JP6631752B2 - Negative photosensitive resin composition, semiconductor device and electronic equipment - Google Patents

Description

  The present invention relates to a negative photosensitive resin composition, a semiconductor device, and an electronic device.

  2. Description of the Related Art A resin film made of a resin material is used for a semiconductor element for a protective film, an interlayer insulating film, a flattening film, and the like. In addition, depending on the mounting method of the semiconductor element, it is required to increase the thickness of these resin films. However, when the thickness of the resin film is increased, the warpage of the semiconductor chip becomes significant.

  On the other hand, a technique of forming a pattern on a resin film by imparting photosensitivity and light transmittance to the resin film is known. Thereby, a target pattern can be formed with high accuracy.

  Therefore, development of a resin composition capable of producing a resin film having photosensitivity and capable of forming a thick film has been promoted.

  For example, Patent Literature 1 discloses a photosensitive resin composition that has excellent light transmittance and can suppress warpage of a semiconductor chip by optimizing a molecular structure and reducing residual stress.

  The photosensitive resin composition is also used for the purpose of embedding wiring in a resin film formed of the photosensitive resin composition and forming an insulating portion for insulating the wiring.

JP 2003-209104 A

  On the other hand, a resin film used for mounting a semiconductor element is required to have adhesion to a semiconductor chip and wiring. For this reason, it is important for such a resin film to have good adhesion to an inorganic material and a metal material.

  However, the conventional resin film has a problem that the reliability after mounting cannot be sufficiently increased due to low adhesion to an inorganic material and a metal material.

  An object of the present invention is to provide a photosensitive resin composition capable of forming a resin film having good adhesion to an inorganic material and a metal material, a semiconductor device including the resin film, and an electronic device including the semiconductor device. It is in.

Such an object is achieved by the present invention described in the following (1) to (11).
(1) a thermosetting resin;
A photopolymerization initiator,
A coupling agent containing an acid anhydride as a functional group,
A negative photosensitive resin composition comprising:

  (2) The negative photosensitive resin composition according to the above (1), wherein the thermosetting resin contains a solid component at room temperature.

(3) The negative photosensitive resin composition according to the above (1) or (2), wherein the thermosetting resin contains a polyfunctional epoxy resin.
(4) The negative photosensitive resin composition according to the above (3), wherein the content of the polyfunctional epoxy resin is 40 to 80% by mass based on a nonvolatile component of the photosensitive resin composition.

  (5) The negative photosensitive resin composition according to any one of (1) to (4), wherein the coupling agent is a compound containing an alkoxysilyl group.

  (6) The negative photosensitive resin composition according to any one of (1) to (5), wherein the acid anhydride is succinic anhydride.

(7) The negative photosensitive resin composition according to any one of the above (1) to (6), wherein the negative photosensitive resin composition further contains a solvent.
(8) The negative photosensitive resin composition according to (7), wherein the negative photosensitive resin composition is dissolved in the solvent to form a varnish.

(9) a semiconductor chip;
A resin film provided on the semiconductor chip, the resin film including a cured product of the negative photosensitive resin composition according to any one of the above (1) to (8);
A semiconductor device comprising:

  (10) The semiconductor device according to (9), wherein a redistribution layer electrically connected to the semiconductor chip is embedded in the resin film.

  (11) An electronic apparatus comprising the semiconductor device according to (9) or (10).

  According to the present invention, a negative photosensitive resin composition capable of forming a resin film having good adhesion to an inorganic material and a metal material is obtained.

Further, according to the present invention, a semiconductor device including the resin film is obtained.
Further, according to the present invention, an electronic device including the above semiconductor device can be obtained.

FIG. 1 is a longitudinal sectional view showing a first embodiment of the semiconductor device of the present invention. FIG. 2 is a partially enlarged view of a region surrounded by a chain line in FIG. FIG. 3 is a diagram illustrating an example of a method of manufacturing the semiconductor device illustrated in FIG. FIG. 4 is a diagram illustrating an example of a method of manufacturing the semiconductor device illustrated in FIG. FIG. 5 is a longitudinal sectional view showing a second embodiment of the semiconductor device of the present invention. FIG. 6 is a partially enlarged view of a region surrounded by a chain line in FIG. FIG. 7 is a process chart showing a method for manufacturing the semiconductor device shown in FIG. FIG. 8 is a diagram for explaining a method of manufacturing the semiconductor device shown in FIG. FIG. 9 is a diagram for explaining a method of manufacturing the semiconductor device shown in FIG. FIG. 10 is a diagram for explaining a method of manufacturing the semiconductor device shown in FIG.

  Hereinafter, a negative photosensitive resin composition, a semiconductor device, and an electronic device of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

First, prior to the description of a negative photosensitive resin composition and a photosensitive resin film containing the negative photosensitive resin composition, a first embodiment of a semiconductor device of the present invention to which these are applied will be described.

<< 1st Embodiment >>
1. 1. Semiconductor Device FIG. 1 is a longitudinal sectional view showing a first embodiment of the semiconductor device of the present invention. FIG. 2 is a partially enlarged view of a region surrounded by a chain line in FIG. In the following description, the upper side in FIG. 1 is referred to as “upper”, and the lower side is referred to as “lower”.

  The semiconductor device 1 shown in FIG. 1 has a so-called package-on-package structure including a through electrode substrate 2 and a semiconductor package 3 mounted thereon.

  The through electrode substrate 2 includes an organic insulating layer 21 (resin film), a plurality of through wirings 22 penetrating from the upper surface to the lower surface of the organic insulating layer 21, and a semiconductor chip 23 embedded in the organic insulating layer 21. A lower wiring layer 24 provided on the lower surface of the organic insulating layer 21, an upper wiring layer 25 provided on the upper surface of the organic insulating layer 21, and a solder bump 26 provided on the lower surface of the lower wiring layer 24. Have. In the semiconductor device 1 of the present embodiment, the organic insulating layer 21 is provided at least on the surface of the semiconductor chip 23 and includes a photosensitive resin composition or a cured product of a photosensitive resin film described later.

  On the other hand, the semiconductor package 3 includes a package substrate 31, a semiconductor chip 32 mounted on the package substrate 31, bonding wires 33 for electrically connecting the semiconductor chip 32 and the package substrate 31, a semiconductor chip 32 and a bonding wire. The package includes a sealing layer in which 33 is embedded and a solder bump provided on the lower surface of the package substrate 31.

  The semiconductor package 3 is stacked on the through electrode substrate 2. Thus, the solder bumps 35 of the semiconductor package 3 and the upper wiring layer 25 of the through electrode substrate 2 are electrically connected.

  In such a semiconductor device 1, since the adhesion of the organic insulating layer 21 to the through wiring 22 and the semiconductor chip 23 is good, the reliability is high.

  Further, since it is not necessary to use a thick substrate such as an organic substrate including a core layer in the through electrode substrate 2, the height can be easily reduced. For this reason, it is possible to contribute to downsizing of an electronic device incorporating the semiconductor device 1.

  In addition, since the through-electrode substrate 2 having different semiconductor chips and the semiconductor package 3 are stacked, the mounting density per unit area can be increased. Also from this viewpoint, the size of the semiconductor device 1 can be reduced.

