.

第２絶縁部１２０は、無機物を主成分とし、バインダー等をさらに含むことができる。第２絶縁部１２０は、シート状に製作されてもよい。 The second insulating portion 120 contains an inorganic substance as a main component, and may further contain a binder and the like. The second insulating portion 120 may be manufactured in the form of a sheet.

第２絶縁部１２０の主成分となる無機物は、シリカ（ＳｉＯ２）、アルミナ（Ａｌ２Ｏ３）、炭化ケイ素（ＳｉＣ）、硫酸バリウム（ＢａＳＯ４）、タルク、クレー、雲母パウダー、水酸化アルミニウム（ＡｌＯＨ３）、水酸化マグネシウム（Ｍｇ（ＯＨ）２）、炭酸カルシウム（ＣａＣＯ３）、炭酸マグネシウム（ＭｇＣＯ３）、酸化マグネシウム（ＭｇＯ）、窒化ホウ素（ＢＮ）、ホウ酸アルミニウム（ＡｌＢＯ３）、チタン酸バリウム（ＢａＴｉＯ３）及びジルコン酸カルシウム（ＣａＺｒＯ３）からなる群から選ばれた少なくとも１種以上を用いることができる。 Inorganic substances that are the main components of the second insulating portion 120 are silica (SiO 2 ), alumina (Al 2 O 3 ), silicon carbonate (SiC), barium sulfate (BaSO 4 ), talc, clay, mica powder, and aluminum hydroxide. (AlOH 3), magnesium hydroxide (Mg (OH) 2), calcium carbonate (CaCO 3), magnesium carbonate (MgCO 3), magnesium oxide (MgO), boron nitride (BN), aluminum borate (alBO 3), At least one selected from the group consisting of barium titanate (BaTIO 3 ) and calcium zirconate (CaZrO 3 ) can be used.

一方、第２絶縁部１２０の主成分となる無機物は、第１絶縁部１１０及び第３絶縁部１３０に含有された無機フィラーＦと同じ材料であってもよい。 On the other hand, the inorganic substance that is the main component of the second insulating portion 120 may be the same material as the inorganic filler F contained in the first insulating portion 110 and the third insulating portion 130.

すなわち、第１絶縁部１１０及び第３絶縁部１３０がエポキシ樹脂とシリカとを含む場合、第２絶縁部１２０は、シリカとバインダー（ｂｉｎｄｅｒ）とを含むことができる。また、第１絶縁部１１０及び第３絶縁部１３０がエポキシ樹脂とチタン酸バリウムとを含む場合、第２絶縁部１２０はチタン酸バリウムとバインダーとを含むことができる。 That is, when the first insulating portion 110 and the third insulating portion 130 contain the epoxy resin and silica, the second insulating portion 120 can include silica and a binder. Further, when the first insulating portion 110 and the third insulating portion 130 contain an epoxy resin and barium titanate, the second insulating portion 120 can contain barium titanate and a binder.

第２絶縁部１２０の無機物含有率は、第１絶縁部１１０の無機物含有率より大きい。また、第２絶縁部１２０の無機物含有率は、第３絶縁部１３０の無機物含有率より大きい。この第２絶縁部１２０は、絶縁材１００の熱膨脹係数を低減させる。特に、上記無機物がシリカである場合、熱膨脹係数の低減効果は大きい。 The inorganic content of the second insulating portion 120 is larger than the inorganic content of the first insulating portion 110. Further, the inorganic substance content of the second insulating portion 120 is larger than the inorganic substance content of the third insulating portion 130. The second insulating portion 120 reduces the coefficient of thermal expansion of the insulating material 100. In particular, when the inorganic substance is silica, the effect of reducing the coefficient of thermal expansion is large.

ここで、「含有率」とは、当該絶縁部に対して無機物が占める割合を意味する。 Here, the "content rate" means the ratio of the inorganic substance to the insulating portion.

