JP6745361B2 - 発光デバイスのp型層を形成する方法 - Google Patents
発光デバイスのp型層を形成する方法 Download PDFInfo
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 238000009499 grossing Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Led Devices (AREA)
Description
Claims (11)
- 少なくとも1つのIII族窒化物発光層と、少なくとも1つのp型層と、少なくとも1つのn型層とを含む半導体構造を、成長基板上に選択的に成長させる方法であって、
前記半導体構造内の層のうちの1つ又は前記成長基板の表面上にマスク材料の複数のセクションを形成し、
前記表面及び前記マスク材料の前記複数のセクションを覆って、前記半導体構造を成長させ、前記少なくとも1つのp型層の少なくとも一部が前記マスク材料と接触し、
前記半導体構造を前記成長させることの後に、前記マスク材料の前記複数のセクションを除去して、前記p型層の一部を露出させるトレンチを前記半導体構造内に形成し、
前記トレンチを形成した後に、前記半導体構造をアニールする、
ことを有する方法。 - 前記トレンチは複数のトレンチである、請求項1に記載の方法。
- 前記半導体構造を前記アニールする際の水素の最大拡散長が、最近傍のトレンチ同士の間隔の1/2よりも大きい、請求項2に記載の方法。
- 前記半導体構造はトンネル接合を有する、請求項1に記載の方法。
- p型領域とn型領域との間に配置されたIII族窒化物発光層を含むデバイスを形成する方法であって、
p型層を成長させることと、
前記p型層の少なくとも一部と接触するマスク層を形成し、
前記マスク層及び前記p型層の上にn型層を成長させ、
前記マスク層を除去することによって、前記p型層の前記少なくとも一部を周囲環境に露出させる少なくとも1つの埋め込まれたトレンチを形成し、
前記デバイスをアニールし、該アニールにおいて、前記トレンチが前記p型層からの水素の除去を可能にする、
ことを有する方法。 - 前記少なくとも1つの埋め込まれたトレンチは、前記デバイスの側面まで延在するように形成される、請求項5に記載の方法。
- 前記マスク層は複数のマスク領域であり、各マスク領域が前記p型層の一部と接触する、請求項5に記載の方法。
- 前記デバイスを前記アニールする際の水素の最大拡散長が、最近傍のトレンチ同士の間隔の1/2よりも大きい、請求項5に記載の方法。
- 前記p型層上にトンネル接合を成長させることを更に有する請求項5に記載の方法。
- p型層と、
n型層と、
前記p型層と前記n型層との間に配置されたIII族窒化物発光層と、
前記p型層の少なくとも一部と接触するとともに前記n型層によって覆われた少なくとも1つの埋め込まれたトレンチであり、前記p型層の前記少なくとも一部を周囲環境に露出させるように構成された少なくとも1つの埋め込まれたトレンチと、
を有するデバイス。 - 前記少なくとも1つの埋め込まれたトレンチは、当該デバイスの側面まで延在している、請求項10に記載のデバイス。
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US201662339448P | 2016-05-20 | 2016-05-20 | |
US62/339,448 | 2016-05-20 | ||
EP16179661 | 2016-07-15 | ||
EP16179661.0 | 2016-07-15 | ||
PCT/US2017/032234 WO2017200845A1 (en) | 2016-05-20 | 2017-05-11 | Method of forming a p-type layer for a light emitting device |
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JP2020131423A Active JP7043551B2 (ja) | 2016-05-20 | 2020-08-03 | 発光デバイスのp型層を形成する方法 |
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JP (2) | JP6745361B2 (ja) |
KR (2) | KR102135836B1 (ja) |
CN (1) | CN109690783B (ja) |
TW (1) | TWI742082B (ja) |
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JP7323783B2 (ja) | 2019-07-19 | 2023-08-09 | 日亜化学工業株式会社 | 発光装置の製造方法及び発光装置 |
JPWO2022196374A1 (ja) * | 2021-03-18 | 2022-09-22 | ||
JP7344434B2 (ja) * | 2021-09-10 | 2023-09-14 | 日亜化学工業株式会社 | 発光素子の製造方法 |
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US4178197A (en) * | 1979-03-05 | 1979-12-11 | International Business Machines Corporation | Formation of epitaxial tunnels utilizing oriented growth techniques |
JP3298390B2 (ja) * | 1995-12-11 | 2002-07-02 | 日亜化学工業株式会社 | 窒化物半導体多色発光素子の製造方法 |
US6537838B2 (en) * | 2001-06-11 | 2003-03-25 | Limileds Lighting, U.S., Llc | Forming semiconductor structures including activated acceptors in buried p-type III-V layers |
JP3833674B2 (ja) | 2004-06-08 | 2006-10-18 | 松下電器産業株式会社 | 窒化物半導体レーザ素子 |
JP3904571B2 (ja) * | 2004-09-02 | 2007-04-11 | ローム株式会社 | 半導体発光装置 |
JP2007042944A (ja) * | 2005-08-04 | 2007-02-15 | Rohm Co Ltd | 窒化物半導体素子の製法 |
WO2007065005A2 (en) * | 2005-12-02 | 2007-06-07 | The Regents Of University Of California | Improved horizontal emitting, vertical emitting, beam shaped, distributed feedback (dfb) lasers fabricated by growth over a patterned substrate with multiple overgrowth |
JP2008117922A (ja) | 2006-11-02 | 2008-05-22 | Yamaguchi Univ | 半導体発光素子及びその製造方法 |
JP5181924B2 (ja) * | 2008-08-21 | 2013-04-10 | ソニー株式会社 | 半導体発光素子及びその製造方法、並びに、下地に設けられた凸部、下地における凸部形成方法 |
JP5442229B2 (ja) * | 2008-09-04 | 2014-03-12 | ローム株式会社 | 窒化物半導体素子の製造方法 |
CN102593284B (zh) | 2012-03-05 | 2014-06-18 | 映瑞光电科技(上海)有限公司 | 隔离深沟槽及其高压led芯片的制造方法 |
WO2013152231A1 (en) * | 2012-04-04 | 2013-10-10 | The Regents Of The University Of California | Light emitting devices with embedded void-gap structures through techniques of closure of voids |
US20130270514A1 (en) * | 2012-04-16 | 2013-10-17 | Adam William Saxler | Low resistance bidirectional junctions in wide bandgap semiconductor materials |
CN103378238B (zh) * | 2012-04-25 | 2016-01-20 | 清华大学 | 发光二极管 |
JP6067401B2 (ja) * | 2013-02-13 | 2017-01-25 | 学校法人 名城大学 | 半導体発光素子、及び、その製造方法 |
JP2015162631A (ja) * | 2014-02-28 | 2015-09-07 | サンケン電気株式会社 | 発光素子 |
CN104934509A (zh) | 2015-05-29 | 2015-09-23 | 上海芯元基半导体科技有限公司 | Iii-v族氮化物半导体外延结构、包含该外延结构的器件及其制备方法 |
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