JP6719615B1 - Semiconductor processing tape - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor processing tape capable of performing a heat treatment step and a semiconductor chip pickup step with one adhesive tape even when the heat treatment step involving heat of 150° C. or higher is included. provide. A tape for semiconductor processing, in which an adhesive layer is formed on a base film, wherein the base film contains a polyarylene ether ketone. [Selection diagram] None

Description

The present invention relates to a semiconductor processing tape capable of consistently performing a processing step involving heat of 150° C. or higher and a step of separating a semiconductor wafer into semiconductor chips and picking up the semiconductor chips.

A semiconductor chip is usually formed by slicing a high-purity semiconductor single crystal or the like into a wafer, forming a desired circuit pattern on the front surface of the wafer with a photoresist, and polishing the back surface of the wafer with a polishing machine to remove the wafer. It can be obtained by reducing the thickness to a desired thickness and finally dicing into individual pieces.

In the manufacture of the above semiconductor chip, the semiconductor wafer is reinforced by an adhesive tape for protecting the semiconductor wafer in order to facilitate handling of the semiconductor wafer during processing and prevent damage to the semiconductor wafer. For example, when a thick film wafer cut out from high-purity silicon single crystal or the like is ground to a predetermined thickness to form a thin film wafer, a wafer grinding step with an adhesive tape attached for the purpose of protecting the wafer May occur. Further, in the dicing process, the semiconductor wafer is diced while being stuck and fixed on an adhesive tape called a dicing tape, and is molded into individual semiconductor chips to pick up the semiconductor chips (Patent Document 1).

On the other hand, in recent years, along with the improvement in performance of semiconductor chips, there is a case where a step of performing a high temperature process or a process involving heat generation is performed on the surface of a semiconductor wafer. For example, in a semiconductor chip manufacturing process, a semiconductor wafer may be subjected to heat treatment at a temperature of 150° C. or higher. Therefore, the adhesive tape protecting the semiconductor wafer is required to have heat resistance. However, the conventional dicing tape does not have sufficient heat resistance and cannot support heat treatment at a temperature of 150° C. or higher. From the above, when it is necessary to subject the surface of the semiconductor wafer to high temperature processing or processing involving heat generation, it is necessary to separately prepare an adhesive tape and a dicing tape for protecting the semiconductor wafer. Therefore, it is necessary to transfer the semiconductor wafer to the dicing tape after heating the semiconductor wafer, which complicates the manufacturing process of the semiconductor chip and lowers the yield of the semiconductor chip.

Therefore, it is considered to protect the semiconductor wafer during the heat treatment and protect the semiconductor wafer during the dicing with a single adhesive tape. However, if the heat resistance of the adhesive tape is improved, there is a problem that a defect occurs in the semiconductor chip pickup process. When picking up a semiconductor chip, usually, the semiconductor chip is picked up after the expanding step of expanding the adhesive tape in order to widen the gap between the semiconductor chips. However, if the heat resistance of the pressure-sensitive adhesive tape is improved, the flexibility of the pressure-sensitive adhesive tape is reduced, so that the distance between the semiconductor chips cannot be sufficiently widened. On the other hand, when a large stress is applied to the adhesive tape having improved heat resistance in order to sufficiently widen the distance between the semiconductor chips in the expanding step, the adhesive tape may be separated from the ring frame holding the adhesive tape. There was a problem.

Further, in the manufacturing process of the semiconductor chip, a process of partially processing the semiconductor wafer or the semiconductor chip and temporarily storing it may be provided. However, if the heat resistance of the adhesive tape is improved, the yield point of the adhesive tape will be reached with a low elongation amount, so the expanded adhesive tape will not be restored, and as a result, the manufacturing process of the semiconductor chip may not be interrupted. is there.

JP 05-114647 A

In view of the above circumstances, the present invention can perform the heat treatment step and the semiconductor chip pickup step with one adhesive tape even if the present invention has a heat treatment step involving heat of 150° C. or higher. An object of the present invention is to provide a semiconductor processing tape that can be manufactured.

The present inventors are a pressure-sensitive adhesive tape having a pressure-sensitive adhesive layer formed on a base film, wherein the base film uses a pressure-sensitive adhesive tape containing polyarylene ether ketone, thereby consistently performing a heat treatment step and a pickup step. They have found that they can be carried out, and have completed the present invention.

