JP4728625B2 - Optical semiconductor device and optical module using the same - Google Patents

Description

  The present invention relates to an optical semiconductor device mainly applied to optical fiber communication and an optical module using the same.

  With the spread of optical fiber communication in recent years, a technique for integrating a large number of optical elements at a high density is required. At the same time, there is a need for an optical semiconductor device and an optical module with high reliability and few failures.

  For example, Patent Literatures 1 and 2 are related to conventional optical semiconductor devices and optical modules using the same.

  First, an optical semiconductor device and an optical module in a conventional example described in Patent Document 1 will be described below with reference to FIG. FIG. 1 shows the structure of an optical module 11 including an optical semiconductor device. The optical semiconductor device referred to here is an optical semiconductor element 13 or an optical semiconductor element array 15 having a light receiving / emitting surface 17. The optical module 11 includes the optical semiconductor device 13 and / or 15 and the optical waveguide 19. It is comprised with the board | substrate 21 which has, and the metal wiring 23. FIG.

  The optical semiconductor element 13 is a single optical element such as a semiconductor laser or a photodiode, and is generally a semiconductor chip having a side of about 0.5 mm × 0.5 mm × 0.2 mm square. In order to perform fiber communication with near-infrared light in the optical semiconductor element 13, a semiconductor such as indium phosphide or gallium arsenide is generally used as its constituent material. On the other hand, the optical semiconductor element array 15 is obtained by integrating a plurality of optical semiconductor elements 13 on the same semiconductor chip, and the size thereof is generally about 0.5 mm × 2.0 mm × 0.2 mm in a 4-channel array, for example.

  The optical semiconductor devices 13 and / or 15 are usually mounted with the light emitting / receiving surface 17 facing the substrate 21 and optically connected to the optical waveguide 19 on the substrate 21. At the same time, the optical semiconductor device can perform light transmission / reception operations as the optical module 11 by being electrically connected to the metal wiring 23 formed on the substrate 21 via solder, gold bumps, or the like. The optical semiconductor device used in this configuration is very small because the size is a chip size. In particular, an optical semiconductor device using the optical semiconductor element array 15 is highly integrated on the optical waveguide 19 substrate 21.

  Next, an optical semiconductor device in the conventional example described in Patent Document 2 will be described below with reference to FIG. FIG. 2 is a cross-sectional view showing the structure of the optical semiconductor device. This optical semiconductor device includes an optical semiconductor element array 15 having a light emitting / receiving surface 17, a metal wiring 23, a housing 25, a lid 27, a window 29, a bonding agent 31, a lead pin 33, and a bonding wire 35. The casing 25 and the lid 27 are made of metal such as aluminum or copper tungsten. The window 29 is made of a material that can transmit near infrared light. Quartz glass or sapphire is mainly used as the window 29 material. The window 29 is bonded to the inside of the lid 27 via a bonding agent 31, and the lid 27 and the housing 25 are bonded via the bonding agent 31, thereby sealing the optical semiconductor element array 15. Each optical semiconductor element of the optical semiconductor element array 15 is mounted on a metal wiring 23 formed on the bottom of the housing 25, and the light emitting / receiving surface 17 faces the window 29. An electrode (not shown) of the optical semiconductor element and the lead pin 33 are electrically connected by a bonding wire 35. The lead pins 33 penetrate from the inside of the housing 25 to the outside, and some or all of the plurality of lead pins 33 are insulated from the housing 25. As described above, the optical semiconductor element array 15 is obtained by integrating a plurality of optical semiconductor elements on the same semiconductor chip. The size of the optical semiconductor element array 15 is, for example, about 0.5 mm × 2.0 mm × 0.2 mm in a 4-channel array. The diameters of the lead pins 33 are about 0.8 mm each, and are arranged at intervals of about 2.5 mm. The size of the housing 25 is about 10 mm × 15 mm × 5 mm.

  Here, the housing 25, the lid 27, and the window 29 have high airtightness, and the lid 27 and the window 29 and the bonding agent 31 that joins the lid 27 and the housing 25 also have high airtightness. As a result, the optical semiconductor element array 15 can be hermetically sealed with high hermeticity and can be protected from the external environment. Thereby, this optical semiconductor device can obtain high reliability.

  Next, FIG. 3 shows the structure of a conventional optical semiconductor device in which only one optical semiconductor element 13 is hermetically sealed. This structure was not listed as a reference, but is widely known as TO-CAN. Except for the lid 27 having a cylindrical shape, the configuration is substantially the same as that of the above-mentioned Patent Document 2. The diameter of the housing 25 is about 3 mm even if it is small. Here, the casing 25, the lid 27, and the window 29 have high airtightness, and the bonding agent 31 that joins the lid 27 and the window 29 and the lid 27 and the casing 25 also has high airtightness. As a result, the optical semiconductor element 13 is hermetically sealed with high airtightness, and can be protected from the external environment. Thereby, this optical semiconductor device can obtain high reliability.

  Next, the structure of the conventional optical module 11 incorporating the optical semiconductor device shown in FIG. 2 or FIG. 3 will be described with reference to FIG. The optical module includes an optical semiconductor device, a substrate 21, a second substrate 37, and an adhesive 39 that bonds the optical semiconductor device and the substrate 21. Here, for the sake of simplicity, the optical semiconductor device having the configuration shown in FIG. 3 was used. That is, the optical semiconductor device of FIG. 4 includes the optical semiconductor element 13 having the light emitting / receiving surface 17, the metal wiring 23, the housing 25, the window 29, the bonding agent 31, the lead pin 33, and the bonding wire 35. The substrate 21 is made of a material that transmits light, such as quartz glass. The optical semiconductor device is bonded to the substrate 21 with its window 29 facing downward in the drawing. The second substrate 37 is connected to the lead pins 33.

  The operation of the optical module in FIG. 4 will be described below. Light input to or output from the optical semiconductor element 13 is optically connected to an optical element (not shown) such as an optical fiber through the substrate 21. The optical semiconductor element 13 can perform electrical input / output via the lead pins 33 and the second substrate 37.

  As an application of this optical semiconductor device such as TO-CAN, a configuration in which a lens is attached to the window 29 has been proposed. FIG. 5 shows a structure of a conventional optical module in which an optical semiconductor device having the lens 41 is incorporated. 5 is different from FIG. 4 in that a lens 41 is integrally added to the window 29 of the optical semiconductor device. By using the lens 41, it is possible to satisfactorily optically couple between objects having different spot sizes, such as connection between an LD (laser diode) 13 and an optical fiber (not shown).

Japanese Patent Laid-Open No. 10-133046 Japanese Patent No. 3121424

  The conventional optical semiconductor devices 13 and 15 and the optical module shown in FIG. 1 have the advantage that the size of the optical semiconductor devices 13 and 15 is small, but the optical semiconductor devices 13 and 15 are not hermetically sealed. Therefore, there is a problem that the optical semiconductor element is easily deteriorated and its reliability cannot be secured. As a means for hermetically sealing the optical semiconductor devices 13 and 15, a method of hermetically sealing the entire optical module of FIG. 1 can be considered. However, if a means for hermetically sealing including the large-sized substrate 21 is employed, the cost is reduced. There was a problem of rising. In addition, a means of applying and protecting a resin (not shown) around the optical semiconductor devices 13 and 15 is conceivable. However, in that case, there is a problem that airtightness is poor and reliability cannot be secured.

