JP2018026515A - 荷電粒子ビームの分解能測定方法及び荷電粒子ビーム描画装置 - Google Patents
荷電粒子ビームの分解能測定方法及び荷電粒子ビーム描画装置 Download PDFInfo
- Publication number
- JP2018026515A JP2018026515A JP2016201835A JP2016201835A JP2018026515A JP 2018026515 A JP2018026515 A JP 2018026515A JP 2016201835 A JP2016201835 A JP 2016201835A JP 2016201835 A JP2016201835 A JP 2016201835A JP 2018026515 A JP2018026515 A JP 2018026515A
- Authority
- JP
- Japan
- Prior art keywords
- charged particle
- particle beam
- resolution
- mark
- focus position
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000009826 distribution Methods 0.000 claims abstract description 42
- 238000004364 calculation method Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000001514 detection method Methods 0.000 claims abstract description 8
- 230000006866 deterioration Effects 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 description 38
- 238000005259 measurement Methods 0.000 description 14
- 238000007493 shaping process Methods 0.000 description 12
- 230000007423 decrease Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229930091051 Arenine Natural products 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002945 steepest descent method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
- G03F1/86—Inspecting by charged particle beam [CPB]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Sources, Ion Sources (AREA)
- Electron Beam Exposure (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Abstract
Description
10 制御部
12 制御計算機
14 制御回路
30 描画部
40 電子鏡筒
50 描画室
54 検出器
60 基板
62 ドットマーク
Claims (10)
- 荷電粒子ビームのフォーカス位置を高さ方向に変え、前記フォーカス位置毎に、基板上に形成されたドットマークを前記荷電粒子ビームで走査する工程と、
前記フォーカス位置毎に、前記ドットマークから反射した反射荷電粒子を検出する工程と、
前記反射荷電粒子の検出結果から、散乱荷電粒子分布を前記フォーカス位置に対応する高さ毎に演算する工程と、
前記荷電粒子ビームの開き角及び分解能をパラメータとして含む前記荷電粒子ビームのビーム波形の近似式と前記ドットマークのマーク形状との畳み込み演算を行う工程と、
前記高さ毎の散乱荷電粒子分布と前記畳み込み演算の演算結果とをフィッティングし、前記開き角及び分解能を算出する工程と、
を備える荷電粒子ビームの分解能測定方法。 - 前記マーク形状は、高さ、幅、劣化度合い、及び位置をパラメータとして含む近似式で表されることを特徴とする請求項1に記載の荷電粒子ビームの分解能測定方法。
- 前記劣化度合いは前記ドットマークのエッジの曲率半径であることを特徴とする請求項2に記載の荷電粒子ビームの分解能測定方法。
- 前記基板上には複数のドットマークが形成されており、前記フォーカス位置毎に各ドットマークを荷電粒子ビームで走査し、反射荷電粒子の検出結果から散乱荷電粒子分布を演算することを特徴とする請求項1乃至3のいずれかに記載の荷電粒子ビームの分解能測定方法。
- 前記荷電粒子ビームのビーム波形の近似式は、高さ方向における前記荷電粒子ビームの大きさの変化をパラメータとして含むことを特徴とする請求項1乃至4のいずれかに記載の荷電粒子ビームの分解能測定方法。
- 前記散乱荷電粒子分布の微分と前記畳み込み演算の演算結果の微分とをフィッティングし、前記開き角及び分解能を算出することを特徴とする請求項1乃至5のいずれかに記載の荷電粒子ビームの分解能測定方法。
- 荷電粒子ビームのフォーカス位置を高さ方向に変え、前記フォーカス位置毎に、基板上に形成されたドットマークを前記荷電粒子ビームで走査する描画部と、
前記フォーカス位置に対応する高さ毎に、前記ドットマークから反射した荷電粒子の検出結果から散乱荷電粒子分布を演算し、前記荷電粒子ビームの開き角及び分解能をパラメータとして含む前記荷電粒子ビームのビーム波形の近似式と前記ドットマークのマーク形状との畳み込み演算を行い、前記高さ毎の散乱荷電粒子分布と前記畳み込み演算の演算結果とをフィッティングし、前記開き角及び分解能を算出する制御計算機と、
を備える荷電粒子ビーム描画装置。 - 前記マーク形状は、高さ、幅、劣化度合い、及び位置をパラメータとして含む近似式で表されることを特徴とする請求項7に記載の荷電粒子ビーム描画装置。
- 前記基板上には複数のドットマークが形成されており、前記描画部は、前記フォーカス位置毎に各ドットマークを荷電粒子ビームで走査することを特徴とする請求項7又は8に記載の荷電粒子ビーム描画装置。
- 前記荷電粒子ビームのビーム波形の近似式は、高さ方向における前記荷電粒子ビームの大きさの変化をパラメータとして含むことを特徴とする請求項7乃至9のいずれかに記載の荷電粒子ビーム描画装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW106122415A TWI654421B (zh) | 2016-08-03 | 2017-07-04 | 帶電粒子束的解析度測定方法及帶電粒子束描繪裝置 |
US15/662,495 US10211027B2 (en) | 2016-08-03 | 2017-07-28 | Method for measuring resolution of charged particle beam and charged particle beam drawing apparatus |
KR1020170096889A KR101928394B1 (ko) | 2016-08-03 | 2017-07-31 | 하전 입자빔의 분해능 측정 방법 및 하전 입자빔 묘화 장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016152946 | 2016-08-03 | ||