Hereinafter, the through electrode substrate 2 and the semiconductor package 3 will be described in more detail.
The lower wiring layer 24 and the upper wiring layer 25 included in the through electrode substrate 2 shown in FIG. 2 each include an insulating layer, a wiring layer, a through wiring, and the like. Thus, the lower wiring layer 24 and the upper wiring layer 25 include wiring inside and on the surface, and are electrically connected so as to penetrate in the thickness direction via the through wiring.

  Among these, the wiring layer included in the lower wiring layer 24 is connected to the semiconductor chip 23 and the solder bump 26. Therefore, the lower wiring layer 24 functions as a redistribution layer of the semiconductor chip 23, and the solder bumps 26 function as external terminals of the semiconductor chip 23.

  The through wiring 22 shown in FIG. 2 is provided so as to penetrate the organic insulating layer 21. Thereby, the lower wiring layer 24 and the upper wiring layer 25 can be electrically connected. As a result, the through-electrode substrate 2 and the semiconductor package 3 can be stacked, and the function of the semiconductor device 1 can be enhanced.

  Further, the wiring layers included in the upper wiring layer 25 shown in FIG. 2 are connected to the through wirings 22 and the solder bumps 35. Therefore, the upper wiring layer 25 is electrically connected to the semiconductor chip 23, functions as a redistribution layer of the semiconductor chip 23, and functions as an interposer interposed between the semiconductor chip 23 and the package substrate 31. Also works. As a result, the density of the rewiring layer can be increased.

  Further, since the through wiring 22 penetrates the organic insulating layer 21, an effect of reinforcing the organic insulating layer 21 is obtained. For this reason, even if the mechanical strength of the lower wiring layer 24 and the upper wiring layer 25 is low, it is possible to avoid a decrease in the mechanical strength of the entire through electrode substrate 2. As a result, the lower wiring layer 24 and the upper wiring layer 25 can be further thinned, and the height of the semiconductor device 1 can be further reduced.

  Further, the organic insulating layer 21 is provided so as to cover the semiconductor chip 23. Thereby, the effect of protecting the semiconductor chip 23 is enhanced. As a result, the reliability of the semiconductor device 1 can be improved. Further, the semiconductor device 1 which can be easily applied to a mounting method such as the package-on-package structure according to the present embodiment is obtained.

  The diameter W (see FIG. 2) of the through wiring 22 is not particularly limited, but is preferably about 1 to 100 μm, and more preferably about 2 to 80 μm. Thereby, the conductivity of the through wiring 22 can be ensured without impairing the mechanical properties of the organic insulating layer 21.

  The semiconductor package 3 shown in FIG. 2 may be any type of package. For example, QFP (Quad Flat Package), SOP (Small Outline Package), BGA (Ball Grid Array), CSP (Chip Size Package), QFN (Quad Flat Non-read, Long-packed, Long-packed, Long-packed, Long-packed, Long-packed, Long-packed, Long-packed, Long-packed, Long-packed, Long-packed, Long-packed, Long-packed, Long-packed) Examples include LF-BGA (Lead Frame BGA) and the like.

  The form of the semiconductor chip 32 is not particularly limited. For example, the semiconductor chip 32 shown in FIG. 1 is configured by stacking a plurality of chips. For this reason, high densification has been achieved. The plurality of chips may be provided side by side in the plane direction, or may be provided in the plane direction while being stacked in the thickness direction.

  The package substrate 31 may be any substrate. For example, the package substrate 31 includes an insulating layer (not shown), a wiring layer, a through wiring, and the like. Among them, the solder bump 35 and the bonding wire 33 can be electrically connected via the through wiring.

  The sealing layer 34 is made of, for example, a known sealing resin material. By providing such a sealing layer 34, the semiconductor chip 32 and the bonding wires 33 can be protected from external force and external environment.

  Since the semiconductor chip 23 included in the through electrode substrate 2 and the semiconductor chip 32 included in the semiconductor package 3 are arranged close to each other, it is possible to enjoy advantages such as high speed and low loss of mutual communication. Can be. From this viewpoint, for example, one of the semiconductor chip 23 and the semiconductor chip 32 is used as an arithmetic element such as a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), or an AP (Application Processor), and the other is a DRAM (Dynamic Random Access). If a memory device such as a memory device or a flash memory is used, these devices can be arranged close to each other in the same device, thereby realizing the semiconductor device 1 that achieves both high functionality and miniaturization. Can be.

<Organic insulating layer>
Next, the organic insulating layer 21 will be described in detail.

  The organic insulating layer 21 of the present embodiment contains a photosensitive resin composition or a cured product of a photosensitive resin film described later.

  The cured product of the photosensitive resin composition according to the present embodiment (including the cured product of the photosensitive resin film; the same applies hereinafter) preferably has a glass transition temperature (Tg) of 140 ° C. or higher, and more preferably 150 ° C. or higher. Is more preferable, and the temperature is more preferably 160 ° C. or higher. Thereby, the heat resistance of the organic insulating layer 21 can be increased, so that, for example, the semiconductor device 1 that can be used even in a high-temperature environment can be realized. In addition, the upper limit of the cured product of the photosensitive resin composition may not be particularly set, but is, for example, 250 ° C. or lower.

  The glass transition temperature of the cured product of the photosensitive resin composition was determined using a thermomechanical analyzer (TMA) on a predetermined test piece (4 mm wide × 20 mm long × 0.005 to 0.015 mm thick). It is calculated from the results of measurement under the conditions of a starting temperature of 30 ° C., a measuring temperature range of 30 to 400 ° C., and a temperature rising rate of 5 ° C./min.

  The cured product of the photosensitive resin composition according to this embodiment has a coefficient of linear expansion (CTE) of preferably 5 to 80 ppm / ° C, more preferably 10 to 70 ppm / ° C, and 15 to 60 ppm / ° C. C. is more preferred. Thereby, the coefficient of linear expansion of the organic insulating layer 21 can be made close to, for example, the coefficient of linear expansion of the silicon material. Therefore, for example, the organic insulating layer 21 in which the semiconductor chip 23 is unlikely to warp or the like is obtained. As a result, a highly reliable semiconductor device 1 is obtained.

  The coefficient of linear expansion of the cured product of the photosensitive resin composition was determined using a thermomechanical analyzer (TMA) on a predetermined test piece (4 mm wide × 20 mm long × 0.005 to 0.015 mm thick). It is calculated from the results of measurement under the conditions of a starting temperature of 30 ° C., a measuring temperature range of 30 to 400 ° C., and a temperature rising rate of 5 ° C./min.

  The cured product of the photosensitive resin composition according to this embodiment preferably has a 5% thermal weight loss temperature Td5 of 300 ° C. or more, more preferably 320 ° C. or more. As a result, even at high temperatures, weight loss due to thermal decomposition or the like hardly occurs, and a cured product excellent in heat resistance can be obtained. Therefore, the organic insulating layer 21 having excellent durability in a high temperature environment can be obtained.

  The 5% thermogravimetric loss temperature Td5 of the cured product of the photosensitive resin composition was calculated from the result of measuring 5 mg of the cured product using a simultaneous differential thermogravimetric analyzer (TG / DTA). You.

