JP6718224B2 - Semiconductor laser light source module, laser light source device, method of manufacturing semiconductor laser light source module, and method of manufacturing laser light source device - Google Patents

Description

The present invention relates to a semiconductor laser light source module that emits light of a plurality of wavelengths and is used for a display or a sensor, a laser light source device, and manufacturing methods thereof.

Conventionally, it is used in various applications such as data reading and image processing by emitting laser light of a predetermined wavelength, optical communication, image display by a projector, medical diagnosis such as endoscopy, and treatment in ophthalmology. There is a laser light source device. In recent years, a technique for incorporating such a laser light source device into a small portable terminal such as a smartphone or a wearable terminal has been attracting attention. In this case, the laser projector device and the laser light source are required to be small, thin and lightweight. Patent Document 1 discloses a technique in which a semiconductor laser element is mounted on a frame and sealed with resin. On the other hand, Patent Document 2 discloses a technique for preventing deterioration of a semiconductor laser element due to reaction with an organic substance by sealing a monochromatic semiconductor laser element with solder and low melting point glass.

Further, there is a technique in which a laser light source device that emits laser light of three primary colors of RGB and infrared (IR) is combined and used for image display processing, particularly for a projection type projector. As a projection type projector, a scan type using a MEMS (Micro Electro Mechanical Systems) or DMD (Digital Micromirror Device) and a type using a LCOS (Liquid Crystal on Silicon) are known.

Japanese Patent No. 3723426 Japanese Patent No. 4678154

In the case where a device for outputting images and videos of various colors by emitting lights of a plurality of wavelengths and combining them is built in a small terminal, further miniaturization, lightening, thinning, and miniaturization are required. However, when a plurality of semiconductor laser light source devices for a plurality of wavelengths are arranged as described above, the size of the entire semiconductor laser light source device increases, and it is possible to efficiently combine these laser lights in a minute space. It will be difficult. Further, simply arranging the semiconductor laser light source devices in close contact with each other increases the amount of heat generation in a narrow range, which makes effective heat dissipation difficult. Further, as described above, in a blue light emitting laser element or the like, it is necessary to prevent reaction with an organic substance, and it is necessary to seal without using an organic substance. However, in the conventional technique, while effectively performing heat dissipation, There is a problem that it is difficult to manufacture a module that is compact and has a plurality of wavelengths of diodes arranged without degrading the quality.

An object of the present invention is to provide a semiconductor laser light source module, a laser light source device, a method for manufacturing a semiconductor laser light source module, and a method for manufacturing a laser light source device, in which diodes of a plurality of wavelengths can be compactly arranged while maintaining high quality. It is in.

In order to achieve the above object, the semiconductor laser light source module of the present invention,
A predetermined number of semiconductor laser diodes of 2 or more,
A housing in which the predetermined number of semiconductor laser diodes are arranged and sealed,
An electrode pair of a predetermined number that is provided across the inside and the outside of the housing, and flows a predetermined current to each of the predetermined number of semiconductor laser diodes according to a voltage applied from the outside,
A transparent member that is fixed directly or through a frame member so as to seal one opening of the housing, and transmits the emitted light of the semiconductor laser diode to output it from the inside of the housing,
Equipped with
The predetermined number of semiconductor laser diodes, each separated by an insulator, is fixed to a predetermined fixing range on the inner surface of the housing ,
Fixing portion forming at least the sticking range of the housing member constituting the front Kikatamitai is formed in a non-volatile inorganic material is a thermally conductive insulating member,
Wherein the interior of the housing, an inert gas or dry air is characterized in that it is filled.

Further, in order to achieve the above object, the laser light source device of the present invention,
The above semiconductor laser light source module,
A combining unit for combining a predetermined number of laser beams emitted from the semiconductor laser light source module,
It is characterized by having.
Further, another laser light source device of the present invention is
A predetermined number of semiconductor laser diodes of 2 or more,
A housing in which the predetermined number of semiconductor laser diodes are arranged and sealed,
An electrode pair of a predetermined number that is provided across the inside and the outside of the housing, and flows a predetermined current to each of the predetermined number of semiconductor laser diodes according to a voltage applied from the outside,
A transparent member that is fixed directly or through a frame member so as to seal one opening of the housing, and transmits the emitted light of the semiconductor laser diode to output it from the inside of the housing,
Equipped with
The predetermined number of semiconductor laser diodes, each separated by an insulator, is fixed to a predetermined fixing range on the inner surface of the housing,
Each part inside the housing is provided in the housing using a non-reactive material that does not deteriorate the semiconductor laser diode,
The fixing portion forming at least the fixing range of the casing member forming the casing is formed of a heat conductive metal member or a non-volatile inorganic material,
The inside of the housing is filled with an inert gas or dry air,
The casing is sealed with a non-reactive material that does not deteriorate the semiconductor laser diode or directly between the casing members.
A semiconductor laser light source module characterized in that
A combining unit for combining a predetermined number of laser beams emitted from the semiconductor laser light source module,
It is characterized by including.

Further, in order to achieve the above object, the method for manufacturing a semiconductor laser light source module of the present invention,
A step of forming an electrode pair across the inside and outside of the housing,
Bonding a predetermined number of two or more semiconductor laser diodes to a predetermined fixed range on the inner surface of the housing in a state of being separated from each other by an insulator;
Wire bonding the semiconductor laser diode and the electrode pair,
A step of fixing a transparent member that transmits the light emitted from the semiconductor laser diode to one opening of the housing directly or via a frame member, and sealing the one opening;
Filling the inside of the housing with an inert gas or dry air,
Sealing the opening of the housing,
Including
The fixing portion forming at least the sticking range of the casing members constituting the casing is characterized in that it is formed in a non-volatile inorganic material is a thermally conductive insulating member.

