CN106816810A - Semiconductor laser light resource module and its manufacture method, laser light-source device and its manufacture method - Google Patents
Semiconductor laser light resource module and its manufacture method, laser light-source device and its manufacture method Download PDFInfo
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- CN106816810A CN106816810A CN201611079547.0A CN201611079547A CN106816810A CN 106816810 A CN106816810 A CN 106816810A CN 201611079547 A CN201611079547 A CN 201611079547A CN 106816810 A CN106816810 A CN 106816810A
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- semiconductor laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention provides a kind of semiconductor laser light resource module, laser light-source device and manufacture method that can be maintained high-quality and can compactly arrange multiple laser diodes.Semiconductor laser light resource module includes：Multiple semiconductor laser diodes (101R, 101G, 101B)；Internally by shell that semiconductor laser diode is closed；And sealing shell opening portion and make window portion (108) that the injection light of semiconductor laser diode passes through etc., semiconductor laser diode separated by base plate (106) respectively and be fixed in inner surface of outer cover regulation affixed scope, each several part utilization in shell will not be such that the reactionless material that semiconductor laser diode is deteriorated is arranged in shell, in casing component, the base plate at least forming affixed scope is formed by the hardware or fixedness inorganic material of thermal conductivity, enclosure is filled with inert gas or dry air, shell is sealed using reactionless material, or seal casing component directly with one another.
Description
Technical field
Light the present invention relates to project multiple wavelength, for showing semiconductor laser light resource module, laser with sensor
Light supply apparatus and their manufacture method.
Background technology
In the past, there is the laser light-source device for being used in various purposes：Such as project the number of provision wavelengths laser
According to read and image procossing, optic communication, projecting apparatus image show and medical diagnosis, the ophthalmology such as endoscopy etc. treatment
Deng.In recent years, this laser light-source device is built in the skill of small mobile terminals and wearable terminal as smart mobile phone
Art attracts attention.At this moment, laser projection device and LASER Light Source are just required miniaturization, slimming and lighting.In patent text
Disclosed in offering 1 and semiconductor Laser device is carried on framework, with the technology of resin-encapsulated.On the other hand, in patent document 2
In, disclose and encapsulate monochromatic luminous semiconductor Laser device using solder and low-melting glass, prevent anti-with organic matter generation
The technology of semiconductor laser element deterioration after answering.
Also, the laser light-source device of RGB three primary colors and infrared ray (IR) laser is projected come for scheming also by combination
As display processing, particularly for the technology of projection projecting apparatus.It is known, as projection projecting apparatus, there are MEMS (Micro
Electro Mechanical System:MEMS) or DMD (Digital Micromirror Device:Numeral is micro-
Mirror device) sweep type and LCOS (Liquid Crystal on Silicon:Liquid crystal on silicon) type.
Prior art literature
Patent document
Patent document 1：No. 3723426 publications of Japanese Patent No.
Patent document 2：No. 4678154 publications of Japanese Patent No.
The content of the invention
[technical problems to be solved by the invention]
By projecting the light of multiple wavelength, and multiplex is carried out, the device of the image and image that export shades of colour is built in
, it is necessary to further compactization in the case of in Miniature Terminal.If if however, as described above, by multiple wavelength
Multiple semiconductor laser light resource devices are lined up, then the overall size of semiconductor laser light resource device will increase, it is difficult to
Effectively make these laser composite waves in short space.Further, since semiconductor laser light resource device is merely tightly configured in
Together, the caloric value thus in narrow range can increase, it is difficult to effectively radiating.In addition, as described above, according to blue-light-emitting
Laser diode etc., then need to prevent the reaction with organic substance, it is therefore desirable to sealed in the case where organic matter is not used,
But in former technology, there is problems with：That is, effectively radiated, and compactly and while do not reduce quality
The module of the diode that manufacture is arranged with multiple wavelength is more difficult.
High-quality can be maintained it is an object of the invention to provide a kind of and the diode of compact arrangement multiple wavelength is partly led
Volumetric laser light source module, laser light-source device, the manufacture method of semiconductor laser light resource module and laser light-source device.
Solve the technical scheme that technical problem is used
In order to reach above-mentioned purpose, semiconductor laser light resource module of the invention, it is characterised in that including：
The semiconductor laser diode of two or more specified quantity；
Shell, the shell is internally configured with the semiconductor laser diode of above-mentioned specified quantity and closed；
The electrode pair of the group of above-mentioned specified quantity, the electrode pair is set across above-mentioned shell inside and outside, and according to from
The voltage that outside applies makes the electric current of regulation respectively flow through the semiconductor laser diode of above-mentioned specified quantity；And
By component, should directly or via framing component be secured by component, to seal an opening portion of above-mentioned shell,
The light for projecting above-mentioned semiconductor laser diode passes through and is exported from above-mentioned enclosure.
Insulated body separates the semiconductor laser diode of above-mentioned specified quantity respectively, is fixedly connected on the rule of the inside of above-mentioned shell
In fixed affixed scope.
The various pieces of above-mentioned enclosure are set using the reactionless material that will not deteriorate above-mentioned semiconductor laser diode
Put in above-mentioned shell.
Constitute the Fixed Division that above-mentioned affixed scope is at least formed in the casing component of above-mentioned shell, by thermal conductivity hardware or
The inorganic material of fixedness is formed.
Above-mentioned enclosure is filled with inert gas or dry air.
Above-mentioned shell utilization will not be sealed the reactionless material of above-mentioned semiconductor laser diode deterioration, or above-mentioned shell
Component is sealed directly with one another.
In order to reach above-mentioned purpose, laser light-source device of the invention, it is characterised in that including：
Semiconductor laser light resource module in claim 1~11 described in any one；And
The laser of the specified quantity to being projected from above-mentioned semiconductor laser light resource module carries out the coupling part of multiplex.