  The cured product of the photosensitive resin composition according to the present embodiment preferably has an elongation of 5 to 50%, more preferably 6 to 45%, and still more preferably 7 to 40%. . Thereby, the elongation rate of the organic insulating layer 21 is optimized, so that, for example, even when the through wiring 22 is provided so as to penetrate the organic insulating layer 21, the organic insulating layer 21 and the through wiring 22 , Etc., can be suppressed from occurring at the interface of. In addition, the occurrence of cracks and the like can be suppressed in the organic insulating layer 21 itself.

  If the elongation is less than the lower limit, cracks or the like may occur in the organic insulating layer 21 depending on the thickness, shape, and the like of the organic insulating layer 21. On the other hand, if the elongation exceeds the upper limit, the mechanical properties of the organic insulating layer 21 may be reduced depending on the thickness and shape of the organic insulating layer 21.

  The elongation percentage of the cured product of the photosensitive resin composition is measured as follows. First, a tensile test (tensile speed: 5 mm / min) was performed on a predetermined test piece (width 6.5 mm × length 20 mm × thickness 0.005 to 0.015 mm) in an atmosphere at a temperature of 25 ° C. and a humidity of 55%. It is carried out in. The tensile test is performed using a tensile tester manufactured by Orientec Co., Ltd. (Tensilon RTA-100). Next, the tensile elongation is calculated from the result of the tensile test. Here, the tensile test is performed with the number of tests n = 10, and an average value of five large measured values is obtained, and this is defined as a measured value.

  The cured product of the photosensitive resin composition according to the present embodiment preferably has a tensile strength of 20 MPa or more, and more preferably 30 to 300 MPa. Thereby, the organic insulating layer 21 having sufficient mechanical strength and excellent durability can be obtained.

  In addition, the tensile strength of the cured product of the photosensitive resin composition is determined from the result of the tensile test obtained by the same method as the above-described method of measuring the elongation.

  The cured product of the photosensitive resin composition according to this embodiment preferably has a tensile modulus of 0.5 GPa or more, and more preferably 1 to 5 GPa. Thereby, the organic insulating layer 21 having sufficient mechanical strength and excellent durability can be obtained.

  In addition, the elastic modulus of the cured product of the photosensitive resin composition is obtained from the result of the tensile test obtained by the same method as the measurement of the elongation described above.

As the above-mentioned cured product, for example, a product cured under the following conditions is used. First, the photosensitive resin composition is applied on a silicon wafer substrate by a spin coater or the like, and then dried on a hot plate at 120 ° C. for 5 minutes to obtain a coating film. The entire surface of the obtained coating film is exposed at 700 mJ / cm ² , and PEB (Post Exposure Bake) is performed at 70 ° C. for 5 minutes. Thereafter, heating is performed at 200 ° C. for 90 minutes to obtain a cured film.

2. Method of Manufacturing Semiconductor Device The semiconductor device 1 of the present embodiment described above can be manufactured, for example, as follows.
3 and 4 are diagrams illustrating an example of a method of manufacturing the semiconductor device 1 illustrated in FIG.

[1]
First, as shown in FIG. 3A, a substrate 202 is prepared.

  The constituent material of the substrate 202 is not particularly limited, and examples thereof include a metal material, a glass material, a ceramic material, a semiconductor material, and an organic material. Further, as the substrate 202, a semiconductor wafer such as a silicon wafer, a glass wafer, or the like may be used. Note that an electronic circuit may be formed on the substrate 202 as necessary.

[2]
Next, as shown in FIG. 3B, the semiconductor chip 23 is disposed on the substrate 202. In the present manufacturing method, as an example, the plurality of semiconductor chips 23 are arranged while being separated from each other. The plurality of semiconductor chips 23 may be of the same type or different types.

  Note that an interposer (not shown) may be provided between the substrate 202 and the semiconductor chip 23 as necessary. The interposer functions as, for example, a redistribution layer of the semiconductor chip 23. Therefore, the interposer may include a pad (not shown) for electrically connecting to an electrode of the semiconductor chip 23 described later. Thereby, the pad spacing and arrangement pattern of the semiconductor chip 23 can be converted, and the degree of freedom in designing the semiconductor device 1 can be further increased.

  As such an interposer, for example, an inorganic substrate such as a silicon substrate, a ceramic substrate, or a glass substrate, or an organic substrate such as a resin substrate is used.

[3]
Next, as shown in FIG. 3C, a photosensitive resin layer 210 is disposed on the substrate 202 so as to bury the semiconductor chip 23. As the photosensitive resin layer 210, a photosensitive resin composition or a photosensitive resin film described later is used.

  At this time, in particular, by using a photosensitive resin film containing a photosensitive resin composition, the thickness of the photosensitive resin layer 210 can be easily increased. Accordingly, the semiconductor chip 23 can be easily embedded without reducing the thickness.

  When the photosensitive resin layer 210 is formed using a photosensitive resin film, a single photosensitive resin film may be attached from above the semiconductor chip 23, and the photosensitive resin film laminated on the carrier film may be attached to the semiconductor chip. After sticking on the carrier film 23, the photosensitive resin film may be left by peeling off the carrier film.

  In the operation of attaching the photosensitive resin film, a known laminating method may be used. In that case, for example, a vacuum laminator is used. The vacuum laminator may be a batch type or a continuous type.

  In the process of attaching the photosensitive resin film, the photosensitive resin film may be heated as necessary.

  The heating temperature is appropriately set according to the constituent materials of the photosensitive resin film, the heating time, and the like, but is preferably about 40 to 150 ° C, more preferably about 50 to 140 ° C, and 60 to 130 ° C. It is more preferable that the temperature is about ° C. By heating at such a temperature, the embedding property of the semiconductor chip 23 into the photosensitive resin film is further improved. Accordingly, the occurrence of defects such as voids can be suppressed, and the photosensitive resin layer 210 that has been further planarized can be efficiently formed.

  If the heating temperature is lower than the lower limit, the melting of the photosensitive resin film becomes insufficient, so that the embedding property may be reduced depending on the constituent materials of the photosensitive resin film. On the other hand, if the heating temperature exceeds the upper limit, the photosensitive resin film may be hardened depending on the constituent materials thereof.

  The heating time is appropriately set according to the constituent materials of the photosensitive resin film, the heating temperature, and the like, but is preferably about 5 to 180 seconds, and more preferably about 10 to 60 seconds.

  In the photosensitive resin film, the semiconductor chip 23 can be embedded by being heated and pressed. The pressing force at that time is appropriately set according to the constituent materials of the photosensitive resin film and the like, but is preferably about 0.2 to 5 MPa, and more preferably about 0.4 to 1 MPa.

  On the other hand, by using the varnish-shaped photosensitive resin composition, the photosensitive resin layer 210 can be easily flattened.

  In the operation of forming the photosensitive resin layer 210 using the varnish-shaped photosensitive resin composition, the viscosity is adjusted with a solvent or the like as necessary, and the photosensitive resin layer 210 is coated on the substrate 202 using various coating apparatuses. Then, the photosensitive resin layer 210 is obtained by drying the obtained coating film. In order to secure a sufficient thickness so that the semiconductor chip is completely embedded, application and drying of the varnish-shaped photosensitive resin composition may be repeated a plurality of times.

  Examples of the coating device include a spin coater, a spray device, and an ink jet device.