Further, in order to achieve the above object, the method for manufacturing a laser light source device of the present invention,
A method for manufacturing a laser light source device having a semiconductor laser light source module manufactured by the method for manufacturing a semiconductor laser light source module described above ,
A step of temporarily fixing to the semiconductor laser light source module with a photo-curing adhesive that cures a multiplexing part that multiplexes the emitted light of the predetermined number of the sealed semiconductor laser diodes with light of a predetermined wavelength,
A step of adjusting the position of the temporarily-combined multiplexing part that is emitted from the semiconductor laser diode,
Irradiating with light of the predetermined wavelength to fix the wavelength-adjusted multiplexing unit,
It is characterized by including.
Further, another method of manufacturing the laser light source device of the present invention is,
A step of forming an electrode pair across the inside and outside of the housing,
Bonding a predetermined number of two or more semiconductor laser diodes to a predetermined fixed range on the inner surface of the housing in a state of being separated from each other by an insulator;
Wire bonding the semiconductor laser diode and the electrode pair,
A step of fixing a transparent member for transmitting light emitted from the semiconductor laser diode to one opening of the housing directly or via a frame member, and sealing the one opening;
Filling the inside of the housing with an inert gas or dry air,
Sealing the opening of the housing,
Including
The fixing portion forming at least the fixing range of the casing member forming the casing is formed of a heat conductive metal member or a non-volatile inorganic material,
Each part inside the housing is provided in the housing using a non-reactive material that does not deteriorate the semiconductor laser diode,
The sealing of the opening and the joint surface of the housing is performed using a non-reactive material that does not deteriorate the semiconductor laser diode or directly between the housing members.
A method for manufacturing a laser light source device having a semiconductor laser light source module manufactured by the method for manufacturing a semiconductor laser light source module, comprising:
A step of temporarily fixing to the semiconductor laser light source module with a photo-curing adhesive that cures a multiplexing part that multiplexes the emitted light of the predetermined number of the sealed semiconductor laser diodes with light of a predetermined wavelength,
A step of adjusting the position of the temporarily-combined multiplexing part that is emitted from the semiconductor laser diode,
Irradiating with light of the predetermined wavelength to fix the wavelength-adjusted multiplexing unit,
It is characterized by including.

According to the present invention, in the semiconductor laser light source module and the laser light source device, it is possible to arrange the diodes of a plurality of wavelengths compactly while maintaining high quality.

It is a perspective view which shows the external appearance of the semiconductor laser light source module of 1st Embodiment. It is a figure which shows the other example of the shape of a window part. It is sectional drawing inside the semiconductor laser light source module of 1st Embodiment. It is the whole laser light source device perspective view containing a semiconductor laser light source module. It is a figure which shows the manufacturing process of a laser light source device. It is a perspective view which shows the external appearance of the laser light source device of 2nd Embodiment. It is sectional drawing of the laser light source device of 2nd Embodiment.

Embodiments of the present invention will be described below with reference to the drawings.
[First Embodiment]
First, a semiconductor laser light source module and a laser light source device according to the first embodiment of the present invention will be described.
The semiconductor laser light source module 100 of the first embodiment is a package that can be used alone as a laser light source device.

FIG. 1 is a perspective view showing the overall configuration of the semiconductor laser light source module 100 of the first embodiment.
The semiconductor laser light source module 100 is capable of simultaneously emitting laser light of three colors (a predetermined number of 2 or more), a red light source bare chip 101R and its submount 102R, a green light source bare chip 101G and its submount 102G, and a blue light source. Bare chip 101B and its submount 102B, electrodes 1031R, 1032R, 1031G, 1032G, 1031B, 1032B, bonding wires 1041R, 1042R, 1041G, 1042G, 1041B, 1042B, case 105 (case portion), bottom plate 106, A lid 107 and a window 108 (transmissive member) are provided.

Hereinafter, some or all of the red light source bare chip 101R, the green light source bare chip 101G, and the blue light source bare chip 101B are collectively referred to as an LD bare chip 101 (Laser Diode). Further, in the following, some or all of the submounts 102R, 102G, and 102B will be collectively referred to as a submount 102.

The red light source bare chip 101R is a bare chip of a surface mount laser diode (LD) that emits red laser light in a single transverse mode (STM), and is bonded to one surface of the submount 102R. It has a chip-on-submount (CoS) structure.
The green light source bare chip 101G is a surface mounting type LD bare chip that emits a green laser beam by STM, and has a CoS structure bonded to one surface of the submount 102G.
The blue light source bare chip 101B is a surface-mounted LD bare chip that emits blue laser light by STM, and has a CoS structure bonded to one surface of the submount 102B.

Each of the submounts 102 is formed of an insulating member having high thermal conductivity, for example, aluminum nitride (AlN). The surface of the submount 102 opposite to the surface bonded to the LD bare chip has the laser light emission direction aligned in the +x direction, and has a minute interval in a row in the y direction (for example, 1.2 mm interval or the like). It is bonded tightly) at a defined position (fixed area) on the bottom plate 106, such as: This makes it easy to achieve optical matching with the multiplexer when combining with the multiplexer as described later. For joining (fixing), a solder material (non-reactive material) that does not contain a volatile component that reacts with the LD bare chip 101 such as an epoxy resin and deteriorates, for example, a metal alloy that does not contain flux is used.

The case 105 forms a housing having a space for accommodating the LD bare chip 101 therein, and has three sides of a rectangular parallelepiped shape and a peripheral edge of the remaining one side. One of the upper and lower surfaces of the opened case 105 (downward, −z direction) is sealed by the bottom plate 106, and the other (upper, +z direction), that is, the surface facing the bottom plate 106 is sealed by the lid 107. It In addition, the peripheral edge of one side surface (+x direction) where only the peripheral edge is provided has the upper side and the lower side extended in the horizontal direction (+x direction), and the window 108 is attached to the opening between them so that the laser beam is emitted from the inside. Light is emitted.

The bottom plate 106 is formed to be larger than the bottom surface of the case 105 (the side in contact with the bottom plate 106), and on the bottom plate 106, that is, on the inner surface side of the housing, in addition to the above-described submount 102 and LD bare chip 101, an LD bare chip is provided. A plurality of electrodes 1031R, 1032R, 1031G, 1032G, 1031B, 1032B (hereinafter collectively referred to as electrodes 1031 and 1032, etc.) on the side (−x direction) opposite to the emitting direction of the laser light by 101 (the side of the window 108). (Described below) are arranged in a line in the ±y directions and provided inside and outside the case 105. Each of the electrodes 1031 and 1032 has a central portion that passes between the case 105 and the bottom plate 106 and extends in the +x direction across the inside and the outside of the case 105. The electrodes 1031 and 1032 are printed wirings formed into thin films by a method in which tungsten or Au (gold) paste is printed in a predetermined area (electrode formation area) to form a pattern. When a predetermined voltage is externally applied between an electrode pair consisting of an electrode 1031 which is an anode and an electrode 1032 which is a cathode corresponding to each LD bare chip 101, laser light is emitted from each LD bare chip 101 according to the flowing current. Is emitted.
In addition, the lower surface of the bottom plate 106 (the outer surface side of the housing) is plated with gold to allow heat to be radiated through the bottom plate 106 to the outside more efficiently.
The lid 107 is formed to have the same size as the upper surface of the case 105.

