JP6700230B2 - 半導体構造およびそれを製造する方法 - Google Patents
半導体構造およびそれを製造する方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 250
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 215
- 238000000034 method Methods 0.000 claims description 29
- 230000005855 radiation Effects 0.000 claims description 24
- 239000011229 interlayer Substances 0.000 claims description 10
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- 238000005530 etching Methods 0.000 claims description 9
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- 230000008569 process Effects 0.000 description 19
- 230000005670 electromagnetic radiation Effects 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- 239000011521 glass Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
本出願は、「Semiconductor Structure and Manufacturing Method Thereof」という発明の名称の2015年1月9日に出願された米国仮特許出願第62/101,597号の利益を主張し、その開示は全体が参照により本明細書に組み込まれる。
Claims (7)
- 第1の面および前記第1の面に対向する第2の面を備える半導体基板と、
前記半導体基板に配置される放射線検知デバイスと、
前記半導体基板の前記第1の面の上に配置される層間絶縁膜(ILD)と、
前記ILD内で伸びるビアと、
前記ILDの上に配置される相互接続構造と、
前記半導体基板と前記ビアの内部に配置される導電パッドと、
前記ILDの上に配置され、前記半導体基板の前記第1の面と隣接するシャロートレンチアイソレーション(STI)と、を備え、
前記ビア内に配置される前記導電パッドの幅は、前記ビアの幅と実質的に等しく、前記導電パッドは、前記第1の面と前記第2の面の間に配置され、前記半導体基板に囲まれる表面を備え、
前記導電パッドは、前記ビアに沿って延び、前記ビア内に配置され、前記STIの一部は前記ILDの一部と前記導電パッドとの間に配置される、半導体構造。 - 前記ビアの幅は前記導電パッドの表面の幅より実質的に狭いか、または等しい、請求項1に記載の半導体構造。
- 前記半導体基板に配置され、前記半導体基板の前記第2の面から前記第1の面に対して延びる凹部をさらに備え、前記凹部の幅は、前記凹部内に配置される前記導電パッドの幅より実質的に広いか、または等しい、請求項1または2に記載の半導体構造。
- 前記半導体基板においては、前記導電パッドの表面が欠けている、請求項1〜3のいずれか一項に記載の半導体構造。
- 前記導電パッドは前記半導体基板と前記ILDに囲まれる、請求項1〜4のいずれか一項に記載の半導体構造。
- 半導体構造を製造する方法であって、
第1の面と、前記第1の面に対向する第2の面と、半導体基板に形成される複数の放射線検知デバイスとを備える半導体基板を受け取るステップと、
前記半導体基板の前記第1の面の上に層間絶縁膜(ILD)を配置するステップと、
前記ILDの上に前記半導体基板の前記第1の面と隣接して配置されたシャロートレンチアイソレーション(STI)を配置するステップと、
前記ILDの上に相互接続構造を配置するステップと、
前記ILD内で伸びるビアを形成するために前記半導体基板の一部および前記ILDの一部を除去するステップと、
前記半導体基板と前記ビアとの内部に導電パッドを形成するステップと、
を含み、
前記ビア内に配置される前記導電パッドの幅は、前記ビアの幅と実質的に等しく、前記導電パッドは、前記第1の面と前記第2の面の間に配置され、前記半導体基板に囲まれる表面を備え、
前記導電パッドは、前記ビアに沿って延び、前記ビア内に配置され、前記STIの一部は前記ILDの一部と前記導電パッドとの間に配置される、方法。 - 前記半導体基板の一部および前記ILDの一部を除去するステップは、前記半導体基板の前記第2の面から前記第1の面に対して延びる、凹部を形成させるステップ、または前記半導体基板の前記第2の面の上の前記導電パッドの位置に従ってパターニングされるフォトマスクを配置するステップ、または前記半導体基板の前記第2の面の上にパターニングされたマスクを配置し、前記半導体基板の一部もしくは前記ILDの一部をエッチングするステップを含む、請求項6に記載の方法。
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US201562101597P | 2015-01-09 | 2015-01-09 | |
US62/101,597 | 2015-01-09 | ||
US14/642,344 | 2015-03-09 | ||
US14/642,344 US9748301B2 (en) | 2015-01-09 | 2015-03-09 | Semiconductor structure and manufacturing method thereof |
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US20200303435A1 (en) | 2020-09-24 |
TW201626502A (zh) | 2016-07-16 |
US20160204146A1 (en) | 2016-07-14 |
US10686005B2 (en) | 2020-06-16 |
US20190165011A1 (en) | 2019-05-30 |
JP2018022905A (ja) | 2018-02-08 |
KR101763017B1 (ko) | 2017-07-28 |
TWI591763B (zh) | 2017-07-11 |
US10177189B2 (en) | 2019-01-08 |
US11018179B2 (en) | 2021-05-25 |
KR20160086245A (ko) | 2016-07-19 |
US20180294295A1 (en) | 2018-10-11 |
US10204956B2 (en) | 2019-02-12 |
US9748301B2 (en) | 2017-08-29 |
JP2016129216A (ja) | 2016-07-14 |
US20170309659A1 (en) | 2017-10-26 |
CN105789228A (zh) | 2016-07-20 |
CN105789228B (zh) | 2020-01-14 |
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