  On the other hand, in the optical semiconductor devices 13 and 15 shown in FIGS. 2 and 3, the window 29 material and the lid 27 that is the sealing material are separate, so a margin is required between the window 29 and the lid 27. Therefore, there is a problem that the apparatus becomes large. In the optical semiconductor device of FIG. 2, although the reliability can be ensured by hermetic sealing, since the diameter of the lead pins 33 is as large as about 0.8 mm, it is difficult to make the interval between the lead pins 33 close. There is a problem that the size of 25 becomes larger than the size of the optical semiconductor element array 15. Therefore, it is possible to make the diameter of the lead pin 33 thinner. However, since the strength of the lead pin 33 is weakened, there is a problem that the pin is easily bent or broken. In addition, since the joint portion (margin) between the window 29 and the housing 25 prevents light input / output, there is a problem that the size of the housing 25 must be increased in order to input / output a sufficient amount of light. there were. On the other hand, the input / output light amount can be adjusted by reducing the joint portion between the window 29 and the lid 27 instead of increasing the size of the housing 25. There was a problem that the airtightness of the time deteriorated.

  Further, in the conventional optical module shown in FIG. 4, it is necessary to prepare the substrate 21 for inputting / outputting light and the substrate 37 for inputting / outputting electricity separately. there were. Furthermore, since the substrates 21 and 37 are divided into two parts, the lead pins 33 and the adhesive 39 support the both, but there is a possibility that an excessive stress is applied to the adhesive 39. Therefore, when the adhesive 39 is peeled off or deteriorated, there is a problem that at least the optical coupling is changed and the loss is increased. Furthermore, since the substrates 21 and 37 are divided into two parts, a stress load that cannot be ignored is also applied to the lead pins 33, so that the diameter of the lead pins 33 must be increased. For this reason, there is a problem that the distance between the lead pins 33 cannot be made close, thereby increasing the size of the optical semiconductor device. Further, since the housing 25 of the optical semiconductor element 13, the lead pins 33, and the second substrate 37 are connected above the substrate 21, the size of the optical module in that direction is increased. . Furthermore, since the window 29 is joined to the inside of the lid 27, a large area of the adhesive 39 layer is generated between the window 29 and the substrate 21. Due to the presence of the adhesive 39 layer, there has been a problem that the light propagation distance increases and the light loss increases. In addition, since the lid 27 is made of metal, it is difficult to use an ultraviolet (UV) curable resin 65 for bonding the optical semiconductor device and the substrate 21. In particular, when a material that does not transmit UV is used for the substrate 21, UV cannot be irradiated between the optical semiconductor device and the substrate 21 as well as between the window 29 and the substrate 21. There was a problem that the bonding of both was extremely difficult.

  In the conventional example of the optical module shown in FIG. 5, since the lens 41 travels outside the outer shape of the lid 27, the adhesive surface between the optical semiconductor device and the substrate 21 is only the apex of the lens 41, and the adhesive strength There was a problem that became very weak. Further, in the configuration of FIG. 5 in which the adhesive 39 is used between the optical semiconductor device and the substrate 21, the adhesive 39 covers the periphery of the lens 41. There was a problem that could not be obtained.

  The present invention has been made in view of these problems occurring in the prior art, and its object is a size extremely close to the size of an optical semiconductor element, which has a high degree of integration and good reliability. A semiconductor device and an optical module using the same are provided.

In order to achieve the above object, a first aspect of the optical semiconductor device of the present invention includes a hollow casing that is open in only one direction and a window that transmits light, and closes the opening of the casing. And a lid made of a material that can transmit light, and a light receiving / emitting surface that is at least one of a light receiving surface and a light emitting surface, and the light receiving / emitting surface is disposed on the inner bottom surface of the casing with the window facing the window. An optical semiconductor element, and metal wiring connected to the optical semiconductor element and extending from the inside of the casing to the outside of the casing and extending on the outer surface of the casing, A light shielding metal portion and a metal portion for joining to the casing are formed around the light shielding metal portion on the surface of the lid on the optical semiconductor element side, and the light shielding metal portion serves as a part of the lid. A window portion is defined.

The window portion may be made of a material that transmits ultraviolet rays.

  The metal wiring may be arranged over at least two adjacent surfaces on the outer peripheral surface of the housing.

  A pedestal having metal wiring is installed inside the housing.

  The optical semiconductor element may be an optical semiconductor element array having a plurality of light receiving / emitting surfaces.

  A plurality of the optical semiconductor elements may be mounted in the casing.

The window portion may be integrally formed with a lens structure projecting in a convex shape toward the light emitting / receiving surface of the optical semiconductor element.

  A resin may be coated around the optical semiconductor element with a lens shape.

The window may be characterized by having an inclined surface.

Further, in the present invention, the lid having the window portion, the larger dimension than the opening end of the housing, and can be characterized by passing through the U V light through window portion.

Further, the lid having the window portion may be larger in size than the opening end portion of the casing, and may include an alignment marker at an outer position of the casing.

Further, a filter may be disposed on the surface of the window portion .

The optical module of the present invention adheres the optical semiconductor device according to claim 1 1 2 of a substrate having a second metal wiring connected to the metal wiring, the substrate and the optical semiconductor device And an adhesive.

  Here, the optical semiconductor device may be mounted on the substrate so that input / output light of the optical semiconductor device is in a horizontal direction with respect to the substrate.

  In the configuration of the present invention, since the window material and the lid of the sealing material are configured using the same material, the optical semiconductor device can be reduced in size. Further, the optical semiconductor element is hermetically sealed with high airtightness, and the reliability of the optical semiconductor device can be improved. Further, by forming a metal film on the outer periphery of the lid by vapor deposition, a highly airtight joint using solder can be obtained. Further, since no lead pin is used, the size of the optical semiconductor device can be reduced. Furthermore, since the housing surface and the lid surface are joined via a bonding agent, the problem that the joint between the window and the housing hinders input / output of light can be avoided, and the size of the housing can be reduced. In addition, since the two actions of bonding to the housing and light input / output can be realized with the same material, the material cost can be reduced. Further, since the opening area of the window can be adjusted by changing the metal vapor deposition region, the amount of light input / output to / from the optical semiconductor device can be freely designed. In addition, since the bonding metal portion and the light shielding metal portion can be formed by a single metal vapor deposition step, the manufacturing process can be simplified. Since the substrate that inputs and outputs light is the same as the substrate that inputs and outputs electricity, the cost of the optical module can be reduced and the adhesive can be prevented from being peeled off or deteriorated. It is. Further, since a substrate having an optical waveguide or an optical fiber can be adhered close to the surface of the window, light loss can be suppressed and the module can be downsized. Furthermore, an ultraviolet (UV) curable resin can be used for bonding the optical semiconductor device and the substrate.

  In the present invention, the configuration in which the optical semiconductor device is mounted on the substrate so that the input / output light of the optical semiconductor device is in the horizontal direction with respect to the substrate may further increase the degree of freedom in the installation direction of the optical semiconductor device. I can do it.

  In the configuration in which the pedestal having the metal wiring is installed inside the casing of the present invention, it is possible to further prevent the tool of the bonding apparatus from hitting the casing. This can further reduce the size of the housing.

  In the configuration using the optical semiconductor element array as the optical semiconductor element of the present invention, all the optical semiconductor elements can be hermetically sealed at once. Further, it is possible to reduce the size of the optical semiconductor devices individually hermetically sealed in an array.