As the members (housing members) of the case 105, the bottom plate 106, and the lid portion 107, those having a high thermal conductivity and a non-volatile property are used. Here, highly insulating ceramics (nonvolatile inorganic material, thermally conductive insulating member, insulator) having low electric conductivity, for example, AlN or alumina (Al ₂ O ₃ ) is used, and is produced by a lamination sintering method. Those used are preferably used. The thin films forming the electrodes 1031 and 1032 described above are sandwiched between the layers of the bottom plate 106 and the case 105 and sintered, so that the peripheries of the electrodes 1031 and 1032 are tightly closed.

In this manner, when a highly insulating member (fixed portion) of the bottom plate 106 to which the submount 102 is fixed is used, the LD bare chip 101 is not CoS and the bottom plate is directly directly provided without the submount 102. It may be fixed to 106. By not using the submount 102, the interval of the light emitted from the LD bare chip 101 can be further narrowed.

The joining of the LD bare chip 101 and the submount 102, the joining of the submount 102 and the bottom plate 106, and the joining of the LD bare chip 101 and the electrodes 1031 and 1032 via the bonding wires 1041 and 1042 are all performed using a solder material. ing.
A package product in which the LD bare chip 101 and the submount 102 are bonded in advance may be used.

As a solder material used for joining the submount 102 (or bare chip 101) and the bottom plate 106, a solder material having a low melting point is preferably used, and here, a tin-silver-copper alloy (having no flux) having a melting point of 220° C. is used. It is used. When joining the submount 102 and the bottom plate 106, a gold thin film is first deposited on the bottom plate 106, and then the submount 102 is soldered to the gold thin film. Gold solder is used for joining the LD bare chip 101 and the electrodes 1031 and 1032.

Further, the bottom plate 106 and the case 105 are joined together without a gap by sintering the ceramic material of the case 105.
Further, gold is plated on the joint surface between the lid 107 and the case 105, and the gold-plated surfaces are brought into close contact with each other by a solder material (non-reactive material).

The window portion 108 is an optical component that is formed of a material that is transparent to the emitted laser light of the three colors of RGB and that outputs the laser light from the inside to the outside. A glass material is used for the window 108, for example. The shape of the window 108 is appropriately selected according to the configuration combined with the semiconductor laser light source module 100 and the application. For example, here, an array structure of coupling lenses is selected, which condenses the laser beams of the respective colors into parallel light beams arranged in a row.

FIG. 2 is a diagram showing another example of the shape of the window 108.
FIG. 2A shows a flat window portion 108a that allows laser light to pass therethrough as a divergent light source. Further, FIG. 2B shows a cylindrical lens structure (the axis of the cylinder is along the y direction) for collimating the laser beams in the fast axis direction.

The window 108 and the case 105 are joined to each other by a solder material (non-reactive material) which is gold-plated and does not contain a volatile component that deteriorates by reacting with the LD bare chip 101 such as epoxy resin. It Alternatively, the outer periphery of the window 108 is fixed by a mold member (frame member) made of multi-component low melting point glass and the mold member is directly fixed to the case 105, or the outer periphery of the mold member is further plated with gold. Then, the same solder material may be joined to the case 105. Various adhesives are also included in the material containing a component that reacts with the LD bare chip 101 to deteriorate. That is, such an adhesive is not used for bonding the respective parts in the semiconductor laser light source module 100.

As described above, the inside of the case 105 is completely hermetically sealed, and no air, dust, or the like enter or leave between the inside and the outside where the LD bare chip 101 is provided. In addition, since all the hermetically sealed parts are joined by the solder material, the volatile components of the adhesive do not enter inside. The case 105 is filled with an inert gas such as nitrogen gas or dry air.

FIG. 3 is a cross-sectional view showing the inside of the semiconductor laser light source module 100 of this embodiment.
FIG. 3A is a cross-sectional view cut in the xy plane, and FIG. 3B is a cross-sectional view in the xz plane cut in the cross section including the green light source bare chip 101G in FIG. 3A.

As described above, the electrodes 1031 and 1032 formed on the bottom plate 106 are provided in a row through the lower portion of the case 105 and inside and outside of the case 105.
Inside the case 105, the LD bare chip 101 has its anode side connected to the electrodes 1031R, 1031G, and 1031B by wire bonding, and its cathode side connected to the electrodes 1032R, 1032G, and 1032B by wire bonding. The bonding wires 1041R, 1041G, 1041B used for the connection on the anode side and the bonding wires 1042R, 1042G, 1042B used for the connection on the cathode side (hereinafter collectively referred to as bonding wires 1041, 1042, etc.) are all made of gold. Lines are used.

FIG. 4 is an overall perspective view of a laser light source device 1 incorporating a semiconductor laser light source module.
The laser light source device 1 includes a semiconductor laser light source module 100a, three coupling lenses 200R, 200G, and 200B, a multiplexer 300 (combining unit), and the like.

The semiconductor laser light source module 100a is the same as the semiconductor laser light source module 100 except that the bottom plate 106a extends in the x direction, and the same components are denoted by the same reference numerals and description thereof will be omitted.

The coupling lens 200R collects and guides the parallel light of the red laser emitted from the semiconductor laser light source module 100a through the window 108 to the entrance of the waveguide 320R of the multiplexer 300. The coupling lens 200G focuses and guides the parallel light of the green laser emitted from the semiconductor laser light source module 100a through the window 108 to the entrance of the waveguide 320G of the multiplexer 300. The coupling lens 200B focuses and guides the parallel light of the blue laser emitted from the semiconductor laser light source module 100a through the window 108 to the entrance of the waveguide 320B of the multiplexer 300.

Each of the coupling lenses 200R, 200G, and 200B (hereinafter, also collectively referred to as the coupling lens 200) is a bottom plate using an ultraviolet (UV) curable adhesive that is cured by light having a predetermined wavelength, for example, ultraviolet light (UV light). It is fixed to the extending portion of 106a.

