JP6655634B2 - 撮像装置および内視鏡 - Google Patents
撮像装置および内視鏡 Download PDFInfo
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- JP6655634B2 JP6655634B2 JP2017563489A JP2017563489A JP6655634B2 JP 6655634 B2 JP6655634 B2 JP 6655634B2 JP 2017563489 A JP2017563489 A JP 2017563489A JP 2017563489 A JP2017563489 A JP 2017563489A JP 6655634 B2 JP6655634 B2 JP 6655634B2
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- 238000003384 imaging method Methods 0.000 title claims description 71
- 239000003990 capacitor Substances 0.000 claims description 42
- 239000010409 thin film Substances 0.000 claims description 38
- 238000003780 insertion Methods 0.000 claims description 13
- 230000037431 insertion Effects 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000012986 modification Methods 0.000 description 18
- 230000004048 modification Effects 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 9
- 239000002131 composite material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
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- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
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- 238000000576 coating method Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
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- 238000000034 method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
- A61B1/05—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances characterised by the image sensor, e.g. camera, being in the distal end portion
- A61B1/051—Details of CCD assembly
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
- A61B1/12—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor with cooling or rinsing arrangements
- A61B1/128—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor with cooling or rinsing arrangements provided with means for regulating temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/555—Constructional details for picking-up images in sites, inaccessible due to their dimensions or hazardous conditions, e.g. endoscopes or borescopes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Surgery (AREA)
- Power Engineering (AREA)
- Radiology & Medical Imaging (AREA)
- Veterinary Medicine (AREA)
- Optics & Photonics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Biomedical Technology (AREA)
- Heart & Thoracic Surgery (AREA)
- Medical Informatics (AREA)
- Molecular Biology (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Public Health (AREA)
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- Biophysics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Endoscopes (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
図5に示したように、積層型薄膜コンデンサチップ14は、導電層31,32と誘電層33が交互に積層されたコンデンサ層41が絶縁層36を介してシリコン層42上に形成されている。コンデンサ層41の導電層31,32は、それぞれ、導電配線34,35を介して貫通配線24と電気的に接続される。
次に、本発明の内視鏡101に搭載される撮像装置1の第1の変形例について説明する。なお、図7は、第1の変形例の撮像ユニットの構成を示す断面図である。
図7に示すように、本変形例の撮像装置1は、配設接続部である配線接合用穴部25の孔軸Hが撮影光軸Oに沿ったX軸に対して、外方に所定の角度θを有するようにCSP(Chip Scale Package)サイズのカメラアッセンブリ10の積層型薄膜コンデンサチップ14の背面にTSV(Through−Silicon Via)によって形成されている。
次に、本発明の内視鏡101に搭載される撮像装置1の第2の変形例について説明する。なお、図8は、第2の変形例の撮像ユニットの構成を示す断面図である。
図8に示すように、本変形例の撮像装置1は、CSP(Chip Scale Package)サイズのカメラアッセンブリ10の積層型薄膜コンデンサチップ14の背面にTSV(Through−Silicon Via)によって形成する配線接合用穴部25を積層型薄膜コンデンサチップ14の背面側が細くなるようなテーパ状に形成されている。
次に、本発明の内視鏡101に搭載される撮像装置1の第3の変形例について説明する。なお、図9は、第3の変形例の撮像ユニットの構成を示す断面図である。