In order to reach above-mentioned purpose, the manufacture method of semiconductor laser light resource module of the invention, it is characterised in that bag
Contain：
Across enclosure and the outside operation to form electrode pair；
In the affixed scope specified on the inner surface of above-mentioned shell, to two or more in the state of insulated body each other separates
The operation that the semiconductor laser diode of specified quantity is engaged；
The operation of wire bonding is carried out to above-mentioned semiconductor laser diode and above-mentioned electrode pair；
To make what the injection light from above-mentioned semiconductor laser diode passed through directly or via framing component to consolidate by component
The operation of said one opening portion is sealed on the opening portion of be connected on above-mentioned shell one；
In the inside filling inert gas or the operation of dry air of above-mentioned shell；And
The operation of the opening portion of above-mentioned shell is sealed,
Constitute the Fixed Division of above-mentioned affixed scope is at least formed in the casing component of above-mentioned shell by the hardware of thermal conductivity or
Fixedness inorganic material is formed,
The various pieces of above-mentioned enclosure are set using the reactionless material that will not deteriorate above-mentioned semiconductor laser diode
Put in above-mentioned shell.
The sealing use of the opening portion and composition surface of above-mentioned shell will not make the reactionless of above-mentioned semiconductor laser diode deterioration
Material is carried out, or is directly sealed between above-mentioned casing component.
In order to reach above-mentioned purpose, the manufacture method of laser light-source device of the invention is with usage right requirement 14
Or the semiconductor laser light resource module described in 15 manufacture method and the laser light of semiconductor laser light resource module that manufactures
The manufacture method of source device, it is characterised in that include：
Using the Photocurable pressure-sensitive adhesive that can solidify under the light of provision wavelengths by above-mentioned sealing after to above-mentioned stated number
The coupling part that the injection light of the semiconductor laser diode of amount carries out multiplex is fixed in above-mentioned semiconductor laser light resource module in advance
Operation；
Adjustment is projected and by the operation of the position of pre- affixed above-mentioned coupling part from above-mentioned semiconductor laser diode；And
The light of above-mentioned provision wavelengths is irradiated come the operation of the above-mentioned coupling part after fixing position adjustment.
Invention effect
According to the present invention, in semiconductor laser light resource module and laser light-source device, with high-quality, and energy can be kept
Compactly arrange the effect of the diode of multiple wavelength.
Brief description of the drawings
Fig. 1 is the stereogram of the outward appearance of the semiconductor laser light resource module for representing the 1st implementation method.
Fig. 2 is the figure of the other examples for representing window portion shape.
Fig. 3 is the profile of the inside of the semiconductor laser light resource module of the 1st implementation method.
Fig. 4 is the overall perspective view of the laser light-source device for containing semiconductor laser light resource module.
Fig. 5 is the figure of the manufacturing process for representing laser light-source device.
Fig. 6 is the stereogram of the outward appearance of the laser light-source device of the 2nd implementation method.
Fig. 7 is the profile of the laser light-source device of the 2nd implementation method.
Specific embodiment
Hereinafter, embodiments of the present invention are illustrated with reference to the accompanying drawings.
[the 1st implementation method]
The semiconductor laser light resource module and laser light-source device of the 1st implementation method of the invention are illustrated first.
The semiconductor laser light resource module 100 of the 1st implementation method can also be used separately as laser light-source device.
Fig. 1 is the stereogram being monolithically fabricated of the semiconductor laser light resource module 100 for representing the 1st implementation method.
Semiconductor laser light resource module 100 can simultaneously project the laser of three colors (more than 2 regulation waters).Including：Red light
Source nude film 101R and its base 102R, green light source nude film 101G and its base 102G, blue-light source nude film 101B
And it base 102B, electrode 1031R, 1032R, 1031G, 1032G, 1031B, 1032B, bonding wire 1041R, 1042R,
1041G, 1042G, 1041B, 1042B, housing 105 (housing section), base plate 106, cap 107 and window portion 108 (transmission member)
Deng.
Hereinafter, by red light source nude film 101R, green light source nude film 101G and a part of blue-light source nude film 101B
Or all collectively referred to as (the Laser Diode of LD nude films 101：Laser diode).Below by one of base 102R, 102G, 102B
Divide or all collectively referred to as base 102.
Red light source nude film 101R is with single transverse mode (Single Transverse Mode；STM red laser) is projected
The nude film of the laser diode (LD) of surface installing type.Engage to form chip carrier (CoS with the one side of base 102R：
Chip on submount) structure.
Green light source nude film 101G is the laser diode (LD) of the surface installing type that green laser is projected with single transverse mode (STM)
Nude film.The CoS structures engaged in the one side with base 102G.
Blue-light source nude film 101B is the laser diode (LD) of the surface installing type that blue laser is projected with single transverse mode (STM)
Nude film.The CoS structures engaged in the one side with base 102B.
Base 102 is formed by thermal conductivity insulating component high, such as aluminium nitride (AlN).Base 102 with LD nude film phases
The opposing face in the face of engagement makes laser project direction alignment in the+x direction respectively, and in y-direction with a row slight gap (example
Such as, 1.2 millimeters are spaced or less than 1.2 millimeters etc., closely) it is joined on the position (affixed scope) specified on base plate 106.This
Sample, when being combined with wave multiplexer as described later, easily carries out optical match with the wave multiplexer.During engagement (affixed), using not
The welding material (reactionless material) of the volatile ingredient that can be reacted and deteriorate with LD nude films 101 containing epoxy resin etc., for example, making
The material constituted with the metal alloy without scaling powder.
Housing 105 constitutes three sides of rectangular shape herein in the shell in the internal space for having and accommodating LD nude films 101
Face and the edge of surplus next side.One of surface (lower section ,-z directions) of the upper and lower surface of open housing 105 is the bottom of by
Plate 106 is sealed, another surface (top ,+z directions), i.e., face partes tegmentalis 107 relative with base plate 106 is sealed.Only there is provided side
The bottom and upper segment at the edge of one side (+x directions) of edge extends on (+x directions) in the horizontal direction, between them
Opening portion is mounted with window portion 108, and laser is projected from inside by window portion 108.
Base plate 106 is formed as bigger than the bottom surface (side connected with base plate 106) of shell 105, on the base plate 106, i.e.,
The inner face side of shell, in addition to above-mentioned base 102 and LD nude films 101, direction (window is projected in the laser with LD nude films 101
The side of portion 108) opposition side (- x directions), multiple electrodes 1031R, 1032R, 1031G, 1032G, 1031B, 1032B (unite below
Referred to as electrode 1031,1032 etc.) formed a line on ± y directions, and set to outside shell 105 from housing 105.Each electrode
1031st, 1032 respective middle bodies pass through between housing 105 and base plate 106, across the inside and outside of housing 105 in+x
Side upwardly extends.Electrode 1031,1032 is utilized in printing tungsten, gold on consular district domain set in advance (electrode forming range) respectively
(Au) slurry carries out printed wiring obtained from film formation forming the method for pattern.If corresponding with each LD nude films 101
Anode is between electrode 1031 and the negative electrode i.e. electrode pair of the composition of electrode 1032, to apply assigned voltage from outside, then according to flowing through
Electric current project laser respectively from LD nude films 101.
