JP6664369B2 - Ledパネルの製造方法 - Google Patents
Ledパネルの製造方法 Download PDFInfo
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- JP6664369B2 JP6664369B2 JP2017233690A JP2017233690A JP6664369B2 JP 6664369 B2 JP6664369 B2 JP 6664369B2 JP 2017233690 A JP2017233690 A JP 2017233690A JP 2017233690 A JP2017233690 A JP 2017233690A JP 6664369 B2 JP6664369 B2 JP 6664369B2
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- light emitting
- light
- emitting cells
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- sapphire substrate
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- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims description 80
- 229910052594 sapphire Inorganic materials 0.000 claims description 60
- 239000010980 sapphire Substances 0.000 claims description 60
- 239000004065 semiconductor Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 238000011049 filling Methods 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000012780 transparent material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 87
- 239000011159 matrix material Substances 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 238000002156 mixing Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000002365 multiple layer Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
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- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/50—Wavelength conversion elements
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
本発明は、マイクロLEDディスプレイ装置に適している。本明細書において、カラーセルという用語は、発光セルから出た光を波長変換するか、又は、波長変換することなくそのまま透過し、発光セルから出た光の色を定めるセルを意味する。
130 発光セル
131 サファイア基板
132 n型半導体層
133 活性層
134 p型半導体層
140、150 電極パッド
160 パッシベーション層
170 カラーセル
180 集光部
182 拡張型反射面
184 レンズ形状部
185 収斂型反射面
190 光シールド層
192 セルホール
200 マウント基板
240、250 電極
400 絶縁性アンダーフィル材料
500 ボンディング材料
Claims (10)
- LEDチップを準備し、前記LEDチップをマウント基板に実装することによってLEDパネルを製造する方法において、前記LEDチップの製造のために、一面及び反対面を含むサファイア基板を準備し、前記サファイア基板の一面に格子状パターンを形成し、前記格子状パターンに反射物質を充填し、反射領域を取り囲む反射面を含む複数の集光部を形成し、前記複数の集光部を覆うように、前記サファイア基板の一面にn型半導体層、活性層及びp型半導体層を含むエピタキシャル層を形成し、前記エピタキシャル層をエッチングすることによって前記n型半導体層の表面を含むn型領域上に少なくとも活性層及びp型半導体層を含む複数の発光セルを形成し、前記複数の発光セルのそれぞれは前記複数の集光部のそれぞれに対応することを特徴とするLEDパネルの製造方法。
- 前記複数の集光部のそれぞれは、対応する発光セルの垂直領域の周囲に沿って形成された反射面を含むことを特徴とする、請求項1に記載のLEDパネルの製造方法。
- 前記複数の発光セルを形成した後、前記複数の発光セルのそれぞれのp型半導体層に第1電極パッドを形成し、前記複数の発光セルを取り囲むn型領域の縁部付近のn型半導体層上に第2電極パッドを形成することを特徴とする、請求項1に記載のLEDパネルの製造方法。
- 前記第1電極パッド及び前記第2電極パッドを形成した後、反射性材料からなるパッシベーション層を前記複数の発光セルの各側面を覆うように形成することを特徴とする、請求項3に記載のLEDパネルの製造方法。
- 前記格子状パターンはv型断面を含むことを特徴とする、請求項1に記載のLEDパネルの製造方法。
- 前記エピタキシャル層の形成前又は形成後に、前記サファイア基板の厚さを減少させることを特徴とする、請求項1に記載のLEDパネルの製造方法。
- 前記サファイア基板の反対面に前記複数の発光セルに対応する複数のカラーセルを形成することを特徴とする、請求項1に記載のLEDパネルの製造方法。
- 前記複数のカラーセルを形成するために、前記サファイア基板の反対面に複数のセルホールを含む格子状光シールドを形成し、前記複数のセルホールに波長変換型光透過材料又は波長非変換型光透過材料を充填することを特徴とする、請求項7に記載のLEDパネルの製造方法。
- 前記格子状光シールドは、ブラックインク又はブラック樹脂で形成されることを特徴とする、請求項8に記載のLEDパネルの製造方法。
- 前記マウント基板に対する前記LEDチップの実装は、前記第1電極パッド及び前記第2電極パッドのそれぞれが前記マウント基板の第1電極及び第2電極と連結されるように、ボンディング材料を用いたフリップチップボンディングで行われることを特徴とする、請求項3に記載のLEDパネルの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2017-0080881 | 2017-06-27 | ||
KR1020170080881A KR102399464B1 (ko) | 2017-06-27 | 2017-06-27 | 엘이디 패널 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2017184078A Division JP6257831B1 (ja) | 2017-06-27 | 2017-09-25 | Ledパネル |
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JP2019009408A JP2019009408A (ja) | 2019-01-17 |
JP6664369B2 true JP6664369B2 (ja) | 2020-03-13 |
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JP2017184078A Active JP6257831B1 (ja) | 2017-06-27 | 2017-09-25 | Ledパネル |
JP2017233690A Active JP6664369B2 (ja) | 2017-06-27 | 2017-12-05 | Ledパネルの製造方法 |
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JP2017184078A Active JP6257831B1 (ja) | 2017-06-27 | 2017-09-25 | Ledパネル |