  In the configuration in which a plurality of optical semiconductor elements of the present invention are sealed in a single housing, it is possible to further reduce the size of the optical semiconductor devices individually hermetically sealed in an array. Furthermore, compared with the case where an optical semiconductor element array is used, leakage current in the element can be reduced, and crosstalk between adjacent channels can be reduced.

  In the configuration in which the lens is formed on the window toward the light emitting / receiving surface of the present invention, the light emitting / receiving efficiency in light input / output can be further improved by the lens. In addition, since the lens does not travel from the outer shape of the housing, there is no need to increase the size of the optical semiconductor device, and the adhesive surface between the optical semiconductor device and the substrate becomes the front of the lid, ensuring good adhesion. Can thin the adhesive layer formed between the window and the substrate. In addition, since the lens is installed in the gap region between the window and the casing having high airtightness, it is possible to obtain a stable lens effect for a long time. Furthermore, since the adhesive does not cover the lens, it is possible to avoid the change in focal length and the deterioration of optical coupling, which have been a concern in the past.

  In the configuration in which the resin is applied to the light receiving / emitting surface of the optical semiconductor element of the present invention, the optical semiconductor element and bonding can be protected not only by the lens but also by the resin. Disconnection due to impact or the like can be prevented.

  With the configuration in which the window is inclined according to the present invention, it is possible to prevent return light to the light emitting / receiving surface and return light to the outside due to reflection generated on the window end face when light is input / output to / from the outside.

  In the configuration in which the optical semiconductor element is mounted on the surface of the lid window of the present invention or the window of the housing, the propagation distance of light becomes shorter compared to the previous configuration, so that the propagation loss is reduced. The light emitting / receiving efficiency can be improved.

  In the configuration in which the dimension of the lid of the present invention is larger than that of the casing, UV light can be further irradiated from the direction perpendicular to the substrate, and good and uniform adhesion between the lid and the substrate can be obtained.

  The size of the lid of the present invention is larger than that of the housing, and in the configuration in which the marker is attached, the optical semiconductor device and the substrate can be more accurately fixed. Further, since the size of the lid is larger than that of the housing, the alignment marker can be observed and recognized even by a low-cost optical device such as an optical microscope.

  As described above, according to the present invention, it is possible to provide an optical semiconductor device having high airtightness, reliability, small size, low cost, and high performance, and an optical module using the same.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(First embodiment)
A first embodiment of an optical semiconductor device and an optical module using the same according to the present invention is shown in FIGS.

  The optical semiconductor device shown in FIG. 6 includes a box-shaped housing 25 having a groove 51, a flat lid 27 having a window 29, a bonding agent 31, an optical semiconductor element 13 having a light emitting / receiving surface 17, a metal wiring 23, and bonding. It is composed of a wire 35.

  The housing 25 has a shape of a bag or a box in which a groove (also referred to as an opening hole, a vacant room, or a void) 51 is formed on the upper surface of a rectangular parallelepiped. The external dimensions of the housing 25 are 1 mm × 1 mm × 0.5 mm, and the dimensions of the groove 51 of the housing 25 are 0.8 mm × 0.8 mm × 0.4 mm. As the material of the casing 25, for example, alumina ceramics are used. The lid 27 that covers the groove 51 of the housing 5 integrally has a window 29 that transmits infrared light inside thereof, and details of the structure will be described later.

  The bonding agent 31 for bonding the housing 5 and the lid 27 has a ring shape so as to be inserted into a contact portion between the upper surface of the housing 25 and the surface of the lid 27, and the material thereof is a metal solder. It is. The bonding agent 31 is melted by the heat treatment, and the casing 25 and the lid 27 are bonded. The optical semiconductor element 13 is an optical element such as a laser or a photodiode, and is a semiconductor chip of about 0.5 mm × 0.5 mm × 0.2 mm. Therefore, the volume of the optical semiconductor element 13 is approximately 1/10 of the housing 25. Since the optical semiconductor element 13 performs fiber communication using near infrared light, a semiconductor such as indium phosphide or gallium arsenide is generally used as the material.

  Metal wiring 23 is formed on the bottom surface of the groove 51 of the housing 25 by vapor deposition. The metal wiring 23 is composed of two electrodes on the anode side and the cathode side. Further, these metal wirings 23 extend through the housing 25 to the back surface (not shown) of the housing 25. The area of each electrode is 0.1 mm square, and the distance between them is 0.3 mm. Similarly, the width of each metal wiring 23 extended to the back surface of the housing 25 is also 0.1 mm, and the distance between both metal wirings 23 is also 0.3 mm. The optical semiconductor element 13 is fixed to a predetermined position (for example, the center position) on the bottom surface of the groove 51 of the housing 25 with the light emitting / receiving surface 17 facing the window 29. The electrode of the optical semiconductor element 13 and the metal wiring 23 are connected by a bonding wire 35.

  Next, the structure of the lid 27 will be described in detail. FIG. 7 shows a structure related to the lid 27 and the window 29 of the optical semiconductor device in the present embodiment. The lid 27 includes a window 29 that transmits infrared light, a bonding metal portion 53, and a light shielding metal portion 55. The entire lid 27 is made of sapphire, and the outer dimensions are 1 mm × 1 mm × 0.2 mm. An outer bonding metal portion 53 and an inner light shielding metal portion 55 are formed on the periphery of the lid 27 by a single metal vapor deposition step. As a result, the region where metal is not deposited can transmit infrared light as the window 29. The bonding metal part 53 contacts the bonding agent 31 and plays a role of bonding the lid 27 and the housing 25. The light shielding metal part 55 plays a role of adjusting the opening area of light input / output.

  The lid 27 is entirely made of sapphire. However, the material is not limited to this, and a material that can transmit UV light well can be selected.

  The operation of the optical semiconductor device of this embodiment will be briefly described. Electric input / output is performed by electrically connecting a metal wiring 23 (see FIG. 8 described later) on the outer surface of the housing 25 and an external device (not shown). In addition, light is input / output from the optical semiconductor element (for example, light emitting diode) 13 through the window 29 that transmits infrared light, or light received by the optical semiconductor element (for example, phototransistor) 13 is externally transmitted. This is done by optically connecting to an apparatus (not shown).

  Next, an embodiment of an optical module using the optical semiconductor device shown in FIG. 6 will be described with reference to FIG. This optical module includes an optical semiconductor device including the optical semiconductor element 13 and the like, a substrate 21 having a second metal wiring 57, an adhesive 39 for bonding the optical semiconductor device and the substrate 21, and a second bonding wire 59. It consists of and. As in FIG. 6, the optical semiconductor device includes a housing 25 having a groove 51, a lid 27 having a window 29, a bonding agent 31, an optical semiconductor element 13 having a light emitting / receiving surface 17, a metal wiring 23, and a bonding wire 35. Has been.

  The substrate 21 is made of a material that transmits light, such as quartz glass. The optical semiconductor device is bonded to the substrate 21 through an adhesive 39 so that the window 29 and the substrate 21 face each other. Further, the metal wiring 23 of the optical semiconductor device and the second metal wiring 57 are connected by a second bonding wire 59.

  The operation of the optical module will be briefly described below. Electric input / output is performed by electrically connecting the second metal wiring 57 and an external device (not shown). Light input / output is performed by optically transmitting light emitted from the optical semiconductor element 13 or received by the optical semiconductor element 13 with an external device (not shown) through the window 29 and the substrate 21 that transmit infrared light. Do by connecting.

