JP6717596B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6717596B2 JP6717596B2 JP2015250739A JP2015250739A JP6717596B2 JP 6717596 B2 JP6717596 B2 JP 6717596B2 JP 2015250739 A JP2015250739 A JP 2015250739A JP 2015250739 A JP2015250739 A JP 2015250739A JP 6717596 B2 JP6717596 B2 JP 6717596B2
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- insulator
- transistor
- oxide semiconductor
- conductor
- semiconductor
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/479—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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Description
(2)本発明の一態様は、第1の導電体と、第2の導電体と、第3の導電体と、第1の絶縁体と、第2の絶縁体と、半導体と、電子捕獲層と、を有し、半導体は、第2の導電体と接する第1の領域と、第3の導電体と接する第2の領域と、第1の領域と第2の領域との間に配置される第3の領域と、を有し、第1の導電体は、第1の絶縁体を介して第3の領域と互いに重なる領域を有し、第2の絶縁体は、第1の導電体の側面と接する領域を有するように配置され、電子捕獲層は、第2の絶縁体を介して第1の導電体と向かい合うように配置される半導体装置である。
(3)本発明の一態様は、第1の導電体と、第2の導電体と、第1の絶縁体と、第2の絶縁体と、第3の絶縁体と、半導体と、電子捕獲層と、を有し、半導体は、チャネル形成領域を有し、第1の導電体は、第1の絶縁体を介してチャネル形成領域と互いに重なる領域を有し、第2の絶縁体は、第1の導電体の側面と接する領域を有するように配置され、電子捕獲層は、第2の絶縁体を介して第1の導電体と向かい合うように配置され、第3の絶縁体は、第1の絶縁体および半導体と、を介して第1の導電体と、向かい合うように位置され、第2の導電体は、第3の絶縁体を介してチャネル形成領域と互いに重なる領域を有する半導体装置である。
(4)本発明の一態様は、第1の導電体と、第2の導電体と、第3の導電体と、第4の導電体と、第1の絶縁体と、第2の絶縁体と、第3の絶縁体と、半導体と、電子捕獲層と、を有し、半導体は、第2の導電体と接する第1の領域と、第3の導電体と接する第2の領域と、第1の領域と第2の領域との間に配置される第3の領域と、を有し、第1の導電体は、第1の絶縁体を介して第3の領域と互いに重なる領域を有し、第2の絶縁体は、第1の導電体の側面と接する領域を有するように配置され、電子捕獲層は、第2の絶縁体を介して第1の導電体と向かい合うように配置され、第3の絶縁体は、第1の絶縁体および半導体と、を介して第1の導電体と、向かい合うように配置され、第4の導電体は、第3の絶縁体を介して第3の領域と互いに重なる領域を有する半導体装置である。
(5)本発明の一態様は、電子捕獲層はアルミニウムまたは、ハフニウムを含むことを特徴とする、(1)乃至(4)のいずれか一に記載の半導体装置である。
(6)本発明の一態様は、第1のトランジスタと、第2のトランジスタと、を有し、第1のトランジスタは、第1の半導体と、第1のソース電極と、第1のドレイン電極と、第1のゲート電極と、第1の電子捕獲層と、を有し、第1の電子捕獲層は第1の半導体と互いに重なる領域を有し、第2のトランジスタは、第2の半導体と、第2のソース電極と、第2のドレイン電極と、第2のゲート電極と、第2の電子捕獲層と、を有し、第2の電子捕獲層は第2の半導体と互いに重なる領域を有し、第1のゲート電極および第2のゲート電極は、第1の配線が接続され、第1のソース電極は、第2の配線が接続され、第2のソース電極は、第3の配線が接続される半導体装置の作製方法であって、第1の配線に第1の電位を、第2の配線に第2の電位を、第3の配線に第3の電位を、それぞれ与えることで、第1の電子捕獲層と第2の電子捕獲層にそれぞれ異なる電荷量の電子を注入する半導体装置の作製方法である。
(7)本発明の一態様は、第1のトランジスタのしきい値電圧と、第2のトランジスタのしきい値電圧は、互いに異なる、(6)に記載の半導体装置の作成方法である。
(8)本発明の一態様は、第1の半導体と、第2の半導体は、同じ半導体を有する、(6)または(7)に記載の半導体装置の作製方法である。
(9)本発明の一態様は、第1の電子捕獲層と、第2の電子捕獲層は、同じ導電体、同じ半導体、または同じ絶縁体を有する、(6)乃至(8)のいずれか一に記載の半導体装置の作製方法である。
(10)本発明の一態様は、第1トランジスタのゲート絶縁体と、第2のトランジスタのゲート絶縁体は、同じ絶縁体を有する、(6)乃至(9)のいずれか一に記載の半導体装置の作製方法である。
