JP6648613B2 - Inverter device - Google Patents

Description

  The present invention relates to an inverter device. In particular, it relates to a structure for reducing the circuit inductance of a single-phase inverter device.

FIG. 4 shows a circuit diagram of a general single-phase inverter. In the single-phase inverter, a pair of switching elements (IGBT ₁ and IGBT ₂ or IGBT ₃ and IGBT ₄ ) constituting an arm are connected in series between a P-side conductor and an N-side conductor.

As shown in FIG. 5, single-phase inverter 18 according to the prior art, the semiconductor power module (IGBT ₁ 6~IGBT ₄ 9) is disposed on the heat sink 19. Then, the P-side conductor 20 and the N-side conductor 21 are laminated via the insulating plate 22, and the smoothing capacitor 10 is provided in this laminated portion. Further, from one end of the laminate of the P-side conductor 20 and the N-side conductor 21 extends the P-side conductor 20, the extending portion is a collector terminal and IGBT ₄ 9 of IGBT ₂ 7 disposed on the heat sink 19 Connected to collector terminal. Further, from the end of the laminated portion of the P-side conductor 20 and the N-side conductor 21 extends the N side conductor 21, the emitter terminal and the IGBT ₃ 8 of IGBT ₁ 6 of the extending portion is disposed on the heat sink 19 Connected to the emitter terminal. Further, the emitter terminal of the collector terminal and IGBT ₂ 7 of IGBT ₁ 6 is provided conductor 23 of the AC output U, the conductor 24 of the AC output V is provided to the collector terminal and the IGBT ₄ 9 emitter terminal of IGBT ₃ 8 . An insulating plate 25 is provided between the conductor 23 and the conductor 24.

JP-A-7-31165 JP 2014-11819 A JP-A-8-294266 JP 2011-18847 A JP 2014-54103 A

  However, since the conduction path of the current from the smoothing capacitor spreads in the plane direction around the terminal portion of the semiconductor power module, there is a possibility that the circuit loop becomes large and the inductance of the circuit becomes large.

Further, the circuit inductance can be canceled by arranging the conductors so that the directions of the flowing currents are opposite to each other (for example, Patent Document 5). However, in the P-side conductor, the collector side of the IGBT ₂ is used. Of the IGBT _{4 and} the collector-side conductor of the IGBT ₄ , and the N-side conductor has a branch of the emitter-side conductor of the IGBT _{1 and} the emitter-side conductor of the IGBT _3. In the periphery, it is difficult to arrange the conductors along the conductors so that the directions of the flowing currents are opposite to each other.

  The present invention has been made in view of the above circumstances, and has as its object to provide a technique that contributes to a reduction in circuit inductance of an inverter device.

  One embodiment of the inverter device of the present invention that achieves the above object is an inverter device that performs power conversion between a DC power supply and an AC device by a switching operation of a semiconductor element, and is provided on a positive electrode side of the DC power supply. A plate-shaped positive-side conductor, a plate-shaped negative-side conductor provided on the negative side of the DC power supply, and a first positive-side semiconductor element connected in series between the positive-side conductor and the negative-side conductor And a first negative electrode side semiconductor element, a second positive electrode side semiconductor element and a second negative electrode side semiconductor element connected in series between the positive electrode side conductor and the negative electrode side conductor, and the positive electrode side conductor and the negative electrode side. An insulating plate provided between the conductive plate and a conductor; a first heat sink in the form of a plate standing upright on a surface of the insulating plate on which the positive-side conductor is provided; and a negative-side conductor of the insulating plate Is set up on the plate surface on the side where A second heat sink having a plate shape, wherein the positive-side conductor and the negative-side conductor are disposed to face each other across the insulating plate, and the first positive-side semiconductor element is provided on one surface of the first heat sink. The second positive electrode semiconductor element is provided on the other surface of the first heat sink, the first negative electrode semiconductor element is provided on one surface of the second heat sink, and the other of the second heat sink is provided. The semiconductor device is characterized in that the second negative electrode side semiconductor element is provided on a surface.

