JP6720861B2 - マルチビーム用アパーチャセット及びマルチ荷電粒子ビーム描画装置 - Google Patents
マルチビーム用アパーチャセット及びマルチ荷電粒子ビーム描画装置 Download PDFInfo
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- 239000002245 particle Substances 0.000 title claims description 22
- 238000007493 shaping process Methods 0.000 claims description 48
- 238000010894 electron beam technology Methods 0.000 description 27
- 239000000758 substrate Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000005461 Bremsstrahlung Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0015—Production of aperture devices, microporous systems or stamps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
- H01J2237/0435—Multi-aperture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0451—Diaphragms with fixed aperture
- H01J2237/0453—Diaphragms with fixed aperture multiple apertures
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electron Beam Exposure (AREA)
Description
20 シールド板
30 ブランキングアパーチャアレイ
40 実装基板
60 プレシールド板
100 描画装置
101 基板
102 電子鏡筒
103 描画室
111 電子銃
Claims (4)
- 複数の第1開口が形成され、前記複数の第1開口全体が含まれる領域に、放出部から放出された荷電粒子ビームの照射を受け、前記複数の第1開口を前記荷電粒子ビームの一部がそれぞれ通過することによりマルチビームを形成する成形アパーチャアレイと、
前記複数の第1開口を通過したマルチビームのうち、それぞれ対応するビームが通過する複数の第2開口が形成された第1シールド板と、
前記複数の第1開口及び前記複数の第2開口を通過したマルチビームのうち、それぞれ対応するビームが通過する複数の第3開口が形成され、各第3開口にビームのブランキング偏向を行うブランカが設けられたブランキングアパーチャアレイと、
を備え、
前記第2開口は前記第1開口よりも広く、
前記第2開口は前記第3開口よりも狭く、
前記成形アパーチャアレイから前記第1シールド板までの距離をd1、前記成形アパーチャアレイから前記ブランキングアパーチャアレイまでの距離をd2、前記第2開口の径をw2、前記第3開口の径をw3とした場合、w2<w3×(d1/d2)となっていることを特徴とするマルチビーム用アパーチャセット。 - 前記第1シールド板の板厚は、前記第1シールド板における前記荷電粒子ビームの飛程より大きいことを特徴とする請求項1に記載のマルチビーム用アパーチャセット。
- 前記成形アパーチャアレイと前記第1シールド板との間に設けられ、前記複数の第1開口を通過したマルチビームのうち、それぞれ対応するビームが通過する複数の第4開口が形成された第2シールド板をさらに備えることを特徴とする請求項1又は2に記載のマルチビーム用アパーチャセット。
- 荷電粒子ビームを放出する放出部と、
複数の第1開口が形成され、前記複数の第1開口全体が含まれる領域に前記荷電粒子ビームの照射を受け、前記複数の第1開口を前記荷電粒子ビームの一部がそれぞれ通過することによりマルチビームを形成する成形アパーチャアレイと、
前記複数の第1開口を通過したマルチビームのうち、それぞれ対応するビームが通過する複数の第2開口が形成された第1シールド板と、
前記複数の第1開口及び前記複数の第2開口を通過したマルチビームのうち、それぞれ対応するビームが通過する複数の第3開口が形成され、各第3開口にビームのブランキング偏向を行うブランカが設けられたブランキングアパーチャアレイと、
を備え、
前記第2開口は前記第1開口よりも広く、
前記第2開口は前記第3開口よりも狭く、
前記成形アパーチャアレイから前記第1シールド板までの距離をd1、前記成形アパーチャアレイから前記ブランキングアパーチャアレイまでの距離をd2、前記第2開口の径をw2、前記第3開口の径をw3とした場合、w2<w3×(d1/d2)となっていることを特徴とするマルチ荷電粒子ビーム描画装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016255362A JP6720861B2 (ja) | 2016-12-28 | 2016-12-28 | マルチビーム用アパーチャセット及びマルチ荷電粒子ビーム描画装置 |
TW106142868A TWI663624B (zh) | 2016-12-28 | 2017-12-07 | 多射束用孔徑套組及多帶電粒子束描繪裝置 |
US15/854,303 US10211023B2 (en) | 2016-12-28 | 2017-12-26 | Aperture set for multi-beam and multi-charged particle beam writing apparatus |
KR1020170179590A KR102025602B1 (ko) | 2016-12-28 | 2017-12-26 | 멀티 빔용 애퍼쳐 세트 및 멀티 하전 입자 빔 묘화 장치 |
CN201711443336.5A CN108255022B (zh) | 2016-12-28 | 2017-12-27 | 多波束用孔组及多带电粒子束描绘装置 |
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JP2016255362A JP6720861B2 (ja) | 2016-12-28 | 2016-12-28 | マルチビーム用アパーチャセット及びマルチ荷電粒子ビーム描画装置 |
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JP2018107393A JP2018107393A (ja) | 2018-07-05 |
JP6720861B2 true JP6720861B2 (ja) | 2020-07-08 |
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US (1) | US10211023B2 (ja) |
JP (1) | JP6720861B2 (ja) |
KR (1) | KR102025602B1 (ja) |
CN (1) | CN108255022B (ja) |
TW (1) | TWI663624B (ja) |
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WO2019031093A1 (en) * | 2017-08-08 | 2019-02-14 | Mapper Lithography Ip B.V. | CHARGED PARTICLE BLOCKING ELEMENT, EXPOSURE APPARATUS COMPRISING SUCH AN ELEMENT, AND METHOD OF USING SUCH AN EXPOSURE APPARATUS |
JP6819509B2 (ja) * | 2017-08-10 | 2021-01-27 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置 |
JP2022185486A (ja) * | 2021-06-02 | 2022-12-14 | 株式会社ニューフレアテクノロジー | ブランキングアパーチャアレイユニット |
WO2023247067A1 (en) * | 2022-06-23 | 2023-12-28 | Carl Zeiss Multisem Gmbh | Multi-beam system and multi-beam forming unit with reduced sensitivity to secondary radiation |
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- 2017-12-07 TW TW106142868A patent/TWI663624B/zh active
- 2017-12-26 KR KR1020170179590A patent/KR102025602B1/ko active IP Right Grant
- 2017-12-26 US US15/854,303 patent/US10211023B2/en active Active
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CN108255022A (zh) | 2018-07-06 |
KR102025602B1 (ko) | 2019-10-02 |
TW201830452A (zh) | 2018-08-16 |
US10211023B2 (en) | 2019-02-19 |
JP2018107393A (ja) | 2018-07-05 |
CN108255022B (zh) | 2020-08-07 |
US20180182593A1 (en) | 2018-06-28 |
KR20180077059A (ko) | 2018-07-06 |
TWI663624B (zh) | 2019-06-21 |
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