The gist of the configuration of the present invention is as follows.
[1] A semiconductor processing tape having an adhesive layer formed on a base film,
A tape for semiconductor processing, wherein the base film contains polyarylene ether ketone.
[2] The tape for semiconductor processing according to [1], which is used to divide a semiconductor wafer into semiconductor chips.
[3] The tape for semiconductor processing according to [1] or [2], wherein the yield point in the longitudinal direction is in the range of 2% or more and 100% or less.
[4] The tape for semiconductor processing according to [1] or [2], wherein the crystallinity of the polyarylene ether ketone in the base film is 10% or more and 35% or less.
[5] The dimensional change rate in the longitudinal direction and the dimensional change rate in the direction orthogonal to the longitudinal direction after holding the semiconductor processing tape in an atmosphere of 260° C. for 3 minutes are both 3% or less. 1] or the tape for semiconductor processing according to [2].
[6] Dimensional change rate in the longitudinal direction after holding the semiconductor processing tape in an atmosphere of 260° C. for 3 minutes and in the longitudinal direction after holding the semiconductor processing tape in an atmosphere of 260° C. for 3 minutes The tape for semiconductor processing according to [1] or [2], in which the difference in the dimensional change rate in the orthogonal direction is 5% or less.

According to the aspect of the present invention, even when the base film contains the polyarylene ether ketone and thus has a heat treatment step involving heat of 150° C. or higher, the heat treatment step can be performed with one adhesive tape. It is possible to perform a semiconductor chip pick-up step and prevent the adhesive tape from being separated from the ring frame during the expanding step. Therefore, the manufacturing process of the semiconductor chips can be simplified and the yield of the semiconductor chips can be improved.

According to the aspect of the present invention, the yield point in the longitudinal direction is 2% or more and 100% or less, so that the expanded adhesive tape is reliably restored while the gap between the semiconductor chips is smoothly widened in the expanding step. As a result, interruption of the semiconductor chip manufacturing process is facilitated. Further, the heat resistance of the semiconductor processing tape is surely improved.

According to the aspect of the present invention, the crystallinity of the polyarylene ether ketone in the base material film is 10% or more and 35% or less, so that the heat resistance of the base material film is reliably improved and the heat resistance during heat treatment is increased. While the deformation of the base film is surely prevented, the embrittlement of the base film can be surely prevented.

According to the aspect of the present invention, the dimensional change rate in the longitudinal direction and the dimensional change rate in the direction orthogonal to the longitudinal direction after holding the semiconductor processing tape in an atmosphere of 260° C. for 3 minutes are both 3%. The following can surely prevent the wafer from falling off the semiconductor processing tape during the heat treatment.

According to the aspect of the present invention, the difference between the dimensional change rate in the longitudinal direction and the dimensional change rate in the direction orthogonal to the longitudinal direction after the semiconductor processing tape is held in the atmosphere at 260° C. for 3 minutes is 5% or less. By so doing, it is possible to more reliably prevent the wafer from falling off the semiconductor processing tape during the heat treatment.

The semiconductor processing tape of the present invention is an adhesive tape in which an adhesive is formed in layers on a base film. The base film contains polyarylene ether ketone as a material.

As the base film, a film formed of a polyarylene ether ketone (PAEK) resin (hereinafter, also referred to as “PAEK film”) is used. Since the base film formed of PAEK resin has excellent heat resistance, it is suitable for use in a heat treatment step involving heat of 150° C. or higher. Examples of the resin type of the PAEK resin include polyetherketone, polyetheretherketone (PEEK), polyetherketoneketone, and polyetheretherketoneketone. These PAEK resins may be used alone or in combination of two or more kinds. Of these, polyether ether ketone is preferable because it is superior in heat resistance and manufacturability.

The method of forming the PAEK film is not particularly limited, and a known film forming method can be used. A PAEK film such as a film formed of a PEEK resin (hereinafter, also referred to as “PEEK film”) may be formed by, for example, an extrusion method or a solvent casting method. Moreover, after forming into a film shape, an annealing treatment may be performed. A commercially available product may be used as the PEEK film. Specific examples of commercially available products include APTIV film series manufactured by VICTREX and FS-1100 series manufactured by Sumitomo Bakelite Co., Ltd.