In addition, in the lower surface (exterior side of shell) of base plate 106, Gold plated Layer is formed, so as to more effectively via the base plate
106 are radiated to outside.
Cap 107 is formed with the upper surface identical size with housing 105.
The component (casing component) of housing 105, base plate 106 and cap 107 employs that thermal conductivity is high and material of fixedness
Material.Herein, electric conductivity low high-insulativity ceramics (inorganic material of fixedness, the insulating component of thermal conductivity, insulation are employed
Body), such as AlN or aluminum oxide (Al2O3), it is preferred to use by being laminated the material that sintering process is generated.Constitute above-mentioned electrode
1031st, 1032 film is sandwiched in the interlayer of base plate 106 and housing 105 and sinters, thus does not have around the electrode 1031,1032
There is gap and closed.
So, when the component (Fixed Division) of the base plate 106 of base 102 is connected with using high-insulativity material, LD nude films
101 can not also use CoS, but are directly secured on base plate 106 in the state of no base 102.Due to not using bottom
Seat 102, therefore can further reduce the interval of the injection light of LD nude films 101.
The engagement of LD nude films 101 and base 102, the engagement of base 102 and base plate 106, LD nude films 101 and electrode 1031,
Engagement between 1032 via bonding wire 1041,1042 is all completed using welding material.
LD nude films 101 and base 102 can also be using the packaged articles of engagement in advance.
The welding material used as the engagement of base 102 (or nude film 101) and base plate 106 is low preferably using fusing point
Material, the SAC (without scaling powder) that fusing point is 220 DEG C is employed herein.Engage these bases 102 and base plate 106
When, gold thin film is first deposited with base plate 106, then base 102 is welded in the gold thin film.LD nude films 101 and electrode 1031,
Engagement between 1032 uses gold solder.
In addition, between base plate 106 and housing 105 because of the sintering of the ceramic material of housing 105 seamless combination.
In addition, all having been carried out on the composition surface of cap 107 and housing 105 gold-plated, the gilding is each other by welding material (nothing
Reaction material) contiguity.
Window portion 108 is that transparent material is formed for the laser using the colors of RGB tri- for projecting, and is to make light defeated from inside
Go out to outside optical component.Window portion 108 for example uses glass material.The shape of window portion 108 according to semiconductor laser light resource
The composition and purposes of the combination of module 100 are properly selected.For example, select to assemble assorted laser in a row respectively herein
The array structure of the coupled lens of the collimated light beam of Cheng Yilie.
Fig. 2 is the figure of the other examples of the shape for representing window portion 108.
Fig. 2 (a) illustrates the flat window portion 108a for making it directly pass through as the spot light of diverging light shape laser.Separately
Outward, Fig. 2 (b) illustrates cylindrical lens construction for allowing laser to be aligned on respective quick shaft direction (axle of cylinder is along y directions).
Implement respectively on the composition surface of window portion 108 and housing 105 it is gold-plated after, using can be naked with LD without epoxy resin etc.
The welding material (reactionless material) of the volatile ingredient that piece 101 reacts and deteriorates is engaged.Or, using multicomponent low melting point
The molded structure (casing component) made of glass fix the periphery of window portion 108, so as to the molded structure be directly fixed in
On housing 105, or, it is also possible to further implement gold-plated in the periphery of molded structure, using same welding material and housing
105 engagements.Also various adhesives are included in material comprising the composition that can be reacted and deteriorate with LD nude films 101.That is, semiconductor swashs
The bonding of the various pieces in radiant module 100 does not use such adhesive.
So, be completely enclosed inside housing 105, set LD nude films 101 it is inside and outside between will not have air, dirt
Angstrom and the turnover such as dust.In addition, engaged using welding material at sealing, therefore the volatile ingredient of adhesive etc. will not enter
It is internal.Inert gas and dry air of the inside of the housing 105 filled with referred to as nitrogen.
Fig. 3 is the profile of the inside of the semiconductor laser light resource module 100 for representing present embodiment.
Fig. 3 (a) is the profile cut along x/y plane, and Fig. 3 (b) is along cutting comprising the green light source nude film 101G in Fig. 3 (a)
The xz plane interior profile figures that face is cut.
As described above, the electrode 1031,1032 being formed on base plate 106 is by the bottom of housing 105 and lines up one respectively
Row are set to outside housing 105 from housing 105.
Inside housing 105, the respective anode-side of LD nude films 101 passes through bonding wire and electrode 1031R, 1031G, 1031B phase
Even, cathode side is connected by bonding wire with electrode 1032R, 1032G, 1032B.The bonding wire that the wiring of anode-side is used
Bonding wire 1042R, 1042G, 1042B that the wiring of 1041R, 1041G, 1041B and cathode side is used (below, are referred to as
It is bonding wire 1041,1042 etc.) all use gold thread.
Fig. 4 is the overall perspective view of the laser light-source device 1 for assembling semiconductor laser light resource module.The LASER Light Source is filled
Putting 1 includes semiconductor laser light resource module 100a, three coupled lens 200R, 200G, 200B and wave multiplexer 300 (coupling part)
Deng.
Semiconductor laser light resource module 100a is in addition to base plate 106a extends in the x direction, and semiconductor laser light resource
Module 100 is identical, thus like number is marked to same inscape and is omitted the description.
The red laser that coupled lens 200R will be projected from semiconductor laser light resource module 100a and by window portion 108
Directional light assemble and be directed to wave multiplexer 300 waveguide 320R entrance.Coupled lens 200G will be from semiconductor laser light resource
The directional light of module 100a and the green laser projected by window portion 108 is assembled and is directed to the waveguide 320G of wave multiplexer 300
Entrance.The blue laser that coupled lens 200B will be projected from semiconductor laser light resource module 100a and by window portion 108 it is flat
Row light assemble and be directed to wave multiplexer 300 waveguide 320B entrance.
Coupled lens 200R, 200G, 200B (hereafter referred to collectively as coupled lens 200) each using provision wavelengths light,
Ultraviolet (UV) curing adhesive that for example under ultraviolet light (UV light) can solidify is fixed in the above-mentioned extension of base plate 106a
On part.