The multiplexer 300 has three waveguides 320R, 320G, and 320B (hereinafter collectively referred to as the waveguide 320). An entrance for each of these waveguides 320 is provided on one side of the multiplexer 300, and an exit for emitting a combined laser beam on the side opposite to the one side. 330 is provided. Each of the waveguides 320 is a hollow tube (hollow light guide) using a thin film material that totally reflects light of an input wavelength on its side surface, for example, aluminum. Alternatively, various known optical fibers depending on the wavelength of the input laser light may be used, but in any case, an STM optical fiber or PLC suitable for the STM laser light emitted from the semiconductor laser light source module 100a (Planar Lightwave Circuit) STM light guide or the like is used.

The multiplexer 300 needs to be accurately aligned with the emitted light and fixed, and various resin adhesives such as the above-mentioned UV-curable adhesive to the bottom plate 106a are easy and precise in the order of μm. They are joined together in a way that allows proper positioning.
The coupling lens 200 may be included in the multiplexing section.

Next, a method for manufacturing the laser light source device 1 of this embodiment will be described.
FIG. 5 is a diagram sequentially showing the manufacturing process of the laser light source device 1 of the present embodiment.

First, the electrodes 1031 and 1032 are formed on the bottom plate 106a by a method using tungsten or Au paste as a printing pattern. Next, the bottom plate 106a and the case 105 are brought into close contact with each other by sandwiching the electrodes 1031 and 1032 (step S11).

Next, the case 105 and the window 108, the bottom plate 106a and the submount 102, and the joints of the case 105 and the lid 107 are gold-plated. Further, gold plating is performed on the lower surface of the bottom plate 106 (step S12).

Next, the LD bare chip 101 having a CoS structure and the submount 102 are bonded to the upper surface of the bottom plate 106 with epoxy-free solder (step S13). At this time, first, a metal (gold) thin film is formed on the upper surface of the bottom plate 106 by vapor deposition in a range that does not short-circuit with the electrodes 1031 and 1032, and a resist film or the like is used on the metal thin film to achieve high precision in the bonding range of the submount 102. To form a thin film pattern of solder material. Then, after mounting the respective submounts 102 in alignment with this thin film pattern, the solder material is heated to the melting point, and the submounts 102 and the LD bare chip 101 are collectively fixed and bonded at accurate positions. Here, when each submount 102 is mounted in order, the submount 102 is temporarily fixed by heating at a temperature at which only the metal having the lowest melting point in the alloy of the solder material is melted, The position shift may be prevented from occurring due to vibration or the like when mounting the mount 102.

Then, the electrodes 1031 and 1032 and the LD bare chip 101 are connected to each other with gold wires by the bonding wires 1041 and 1042 (step S14). Further, an electrode may be further formed between the electrodes 1031 and 1032 and the bonding wires 1041 and 1042 with a gold plating pattern.
Further, the window 108 is bonded to the case 105 with epoxy-free solder (step S15).
The process of step S15 may be performed before the processes of steps S13 and S14.

Then, the semiconductor laser light source module 100a is obtained by sealing the case 105 by soldering the lid 107 to the case 105 while purging nitrogen gas (inert gas) or dry air into the case 105 (step S16). To be

The coupling lens 200 and the multiplexer 300 are temporarily fixed to the bottom plate 6a of the semiconductor laser light source module 100a thus formed with a photo-curing adhesive, here a UV-curing adhesive (step S17). Appropriate voltage is applied between the electrodes 1031 and 1032 from the outside to emit the laser light of each color from the semiconductor laser light source module 100a, and the appropriately combined laser light is output from the emission port 330 of the multiplexer 300. As described above, the positions of the temporarily fixed coupling lens 200 and the multiplexer 300 are adjusted (active alignment), and UV light is radiated when the adjustment is completed to an appropriate relative positional relationship, and the UV curable adhesive is then applied. The laser light source device 1 is obtained by quickly curing the agent (step S18).

As described above, the semiconductor laser light source module 100 according to the present embodiment includes three semiconductor laser diodes (LD bare chip 101 and subframe 102) that respectively output three wavelengths, and these semiconductor laser diodes are arranged inside and sealed. The case (the case 105, the bottom plate 106, and the lid 107) and the inside and outside of the case are provided so that a predetermined current flows through each of the three semiconductor laser diodes according to the voltage applied from the outside. The three pairs of electrodes 1031 and 1032 and the pair of electrodes 1031 and 1032 are fixed to each other directly or via a molding member so as to seal one opening of the housing, and the emitted light of the semiconductor laser diode is transmitted to be output from the inside of the housing. The three semiconductor laser diodes are provided with an insulating material, here a bottom plate 106, and a solder material such as a silver-copper alloy and a gold material are attached to a predetermined fixing range on the inner surface of the housing. It is fixed using plating, and each part inside the housing is provided inside the housing using a solder material or metal plating that does not deteriorate the semiconductor laser diode. At least the bottom plate 106 is formed of a thermally conductive non-volatile inorganic material such as aluminum nitride (AlN) or alumina (Al ₂ O ₃ ), and the inside of the housing is filled with an inert gas or dry air. Are directly sealed by using a solder material or a plating material that does not deteriorate the semiconductor laser diode or by welding the housing members to each other.
As a result, a plurality of semiconductor laser diodes each emitting a laser beam of a plurality of wavelengths are mounted at high density, the heat from the plurality of semiconductor laser diodes is effectively radiated, and all the semiconductor laser diodes are sealed. , Do not contact with components such as epoxy resin that cause problems with semiconductor laser diodes.
Therefore, it is possible to obtain a highly reliable and long-life module capable of preventing deterioration while maintaining high quality of a compact semiconductor laser light source module capable of simultaneously outputting laser beams of a plurality of wavelengths.

Further, it is possible to easily guide the simultaneously outputted laser lights of a plurality of wavelengths to the multiplexer 300 or the like and utilize them in various devices using the laser lights of a plurality of wavelengths.

Further, among the members constituting the casing, at least the bottom plate 106 to which the submount 102 is fixed is formed of AlN or alumina (Al ₂ O ₃ ) which is a heat conductive insulating member. Therefore, it is possible to efficiently exhaust heat from the entire bottom surface of the semiconductor laser light source module 100 with respect to heat generation of the plurality of LD bare chips 101 while ensuring insulation between the LD bare chips 101 (10 ¹⁴ Ωm or more).

