JP6759174B2 - 処理液及びパターン形成方法 - Google Patents

処理液及びパターン形成方法 Download PDF

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Publication number
JP6759174B2
JP6759174B2 JP2017206450A JP2017206450A JP6759174B2 JP 6759174 B2 JP6759174 B2 JP 6759174B2 JP 2017206450 A JP2017206450 A JP 2017206450A JP 2017206450 A JP2017206450 A JP 2017206450A JP 6759174 B2 JP6759174 B2 JP 6759174B2
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group
treatment liquid
solvent
acetate
forming method
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Japanese (ja)
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JP2018081307A5 (OSRAM
JP2018081307A (ja
Inventor
上村　哲也
上村　　哲也
三千紘 白川
三千紘 白川
大松　禎
禎 大松
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Fujifilm Corp
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Fujifilm Corp
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Priority to TW106137910A priority Critical patent/TWI749094B/zh
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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2017206450A 2016-11-07 2017-10-25 処理液及びパターン形成方法 Active JP6759174B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW106137910A TWI749094B (zh) 2016-11-07 2017-11-02 處理液及圖案形成方法

Applications Claiming Priority (2)

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JP2016217600 2016-11-07
JP2016217600 2016-11-07

Publications (3)

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JP2018081307A JP2018081307A (ja) 2018-05-24
JP2018081307A5 JP2018081307A5 (OSRAM) 2019-04-11
JP6759174B2 true JP6759174B2 (ja) 2020-09-23

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JP2017206450A Active JP6759174B2 (ja) 2016-11-07 2017-10-25 処理液及びパターン形成方法

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JP (1) JP6759174B2 (OSRAM)
TW (1) TWI749094B (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020040034A1 (ja) * 2018-08-20 2020-02-27 富士フイルム株式会社 薬液収容体
US20220033343A1 (en) * 2018-09-28 2022-02-03 Tokuyama Corporation Method for producing organic solvent solution of quaternary ammonium hydroxide
KR102650361B1 (ko) * 2018-10-03 2024-03-22 후지필름 가부시키가이샤 약액 및 약액 수용체
JP7221027B2 (ja) * 2018-11-12 2023-02-13 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
US11994803B2 (en) * 2019-07-11 2024-05-28 Merck Patent Gmbh Photoresist remover compositions
WO2021039760A1 (ja) * 2019-08-29 2021-03-04 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法
JP2021081545A (ja) * 2019-11-18 2021-05-27 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ レジストパターン間置換液、およびそれを用いたレジストパターンの製造方法
CN117693716A (zh) * 2021-07-14 2024-03-12 富士胶片株式会社 图案形成方法、电子器件的制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8900802B2 (en) * 2013-02-23 2014-12-02 International Business Machines Corporation Positive tone organic solvent developed chemically amplified resist
KR102025581B1 (ko) * 2014-12-26 2019-09-26 후지필름 가부시키가이샤 유기계 처리액 및 패턴 형성 방법
JP2018072358A (ja) * 2015-03-02 2018-05-10 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物及び感活性光線性又は感放射線性膜

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Publication number Publication date
TWI749094B (zh) 2021-12-11
TW201821605A (zh) 2018-06-16
JP2018081307A (ja) 2018-05-24

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