JP6666626B2 - 荷電粒子検出器及び荷電粒子線装置 - Google Patents
荷電粒子検出器及び荷電粒子線装置 Download PDFInfo
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- JP6666626B2 JP6666626B2 JP2017014978A JP2017014978A JP6666626B2 JP 6666626 B2 JP6666626 B2 JP 6666626B2 JP 2017014978 A JP2017014978 A JP 2017014978A JP 2017014978 A JP2017014978 A JP 2017014978A JP 6666626 B2 JP6666626 B2 JP 6666626B2
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2008—Measuring radiation intensity with scintillation detectors using a combination of different types of scintillation detectors, e.g. phoswich
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
- G01N23/2258—Measuring secondary ion emission, e.g. secondary ion mass spectrometry [SIMS]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/025—Detectors specially adapted to particle spectrometers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2443—Scintillation detectors
Description
2 導電層
3 量子井戸構造
4 バッファ層
5 発光部-基板界面
6 基板
7 受光素子
8 試料
9 電子源
10 電子光学鏡筒
11 ライトガイド
12 一次電子線
13 試料室
14 二次電子線
21 発光層
22 非発光層
23 発光層
Claims (6)
- 試料に対する荷電粒子ビームの照射に基づいて得られる荷電粒子を検出する荷電粒子検出器において、
Ga1−x−yAlxInyN(但し0≦x<1、0≦y<1)を含む層と、GaNを含む層が交互に積層された第1の発光部と、Ga1−x−yAlxInyN(但し0≦x<1、0≦y<1)を含む層と、GaNを含む層が交互に積層された第2の発光部と、当該第1の発光部と第2の発光部との間に介在する非発光部とを備えたことを特徴とする荷電粒子検出器。 - 請求項1において、
前記非発光部は、前記発光部に含まれる1のGaN層より厚いGaNを含む層であることを特徴とする荷電粒子検出器。 - 請求項1において、
前記第1の発光部、前記第2の発光部、及び前記非発光部を含む部分の厚さの合計は、30nm〜10000nmであり、前記非発光部の厚さは、10〜5000nmであることを特徴とする荷電粒子検出器。 - 請求項1において、
前記第1の発光部、前記第2の発光部、及び前記非発光部を含む部分の厚さの合計は、50nm〜1000nmであり、前記非発光部の厚さは、20〜500nmであることを特徴とする荷電粒子検出器。 - 試料に対する荷電粒子ビームの照射に基づいて得られる荷電粒子を検出する荷電粒子検出器を備えた荷電粒子線装置において、
前記荷電粒子検出器は、Ga1−x−yAlxInyN(但し0≦x<1、0≦y<1)を含む層と、GaNを含む層が交互に積層された第1の発光部と、Ga1−x−yAlxInyN(但し0≦x<1、0≦y<1)を含む層と、GaNを含む層が交互に積層された第2の発光部と、当該第1の発光部と第2の発光部との間に介在する非発光部とを備えたことを特徴とする荷電粒子線装置。 - イオンを質量分離する質量分離部と、当該質量分離部によって分離されたイオンを検出する検出器を備えた質量分析装置において、
前記検出器は、Ga1−x−yAlxInyN(但し0≦x<1、0≦y<1)を含む層と、GaNを含む層が交互に積層された第1の発光部と、Ga1−x−yAlxInyN(但し0≦x<1、0≦y<1)を含む層と、GaNを含む層が交互に積層された第2の発光部と、当該第1の発光部と第2の発光部との間に介在する非発光部とを備えたことを特徴とする質量分析装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017014978A JP6666626B2 (ja) | 2017-01-31 | 2017-01-31 | 荷電粒子検出器及び荷電粒子線装置 |
PCT/JP2018/002319 WO2018143054A1 (ja) | 2017-01-31 | 2018-01-25 | 荷電粒子検出器及び荷電粒子線装置 |
DE112018000236.5T DE112018000236B4 (de) | 2017-01-31 | 2018-01-25 | Ladungsträgerdetektor, Ladungsträgerstrahlvorrichtung und Massenanalysevorrichtung |
US16/475,726 US10984979B2 (en) | 2017-01-31 | 2018-01-25 | Charged particle detector and charged particle beam apparatus |
IL267496A IL267496B2 (en) | 2017-01-31 | 2019-06-19 | Charged particle detector and charged particle beam device |
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JP2017014978A JP6666626B2 (ja) | 2017-01-31 | 2017-01-31 | 荷電粒子検出器及び荷電粒子線装置 |
Publications (2)
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JP2018124100A JP2018124100A (ja) | 2018-08-09 |
JP6666626B2 true JP6666626B2 (ja) | 2020-03-18 |
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Country Status (5)