  The thickness of the photosensitive resin film (the thickness of the photosensitive resin layer 210) is appropriately set in accordance with the cured film thickness (height H in FIG. 2) and in consideration of curing shrinkage, while the semiconductor chip The thickness is not particularly limited as long as it can embed 23. However, the thickness of the photosensitive resin film is preferably about 20 to 1000 μm, more preferably about 50 to 750 μm, and still more preferably about 100 to 500 μm. By setting the thickness of the photosensitive resin layer 210 within the above range, the semiconductor chip 23 can be easily embedded, and sufficient mechanical strength is imparted to the cured film of the photosensitive resin layer 210. be able to. As a result, it is possible to form a cured film (organic insulating layer 21) that contributes to the rigidity of the semiconductor device 1 as well as good protection of the semiconductor chip 23.

[4]
Next, as shown in FIG. 3D, a mask 41 is arranged in a predetermined region on the photosensitive resin layer 210. Then, light (active radiation) is irradiated through the mask 41. As a result, the photosensitive resin layer 210 is exposed to light according to the pattern of the mask 41.

  Thereafter, a post-exposure bake is performed as necessary. The condition of the post-exposure bake is not particularly limited, and for example, a heating temperature of about 50 to 150 ° C. and a heating time of about 1 to 10 minutes.

  FIG. 3D illustrates a case where the photosensitive resin layer 210 has a so-called negative-type photosensitivity. In this example, a region of the photosensitive resin layer 210 corresponding to the non-light-shielding portion of the mask 41 is given solubility in a developing solution.

Thereafter, by performing a developing process, an opening 42 penetrating through the photosensitive resin layer 210 corresponding to the non-light-shielding portion of the mask 41 is formed (see FIG. 3E).
Examples of the developer include an organic developer and a water-soluble developer.

  After the development, the photosensitive resin layer 210 is subjected to a post-development heat treatment. The conditions for the post-development heat treatment are not particularly limited, but a heating temperature of about 160 to 250 ° C. and a heating time of about 30 to 180 minutes. This makes it possible to cure the photosensitive resin layer 210 while suppressing the thermal influence on the semiconductor chip 23, and obtain the organic insulating layer 21.

[5]
Next, as shown in FIG. 4F, the through wiring 22 is formed in the opening 42 (see FIG. 3E).

  A known method is used for forming the through wiring 22, and for example, the following method is used.

  First, a seed layer (not shown) is formed on the organic insulating layer 21. The seed layer is formed on the upper surface of the organic insulating layer 21 together with the inside of the opening 42 (side wall and bottom surface).

  As the seed layer, for example, a copper seed layer is used. The seed layer is formed by, for example, a sputtering method.

  The seed layer may be made of the same metal as the through wiring 22 to be formed, or may be made of a different metal.

  Next, a resist layer (not shown) is formed on a region other than the opening 42 in the seed layer (not shown). Then, using the resist layer as a mask, the inside of the opening 42 is filled with metal. For this filling, for example, an electrolytic plating method is used. Examples of the metal to be filled include copper or copper alloy, aluminum or aluminum alloy, gold or gold alloy, silver or silver alloy, nickel or nickel alloy, and the like. Thus, the conductive material is buried in the opening 42, and the through wiring 22 is formed.

Next, the resist layer (not shown) is removed.
The formation location of the through wiring 22 is not limited to the illustrated position. For example, it may be provided at a position penetrating the photosensitive resin layer 210 covering the semiconductor chip 23.

[6]
Next, as shown in FIG. 4G, an upper wiring layer 25 is formed on the upper surface side of the organic insulating layer 21. The upper wiring layer 25 is formed using, for example, a photolithography method and a plating method.

[7]
Next, as shown in FIG. 4H, the substrate 202 is peeled. Thereby, the lower surface of the organic insulating layer 21 is exposed.

[8]
Next, as shown in FIG. 4I, a lower wiring layer 24 is formed on the lower surface side of the organic insulating layer 21. The lower wiring layer 24 is formed by using, for example, a photolithography method and a plating method. The lower wiring layer 24 thus formed is electrically connected to the upper wiring layer 25 via the through wiring 22.

[9]
Next, as shown in FIG. 4J, solder bumps 26 are formed on the lower wiring layer 24. Further, a protective film such as a solder resist layer may be formed on the upper wiring layer 25 and the lower wiring layer 24 as necessary.

As described above, the through electrode substrate 2 is obtained.
The through electrode substrate 2 shown in FIG. 4J can be divided into a plurality of regions. Accordingly, for example, by dividing the through electrode substrate 2 into individual pieces along the dashed line shown in FIG. 4 (j), a plurality of through electrode substrates 2 can be efficiently manufactured. In addition, a diamond cutter etc. can be used for individualization, for example.

[10]
Next, the semiconductor package 3 is arranged on the singulated through electrode substrate 2. Thereby, the semiconductor device 1 shown in FIG. 1 is obtained.

  Such a method of manufacturing the semiconductor device 1 can be applied to a wafer-level process or a panel-level process using a large-area substrate.

  Further, by using the photosensitive resin layer 210 containing the photosensitive resin composition, the arrangement of the semiconductor chip 23, the embedding of the semiconductor chip 23, the formation of the through wiring 22, the formation of the upper wiring layer 25, and the formation of the lower wiring layer 24 Can be performed by a wafer level process or a panel level process. As a result, the manufacturing efficiency of the semiconductor device 1 can be increased and the cost can be reduced.

<< 2nd Embodiment >>
Next, a second embodiment of the semiconductor device of the present invention will be described.

  FIG. 5 is a longitudinal sectional view showing a second embodiment of the semiconductor device of the present invention. FIG. 6 is a partially enlarged view of a region surrounded by a chain line in FIG. In the following description, the upper side in FIG. 5 is referred to as “upper”, and the lower side is referred to as “lower”.

  Hereinafter, the second embodiment of the semiconductor device will be described focusing on differences from the first embodiment, and description of similar items will be omitted.

1. Semiconductor Device In the semiconductor device 1 of the second embodiment, the configuration of the through wiring formed in the organic insulating layer 21 is different, and the upper wiring layer 25 is formed using a photosensitive resin composition described later. Although the semiconductor device is different from the semiconductor device of the first embodiment described above, the rest is the same as the semiconductor device 1 of the first embodiment described above.

In the semiconductor device 1 of the present embodiment, as shown in FIGS. 5 and 6, a through wiring 221 is provided in the organic insulating layer 21 so as to penetrate the organic insulating layer 21. As a result, the lower wiring layer 24 and the upper wiring layer 25 are electrically connected to each other, and the through-electrode substrate 2 and the semiconductor package 3 can be stacked, so that the functionality of the semiconductor device 1 can be enhanced. it can. The diameter W (see FIG. 6) of the through wiring 221 is not particularly limited, but can be the same size as the diameter W of the through wiring 22 of the semiconductor device 1 of the first embodiment described above.
Further, the semiconductor device 1 of the present embodiment also includes a through wiring 222 provided so as to penetrate the organic insulating layer 21 located on the upper surface of the semiconductor chip 23, in addition to the through wiring 221. Thus, electrical connection between the upper surface of the semiconductor chip 23 and the upper wiring layer 25 can be achieved.