第２絶縁部１２０の無機物含有率が第１絶縁部１１０、第３絶縁部１３０の無機物含有率よりも大きいため、絶縁材１００の任意の断面で無機物が占める体積を比べると、第２絶縁部１２０の方が、第１絶縁部１１０の方よりも大きく、第３絶縁部１３０の方よりも大きい。 Since the content of the inorganic substance in the second insulating portion 120 is larger than the content of the inorganic substance in the first insulating portion 110 and the third insulating portion 130, the volume occupied by the inorganic substance in an arbitrary cross section of the insulating material 100 is compared. 120 is larger than the first insulating portion 110 and larger than the third insulating portion 130.

また、無機物が無機フィラーで形成された場合は、絶縁材１００の任意の断面上で、第２絶縁部１２０の無機フィラーの数が、第１絶縁部１１０または第３絶縁部１３０での無機フィラーの数よりも多い。 When the inorganic substance is formed of the inorganic filler, the number of the inorganic fillers in the second insulating portion 120 is the number of the inorganic fillers in the first insulating portion 110 or the third insulating portion 130 on an arbitrary cross section of the insulating material 100. More than the number of.

第２絶縁部１２０の無機物含有率は、第１絶縁部１１０及び第３絶縁部１３０の全体の無機物含有率より大きくてもよい。 The inorganic content of the second insulating portion 120 may be larger than the total inorganic content of the first insulating portion 110 and the third insulating portion 130.

また、第２絶縁部１２０の無機物含有量は、第１絶縁部１１０及び／または第３絶縁部１３０の全体の無機物含有量より大きくてもよい。 Further, the inorganic content of the second insulating portion 120 may be larger than the total inorganic content of the first insulating portion 110 and / or the third insulating portion 130.

一般的に、樹脂の熱膨脹係数は金属の熱膨脹係数より著しく高い。樹脂と金属との間の熱膨脹係数差は、微細回路の実現を阻害する。これは、プリント回路基板の製造過程中に熱を用いる工程が含まれ得るが、この場合、樹脂絶縁材と金属回路との間の熱膨脹係数差により、回路が絶縁材から離脱する問題が発生するからである。 In general, the coefficient of thermal expansion of a resin is significantly higher than the coefficient of thermal expansion of a metal. The difference in the coefficient of thermal expansion between the resin and the metal hinders the realization of fine circuits. This may include the process of using heat during the manufacturing process of the printed circuit board, but in this case, the difference in the coefficient of thermal expansion between the resin insulating material and the metal circuit causes a problem that the circuit is separated from the insulating material. Because.

絶縁材が、第２絶縁部なしで第１絶縁部及び第３絶縁部１３０のみ存在し、絶縁部１１０、１３０が樹脂と無機フィラーＦとで構成される場合、無機フィラーＦの量が十分ではないため、絶縁材１００の熱膨脹係数が高くて、絶縁材１００と回路１４０との間の熱膨脹係数差を克服することができない。 When the insulating material has only the first insulating portion and the third insulating portion 130 without the second insulating portion and the insulating portions 110 and 130 are composed of the resin and the inorganic filler F, the amount of the inorganic filler F is not sufficient. Therefore, the coefficient of thermal expansion of the insulating material 100 is high, and the difference in the coefficient of thermal expansion between the insulating material 100 and the circuit 140 cannot be overcome.

第２絶縁部１２０が、第１絶縁部１１０と第３絶縁部１３０との間に介在されることにより、第２絶縁部１２０は、絶縁材１００の熱膨脹係数を著しく低減させる。この特徴は、窮極的に微細回路の製造を可能とさせる。 By interposing the second insulating portion 120 between the first insulating portion 110 and the third insulating portion 130, the second insulating portion 120 significantly reduces the coefficient of thermal expansion of the insulating material 100. This feature makes it possible to manufacture fine circuits extremely.

