JP6666897B2 - 堆積前の測定を伴う研磨 - Google Patents

堆積前の測定を伴う研磨 Download PDF

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Publication number
JP6666897B2
JP6666897B2 JP2017502123A JP2017502123A JP6666897B2 JP 6666897 B2 JP6666897 B2 JP 6666897B2 JP 2017502123 A JP2017502123 A JP 2017502123A JP 2017502123 A JP2017502123 A JP 2017502123A JP 6666897 B2 JP6666897 B2 JP 6666897B2
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Japan
Prior art keywords
substrate
layer
measurements
measurement
polishing
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JP2017502123A
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English (en)
Japanese (ja)
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JP2017521866A (ja
JP2017521866A5 (https=
Inventor
知彦 北島
知彦 北島
ジェフリー ドリュー デーヴィッド，
ジェフリー ドリュー デーヴィッド，
チュン チエン，
チュン チエン，
健人 関根
健人 関根
ガーレン シー． ラング，
ガーレン シー． ラング，
シドニー ピー． ヒューイ，
シドニー ピー． ヒューイ，
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Priority claimed from US14/333,395 external-priority patent/US9811077B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2017521866A publication Critical patent/JP2017521866A/ja
Publication of JP2017521866A5 publication Critical patent/JP2017521866A5/ja
Application granted granted Critical
Publication of JP6666897B2 publication Critical patent/JP6666897B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2017502123A 2014-07-16 2015-07-09 堆積前の測定を伴う研磨 Active JP6666897B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14/333,395 2014-07-16
US14/333,395 US9811077B2 (en) 2014-07-16 2014-07-16 Polishing with pre deposition spectrum
US201462026306P 2014-07-18 2014-07-18
US62/026,306 2014-07-18
PCT/US2015/039780 WO2016010821A1 (en) 2014-07-16 2015-07-09 Polishing with measurement prior to deposition

Publications (3)

Publication Number Publication Date
JP2017521866A JP2017521866A (ja) 2017-08-03
JP2017521866A5 JP2017521866A5 (https=) 2018-08-16
JP6666897B2 true JP6666897B2 (ja) 2020-03-18

Family

ID=55078925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017502123A Active JP6666897B2 (ja) 2014-07-16 2015-07-09 堆積前の測定を伴う研磨

Country Status (5)

Country Link
JP (1) JP6666897B2 (https=)
KR (1) KR102534756B1 (https=)
CN (1) CN106471606B (https=)
TW (1) TWI726847B (https=)
WO (1) WO2016010821A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7023062B2 (ja) * 2017-07-24 2022-02-21 株式会社荏原製作所 基板研磨装置及び方法
JP6886557B2 (ja) * 2017-08-04 2021-06-16 マイクロマテリアルズ エルエルシー 改善された金属コンタクトランディング構造
KR102614427B1 (ko) * 2018-09-19 2023-12-18 삼성전자주식회사 반도체 소자 및 그 형성 방법
US11862520B2 (en) 2021-02-03 2024-01-02 Applied Materials, Inc. Systems and methods for predicting film thickness of individual layers using virtual metrology

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4460659B2 (ja) * 1997-10-22 2010-05-12 株式会社ルネサステクノロジ 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその製造装置
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
KR100579538B1 (ko) * 1998-06-30 2006-05-15 후지쯔 가부시끼가이샤 반도체 장치의 제조 방법
US6916525B2 (en) * 2000-03-10 2005-07-12 Koninklijke Philips Electronics N.V. Method of using films having optimized optical properties for chemical mechanical polishing endpoint detection
US6593238B1 (en) * 2000-11-27 2003-07-15 Motorola, Inc. Method for determining an endpoint and semiconductor wafer
US6908361B2 (en) * 2002-09-10 2005-06-21 Winbond Electronics Corporation Method of planarization of semiconductor devices
US8751033B2 (en) * 2008-11-14 2014-06-10 Applied Materials, Inc. Adaptive tracking spectrum features for endpoint detection
JP5728239B2 (ja) * 2010-03-02 2015-06-03 株式会社荏原製作所 研磨監視方法、研磨方法、研磨監視装置、および研磨装置
KR101774031B1 (ko) * 2010-05-05 2017-09-01 어플라이드 머티어리얼스, 인코포레이티드 종료점 검출을 위한 스펙트럼 피쳐들의 동적 또는 적응 트랙킹
TWI521625B (zh) * 2010-07-30 2016-02-11 應用材料股份有限公司 使用光譜監測來偵測層級清除
US8747189B2 (en) * 2011-04-26 2014-06-10 Applied Materials, Inc. Method of controlling polishing
CN102856230B (zh) * 2012-10-09 2015-02-04 深圳市华星光电技术有限公司 Tft基板接触孔蚀刻制程监控方法

Also Published As

Publication number Publication date
JP2017521866A (ja) 2017-08-03
TW201611951A (en) 2016-04-01
WO2016010821A1 (en) 2016-01-21
KR20170031225A (ko) 2017-03-20
TWI726847B (zh) 2021-05-11
KR102534756B1 (ko) 2023-05-18
CN106471606B (zh) 2021-07-27
CN106471606A (zh) 2017-03-01

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