The base film may contain a resin other than PAEK. The resin other than PAEK is not particularly limited, but a resin having a glass transition temperature (Tg) of 150° C. or higher is suitable because it corresponds to the conditions for forming the base film and the heat treatment process of the wafer accompanied by heat of 150° C. or higher. preferable. Examples of the resin having Tg of 150° C. or higher include polyetherimide, polyamideimide, polyethersulfone, polysulfone, polyarylate, polyphenylene ether, liquid crystal polymer and polyester. These may be used alone or in combination of two or more.

When a resin other than PAEK is contained, the ratio of the PAEK resin and the resin other than PAEK is not particularly limited, but from the viewpoint of heat resistance, it is preferably 10 parts by mass or more and 150 parts by mass or less with respect to 100 parts by mass of the PAEK resin. , 20 parts by mass or more and 100 parts by mass or less are particularly preferable.

The thickness of the substrate film is not particularly limited, but the lower limit value thereof is preferably 10 μm, and particularly preferably 25 μm, from the viewpoint of more reliably reinforcing the semiconductor wafer. On the other hand, the upper limit of the thickness of the base film is preferably 200 μm, and particularly preferably 100 μm from the viewpoint that the expanding process can be made smoother and the semiconductor chip can be reliably picked up.

The lower limit of the yield point in the longitudinal direction of the base film is preferably 2.0%, because the expanding process is made smoother and the distance between the diced semiconductor chips is surely increased. % Is more preferable, and 5.0% is particularly preferable. On the other hand, the upper limit of the yield point in the longitudinal direction of the base film is that the expanded adhesive tape is reliably restored, making it easier to interrupt the manufacturing process of semiconductor chips, and the heat resistance of the semiconductor processing tape. Is 100%, 90% is more preferable, 60% is further preferable, and 50% is particularly preferable, since the deformation resistance can be surely obtained even when subjected to heat load. Here, the longitudinal direction of the base film is the flow direction when the base film is formed.

Further, the crystallinity of PAEK contained in the base film is not particularly limited, but the lower limit value thereof ensures that the heat resistance of the base film is improved and the deformation resistance is ensured even when subjected to heat load. From the viewpoint of being obtained, 10% is preferable, 15% is more preferable, and 18% is particularly preferable. On the other hand, the upper limit of the crystallinity of PAEK is preferably 35%, more preferably 30%, and particularly preferably 25% from the viewpoint of surely preventing the embrittlement of the base film.

In addition, the dimensional change rate of the base film after being held in an atmosphere of 260° C. for 3 minutes can reliably prevent the wafer from coming off from the semiconductor processing tape during the heat treatment. The rate of change and the rate of dimensional change in the direction orthogonal to the longitudinal direction (width direction) are both preferably 3% or less, more preferably 2% or less, and particularly preferably 1% or less.

In addition, the difference between the dimensional change rate in the longitudinal direction of the substrate film after being held in an atmosphere of 260° C. for 3 minutes and the dimensional change rate in the width direction after being kept in an atmosphere of 260° C. for 3 minutes is 5% or less is preferable, 3% or less is more preferable, and 1% or less is particularly preferable from the viewpoint that the wafer can be surely prevented from falling off from the semiconductor processing tape during the heat treatment.

The range of the yield point in the longitudinal direction and the range of the dimensional change rate of the above-mentioned substrate film are set appropriately by the tensile conditions at the time of extrusion when molding the raw material resin into a film and the conditions at the time of annealing the film. It can be adjusted. For example, in the case of a PAEK resin (for example, PEEK resin) having a mass average molecular weight of 5,000 or more and 2,000,000 or less, which is generally used as a material for a tape, the take-up line speed during extrusion is adjusted, and if necessary, further , The molded film, while adjusting the heating temperature and the heating time, by suppressing the tension to the film and performing an annealing treatment, within the range of the yield point in the longitudinal direction, the substrate film within the range of the dimensional change rate. Obtainable.

The adhesive layer described below formed on the base film has almost no effect on the yield point and the dimensional change rate as compared with the base film, so that the base film has the above-mentioned yield point range and dimensional change rate. By providing the range, the tape for semiconductor processing of the present invention can have the above range of yield point and range of dimensional change.

The adhesive constituting the adhesive layer of the semiconductor processing tape is not particularly limited, and known adhesives can be used, and examples thereof include acrylic, epoxy, allyl, silicone, and fluorine adhesives. To be Of these, acrylic adhesives are preferable because they have excellent heat resistance and the adhesive strength is easily adjusted.