Wave multiplexer 300 has 3 waveguides 320R, 320G, 320B (hereinafter also referred to collectively as waveguide 320).One of wave multiplexer 300
Side is provided with entry portal respectively towards these waveguides 320, after being provided with multiplex on the side of the opposition side of the side
A laser beam project exit wound of bullet 330.Waveguide 320 is totally reflected using the light to input wavelength in side
Thin-film material, such as aluminium obtained from hollow tube (hollow type light pipe).Or, it is also possible to use the ripple with the laser of input
The corresponding various known optical fiber of appearance, but it is either any, all employ and penetrated with from semiconductor laser light resource module 100a
The suitable STM optical fiber of STM laser, PLC (the Planar Lightwave Circuit for going out：Planar waveguiding circuit) STM lead
Light pipe etc..
Wave multiplexer 300 need exactly with project light matched position and fix, using various resin binders, for example above-mentioned
UV curing adhesives etc. are easily and the method for the precision positioning that can carry out μm level is joined on base plate 106.
In addition, during coupled lens 200 can be included in coupling part.
Then, the manufacture method of the laser light-source device 1 of present embodiment is illustrated.
Fig. 5 is the figure of the manufacturing process of the laser light-source device 1 for representing present embodiment.
First, on base plate 106a, by print tungsten, gold slurry come formed pattern method formed electrode 1031,
1032.Then, base plate 106a and housing 105 is clipped electrode 1031,1032 by sintering and touch (step S11).
Then, to each engagement of housing 105 and window portion 108, bottom 106a and base 102 and housing 105 and cap 107
Portion carries out gold-plated.The lower surface of base plate 106 is also carried out gold-plated (step S12).
Then, the LD nude films 101 and base 102 of CoS structures are engaged into base plate 106 using the solder without epoxy resin
Upper surface (step S13).Now, first by being deposited with the upper surface of base plate 106 and will not be short-circuited with electrode 1031,1032
In the range of formed metal (gold) film, in the engagement range of the base 102 using resist film etc. on the metallic film height
Precision ground forms the Thinfilm pattern of welding material.Then, after entering to be about to the installation that each base 102 navigates to the Thinfilm pattern,
The welding material is heated to fusing point, so as to be respectively and fixedly connected with base 102 and LD nude films 101 in the lump and engage correct position
Put.Here, it is also possible to when each base 102 is installed successively respectively, the minimum metal meeting of fusing point only in the alloy of welding material
Heated at a temperature of thawing, to be pre-fixed to the base 102, so as to shaking during mounting seat 102 after preventing therefore
Move and wait and produce position to offset.
Then, using bonding wire 1041,1042 and using gold solder by each electrode 1031,1032 and LD nude films 101 it
Between connect (step S14).Alternatively, it is also possible to utilization plated design between electrode 1031,1032 and bonding wire 1041,1042
Further form electrode.
Additionally, being bonded window portion 108 (step S15) on housing 105 using the solder without epoxy resin.
In addition, the operation of step S15 can also be carried out before the operation of step S13, S14.
Afterwards, rinsed inside housing 105 with nitrogen (inert gas) or dry air, while cap 107 is welded into shell
Housing 105 is sealed into (step S16) on body 105, so as to obtain semiconductor laser light resource module 100a.
Using Photocurable pressure-sensitive adhesive, herein for UV curing adhesives are pre- solid by coupled lens 200 and wave multiplexer 300
Determine to (step S17) on the base plate 6a of the semiconductor laser light resource module 100a for being formed like this.Coupling after to pre-fixing is saturating
The position of mirror 200 and wave multiplexer 300 is adjusted (active alignment) so that apply externally between electrode 1031,1032
Assigned voltage is projected come the laser for making each color from semiconductor laser light resource module 100a, and penetrating from wave multiplexer 300 simultaneously
The output of outlet 330 irradiates UV by the laser after appropriate multiplex in the stage for completing the adjustment to appropriate relative position relation
Light, makes UV curing adhesives solidify (step S18) rapidly, is derived from laser light-source device 1.
As described above, the semiconductor laser light resource module 100 of present embodiment includes：Three the three of wavelength are exported respectively
Semiconductor laser diode (LD nude films 101 and base 102)；These semiconductor laser diodes are configured internally and closed
Shell (housing 105, base plate 106 and cap 107)；Set across the inside and outside of shell, and applied according to from outside
Voltage makes the electric current of regulation respectively flow through three electrode pairs of the three of semiconductor laser diode groups of electrodes 1031,1032；And
Window portion 108, the window portion 108 is directly or affixed via molded structure, and an opening portion of shell is sealed, and swashs semiconductor
The light that projects of optical diode passes through and is exported from the inside of framework, and three semiconductor laser diodes are utilized respectively insulator (this
In be base plate 106) separate, and using welding material as SAC and it is gold-plated be fixed on inner surface of outer cover specify
Affixed scope, each several part utilization of enclosure will not make welding material, the metal coating that semiconductor laser diode is deteriorated
Etc. being arranged in the shell, in constituting the casing component of shell, at least base plate 106 by thermal conductivity fixedness inorganic material,
That is aluminium nitride (AlN) or aluminum oxide (Al2O3) formed, enclosure is filled with inert gas or dry air, and shell is utilized will not
Make welding material or the sealing such as plating material that semiconductor laser diode is deteriorated, or it is straight by the way that casing component is welded to one another
Connect sealing.
Thus multiple semiconductor laser diode high-density installations of the laser of multiple wavelength will be respectively projected, and effectively to coming
Radiated from the heat of this multiple semiconductor laser diode, and by the sealing of all semiconductor laser diodes, made without participant
Semiconductor laser diode produces the contact of the compositions such as the epoxy resin of problem.
Can be while exporting the Gao Pin of the compact semiconductor laser light resource module of the laser of multiple wavelength therefore, it is possible to obtain maintenance
Matter and can prevent deterioration the high reliability high life module.
Additionally, can easily will be above-mentioned while the laser aiming of multiple wavelength of output is to wave multiplexer 300 etc., being used in makes
With the various devices of the laser of the plurality of wavelength.