また、第２絶縁部１２０は、誘電率を高めることができる。第１絶縁部１１０及び第３絶縁部１３０には、無機フィラーが十分に含まれていないため、絶縁材１００の誘電率が高くないが、第２絶縁部１２０が第１絶縁部１１０と第３絶縁部１３０との間に介在されることにより、絶縁材１００の誘電率を高める。特に、第１絶縁部１１０、第３絶縁部１３０、及び第２絶縁部１２０に含まれる無機物は、チタン酸バリウムであることができる。 In addition, the second insulating portion 120 can increase the dielectric constant. Since the first insulating portion 110 and the third insulating portion 130 do not sufficiently contain the inorganic filler, the dielectric constant of the insulating material 100 is not high, but the second insulating portion 120 is the first insulating portion 110 and the third insulating portion 110. By interposing it between the insulating portion 130 and the insulating portion 130, the dielectric constant of the insulating material 100 is increased. In particular, the inorganic substance contained in the first insulating portion 110, the third insulating portion 130, and the second insulating portion 120 can be barium titanate.

高い誘電率を有する絶縁材１００は、キャパシター、指紋センサー等様々に活用されることができる。 The insulating material 100 having a high dielectric constant can be used in various ways such as a capacitor and a fingerprint sensor.

第２絶縁部１２０に含まれるバインダーとしては、ポリビニルアルコール、ポリビニルブチラール、ポリビニルアセテート、ポリビニルアセタール、ポリビニルホルマール、及びフェノキシ等があるが、これに限定されない。 Examples of the binder contained in the second insulating portion 120 include, but are not limited to, polyvinyl alcohol, polyvinyl butyral, polyvinyl acetate, polyvinyl acetal, polyvinyl formal, and phenoxy.

図２には、上述した絶縁材１００の製造工程が示されている。絶縁材１００は、ロールツーロール（ｒｏｌｌ ｔｏ ｒｏｌｌ）方式により形成することができる。 FIG. 2 shows the manufacturing process of the above-mentioned insulating material 100. The insulating material 100 can be formed by a roll-to-roll method.

第１絶縁部２１０は、第１キャリアＣ１に積層され、積層されたものは第１ロールＲ１に巻かれている。また第２絶縁部２２０は、第２キャリアＣ２に積層され、積層されたものは第２ロールＲ２に巻かれている。 The first insulating portion 210 is laminated on the first carrier C1, and the laminated one is wound on the first roll R1. Further, the second insulating portion 220 is laminated on the second carrier C2, and the laminated one is wound on the second roll R2.

第１ロールＲ１及び第２ロールＲ２は回転しながら、巻かれていたものが巻き出される。第１絶縁部２１０の一面に第２絶縁部２２０の一面が接触するように第１キャリアＣ１と第２キャリアＣ２とが積層され、同時に加圧される。第１キャリアＣ１と第２キャリアＣ２とは二つのロールの間に流入されながら積層され、加圧される。加圧の際には、熱が加えられてもよい。 While the first roll R1 and the second roll R2 are rotating, what has been wound is unwound. The first carrier C1 and the second carrier C2 are laminated so that one surface of the second insulating portion 220 is in contact with one surface of the first insulating portion 210, and are simultaneously pressurized. The first carrier C1 and the second carrier C2 are laminated and pressurized while flowing between the two rolls. During pressurization, heat may be applied.

その後、第１キャリアＣ１及び第２キャリアＣ２の積層体から、第２キャリアＣ２がロールにより除去される。これにより、第２絶縁部２２０が露出する。 After that, the second carrier C2 is removed by a roll from the laminated body of the first carrier C1 and the second carrier C2. As a result, the second insulating portion 220 is exposed.

第３絶縁部２３０は、第３キャリアＣ３に積層され、積層されたものは第３ロールＲ３に巻かれている。露出された第２絶縁部２２０上に第３絶縁部２３０が積層されるように第１キャリアＣ１と第３キャリアＣ３とが積層され、同時に加圧される。第１キャリアＣ１と第３キャリアＣ３とは二つのロールの間に流入されながら積層され、加圧される。加圧の際には、熱が加えられてもよい。 The third insulating portion 230 is laminated on the third carrier C3, and the laminated one is wound on the third roll R3. The first carrier C1 and the third carrier C3 are laminated so that the third insulating portion 230 is laminated on the exposed second insulating portion 220, and are simultaneously pressurized. The first carrier C1 and the third carrier C3 are laminated and pressurized while flowing between the two rolls. During pressurization, heat may be applied.

