JP6646051B2 - コバルト研磨促進剤 - Google Patents

コバルト研磨促進剤 Download PDF

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Publication number
JP6646051B2
JP6646051B2 JP2017519258A JP2017519258A JP6646051B2 JP 6646051 B2 JP6646051 B2 JP 6646051B2 JP 2017519258 A JP2017519258 A JP 2017519258A JP 2017519258 A JP2017519258 A JP 2017519258A JP 6646051 B2 JP6646051 B2 JP 6646051B2
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JP
Japan
Prior art keywords
polishing composition
cobalt
polishing
substrate
amino
Prior art date
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JP2017519258A
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English (en)
Japanese (ja)
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JP2017538285A5 (OSRAM
JP2017538285A (ja
Inventor
クラフト スティーブン
クラフト スティーブン
ウォルフ アンドリュー
ウォルフ アンドリュー
ダブリュ．カーター フィリップ
ダブリュ．カーター フィリップ
ヘイズ クリスティン
ヘイズ クリスティン
ペトロ ベンジャミン
ペトロ ベンジャミン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
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Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2017538285A publication Critical patent/JP2017538285A/ja
Publication of JP2017538285A5 publication Critical patent/JP2017538285A5/ja
Application granted granted Critical
Publication of JP6646051B2 publication Critical patent/JP6646051B2/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2017519258A 2014-10-21 2015-10-21 コバルト研磨促進剤 Active JP6646051B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462066484P 2014-10-21 2014-10-21
US62/066,484 2014-10-21
US201562197992P 2015-07-28 2015-07-28
US62/197,992 2015-07-28
PCT/US2015/056749 WO2016065060A1 (en) 2014-10-21 2015-10-21 Cobalt polishing accelerators

Publications (3)

Publication Number Publication Date
JP2017538285A JP2017538285A (ja) 2017-12-21
JP2017538285A5 JP2017538285A5 (OSRAM) 2018-11-15
JP6646051B2 true JP6646051B2 (ja) 2020-02-14

Family

ID=55761505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017519258A Active JP6646051B2 (ja) 2014-10-21 2015-10-21 コバルト研磨促進剤

Country Status (7)

Country Link
US (2) US9688885B2 (OSRAM)
EP (1) EP3210238B1 (OSRAM)
JP (1) JP6646051B2 (OSRAM)
KR (1) KR102538575B1 (OSRAM)
CN (1) CN107148457B (OSRAM)
TW (1) TWI580767B (OSRAM)
WO (1) WO2016065060A1 (OSRAM)

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US10077382B1 (en) 2017-03-06 2018-09-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for polishing cobalt-containing substrate
US10233356B2 (en) 2017-03-06 2019-03-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing slurry for cobalt-containing substrate
JP6901297B2 (ja) * 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド 研磨用組成物
US10676646B2 (en) 2017-05-25 2020-06-09 Fujifilm Electronic Materials U.S.A., Inc. Chemical mechanical polishing slurry for cobalt applications
US10377921B2 (en) 2017-09-21 2019-08-13 Rohm and Haas Electronics Materials CMP Holdings, Inc. Chemical mechanical polishing method for cobalt
US10170335B1 (en) 2017-09-21 2019-01-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for cobalt
US20200172759A1 (en) * 2018-12-04 2020-06-04 Cabot Microelectronics Corporation Composition and method for cobalt cmp
WO2020255582A1 (ja) * 2019-06-20 2020-12-24 富士フイルム株式会社 研磨液、及び、化学的機械的研磨方法
CN113039039B (zh) 2019-10-15 2024-07-26 富士胶片电子材料美国有限公司 抛光组合物及其使用方法
TWI769619B (zh) * 2020-01-07 2022-07-01 美商Ｃｍｃ材料股份有限公司 經衍生的聚胺基酸
EP4288498A4 (en) * 2021-02-04 2024-12-11 CMC Materials, Inc. SILICON CARBONITRIDE POLISHING COMPOSITION AND METHOD

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Also Published As

Publication number Publication date
EP3210238A4 (en) 2018-04-18
US20170260421A1 (en) 2017-09-14
JP2017538285A (ja) 2017-12-21
CN107148457A (zh) 2017-09-08
US9850403B2 (en) 2017-12-26
TWI580767B (zh) 2017-05-01
TW201634652A (zh) 2016-10-01
US20160115353A1 (en) 2016-04-28
US9688885B2 (en) 2017-06-27
EP3210238B1 (en) 2019-06-26
EP3210238A1 (en) 2017-08-30
CN107148457B (zh) 2019-07-09
KR20170076719A (ko) 2017-07-04
WO2016065060A1 (en) 2016-04-28
KR102538575B1 (ko) 2023-06-01

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