JP6709769B2 - 携帯型電子装置、画像撮影モジュール及び載置ユニット - Google Patents
携帯型電子装置、画像撮影モジュール及び載置ユニット Download PDFInfo
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- 238000001514 detection method Methods 0.000 claims description 47
- 239000004020 conductor Substances 0.000 claims description 22
- 230000017525 heat dissipation Effects 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Description
[第1の実施例]
[第2の実施例]
[第3の実施例]
[第4の実施例]
[第5の実施例]
[第6の実施例]
[第7の実施例]
[第8の実施例]
[実施例の効果]
S 載置ユニット
M 画像撮影モジュール
1 回路基板
100 貫通開口
101 上表面
1010 電子部品無し領域
102 下表面
103 接地領域
2 画像検知チップ
200 画像検知領域
3 電子部品
4 ディスペンスパッケージ
400 平坦面
40 周回延在部
5 レンズユニット
51 ホルダ構造
52 レンズ構造
6 光学フィルタユニット
7 導電体
700 下表面
8 放熱構造
9 囲み状位置制限フレーム
C1 電気コネクタ
C2 導電構造
H1、H2 厚さ
Claims (6)
- 上表面及び下表面を有する回路基板と、
前記回路基板に電気的に接続され、画像検知領域を有する画像検知チップと、
前記回路基板における一番下の底面となる前記下表面に設けられると共に前記回路基板に電気的に接続される少なくとも一つの電子部品と、
前記少なくとも一つの電子部品を被覆するように、前記回路基板における一番下の底面となる前記下表面に設けられるディスペンスパッケージと、
前記回路基板の上表面に設けられるホルダ構造と、前記ホルダ構造によって載置されると共に前記画像検知領域に対応するレンズ構造と、を備えるレンズユニットと、
を備え、
前記ディスペンスパッケージの側辺は、少なくとも1つの切断面を有し、
前記ディスペンスパッケージは、前記画像検知チップの下表面の一部分を被覆した周回延在部をさらに有し、前記周回延在部に被覆されない前記前記画像検知チップの下表面の他部分は露出されている、ことを特徴とする、画像撮影モジュール。 - 前記回路基板の前記下表面に設けられると共に前記回路基板に電気的に接続される少なくとも一つの導電体を更に備え、
前記少なくとも一つの導電体の一部が前記ディスペンスパッケージによって被覆されることで、前記少なくとも一つの導電体の下表面が前記ディスペンスパッケージの外部に露出し、
前記ディスペンスパッケージは前記少なくとも一つの導電体の前記下表面と面一する平坦面を有し、
前記ディスペンスパッケージは前記画像検知チップを取り囲み、
前記ディスペンスパッケージの厚さは前記画像検知チップの厚さよりも大きく、
前記回路基板の前記上表面には、前記ホルダ構造によって取り囲まれると共に他の電子部品によって占められていない電子部品無し領域を有し、
前記回路基板の側辺は、前記少なくとも1つの切断面と対応するように面一に形成される平面を有することを特徴とする、請求項1に記載の画像撮影モジュール。 - 放熱構造を更に備え、
前記放熱構造は前記ディスペンスパッケージの前記平坦面に設けられると共に前記少なくとも一つの導電体の前記下表面に接触し、
前記画像検知チップは、熱伝導性接着剤を介して前記放熱構造に貼り付けられ、
前記回路基板は、前記上表面と前記下表面との間に接続される貫通開口を有し、
前記画像検知チップは前記回路基板の前記下表面に設けられ、
前記画像検知チップの前記画像検知領域は前記貫通開口と対向し、
前記回路基板に外部の電子モジュールと電気的に接続するための電気コネクタを更に増設することを特徴とする、請求項2に記載の画像撮影モジュール。 - 画像撮影モジュールを備える携帯型電子装置であって、
前記画像撮影モジュールは、
上表面及び下表面を有する回路基板と、
前記回路基板に電気的に接続され、画像検知領域を有する画像検知チップと、
前記回路基板における一番下の底面となる前記下表面に設けられると共に前記回路基板に電気的に接続される少なくとも一つの電子部品と、
前記少なくとも一つの電子部品を被覆するように、前記回路基板における一番下の底面となる前記下表面に設けられるディスペンスパッケージと、
前記回路基板の上表面に設けられるホルダ構造と、前記ホルダ構造によって載置されると共に前記画像検知領域に対応するレンズ構造と、を備えるレンズユニットと、
を備え、
前記ディスペンスパッケージの側辺は、少なくとも1つの切断面を有し、
前記ディスペンスパッケージは、前記画像検知チップの下表面の一部分を被覆した周回延在部をさらに有し、前記周回延在部に被覆されない前記前記画像検知チップの下表面の他部分は露出されている、ことを特徴とする、携帯型電子装置。 - 前記画像撮影モジュールは、前記回路基板の前記下表面に設けられると共に前記回路基板に電気的に接続される少なくとも一つの導電体を更に備え、
前記少なくとも一つの導電体の一部が前記ディスペンスパッケージによって被覆されることで、前記少なくとも一つの導電体の前記下表面が前記ディスペンスパッケージの外部に露出し、
前記ディスペンスパッケージは前記少なくとも一つの導電体の前記下表面と面一する平坦面を有し、
前記ディスペンスパッケージは前記画像検知チップを取り囲み、
前記ディスペンスパッケージの厚さは前記画像検知チップの厚さよりも大きく、
前記回路基板の前記上表面には、前記ホルダ構造によって取り囲まれると共に他の電子部品によって占められていない電子部品無し領域を有し、
前記回路基板の側辺は、前記少なくとも1つの切断面と対応するように面一に形成される平面を有することを特徴とする、請求項4に記載の携帯型電子装置。 - 前記画像撮影モジュールは放熱構造を更に備え、
前記放熱構造は、前記ディスペンスパッケージの前記平坦面に設けられると共に前記少なくとも一つの導電体の前記下表面に接触し、
前記画像検知チップは、熱伝導性接着剤を介して前記放熱構造に貼り付けられ、
前記回路基板は、前記上表面と前記下表面との間に接続される貫通開口を有し、
前記画像検知チップは前記回路基板の前記下表面に設けられ、
前記画像検知チップの前記画像検知領域は前記貫通開口と対向し、
前記回路基板に外部の電子モジュールと電気的に接続するための電気コネクタを更に増設することを特徴とする、請求項5に記載の携帯型電子装置。
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WO2020134469A1 (zh) * | 2018-12-28 | 2020-07-02 | 宁波舜宇光电信息有限公司 | 镜头组件、感光组件和摄像模组及其组装方法 |
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US6943423B2 (en) * | 2003-10-01 | 2005-09-13 | Optopac, Inc. | Electronic package of photo-image sensors in cellular phone camera modules, and the fabrication and assembly thereof |
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US20200083396A1 (en) | 2020-03-12 |
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CN206947342U (zh) | 2018-01-30 |
US10818814B2 (en) | 2020-10-27 |
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