  As described above, if the configuration of the optical semiconductor device as shown in FIG. 6 is used, the optical semiconductor device can be miniaturized because the window 29 material and the lid 27 of the sealing material are the same material. Further, in this optical semiconductor device, the optical semiconductor element 13 can be installed in a highly airtight space surrounded by the groove 51 and the lid 27 of the box-shaped casing 25, and thus the optical semiconductor element 13. Is hermetically sealed with high airtightness and can be protected from the external environment. As a result, the optical semiconductor element 13 can be prevented from being deteriorated, and the reliability of the optical semiconductor device can be improved.

  In addition, since the metal wiring 23 formed on the housing 25 is used for electrical connection with the external device without using the lead pin (see 33 in FIG. 4), it is about 0.3 mm or less. It is possible to make the wiring interval close. Therefore, the size of the housing 25 can be reduced, and consequently the size of the optical semiconductor device can be reduced. In addition, since the metal wiring 23 is deposited on the housing 25, there is no breakage such as bending or breakage of the lead pin, which is a concern in the conventional example.

  Furthermore, since the upper surface of the opening of the housing 25 and the back surface of the lid 27 are joined via the bonding agent 31, the joint portion (margin) between the window 29 and the lid 27 hinders the input and output of light. This problem can be avoided. Therefore, the size of the housing 25 can be reduced, and an optical semiconductor device having high airtightness can be manufactured while ensuring a sufficient bonding force.

  Further, as an effect obtained from the structure of the lid 27 shown in FIG. 7, a highly airtight joint using solder can be obtained by forming a metal film on the outer periphery of the lid 27 by vapor deposition. In addition, by using vapor deposition of a metal film, it is possible to realize the two actions of joining the lid 27 to the housing 25 and light input / output with the same material, so that the material cost can be reduced. It becomes. Furthermore, since the opening area of the window 29 can be easily adjusted by changing the metal vapor deposition region, the amount of light input to and output from the optical semiconductor device can be freely designed. In addition, since the bonding metal portion 53 and the light shielding metal portion 55 can be formed by a single metal vapor deposition step, the manufacturing process can be simplified.

  Further, if the configuration of the optical module as shown in FIG. 8 is used, the substrate 21 for inputting / outputting light is the same as the substrate for inputting / outputting electricity, so that the cost can be reduced. . Further, unlike the conventional case, the substrate 21 is not divided into two parts, so that stress is hardly applied to the adhesive 39, the metal wiring 23, the bonding wire 35 and the like. As a result, it is possible to avoid the conventional problem that the adhesive 39 is peeled off or deteriorated due to the stress and at least the optical coupling is changed to increase the loss. Furthermore, since there is no need to worry about breakage such as bending or breakage of the lead pin, the size of the optical semiconductor device can be reduced. Moreover, since only the optical semiconductor element 13 is connected above the substrate 21, the size of the optical module in that direction can be reduced. Furthermore, since the flat lid 27 having the window 29 integrally is joined to the end face of the edge of the housing 25, the necessary adhesive 39 layer between the window 29 and the substrate 21 can be made thinner than before. It becomes possible. In addition, it is possible to suppress the propagation distance of light and suppress an increase in light loss. In addition, since the lid 27 having the window 29 is a material that transmits ultraviolet (UV) light, ultraviolet (UV) curable resin is used as the adhesive 39 used for bonding between the optical semiconductor device and the substrate 21. I can do it. Many UV curable resins pass infrared light well and have a refractive index close to that of sapphire or quartz glass, so that not only the increase in optical loss can be suppressed, but also the refractive index matching with the substrate 21 and the window 29 is achieved. Therefore, it is possible to suppress an increase in reflection loss.

  The configuration of the first embodiment of the present invention has been described above, but the material of the housing 25 is not limited to the alumina-based ceramic as described above, and a material having a high air density can be selected. For example, other ceramics such as silicon carbide, silicon nitride, aluminum nitride, and zirconia may be used as the material of the housing 25. Further, glass such as quartz or sapphire may be used as the material of the housing 25. Although it is possible to use a metal such as aluminum or stainless steel as the material of the casing 25, it is necessary to increase the insulation with the metal wiring 23 through an organic thin film or the like. Although the possibility that the reliability of the optical semiconductor element 13 is deteriorated increases, it is also possible to use an organic material such as plastic having a low airtightness as the material of the housing 25.

  The bonding agent is not limited to metal solder such as gold tin, gold germanium, and tin lead, and a material that realizes high airtightness at the time of bonding can be selected. For example, a low-melting glass or a brazing agent can be used as the bonding agent 31.

  Further, the connection between the optical semiconductor element 13 and the metal wiring 23 is not limited to using the bonding wire 35 as described above, and can be performed by using, for example, a solder bump, a gold bump, an anisotropic conductive film, or the like.

  The material of the lid 27 is not limited to sapphire as described above, and any material having a high air density and transmitting near infrared light may be used. For example, quartz glass, borate glass, or the like can be used as the material of the lid 27.

  Moreover, as a combination of the materials of the lid 27 and the housing 25, materials having a similar thermal expansion coefficient are selected, thereby preventing peeling and destruction between the lid 27 and the housing 25 due to a temperature change in the external environment. Is possible.

  In the present embodiment, the substrate 21 of the optical module is made of a material that transmits light, such as quartz glass, but does not transmit light by performing a process such as making a hole in the material only in the region that transmits light. Materials can also be used. The metal deposition refers to all plating processes such as vacuum deposition, sputtering, ion plating, etc., as well as electroplating, chemical plating, thermal spraying, and the like.

(Second Embodiment)
The configuration of the second embodiment of the optical module using the optical semiconductor device of the present invention is shown in FIG. This optical module includes an optical semiconductor device, a substrate 21 having a second metal wiring 57, an adhesive 39 for bonding the optical semiconductor device and the substrate 21, and a second bonding wire 59. 6, the optical semiconductor device includes a housing 25 having a groove 51, a lid 27 having a window 29, a bonding agent 31, an optical semiconductor element 13 having a light emitting / receiving surface 17, a metal wiring 23, and a bonding wire. However, the difference is that the metal wiring 23 is arranged over at least two adjacent surfaces of the outer peripheral surface of the housing 25. In FIG. 9, the surface of the optical semiconductor device fixed to the substrate 21 is changed compared to the configuration of FIG. 8, so that input / output light to the optical semiconductor element 13 is parallel to the surface of the substrate 21. In addition, one side surface of the housing 25 is installed on the substrate 21 with an adhesive 39 interposed therebetween. In addition, since the material and manufacturing method of each component are the same as those in the first embodiment, description thereof will be omitted.

  The operation of the optical module will be briefly described below. As in the embodiment of FIG. 8, the input / output of electricity is performed by electrically connecting the second metal wiring 57 and an external device (not shown). This is performed only through the window 29 that transmits infrared light without passing through.

  In the present embodiment, by adopting such a configuration, in addition to obtaining the effects described in the first embodiment, the degree of freedom in the installation direction of the optical semiconductor device can be increased. That is, since the metal wiring 23 of the optical semiconductor device is arranged over at least two adjacent surfaces of the outer peripheral surface of the housing 25, the surface of the optical semiconductor device fixed to the substrate 21 is changed to an arbitrary surface. As a result, the second bonding wire 59 can be applied to the housing 25 and can be connected to the second metal wiring 57 to input and output electricity.