その後、第１キャリアＣ１と第３キャリアＣ３、及びその間に積層されたものは硬化され、第１キャリアＣ１と第３キャリアＣ３とが除去されると、第１絶縁部２１０及び第３絶縁部２３０、並びにその間に介在された第２絶縁部２２０が完成される。場合によって、第１キャリアＣ１と第３キャリアＣ３とが除去された後に、残りの積層体が硬化されることも可能である。硬化温度は、１９０℃程度であってもよい。 After that, the first carrier C1 and the third carrier C3, and those laminated between them are cured, and when the first carrier C1 and the third carrier C3 are removed, the first insulating portion 210 and the third insulating portion 230 are formed. , And the second insulating portion 220 interposed between them is completed. In some cases, it is possible that the remaining laminate is cured after the first carrier C1 and the third carrier C3 have been removed. The curing temperature may be about 190 ° C.

一方、上述した第１キャリアＣ１、第２キャリアＣ２、及び第３キャリアＣ３は、ＰＥＴ、ＰＥ、ＰＶＣ等の材質であることができる。 On the other hand, the above-mentioned first carrier C1, second carrier C2, and third carrier C3 can be made of materials such as PET, PE, and PVC.

図３は、本発明の他の実施例に係る絶縁材１００を示す図である。 FIG. 3 is a diagram showing an insulating material 100 according to another embodiment of the present invention.

図３を参照すると、本発明の他の実施例に係る絶縁材１００は、第１絶縁部１１０及び第３絶縁部１３０、並びにその間に介在された第２絶縁部１２０を含む。 Referring to FIG. 3, the insulating material 100 according to another embodiment of the present invention includes a first insulating portion 110 and a third insulating portion 130, and a second insulating portion 120 interposed between them.

但し、第１絶縁部１１０と第３絶縁部１３０との厚さは互いに異ならせて形成される。また、第１絶縁部１１０及び第３絶縁部１３０内に含まれているそれぞれの無機フィラーＦの含有率も異ならせることができる。 However, the thicknesses of the first insulating portion 110 and the third insulating portion 130 are formed to be different from each other. Further, the contents of the respective inorganic fillers F contained in the first insulating portion 110 and the third insulating portion 130 can also be made different.

第１絶縁部１１０と第３絶縁部１３０との厚さまたは無機フィラーＦの含有率を互いに異ならせることにより、絶縁材１００の反りを補完することができる。 By making the thickness of the first insulating portion 110 and the third insulating portion 130 or the content of the inorganic filler F different from each other, the warp of the insulating material 100 can be complemented.

例えば、第１絶縁部１１０と第３絶縁部１３０との厚さ及び無機フィラーＦの含有率が同一である場合、絶縁材１００が下方へ凸状に反る場合（スマイル状、∪状）は、上側に位置した第１絶縁部１１０の厚さを大きくして絶縁材１００が上方へ反るようにして補完する。 For example, when the thickness of the first insulating portion 110 and the third insulating portion 130 and the content of the inorganic filler F are the same, or when the insulating material 100 warps downward in a convex shape (smile shape, ∪ shape), , The thickness of the first insulating portion 110 located on the upper side is increased so that the insulating material 100 warps upward to complement it.

また、一対の第１絶縁部１１０の厚さ及び無機フィラーＦの含有率が同一である場合、絶縁材１００が上方へ凸状に反る場合（クライング状、∩状）、下側に位置した第３絶縁部１３０の厚さを大きくして絶縁材１００が下方へ反るように補完する。 Further, when the thickness of the pair of first insulating portions 110 and the content of the inorganic filler F are the same, and when the insulating material 100 warps upward in a convex shape (crying shape, ∩ shape), it is located on the lower side. The thickness of the third insulating portion 130 is increased to complement the insulating material 100 so as to warp downward.

