JP6688890B2 - 複合材料多層構造を作製する方法 - Google Patents
複合材料多層構造を作製する方法 Download PDFInfo
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- JP6688890B2 JP6688890B2 JP2018530952A JP2018530952A JP6688890B2 JP 6688890 B2 JP6688890 B2 JP 6688890B2 JP 2018530952 A JP2018530952 A JP 2018530952A JP 2018530952 A JP2018530952 A JP 2018530952A JP 6688890 B2 JP6688890 B2 JP 6688890B2
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- polycyclic aromatic
- graphitic carbon
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- multilayer structure
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Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/20—Graphite
- C01B32/205—Preparation
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
- B28B1/00—Producing shaped prefabricated articles from the material
- B28B1/30—Producing shaped prefabricated articles from the material by applying the material on to a core or other moulding surface to form a layer thereon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
- B28B11/00—Apparatus or processes for treating or working the shaped or preshaped articles
- B28B11/24—Apparatus or processes for treating or working the shaped or preshaped articles for curing, setting or hardening
- B28B11/243—Setting, e.g. drying, dehydrating or firing ceramic articles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/198—Graphene oxide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/20—Graphite
- C01B32/21—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
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Description
金属酸化物/黒鉛状炭素前駆体材料を次のように調製した。テトラブトキシハフニウム(100g、Gelest,Inc.から入手可能)をフラスコに添加した。激しく撹拌しながら、ペンタン−2,4−ジオン(42.5g)をフラスコに6時間の期間にわたってゆっくりと添加した。フラスコ内容物をフラスコ中で一晩室温にて撹拌したまま放置した。反応中に生成されたN−ブタノールを真空下で除去した。次いで、800mLの酢酸エチルをフラスコに、室温で撹拌しながら30分間の期間にわたって添加した。フラスコの内容物を次いで微細フリットに通して濾過して、いずれの不溶性材料も除去した。残った溶媒を濾液から真空下で除去して、淡白色の固体を得た(100.4g)。淡白色の固体(100.4g)、酢酸エチル(500mL)及びジエチレングリコール(19.4g)を次いで、還流冷却器、撹拌子及び熱計量器を装着したフラスコに添加した。フラスコ内容物を次いで80℃で24時間還流させた。フラスコ内容物を次いで微細フリットに通して濾過し、真空下で乾燥させて、茶色がかった白色の固体を得た。茶色がかった白色の固体を次いでヘプタン(3×1L)で洗浄し、次いで高真空下で2時間乾燥させて、次の化学構造を有する金属酸化物/黒鉛状炭素前駆体材料生成物固体を得た。