  According to the present embodiment, the metal wire 23 and the second metal wire 57 are connected by hitting the second bonding wire 59 on the upper portion of the housing 25, but bonding is performed by directing the metal wire 23 toward the surface of the substrate 21. It is also possible to input / output electricity by directly contacting the metal wiring 23 and the second metal wiring 57 without using the wire 35. In any case, as described above, the degree of freedom in the installation direction of the optical semiconductor device can be increased.

(Third embodiment)
The configuration of the third embodiment in the optical semiconductor device of the present invention is shown in FIG. This optical semiconductor device includes a bowl-shaped or box-shaped housing 25 having a groove 51, a flat lid 27 having a window 29, a bonding agent 31, and a light emitting / receiving surface 17, as shown in FIGS. The optical semiconductor element 13, the metal wiring 23, and the bonding wire 35 are different from each other in that a pedestal 61 having the metal wiring 23 is installed inside the housing 25. This pedestal 61 has substantially the same height as the optical semiconductor element 13. The metal wiring 23 is composed of two electrodes on the anode side and the cathode side, and is also installed on the pedestal 61. The electrode of the optical semiconductor element 13 and the metal wiring 23 on the pedestal 61 are connected by a bonding wire 35. The metal wiring 23 on the pedestal 61 and the metal wiring 23 on the bottom surface of the groove 51 penetrate the housing 25 and extend to the back surface of the housing 25. The area of each electrode of the optical semiconductor element 13 is 0.1 mm square, and the distance between them is 0.3 mm. Similarly, the width of each of the pair of metal wires 23 extended to the back surface of the housing 25 is 0.1 mm, and the distance between them is also 0.3 mm. In addition, since the material and manufacturing method of each component are the same as those in the first and second embodiments described above, description thereof is omitted.

  The operation of the optical semiconductor device of the present embodiment is the same as that of the optical semiconductor device shown in FIG. Electric input / output is performed by electrically connecting the metal wiring 23 on the outer surface of the housing 25 and an external device (not shown). Also, light input / output is optically connected to an external device (not shown) through the window 29 that transmits infrared light, light emitted from the optical semiconductor element 13 or received by the optical semiconductor element 13. To do.

  In the present embodiment, by adopting such a configuration, in addition to obtaining the effects described in the first embodiment, the following effects can be obtained. That is, in wire bonding between the semiconductor element 13 and the metal wiring 23 on the pedestal 61, the tool (not shown) of the bonding apparatus may be lowered to the top surface of the pedestal 61 instead of down to the bottom surface of the groove 51. It is possible to prevent hitting 25. This has a great effect that the housing 25 can be further downsized. Further, in the wire bonding work to the bottom of the deep groove 51, a region where the field of view is blocked by the housing 25 is generated, and the fine work is difficult. However, the pedestal 61 can avoid this problem. Further, since the height of the pedestal 61 is equal to the height of the optical semiconductor element 13, almost no step is generated in the wire bonding between the optical semiconductor element 13 and the metal wiring 23 on the pedestal 61. Thereby, the wire length of the bonding wire 35 can be shortened, and as a result, bonding with a low inductance is attained. In addition, when wire bonding is performed at two points between the optical semiconductor element 13 and the metal wiring 23 on the pedestal 61 using an optical microscope (not shown), there is almost no step between the two, so that both are in focus at the same time. More accurate bonding is possible with a simple process.

  According to this embodiment, the anode and cathode two-pole metal wiring 23 is arranged on the pedestal 61. However, when the back surface opposite to the light receiving surface 17 of the optical semiconductor element 13 is an anode or a cathode, The metal wiring 23 corresponding to one electrode may be installed on the pedestal 61, and the metal wiring 23 corresponding to the other electrode may be installed on the bottom surface of the groove 51 of the housing 25. At this time, by bringing the back surface of the optical semiconductor element 13 into contact with the metal wiring 23 on the bottom surface of the groove 51 of the housing 25, one electrode can be electrically connected without the bonding wire 35. The electrodes on the optical semiconductor element 13 are connected to the metal wiring 23 on the pedestal 61 via the bonding wires 35. Even in the case of such a configuration, the effect of the present embodiment described above can be obtained similarly.

(Fourth embodiment)
The configuration of the fourth embodiment in the optical semiconductor device of the present invention is shown in FIGS. FIG. 11 is a sectional view thereof, and FIG. 12 is a perspective view thereof. This optical semiconductor device has substantially the same configuration as the optical semiconductor device shown in FIG. 6 except that the optical semiconductor element is an optical semiconductor element array 15 having a plurality of light emitting / receiving surfaces 17. In FIG. 11 and FIG. 12, drawing of the metal wiring 23 and the bonding wire 35 is omitted for simplicity. The outer dimension of the housing 25 is 1 mm ×× 3 mm × 0.5 mm, and the dimension of the groove 51 of the housing 25 is 0.8 mm × 2.8 mm × 0.4 mm. In this embodiment, a four-channel optical semiconductor element array 15 is used, and its size is about 0.5 mm × 2.0 mm × 0.2 mm. Therefore, the volume of the optical semiconductor element array 15 is approximately 2/15 of the volume of the housing 25. In addition, since the material and manufacturing method of each component are the same as those in the first to third embodiments, description thereof will be omitted.

  The operation of the optical semiconductor device of this embodiment will be briefly described. Electric input / output of each channel is performed by electrically connecting a metal wiring (not shown) on the outer surface of the housing 25 and an external device (not shown). The light input / output of each channel is emitted from the optical semiconductor element array 15 through the window 29 that transmits infrared light, or the light received by the optical semiconductor element array 15 is optically transmitted to an external device (not shown). By connecting to each other.

  In the present embodiment, by adopting such a configuration, in addition to obtaining the effects described in the first embodiment, the following effects can be obtained. That is, since all the optical semiconductor elements can be mounted in the housing 25 by a single mounting process using the optical semiconductor element array 15, mounting with high positional accuracy between the optical semiconductor elements is possible. Furthermore, all the optical semiconductor elements can be hermetically sealed at one time. Further, it is possible to reduce the size of the optical semiconductor devices that are individually hermetically sealed rather than arranging them in an array.

(Fifth embodiment)
The configuration of the fifth embodiment in the optical semiconductor device of the present invention is shown in FIGS. FIG. 13 is a sectional view thereof, and FIG. 14 is a perspective view thereof. This optical semiconductor device has substantially the same configuration as that of the optical semiconductor device of FIG. 6 except that a plurality of optical semiconductor elements 13 each having a light receiving surface 17 are mounted in one housing 25. In FIGS. 13 and 14, the drawing of the metal wiring 23 and the bonding wire 35 is omitted for simplicity. The outer dimension of the housing 25 is 1 mm × 3 mm × 0.5 mm, and the dimension of the groove 51 of the housing 25 is 0.8 mm × 2.8 mm × 0.4 mm. In this embodiment, four optical semiconductor elements 13 are used, and the size is about 0.5 mm × 0.5 mm × 0.2 mm. In addition, since the material and manufacturing method of each component are the same as those in the first to third embodiments, description thereof will be omitted.

  The operation of the optical semiconductor device of this embodiment will be briefly described. Electric input / output of each channel is performed by electrically connecting a metal wiring (not shown) on the outer surface of the housing 25 and an external device (not shown). In addition, the light input / output of each channel is optically transmitted to or from an external device (not shown) by the light emitted from the optical semiconductor element 13 or received by the optical semiconductor element 13 through the window 29 that transmits infrared light. Do by connecting.