一方、本実施例に他の絶縁材１００も上述したロールツーロール方式で形成することができ、上述したロールツーロール方式において、第１絶縁部２１０と第３絶縁部２３０との厚さを互いに異ならせて形成すると、本実施例に係る絶縁材１００が完成される。 On the other hand, another insulating material 100 can also be formed in the present embodiment by the roll-to-roll method described above, and in the roll-to-roll method described above, the thicknesses of the first insulating portion 210 and the third insulating portion 230 are set to each other. When formed differently, the insulating material 100 according to this embodiment is completed.

＜プリント回路基板＞
図４は、本発明の一実施例に係るプリント回路基板１０を示す図である。 <Printed circuit board>
FIG. 4 is a diagram showing a printed circuit board 10 according to an embodiment of the present invention.

図４を参照すると、本発明の一実施例に係るプリント回路基板１０は、回路１４０と絶縁材１００とを含み、絶縁材１００は、第１絶縁部１１０、第３絶縁部１３０、及び第１絶縁部１１０と第３絶縁部１３０との間に介在された第２絶縁部１２０を含む。 Referring to FIG. 4, the printed circuit board 10 according to an embodiment of the present invention includes a circuit 140 and an insulating material 100, and the insulating material 100 includes a first insulating portion 110, a third insulating portion 130, and a first insulating material 100. A second insulating portion 120 interposed between the insulating portion 110 and the third insulating portion 130 is included.

第２絶縁部１２０の無機物含有率は、第１絶縁部１１０の無機物含有率より大きくてもよい。第２絶縁部１２０の無機物含有率は、第３絶縁部１３０の無機物含有率より大きくてもよい。 The inorganic substance content of the second insulating portion 120 may be larger than the inorganic substance content of the first insulating portion 110. The inorganic substance content of the second insulating portion 120 may be larger than the inorganic substance content of the third insulating portion 130.

また、第２絶縁部１２０は、絶縁材１００の熱膨脹係数を低減させるか、絶縁材１００の誘電率を高めることができる。 Further, the second insulating portion 120 can reduce the coefficient of thermal expansion of the insulating material 100 or increase the dielectric constant of the insulating material 100.

絶縁材１００に関する説明は、上述した説明と同様であり、ここでは省略する。 The description of the insulating material 100 is the same as the above description, and is omitted here.

回路１４０は、絶縁材１００上に形成される。すなわち、絶縁材１００の上面、下面、または上・下面に形成される。回路１４０は、絶縁材１００の第１絶縁部１１０と接触する。第１絶縁部１１０及び第３絶縁部１３０における無機フィラーＦの含有率は、大きくなく、含有量も多くないので、回路１４０と絶縁部１１０、１３０との密着力を充分に確保することができる。 The circuit 140 is formed on the insulating material 100. That is, it is formed on the upper surface, the lower surface, or the upper / lower surface of the insulating material 100. The circuit 140 comes into contact with the first insulating portion 110 of the insulating material 100. Since the content of the inorganic filler F in the first insulating portion 110 and the third insulating portion 130 is not large and the content is not large, it is possible to sufficiently secure the adhesion between the circuit 140 and the insulating portions 110 and 130. ..

回路１４０は、アディティブ（ａｄｄｉｔｉｖｅ）法、サブトラクティブ（ｓｕｂｔｒａｃｔｉｖｅ）法、セミアディティブ（Ｓｅｍｉ ａｄｄｉｔｉｖｅ）法等の工法により形成可能である。例えば、回路１４０が形成される前に、絶縁材１００上には先ず金属層が積層され、金属層がパターニングされることにより回路１４０を形成することができる。 The circuit 140 can be formed by a construction method such as an additive method, a subtractive method, or a semi-additive method. For example, before the circuit 140 is formed, a metal layer is first laminated on the insulating material 100, and the metal layer is patterned to form the circuit 140.

回路１４０は、銅（Ｃｕ）以外に電気的特性に優れた銀（Ａｇ）、パラジウム（Ｐｄ）、アルミニウム（Ａｌ）、ニッケル（Ｎｉ）、チタン（Ｔｉ）、金（Ａｕ）、白金（Ｐｔ）等で形成することができる。 In addition to copper (Cu), the circuit 140 has silver (Ag), palladium (Pd), aluminum (Al), nickel (Ni), titanium (Ti), gold (Au), and platinum (Pt), which have excellent electrical characteristics. Etc. can be formed.