Either a curable adhesive or a non-curable adhesive can be used as the adhesive, but curing the adhesive before heat treatment suppresses adhesion promotion due to heat during heat treatment, leaving adhesive residue. A curable pressure-sensitive adhesive is preferable because a semiconductor chip can be picked up without it.

Examples of the curable pressure-sensitive adhesive include a photo-curable pressure-sensitive adhesive that is crosslinked and cured by irradiation with light such as ultraviolet rays, and a thermosetting pressure-sensitive adhesive that is crosslinked and cured by heating. Examples of the photocurable pressure-sensitive adhesive include a photocurable pressure-sensitive adhesive that is a composition containing a polymerizable polymer as a main component and a photopolymerization initiator. Examples of the thermosetting pressure-sensitive adhesive include a thermosetting pressure-sensitive adhesive which is a composition containing a polymerizable polymer as a main component and a thermal polymerization initiator.

As the polymerizable polymer, for example, a (meth)acrylic polymer having a first functional group is synthesized in advance, and a second functional group that reacts with the first functional group and a radical-polymerizable unsaturated bond are formed. It can be obtained by reacting a compound having: with a (meth)acrylic polymer having the first functional group.

The (meth)acrylic polymer having the first functional group has an alkyl acrylate and/or methacrylic acid alkyl ester whose alkyl group usually has a carbon number in the range of 2 to 18 as a main monomer, It can be obtained by copolymerizing the first functional group-containing monomer and, if necessary, another monomer copolymerizable therewith. The mass average molecular weight of the (meth)acrylic polymer having the first functional group is, for example, 200,000 to 2,000,000. The "mass average molecular weight" means a mass average molecular weight calculated by polystyrene measurement by measuring at room temperature using gel permeation chromatography (GPC).

Examples of the first functional group-containing monomer include carboxyl group-containing monomers such as acrylic acid and methacrylic acid, hydroxyl group-containing monomers such as hydroxyethyl acrylate and hydroxyethyl methacrylate, and epoxies such as glycidyl acrylate and glycidyl methacrylate. Examples thereof include a group-containing monomer, an isocyanate group-containing monomer such as isocyanate ethyl acrylate and isocyanate ethyl methacrylate, and an amino group-containing monomer such as aminoethyl acrylate and aminoethyl methacrylate.

Examples of other monomers include various polymerizable monomers used for (meth)acrylic polymers such as vinyl acetate, acrylonitrile, and styrene.

Examples of the compound having the second functional group and the radically polymerizable unsaturated bond include the above-mentioned first functional group depending on the first functional group of the (meth)acrylic polymer having the first functional group. Compounds similar to the containing monomer can be used. For example, when the first functional group is a carboxyl group, a compound containing an epoxy group or a compound containing an isocyanate group is used as the second functional group. When the first functional group is a hydroxyl group, a compound containing an isocyanate group is used as the second functional group. When the first functional group is an epoxy group, a compound containing a carboxyl group or a compound containing an amide group such as acrylamide is used as the second functional group. When the first functional group is an amino group, a compound containing an epoxy group is used as the second functional group.

Examples of the photopolymerization initiator include those activated by irradiation with light having a wavelength of 250 to 800 nm. Examples of such a photopolymerization initiator include acetophenone-based photopolymerization initiators such as dimethylaminoacetophenone and methoxyacetophenone, and benzoin-based light such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, and benzoin isobutyl ether. Polymerization initiators, ketal photopolymerization initiators such as benzyl dimethyl ketal and acetophenone diethyl ketal, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis Phosphine oxide photopolymerization initiators such as (2,6-dimethoxybenzoyl)-2,4,4-trimethyl-pentylphosphine oxide and (2,4,6-trimethylbenzoyl)ethoxyphenylphosphine oxide, and ethanone 1-[ 9-Ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-1-(0-acetyloxime), 2-(acetyloxyiminomethyl)thioxanthen-9-one, 1,8- Octanedione,1,8-bis[9-ethyl-6-nitro-9H-carbazol-3-yl]-,1,8-bis(O-acetyloxime),1,8-octanedione,1,8- Bis[9-(2-ethylhexyl)-6-nitro-9H-carbazol-3-yl]-,1,8-bis(O-acetyloxime), (Z)-(9-ethyl-6-nitro-9H Examples include oxime ester-based photopolymerization initiators such as -carbazol-3-yl)(4-((1-methoxypropan-2-yl)oxy)-2-methylphenyl)methanone O-acetyloxime. Further, as the photopolymerization initiator, bis(η5-cyclopentadienyl)titanocene derivative compound, benzophenone, Michler's ketone, chlorothioxanthone, todecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, α-hydroxycyclohexylphenyl ketone, 2-hydroxymethyl Examples include phenyl propane and the like. These photopolymerization initiators may be used alone or in combination of two or more kinds.