Additionally, in the component of composition shell, being at least connected with the base plate 106 of base 102 by thermal conductivity insulating component i.e. AlN
Or aluminum oxide (Al2O3) formed.Accordingly, it is capable to the insulating properties (10 between ensure LD nude films 10114Ω m are with first-class) while, efficiently
Ground is discharged by the heating of multiple LD nude films 101 from the whole bottom surface of semiconductor laser light resource module 100.
Additionally, being formed in an inner face from shell in a thin film manner by the electrode pair that the group of electrode 1031,1032 is constituted
To in the electrode forming range of outside regulation, the part contacted with electrode pair in shell is formed by heat conductivity insulating component.
Accordingly, it is capable to ensure the insulating properties of electrode, and the processing of slightly unmanageable thermal conductivity insulating component can be suppressed in Min.,
So as to be readily available semiconductor laser light resource module 100.Additionally, being delivered to bonding wire 1041,1042 from LD nude films 101
Deng and the heat of heated electrode also can efficiently be discharged into shell.
Additionally, shell is stretched with confession base plate 106 and inner surface extends to the shape of the housing exterior, electrode pair is formed as
Inner surface from base plate 106 can easily form electrode, and energy to the outside extended in the plane of base plate 106
Reduces cost and labour.
Additionally, clip to touch to be formed by sintering between the base plate 106 of electrode forming range and shell 105, electrode pair
The method of pattern is formed by tungsten of the printing with the fusing point higher than sintering temperature, gold (Au) slurry and is formed.Thus, can be
Base plate 106 is easily set to touch with housing 105 after the film that tungsten electrode or gold (Au) electrode are formed on base plate 106, and will not
Make electrode 1031,1032 generation problems, and can further cut down thermal conductivity insulating component i.e. AlN or aluminum oxide (Al2O3) etc. plus
Work energy.Accordingly, it is capable to reduces cost and labour, can easily carry out volume production, and can improve yield rate.
Additionally, being carried out metal respectively on direct between shell and window portion 108 or the affixed face via molded structure
Plating, the plating surface application each other by not comprising epoxy resin etc. can make LD nude films 101 deteriorate volatile ingredient welding material
And engage, therefore the composition that LD nude films 101 can be made to produce problem will not be inside the housing mixed into, can reliably by shell and window portion
108 composition surface sealing.
Additionally, shell has the shell of the upper surface open relative with the base plate 106 for being connected with base 102 (LD nude films 101)
Body 105 and the cap 107 for sealing the upper surface, housing 105 utilizes not including with cap 107 can deteriorate LD nude films 101
Volatile ingredient solder members and it is gold-plated come it is affixed.Accordingly, it is capable to LD nude films 101 are easily installed inside the housing, so
Reliably cap 107 can be sealed in the case where LD nude films 101 can be made to produce the composition of problem not to be mixed into enclosure afterwards.
Additionally, window portion 108 is with making the injection light of LD nude films 101 at least be registered to quick shaft direction respectively by selection
Lens arrangement, or selection is that lens arrangement of the injection light as the collimated light beam for forming a line is next suitably to be engaged with making.It is logical
Cross and suitable window portion 108 is set according to purposes as described above, so as to carry out reduction during multiplex to multiple injection light after
The energy and the number of components of adjustment.Accordingly, it is capable to obtain and be easily aligned ripple device output (that is, optically easily coupling) and easily utilize
Semiconductor laser light resource module 100, can easily expand utilization scope.
Additionally, the laser light-source device 1 of present embodiment include semiconductor laser light resource module 100a and to from this half
The laser of the specified quantity (three colors) that conductor Laser light source module 100a is projected carries out the coupled lens 200 and wave multiplexer of multiplex
303。
The semiconductor laser light resource module 100a integrally formed accordingly, with respect to sealing can be with less the number of components easily
Acquisition is compact and critically by the laser composite wave of multiple wavelength and the laser light-source device 1 of output.
Additionally, coupled lens 200 and wave multiplexer 300 are glued using the UV curing types that can solidify under ultraviolet light (UV light)
Mixture, is fixed on the relative position relation of the incident simultaneously multiplex of light projected from semiconductor laser light resource module 100a.That is, couple
Lens 200 and wave multiplexer 300 can rapidly be solidified in the stage for completing fine registration by the irradiation of UV light, therefore can be easily
Carry out fine registration.Additionally, the volatile ingredient that UV curing adhesives are included will not be to sealed enclosure
LD nude films 101 have undesirable effect, therefore the involved installation procedure of accurate adjustment becomes very easy.
Additionally, the manufacture method of the semiconductor laser light resource module 100 of present embodiment is included：Across shell (housing
105th, base plate 106 and cap 107) the inside and outside operation (step S11) to form 1031,1032 pairs, electrode；To shell
The affixed scope of regulation of inner surface, using LD will not be made naked in the state of being spaced from each other by insulator (being here base plate 106)
Welding material as the SAC of the deterioration of piece 101 and it is gold-plated come to the pole of semiconductor laser two of specified quantity (three)
The operation (step S12, S13) that pipe (LD nude films 101, base 102) is engaged；Using bonding wire 1041,1042 and pass through
The gold-plated operation (step S14) to carrying out wire bonding come to semiconductor laser diode and electrode；Directly or via molding
Component, and utilization will not make welding material that semiconductor laser diode deteriorates and will be made from half using gold-plated as needed
The window portion 108 that the injection light of conductor Laser diode passes through is fixed in an opening portion of shell so as to by said one opening portion
The operation (step S15) of sealing；The operation (step S16) of inert gas is filled inside the housing；And will using the grade of cap 107
The operation (step S16 etc.) of the opening portion sealing of shell as the upper surface of housing 105, in the casing component of composition shell,
The base plate 106 of affixed scope of semiconductor diode is at least formed by the fixedness inorganic material of thermal conductivity, i.e. aluminium nitride
Or aluminum oxide (Al2O3) formed, the sealing utilization of the opening portion and composition surface of shell will not deteriorate semiconductor laser diode
Welding material or plating material etc. carry out, or casing component is directly welded to each other.
By above-mentioned steps, multiple semiconductor laser diode high-density installations of the laser of multiple wavelength will be respectively projected, and
The heat from this multiple semiconductor laser diode is effectively set to be radiated, and by the sealing of all semiconductor laser diodes,
Make semiconductor laser diode produce the compositions such as the epoxy resin of problem to contact without participant, obtain such semiconductor laser
Source.