絶縁材１００は、複数形成可能であり、それぞれの絶縁材１００上に回路１４０を形成することができる。複数の絶縁材１００は、すべて第１絶縁部１１０と第２絶縁部１２０とで形成されることができる。 A plurality of insulating materials 100 can be formed, and a circuit 140 can be formed on each of the insulating materials 100. The plurality of insulating materials 100 can all be formed by the first insulating portion 110 and the second insulating portion 120.

一方、絶縁材１００内にはビア１５０が形成されてもよい。ビア１５０は、絶縁材１００の上・下面に形成された回路１４０を電気的に接続させる。ビア１５０は、絶縁材１００に形成されたビアホールが導電性物質で充填されることにより形成可能である。 On the other hand, the via 150 may be formed in the insulating material 100. The via 150 electrically connects the circuits 140 formed on the upper and lower surfaces of the insulating material 100. The via 150 can be formed by filling the via hole formed in the insulating material 100 with a conductive substance.

ビアホールは、絶縁材１００を貫通するホールであって、ＣＮＣドリル、ＣＯ２レーザー、Ｙａｇレーザー等を用いて形成可能である。ビアホールの形成において第１絶縁部１１０と第２絶縁部１２０とは同様の工程により一度に貫通されることが可能であり、一つの方法により先ず第１絶縁部１１０が貫通され、その後、他の方法により第２絶縁部１２０が貫通されることも可能である。 The via hole is a hole that penetrates the insulating material 100 and can be formed by using a CNC drill, a CO2 laser, a Yag laser, or the like. In the formation of the via hole, the first insulating portion 110 and the second insulating portion 120 can be penetrated at once by the same process, and the first insulating portion 110 is first penetrated by one method, and then the other insulating portion 110 is formed. It is also possible that the second insulating portion 120 is penetrated by the method.

ビアホールに充填する方法としては、メッキ方法があり、導電性ペーストをビアホールに充填する方法もあるが、これらの方法に限定されない。 As a method of filling the via hole, there is a plating method, and there is also a method of filling the via hole with a conductive paste, but the method is not limited to these methods.

本発明の一実施例に係るプリント回路基板１０は、絶縁材１００の熱膨脹係数と金属の熱膨脹係数との差が従来よりも低減され、微細回路１４０の製造に有利であり、絶縁材１００と回路１４０との密着力も確保できる。また、第２絶縁部１２０の無機物の種類によって絶縁材１００の誘電特性を強化させることもできる。 In the printed circuit board 10 according to the embodiment of the present invention, the difference between the coefficient of thermal expansion of the insulating material 100 and the coefficient of thermal expansion of the metal is reduced as compared with the conventional case, which is advantageous for manufacturing the fine circuit 140, and the insulating material 100 and the circuit. Adhesion with 140 can also be secured. Further, the dielectric property of the insulating material 100 can be enhanced depending on the type of the inorganic substance of the second insulating portion 120.

図５は本発明の他の実施例に係るプリント回路基板１０を示す図である。 FIG. 5 is a diagram showing a printed circuit board 10 according to another embodiment of the present invention.

図５を参照すると、本発明の他の実施例に係るプリント回路基板１０は、回路１４０と絶縁材１００とを含み、絶縁材１００は、第１絶縁部１１０、第３絶縁部１３０、及び第１絶縁部１１０と第３絶縁部１３０との間に介在された第２絶縁部１２０を含む。 Referring to FIG. 5, the printed circuit board 10 according to another embodiment of the present invention includes a circuit 140 and an insulating material 100, and the insulating material 100 includes a first insulating portion 110, a third insulating portion 130, and a first insulating material 100. 1 Includes a second insulating portion 120 interposed between the insulating portion 110 and the third insulating portion 130.

