JP6636094B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6636094B2 JP6636094B2 JP2018126683A JP2018126683A JP6636094B2 JP 6636094 B2 JP6636094 B2 JP 6636094B2 JP 2018126683 A JP2018126683 A JP 2018126683A JP 2018126683 A JP2018126683 A JP 2018126683A JP 6636094 B2 JP6636094 B2 JP 6636094B2
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- Prior art keywords
- hall element
- vertical hall
- excitation conductor
- conductor
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- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 40
- 239000004020 conductor Substances 0.000 claims description 94
- 230000005284 excitation Effects 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 description 16
- 230000004907 flux Effects 0.000 description 12
- 239000010410 layer Substances 0.000 description 11
- 230000007423 decrease Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0017—Means for compensating offset magnetic fields or the magnetic flux to be measured; Means for generating calibration magnetic fields
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
- G01R33/0035—Calibration of single magnetic sensors, e.g. integrated calibration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
- G01R33/077—Vertical Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
Description
20 素子分離拡散層
30 絶縁膜
100 縦型ホール素子
101 半導体層(磁気感受部)
111〜115 電極
200 励磁導体
Bc 較正磁界
WC 励磁導体の幅
WH 電極の幅
h 縦型ホール素子の基板深さ方向中心から励磁導体までの距離
Claims (3)
- 第1導電型の半導体基板と、
前記半導体基板上に設けられた縦型ホール素子と、
前記縦型ホール素子の直上に絶縁膜を介して設けられた励磁導体とを有する半導体装置であって、
前記縦型ホール素子は、
前記半導体基板上に設けられた第2導電型の半導体層と、
前記半導体層の表面に一直線上に設けられ、前記第2導電型の半導体層の不純物濃度よりも高濃度の第2導電型の不純物領域からなる複数の電極とを備え、
前記励磁導体の幅WCと前記縦型ホール素子の電極の幅WHとの比WC/WHが0.3≦WC/WH≦1.0であることを特徴とする半導体装置。 - 前記励磁導体が直線状をなし、前記励磁導体の長手方向の中心線と前記縦型ホール素子の前記半導体層の長手方向の中心線とが一致していることを特徴とする請求項1に記載の半導体装置。
- 前記励磁導体は、前記縦型ホール素子の基板深さ方向中心から前記励磁導体までの距離hと前記縦型ホール素子の電極の幅WHとの比h/WHが0より大きく、かつ0.4以下であることを特徴とする請求項1または2に記載の半導体装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018126683A JP6636094B2 (ja) | 2018-07-03 | 2018-07-03 | 半導体装置 |
US16/444,487 US11099244B2 (en) | 2018-07-03 | 2019-06-18 | Semiconductor device |
KR1020190075008A KR102642649B1 (ko) | 2018-07-03 | 2019-06-24 | 반도체 장치 |
TW108122273A TW202006983A (zh) | 2018-07-03 | 2019-06-26 | 半導體裝置 |
EP19183444.9A EP3591416A1 (en) | 2018-07-03 | 2019-06-28 | Semiconductor device |
CN201910594097.6A CN110673062A (zh) | 2018-07-03 | 2019-07-03 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018126683A JP6636094B2 (ja) | 2018-07-03 | 2018-07-03 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020009801A JP2020009801A (ja) | 2020-01-16 |
JP6636094B2 true JP6636094B2 (ja) | 2020-01-29 |
Family
ID=67137746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018126683A Active JP6636094B2 (ja) | 2018-07-03 | 2018-07-03 | 半導体装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11099244B2 (ja) |
EP (1) | EP3591416A1 (ja) |
JP (1) | JP6636094B2 (ja) |
KR (1) | KR102642649B1 (ja) |
CN (1) | CN110673062A (ja) |
TW (1) | TW202006983A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11367831B2 (en) * | 2019-03-28 | 2022-06-21 | Ablic Inc. | Semiconductor device |
WO2022067599A1 (zh) * | 2020-09-30 | 2022-04-07 | 上海灿瑞科技股份有限公司 | 三轴向霍尔磁力计 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2796391B2 (ja) * | 1990-01-08 | 1998-09-10 | 株式会社日立製作所 | 物理量検出方法および物理量検出装置あるいはこれらの方法あるいは装置を利用したサーボモータおよびこのサーボモータを使用したパワーステアリング装置 |
JP4200358B2 (ja) * | 2002-12-13 | 2008-12-24 | サンケン電気株式会社 | ホール素子を備えた電流検出装置 |
JP4784186B2 (ja) * | 2005-07-19 | 2011-10-05 | 株式会社デンソー | 縦型ホール素子およびその磁気検出感度調整方法 |
DE102006037226B4 (de) * | 2006-08-09 | 2008-05-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Im Messbetrieb kalibrierbarer magnetischer 3D-Punktsensor |
DE102010028390B4 (de) * | 2010-04-29 | 2012-12-06 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Bestimmung eines Erregerleiterabstandes von einem Magnetfeldsensor, Verfahren zum Kalibrieren des Magnetfeldsensors sowie ein kalibrierbarer Magnetfeldsensor und Verwendung einer Erregerleiterstruktur zur Bestimmung eines Erregerleiterabstandes |
DE102011004391A1 (de) * | 2011-02-18 | 2012-08-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Kalibrierbarer Magnetfeldsensor und Verfahren zur Herstellung desselben |
JP6814035B2 (ja) * | 2016-12-05 | 2021-01-13 | エイブリック株式会社 | 半導体装置 |
-
2018
- 2018-07-03 JP JP2018126683A patent/JP6636094B2/ja active Active
-
2019
- 2019-06-18 US US16/444,487 patent/US11099244B2/en active Active
- 2019-06-24 KR KR1020190075008A patent/KR102642649B1/ko active IP Right Grant
- 2019-06-26 TW TW108122273A patent/TW202006983A/zh unknown
- 2019-06-28 EP EP19183444.9A patent/EP3591416A1/en active Pending
- 2019-07-03 CN CN201910594097.6A patent/CN110673062A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
KR102642649B1 (ko) | 2024-02-29 |
TW202006983A (zh) | 2020-02-01 |
EP3591416A1 (en) | 2020-01-08 |
JP2020009801A (ja) | 2020-01-16 |
CN110673062A (zh) | 2020-01-10 |
US20200011942A1 (en) | 2020-01-09 |
US11099244B2 (en) | 2021-08-24 |
KR20200004246A (ko) | 2020-01-13 |
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