  The optical semiconductor device according to the present embodiment obtains the same effect as that of the fourth embodiment in addition to the effect described in the first embodiment by adopting such a configuration. Can do. That is, since all the optical semiconductor elements 13 can be mounted in the housing 25 in a single mounting process, mounting with high positional accuracy between the optical semiconductor elements 13 is possible. Furthermore, all the optical semiconductor elements 13 can be hermetically sealed at a time. Further, it is possible to reduce the size of the optical semiconductor device, which is individually hermetically sealed. Furthermore, compared with the case where the optical semiconductor element array in the fourth embodiment is used, the apparatus of this embodiment can reduce the leakage current in the element and reduce the crosstalk between adjacent channels.

(Sixth embodiment)
The configuration of the sixth embodiment in the optical semiconductor device of the present invention and the module using the same is shown in FIG. The optical semiconductor device has substantially the same configuration as that of FIG. 6 and the optical module has substantially the same configuration as that of FIG. 8, but the optical semiconductor device has a lens structure 41 between the window 29 and the light emitting / receiving surface 17. In FIG. 15, for the sake of simplicity, drawing of the metal wiring 23 and the bonding wire 35, the second metal wiring 57 and the second bonding wire 59 is omitted.

  In this embodiment, the lens structure 41 is sapphire made of the same material as that of the window 29, and at the same time as the window 29 is manufactured, the lens structure 41 is integrally formed as a convex lens on the joint surface side surface. In addition, since the material and manufacturing method of each component are the same as those in each of the above embodiments, the description thereof is omitted.

  The operation of the optical module will be briefly described below. As in the embodiment of FIG. 8, electrical input / output is performed by electrically connecting a second metal wiring (not shown) and an external device (not shown), and light input / output also transmits infrared light. Through the window 29 and the substrate 21. At this time, the convex lens 41 collects infrared light.

  The optical module of the present embodiment has such a configuration, and in addition to obtaining the effects described in the above embodiments, the light collecting action by the lens 41 is obtained. The light emitting / receiving efficiency can be improved. Further, in the structure in which the plurality of light receiving and emitting surfaces 17 are arranged close to each other as shown in the fourth and fifth embodiments, the effect of reducing the optical crosstalk to the adjacent channel by the condensing action of the lens 41. Can be obtained. Furthermore, since the lens 41 is disposed between the window 29 and the light receiving surface 15, the lens 41 does not make a business trip from the outer shape of the housing 25. Therefore, by adding the lens 41, it is not necessary to increase the size of the optical semiconductor device, the adhesive surface between the optical semiconductor device and the substrate 21 becomes the front surface of the lid 27, and good adhesiveness can be secured. Since the layer of the adhesive 39 required between the substrate 29 and the substrate 21 can be made thin, it is possible to suppress the light propagation distance and suppress an increase in light loss. In addition, since the lens 41 is installed in the gap area between the window 29 and the housing 25 having high airtightness, contamination is prevented and a stable lens effect can be obtained for a long time. Furthermore, since the adhesive 39 does not cover the periphery of the lens 41, it is possible to avoid a change in focal length and deterioration of optical coupling, which have been a concern in the past.

  According to the present embodiment, the lens structure 41 is provided at an intermediate position between the window 29 and the light emitting / receiving surface 17, but the same effect can be obtained by forming the window itself in a lens structure such as a Fresnel lens. It is possible.

(Seventh embodiment)
The configuration of the seventh embodiment in the optical semiconductor device of the present invention is shown in FIG. This optical semiconductor device has substantially the same configuration as the optical semiconductor device shown in FIG. 6 except that a resin 65 having a lens shape is applied around the optical semiconductor element 13. In FIG. 16, drawing of the metal wiring 23 and the bonding wire 35 is omitted for simplicity. In the present embodiment, a silicone resin that transmits infrared light well and has high insulation is used as the resin 65. In addition, since the material and manufacturing method of each component are the same as those in each of the above embodiments, the description thereof is omitted.

  The operation of the optical semiconductor device of this embodiment will be briefly described below. As in the embodiment of FIG. 6, electrical input / output is performed by electrically connecting a metal wiring (not shown) and an external device (not shown), and light input / output also transmits infrared light. This is done through the window 29. At this time, the resin 65 having a lens shape collects infrared light.

  Since the optical semiconductor device of this embodiment has such a configuration, in addition to obtaining the effects described in each of the above embodiments, the light condensing action by the lens-shaped resin 65 can be obtained. The light emitting / receiving efficiency in the input / output of light can be improved. Further, in the structure in which a plurality of light receiving surfaces are arranged close to each other as shown in the fourth and fifth embodiments, the optical crosstalk to the adjacent channel is reduced by the condensing action of the lens-shaped resin 65. Effect can be obtained. In addition, the semiconductor element 13 and the bonding wire (35) can be protected by the resin 65, and disconnection due to vibration / impact can be prevented.

  According to the present embodiment, the silicone resin is used as the resin 65. However, the present invention is not limited to this, and an epoxy resin, a UV curable resin, or the like that transmits infrared light well and has high insulation is used as the resin 65. It is possible to obtain the same effect.

(Eighth embodiment)
The configuration of the eighth embodiment in the optical semiconductor device of the present invention is shown in FIGS. FIG. 17 is a cross-sectional view in the case where one optical semiconductor element 13 is used, and FIG. 18 is a cross-sectional view in which a plurality of optical semiconductor elements 13 are used. The optical semiconductor device has substantially the same configuration as that of the optical semiconductor device shown in FIGS. 6 and 13, except that the lid 27 having the window 29 has an inclined surface as shown in FIGS. Is to have. In FIGS. 17 and 18, the drawing of the metal wiring 23 and the bonding wire 35 is omitted for simplicity. Here, FIG. 17A is a cross-sectional view of the optical semiconductor device viewed from the front, and FIG. 17B is a cross-sectional view of the device of FIG. 17A viewed from the left side. Similarly, FIG. 187 (a) is a sectional view of the optical semiconductor device viewed from the front, and FIG. 18 (b) is a sectional view of the device of FIG. 18 (a) viewed from the left side.

  In the present embodiment, an inclined surface of, for example, 8 degrees is provided on one side of the window 29. As the material of the inclined surface, sapphire similar to the material of the window 29 is integrally used. In addition, since the material and manufacturing method of each component are the same as those in each of the above embodiments, the description thereof is omitted.

  The operation of the optical semiconductor device of this embodiment will be briefly described below. As in the embodiment of FIG. 6, electrical input / output is performed by electrically connecting a metal wiring (not shown) and an external device (not shown), and the light input / output is also a window 29 that transmits infrared light. Do through.

  With this configuration, the optical semiconductor device according to the present embodiment obtains the effects described above in the first embodiment, and in addition, at the time of optical input / output with an external device (not shown). Return light to the light emitting / receiving surface 17 and reflection light to an external device (not shown) due to reflection occurring at the end face of the window 29 can be prevented.

(Ninth embodiment)
FIG. 19 shows the configuration of the ninth embodiment in the optical semiconductor device of the present invention and the optical module using the same. The optical semiconductor device shown in FIG. 19 includes an optical semiconductor element 13 having a box-shaped housing 25 having a groove 51, a flat lid 27 having a window 29, a bonding agent 31 for joining the housing and the lid, and a light receiving and emitting surface 17. , Metal wiring 23, and bonding wire 35. FIG. 19 shows the configuration of the optical module in which the substrate 21 having the second metal wiring 57 is also depicted.