Further, the electrode pair formed of the set of electrodes 1031 and 1032 is formed into a thin film in a predetermined electrode formation range extending from one inner surface of the housing to the outside, and a portion of the housing that is in contact with the electrode pair is thermally conductive and insulated. It is formed of a member. Therefore, it is possible to easily obtain the semiconductor laser light source module 100 while ensuring the insulating property of the electrodes and minimizing the processing of the heat conductive insulating member which is slightly difficult to process. Further, the heat of the electrodes heated from the LD bare chip 101 through the bonding wires 1041 and 1042 can be efficiently radiated to the housing.

The housing has a shape in which the bottom plate 106 extends and the inner surface extends to the outside of the housing, and the electrode pair is formed between the inner surface of the bottom plate 106 and the outside. Therefore, the electrodes can be easily formed on the flat surface of the bottom plate 106, and the cost and the labor can be reduced.

Further, the bottom plate 106 and the case 105 that sandwich the electrode formation range are closely formed by sintering, and the electrode pair has a pattern formed by printing tungsten or Au paste having a melting point higher than the temperature related to sintering. It is formed by a method such as. This allows the bottom plate 106 and the case 105 to be easily brought into close contact with each other after forming a thin film of a tungsten electrode or an Au electrode on the bottom plate 106, and does not cause a problem in the electrodes 1031 and 1032 due to heat, and has a thermally conductive insulation. It is possible to further reduce the time and labor for processing the member such as AlN or alumina (Al ₂ O ₃ ). Therefore, cost and labor can be reduced, mass production can be easily performed, and yield can be improved.

In addition, the surfaces of the housing and the window 108 that are fixed to each other directly or through the molding member are plated with metal, and the plated surfaces do not contain a volatile component such as epoxy resin that deteriorates the LD bare chip 101. Since the components are bonded together, it is possible to reliably seal the bonding surface between the housing and the window portion 108 without mixing a component that causes a problem in the LD bare chip 101 inside the housing.

Further, the housing has a case 105 having an open upper surface facing the bottom plate 106 to which the submount 102 (LD bare chip 101) is fixed, and a lid 107 for sealing the upper surface. The portion 107 is fixed by using a solder member and gold plating that do not contain a volatile component that deteriorates the LD bare chip 101. Therefore, the LD bare chip 101 can be easily mounted inside the housing, and then the lid 107 can be reliably sealed without mixing a component that causes a problem in the LD bare chip 101 into the housing. I can.

Further, the window portion 108 is selected so as to have a lens structure that collimates the emitted light of the LD bare chip 101 at least in the fast axis direction, or has a lens structure that makes the emitted light into parallel beam lights arranged in a line. It is selected so that it is properly joined. In this way, by providing the appropriate window portion 108 according to the application, it is possible to reduce the trouble of adjustment and the number of components when combining a plurality of outgoing lights. Therefore, it is possible to obtain the semiconductor laser light source module 100 that is easy to output to the multiplexer (that is, easy to optically couple) and easy to use, and it is possible to easily expand the range of use.

Further, the laser light source device 1 according to the present embodiment includes a semiconductor laser light source module 100a, a coupling lens 200 for multiplexing a predetermined number (three colors) of laser light emitted from the semiconductor laser light source module 100a, and a multiplexer 303. With.
Therefore, it is possible to obtain the laser light source device 1 which combines the semiconductor laser light source module 100a which is sealed and integrally formed with a small number of parts, and which can compactly and precisely combine and output the laser beams of a plurality of wavelengths.

Further, the coupling lens 200 and the multiplexer 300 have a relative positional relationship in which the light emitted from the semiconductor laser light source module 100a is incident and combined by a UV curing adhesive that is cured by ultraviolet light (UV light). It is fixed. That is, since the coupling lens 200 and the multiplexer 300 can be quickly cured by irradiation with UV light when they are precisely aligned, precise alignment can be easily performed. Moreover, since the volatile component contained in the UV-curable adhesive does not hurt the LD bare chip 101 inside the already-sealed housing, the mounting process for precise adjustment becomes very simple.

Further, in the method of manufacturing the semiconductor laser light source module 100 of the present embodiment, the step of forming the pair of electrodes 1031 and 1032 across the inside and the outside of the housing (the case 105, the bottom plate 106 and the lid 107) (step S11). ), a predetermined number (three) of semiconductor laser diodes (LD bare chips 101, submounts 102) are insulated with respect to a predetermined fixing range on the inner surface of the housing, and here, LDs are separated from each other by a bottom plate 106. A step of joining the bare chip 101 using a solder material such as a silver-copper alloy that does not deteriorate and gold plating (steps S12 and S13), and a step of wire-bonding the semiconductor laser diode and the electrode pair with gold by the bonding wires 1041 and 1042. (Step S14), a window 108 for transmitting light emitted from the semiconductor laser diode is directly provided in one opening of the housing, or a solder material that does not deteriorate the semiconductor laser diode and is plated with gold if necessary through a molding member. The step of fixing by using the step of sealing the one opening (step S15), the step of filling the inside of the case with an inert gas (step S16), the opening of the case such as the upper surface of the case 105 is covered. The bottom plate 106 including the step of sealing with the portion 107 and the like (step S16 and the like) and forming at least the fixing range of the semiconductor diode in the casing member forming the casing is a nitride of a thermally conductive nonvolatile inorganic material. It is made of aluminum or alumina (Al ₂ O ₃ ), and the opening and joint surface of the housing are sealed with a solder material or a plating material that does not deteriorate the semiconductor laser diode, or directly welded between housing members. And so on.
By such a procedure, a plurality of semiconductor laser diodes each emitting a laser beam of a plurality of wavelengths are mounted at a high density, the heat from the plurality of semiconductor laser diodes is effectively radiated, and all the semiconductor laser diodes are sealed. It is possible to obtain a semiconductor laser light source device that does not come into contact with a component such as an epoxy resin that causes a problem in the semiconductor laser diode.
Therefore, it is possible to obtain a highly reliable and long-life module that prevents deterioration while maintaining high quality of a compact semiconductor laser light source module capable of simultaneously outputting laser beams of a plurality of wavelengths.

Further, since each process can be easily and surely advanced without requiring a special process, it is possible to improve manageability and productivity, and realize high reliability and cost reduction.

In the steps S12 and S13, the semiconductor laser diode is formed by forming a thin film pattern of a solder material in the fixing range of the semiconductor laser diode (submount 102, that is, the LD bare chip 101) to the bottom plate 106. The method includes a step of arranging the thin film pattern so as to match the thin film pattern, a step of heating the thin film pattern to once melt it, and precisely fixing the semiconductor laser diode in the fixing range.
Since a plurality of semiconductor laser diodes (submount 102 and LD bare chip 101) can be collectively and precisely fixed to the correct position by such a process, a high-quality, efficient and compact semiconductor laser light source module can be obtained. ..
Further, in particular, since the laser light can be output in an accurate emission direction, it is easy to achieve optical alignment with the multiplexer 300 after output, that is, position adjustment becomes easier.

In addition, in the method for manufacturing the laser light source device 1 according to the present embodiment, a UV curing type in which the multiplexer 300 that multiplexes the emitted light of the three semiconductor laser diodes sealed in the semiconductor laser light source module 100a is cured with UV light. A step of temporarily fixing the semiconductor laser light source module 100a to the semiconductor laser light source module 100a with an adhesive (step S17), a step of emitting laser light from the semiconductor laser diode to adjust the position of the temporarily combined multiplexer 300 (step S18), f Irradiating with light to fix the multiplexer 300 whose position has been adjusted.
In this way, the relative position adjustment between the semiconductor laser light source module 100, which is sealed and the output direction is determined, and the multiplexer 300 is performed in the assembling process relating to the multiplexing of the outputted laser beams of a plurality of wavelengths. By dropping it, position adjustment can be easily performed only by aligning the multiplexer 300, accuracy can be improved and labor can be reduced at the same time, and the semiconductor laser light source module 100 after sealing can be adversely affected to the LD bare chip 101. It is possible to perform the bonding using a UV curable adhesive without worrying about the problem. Therefore, reasonably accurate assembly can be performed in two stages, namely, temporary fixing and final fixing after alignment.

[Second Embodiment]
Next, the semiconductor laser light source module and the laser light source device of the second embodiment will be described.
FIG. 6 is a perspective view showing the overall configuration of the laser light source device 1b of this embodiment.

The laser light source device 1b includes a semiconductor laser light source module 100b and long pass filters 210R, 210G, and 210B (long wavelength pass filter; hereinafter also collectively referred to as long pass filter 210).

The semiconductor laser light source module 100b of the present embodiment includes columnar electrodes 1131R, 1131G, 1113B, 1132R, 1132G, 1132B instead of the electrodes 1031, 1032, and a case 115 instead of the case 105, the bottom plate 106 and the lid 107. The bottom plate 116 and the lid 117 are used. Structures other than these are the same as those of the semiconductor laser light source module 100 of the first embodiment described above, the same reference numerals are given, and description thereof is omitted.

In the semiconductor laser light source module 100b of this embodiment, the case 115, the bottom plate 116, and the lid 117 are made of a metal member that is an electrically conductive member and a heat conductive member. Various materials can be selected as the metal member, but based on high thermal conductivity, easiness of processing, material cost, etc., for example, oxygen-free copper plate, aluminum plate or copper tungsten (Cu-W) is used. Such alloys are more preferably selected. In this case, the metal thin film need not be vapor-deposited on the surface of the bottom plate 116 to be fixed to the submount 102, and a thin solder film may be directly formed in the fixing range by a mask pattern or the like.

These metal members are directly fixed by seam welding or laser welding, or joined by a solder material containing no volatile component such as epoxy resin which deteriorates the LD bare chip 101. 1131G, 1131B, 1132R, 1132G, 1132B (hereinafter collectively referred to as columnar electrodes 1131 and 1132) are provided to penetrate through the bottom plate 116, respectively.

The long-pass filter 210R allows light having a wavelength longer than that of the red laser light to pass therethrough and reflects light having a wavelength equal to or shorter than the wavelength. The long-pass filter 210R is arranged on the base 410 tilted by 45 degrees with respect to the parallel light of the red laser emitted from the semiconductor laser light source module 100a, and reflects the red laser light to change the direction by 90 degrees.

The long-pass filter 210G allows light having a wavelength longer than that of the green laser light to pass therethrough and reflects light having a wavelength equal to or shorter than the wavelength. The long pass filter 210G is inclined by 45 degrees with respect to the parallel light of the green laser emitted by the semiconductor laser light source module 100a, and the reflection position of the green laser light and the passage position of the red laser light reflected by the long pass filter 210R. Are arranged so that and match. As a result, the green laser light reflected by the long-pass filter 210G and the red laser light passing through the long-pass filter 210G overlap on the same line.

The long-pass filter 210B allows light having a wavelength longer than that of the blue laser light to pass therethrough and reflects light having a wavelength equal to or shorter than the wavelength. The long-pass filter 210B is inclined 45 degrees with respect to the parallel light of the blue laser emitted by the semiconductor laser light source module 100a, and the reflection position of the blue laser light and the red laser light and the long-pass filter 210G reflected by the long-pass filter 210R. Are arranged so that the passing position of the green laser light reflected by is matched. As a result, the blue laser light reflected by the long-pass filter 210B and the green laser light and the red laser light overlap on the same line, and the parallel beam light on the position is output from the laser light source device 1a.

Any of these long-pass filters 210 can be bonded onto the bottom plate 116 using an adhesive. As the adhesive, for example, a UV curable adhesive is used, and the adhesive is accurately and firmly fixed by irradiating with UV light after the precise adjustment of the positional relationship with the semiconductor laser light source module 100b is completed.

FIG. 7 shows a cross-sectional view of the laser light source device 1b of this embodiment.
7A is a cross-sectional view cut in the xy plane, and FIG. 7B is a cross-sectional view in the xz plane cut in the cross section including the blue light source bare chip 101B in FIG. 7A.

The bottom plate 116 is provided with six through holes separately, and the columnar electrodes 1131 and 1132 pass through the through holes, respectively. These through-holes are formed thicker than the columnar electrodes 1131 and 1132, respectively, and the columnar electrodes 1131 and 1132 are separated from each other so as not to come into contact with the bottom plate 116 that is a conductive member and to prevent a short circuit. 412G, 411B, 412B (hereinafter collectively referred to as insulating portions 411, 412) are filled.

A glass material is used for the insulating parts 411 and 412, and for example, they are arranged by melting and sealing as sealing glass that fills the gap between the columnar electrodes 1131 and 1132 and the through holes.