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US (1) | US10984979B2 (ja) |
JP (1) | JP6666626B2 (ja) |
DE (1) | DE112018000236B4 (ja) |
IL (1) | IL267496B2 (ja) |
WO (1) | WO2018143054A1 (ja) |
Families Citing this family (2)
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WO2021005743A1 (ja) * | 2019-07-10 | 2021-01-14 | 株式会社日立ハイテク | 荷電粒子線装置用シンチレータおよび荷電粒子線装置 |
JP7326613B2 (ja) | 2020-06-10 | 2023-08-15 | 株式会社日立ハイテク | シンチレータ及び荷電粒子線装置 |
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JP3228208B2 (ja) * | 1997-12-25 | 2001-11-12 | 日本電気株式会社 | 半導体発光装置及びその製造方法 |
JP4365255B2 (ja) | 2004-04-08 | 2009-11-18 | 浜松ホトニクス株式会社 | 発光体と、これを用いた電子線検出器、走査型電子顕微鏡及び質量分析装置 |
US7649195B2 (en) * | 2007-06-12 | 2010-01-19 | Seoul Opto Device Co., Ltd. | Light emitting diode having active region of multi quantum well structure |
JP2010263085A (ja) * | 2009-05-07 | 2010-11-18 | Toshiba Corp | 発光素子 |
CN102185073B (zh) * | 2011-04-01 | 2012-09-19 | 厦门市三安光电科技有限公司 | 一种倒装发光二极管及其制作方法 |
US8748919B2 (en) * | 2011-04-28 | 2014-06-10 | Palo Alto Research Center Incorporated | Ultraviolet light emitting device incorporating optically absorbing layers |
US9093581B2 (en) * | 2012-05-05 | 2015-07-28 | Texas Tech University System | Structures and devices based on boron nitride and boron nitride-III-nitride heterostructures |
JP6101443B2 (ja) | 2012-08-01 | 2017-03-22 | 株式会社日立製作所 | シンチレータ及びこれを用いた放射線検出器 |
KR102142709B1 (ko) * | 2013-12-05 | 2020-08-07 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 조명 장치 |
JP2015230195A (ja) * | 2014-06-04 | 2015-12-21 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
KR102227772B1 (ko) * | 2014-08-19 | 2021-03-16 | 삼성전자주식회사 | 반도체 발광소자 |
KR20160033815A (ko) * | 2014-09-18 | 2016-03-29 | 삼성전자주식회사 | 반도체 발광소자 |
CZ201582A3 (cs) | 2015-02-09 | 2016-06-29 | Crytur, Spol.S R.O. | Scintilační detektor pro detekci ionizujícího záření |
JP6576257B2 (ja) | 2016-01-29 | 2019-09-18 | 株式会社日立ハイテクノロジーズ | 荷電粒子検出器、及び荷電粒子線装置 |
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2017
- 2017-01-31 JP JP2017014978A patent/JP6666626B2/ja active Active
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2018
- 2018-01-25 US US16/475,726 patent/US10984979B2/en active Active
- 2018-01-25 DE DE112018000236.5T patent/DE112018000236B4/de active Active
- 2018-01-25 WO PCT/JP2018/002319 patent/WO2018143054A1/ja active Application Filing
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2019
- 2019-06-19 IL IL267496A patent/IL267496B2/en unknown
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Publication number | Publication date |
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DE112018000236T5 (de) | 2019-08-29 |
IL267496B2 (en) | 2023-07-01 |
IL267496B1 (en) | 2023-03-01 |
US10984979B2 (en) | 2021-04-20 |
IL267496A (ja) | 2019-08-29 |
US20190355549A1 (en) | 2019-11-21 |
WO2018143054A1 (ja) | 2018-08-09 |
DE112018000236B4 (de) | 2022-12-08 |
JP2018124100A (ja) | 2018-08-09 |
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