  The optical semiconductor element 13 is housed in the groove 51 of the housing 25, is directly fixed to the window 29, and has a structure in which light input / output from the light emitting / receiving surface 17 is directed toward the optical semiconductor element side.

  A metal wiring 23 is formed by vapor deposition on the surface (surface on the optical semiconductor element side) of the lid 27 that is bonded to the casing 25 via the bonding agent 31. The metal wiring 23 is composed of two poles on the anode side and the cathode side. Further, the metal wiring 23 extends through the lid 27 to the back surface of the lid 27. The area of each electrode of the optical semiconductor element 13 is 0.1 mm square, and the interval between the electrodes is 0.3 mm. The wiring width of the pair of metal wirings 23 extending to the back surface of the window 29 is also 0.1 mm, and the distance between them is also 0.3 mm. The optical semiconductor element 13 is directly fixed to the window 29 with its light emitting / receiving surface 17 facing away from the window 29. The electrode of the optical semiconductor element 13 and the metal wiring 23 are connected by a bonding wire 35. In addition, since the material and manufacturing method of each component are the same as those in each of the above embodiments, the description thereof is omitted.

  The operation of the optical module of this embodiment will be briefly described. Electric input / output is performed by electrically connecting the metal wiring 23 on the outer surface of the window 29 and a second metal wiring 57 connected to an external device (not shown). In addition, light input / output is performed by transmitting light from the optical semiconductor element 13 or receiving light received by the optical semiconductor element 13 through the window 29 that transmits infrared light and the substrate 21 that transmits infrared light. This is performed by optically connecting to (not shown).

  The optical module of the present embodiment has the above-described configuration, and in addition to obtaining the effects described in the first embodiment, the configurations of the first to eighth embodiments so far. As compared with, the propagation distance of light is shortened, so that the propagation loss is reduced and the light receiving and emitting efficiency can be improved.

(Tenth embodiment)
The configuration of the tenth embodiment of the optical semiconductor device of the present invention and the optical module using the same is shown in FIG. An optical semiconductor device shown in FIG. 20 includes a box-shaped housing 25 having a groove 51, a flat lid 27, a bonding agent 31 for joining the housing and the lid, an optical semiconductor element 13 having a light emitting / receiving surface 17, and a metal wiring 23. , And a bonding wire 35. FIG. 20 shows the configuration of the optical module in which the substrate 21 having the second metal wiring 57 is also depicted.

  The optical semiconductor element 13 has a structure in which light input / output from the light receiving / emitting surface 17 is performed toward the optical semiconductor element side. The housing 25 has a window function of transmitting infrared light. A metal wiring 23 is formed on the bottom surface of the groove 51 of the housing 25 by vapor deposition. The metal wiring 23 passes through the housing 25 and extends to the back surface of the housing 25. The optical semiconductor element 13 is fixed to the bottom surface of the groove 51 of the housing 25 with the light emitting / receiving surface 17 facing the lid 27 side. The electrode of the optical semiconductor element 13 and the metal wiring 23 are connected by a bonding wire 35. In addition, since the material and manufacturing method of each component are the same as those in each of the above embodiments, the description thereof is omitted.

  The operation of the optical module of this embodiment will be briefly described. Electric input / output is performed by electrically connecting the metal wiring 23 on the outer surface of the housing 25 and a second metal wiring 57 connected to an external device (not shown). In addition, light is input / output from the optical semiconductor element 13 through the housing 25 and the substrate 21 that transmits infrared light, or light received by the optical semiconductor element 13 is optically transmitted to an external device (not shown). Do by connecting to.

  The optical module of the present embodiment has the above-described configuration, and in addition to obtaining the effects described in the first embodiment, the first to the first, similarly to the ninth embodiment. Compared with the configuration of the eighth embodiment, the propagation distance of light is shortened, so that the propagation loss is reduced and the light receiving and emitting efficiency can be improved.

(Eleventh embodiment)
The configuration of the eleventh embodiment of the optical semiconductor device and the optical module using the same of the present invention is shown in FIG. This configuration is almost the same as that shown in FIGS. 6 and 8, except that the lid 27 having the window 29 has a size larger than that of the housing 25 and transmits UV light. is there. Further, if the substrate 21 and the lid 27 are bonded by the UV curable resin 65 for transmitting UV light, the bonding can be made stronger. In addition, since the material and manufacturing method of each component are the same as those in each of the above embodiments, the description thereof is omitted.

  The operation of the optical module of this embodiment will be briefly described below. As in the embodiment of FIG. 8, the input / output of electricity is performed by electrically connecting the second metal wiring 57 and an external device (not shown), and the input / output of light is also a window 29 that transmits infrared light. And the substrate 21.

  The optical module of this embodiment can irradiate UV light from the vertical direction of the substrate 21 by adopting such a configuration. In addition, the UV curable resin 65 is cured by the UV light, so that good and uniform adhesion between the lid 27 and the substrate 21 can be obtained.

(Twelfth embodiment)
The configuration of the twelfth embodiment of the optical semiconductor device of the present invention and the optical module using the same is shown in FIG. This configuration is almost the same as that shown in FIGS. 6 and 8, except that the lid 27 having the window 29 has a size larger than that of the housing 25 and the alignment marker 67 is provided. It is to have outside the body 25. Further, similarly to the eleventh embodiment, the substrate 21 and the lid 27 are bonded by the UV curable resin 65. In addition, since the material and manufacturing method of each component are the same as those in each of the above embodiments, the description thereof is omitted.

  The operation of the optical module of this embodiment will be briefly described below. As in the embodiment of FIG. 8, the input / output of electricity is performed by electrically connecting the second metal wiring 57 and an external device (not shown), and the input / output of light is also a window that transmits infrared light. 29 and the substrate 21.

  Since the optical module of this embodiment can use the alignment marker 67 with such a configuration, it is possible to fix the optical semiconductor device and the substrate 21 with high accuracy. Further, since the size of the lid 27 is larger than that of the housing 25, the alignment marker 67 can be observed and recognized by a relatively low cost optical device such as an optical microscope.

(13th Embodiment)
FIG. 23 shows the configuration of the thirteenth embodiment of the optical semiconductor device of the present invention. This optical semiconductor device has substantially the same configuration as that of the optical semiconductor device of FIG. 6, except that a counterbore 69 is provided on the surface of the lid 27 having the window 29 to produce a step. . In FIG. 23, drawing of the metal wiring 23 and the bonding wire 35 is omitted for simplicity. In addition, since the material and manufacturing method of each component are the same as those in each of the above embodiments, the description thereof is omitted. The spot facing portion 69 can be easily created by dicing or etching the surface side of the window 29.

  The optical semiconductor device according to the present embodiment is configured as described above, so that the portion of the counterbore 69 is joined to the housing 25 to join the lid 27 having the window 29 and the housing 25 with high positional accuracy. It becomes possible.

(Fourteenth embodiment)
The configuration of the fourteenth embodiment in the optical semiconductor device of the present invention is shown in FIG. This optical semiconductor device has substantially the same configuration as that shown in FIG. 6 except that a filter 71 is provided on the surface of the lid 27 having the window 29. In FIG. 24, drawing of the metal wiring 23 and the bonding wire 35 is omitted for the sake of simplicity. In addition, since the material and manufacturing method of each component are the same as those in each of the above embodiments, the description thereof is omitted. The filter 71 is installed by adhering a thin film filter to the surface of the window 29. Further, the filter 71 may have a characteristic of separating 1.5 μm light and 1.3 μm light, for example.