本実施の形態では、半導体と電子捕獲層とゲート電極とを有する半導体装置の構成および動作原理、および、それを応用する回路について説明する。図1(A)は、半導体101と電子捕獲層102とゲート電極103とゲート絶縁体104とゲート電極105とを有する半導体装置である。
本実施の形態では、本発明の一態様のトランジスタの構造について図面を用いて説明する。
本実施の形態では、トランジスタのしきい値電圧を制御する方法について、図13を用いて説明する。図13(A)は、トランジスタ120およびトランジスタ140の回路図を示す。回路図中の点線は、電子捕獲層を表している。図13(B)は、トランジスタ120およびトランジスタ140の断面模式図である。
本実施の形態では、実施の形態2で説明した、図6のトランジスタの作製方法について、図14、図15、図16、および図17を用いて説明する。
本実施の形態では、酸化物半導体の構造について説明する。
まずは、CAAC−OSについて説明する。
次に、nc−OSについて説明する。
a−like OSは、nc−OSと非晶質酸化物半導体との間の構造を有する酸化物半導体である。
本実施の形態では、実施の形態1で説明したトランジスタを利用した半導体装置について一例を説明する。
<撮像装置>
以下では、本発明の一態様に係る撮像装置について説明する。
撮像装置200が有する1つの画素211を複数の副画素212で構成し、それぞれの副画素212に特定の波長帯域の光を透過するフィルタ(カラーフィルタ)を組み合わせることで、カラー画像表示を実現するための情報を取得することができる。
以下では、シリコンを用いたトランジスタと、本発明に係る酸化物半導体を用いたトランジスタと、を用いて画素を構成する一例について説明する。
以下では、本発明の一態様に係る表示装置について、図31および図32を用いて説明する。
本実施の形態では、上記実施の形態で例示したトランジスタ、または記憶装置を含むRFタグについて、図33を用いて説明する。
本実施の形態では、少なくとも実施の形態で説明したトランジスタを用いることができ、先の実施の形態で説明した記憶装置を含むCPUについて説明する。
本実施の形態では、本発明の一態様の表示パネルの構成例について説明する。
図36(A)は、本発明の一態様の表示パネルの上面図であり、図36(B)は、本発明の一態様の表示パネルの画素に液晶素子を適用する場合に用いることができる画素回路を説明するための回路図である。また、図36(C)は、本発明の一態様の表示パネルの画素に有機EL素子を適用する場合に用いることができる画素回路を説明するための回路図である。
また、画素の回路構成の一例を図36(B)に示す。ここでは、VA型液晶表示パネルの画素に適用することができる画素回路を示す。
画素の回路構成の他の一例を図36(C)に示す。ここでは、有機EL素子を用いた表示パネルの画素構造を示す。
本発明の一態様に係る半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図37に示す。
本実施の形態では、本発明の一態様に係るRFタグの使用例について図38を用いながら説明する。RFタグの用途は広範にわたるが、例えば、紙幣、硬貨、有価証券類、無記名債券類、証書類(運転免許証や住民票等、図38(A)参照)、記録媒体(DVDやビデオテープ等、図38(B)参照)、包装用容器類(包装紙やボトル等、図38(C)参照)、乗り物類(自転車等、図38(D)参照)、身の回り品(鞄や眼鏡等)、食品類、植物類、動物類、人体、衣類、生活用品類、薬品や薬剤を含む医療品、または電子機器(液晶表示装置、EL表示装置、テレビジョン装置、または携帯電話)等の物品、若しくは各物品に取り付ける荷札(図38(E)、図38(F)参照)等に設けて使用することができる。
102 電子捕獲層
102a 絶縁体
102b 絶縁体
102c 絶縁体
102d 導電体
102e 絶縁体
103 ゲート電極
104 ゲート絶縁体
105 ゲート電極
106 電子捕獲準位
107 電子
108 曲線
109 曲線
110 トランジスタ
111 容量素子
120 トランジスタ
140 トランジスタ
200 撮像装置
201 スイッチ
202 スイッチ
203 スイッチ
210 画素部
211 画素
212 副画素
212B 副画素
212G 副画素
212R 副画素
220 光電変換素子
230 画素回路
231 配線
247 配線
248 配線
249 配線
250 配線
253 配線
254 フィルタ
254B フィルタ
254G フィルタ
254R フィルタ
255 レンズ
256 光
257 配線
260 周辺回路
270 周辺回路
280 周辺回路
290 周辺回路
291 光源
300 トランジスタ
302 絶縁体
303 絶縁体
304 コンタクトホール
308 絶縁体
310 トランジスタ
315 容量素子
320 容量素子
330 ゲート電極
341 電極
342 電極
350 基板
351 STI
353 拡散層
354 絶縁体
355 サイドウォール
360 絶縁体
361 絶縁体
362 絶縁体
363 絶縁体
364 絶縁体
365 絶縁体
370 プラグ
371 プラグ
372 プラグ
373 配線層
374 配線層
375 配線層
376 配線層
377 配線層
378 配線層
379 配線層
380 配線層
381 配線層
382 プラグ
383 プラグ
384 プラグ
385 配線層
386 配線層
387 配線層
388 プラグ
389 プラグ
390 配線層