Can be while exporting the Gao Pin of the compact semiconductor laser light resource module of the laser of multiple wavelength therefore, it is possible to obtain maintenance
Matter and can prevent deterioration the high reliability high life module.
Additionally, just can easily and securely carry out each operation without special procedure, therefore management type and productivity can be improved,
So as to realize high reliability and cost reduction.
Additionally, the operation of step S12, S13 is included：In the semiconductor laser diode (base 102, i.e. for base plate 106
LD nude films 101) affixed scope formed welding material Thinfilm pattern operation；With the film for forming semiconductor laser diode
The consistent operation to be configured of pattern；And Thinfilm pattern is heated make its temporary transient melting, and semiconductor is swashed
Optical diode is critically secured to the operation in affixed scope.
Multiple semiconductor laser diodes (base 102 and LD nude films 101) can be critically fixed in the lump using above-mentioned operation
Correct position, therefore high-quality and can efficiently obtain compact semiconductor laser light resource module.
Additionally, laser can particularly exported to correct projects direction, therefore easily obtain with the grade of wave multiplexer 300 after output
Optical match, i.e. easily carry out position adjustment.
Additionally, the manufacture method of the laser light-source device 1 of present embodiment is included：Using the UV for solidifying under w light
Curing adhesive enters the injection light of three semiconductor laser diodes in semiconductor laser light resource module 100a to sealing
The wave multiplexer 300 of row multiplex is pre-fixed in the operation (step S17) of semiconductor laser light resource module 100a；Make semiconductor laser two
Pole pipe projects the operation (step S18) that laser is adjusted come the position to the wave multiplexer 300 for pre-fixing；And irradiation f light comes
The operation being fixed to the wave multiplexer 300 for completing position adjustment.
The assembling procedure for involving multiplex by the laser of the multiple wavelength that will be exported as described above is implemented to and sealed and defeated
Relative position adjustment between the semiconductor laser light resource module 100 and wave multiplexer 300 of outgoing direction determination, so as to only by closing
The alignment of ripple device 300 easily carries out position adjustment, and improves precision simultaneously, cuts down labour, and can utilize UV curing types
Adhesive is bonded to the semiconductor laser light resource module 100 after sealing, and causes bad shadow without having to worry about to LD nude films 100
Ring.Accordingly, it is capable to final affixed the two stages after pre-fixing and being aligned reasonably carry out high-precision assembling.
[the 2nd implementation method]
Then, the semiconductor laser light resource module and laser light-source device to the 2nd implementation method are illustrated.
Fig. 6 is the integrally-built stereogram of the laser light-source device 1b for representing present embodiment.
Laser light-source device 1b include semiconductor laser light resource module 100b and long wave pass 210R, 210G,
(long wavelength passes through wave filter to 210B；Hereafter referred to collectively as long wave pass 210) etc..
The semiconductor laser light resource module 100b of present embodiment include cylinder electrode 1131R, 1131G, 1131B,
1132R, 1132G, 1132B replace electrode 1031,1032, and replace housing using housing 115, base plate 116 and cap 117
105th, base plate 106 and cap 107.The phase of semiconductor laser light resource module 100 of structure in addition and above-mentioned 1st implementation method
Together, therefore mark identical label and omit the description.
In the semiconductor laser light resource module 100b of present embodiment, electroconductive member and thermal conductivity component, i.e. gold are used
Metal elements are used as housing 115, base plate 116 and cap 117.Hardware can select various materials, but more preferably based on heat conduction
Property height, the difficulty of processing and selection such as no-oxygen copper plate, aluminium sheet, the tungsten copper (Cu-W) such as material cost are such closes
Gold.In this case, it is also possible to the not metal film on the affixed face of base plate 116 and base 102, directly using mask pattern
Welding material is set to form film Deng in affixed scope.
These hardwares are directly fetched directly affixed by seam weld or Laser Welding, or can make LD nude films using not containing
The welding material of the volatile ingredient such as epoxy resin of 101 deteriorations is engaged.Set 1131G, 1131B, 1132R, 1132G,
1132B (hereinafter also referred to collectively as cylinder electrode 1131,1132) extends through base plate 116.
The light that long wave pass 210R makes wavelength ratio red laser long passes through, and the light below the wavelength is reflected.It is long
Wave pass filter 210R inclines 45 degree relative to the directional light of the red laser projected by semiconductor laser light resource module 100a to be come
Configuration makes red laser reflection its direction to change 90 degree on base station 410.
The light that long wave pass 210G makes wavelength ratio green laser long passes through, and the light below the wavelength is reflected.It is long
Wave pass filter 210G relative to the green laser projected by semiconductor laser light resource module 100a directional light incline 45 degree, and
And the reflection position of the green laser is configured to the red laser reflected by long wave pass 210R by position consistency.
Thus, green laser after being reflected through long wave pass 210G with by the red laser of long wave pass 210G same
Overlapped on bar line.
The light that long wave pass 210B makes wavelength ratio blue laser long passes through, and the light below the wavelength is reflected.It is long
Wave pass filter 210B relative to the blue laser projected by semiconductor laser light resource module 100a directional light incline 45 degree, and
And the reflection position of the blue laser is configured to the red laser reflected by long wave pass 210R and by the logical filter of long wave
Ripple device 210G reflection green laser by position consistency.Thus, through long wave pass 210B reflect blue laser with
Green laser and red laser overlap on the same line, the collimated light beam from laser light-source device 1a outgoing positions.
These long wave pass 210 can be using adhesive bond on base plate 116.Adhesive is for example solidified using UV
Section bar material, UV is irradiated by after the accurate adjustment of position relationship of the completion relative to semiconductor laser light resource module 100b terminates
Light, so that accurate and firmly fix.
Fig. 7 shows the profile of the laser light-source device 1b of present embodiment.
Fig. 7 (a) is that the profile for obtaining is cut along x/y plane, and Fig. 7 (b) is along the blue-light source nude film 101B comprising Fig. 7 (a)
Section cuts the xz faces interior profile figure for obtaining.
6 through holes are individually provided with base plate 116, the through hole runs through for cylinder electrode 1131,1132 respectively.
These through holes are formed respectively must be thicker than cylinder electrode 1131,1132, and is spaced so that cylinder electrode 1131,1132 will not
It is that base plate 116 is contacted and short-circuit with electroconductive member, and filled with insulation division 411R, 412R, 411G, 412G, 411B, 412B
(hereinafter also referred to collectively as insulation division 411,412).