図9に示すように、本変形例の撮像装置1は、CSP(Chip Scale Package)サイズのカメラアッセンブリ10に接続する配線16,18の芯線17をイメージセンサチップ12、駆動用回路チップ13または積層型薄膜コンデンサチップ14の各チップ回路に近接した位置で接続されている。
次に、本発明の内視鏡101に搭載される撮像装置1の第4の変形例について説明する。なお、図10は、第4の変形例の撮像ユニットの構成を示す断面図である。
図10に示すように、本変形例の撮像装置1は、CSP(Chip Scale Package)サイズのカメラアッセンブリ10に接続する配線16,19のうち、配線19の芯線17を発熱量の多い回路、特に駆動用アンプなどの近傍または直接的に接続することで、配線19の芯線17がヒートシンクの代わりとなり放熱を効率化することができる。
Claims (7)
- 被写体像を受光する受光部を備えたイメージセンサチップと、
前記イメージセンサチップに積層された駆動用回路チップと、
前記駆動用回路チップに積層された薄膜コンデンサチップと、
を備え、
前記イメージセンサチップ、前記駆動用回路チップおよび前記薄膜コンデンサチップを積層して接合したカメラアッセンブリと、
前記薄膜コンデンサチップの前記駆動用回路チップとの接合面と反対側となる背面にケーブルの配線の芯線が挿入して接続されるシリコン貫通電極によって穴部状に形成された複数の配線接続部と、
を具備することを特徴とする撮像装置。 - 前記配線接続部は、前記受光部の受光面に対して直交する軸に対して所定の角度を有する孔軸を有していることを特徴とする請求項1に記載の撮像装置。
- 前記配線接続部は、前記薄膜コンデンサチップの前記背面側が細くなるようなテーパ状に形成されていることを特徴とする請求項1または請求項3に記載の撮像装置。
- 前記イメージセンサチップまたは前記駆動用回路チップから前記薄膜コンデンサチップまでシリコン貫通電極によって形成されたスルーホール電極を備えていることを特徴とする請求項1に記載の撮像装置。
- 前記スルーホール電極は、前記カメラアッセンブリにおける発熱量の多い回路の近傍に形成されることを特徴とする請求項5に記載の撮像装置。
- 前記スルーホール電極には、グランド用配線のグランド芯線が挿入して接続されることを特徴とする請求項6に記載の撮像装置。
- 請求項1、請求項3から請求項7のいずれか1項に記載された撮像装置と、
前記撮像装置が内蔵する先端部を有する被検体内に挿入される挿入部と、
を具備することを特徴とする内視鏡。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2016/052619 WO2017130371A1 (ja) | 2016-01-29 | 2016-01-29 | 撮像装置および内視鏡 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017130371A1 JPWO2017130371A1 (ja) | 2018-11-22 |
JP6655634B2 true JP6655634B2 (ja) | 2020-02-26 |
Family
ID=59397869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017563489A Active JP6655634B2 (ja) | 2016-01-29 | 2016-01-29 | 撮像装置および内視鏡 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20180325364A1 (ja) |
JP (1) | JP6655634B2 (ja) |
WO (1) | WO2017130371A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10879291B2 (en) * | 2018-11-27 | 2020-12-29 | Raytheon Company | Stacked sensor with integrated capacitors |
TWM576855U (zh) * | 2018-12-12 | 2019-04-21 | 榮晶生物科技股份有限公司 | Endoscope device and its cable assembly |
TWI733074B (zh) * | 2019-01-09 | 2021-07-11 | 榮晶生物科技股份有限公司 | 微型電子裝置及其電路基板 |
CN113271837B (zh) * | 2019-02-19 | 2024-09-27 | 奥林巴斯株式会社 | 内窥镜前端构造及内窥镜 |
WO2021152658A1 (ja) * | 2020-01-27 | 2021-08-05 | オリンパス株式会社 | 撮像装置、および、内視鏡 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0946566A (ja) * | 1995-08-01 | 1997-02-14 | Olympus Optical Co Ltd | 電子内視鏡用固体撮像装置 |
JPH0964330A (ja) * | 1995-08-29 | 1997-03-07 | Olympus Optical Co Ltd | 電子内視鏡用固体撮像装置 |
JPH11271646A (ja) * | 1998-03-23 | 1999-10-08 | Olympus Optical Co Ltd | 電子内視鏡用固体撮像装置 |
JP4197767B2 (ja) * | 1998-07-13 | 2008-12-17 | オリンパス株式会社 | 固体撮像装置 |
JP2010263020A (ja) * | 2009-04-30 | 2010-11-18 | Panasonic Corp | 光学デバイスモジュール |
JP2011188375A (ja) * | 2010-03-10 | 2011-09-22 | Olympus Corp | 撮像装置 |
JP2013090127A (ja) * | 2011-10-18 | 2013-05-13 | Olympus Corp | 固体撮像装置および撮像装置 |
-
2016
- 2016-01-29 WO PCT/JP2016/052619 patent/WO2017130371A1/ja active Application Filing
- 2016-01-29 JP JP2017563489A patent/JP6655634B2/ja active Active
-
2018
- 2018-07-24 US US16/043,344 patent/US20180325364A1/en not_active Abandoned
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Publication number | Publication date |
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JPWO2017130371A1 (ja) | 2018-11-22 |
WO2017130371A1 (ja) | 2017-08-03 |
US20180325364A1 (en) | 2018-11-15 |
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