Examples of the thermal polymerization initiator include those that are decomposed by heat to generate active radicals that initiate polymerization and curing. Specifically, for example, dicumyl peroxide, di-t-butyl peroxide, t-butyl peroxybenzole, t-butyl hydroperoxide, benzoyl peroxide, cumene hydroperoxide, diisopropylbenzene hydroperoxide, Paramenthane hydroperoxide, di-t-butyl peroxide, etc. are mentioned. Examples of commercially available thermal polymerization initiators include perbutyl D, perbutyl H, perbutyl P, perpenta H (all of which are manufactured by NOF CORPORATION). These thermal polymerization initiators may be used alone or in combination of two or more kinds.

A radical-polymerizable polyfunctional oligomer or monomer may be further added to the photocurable adhesive or the thermosetting adhesive. By adding a radically polymerizable polyfunctional oligomer or monomer, photocurability and thermosetting property are further improved. The polyfunctional oligomer or monomer preferably has a molecular weight of 10,000 or less, and has a molecular weight of 5,000 or less and an intramolecular radical polymerizable property so that the three-dimensional reticulation of the adhesive by heating or irradiation of light can be efficiently performed. Particularly preferred are compounds having 2 to 20 unsaturated bonds.

Examples of the polyfunctional oligomer or monomer include bifunctional (meth)acrylates such as 1,4-butylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, and polyethylene glycol di(meth)acrylate. Compounds, trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol Examples include tri- or higher functional (meth)acrylate compounds such as hexa(meth)acrylate. These polyfunctional oligomers or monomers may be used alone or in combination of two or more.

The curable pressure-sensitive adhesive may further contain a silicone compound having a functional group capable of crosslinking with the curable pressure-sensitive adhesive. Since the silicone compound is excellent in heat resistance, it prevents sticking of the pressure-sensitive adhesive and the like even after a treatment involving heating at 200° C. or higher, and bleeds out to the adherend interface during peeling to facilitate peeling. Since the silicone compound has a functional group capable of crosslinking with the curable pressure-sensitive adhesive, it is chemically reacted with the curable pressure-sensitive adhesive by light irradiation or heating and is incorporated into the curable pressure-sensitive adhesive. No silicone compounds will adhere to the body and contaminate it. Further, by blending the silicone compound, the effect of preventing adhesive residue on the semiconductor chip is also exerted.

The thickness of the adhesive layer is not particularly limited, but the lower limit thereof is preferably 5 μm from the viewpoint that the adhesive force to the semiconductor wafer or the semiconductor chip is surely imparted and the semiconductor wafer or the semiconductor chip is surely protected. Particularly preferred. On the other hand, the upper limit of the thickness of the adhesive layer is preferably 100 μm, particularly preferably 50 μm, from the viewpoint of preventing the adhesive from remaining on the side surface of the adherend during dicing.

Next, examples of the present invention will be described, but the present invention is not limited to the aspects of the following examples.

Adhesive Preparation Method A reactor equipped with a thermometer, a stirrer, and a cooling pipe was prepared, and in this reactor, 94 parts by mass of 2-ethylhexyl acrylate as a (meth)acrylic acid alkyl ester and a first functional group-containing monomer were prepared. After adding 6 parts by mass of hydroxyethyl methacrylate, 0.01 parts by mass of lauryl mercaptan and 80 parts by mass of ethyl acetate, the reactor was heated to start reflux. Next, 0.01 part by mass of 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane was added as a polymerization initiator into the reactor, and the polymerization was initiated under reflux. It was Next, 0.01 hour by mass of 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane was added 1 hour and 2 hours after the initiation of the polymerization, and the initiation of the polymerization was further started. 4 hours later, 0.05 part by mass of t-hexyl peroxypivalate was added to continue the polymerization reaction. Then, 8 hours after the initiation of the polymerization, an ethyl acetate solution of a (meth)acrylic polymer having a solid content of 55 mass% and a mass average molecular weight of 600,000 and having a first functional group was obtained. A compound having a second functional group and a radical-polymerizable unsaturated bond with respect to 100 parts by mass of the resin solid content of the ethyl acetate solution containing the obtained (meth)acrylic polymer having the first functional group. Was added and reacted with 3.5 parts by mass of 2-isocyanatoethyl methacrylate to obtain a polymerizable polymer. Thereafter, 20 parts by mass of silicone acrylate, 20 parts by mass of silica filler, 0.5 parts by mass of chemical crosslinking agent, 1 part by mass of photopolymerization initiator, relative to 100 parts by mass of resin solid content of the ethyl acetate solution of the obtained polymerizable polymer. The parts were mixed to obtain an ethyl acetate solution of an acrylic curable adhesive.