Further, the wiring layer 253 included in the upper wiring layer 25 shown in FIG. 6 is connected to the through wiring 221 and the solder bump 35. Therefore, the upper wiring layer 25 is electrically connected to the semiconductor chip 23, functions as a redistribution layer of the semiconductor chip 23, and functions as an interposer interposed between the semiconductor chip 23 and the package substrate 31. Also works.
The upper wiring layer 25 is formed using a photosensitive resin composition described later, and has a configuration in which the wiring layer 253 is embedded in a resin film of the photosensitive resin composition. In such a semiconductor device 1, since the adhesion of the upper wiring layer 25 to the wiring layer 253 is good, the reliability is high.

2. Next, a method for manufacturing the semiconductor device 1 shown in FIG. 5 will be described.

  FIG. 7 is a process chart showing a method for manufacturing the semiconductor device 1 shown in FIG. 8 to 10 are diagrams for explaining a method of manufacturing the semiconductor device 1 shown in FIG.

  The method for manufacturing the semiconductor device 1 according to the present embodiment includes a chip disposing step S1 for obtaining the organic insulating layer 21 so as to bury the semiconductor chip 23 and the through wirings 221 and 222 provided on the substrate 202; An upper wiring layer forming step S2 for forming the upper wiring layer 25 on the semiconductor chip 23, a substrate peeling step S3 for peeling the substrate 202, a lower wiring layer forming step S4 for forming the lower wiring layer 24, and a solder bump 26 are formed. The method includes a solder bump forming step S5 of forming and obtaining the through electrode substrate 2, and a lamination step S6 of laminating the semiconductor package 3 on the through electrode substrate 2.

  Among them, the upper wiring layer forming step S2 includes a first resin film disposing step S20 of disposing the photosensitive resin varnish 5 on the organic insulating layer 21 and the semiconductor chip 23 to obtain a photosensitive resin layer 2510; A first exposure step S21 for performing exposure processing on the layer 2510, a first development step S22 for performing development processing on the photosensitive resin layer 2510, a first curing step S23 for performing curing processing on the photosensitive resin layer 2510, and a wiring layer. A wiring layer forming step S24 for forming the photosensitive resin layer 2510; a second resin film disposing step S25 for disposing the photosensitive resin varnish 5 on the photosensitive resin layer 2510 and the wiring layer 253 to obtain the photosensitive resin layer 2520; A second exposure step S26 of performing an exposure process on the layer 2520, a second development step S27 of performing a development process on the photosensitive resin layer 2520, and a second curing process of performing a curing process on the photosensitive resin layer 2520. Including the S28, and the through wiring forming step S29 of forming the through wiring 254 to the opening 424 (the through hole), the.

  Hereinafter, each step will be sequentially described. The following manufacturing method is an example, and the present invention is not limited to this.

[1] Chip placement step S1
First, as shown in FIG. 8A, a substrate 202, a semiconductor chip 23 provided on the substrate 202, through wirings 221 and 222, and an organic insulating layer 21 provided so as to embed them are provided. A chip embedding structure 27 is prepared.

  The constituent material of the substrate 202 is not particularly limited, and examples thereof include a metal material, a glass material, a ceramic material, a semiconductor material, and an organic material. Further, as the substrate 202, a semiconductor wafer such as a silicon wafer, a glass wafer, or the like may be used.

  The semiconductor chip 23 is adhered on the substrate 202. In the present manufacturing method, as an example, a plurality of semiconductor chips 23 are provided on the same substrate 202 while being separated from each other. The plurality of semiconductor chips 23 may be of the same type or different types. Further, the space between the substrate 202 and the semiconductor chip 23 may be fixed via an adhesive layer (not shown) such as a die attach film.

  Note that an interposer (not shown) may be provided between the substrate 202 and the semiconductor chip 23 as necessary. The interposer functions as, for example, a redistribution layer of the semiconductor chip 23. Therefore, the interposer may include a pad (not shown) for electrically connecting to an electrode of the semiconductor chip 23 described later. Thereby, the pad spacing and arrangement pattern of the semiconductor chip 23 can be converted, and the degree of freedom in designing the semiconductor device 1 can be further increased.

  As such an interposer, for example, an inorganic substrate such as a silicon substrate, a ceramic substrate, or a glass substrate, or an organic substrate such as a resin substrate is used.

  The organic insulating layer 21 is a resin film containing a thermosetting resin or a thermoplastic resin, for example, as a component of a photosensitive resin composition described later.

  Examples of the constituent material of the through wirings 221 and 222 include copper or copper alloy, aluminum or aluminum alloy, gold or gold alloy, silver or silver alloy, nickel or nickel alloy, and the like.

  Note that the chip embedding structure 27 manufactured by a method different from the above may be prepared.

[2] Upper wiring layer forming step S2
Next, the upper wiring layer 25 is formed on the organic insulating layer 21 and the semiconductor chip 23.

[2-1] First resin film disposing step S20
First, as shown in FIG. 8B, the photosensitive resin varnish 5 is applied (arranged) on the organic insulating layer 21 and the semiconductor chip 23. Thus, a liquid coating of the photosensitive resin varnish 5 is obtained as shown in FIG. The photosensitive resin varnish 5 is a varnish of a photosensitive resin composition described later.

  The application of the photosensitive resin varnish 5 is performed using, for example, a spin coater, a bar coater, a spray device, an ink jet device, or the like.

  The viscosity of the photosensitive resin varnish 5 is not particularly limited, but is preferably from 10 to 700 mPa · s, and more preferably from 30 to 400 mPa · s. When the viscosity of the photosensitive resin varnish 5 is within the above range, a thinner photosensitive resin layer 2510 (see FIG. 8D) can be formed. As a result, the upper wiring layer 25 can be made thinner, and the thickness of the semiconductor device 1 can be easily reduced.

  The viscosity of the photosensitive resin varnish 5 is a value measured using, for example, a cone-plate viscometer (TV-25, manufactured by Toki Sangyo Co., Ltd.) under the conditions of a rotation speed of 50 rpm and a measurement time of 300 seconds.

  Next, the liquid film of the photosensitive resin varnish 5 is dried. Thus, a photosensitive resin layer 2510 shown in FIG. 8D is obtained.

  The drying conditions of the photosensitive resin varnish 5 are not particularly limited, and include, for example, conditions of heating at a temperature of 80 to 150 ° C. for 1 to 60 minutes.

  In this step, instead of the process of applying the photosensitive resin varnish 5, a process of arranging a photosensitive resin film formed by forming the photosensitive resin varnish 5 into a film may be adopted.

  The photosensitive resin film is produced, for example, by applying a photosensitive resin varnish 5 to the lower surface of a carrier film or the like by using various coating devices, and then drying the obtained coating film.

  Thereafter, as necessary, a pre-exposure bake is performed on the photosensitive resin layer 2510. By performing the pre-exposure bake, the molecules contained in the photosensitive resin layer 2510 are stabilized, and the reaction in the first exposure step S21 described below can be stabilized. , The adverse effect of the heating on the photoacid generator can be minimized.

  The temperature of the pre-exposure bake is preferably from 70 to 130C, more preferably from 75 to 120C, and still more preferably from 80 to 110C. If the temperature of the pre-exposure bake is below the lower limit, the purpose of stabilizing molecules by the pre-exposure bake may not be achieved. On the other hand, when the temperature of the pre-exposure bake exceeds the upper limit, the movement of the photoacid generator becomes too active, so that the acid is hardly generated even when irradiated with light in the first exposure step S21 described below. May be widened and patterning processing accuracy may be reduced.