但し、第１絶縁部１１０及び第３絶縁部１３０の厚さは、互いに異ならせて形成される。また、第１絶縁部１１０及び第３絶縁部１３０に含まれる無機フィラーＦの含有率も異ならせることができる。 However, the thicknesses of the first insulating portion 110 and the third insulating portion 130 are formed to be different from each other. Further, the content of the inorganic filler F contained in the first insulating portion 110 and the third insulating portion 130 can also be made different.

第１絶縁部１１０と第３絶縁部１３０との厚さ、または無機フィラーＦの含有率を互いに異ならせることにより、絶縁材１００の反りを補完することができる。 By making the thickness of the first insulating portion 110 and the third insulating portion 130 or the content of the inorganic filler F different from each other, the warp of the insulating material 100 can be complemented.

これに関する説明は上述した説明と同様であり、ここでは省略する。 The description of this is the same as the above description, and will be omitted here.

以上、本発明の一実施例について説明したが、当該技術分野で通常の知識を有する者であれば特許請求範囲に記載した本発明の思想から逸脱しない範囲内で、構成要素の付加、変更、削除または追加などにより本発明を多様に修正及び変更することができ、これも本発明の権利範囲内に含まれるといえよう。 Although one embodiment of the present invention has been described above, if the person has ordinary knowledge in the technical field, addition, modification, and addition of constituent elements can be made without departing from the idea of the present invention described in the claims. The present invention can be modified and changed in various ways by deletion or addition, and it can be said that this is also included in the scope of rights of the present invention.

１０ プリント回路基板
１００ 絶縁材
１１０、２１０ 第１絶縁部
１２０、２２０ 第２絶縁部
１３０、２３０ 第３絶縁部
１４０ 回路
１５０ ビア
Ｆ 無機フィラー
Ｃ１ 第１キャリア
Ｃ２ 第２キャリア
Ｃ３ 第３キャリア
Ｒ１ 第１ロール
Ｒ２ 第２ロール
Ｒ３ 第３ロール 10 Printed circuit board 100 Insulation material 110, 210 First insulation part 120, 220 Second insulation part 130, 230 Third insulation part 140 Circuit 150 Via F Inorganic filler C1 First carrier C2 Second carrier C3 Third carrier R1 First Roll R2 2nd roll R3 3rd roll

Claims (16)

