JP6702127B2 - 荷電粒子ビームの分解能測定方法及び荷電粒子ビーム描画装置 - Google Patents

荷電粒子ビームの分解能測定方法及び荷電粒子ビーム描画装置 Download PDF

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Publication number
JP6702127B2
JP6702127B2 JP2016201835A JP2016201835A JP6702127B2 JP 6702127 B2 JP6702127 B2 JP 6702127B2 JP 2016201835 A JP2016201835 A JP 2016201835A JP 2016201835 A JP2016201835 A JP 2016201835A JP 6702127 B2 JP6702127 B2 JP 6702127B2
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Japan
Prior art keywords
charged particle
particle beam
resolution
mark
scattered
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JP2016201835A
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English (en)
Japanese (ja)
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JP2018026515A (ja
Inventor
幸毅 清水
幸毅 清水
研司 大歳
研司 大歳
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Nuflare Technology Inc
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Nuflare Technology Inc
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Priority to TW106122415A priority Critical patent/TWI654421B/zh
Priority to US15/662,495 priority patent/US10211027B2/en
Priority to KR1020170096889A priority patent/KR101928394B1/ko
Publication of JP2018026515A publication Critical patent/JP2018026515A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G03F1/86—Inspecting by charged particle beam [CPB]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
JP2016201835A 2016-08-03 2016-10-13 荷電粒子ビームの分解能測定方法及び荷電粒子ビーム描画装置 Active JP6702127B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW106122415A TWI654421B (zh) 2016-08-03 2017-07-04 帶電粒子束的解析度測定方法及帶電粒子束描繪裝置
US15/662,495 US10211027B2 (en) 2016-08-03 2017-07-28 Method for measuring resolution of charged particle beam and charged particle beam drawing apparatus
KR1020170096889A KR101928394B1 (ko) 2016-08-03 2017-07-31 하전 입자빔의 분해능 측정 방법 및 하전 입자빔 묘화 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016152946 2016-08-03
JP2016152946 2016-08-03

Publications (2)

Publication Number Publication Date
JP2018026515A JP2018026515A (ja) 2018-02-15
JP6702127B2 true JP6702127B2 (ja) 2020-05-27

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JP2016201835A Active JP6702127B2 (ja) 2016-08-03 2016-10-13 荷電粒子ビームの分解能測定方法及び荷電粒子ビーム描画装置

Country Status (3)

Country Link
JP (1) JP6702127B2 (zh)
KR (1) KR101928394B1 (zh)
TW (1) TWI654421B (zh)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09293477A (ja) * 1996-04-26 1997-11-11 Toshiba Corp 荷電ビームの調整方法
JP4698799B2 (ja) * 2000-06-23 2011-06-08 有限会社タイガー恒産 回転抑制機能付金属板折曲装置
JP2007188671A (ja) * 2006-01-11 2007-07-26 Nuflare Technology Inc 荷電粒子ビームのビーム強度分布測定方法及び荷電粒子ビームのビーム分解能測定方法
JP2008021435A (ja) 2006-07-11 2008-01-31 Nuflare Technology Inc 荷電粒子ビームのビーム分解能測定方法及び荷電粒子ビーム装置
JP2011501258A (ja) * 2007-10-10 2011-01-06 アイティーアイ・スコットランド・リミテッド 情報抽出装置および方法
JP5798424B2 (ja) * 2010-12-07 2015-10-21 日本電子株式会社 荷電粒子ビームの軸合わせ方法および荷電粒子ビーム装置

Also Published As

Publication number Publication date
TWI654421B (zh) 2019-03-21
KR20180015584A (ko) 2018-02-13
TW201816387A (zh) 2018-05-01
JP2018026515A (ja) 2018-02-15
KR101928394B1 (ko) 2018-12-12

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