JP6656937B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- JP6656937B2 JP6656937B2 JP2016014002A JP2016014002A JP6656937B2 JP 6656937 B2 JP6656937 B2 JP 6656937B2 JP 2016014002 A JP2016014002 A JP 2016014002A JP 2016014002 A JP2016014002 A JP 2016014002A JP 6656937 B2 JP6656937 B2 JP 6656937B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000010949 copper Substances 0.000 claims description 123
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 58
- 229910052802 copper Inorganic materials 0.000 claims description 57
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 54
- 239000005751 Copper oxide Substances 0.000 claims description 47
- 229910000431 copper oxide Inorganic materials 0.000 claims description 47
- 238000001816 cooling Methods 0.000 claims description 37
- 238000007254 oxidation reaction Methods 0.000 claims description 33
- 229910052760 oxygen Inorganic materials 0.000 claims description 33
- 230000003647 oxidation Effects 0.000 claims description 32
- 239000001301 oxygen Substances 0.000 claims description 32
- 229910052739 hydrogen Inorganic materials 0.000 claims description 31
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 30
- 239000001257 hydrogen Substances 0.000 claims description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 25
- 230000009467 reduction Effects 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 4
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 4
- 229940112669 cuprous oxide Drugs 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 87
- 238000006243 chemical reaction Methods 0.000 description 22
- 239000010408 film Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005513 bias potential Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- -1 oxygen ions Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- LBJNMUFDOHXDFG-UHFFFAOYSA-N copper;hydrate Chemical compound O.[Cu].[Cu] LBJNMUFDOHXDFG-UHFFFAOYSA-N 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Description
本発明の太陽電池の製造方法は、銅層の表面に亜酸化銅(Cu2O)を含む酸化銅層が形成された構造を具備する太陽電池の製造方法であって、減圧下の雰囲気で正バイアスが印加された前記銅層の表面に酸素プラズマを照射し、プラズマ加熱によって前記銅層の温度を350℃以上として前記銅層の表面側の一部を酸化して前記酸化銅層を形成する酸化工程と、前記酸化工程の後で、前記酸素プラズマの照射を停止し、前記銅層の温度を45℃以下まで冷却する第1冷却工程と、前記第1冷却工程の後で、減圧下の雰囲気で前記酸化銅層に水素プラズマを照射する還元工程と、を具備することを特徴とする。
本発明の太陽電池の製造方法は、前記還元工程の後で、前記水素プラズマの照射を停止し、前記銅層の温度を45℃以下まで冷却する第2冷却工程を具備することを特徴とする。
本発明の太陽電池の製造方法は、前記酸化工程の前に、減圧下の雰囲気で前記銅層の表面に水素プラズマを照射する前処理工程を具備することを特徴とする。
本発明の太陽電池の製造方法は、前記前処理工程と前記酸化工程の間に、前記水素プラズマの照射を停止し、前記銅層の温度を45℃以下まで冷却する第0冷却工程を具備することを特徴とする。
本発明の太陽電池の製造方法において、前記酸素プラズマ及び前記水素プラズマはECRプラズマとして生成され、前記酸化工程及び前記還元工程において、前記ECRプラズマの生成の際に用いられた磁場が前記銅層の表面と交差する方向とされたことを特徴とする。
10 成膜チャンバ
11 プラズマ生成室
12 オリフィス
13 基板ホルダ
14 石英板
15 マスク
16 シャッター
17 赤外透過窓
20 マイクロ波発振器
21 導波管
22 石英窓
23A、23B、23C コイル
30 赤外放射計
100 基板(銅板)
200、210 太陽電池
201、212 銅層
202、211 酸化銅層
Claims (5)
- 銅層の表面に亜酸化銅(Cu2O)を含む酸化銅層が形成された構造を具備する太陽電池の製造方法であって、
減圧下の雰囲気で正バイアスが印加された前記銅層の表面に酸素プラズマを照射し、プラズマ加熱によって前記銅層の温度を350℃以上として前記銅層の表面側の一部を酸化して前記酸化銅層を形成する酸化工程と、
前記酸化工程の後で、前記酸素プラズマの照射を停止し、前記銅層の温度を45℃以下まで冷却する第1冷却工程と、
前記第1冷却工程の後で、減圧下の雰囲気で前記酸化銅層に水素プラズマを照射する還元工程と、
を具備することを特徴とする太陽電池の製造方法。 - 前記還元工程の後で、前記水素プラズマの照射を停止し、前記銅層の温度を45℃以下まで冷却する第2冷却工程を具備することを特徴とする請求項1に記載の太陽電池の製造方法。
- 前記酸化工程の前に、
減圧下の雰囲気で前記銅層の表面に水素プラズマを照射する前処理工程を具備することを特徴とする請求項1又は2に記載の太陽電池の製造方法。 - 前記前処理工程と前記酸化工程の間に、前記水素プラズマの照射を停止し、前記銅層の温度を45℃以下まで冷却する第0冷却工程を具備することを特徴とする請求項3に記載の太陽電池の製造方法。
- 前記酸素プラズマ及び前記水素プラズマはECRプラズマとして生成され、前記酸化工程及び前記還元工程において、前記ECRプラズマの生成の際に用いられた磁場が前記銅層の表面と交差する方向とされたことを特徴とする請求項1から請求項4までのいずれか1項に記載の太陽電池の製造方法。
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JP2019015279A (ja) | 2017-07-11 | 2019-01-31 | スズキ株式会社 | 鞍乗型車両の排気装置 |
KR102421156B1 (ko) * | 2020-01-31 | 2022-07-18 | 한국과학기술연구원 | 리튬금속 복합체 제조 방법 및 이를 포함하는 음전극 |
JP7052114B1 (ja) | 2021-03-24 | 2022-04-11 | 株式会社東芝 | 太陽電池用の積層薄膜の製造方法及び太陽電池の製造方法 |
WO2023281760A1 (ja) * | 2021-07-09 | 2023-01-12 | 株式会社 東芝 | 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム |
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JP3486543B2 (ja) * | 1997-11-12 | 2004-01-13 | キヤノン株式会社 | 酸化第1銅膜の堆積法及び該酸化第1銅膜堆積法を用いた半導体デバイスの製造方法 |
JP2005239526A (ja) * | 2004-02-27 | 2005-09-08 | Kanazawa Inst Of Technology | 亜酸化銅板の製造方法及び光起電力素子 |
CN102623521A (zh) * | 2011-01-31 | 2012-08-01 | 中国科学院物理研究所 | 一种氧化亚铜薄膜的制备方法 |
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