JP6684661B2 - 半導体装置および電子機器 - Google Patents

半導体装置および電子機器 Download PDF

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Publication number
JP6684661B2
JP6684661B2 JP2016118083A JP2016118083A JP6684661B2 JP 6684661 B2 JP6684661 B2 JP 6684661B2 JP 2016118083 A JP2016118083 A JP 2016118083A JP 2016118083 A JP2016118083 A JP 2016118083A JP 6684661 B2 JP6684661 B2 JP 6684661B2
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Japan
Prior art keywords
transistor
electrode
node
semiconductor
switch
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JP2016118083A
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Japanese (ja)
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JP2017017683A (ja
JP2017017683A5 (enExample
Inventor
雅史 藤田
雅史 藤田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to US15/189,123 priority Critical patent/US10290573B2/en
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Publication of JP2017017683A5 publication Critical patent/JP2017017683A5/ja
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  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
  • Analogue/Digital Conversion (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2016118083A 2015-07-02 2016-06-14 半導体装置および電子機器 Expired - Fee Related JP6684661B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/189,123 US10290573B2 (en) 2015-07-02 2016-06-22 Semiconductor device and electronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015133572 2015-07-02
JP2015133572 2015-07-02

Related Child Applications (1)

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JP2020060123A Division JP2020115659A (ja) 2015-07-02 2020-03-30 半導体装置

Publications (3)

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JP2017017683A JP2017017683A (ja) 2017-01-19
JP2017017683A5 JP2017017683A5 (enExample) 2019-07-18
JP6684661B2 true JP6684661B2 (ja) 2020-04-22

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Family Applications (2)

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JP2016118083A Expired - Fee Related JP6684661B2 (ja) 2015-07-02 2016-06-14 半導体装置および電子機器
JP2020060123A Withdrawn JP2020115659A (ja) 2015-07-02 2020-03-30 半導体装置

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JP2020060123A Withdrawn JP2020115659A (ja) 2015-07-02 2020-03-30 半導体装置

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JP (2) JP6684661B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110383436A (zh) * 2017-03-13 2019-10-25 株式会社半导体能源研究所 复合氧化物及晶体管
JP7610936B2 (ja) 2020-08-07 2025-01-09 株式会社ジャパンディスプレイ 表示装置
US12250833B2 (en) 2021-12-27 2025-03-11 Nanya Technology Corporation Method for manufacturing semiconductor device structure
US11646353B1 (en) * 2021-12-27 2023-05-09 Nanya Technology Corporation Semiconductor device structure

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63179624A (ja) * 1987-01-21 1988-07-23 Hitachi Ltd Ｄ／ａ変換器
US4972188A (en) * 1989-09-15 1990-11-20 International Business Machines Corporation Push pull double digital-to-analog converter
JPH11136132A (ja) * 1997-10-30 1999-05-21 New Japan Radio Co Ltd １ビットｄ／ａ変換器
JP3494366B2 (ja) * 2000-08-04 2004-02-09 松下電器産業株式会社 Ｄａ変換器
JP2012060618A (ja) * 2010-09-13 2012-03-22 Renesas Electronics Corp 半導体集積回路装置
US9450600B2 (en) * 2013-03-28 2016-09-20 Asahi Kasei Microdevices Corporation Digital-analog converter and digital-analog conversion device executing digital-analog conversion after delta sigma
JP2016063374A (ja) * 2014-09-17 2016-04-25 キヤノン株式会社 信号処理装置およびその制御方法

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JP2017017683A (ja) 2017-01-19
JP2020115659A (ja) 2020-07-30

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