391 プラグ
392 プラグ
393 配線層
394 配線層
400 基板
401 画素部
402 走査線駆動回路
403 走査線駆動回路
404 信号線駆動回路
410 容量配線
412 ゲート配線
413 走査線
414 信号線
416 トランジスタ
417 トランジスタ
418 液晶素子
419 液晶素子
420 画素
421 スイッチング用トランジスタ
422 駆動用トランジスタ
423 容量素子
424 発光素子
425 信号線
426 走査線
427 電源線
428 共通電極
500 シリコン基板
510 層
520 層
530 層
540 層
551 トランジスタ
552 トランジスタ
553 トランジスタ
560 フォトダイオード
561 アノード
562 カソード
563 低抵抗領域
570 プラグ
571 配線
572 配線
573 配線
580 絶縁体
581 絶縁体
583 コンタクトホール
590 マクロレンズアレイ層
592 カラーフィルター層
594 遮光層
600 基板
601 基板
602 絶縁体
604 絶縁体
606 絶縁体
607 酸化物半導体
608 酸化物半導体
608a 酸化物半導体
608c 酸化物半導体
609 導電体
609a 酸化物半導体
609b 酸化物半導体
610a ソース電極
610b ドレイン電極
611a ソース電極
611b ドレイン電極
611c ソース電極
611d ドレイン電極
612 ゲート絶縁体
613 酸化物半導体
614 ゲート電極
616 絶縁体
617 絶縁体
618 絶縁体
619 薄膜
620 電子捕獲層
621 絶縁体
621a 電子捕獲層
621b 電子捕獲層
622 絶縁体
626 ゲート電極
627a ゲート電極
627b ゲート電極
650 チャネル形成領域
660 配線
670 配線
680 配線
700 基板
704a 導電体
704b 導電体
706 半導体
708 絶縁体
712a 絶縁体
714a 導電体
714b 導電体
716a 導電体
716b 導電体
718a 絶縁体
718b 絶縁体
718c 絶縁体
719 発光素子
720 絶縁体
721 絶縁体
722a 絶縁体
723a 絶縁体
724 絶縁体
725a 電子捕獲層
731 端子
732 FPC
733a 配線
734 シール材
735 駆動回路
736 駆動回路
737 画素
741 トランジスタ
742 容量素子
743 スイッチ素子
744 信号線
750 基板
751 トランジスタ
752 容量素子
753 液晶素子
754 走査線
755 信号線
781 導電体
782 発光層
783 導電体
784 隔壁
791 導電体
792 絶縁体
793 液晶層
794 絶縁体
795 スペーサ
796 導電体
797 基板
800 RFタグ
801 通信器
802 アンテナ
803 無線信号
804 アンテナ
805 整流回路
806 定電圧回路
807 復調回路
808 変調回路
809 論理回路
810 記憶回路
811 ROM
901 筐体
902 筐体
903 表示部
904 表示部
905 マイクロフォン
906 スピーカー
907 操作キー
908 スタイラス
911 筐体
912 筐体
913 表示部
914 表示部
915 接続部
916 操作キー
921 筐体
922 表示部
923 キーボード
924 ポインティングデバイス
931 筐体
932 冷蔵室用扉
933 冷凍室用扉
941 筐体
942 筐体
943 表示部
944 操作キー
945 レンズ
946 接続部
951 車体
952 車輪
953 ダッシュボード
954 ライト
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
1200 記憶回路
1201 回路
1202 回路
1203 スイッチ
1204 スイッチ
1206 論理素子
1207 容量素子
1208 容量素子
1209 トランジスタ
1210 トランジスタ
1213 トランジスタ
1214 トランジスタ
1220 回路
4000 RFタグ
5100 ペレット
5120 基板
5161 領域
Claims (2)
- チャネル形成領域を有する酸化物半導体と、
前記酸化物半導体の上面及び側面に接する第1の絶縁体と、
前記第1の絶縁体を介して前記チャネル形成領域と重なる領域を有する第1の導電体と、
前記第1の導電体の側面と接する第2の絶縁体と、
前記第2の絶縁体を間に挟んで前記第1の導電体の側面と向かい合うように配置された電子捕獲層と、を有し、
前記電子捕獲層は、前記第1の絶縁体の上面と接し、
前記電子捕獲層は、導電体であり、且つタンタル、タングステン、チタン、モリブデン、銅、またはモリブデンタングステン合金を含む半導体装置。 - チャネル形成領域を有する酸化物半導体と、
前記酸化物半導体の上面及び側面に接する第1の絶縁体と、
前記第1の絶縁体を介して前記チャネル形成領域と重なる領域を有する第1の導電体と、
前記第1の導電体の側面と接する第2の絶縁体と、
前記第2の絶縁体を間に挟んで前記第1の導電体の側面と向かい合うように配置された電子捕獲層と、を有し、
前記電子捕獲層は、前記第1の絶縁体の上面と接し、
前記電子捕獲層は、導電体であり、且つアルミニウムを含む半導体装置。
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