実施例1からの金属酸化物/黒鉛状炭素前駆体材料生成物固体の一部分(0.7448g)を乳酸エチルに溶解させて、15.8729gの総重量を有するコーティング組成物を形成して、4.7重量%の金属酸化物/黒鉛状炭素前駆体材料を含むコーティング組成物を得た。
実施例1からの金属酸化物/黒鉛状炭素前駆体材料生成物固体の一部分(0.8077g)を乳酸エチルに溶解させて、16.2832gの総重量を有する組成物を形成した。2−ナフトエ酸(0.1024g)を次いで組成物に添加して、5.0重量%の金属酸化物/黒鉛状炭素前駆体材料及び0.63重量%の2−ナフトエ酸を含むコーティング組成物を得た。
実施例1からの金属酸化物/黒鉛状炭素前駆体材料生成物固体の一部分(0.7263g)を乳酸エチルに溶解させて、10.4024gの総重量を有する組成物を形成した。2−ナフトール(0.0472g)を次いで組成物に添加して、7.0重量%の金属酸化物/黒鉛状炭素前駆体材料及び0.45重量%の2−ナフトールを含むコーティング組成物を得た。
比較例C1ならびに実施例2及び3の各々により調製したコーティング組成物を、0.2μm PTFEシリンジフィルターに通して4回濾過してから、別個の8インチベアシリコンウエハ上に1,500rpmでスピンコーティングし、次いで100℃で60秒間バッキングした。コーティング済み酸化ケイ素ウエハを次いで、1.5インチ×1.5インチ試験片へと切り裂いた。試験片を次いでアニーリング真空オーブン中に配置した。ウエハ試験片を次いで、フォーミングガス(N2中5体積%H2)の減圧下、900℃で20分間、次の温度傾斜プロファイルを用いてアニールした。
ランプアップ:176分間にわたって室温から900℃まで
ソーク:900℃で20分間維持
ランプダウン:176分間よりも若干長くにわたって900℃から室温まで。
Claims (10)
- 多層構造を作製する方法であって、
基板を用意することと、
液体キャリアと、
0.1〜25重量%の多環式芳香族添加剤であって、前記多環式芳香族添加剤は、少なくとも1つの官能性部分が結合したC10−60多環式芳香族化合物からなる群から選択され、前記少なくとも1つの官能性部分は、ヒドロキシル基(−OH)、カルボキシラート基(−C(O)OH)、−OR3基及び−C(O)R3基からなる群から選択され、R3は、−C1−20直鎖または分岐鎖、置換または非置換アルキル基である、多環式芳香族添加剤と、
式(I)を有する2〜25重量%のMX/黒鉛状炭素前駆体材料と、を含み、
前記コーティング組成物を前記基板上に配設して、複合材料を形成することと、
前記複合材料をフォーミングガス雰囲気下でアニールすることと、を含み、
それによって、前記複合材料が、前記基板上に配設されたMX層及び黒鉛状炭素層に変換されて、前記多層構造を提供し、前記MX層が、前記多層構造において前記基板及び前記黒鉛状炭素層との間に挿入される、方法。 - Mは、Hf及びZrからなる群から選択され、zは、0であり、nは、1〜5であり、各Xは、Oである、請求項1に記載の方法。
- 前記多環式芳香族添加剤は、少なくとも1つの官能性部分が結合したC14−40多環式芳香族化合物からなる群から選択され、前記少なくとも1つの官能性部分は、ヒドロキシル基(−OH)、カルボキシラート基(−C(O)OH)、−OR3基、及び−C(O)R3基からなる群から選択され、R3は、−C1−20直鎖または分岐鎖、置換または非置換アルキル基である、請求項2に記載の方法。
- 前記少なくとも1つの官能性部分は、ヒドロキシル基(−OH)及びカルボキシラート基(−C(O)OH)からなる群から選択される、請求項2に記載の方法。
- 前記MX/黒鉛状炭素前駆体材料中の前記R2基の30〜75mol%は、−C(O)−C10−60多環式芳香族基である、請求項2に記載の方法。
- Mは、Zrであり、前記多環式芳香族添加剤は、少なくとも1つの官能性部分が結合したC14−40多環式芳香族化合物からなる群から選択され、前記少なくとも1つの官能性部分は、ヒドロキシル基(−OH)、カルボキシラート基(−C(O)OH)、−OR3基、及び−C(O)R3基からなる群から選択され、R3は、−C1−20直鎖または分岐鎖、置換または非置換アルキル基である、請求項2に記載の方法。
- 前記少なくとも1つの官能性部分は、ヒドロキシル基(−OH)及びカルボキシラート基(−C(O)OH)からなる群から選択される、請求項6に記載の方法。
- Mは、Zrであり、前記MX/黒鉛状炭素前駆体材料中の前記R2基の少なくとも30〜75mol%は、−C(O)−C10−60多環式芳香族基である、請求項2に記載の方法。
- 前記多層構造を酸に曝露して、自立黒鉛状炭素層を得ることと、前記黒鉛状炭素層を回収することとをさらに含む、請求項2に記載の方法。
- 請求項1に記載の方法により作製された多層構造を含む、電子デバイスを製造する方法。
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