  Further, the time of the pre-exposure baking is appropriately set according to the temperature of the pre-exposure baking, but is preferably 1 to 10 minutes, more preferably 2 to 8 minutes at the above-mentioned temperature, and still more preferably 3-6 minutes. If the time of the pre-exposure bake is less than the lower limit, the heating time is insufficient, so that the purpose of stabilizing the molecules by the pre-exposure bake may not be achieved. On the other hand, if the time of the pre-exposure bake exceeds the upper limit, the heating time is too long, so that even if the temperature of the pre-exposure bake is within the above range, the action of the photoacid generator is hindered. There is a possibility that it will.

  The atmosphere for the heat treatment is not particularly limited, and may be an inert gas atmosphere, a reducing gas atmosphere, or the like.

  Further, the atmospheric pressure is not particularly limited, and may be under reduced pressure or under increased pressure. Note that the normal pressure refers to a pressure of about 30 to 150 kPa, and is preferably atmospheric pressure.

[2-2] First exposure step S21
Next, exposure processing is performed on the photosensitive resin layer 2510.

  First, as shown in FIG. 8D, a mask 412 is arranged in a predetermined region on the photosensitive resin layer 2510. Then, light (active radiation) is irradiated through the mask 412. Thus, the photosensitive resin layer 2510 is exposed to light according to the pattern of the mask 412.

  Note that FIG. 8D illustrates a case where the photosensitive resin layer 2510 has a so-called negative-type photosensitivity. In this example, in the photosensitive resin layer 2510, a region corresponding to the light-shielding portion of the mask 412 is provided with solubility in the developing solution.

  On the other hand, in a region corresponding to the transmitting portion of the mask 412, a catalyst such as an acid is generated by the action of the photosensitive agent. The generated acid acts as a catalyst for the reaction of the thermosetting resin in a step described later.

The exposure amount in the exposure treatment is not particularly limited, but is preferably 100 to 2000 mJ / cm ^2, and more preferably 200~1000mJ / cm ^2. Thus, underexposure and overexposure of the photosensitive resin layer 2510 can be suppressed. As a result, high patterning accuracy can be finally achieved.
Thereafter, if necessary, the photosensitive resin layer 2510 is subjected to a post-exposure bake.

  The temperature of the post-exposure bake is not particularly limited, but is preferably 50 to 150 ° C, more preferably 50 to 130 ° C, still more preferably 55 to 120 ° C, and particularly preferably 60 to 110 ° C. Is done. By performing post-exposure bake treatment at such a temperature, the catalytic action of the generated acid is sufficiently enhanced, and the thermosetting resin can be reacted in a shorter time and more sufficiently. On the other hand, if the temperature is too high, the diffusion of the acid is promoted, and the processing accuracy of the patterning may be reduced. However, if the temperature is within the above range, such a concern can be reduced.

  If the temperature of the post-exposure bake is lower than the lower limit, the action of a catalyst such as an acid cannot be sufficiently increased, so that the reaction rate of the thermosetting resin may decrease or time may be required. There is. On the other hand, when the temperature of the post-exposure bake exceeds the upper limit, the diffusion of the acid is promoted (widened), and the processing accuracy of the patterning may be reduced.

  On the other hand, the time of the post-exposure bake is appropriately set in accordance with the temperature of the post-exposure bake, but is preferably 1 to 30 minutes, more preferably 2 to 20 minutes at the above-mentioned temperature, and still more preferably 3-15 minutes. By performing the post-exposure bake treatment for such a time, the thermosetting resin can be sufficiently reacted, and at the same time, the diffusion of acid can be suppressed, and a decrease in patterning processing accuracy can be suppressed.

  The atmosphere for the post-exposure bake is not particularly limited, and may be an inert gas atmosphere, a reducing gas atmosphere, or the like.

  Further, the atmospheric pressure of the post-exposure bake is not particularly limited, and may be under reduced pressure or under increased pressure. Thereby, the pre-exposure baking can be performed relatively easily. Note that the normal pressure refers to a pressure of about 30 to 150 kPa, and is preferably atmospheric pressure.

[2-3] First development step S22
Next, the photosensitive resin layer 2510 is subjected to development processing. Thus, an opening 423 penetrating through the photosensitive resin layer 2510 is formed in a region corresponding to the light-shielding portion of the mask 412 (see FIG. 9E).
Examples of the developer include an organic developer and a water-soluble developer.

[2-4] First curing step S23
After the development processing, the photosensitive resin layer 2510 is subjected to a curing processing (a heat treatment after the development). The conditions for the curing treatment are not particularly limited, and the heating temperature is about 160 to 250 ° C. and the heating time is about 30 to 240 minutes. This makes it possible to cure the photosensitive resin layer 2510 while suppressing the thermal influence on the semiconductor chip 23, and obtain the organic insulating layer 251.

[2-5] Wiring layer forming step S24
Next, a wiring layer 253 is formed on the organic insulating layer 251 (see FIG. 9F). The wiring layer 253 is formed by, for example, obtaining a metal layer using a vapor deposition method such as a sputtering method or a vacuum evaporation method, and then patterning the metal layer by a photolithography method and an etching method.

  Note that a surface modification treatment such as a plasma treatment may be performed before the formation of the wiring layer 253.

[2-6] Second resin film disposing step S25
Next, as shown in FIG. 9G, a photosensitive resin layer 2520 is obtained in the same manner as in the first resin film disposing step S20. The photosensitive resin layer 2520 is disposed so as to cover the wiring layer 253.

  Thereafter, if necessary, the photosensitive resin layer 2520 is subjected to a heat treatment before exposure. The processing conditions are, for example, the conditions described in the first resin film disposing step S20.

[2-7] Second exposure step S26
Next, exposure processing is performed on the photosensitive resin layer 2520. The processing conditions are, for example, the conditions described in the first exposure step S21.

  After that, a post-exposure bake is performed on the photosensitive resin layer 2520 as necessary. The processing conditions are, for example, the conditions described in the first exposure step S21.

[2-8] Second developing step S27
Next, the photosensitive resin layer 2520 is subjected to development processing. The processing conditions are, for example, the conditions described in the first developing step S22. Thus, an opening 424 penetrating the photosensitive resin layers 2510 and 2520 is formed (see FIG. 9H).

[2-9] Second curing step S28
After the development, the photosensitive resin layer 2520 is subjected to a curing treatment (post-development heat treatment). The curing conditions are, for example, the conditions described in the first curing step S23. Thereby, the photosensitive resin layer 2520 is cured, and the organic insulating layer 252 is obtained (see FIG. 10I).

  In the present embodiment, the upper wiring layer 25 has two layers of the organic insulating layer 251 and the organic insulating layer 252, but may have three or more layers. In this case, after the second curing step S28, a series of steps from the wiring layer forming step S24 to the second curing step S28 may be repeatedly added.

[2-10] Through wiring forming step S29
Next, a through wiring 254 shown in FIG. 10I is formed in the opening 424.

  A known method is used for forming the through wiring 254, for example, the following method is used.

  First, a seed layer (not shown) is formed on the organic insulating layer 252. The seed layer is formed on the upper surface of the organic insulating layer 252 together with the inner surface (side surface and bottom surface) of the opening 424.

  As the seed layer, for example, a copper seed layer is used. The seed layer is formed by, for example, a sputtering method.