The following were used as the silicone acrylate, silica filler, chemical crosslinking agent and photopolymerization initiator.
Silicone acrylate: EBECRYL 350, manufactured by Daicel Ornex Co., Ltd. Silica filler: Leoroseal MT-10, manufactured by Tokuyama Chemical Crosslinker: Coronate L-45, Sekisui Fuller Co., Ltd. Photopolymerization initiator: Esacure One, manufactured by DKSH Japan Co., Ltd.

Substrate film production method Example 1
A PEEK resin “KT820NT” manufactured by Solvay (melt flow rate at 400° C., 3 g/10 min, 2.16 kg) was extrusion-molded at a linear velocity during extrusion of 10 m/min to obtain a film having a thickness of 50 μm. The substrate film of Example 1 was produced by quenching the obtained film immediately after extrusion molding.
Example 2
The base film of Example 1 was further annealed at 300° C. for 2 hours under a tension of 30 N to obtain a base film of Example 2.
Example 3
A substrate film of Example 3 was obtained in the same manner as in Example 1 except that the tensile condition during extrusion was changed to 5 m/min.
Example 4
The base film of Example 1 was further annealed at 280° C. for 1 hour with a tension of 30 N to obtain a base film of Example 4.
Example 5
The base film of Example 1 was further annealed at 280° C. for 0.5 hours under a tension of 30 N to obtain a base film of Example 5.
Example 6
PEEK resins “KT820NT” and “KT880NT” (melt flow rate at 400° C. 36 g/10 min, 2.16 kg) manufactured by Solvay were extruded at a mass ratio of 5:5 to obtain a film having a thickness of 50 μm. The linear velocity during extrusion was set to 5 m/min. The obtained film was quenched immediately after extrusion molding to prepare a base film of Example 6.
Example 7
The base film of Example 6 was annealed at 300° C. for 1 hour with a tension of 30 N to obtain a base film of Example 7.
Example 8
The base film of Example 6 was annealed at 300° C. for 1 hour with a tension of 10 N to obtain a base film of Example 8.
Example 9
The substrate film of Example 9 was obtained by sandwiching the substrate film of Example 6 between flat plates and setting the tension to the substrate film to about 0, and performing an annealing treatment at 300° C. for 1 hour.
Example 10
Solvay PEEK resins “KT820NT” and “KT880NT”, Sumitomo Chemical Co., Ltd. polyether sulfone resin “Sumika Excel 4100G” (melt viscosity at 400° C. is 200 Pas) at a mass ratio of 35:35:30, except for extrusion molding. In the same manner as in Example 9, a substrate film of Example 10 was obtained.

Comparative Example 1
A polyester naphthalate resin film "PENQ53C" manufactured by Teijin Limited was used as a base film.

The base material film prepared as described above was coated with the pressure-sensitive adhesive prepared as described above so that the thickness after drying was 20 μm to obtain each sample.

Evaluation items (1) Yield point Each sample was subjected to a tensile test using an autograph "AG-Xplus" manufactured by Shimadzu Corporation, and the tensile strength at which the tensile stress turned down was taken as the yield point. The conditions for measuring the yield point were room temperature, sample size 10 mm width×distance between chucks 50 mm, and pulling speed 50 mm/min.

(2) Crystallinity A differential scanning calorimeter (“DSC-60plus” manufactured by Shimadzu Corporation) was used to perform differential scanning calorimetry (DSC) on each substrate film, and the crystallinity was calculated from the crystallization peak area. I asked.