Insulation division 411,412 uses glass material, for example, filled out as by cylinder electrode 1131,1132 and the gap of through hole
Full sealing is peeled off and configured by melting sealed.
As described above, in the semiconductor laser light resource module 100b and laser light-source device 1b of present embodiment, using
The CoS of LD nude films 101 is formed with the base 102 be made up of insulating component as semiconductor laser diode, in casing component,
The base plate 116 at least formed for the affixed part of base 102 is formed using electroconductive member, and base 102 utilizes and do not contain and can make
The welding material of the compositions such as the epoxy resin of the deterioration of LD nude films 101 is fixed on the upper surface (inner surface side of shell) of base plate 116.
In this case, also can efficiently be radiated to housing exterior from multiple LD nude films 101 of high-density array configuration, and
By carrying out unifying encapsulation, so as to rightly protect LD nude films 101, the long-life is realized, and can be exported from compact module
The light of suitable multiple wavelength of multiplex can easily be carried out.
Additionally, the electrode pair being made up of the cylinder electrode 1131,1132 corresponding with each LD nude films 101 is via through base plate
116 and set through hole by across the enclosure and outside in the way of configure, the through hole is non-volatile by glass material etc.
Property inorganic material sealed as seal glass, and base plate 116 and electrode pair are insulated using the glass material.Therefore,
The ease of processing of hardware can be produced, and electrode is arranged to suitable direction, and can be in compact module easily
And rightly maintain insulating properties each LD nude films 101 is worked.
In addition, the invention is not restricted to above-mentioned implementation method, various changes can be carried out.
For example, in the above-described embodiment, illustrating merely with AlN, aluminum oxide (Al2O3) form the example and only of shell
The example formed using hardware, but it is also possible to be combined both.Additionally, without all casing components all using height
Thermally conductive materials, at least form the part for the affixed scope of LD nude films 101, base 102, are here the one of base plate 106,116
Partly or entirely (Fixed Division), reliably radiated using high conductivity material, other parts, such as cap 107,
Even 117 different materials, as long as fixedness inorganic material etc. will not make to cause the composition of LD nude films 101 to volatilize, and
And appropriate holding sealing state, thermal diffusivity can be with relatively low.
Additionally, showing the example of the LD nude films 101 of the arrangement colors of RGB tri- in above-mentioned implementation method, but it is also possible to comprising it
His color, it is also possible to only double-colored.Additionally, the color (wavelength) for being included can also include infrared ray (IR).
Additionally, in above-mentioned implementation method, while be rinsed with inert gas or dry gas while carry out encapsulation process,
But encapsulation process can also be carried out in the atmosphere gas of inert gas or dry gas.
Additionally, in above-mentioned implementation method, the surface for being provided with electrode pair is not necessarily intended to consolidate with for LD nude films 101, base 102
The surface for connecing is the same face.Additionally, the surface for setting cap 107,117 can not also be with setting LD nude films 101, base 102
Surface is relative.However, opened by the relative face in the surface for making with set LD nude films 101, base 102, so as to more easily
Formation, the formation of welding material film and heating of pattern etc. is masked respectively to process.
Additionally, shown in above-mentioned implementation method it is being used when being engaged to each several part, will not make LD nude films 101 deteriorate without anti-
The illustration of material is answered to be not limited to welding material that the above-mentioned metal alloy without scaling powder is constituted etc..They can also part or complete
Portion repeats, it is also possible to different on all sites.
Additionally, in above-mentioned implementation method, using ultraviolet (UV) curing adhesive by coupled lens 200, wave multiplexer 300
Etc. being fixed on semiconductor laser light resource module 100a but it is also possible to be other materials.Anyway, due to semiconductor laser light resource
The enclosure of module 100a is sealed, therefore for LD nude films 101 can be made to produce volatile ingredient of problem etc., can be unrestricted
Be adjusted and affixed.
In addition, shown in above-mentioned implementation method structure, construction, the detail of manufacturing process can not depart from master of the present invention
Suitably changed in the range of purport.
Label declaration
1st, 1b laser light-source devices
100th, 100a, 100b semiconductor laser light resource module
101B blue-light source nude films
101G green light source nude films
101R red light source nude films
102R, 102G, 102B base
105th, 115 housing
106th, 116 base plate
107th, 117 cap
108 window portions
411R, 411G, 411B, 412R, 412G, 412B insulation division
200R, 200G, 200B coupled lens
210R, 201G, 201B long wave pass
300 wave multiplexers
320R, 320G, 320B waveguide
330 exits wound of bullet
1031R, 1031G, 1031B, 1032R, 1032G, 1032B electrode
1041R, 1041G, 1041B, 1042R, 1042G, 1042B bonding wire
1131R, 1131G, 1131B, 1132R, 1132G, 1132B cylinder electrode
Claims (16)
1. a kind of semiconductor laser light resource module, it is characterised in that including：
The semiconductor laser diode of two or more specified quantity；
Shell, the shell is internally configured with the semiconductor laser diode of the specified quantity and closed；
The electrode pair of the group of the specified quantity, the electrode pair is set across the shell inside and outside, and according to from
The voltage that outside applies makes the electric current of regulation respectively flow through the semiconductor laser diode of the specified quantity；And
By component, should directly or via framing component be secured by component, to seal an opening portion of the shell,
And the light that the semiconductor laser diode is projected is passed through and is exported from the enclosure,
Insulated body separates the semiconductor laser diode of the specified quantity respectively, is fixedly connected on the enclosure regulation
In affixed scope,
The various pieces of the enclosure are set using the reactionless material that will not deteriorate the semiconductor laser diode
Put in the shell,
Constitute the Fixed Division that the affixed scope is at least formed in the casing component of the shell, by thermal conductivity hardware or
Fixedness inorganic material is formed,
Described enclosure is filled with inert gas or dry air,
The shell utilization will not be sealed the reactionless material that semiconductor laser diode is deteriorated, or the casing component
Sealed directly with one another.
2. semiconductor laser light resource module as claimed in claim 1, it is characterised in that at least described solid in the casing component
Socket part is formed by thermal conductivity insulating component.
3. semiconductor laser light resource module as claimed in claim 2, it is characterised in that the electrode pair is crossing over the shell
An inner face to being formed in a thin film manner in outside fixed electrode forming range, docked with the electrode in the shell
Tactile part is formed by the thermal conductivity insulating component.