  According to the above invention, the circuit inductance of the inverter device can be reduced.

(A) is a front view of the inverter device according to the embodiment of the present invention, (b) is a plan view of the inverter device, (c) is a left side view of the inverter device, and (d) is a right side view of the inverter device. It is the perspective view seen from the front direction of the inverter device concerning the embodiment of the present invention. It is the perspective view seen from the back direction of the inverter device concerning the embodiment of the present invention. It is a circuit diagram of a single-phase inverter. (A) is a front view of the inverter device according to the prior art, (b) is a plan view of the inverter device, (c) is a left side view of the inverter device, and (d) is a right side view of the inverter device.

  An inverter device according to an embodiment of the present invention will be described in detail with reference to the drawings. Note that the inverter device of the present invention is not limited to the following embodiment.

  FIG. 1 shows an inverter device 1 according to an embodiment of the present invention. 2 and 3 are perspective views of the inverter device 1. FIG. The circuit diagram of the inverter device 1 is the same as the circuit diagram shown in FIG. 2 and 3, for convenience of explanation, the insulating plate 11 is shown as a transparent plate so that a portion hidden by the insulating plate 11 can be seen.

As shown in FIGS. 2 and 3, the inverter apparatus 1 includes a P-side conductor 2 and the N-side conductor 3, a heat sink 4 and 5, a semiconductor power module (IGBT ₁ 6~IGBT ₄ 9), a smoothing capacitor 10, Is provided.

The P-side conductor 2 and the N-side conductor 3 are plate-shaped conductors, and are connected to a positive electrode and a negative electrode of a DC power supply (not shown). The P-side conductor 2 and the N-side conductor 3 are arranged along the insulating plate 11 so that the current directions are opposite. That is, the P-side conductor 2 and the N-side conductor 3 are provided in a parallel plate shape with the insulating plate 11 interposed therebetween. A smoothing capacitor 10 is provided on the laminated portion of the P-side conductor 2 and the N-side conductor 3. At one end of the P-side conductor 2, a terminal portion 2a connected to a DC power supply is formed upright from the insulating plate 11. A pair of connecting portions 2 b and 2 c are formed on the side of the other end of the P-side conductor 2 so as to stand upright from the insulating plate 11. The connection portion 2b is connected to the collector terminal of the IGBT ₂ 7, connecting portion 2c is connected to the collector terminal of the IGBT ₄ 9. Similarly, at one end of the N-side conductor 3, a terminal portion 3 a connected to a DC power supply is formed upright from the insulating plate 11, and a pair of connecting portions is formed at the other end of the N-side conductor 3. 3b and 3c are formed upright from the insulating plate 11. This connection portion 3b is connected to the emitter terminal of the IGBT ₁ 6, the connecting portion 3c is connected to the emitter terminal of the IGBT ₃ 8.

The heat sink 4 is formed in a thin plate shape, and is provided upright with respect to the main surface of the P-side conductor 2. As the heat sink 4 (and the heat sink 5), for example, a water-cooled heat sink having a flow path through which water flows inside the heat sink, or a boiling cooling heat sink having a heat pipe provided inside the heat sink is used. IGBT ₂ 7 is provided on one surface of the heat sink 4, IGBT ₄ 9 is provided on the other surface of the heat sink 4.

The heat sink 5 is formed in a thin plate shape, and is provided upright with respect to the main surface of the N-side conductor 3. IGBT ₁ 6 is provided on one surface of the heat sink 5, IGBT ₃ 8 is provided on the other surface of the heat sink 5.

Semiconductor power module (IGBT ₁ 6~IGBT ₄ 9) is a freewheeling diode module (not shown) and is packaged connected in antiparallel to the switching element and the switching element (IGBT). The switching element is not limited to the IGBT, but may be a switching element such as a MOSFET.

As shown in FIG. 2, the emitter terminal of the IGBT ₁ 6 is connected to the N side conductor 3 via connection 3b. The collector terminal of the IGBT ₁ 6 is connected to the U ₁ conductor 12 of the AC output U. The U ₁ conductor 12 is a plate-shaped conductor and is provided on the insulating plate 11. The collector terminal of the IGBT ₂ 7 is connected to the P-side conductor 2 via the connecting portion 2b. The emitter terminal of the IGBT ₂ 7 is connected to U ₂ conductors 13 of the AC output U. The U ₂ conductor 13 is a plate-shaped conductor and is provided on the insulating plate 11. That is, the U ₁ conductor 12 and the U ₂ conductor 13 are stacked in contact with each other and arranged on the insulating plate 11. Hereinafter, a conductor in which the U ₁ conductor 12 and the U ₂ conductor 13 are overlapped is referred to as a U conductor 14.

As shown in FIG. 3, the emitter terminal of the IGBT ₃ 8 is connected to the N side conductor 3 via connection 3c. The collector terminal of the IGBT ₃ 8 is connected to V ₁ conductor 15 of the AC output V. The V ₁ conductor 15 is a plate-shaped conductor and is provided on the insulating plate 11. The collector terminal of the IGBT ₄ 9 is connected to the P-side conductor 2 via the connecting portion 2c. The emitter terminal of the IGBT ₄ 9 is connected to V ₂ conductor 16 of the AC output V. The V ₂ conductor 16 is a plate-shaped conductor and is provided on the insulating plate 11. That is, the V ₁ conductor 15 and the V ₂ conductor 16 are stacked in contact with each other and arranged on the insulating plate 11. Hereinafter, a conductor obtained by superposing the V ₁ conductor 15 and the V ₂ conductor 16 is referred to as a V conductor 17. Note that the U conductor 14 and the V conductor 17 extend to the output side with the insulating plate 11 interposed therebetween.

As described above, the inverter device 1 includes the P-side conductor 2 and the N-side conductor 3 through which a DC current flows, the U conductor 14 and the V conductor 17 through which an AC current flows. Then, in the inverter device 1, extends to the terminal portion of the semiconductor power module (IGBT ₁ 6~IGBT ₄ 9) in a state input and P-side conductor 2 and the N-side conductor 3 from the smoothing capacitor 10 side which along with, the semiconductor power module It is divided and connected once around the terminal area. Extending the output side in a state where the terminal portions of the semiconductor power module which is divided into upper and lower (emitter terminal in IGBT ₂ 7 and IGBT ₄ 9, IGBT ₁ 6 and IGBT ₃ collector terminal in 8) U conductor 14 from the V conductor 17 along ing. As described above, in the current path from the input side to the output side, the spread of the conduction path is minimized, and the opposing conductors in the current direction are arranged as closely as possible.

According to the inverter device 1 according to the embodiment of the present invention as described above, the two thin heat sink 4, 5 is provided a semiconductor power module (IGBT ₁ 6~IGBT ₄ 9), the conductor between the heat sink 4 and 5 (Specifically, the P-side conductor 2 and the N-side conductor 3) are provided, and the mutual inductance of the circuit can be reduced by arranging the conductors having opposite current directions.

That is, the IGBT ₂ 7 disposed on one surface of the heat sink 4, by arranging the IGBT ₄ 9 on the other surface of the heat sink 4, the semiconductor power module (IGBT ₂ 7, IGBT ₄ connected to the P-side conductor 2 9) is close to the collector terminals of can be arranged IGBT ₂ 7 and IGBT ₄ 9 by. Similarly, the IGBT ₁ 6 disposed on one surface of the heat sink 5, by arranging the IGBT ₃ 8 on the other surface of the heat sink 5, the semiconductor power module (IGBT ₁ 6, IGBT which is connected to the N side conductor 3 ₃ 8) is close to the emitter terminals of it can be placed IGBT ₁ 6 and IGBT ₃ 8. As a result, the width of the P-side conductor 2 and the N-side conductor 3 (the width in the direction perpendicular to the arrangement surface of the heat sinks 4 and 5 with respect to the semiconductor power module arrangement) is reduced, and the spread of the current conduction path is improved. Becomes smaller. As described above, the circuit loop is reduced, so that the circuit inductance on the DC side of the inverter device 1 is reduced, and the surge voltage when the element is turned off is suppressed. Further, by forming the P-side conductor 2 and the N-side conductor 3 as parallel plane conductors via the insulating plate 11 and arranging them so that the directions of currents are opposite to each other, an effect of canceling circuit inductance can be produced. it can. In particular, it is possible to arranged along the P-side conductor 2 and the N-side conductor 3 to the terminal portion near the semiconductor power module (IGBT ₁ 6~IGBT ₄ 9), reduces the circuit inductance, the time element off Surge voltage can be suppressed.

Further, the semiconductor power module (IGBT ₁ 6~IGBT ₄ 9) to both sides mounted to the heat sink 4 and 5, the conductor (P-side conductor 2 (and N-side conductor 3) and the U conductor 14 (and the V conductor 17)) is refracted Therefore, the inverter device 1 can be downsized. Specifically, in the processing part for avoiding contact, the U conductor 14 (and V conductor 17) is less refracted in the processing near the element of the U conductor 14 (and V conductor 17), so that the inverter device 1 is downsized. can do.

1. Inverter device 2. P-side conductor (positive-side conductor)
2a: Terminal portion, 2b, 2c: Connection portion 3: N-side conductor (negative-side conductor)
3a ... terminal portion, 3b, 3c ... connection portion 4, 5 ... heat sink 6-9 ... semiconductor power module (IGBT ₁ ~IGBT ₄₎
10 ... smoothing capacitor 11 ... insulating plate 12 ... U ₁ conductor, 13 ... U ₂ conductor, 14 ... U conductor 15 ... V ₁ conductor, 16 ... V ₂ conductor, 17 ... V conductor

Claims (4)

An inverter device that performs power conversion between a DC power supply and an AC device by a switching operation of a semiconductor element,
A plate-shaped positive-side conductor provided on the positive side of the DC power supply,
A plate-shaped negative electrode-side conductor provided on the negative electrode side of the DC power supply,
A first positive semiconductor element and a first negative semiconductor element connected in series between the positive conductor and the negative conductor,
A second positive electrode side semiconductor element and a second negative electrode side semiconductor element connected in series between the positive electrode side conductor and the negative electrode side conductor,
An insulating plate provided between the positive conductor and the negative conductor,
A plate-shaped first heat sink that stands upright on a plate surface of the insulating plate on which the positive electrode-side conductor is provided;
A plate-shaped second heat sink that stands upright on a plate surface of the insulating plate on which the negative electrode-side conductor is provided,
The positive electrode-side conductor and the negative electrode-side conductor are disposed to face each other with the insulating plate interposed therebetween,
The first positive side semiconductor element is provided on one surface of the first heat sink, and the second positive side semiconductor element is provided on the other surface of the first heat sink,
The inverter device according to claim 1, wherein the first negative-side semiconductor element is provided on one surface of the second heat sink, and the second negative-side semiconductor element is provided on the other surface of the second heat sink. The inverter device according to claim 1, wherein the positive electrode side conductor and the negative electrode side conductor are provided in a parallel plate shape with the insulating plate interposed therebetween. 3. The inverter device according to claim 1, wherein the first heat sink and the second heat sink are liquid-cooled heat sinks including water cooling or boiling cooling. A state in which a plate-shaped first conductor connected to the emitter of the first positive-side semiconductor element and a plate-shaped second conductor connected to the collector of the first negative-side semiconductor element are overlaid on the insulating plate Provided by
A state in which a plate-shaped third conductor connected to the emitter of the second positive electrode-side semiconductor element and a plate-shaped fourth conductor connected to the collector of the second negative electrode-side semiconductor element are overlaid on the insulating plate The inverter device according to any one of claims 1 to 3, wherein the inverter device is provided.

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