  Further, the seed layer may be made of the same metal as the through wiring 254 to be formed, or may be made of a different metal.

  Next, a resist layer (not shown) is formed on a region other than the opening 424 in the seed layer (not shown). Then, using the resist layer as a mask, the opening 424 is filled with metal. For this filling, for example, an electrolytic plating method is used. Examples of the metal to be filled include copper or copper alloy, aluminum or aluminum alloy, gold or gold alloy, silver or silver alloy, nickel or nickel alloy, and the like. Thus, the conductive material is embedded in the opening 424, and the through wiring 254 is formed.

Next, the resist layer (not shown) is removed. Further, a seed layer (not shown) on the organic insulating layer 252 is removed. For this, for example, a flash etching method can be used.
The formation location of the through wiring 254 is not limited to the illustrated position.

[3] Substrate peeling step S3
Next, as shown in FIG. 10J, the substrate 202 is peeled off. Thereby, the lower surface of the organic insulating layer 21 is exposed.

[4] Lower wiring layer forming step S4
Next, as shown in FIG. 10K, a lower wiring layer 24 is formed on the lower surface side of the organic insulating layer 21. The lower wiring layer 24 may be formed by any method, for example, in the same manner as in the upper wiring layer forming step S2 described above.

  The lower wiring layer 24 thus formed is electrically connected to the upper wiring layer 25 via the through wiring 221.

[5] Solder bump forming step S5
Next, as shown in FIG. 10L, a solder bump 26 is formed on the lower wiring layer 24. Further, a protective film such as a solder resist layer may be formed on the upper wiring layer 25 and the lower wiring layer 24 as necessary.
As described above, the through electrode substrate 2 is obtained.

  Note that the through electrode substrate 2 shown in FIG. 10L can be divided into a plurality of regions. Therefore, for example, by dividing the through electrode substrate 2 into individual pieces along the alternate long and short dash line shown in FIG. 10L, a plurality of through electrode substrates 2 can be efficiently manufactured. In addition, a diamond cutter etc. can be used for individualization, for example.

[6] Lamination step S6
Next, the semiconductor package 3 is arranged on the singulated through electrode substrate 2. Thus, the semiconductor device 1 shown in FIG. 5 is obtained.

  Such a method of manufacturing the semiconductor device 1 can be applied to a wafer-level process or a panel-level process using a large-area substrate. As a result, the manufacturing efficiency of the semiconductor device 1 can be increased and the cost can be reduced.

<Negative photosensitive resin composition>
Next, each component of the negative photosensitive resin composition (hereinafter, also simply referred to as “photosensitive resin composition”) according to the present embodiment will be described. In addition, the photosensitive resin composition of the present invention may be a varnish-like solution or a film-like solution.

  The photosensitive resin composition according to the present embodiment includes a thermosetting resin, a photopolymerization initiator as a photosensitizer, and a coupling agent containing an acid anhydride as a functional group. Such a photosensitive resin composition allows the organic insulating layer 21 having good adhesion to inorganic materials and metal materials such as the semiconductor chip 23, the through wirings 22, 221 and 222, and the wiring layer 253 by the action of the coupling agent. The formation becomes possible.

(Thermosetting resin)
The thermosetting resin preferably contains, for example, a semi-cured (solid) thermosetting resin at normal temperature (25 ° C.). Such a thermosetting resin is melted by being heated and pressed at the time of molding, and is cured while being formed into a desired shape. As a result, the organic insulating layers 21, 251 and 252 utilizing the properties of the thermosetting resin are obtained.

  Examples of the thermosetting resin include, for example, phenol novolak type epoxy resin, novolak type epoxy resin such as cresol novolak type epoxy resin, cresol naphthol type epoxy resin, biphenyl type epoxy resin, biphenyl aralkyl type epoxy resin, phenoxy resin, naphthalene skeleton Epoxy resin, bisphenol A epoxy resin, bisphenol A diglycidyl ether epoxy resin, bisphenol F epoxy resin, bisphenol F diglycidyl ether epoxy resin, bisphenol S diglycidyl ether epoxy resin, glycidyl ether epoxy resin, cresol Novolak type epoxy resin, aromatic polyfunctional epoxy resin, aliphatic epoxy resin, aliphatic polyfunctional epoxy resin, alicyclic epoxy resin, polyfunctional Epoxy resins such as cyclic epoxy resins; resins having a triazine ring such as urea (urea) resins and melamine resins; unsaturated polyester resins; maleimide resins such as bismaleimide compounds; polyurethane resins; diallyl phthalate resins; silicone resins; Oxazine resin; polyimide resin; polyamide imide resin; benzocyclobutene resin, cyanate ester resin such as cyanate resin such as novolak type cyanate resin, bisphenol A type cyanate resin, bisphenol E type cyanate resin, tetramethylbisphenol F type cyanate resin, and the like. No. In the case of thermosetting resins, one of them may be used alone, or two or more kinds having different weight average molecular weights may be used in combination. You may use together with a polymer.

Among them, as the thermosetting resin, a resin containing an epoxy resin is preferably used.
Examples of the epoxy resin include a polyfunctional epoxy resin having two or more epoxy groups in one molecule. Since a polyfunctional epoxy resin has a plurality of epoxy groups in one molecule, it has high reactivity with a photopolymerization initiator. Therefore, even when a relatively small amount and a short time of exposure treatment are performed on the resin film of the photosensitive resin composition, the resin film can be sufficiently cured. In addition, the polyfunctional epoxy resin may be used alone or in combination with a plurality of various thermosetting resins described above.

Further, as the epoxy resin, a trifunctional or higher polyfunctional epoxy resin may be used.
Although it does not specifically limit as a polyfunctional epoxy resin, For example, 2- [4- (2,3-epoxypropoxy) phenyl] -2- [4- [1,1-bis [4- (2,3-epoxy) Propoxy) phenyl] ethyl] phenyl] propane, phenol novolak type epoxy, tetrakis (glycidyloxyphenyl) ethane, α-2,3-epoxypropoxyphenyl-ω-hydropoly (n = 1 to 7) ｛2- (2,3) -Epoxypropoxy) benzylidene-2,3-epoxypropoxyphenylene}, 1-chloro-2,3-epoxypropane / formaldehyde / 2,7-naphthalenediol polycondensate, dicyclopentadiene-type epoxy resin and the like. These may be used alone or in combination of two or more.

  The thermosetting resin is, in particular, a phenol novolak epoxy resin, a cresol novolak epoxy resin, a triphenylmethane epoxy resin, a dicyclopentadiene epoxy resin, a bisphenol A epoxy resin, and a tetramethyl bisphenol F epoxy resin. It preferably contains at least one epoxy resin selected from the group consisting of: more preferably a polyfunctional epoxy resin; and still more preferably a polyfunctional aromatic epoxy resin. Since such a thermosetting resin is rigid, the organic insulating layers 21, 251, and 252 having good curability, high heat resistance, and a relatively low coefficient of thermal expansion can be obtained.

  The thermosetting resin preferably contains a resin that is solid at room temperature as described above, and may contain both a resin that is solid at room temperature and a resin that is liquid at room temperature. The photosensitive resin composition containing such a thermosetting resin has a good embedding property of the semiconductor chip 23 and the like, an improvement in tack (stickiness) when formed into a film, an organic insulating layer 21 which is a cured product, 251 and 252 can be compatible with each other. As a result, the flattened organic insulating layers 21, 251 and 252 having high mechanical strength can be obtained while suppressing generation of voids.

