JP6702127B2 - 荷電粒子ビームの分解能測定方法及び荷電粒子ビーム描画装置 - Google Patents

荷電粒子ビームの分解能測定方法及び荷電粒子ビーム描画装置 Download PDF

Info

Publication number
JP6702127B2
JP6702127B2 JP2016201835A JP2016201835A JP6702127B2 JP 6702127 B2 JP6702127 B2 JP 6702127B2 JP 2016201835 A JP2016201835 A JP 2016201835A JP 2016201835 A JP2016201835 A JP 2016201835A JP 6702127 B2 JP6702127 B2 JP 6702127B2
Authority
JP
Japan
Prior art keywords
charged particle
particle beam
resolution
mark
scattered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016201835A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018026515A (ja
Inventor
幸毅 清水
幸毅 清水
研司 大歳
研司 大歳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuflare Technology Inc
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Priority to TW106122415A priority Critical patent/TWI654421B/zh
Priority to US15/662,495 priority patent/US10211027B2/en
Priority to KR1020170096889A priority patent/KR101928394B1/ko
Publication of JP2018026515A publication Critical patent/JP2018026515A/ja
Application granted granted Critical
Publication of JP6702127B2 publication Critical patent/JP6702127B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G03F1/86—Inspecting by charged particle beam [CPB]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electron Beam Exposure (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
JP2016201835A 2016-08-03 2016-10-13 荷電粒子ビームの分解能測定方法及び荷電粒子ビーム描画装置 Active JP6702127B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW106122415A TWI654421B (zh) 2016-08-03 2017-07-04 帶電粒子束的解析度測定方法及帶電粒子束描繪裝置
US15/662,495 US10211027B2 (en) 2016-08-03 2017-07-28 Method for measuring resolution of charged particle beam and charged particle beam drawing apparatus
KR1020170096889A KR101928394B1 (ko) 2016-08-03 2017-07-31 하전 입자빔의 분해능 측정 방법 및 하전 입자빔 묘화 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016152946 2016-08-03
JP2016152946 2016-08-03

Publications (2)

Publication Number Publication Date
JP2018026515A JP2018026515A (ja) 2018-02-15
JP6702127B2 true JP6702127B2 (ja) 2020-05-27

Family

ID=61194836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016201835A Active JP6702127B2 (ja) 2016-08-03 2016-10-13 荷電粒子ビームの分解能測定方法及び荷電粒子ビーム描画装置

Country Status (3)

Country Link
JP (1) JP6702127B2 (ko)
KR (1) KR101928394B1 (ko)
TW (1) TWI654421B (ko)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09293477A (ja) * 1996-04-26 1997-11-11 Toshiba Corp 荷電ビームの調整方法
JP4698799B2 (ja) * 2000-06-23 2011-06-08 有限会社タイガー恒産 回転抑制機能付金属板折曲装置
JP2007188671A (ja) 2006-01-11 2007-07-26 Nuflare Technology Inc 荷電粒子ビームのビーム強度分布測定方法及び荷電粒子ビームのビーム分解能測定方法
JP2008021435A (ja) 2006-07-11 2008-01-31 Nuflare Technology Inc 荷電粒子ビームのビーム分解能測定方法及び荷電粒子ビーム装置
WO2009047570A1 (en) 2007-10-10 2009-04-16 Iti Scotland Limited Information extraction apparatus and methods
JP5798424B2 (ja) * 2010-12-07 2015-10-21 日本電子株式会社 荷電粒子ビームの軸合わせ方法および荷電粒子ビーム装置

Also Published As

Publication number Publication date
KR101928394B1 (ko) 2018-12-12
TWI654421B (zh) 2019-03-21
JP2018026515A (ja) 2018-02-15
TW201816387A (zh) 2018-05-01
KR20180015584A (ko) 2018-02-13

Similar Documents

Publication Publication Date Title
KR101476390B1 (ko) 멀티 하전 입자빔 묘화 방법 및 멀티 하전 입자빔 묘화 장치
JP5616674B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
TWI464773B (zh) Charged particle beam mapping device
JP6791051B2 (ja) マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
TW201923815A (zh) 多帶電粒子束描繪裝置及多帶電粒子束描繪方法
KR20160038779A (ko) 가속 전압 드리프트의 보정 방법, 하전 입자빔의 드리프트 보정 방법, 및 하전 입자빔 묘화 장치
JP2010192538A (ja) 荷電粒子ビーム描画方法および荷電粒子ビーム描画装置
US8008631B2 (en) Method of acquiring offset deflection amount for shaped beam and lithography apparatus
KR102221957B1 (ko) 하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법
JP2013038297A (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US9812284B2 (en) Charged particle beam drawing apparatus and charged particle beam drawing method
TWI697744B (zh) 帶電粒子束描繪裝置及帶電粒子束描繪方法
JP5461878B2 (ja) ドリフト測定方法、荷電粒子ビーム描画方法および荷電粒子ビーム描画装置
US10211027B2 (en) Method for measuring resolution of charged particle beam and charged particle beam drawing apparatus
JP6702127B2 (ja) 荷電粒子ビームの分解能測定方法及び荷電粒子ビーム描画装置
JP5123754B2 (ja) 描画装置及び荷電粒子ビームの焦点合わせ方法
JPH04269613A (ja) 荷電ビームの焦点合わせ方法
JP5758325B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP7484491B2 (ja) 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP2017228650A (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2017032733A (ja) 半導体デバイスの評価条件設定方法、及び評価条件設定装置
JP2023132765A (ja) 荷電粒子ビーム描画方法、荷電粒子ビーム描画装置及びプログラム

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190408

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200128

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200324

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200407

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200420

R150 Certificate of patent or registration of utility model

Ref document number: 6702127

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250