As described above, in the semiconductor laser light source module 100b and the laser light source device 1b of the present embodiment, the CoS formed by the LD bare chip 101 on the submount 102 made of an insulating member is used as the semiconductor laser diode, and At least the bottom plate 116 of the portion to which the submount 102 is fixed is formed of an electrically conductive member, and the submount 102 is an epoxy resin that deteriorates the LD bare chip 101 with respect to the upper surface of the bottom plate 116 (the inner surface side of the housing). It is fixed using a solder material that does not contain such components.
Even in this case, heat can be efficiently discharged from the plurality of LD bare chips 101 arranged in parallel at high density to the outside of the housing, and the LD bare chips 101 are appropriately protected by being collectively sealed. As a result, it is possible to output the light of appropriate wavelengths from the compact module so that the light can be easily combined while achieving a long life.

Further, the electrode pair composed of the cylindrical electrodes 1131 and 1132 corresponding to each LD bare chip 101 is arranged across the inside and the outside of the casing through a through hole provided through the bottom plate 116, and this penetration The hole is sealed with a non-volatile inorganic material such as a glass material as a sealing glass, and the glass material insulates the bottom plate 116 and the electrode pair. Therefore, it is possible to operate each LD bare chip 101 in a compact module while easily and appropriately maintaining the insulating property while allowing the electrodes to be provided in an appropriate direction by taking advantage of the workability of the metal member.

The present invention is not limited to the above embodiment, and various modifications can be made.
For example, in the above-described embodiment, an example in which the housing is formed only of AlN or alumina (Al ₂ O ₃ ) and an example in which the housing is formed of only a metal member have been described, but they may be combined. .. Further, it is not necessary that all of the casing members have high thermal conductivity, and at least a portion forming a range where the LD bare chip 101 and the submount 102 are fixed, here, a part or all of the bottom plates 106 and 116 ( If these are used in the fixing portion) and heat is surely dissipated, other portions, for example, the lid portions 107 and 117 may be made of a non-volatile inorganic material or the like even if they are made of different materials. As long as the deteriorating component does not volatilize and the hermetically sealed state can be appropriately maintained, it may have low heat dissipation.

Further, in the above embodiment, an example in which the LD bare chips 101 of three colors RGB are arranged is shown, but other colors may be included, or only two colors may be included. Further, the included color (wavelength) may include infrared (IR).

Further, in the above embodiment, the sealing process is performed while purging the inert gas or the dry air, but the sealing process may be performed in the atmosphere gas of the inert gas or the dry air.

Further, in the above embodiment, the surface on which the electrode pair is provided does not necessarily have to be the same as the surface on which the LD bare chip 101 or the submount 102 is fixed. Further, the surface on which the lid portions 107 and 117 are provided may not face the surface on which the LD bare chip 101 and the submount 102 are provided. However, by opening the surface facing the surface on which the LD bare chip 101 and the submount 102 are provided, each process such as mask pattern formation, solder material thin film formation, and heating can be performed more easily.

Further, the examples of the non-reactive material that does not deteriorate the LD bare chip 101 used when joining the respective parts shown in the above-described embodiment are not limited to the above-described solder material made of a metal alloy containing no flux. Further, these may partially or entirely overlap with each other, or may be different at all positions.

Further, in the above embodiment, the coupling lens 200, the multiplexer 300 and the like are fixed to the semiconductor laser light source module 100a using an ultraviolet (UV) curable adhesive, but other types may be used. .. In any case, since the inside of the housing of the semiconductor laser light source module 100a is hermetically sealed, it is possible to adjust and fix the volatile components that cause a problem in the LD bare chip 101 without limitation.
In addition, the specific details of the configuration, structure, and manufacturing process shown in the above-described embodiment can be appropriately changed without departing from the spirit of the present invention.

1, 1b Laser light source device 100, 100a, 100b Semiconductor laser light source module 101B Blue light source bare chip 101G Green light source bare chip 101R Red light source bare chip 102R, 102G, 102B Submount 105, 115 Case 106, 116 Bottom plate 107, 117 Lid part 108 Window part 411R, 411G, 411B, 412R, 412G, 412B Insulation parts 200R, 200G, 200B Coupling lenses 210R, 210G, 210B Long pass filter 300 Combiners 320R, 320G, 320B Waveguide 330 Outlet ports 1031R, 1031G, 1031B, 1032R, 1032G 1032B electrodes 1041R, 1041G, 1041B, 1042R, 1042G, 1042B bonding wires 1131R, 1131G, 1113B, 1132R, 1132G, 1132B columnar electrodes

Claims (19)

