JP6639672B2 - 被覆材を有する電気装置 - Google Patents
被覆材を有する電気装置 Download PDFInfo
- Publication number
- JP6639672B2 JP6639672B2 JP2018527197A JP2018527197A JP6639672B2 JP 6639672 B2 JP6639672 B2 JP 6639672B2 JP 2018527197 A JP2018527197 A JP 2018527197A JP 2018527197 A JP2018527197 A JP 2018527197A JP 6639672 B2 JP6639672 B2 JP 6639672B2
- Authority
- JP
- Japan
- Prior art keywords
- electrical device
- thermal buffer
- buffer particles
- electrical
- cement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000576 coating method Methods 0.000 title claims description 49
- 239000011248 coating agent Substances 0.000 title claims description 48
- 239000000463 material Substances 0.000 claims description 87
- 239000002245 particle Substances 0.000 claims description 74
- 239000004568 cement Substances 0.000 claims description 64
- 230000007704 transition Effects 0.000 claims description 30
- 238000010521 absorption reaction Methods 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 238000010292 electrical insulation Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 229910016338 Bi—Sn Inorganic materials 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000000178 monomer Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 239000012782 phase change material Substances 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 230000002441 reversible effect Effects 0.000 claims description 2
- 239000012071 phase Substances 0.000 description 24
- 239000000758 substrate Substances 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 239000007789 gas Substances 0.000 description 7
- 239000000843 powder Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- XFWJKVMFIVXPKK-UHFFFAOYSA-N calcium;oxido(oxo)alumane Chemical compound [Ca+2].[O-][Al]=O.[O-][Al]=O XFWJKVMFIVXPKK-UHFFFAOYSA-N 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000036571 hydration Effects 0.000 description 3
- 238000006703 hydration reaction Methods 0.000 description 3
- 238000013021 overheating Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000010669 acid-base reaction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
- H01L23/4275—Cooling by change of state, e.g. use of heat pipes by melting or evaporation of solids
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Inorganic Insulating Materials (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Thermistors And Varistors (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015223422.3 | 2015-11-26 | ||
DE102015223422.3A DE102015223422A1 (de) | 2015-11-26 | 2015-11-26 | Elektrische Vorrichtung mit einer Umhüllmasse |
PCT/EP2016/077920 WO2017089208A1 (de) | 2015-11-26 | 2016-11-17 | Elektrische vorrichtung mit einer umhüllmasse |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018536996A JP2018536996A (ja) | 2018-12-13 |
JP6639672B2 true JP6639672B2 (ja) | 2020-02-05 |
Family
ID=57421824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018527197A Active JP6639672B2 (ja) | 2015-11-26 | 2016-11-17 | 被覆材を有する電気装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6639672B2 (zh) |
CN (1) | CN108292635B (zh) |
DE (1) | DE102015223422A1 (zh) |
MY (1) | MY195445A (zh) |
WO (1) | WO2017089208A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017114595A1 (de) * | 2017-06-29 | 2019-01-03 | MAGENWIRTH Technologies GmbH | Elektronische Schaltung |
DE102018215694A1 (de) | 2018-09-14 | 2020-03-19 | Robert Bosch Gmbh | Vergussmasse, elektrisch isoliertes elektrisches oder elektronisches Bauteil und Verfahren zu dessen elektrischer Isolierung |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS482057Y1 (zh) * | 1968-10-23 | 1973-01-19 | ||
JPS5111303B1 (zh) * | 1970-06-18 | 1976-04-10 | ||
JPS5144873A (ja) * | 1974-10-16 | 1976-04-16 | Hitachi Ltd | Moorudogatahandotaisoshi |
JPH0239461A (ja) * | 1988-07-28 | 1990-02-08 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPH1050900A (ja) * | 1996-08-06 | 1998-02-20 | Nippon Kayaku Co Ltd | 樹脂封止型半導体装置 |
US6815486B2 (en) * | 2002-04-12 | 2004-11-09 | Dow Corning Corporation | Thermally conductive phase change materials and methods for their preparation and use |
JP4148351B2 (ja) * | 2002-07-08 | 2008-09-10 | 独立行政法人科学技術振興機構 | 誘電体材料 |
JP2006201689A (ja) * | 2005-01-24 | 2006-08-03 | Fuji Xerox Co Ltd | 光学組成物、光学素子、及び調光方法 |
JP4589269B2 (ja) * | 2006-06-16 | 2010-12-01 | ソニー株式会社 | 半導体装置およびその製造方法 |
GB0721847D0 (en) * | 2007-11-07 | 2007-12-19 | Ciba Sc Holding Ag | Heat storage compositions and their manufacture |
CN101869008B (zh) * | 2007-12-26 | 2012-08-29 | 松下电器产业株式会社 | 半导体装置和多层配线基板 |
KR20090107882A (ko) * | 2008-04-10 | 2009-10-14 | 삼성전자주식회사 | 고정층을 포함하는 경사 조성 봉지 박막 및 그의 제조방법 |
DE102009002519A1 (de) * | 2009-04-21 | 2010-10-28 | Robert Bosch Gmbh | Gekapselte Schaltungsvorrichtung für Substrate mit Absorptionsschicht sowie Verfahren zu Herstellung derselben |
US8936864B2 (en) * | 2010-07-07 | 2015-01-20 | GM Global Technology Operations LLC | Batteries with phase change materials |
US9346991B2 (en) * | 2011-04-14 | 2016-05-24 | Ada Technologies, Inc. | Thermal interface materials and systems and devices containing the same |
WO2013076909A1 (ja) * | 2011-11-21 | 2013-05-30 | パナソニック株式会社 | 電気部品用樹脂、半導体装置、及び配線基板 |
US9963627B2 (en) * | 2012-11-09 | 2018-05-08 | Bioastra Technologies Inc. | Nanostructured phase change materials for solid state thermal management |
DE102013112267A1 (de) | 2013-11-07 | 2015-05-07 | Heraeus Deutschland GmbH & Co. KG | Halbleitermodul mit einer einen Halbleiterbaustein bedeckenden Umhüllungsmasse |
-
2015
- 2015-11-26 DE DE102015223422.3A patent/DE102015223422A1/de active Pending
-
2016
- 2016-11-17 WO PCT/EP2016/077920 patent/WO2017089208A1/de active Application Filing
- 2016-11-17 CN CN201680069325.2A patent/CN108292635B/zh active Active
- 2016-11-17 MY MYPI2018701733A patent/MY195445A/en unknown
- 2016-11-17 JP JP2018527197A patent/JP6639672B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
MY195445A (en) | 2023-01-21 |
DE102015223422A1 (de) | 2017-06-01 |
WO2017089208A1 (de) | 2017-06-01 |
CN108292635B (zh) | 2020-12-22 |
JP2018536996A (ja) | 2018-12-13 |
CN108292635A (zh) | 2018-07-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10593608B2 (en) | Semiconductor module comprising an encapsulating compound that covers at least one semiconductor component | |
TWI827655B (zh) | 灌封組成物,使電氣或電子元件電絕緣的方法和電絕緣元件 | |
CN107068621B (zh) | 带有包封物质的电装置 | |
JP6639672B2 (ja) | 被覆材を有する電気装置 | |
US10937714B2 (en) | Electrical device having a covering material | |
CN108352368B (zh) | 用于制造具有包裹材料的电装置的方法 | |
KR102578323B1 (ko) | 피복 재료를 구비한 전기 장치 | |
US20160219752A1 (en) | Thermal insulation sheet and method for producing same | |
Saidina et al. | Dielectric and thermal properties of CCTO/epoxy composites for embedded capacitor applications: mixing and fabrication methods | |
JP6629447B2 (ja) | 被覆材を有する電気装置を製造するための方法 | |
JP2008050383A (ja) | フィルム状電子機器用部材 | |
DE102015223466A1 (de) | Elektrische Vorrichtung mit einer Umhüllmasse | |
CN110799470B (zh) | 用于制造具有包裹物料的电气装置的方法 | |
JP2013229392A (ja) | 厚膜パターン形成方法 | |
JPH05274947A (ja) | 電子部品封止材およびそれを用いた電子部品 | |
JPS60229945A (ja) | エポキシ樹脂系封止材料 | |
JP2013225697A (ja) | 熱伝導性電子回路基板およびそれを用いた電子機器ならびにその製造方法 | |
KR20240012195A (ko) | 치밀구조를 가진 마그네시아 그레뉼 제조 방법 및 고열전도성 마그네시아 조성물, 이를 이용한 열계면 소재 | |
KR20240144768A (ko) | MgO 소재 및 그 제조 방법 | |
Suzuki et al. | High thermally conductive underfill for flip-chip applications | |
JP2015162545A (ja) | 封止用樹脂 | |
JPS5917514B2 (ja) | シ−ズヒ−タ− |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180719 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180525 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190422 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190508 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190808 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191219 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191224 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6639672 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |