JP6742309B2 - トランジスタデバイスの生成方法 - Google Patents
トランジスタデバイスの生成方法 Download PDFInfo
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- JP6742309B2 JP6742309B2 JP2017521522A JP2017521522A JP6742309B2 JP 6742309 B2 JP6742309 B2 JP 6742309B2 JP 2017521522 A JP2017521522 A JP 2017521522A JP 2017521522 A JP2017521522 A JP 2017521522A JP 6742309 B2 JP6742309 B2 JP 6742309B2
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- gate
- oxide semiconductor
- dielectric
- semiconductor channel
- tfts
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- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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Description
Claims (5)
- トランジスタデバイスを生成する方法であって、(a)金属有機前駆体の溶液から前駆体薄膜を形成し、150℃と350℃との間の温度において水の存在下で前記前駆体薄膜をアニーリングすることによって酸化膜半導体チャネル材料の堆積物を形成するステップと、(b)80℃未満の最大処理温度による堆積プロセスによって前記酸化膜半導体チャネル材料の堆積物の上に有機ポリマーゲート誘電体を堆積するステップとを含む、方法。
- 前記酸化膜半導体チャネル材料の堆積物は、前記有機ポリマーゲート誘電体の堆積前に、10%〜30%の金属水酸化物種を含む、請求項1に記載の方法。
- 前記金属有機前駆体は、アルコールまたは水溶媒中に溶解されている金属アルコキシドまたは金属硝酸塩である、請求項1または2に記載のトランジスタデバイスを生成する方法。
- 前記酸化膜半導体チャネル材料の堆積物は、前記有機ポリマーゲート誘電体の堆積後に、少なくとも10%の金属水酸化物種を含む、請求項1〜3のいずれか一項に記載のトランジスタデバイスを生成する方法。
- トランジスタデバイスを生成する方法であって、(a)金属有機前駆体の溶液から前駆体薄膜を形成し、150℃と350℃との間の温度において水の存在下で前記前駆体薄膜をアニーリングすることによって酸化膜半導体チャネル材料の堆積物を形成するステップと、(b)前記酸化膜半導体チャネル材料の堆積物の上に有機ポリマーゲート誘電体を堆積するステップとを含み、
前記酸化膜半導体チャネル材料の堆積物は、前記有機ポリマーゲート誘電体の堆積後に、少なくとも10%の金属水酸化物種を含む、方法。
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GBGB1418610.0A GB201418610D0 (en) | 2014-10-20 | 2014-10-20 | Transistor devices |
PCT/EP2015/074264 WO2016062715A2 (en) | 2014-10-20 | 2015-10-20 | Transistor devices |
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CN108615505B (zh) * | 2018-05-14 | 2019-12-10 | 京东方科技集团股份有限公司 | 驱动晶体管的参数侦测方法及装置、补偿方法 |
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US6215130B1 (en) * | 1998-08-20 | 2001-04-10 | Lucent Technologies Inc. | Thin film transistors |
EP1243034A1 (en) * | 1999-12-21 | 2002-09-25 | Plastic Logic Limited | Solution processed devices |
US6812509B2 (en) * | 2002-06-28 | 2004-11-02 | Palo Alto Research Center Inc. | Organic ferroelectric memory cells |
DE602004017858D1 (de) * | 2003-05-12 | 2009-01-02 | Cambridge Entpr Ltd | Polymerer transistor |
KR100995451B1 (ko) * | 2003-07-03 | 2010-11-18 | 삼성전자주식회사 | 다층 구조의 게이트 절연막을 포함하는 유기 박막 트랜지스터 |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
JP2007258282A (ja) * | 2006-03-20 | 2007-10-04 | Seiko Epson Corp | 半導体装置、半導体装置の製造方法および記憶装置 |
US8258021B2 (en) * | 2007-10-26 | 2012-09-04 | Palo Alto Research Center Incorporated | Protecting semiconducting oxides |
JP5444342B2 (ja) * | 2008-07-18 | 2014-03-19 | パナソニック株式会社 | 半導体デバイスおよびチャネル形成方法 |
JP2010251591A (ja) * | 2009-04-17 | 2010-11-04 | Konica Minolta Holdings Inc | 薄膜トランジスタおよび該薄膜トランジスタの製造方法 |
JP2010258057A (ja) * | 2009-04-22 | 2010-11-11 | Konica Minolta Holdings Inc | 金属酸化物半導体、その製造方法、及びそれを用いた薄膜トランジスタ |
CN102893368B (zh) * | 2010-09-13 | 2016-01-27 | 松下电器产业株式会社 | 用于制造金属氧化物半导体的方法 |
CN103403903B (zh) * | 2010-10-07 | 2017-02-15 | 乔治亚州技术研究公司 | 场效应晶体管及其制造方法 |
JP6064314B2 (ja) * | 2010-11-29 | 2017-01-25 | 株式会社リコー | 金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法 |
EP2668310B1 (en) * | 2011-01-28 | 2017-08-02 | Northwestern University | Low-temperature fabrication of metal oxide thin films and nanomaterial-derived metal composite thin films |
JP5929132B2 (ja) * | 2011-11-30 | 2016-06-01 | 株式会社リコー | 金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法 |
KR101606305B1 (ko) * | 2011-12-28 | 2016-03-24 | 인텔 코포레이션 | 적층된 트랜지스터들을 포함하는 집적회로 장치 및 그 제조방법 |
WO2013159150A1 (en) * | 2012-04-27 | 2013-10-31 | Commonwealth Scientific And Industrial Research Organisation | Solution-processed low temperature amorphous thin films |
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US9035287B2 (en) | 2013-02-01 | 2015-05-19 | Polyera Corporation | Polymeric materials for use in metal-oxide-semiconductor field-effect transistors |
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WO2016062715A3 (en) | 2016-06-16 |
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US10573759B2 (en) | 2020-02-25 |
EP3207571A2 (en) | 2017-08-23 |
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WO2016062715A2 (en) | 2016-04-28 |
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