回路と絶縁材とを含み、
前記絶縁材は、
第１絶縁部と、
第３絶縁部と、
前記第１絶縁部と前記第３絶縁部との間に介在された第２絶縁部と、を含み、
前記第２絶縁部の無機物含有率は、前記第１絶縁部及び前記第３絶縁部の無機物含有率より大きく、
前記第２絶縁部の厚さは、前記第１絶縁部の厚さより小さい、プリント回路基板。 Including circuit and insulation,
The insulating material is
With the first insulation part
With the third insulation part
Includes a second insulating portion interposed between the first insulating portion and the third insulating portion.
The inorganic content of the second insulating portion is much larger than the inorganic content of the first insulating portion and the third insulating portion,
The thickness of the second insulating portion is not smaller than a thickness of the first insulating portion, the printed circuit board. 前記第１絶縁部は、樹脂（ｒｅｓｉｎ）及び無機フィラーを含む請求項１に記載のプリント回路基板。 The printed circuit board according to claim 1, wherein the first insulating portion includes a resin and an inorganic filler. 前記第２絶縁部は、無機物及びバインダーを含み、
前記無機フィラーの材料は、前記無機物の材料と同じである請求項２に記載のプリント回路基板。 The second insulating portion contains an inorganic substance and a binder, and contains an inorganic substance and a binder.
The material of the inorganic filler, a printed circuit board according to claim 2 is the same as the material of the front cinchona machine thereof. 前記第１絶縁部及び前記第３絶縁部にそれぞれ含まれた前記無機フィラーの量は、互いに異なる請求項２または３に記載のプリント回路基板。 The printed circuit board according to claim 2 or 3, wherein the amounts of the inorganic fillers contained in the first insulating portion and the third insulating portion are different from each other. 前記第２絶縁部の無機物は、前記絶縁材の熱膨脹係数を低減させる請求項１から４のいずれか一項に記載のプリント回路基板。 The printed circuit board according to any one of claims 1 to 4, wherein the inorganic substance of the second insulating portion reduces the coefficient of thermal expansion of the insulating material. 前記第２絶縁部の無機物は、前記絶縁材の誘電率を高める請求項１から４のいずれか一項に記載のプリント回路基板。 The printed circuit board according to any one of claims 1 to 4, wherein the inorganic substance of the second insulating portion is used to increase the dielectric constant of the insulating material. 前記第２絶縁部の無機物は、ＳｉＯ２またはＢａＴｉＯ３のうちの少なくともいずれか１種を含む請求項１から４のいずれか一項に記載のプリント回路基板。 The printed circuit board according to any one of claims 1 to 4, wherein the inorganic substance of the second insulating portion contains at least one of SiO 2 or BaTiO 3 . 前記第１絶縁部及び前記第３絶縁部の厚さは、互いに異なる請求項１から７のいずれか一項に記載のプリント回路基板。 The printed circuit board according to any one of claims 1 to 7, wherein the thickness of the first insulating portion and the thickness of the third insulating portion are different from each other. 前記回路は、前記絶縁材の上面及び下面に形成される請求項１から８のいずれか一項に記載のプリント回路基板。 The printed circuit board according to any one of claims 1 to 8 , wherein the circuit is formed on the upper surface and the lower surface of the insulating material. 前記絶縁材の上面及び下面に形成される前記回路を電気的に接続させるために、前記絶縁材を貫通するビアをさらに含む請求項９に記載のプリント回路基板。 The printed circuit board according to claim 9 , further comprising vias penetrating the insulating material in order to electrically connect the circuits formed on the upper surface and the lower surface of the insulating material. 前記絶縁材を複数積層して形成される請求項９又は１０に記載のプリント回路基板。 The printed circuit board according to claim 9 or 10, which is formed by laminating a plurality of the insulating materials. 第１絶縁部と、
第３絶縁部と、
前記第１絶縁部と前記第３絶縁部との間に介在された第２絶縁部と、を含み、
前記第２絶縁部の無機物含有率は、前記第１絶縁部及び前記第３絶縁部の無機物含有率より大きく、
前記第２絶縁部の厚さは、前記第１絶縁部の厚さより小さい、絶縁材。 With the first insulation part
With the third insulation part
Includes a second insulating portion interposed between the first insulating portion and the third insulating portion.
The inorganic content of the second insulating portion is much larger than the inorganic content of the first insulating portion and the third insulating portion,
The thickness of the second insulating portion is not smaller than a thickness of the first insulating portion, the insulating material. 前記第１絶縁部は、樹脂（ｒｅｓｉｎ）及び無機フィラーを含み、
前記第２絶縁部は、無機物及びバインダーを含み、
前記無機フィラーの材料は、前記無機物の材料と同じである請求項１２に記載の絶縁材。 The first insulating portion contains a resin and an inorganic filler, and contains a resin.
The second insulating portion contains an inorganic substance and a binder, and contains an inorganic substance and a binder.
Insulating material according to the material of the inorganic filler according to claim 12 is the same as the material before cinchona machine thereof. 前記第１絶縁部及び前記第３絶縁部にそれぞれ含まれた前記無機フィラーの量は、互いに異なる請求項１３に記載の絶縁材。 The insulating material according to claim 13, wherein the amounts of the inorganic fillers contained in the first insulating portion and the third insulating portion are different from each other. 前記第２絶縁部の無機物は、ＳｉＯ２またはＢａＴｉＯ３のうちの少なくともいずれか１種を含む請求項１２から１４のいずれか一項に記載の絶縁材。 The insulating material according to any one of claims 12 to 14, wherein the inorganic substance of the second insulating portion contains at least one of SiO 2 or BaTiO 3 . 前記第１絶縁部及び前記第３絶縁部の厚さは、互いに異なる請求項１２から１５のいずれか一項に記載の絶縁材。 The insulating material according to any one of claims 12 to 15 , wherein the thicknesses of the first insulating portion and the third insulating portion are different from each other.
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