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US (3) | US9985175B1 (ja) |
JP (2) | JP6257831B1 (ja) |
KR (1) | KR102399464B1 (ja) |
WO (1) | WO2019004539A1 (ja) |
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KR102617466B1 (ko) * | 2016-07-18 | 2023-12-26 | 주식회사 루멘스 | 마이크로 led 어레이 디스플레이 장치 |
KR102399464B1 (ko) * | 2017-06-27 | 2022-05-19 | 주식회사 루멘스 | 엘이디 패널 |
TWI685097B (zh) * | 2019-01-31 | 2020-02-11 | 啟端光電股份有限公司 | 微發光二極體顯示器及其形成方法 |
WO2020175843A1 (ko) * | 2019-02-28 | 2020-09-03 | 주식회사 루멘스 | 마이크로 엘이디 디스플레이 모듈 및 그 제조방법 |
JP7410382B2 (ja) * | 2019-12-26 | 2024-01-10 | 日亜化学工業株式会社 | 光源装置 |
KR102440147B1 (ko) * | 2021-03-24 | 2022-09-02 | 이기봉 | 방열성을 높인 led 방열 회로기판 및 이의 제조 방법 |
CN113013300A (zh) * | 2021-05-25 | 2021-06-22 | 北京芯海视界三维科技有限公司 | 发光器件及显示器件 |
EP4343845A4 (en) * | 2021-07-27 | 2024-09-04 | Samsung Electronics Co Ltd | DISPLAY MODULE AND PORTABLE ELECTRONIC DEVICE COMPRISING SAME |
CN114792747B (zh) * | 2022-04-13 | 2024-04-02 | 江西耀驰科技有限公司 | 大发光角度倒装Mini LED芯片及其制备方法 |
TW202418577A (zh) | 2022-10-28 | 2024-05-01 | 財團法人工業技術研究院 | 色轉換面板與顯示器 |
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JPS50157161U (ja) * | 1974-06-14 | 1975-12-26 | ||
WO2004068182A2 (en) | 2003-01-24 | 2004-08-12 | Digital Optics International Corporation | High density illumination system |
JP4353167B2 (ja) * | 2004-10-21 | 2009-10-28 | 日亜化学工業株式会社 | 半導体発光素子とその製造方法 |
JP4802533B2 (ja) * | 2004-11-12 | 2011-10-26 | 日亜化学工業株式会社 | 半導体装置 |
JP2006165041A (ja) * | 2004-12-02 | 2006-06-22 | Toshiba Corp | 光半導体装置およびその製造方法 |
JP5076282B2 (ja) | 2005-04-28 | 2012-11-21 | 三菱化学株式会社 | 表示装置 |
JP2008153634A (ja) * | 2006-11-24 | 2008-07-03 | Sony Corp | 発光ダイオードの製造方法、発光ダイオード、光源セルユニット、発光ダイオードバックライト、発光ダイオード照明装置、発光ダイオードディスプレイおよび電子機器 |
JP5148337B2 (ja) | 2008-03-26 | 2013-02-20 | 京セラ株式会社 | 発光ダイオードチップおよびその製造方法 |
US9070851B2 (en) * | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
JP2012164938A (ja) * | 2011-02-09 | 2012-08-30 | Stanley Electric Co Ltd | 半導体発光装置の製造方法 |
TWI594661B (zh) * | 2013-04-19 | 2017-08-01 | 隆達電子股份有限公司 | 發光二極體顯示器及其製造方法 |
US9082926B2 (en) * | 2013-06-18 | 2015-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor optical emitting device with metallized sidewalls |
JP5553292B1 (ja) * | 2013-12-03 | 2014-07-16 | エルシード株式会社 | Led素子 |
GB201420452D0 (en) * | 2014-11-18 | 2014-12-31 | Mled Ltd | Integrated colour led micro-display |
JP2016001750A (ja) * | 2015-08-19 | 2016-01-07 | 株式会社東芝 | 半導体発光装置 |
KR102617466B1 (ko) * | 2016-07-18 | 2023-12-26 | 주식회사 루멘스 | 마이크로 led 어레이 디스플레이 장치 |
KR102399464B1 (ko) * | 2017-06-27 | 2022-05-19 | 주식회사 루멘스 | 엘이디 패널 |
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- 2017-06-27 KR KR1020170080881A patent/KR102399464B1/ko active IP Right Grant
- 2017-09-25 JP JP2017184078A patent/JP6257831B1/ja active Active
- 2017-12-05 JP JP2017233690A patent/JP6664369B2/ja active Active
- 2017-12-27 WO PCT/KR2017/015538 patent/WO2019004539A1/ko active Application Filing
- 2017-12-28 US US15/857,544 patent/US9985175B1/en active Active
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2018
- 2018-04-23 US US15/960,514 patent/US10164149B1/en active Active
- 2018-10-23 US US16/168,098 patent/US10636938B2/en active Active
Also Published As
Publication number | Publication date |
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US9985175B1 (en) | 2018-05-29 |
JP6257831B1 (ja) | 2018-01-10 |
JP2019009404A (ja) | 2019-01-17 |
KR102399464B1 (ko) | 2022-05-19 |
US20180374989A1 (en) | 2018-12-27 |
US10164149B1 (en) | 2018-12-25 |
US10636938B2 (en) | 2020-04-28 |
KR20190001229A (ko) | 2019-01-04 |
JP2019009408A (ja) | 2019-01-17 |
WO2019004539A1 (ko) | 2019-01-03 |
US20190058086A1 (en) | 2019-02-21 |
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