4. semiconductor laser light resource module as claimed in claim 3, it is characterised in that there is the shell inner face to extend
To the shape of the outside of the shell,
The electrode pair is formed in across in the electrode forming range of an inner face and the outside extended.
5. semiconductor laser light resource module as claimed in claim 4, it is characterised in that clip the institute of the electrode forming range
State and touch to be formed by sintering between casing component, the electrode pair is by the component with the fusing point higher than the sintering temperature
Formed.
6. semiconductor laser light resource module as claimed in claim 1, it is characterised in that the semiconductor laser diode be
The CoS of nude film is formed with the base be made up of insulating component,
At least described Fixed Division is formed by electroconductive member in the casing component,
The base is fixed in the affixed scope using the reactionless material that will not deteriorate the semiconductor laser diode
It is interior.
7. semiconductor laser light resource module as claimed in claim 6, it is characterised in that the electrode pair is configured as via passing through
The through hole of the casing component is worn, and across the inside and outside of the shell,
The through hole is encapsulated by the fixedness inorganic material, also, the shell and electrode pair insulation.
8. the semiconductor laser light resource module as any one of claim 1 to 7, it is characterised in that the shell and institute
State and each carried out metal-plated on the affixed face by the direct of component or via the framing component, these plating surface applications are utilized
The reactionless material of the semiconductor laser diode deterioration will not be made to be engaged with each other.
9. the semiconductor laser light resource module as any one of claim 1 to 8, it is characterised in that the shell has
The housing section of the upper surface open relative with the affixed scope, and by the upper surface seal cap, the housing section and
The cap is using the reactionless material that will not deteriorate the semiconductor laser diode or is directly secured.
10. semiconductor laser light resource module as claimed in any one of claims 1-9 wherein, it is characterised in that described by component
Lens arrangement with the injection light that the semiconductor laser diode is at least respectively aligned on quick shaft direction.
11. semiconductor laser light resource modules as claimed in any one of claims 1-9 wherein, it is characterised in that described by component
With making the injection light of the semiconductor laser diode turn into the lens arrangement of collimated light beam for forming a line.
A kind of 12. laser light-source devices, it is characterised in that including：
Semiconductor laser light resource module any one of claim 1 to 11；And
The laser of the specified quantity to being projected from the semiconductor laser light resource module carries out the coupling part of multiplex.
13. laser light-source devices as claimed in claim 12, it is characterised in that the coupling part is using the light in provision wavelengths
The lower Photocurable pressure-sensitive adhesive for solidifying, is fixed on the light incidence from semiconductor laser light resource module injection to carry out
The relative position relation of multiplex.
14. a kind of manufacture methods of semiconductor laser light resource module, it is characterised in that include：
Across enclosure and the outside operation to form electrode pair；
In the affixed scope specified on the inner surface of the shell, to two or more in the state of insulated body each other separates
The operation that the semiconductor laser diode of specified quantity is engaged；
The operation of wire bonding is carried out to the semiconductor laser diode and the electrode pair；
To make what the injection light from the semiconductor laser diode passed through directly or via framing component to consolidate by component
The operation of one opening portion is sealed on the opening portion of be connected on the shell one；
In the inside filling inert gas or the operation of dry air of the shell；And
The operation of the opening portion of the shell is sealed,
Constitute in the casing component of the shell and at least forming the Fixed Division of the affixed scope by conductive metal component structure
Part or fixedness inorganic material are formed.
The various pieces of the enclosure are arranged on using the reactionless material that will not deteriorate semiconductor laser diode
In the shell.
The sealing use of the opening portion and composition surface of the shell will not make the reactionless of the semiconductor laser diode deterioration
Material is carried out, or is sealed directly with one another in the casing component component.
The manufacture method of the 15. semiconductor laser light resource module as described in claim 14, it is characterised in that the engagement rule
The operation of the semiconductor laser diode of fixed number amount is included：
The operation of the Thinfilm pattern of the described first reactionless material is formed in the affixed scope；
The semiconductor laser diode is configured to the operation consistent with the Thinfilm pattern；And
Heat the operation that be fixed in for the semiconductor laser diode in the affixed scope by the Thinfilm pattern.
A kind of 16. manufacture methods of laser light-source device, the laser light-source device has using described in claim 14 or 15
Semiconductor laser light resource module manufacture method and the semiconductor laser light resource module that manufactures, it is characterised in that include：
Using the Photocurable pressure-sensitive adhesive that can solidify under the light of provision wavelengths by the sealing after to the stated number
The coupling part that the injection light of the semiconductor laser diode of amount carries out multiplex is fixed in the semiconductor laser light resource module in advance
Operation；
Adjustment is projected and by the operation of the position of the pre- affixed coupling part from the semiconductor laser diode；And
Irradiate the provision wavelengths light come fixed position adjustment after the coupling part operation.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015233052A JP6718224B2 (en) | 2015-11-30 | 2015-11-30 | Semiconductor laser light source module, laser light source device, method of manufacturing semiconductor laser light source module, and method of manufacturing laser light source device |
| JP2015-233052 | 2015-11-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106816810A true CN106816810A (en) | 2017-06-09 |
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ID=59016982
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611079547.0A Pending CN106816810A (en) | 2015-11-30 | 2016-11-30 | Semiconductor laser light resource module and its manufacture method, laser light-source device and its manufacture method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6718224B2 (en) |
| CN (1) | CN106816810A (en) |
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| WO2023164810A1 (en) * | 2022-03-01 | 2023-09-07 | 深圳市大疆创新科技有限公司 | Laser emitter, lidar, laser distance measurement device, and mobile platform |
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| JP7260329B2 (en) * | 2019-02-27 | 2023-04-18 | 京セラ株式会社 | Optical device mounting package, electronic device and electronic module |
| US20220149596A1 (en) * | 2019-03-25 | 2022-05-12 | Panasonic Corporation | Semiconductor laser device |
| JP7428867B2 (en) * | 2019-07-29 | 2024-02-07 | 日亜化学工業株式会社 | Laser light source, optical device, and method for manufacturing laser light source |
| JP2021158318A (en) * | 2020-03-30 | 2021-10-07 | 豊田合成株式会社 | Laser light source module |
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| JP2017103271A (en) | 2017-06-08 |
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