(3) Dimensional change rate Each sample was stored for 3 minutes in a constant temperature bath at 260°C, and the dimensional change rate of each sample before and after storage was measured in the longitudinal direction (MD direction) and the direction orthogonal to the longitudinal direction (TD direction). I asked. The difference was calculated from the dimensional change rates in the MD and TD directions.

(4) Suitability for heating process After the tape, which is each sample bonded to the wafer, is left for 5 minutes in the chamber set to each temperature of 200°C and 260°C, each sample is taken out of the chamber and the peeling condition is visually observed. Was confirmed and evaluated according to the following criteria.
Wafer has no peeling from tape or floating edge: 〇,
Wafer does not come off the tape but floats on the edge: △,
Wafer peeled from tape: ×

(5) Dicing Suitability The wafer that has been subjected to the heating process was diced into 3 mm square pieces with a dicer (Disco DAD 6340) and evaluated according to the following criteria.
Wafers can be separated into individual pieces without problems: ○,
Chip jump at the wafer edge: △,
Unable to fix chuck table: ×

(6) Pickup suitability The individual chips were picked up by a pickup die bonder (DB800HSL) and evaluated according to the following criteria.
Pickup available: Yes,
Not recognized for some chips: △,
I could not recognize the chip at all: ×

The evaluation results are shown in Table 1 below.

From Table 1 above, in Examples 1 to 10, at 200° C., heating step suitability, dicing suitability, and pickup suitability were obtained. In Examples 1 to 10, even when the substrate film has a heat treatment step involving heat of 150° C. or higher by containing the polyether ether ketone which is a polyarylene ether ketone having excellent heat resistance, It has been found that the heat treatment step and the semiconductor chip pickup step can be performed with one tape.

Moreover, in Examples 3 to 10 in which the yield point could be controlled to 2% or more and 100% or less, the heating step suitability was excellent even at 260°C, and the dicing suitability was easily obtained even at 260°C. Therefore, in Examples 3 to 10, the heat resistance of the tape is surely improved, the gap between the semiconductor chips is smoothly widened in the expanding step, and the expanded adhesive tape is surely restored so that the semiconductor chip It has been found that the interruption of the manufacturing process can be made easier. Further, in Examples 4 and 6 to 10 in which the crystallinity of the polyarylene ether ketone could be controlled to 10% or more and 35% or less, the heat resistance of the base film was definitely improved and the base film at the time of heat treatment. It has been found that the deformation of the base film can be surely prevented and the embrittlement of the base film can be surely prevented. Further, in Examples 8 to 10 in which the dimensional change rates in the MD direction and the TD direction could both be controlled to 3% or less, pickup suitability was obtained even at 260° C., and the wafer was removed from the semiconductor processing tape during heat treatment. It turned out that it can be surely prevented from falling off. Moreover, in Examples 8 to 10, the difference between the dimensional change rates in the MD direction and the TD direction could be controlled to 5% or less. Particularly, in Examples 9 and 10 in which the difference between the dimensional change rates in the MD direction and the TD direction could be controlled to 0.5% or less, excellent picking suitability was obtained even at 260° C., and the wafer was processed into a semiconductor during heat treatment. It was found that the tape can be more reliably prevented from falling off.

On the other hand, in Comparative Example 1, the sample could not withstand the heating process at 260° C. and was melted. In Comparative Example 1, heat resistance was not obtained, and therefore, dicing suitability and pickup suitability, which are the steps after the heating step, could not be evaluated.

Claims (4)

A semiconductor processing tape in which an adhesive layer is formed on a base film,
The substrate film contains polyarylene ether ketone,
The dimensional change rate in the longitudinal direction and the dimensional change rate in the direction orthogonal to the longitudinal direction after holding the semiconductor processing tape in an atmosphere of 260° C. for 3 minutes are both 1% or less,
A semiconductor processing tape in which the crystallinity of the polyarylene ether ketone in the base film is 18% or more and 30% or less . The semiconductor processing tape according to claim 1, which is used for dividing a semiconductor wafer into individual semiconductor chips. The semiconductor processing tape according to claim 1, wherein the yield point in the longitudinal direction is in the range of 2% or more and 100% or less. The dimensional change rate in the longitudinal direction after holding the semiconductor processing tape in an atmosphere of 260° C. for 3 minutes and the longitudinal direction after holding the semiconductor processing tape in an atmosphere of 260° C. for 3 minutes The semiconductor processing tape according to claim 1 or 2, wherein the difference in dimensional change rate in the orthogonal direction is 1% or less.