A predetermined number of semiconductor laser diodes of 2 or more,
A housing in which the predetermined number of semiconductor laser diodes are arranged and sealed,
An electrode pair of a predetermined number that is provided across the inside and the outside of the housing, and flows a predetermined current to each of the predetermined number of semiconductor laser diodes according to a voltage applied from the outside,
A transparent member that is fixed directly or through a frame member so as to seal one opening of the housing, and transmits the emitted light of the semiconductor laser diode to output it from the inside of the housing,
Equipped with
The predetermined number of semiconductor laser diodes, each separated by an insulator, is fixed to a predetermined fixing range on the inner surface of the housing ,
Fixing portion forming at least the sticking range of the housing member constituting the front Kikatamitai is formed in a non-volatile inorganic material is a thermally conductive insulating member,
The inside of the casing, the semiconductor laser light source module inert gas or dry air is characterized in that it is filled. Each part inside the housing is provided in the housing using a non-reactive material that does not deteriorate the semiconductor laser diode,
The casing is sealed with a non-reactive material that does not deteriorate the semiconductor laser diode or directly between the casing members.
A semiconductor laser light source module according to claim 1, wherein the this. The electrode pair is formed as a thin film in a predetermined electrode formation range extending from one inner surface of the housing to the outside, and a portion of the housing that is in contact with the electrode pair is formed by the heat conductive insulating member. The semiconductor laser light source module according to claim 1 or 2, wherein The housing has a shape in which one inner surface extends to the outside of the housing,
The semiconductor laser light source module according to claim 3, wherein the electrode pair is formed in the electrode formation range extending over the one inner surface and the extended outside. The casing members sandwiching the electrode formation range are closely formed by sintering, and the electrode pair is formed of a member having a melting point higher than a temperature related to the sintering. The semiconductor laser light source module according to claim 4. The fixing surfaces of the housing and the transparent member directly or through the frame member are each metal-plated, and the plated surfaces are joined by a non-reactive material that does not deteriorate the semiconductor laser diode. a semiconductor laser light source module according to any one of claim 1 to 5, wherein. The casing has a case portion whose upper surface facing the fixing range is open, and a lid portion sealing the upper surface, and the case portion and the lid portion do not deteriorate the semiconductor laser diode. using reaction materials, or the semiconductor laser light source module according to any one of claim 1 to 6, characterized in that it is directly fixed. The transmission member, the semiconductor laser light source module according to any one of claim 1 to 7, characterized in that a lens structure for collimating each of at least the fast axis direction emitted light of the semiconductor laser diode. The transmission member, the semiconductor laser light source module according to any one of claim 1 to 7, characterized in that a lens structure for said semiconductor laser diode parallel light beam in a row light emitted. A semiconductor laser light source module according to any one of claim 1 to 9
A combining unit for combining a predetermined number of laser beams emitted from the semiconductor laser light source module,
A laser light source device comprising: A predetermined number of semiconductor laser diodes of 2 or more,
A housing in which the predetermined number of semiconductor laser diodes are arranged and sealed,
An electrode pair of a predetermined number that is provided across the inside and the outside of the housing, and flows a predetermined current to each of the predetermined number of semiconductor laser diodes according to a voltage applied from the outside,
A transparent member that is fixed directly or through a frame member so as to seal one opening of the housing, and transmits the emitted light of the semiconductor laser diode to output it from the inside of the housing,
Equipped with
The predetermined number of semiconductor laser diodes, each separated by an insulator, is fixed to a predetermined fixing range on the inner surface of the housing,
Each part inside the housing is provided in the housing using a non-reactive material that does not deteriorate the semiconductor laser diode,
The fixing portion forming at least the fixing range of the casing member forming the casing is formed of a heat conductive metal member or a non-volatile inorganic material,
The inside of the housing is filled with an inert gas or dry air,
The casing is sealed with a non-reactive material that does not deteriorate the semiconductor laser diode or directly between the casing members.
A semiconductor laser light source module characterized in that
A combining unit for combining a predetermined number of laser beams emitted from the semiconductor laser light source module,
A laser light source device comprising: The semiconductor laser diode is CoS in which a bare chip is formed on a submount made of an insulating member,
At least the fixing portion of the housing member is formed of an electrically conductive member,
The submount said semiconductor laser diode les Za light source apparatus according to claim 11, characterized by being fixed using a non-reactive material that does not degrade the said anchoring range. The electrode pair is arranged across the inside and the outside of the casing via a through hole provided through the casing member,
The through hole is sealed by nonvolatile inorganic materials, also the casing and the electrode pair and Les Za light source apparatus according to claim 12, characterized in that it is insulated. The multiplexing section is fixed by a relative position relationship in which light emitted from the semiconductor laser light source module is incident and multiplexed by a photo-curing adhesive that is cured with light having a predetermined wavelength. The laser light source device according to any one of claims 10 to 13 . A step of forming an electrode pair across the inside and outside of the housing,
Bonding a predetermined number of two or more semiconductor laser diodes to a predetermined fixed range on the inner surface of the housing in a state of being separated from each other by an insulator;
Wire bonding the semiconductor laser diode and the electrode pair,
A step of fixing a transparent member that transmits the light emitted from the semiconductor laser diode to one opening of the housing directly or via a frame member, and sealing the one opening;
Filling the inside of the housing with an inert gas or dry air,
Sealing the opening of the housing,
Including
At least the fixing portion forming the fixing range of the casing member forming the casing is formed of a non-volatile inorganic material that is a heat conductive insulating member .
The method of manufacturing a semiconductor laser light source module, wherein the this. Each part inside the housing is provided in the housing using a non-reactive material that does not deteriorate the semiconductor laser diode,
The sealing of the opening and the joint surface of the housing is performed using a non-reactive material that does not deteriorate the semiconductor laser diode or directly between the housing members.
16. The method for manufacturing a semiconductor laser light source module according to claim 15, wherein. The step of joining the predetermined number of semiconductor laser diodes,
Forming a thin film pattern of the non-reactive material that does not degrade the semiconductor laser diode to said fixed range,
Arranging the semiconductor laser diode in alignment with the thin film pattern,
Heating the thin film pattern to fix the semiconductor laser diode in the fixing range,
17. The method for manufacturing a semiconductor laser light source module according to claim 15 , comprising: A method of manufacturing a laser light source device having a semiconductor laser light source module manufactured by the method of manufacturing a semiconductor laser light source module according to claim 15 .
A step of temporarily fixing to the semiconductor laser light source module with a photo-curing adhesive that cures a multiplexing portion that multiplexes the emitted light of the predetermined number of the sealed semiconductor laser diodes with light of a predetermined wavelength,
A step of adjusting the position of the temporarily-combined multiplexing part that is emitted from the semiconductor laser diode,
Irradiating with light of the predetermined wavelength to fix the wavelength-adjusted multiplexing unit,
A method of manufacturing a laser light source device, comprising: A step of forming an electrode pair across the inside and outside of the housing,
Bonding a predetermined number of two or more semiconductor laser diodes to a predetermined fixed range on the inner surface of the housing in a state of being separated from each other by an insulator;
Wire bonding the semiconductor laser diode and the electrode pair,
A step of fixing a transparent member that transmits the light emitted from the semiconductor laser diode to one opening of the housing directly or via a frame member, and sealing the one opening;
Filling the inside of the housing with an inert gas or dry air,
Sealing the opening of the housing,
Including
The fixing portion forming at least the fixing range of the casing member forming the casing is formed of a heat conductive metal member or a non-volatile inorganic material,
Each part inside the housing is provided in the housing using a non-reactive material that does not deteriorate the semiconductor laser diode,
The sealing of the opening and the joint surface of the housing is performed using a non-reactive material that does not deteriorate the semiconductor laser diode or directly between the housing members.
A method for manufacturing a laser light source device having a semiconductor laser light source module manufactured by the method for manufacturing a semiconductor laser light source module, comprising:
A step of temporarily fixing to the semiconductor laser light source module with a photo-curing adhesive that cures a multiplexing portion that multiplexes the emitted light of the predetermined number of the sealed semiconductor laser diodes with light of a predetermined wavelength,
A step of adjusting the position of the temporarily-combined multiplexing part that is emitted from the semiconductor laser diode,
Irradiating with light of the predetermined wavelength to fix the wavelength-adjusted multiplexing unit,
A method of manufacturing a laser light source device, comprising:

Images