  The optical semiconductor device according to the present embodiment is configured as described above, and the band of light emitted from the optical semiconductor element 13 is filtered by joining the lid 27 having the filter 71 bonded to the window 29 to the housing 25. The light of the wavelength selected by 71 or selected by the filter 71 can be received by the optical semiconductor element 13.

  In FIG. 24, the filter 71 is provided outside the surface of the window 29, but may be provided inside the window 29 or on both sides thereof. As a method for manufacturing the filter 71, in addition to bonding, a multilayer film or the like may be directly deposited on the window 29, or the multilayer film or the like may be simply installed by simply sandwiching it between the housing 25 and the lid 27. Is possible. Further, as the filter 71 usable in the optical semiconductor device of the present invention, in addition to the filter having the function of wavelength separation described above, a filter that transmits and reflects part of input / output light is used. When the element 13 is a photodiode (PD), it can function as a light intensity monitor by inputting a part of light. Further, if a non-reflective coding filter is used as the filter 71 usable in the optical semiconductor device of the present invention, reflection at the window interface can be suppressed. In addition, these filters and non-reflective coating films are provided on all the optical semiconductor elements in a lump like a cylindrical lens even when applied to the multiple optical semiconductor elements shown in FIGS. Alternatively, the lens 41 may be provided individually, or the lens 41 may be provided directly above or not according to the purpose of the built-in LDs and PDs.

(Other embodiments)
Although the preferred embodiments of the present invention have been described using specific examples, the embodiments of the present invention are not limited to the above-described examples, and the scope described in each claim of the claims. If it is inside, various modifications such as replacement, change, addition, increase / decrease in number, change in shape, etc. of the constituent members are all included in the embodiment of the present invention. For example, the casing 25 described above has been described as a bowl shape or a box shape, but is not limited thereto, and may be, for example, a cylindrical bowl shape.

It is a perspective view which shows the structure of the optical semiconductor device in the prior art example described in patent document 1, and an optical module. 10 is a cross-sectional view showing a structure of an optical semiconductor device in a conventional example described in Patent Document 2. FIG. It is sectional drawing which shows the structure of the conventional optical semiconductor device which airtightly sealed the optical semiconductor element of only 1 element. It is sectional drawing which shows the structure of the conventional optical module incorporating an optical semiconductor device. It is sectional drawing which shows the structure of the conventional optical module incorporating the optical semiconductor device with which the lens was attached. 1 is a perspective view showing a structure of an optical semiconductor device in a first embodiment of the present invention. It is a top view which shows the structure regarding the lid | cover of the optical semiconductor device in the 1st Embodiment of this invention. It is sectional drawing which shows the structure of the optical module in the 1st Embodiment of this invention. It is sectional drawing which shows the structure of the optical module in the 2nd Embodiment of this invention. It is sectional drawing which shows the structure of the optical semiconductor device in the 3rd Embodiment of this invention. It is sectional drawing which shows the structure of the optical semiconductor device in the 4th Embodiment of this invention. It is a perspective view which shows the structure of the optical semiconductor device in the 4th Embodiment of this invention. It is sectional drawing which shows the structure of the optical semiconductor device in the 5th Embodiment of this invention. It is a perspective view which shows the structure of the optical semiconductor device in the 5th Embodiment of this invention. It is sectional drawing which shows the structure of the optical semiconductor device in the 6th Embodiment of this invention. It is sectional drawing which shows the structure of the optical semiconductor device in the 7th Embodiment of this invention. It is sectional drawing which shows the structure of the optical semiconductor device in the 8th Embodiment of this invention. It is sectional drawing which shows the structure which used the some optical semiconductor element in the optical semiconductor device in the 8th Embodiment of this invention. It is sectional drawing which shows the structure of the optical semiconductor device in the 9th Embodiment of this invention. It is sectional drawing which shows the structure of the optical semiconductor device in the 10th Embodiment of this invention. It is sectional drawing which shows the structure of the optical semiconductor device in the 11th Embodiment of this invention. It is sectional drawing which shows the structure of the optical semiconductor device in the 12th Embodiment of this invention. It is an exploded sectional view showing the structure of the optical semiconductor device in the 13th embodiment of the present invention. It is sectional drawing which shows the structure of the optical semiconductor device in the 14th Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Optical module 13 Optical semiconductor element 15 Optical semiconductor element array 17 Light-receiving / emitting surface 19 Optical waveguide 21 Substrate 23 Metal wiring 25 Case 27 Lid 29 Window 31 Bonding agent 33 Lead pin 35 Bonding wire 37 Second substrate 39 Adhesive 41 Lens 51 Groove 53 Metal part for joining 55 Metal part for light shielding 57 Second metal wiring 59 Second bonding wire 61 Base 65 Resin 67 Marker 69 Counterbore 71 Filter

Claims (14)

A hollow housing that is open in only one direction;
A lid made of a material capable of transmitting light that has a window portion that transmits light and closes and seals the opening of the housing;
An optical semiconductor element having a light receiving / emitting surface which is at least one of a light receiving surface and a light emitting surface, and disposed on the inner bottom surface of the housing with the light receiving / emitting surface facing the window portion;
Metal wiring connected to the optical semiconductor element and extending from the inside of the casing to the outside of the casing and extending on the outer surface of the casing, and
On the surface of the lid on the side of the optical semiconductor element , a light shielding metal part and a metal part for joining to the casing are formed around the light shielding metal part,
The optical semiconductor device, wherein the window portion is defined as a part of the lid by the light shielding metal portion.   The optical semiconductor device according to claim 1, wherein the window portion is made of a material that transmits ultraviolet rays.   3. The optical semiconductor device according to claim 1, wherein the metal wiring is disposed over at least two adjacent surfaces on the outer peripheral surface of the housing.   4. The optical semiconductor device according to claim 1, wherein a pedestal having metal wiring is installed inside the casing.   The optical semiconductor device according to claim 1, wherein the optical semiconductor element is an optical semiconductor element array having a plurality of light receiving and emitting surfaces.   5. The optical semiconductor device according to claim 1, wherein a plurality of the optical semiconductor elements are mounted in the casing.   7. The optical semiconductor device according to claim 1, wherein a lens structure that protrudes in a convex shape toward the light emitting / receiving surface of the optical semiconductor element is integrally formed in the window portion. .   7. The optical semiconductor device according to claim 1, wherein a resin is applied around the optical semiconductor element so as to have a lens shape.   The optical semiconductor device according to claim 1, wherein the window has an inclined surface. It said lid having a window portion, the larger dimension than the opening end of the casing, and an optical semiconductor according to claim 1, characterized in that passing through the UV light 9 via the window portion apparatus. Said lid having a window portion, the larger dimension than the opening end of the housing, and any one of claims 1 1 0, characterized in that it comprises a positioning marker to the outside position of the housing An optical semiconductor device according to 1. On the surface of the window, the optical semiconductor device according to claim 10, characterized in that it is disposed a filter 1 1. The optical semiconductor device according to claim 1 1 2,
A substrate having a second metal wiring connected to the metal wiring;
An optical module comprising the optical semiconductor device and an adhesive that bonds the substrate. The optical module according to claim 1 3 O light, so that the horizontal direction with respect to the substrate, characterized in that mounting the optical semiconductor device to the substrate of the optical semiconductor device.

Images