JP2016152946 | 2016-08-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018026515A true JP2018026515A (ja) | 2018-02-15 |
JP6702127B2 JP6702127B2 (ja) | 2020-05-27 |
Family
ID=61194836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016201835A Active JP6702127B2 (ja) | 2016-08-03 | 2016-10-13 | 荷電粒子ビームの分解能測定方法及び荷電粒子ビーム描画装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6702127B2 (ja) |
KR (1) | KR101928394B1 (ja) |
TW (1) | TWI654421B (ja) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09293477A (ja) * | 1996-04-26 | 1997-11-11 | Toshiba Corp | 荷電ビームの調整方法 |
JP4698799B2 (ja) * | 2000-06-23 | 2011-06-08 | 有限会社タイガー恒産 | 回転抑制機能付金属板折曲装置 |
JP2007188671A (ja) * | 2006-01-11 | 2007-07-26 | Nuflare Technology Inc | 荷電粒子ビームのビーム強度分布測定方法及び荷電粒子ビームのビーム分解能測定方法 |
JP2008021435A (ja) | 2006-07-11 | 2008-01-31 | Nuflare Technology Inc | 荷電粒子ビームのビーム分解能測定方法及び荷電粒子ビーム装置 |
US8495042B2 (en) * | 2007-10-10 | 2013-07-23 | Iti Scotland Limited | Information extraction apparatus and methods |
JP5798424B2 (ja) * | 2010-12-07 | 2015-10-21 | 日本電子株式会社 | 荷電粒子ビームの軸合わせ方法および荷電粒子ビーム装置 |
-
2016
- 2016-10-13 JP JP2016201835A patent/JP6702127B2/ja active Active
-
2017
- 2017-07-04 TW TW106122415A patent/TWI654421B/zh active
- 2017-07-31 KR KR1020170096889A patent/KR101928394B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
TW201816387A (zh) | 2018-05-01 |
KR101928394B1 (ko) | 2018-12-12 |
KR20180015584A (ko) | 2018-02-13 |
JP6702127B2 (ja) | 2020-05-27 |
TWI654421B (zh) | 2019-03-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI464773B (zh) | Charged particle beam mapping device | |
JP5616674B2 (ja) | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 | |
TW201923815A (zh) | 多帶電粒子束描繪裝置及多帶電粒子束描繪方法 | |
KR20160038779A (ko) | 가속 전압 드리프트의 보정 방법, 하전 입자빔의 드리프트 보정 방법, 및 하전 입자빔 묘화 장치 | |
JP2020174143A (ja) | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 | |
JP2013038297A (ja) | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 | |
JP6791051B2 (ja) | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 | |
KR102221957B1 (ko) | 하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법 | |
US9812284B2 (en) | Charged particle beam drawing apparatus and charged particle beam drawing method | |
KR102219532B1 (ko) | 하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법 | |
TW201717243A (zh) | 帶電粒子束描繪裝置的調整方法及帶電粒子束描繪方法 | |
US10211027B2 (en) | Method for measuring resolution of charged particle beam and charged particle beam drawing apparatus | |
JP5123754B2 (ja) | 描画装置及び荷電粒子ビームの焦点合わせ方法 | |
JP6702127B2 (ja) | 荷電粒子ビームの分解能測定方法及び荷電粒子ビーム描画装置 | |
JPH04269613A (ja) | 荷電ビームの焦点合わせ方法 | |
JP7484491B2 (ja) | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 | |
JP2012023279A (ja) | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 | |
JPH05259041A (ja) | 電子ビーム描画方法 | |
JP2011066249A (ja) | 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190408 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200122 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200128 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200324 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200407 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200420 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6702127 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |