JP6641879B2 - レジスト下層膜形成用組成物、レジスト下層膜及びパターニングされた基板の製造方法 - Google Patents
レジスト下層膜形成用組成物、レジスト下層膜及びパターニングされた基板の製造方法 Download PDFInfo
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- JP6641879B2 JP6641879B2 JP2015207573A JP2015207573A JP6641879B2 JP 6641879 B2 JP6641879 B2 JP 6641879B2 JP 2015207573 A JP2015207573 A JP 2015207573A JP 2015207573 A JP2015207573 A JP 2015207573A JP 6641879 B2 JP6641879 B2 JP 6641879B2
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- underlayer film
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| KR1020160022971A KR102498508B1 (ko) | 2015-03-03 | 2016-02-26 | 레지스트 하층막 형성용 조성물, 레지스트 하층막 및 패터닝된 기판의 제조 방법 |
| US15/059,372 US20170137663A9 (en) | 2015-03-03 | 2016-03-03 | Composition for resist underlayer film formation, resist underlayer film, and production method of patterned substrate |
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| KR102441862B1 (ko) * | 2016-09-16 | 2022-09-08 | 제이에스알 가부시끼가이샤 | 레지스트 하층막 형성용 조성물, 레지스트 하층막 및 그의 형성 방법 그리고 패터닝된 기판의 제조 방법 |
| JP6885281B2 (ja) * | 2016-10-12 | 2021-06-09 | Jsr株式会社 | レジスト下層膜形成用組成物、レジスト下層膜、レジスト下層膜の形成方法、及びパターニングされた基板の製造方法 |
| KR101988997B1 (ko) * | 2016-10-28 | 2019-06-13 | 삼성에스디아이 주식회사 | 유기막 조성물 및 패턴형성방법 |
| KR102351175B1 (ko) * | 2017-07-25 | 2022-01-14 | 에스케이이노베이션 주식회사 | 신규한 레지스트 하층막 형성용 중합체, 이를 포함하는 레지스트 하층막 형성용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
| KR20240125066A (ko) | 2017-12-20 | 2024-08-19 | 메르크 파텐트 게엠베하 | 에티닐 유도된 복합체, 이를 포함하는 조성물, 이에 의한 코팅의 제조 방법, 및 코팅을 포함하는 장치의 제조 방법 |
| KR102244470B1 (ko) | 2018-07-18 | 2021-04-23 | 삼성에스디아이 주식회사 | 중합체, 유기막 조성물 및 패턴 형성 방법 |
| JP6981945B2 (ja) | 2018-09-13 | 2021-12-17 | 信越化学工業株式会社 | パターン形成方法 |
| JP7445583B2 (ja) * | 2020-11-25 | 2024-03-07 | 信越化学工業株式会社 | レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法 |
| JP2024116011A (ja) | 2023-02-15 | 2024-08-27 | 信越化学工業株式会社 | パターン形成方法 |
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| KR20060056712A (ko) * | 2004-11-22 | 2006-05-25 | 삼성전자주식회사 | 포토리소그래피에 사용되는 바텀 레지스트용 폴리머 및 그제조 방법 |
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| JP5170511B2 (ja) | 2007-04-05 | 2013-03-27 | 日産化学工業株式会社 | 電子線硬化のケイ素含有レジスト下層膜を形成するためのケイ素含有レジスト下層膜形成組成物 |
| KR101397354B1 (ko) * | 2007-12-07 | 2014-05-19 | 미츠비시 가스 가가쿠 가부시키가이샤 | 리소그라피용 하층막 형성 조성물 및 다층 레지스트 패턴 형성 방법 |
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| US8513133B2 (en) * | 2011-03-31 | 2013-08-20 | Jsr Corporation | Composition for forming resist underlayer film and method for forming pattern |
| EP2762513A4 (en) * | 2011-09-30 | 2015-03-11 | Mitsubishi Gas Chemical Co | RESIN HAVING FLUORENE STRUCTURE AND SUB-LAYER FILMOGENIC MATERIAL FOR LITHOGRAPHY |
| JP5915452B2 (ja) * | 2011-09-30 | 2016-05-11 | Jsr株式会社 | レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法、並びにパターン形成方法 |
| JP6146305B2 (ja) * | 2011-10-12 | 2017-06-14 | Jsr株式会社 | パターン形成方法 |
| JP5925721B2 (ja) * | 2012-05-08 | 2016-05-25 | 信越化学工業株式会社 | 有機膜材料、これを用いた有機膜形成方法及びパターン形成方法 |
| KR102120145B1 (ko) | 2012-09-10 | 2020-06-08 | 제이에스알 가부시끼가이샤 | 레지스트 하층막 형성용 조성물 및 패턴 형성 방법 |
| KR102222665B1 (ko) * | 2013-06-24 | 2021-03-05 | 제이에스알 가부시끼가이샤 | 막 형성용 조성물, 레지스트 하층막 및 그의 형성 방법, 패턴 형성 방법 및 화합물 |
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| KR20230076778A (ko) | 2021-11-24 | 2023-05-31 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 레지스트 하층막 재료, 패턴 형성 방법 및 레지스트 하층막 형성 방법 |
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| TW201632996A (zh) | 2016-09-16 |
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| KR20160107102A (ko) | 2016-09-13 |
| KR102498508B1 (ko) | 2023-02-10 |
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