  When using a resin that is solid at room temperature and a resin that is liquid at room temperature, the amount of the resin that is liquid at room temperature is preferably about 5 to 150 parts by mass, based on 100 parts by mass of the resin that is solid at room temperature. It is more preferably about 100 parts by mass, and still more preferably about 15 to 80 parts by mass. If the ratio of the liquid resin is lower than the lower limit, there is a possibility that the embedding property of the semiconductor chip 23 in the photosensitive resin composition may be reduced, or the stability when formed into a film may be reduced. On the other hand, when the ratio of the liquid resin exceeds the upper limit, the tack when the photosensitive resin composition is formed into a film is deteriorated, and the mechanical strength of the cured organic insulating layers 21, 251, and 252 is reduced. Or may be done.

  Examples of the resin that is solid at room temperature include a phenol novolak epoxy resin, a cresol novolak epoxy resin, and a phenoxy resin.

  On the other hand, examples of resins that are liquid at room temperature include bisphenol A type epoxy resin, bisphenol F type epoxy resin, alkyl glycidyl ether, tetra (3,4-epoxycyclohexylmethyl) butanetetracarboxylate-modified ε-caprolactone, 3 ′, 4'-epoxycyclohexylmethyl 3,4-epoxycyclohexanecarboxylate, 2-ethylhexyl glycidyl ether, trimethylolpropane polyglycidyl ether and the like. These may be used alone or in combination of two or more.

  Further, the resin that is liquid at normal temperature preferably contains both an aromatic compound and an aliphatic compound. The photosensitive resin composition containing such a compound imparts appropriate flexibility mainly when formed into a film with an aliphatic compound, and retains shape when the film is formed mainly with an aromatic compound. Is given. As a result, a photosensitive resin film having both flexibility and shape retention can be obtained.

  Furthermore, by containing both a resin that is solid at room temperature and a resin that is liquid at room temperature, or a resin that is liquid at room temperature containing both an aromatic compound and an aliphatic compound, the cured product of the photosensitive resin composition In the above, the glass transition temperature can be increased without impairing the patterning property, or the linear expansion coefficient can be lowered without impairing the patterning property.

  With respect to 100 parts by mass of the aromatic compound, the amount of the aliphatic compound is preferably about 5 to 150 parts by mass, more preferably about 10 to 80 parts by mass, and about 15 to 50 parts by mass. Is more preferred. If the ratio of the aliphatic compound is below the lower limit, the flexibility of the film may be reduced depending on the composition of the photosensitive resin composition and the like. On the other hand, when the ratio of the aliphatic compound exceeds the upper limit, the shape retention of the film may be reduced depending on the composition of the photosensitive resin composition and the like.

  The content of the epoxy resin is not particularly limited, but is preferably about 40 to 80% by mass, more preferably about 45 to 75% by mass, and more preferably 50 to 70% by mass of the entire solid content of the photosensitive resin composition. It is more preferable that the amount is about mass%. By setting the content of the epoxy resin within the above range, the patterning properties of the photosensitive resin layers 210, 2510, and 2520 containing the photosensitive resin composition can be improved, and the heat resistance of the organic insulating layers 21, 251 and 252 can be improved. The mechanical strength can be sufficiently increased.

  In addition, the solid content of the photosensitive resin composition refers to a non-volatile content in the photosensitive resin composition, and refers to a residue other than volatile components such as water and a solvent. Further, in the present embodiment, the content of the photosensitive resin composition with respect to the entire solid content, when a solvent is contained, refers to the content of the photosensitive resin composition with respect to the entire solid content excluding the solvent.

(Curing agent)
Moreover, the photosensitive resin composition of the present invention may contain a curing agent. The curing agent is not particularly limited as long as it accelerates the polymerization reaction of the thermosetting resin. For example, when the thermosetting resin contains an epoxy resin, a curing agent having a phenolic hydroxyl group is used. Specifically, a phenol resin can be used.

  Examples of the phenol resin include a novolak phenol resin, a resol phenol resin, a trisphenylmethane phenol resin, an arylalkylene phenol resin, and the like. Among these, a novolak type phenol resin is particularly preferably used. Thereby, photosensitive resin layers 210, 2510, and 2520 having good curability and good development characteristics can be obtained.

  The addition amount of the curing agent is not particularly limited, but is preferably 25 parts by mass or more and 100 parts by mass or less, more preferably 30 parts by mass or more and 90 parts by mass or less, and more preferably 35 parts by mass or less with respect to 100 parts by mass of the resin. It is more preferable that the amount be not less than 80 parts by mass and not more than 80 parts by mass. By setting the addition amount of the curing agent within the above range, the organic insulating layer 21 having high heat resistance and a relatively low coefficient of thermal expansion can be obtained.

(Thermoplastic resin)
Further, the photosensitive resin composition may further contain a thermoplastic resin. Thereby, the moldability of the photosensitive resin composition can be further improved, and the flexibility of the cured product of the photosensitive resin composition can be further improved. As a result, the organic insulating layers 21, 251, and 252 in which thermal stress and the like are hardly generated are obtained.

  Examples of the thermoplastic resin include a phenoxy resin, an acrylic resin, a polyamide resin (eg, nylon), a thermoplastic urethane resin, a polyolefin resin (eg, polyethylene, polypropylene), a polycarbonate, a polyester resin (eg, polyethylene terephthalate). , Polybutylene terephthalate, etc.), polyacetal, polyphenylene sulfide, polyether ether ketone, liquid crystal polymer, fluororesin (eg, polytetrafluoroethylene, polyvinylidene fluoride, etc.), modified polyphenylene ether, polysulfone, polyether sulfone, polyarylate, polyamide Examples include imide, polyetherimide, and thermoplastic polyimide. In the photosensitive resin composition, one of these may be used alone, or two or more having different weight average molecular weights may be used in combination, and one or two or more thereof may be used. You may use together with a prepolymer.

  Of these, a phenoxy resin is preferably used as the thermoplastic resin. The phenoxy resin is also called a polyhydroxy polyether and has a feature of a higher molecular weight than an epoxy resin. By including such a phenoxy resin, it is possible to suppress a decrease in flexibility of a cured product of the photosensitive resin composition.

  Examples of the phenoxy resin include bisphenol A type phenoxy resin, bisphenol F type phenoxy resin, copolymerized phenoxy resin of bisphenol A type and bisphenol F type, biphenyl type phenoxy resin, bisphenol S type phenoxy resin, biphenyl type phenoxy resin and bisphenol A phenoxy resin copolymerized with an S-type phenoxy resin, and the like, and one or a mixture of two or more thereof are used.

  Among these, a bisphenol A type phenoxy resin or a copolymerized phenoxy resin of bisphenol A type and bisphenol F type is preferably used.

  Further, as the phenoxy resin, those having epoxy groups at both ends of the molecular chain are preferably used. According to such a phenoxy resin, when an epoxy resin is used as the thermosetting resin, it is possible to impart excellent solvent resistance and heat resistance to a cured product of the photosensitive resin composition.

  Further, as the phenoxy resin, those which are solid at ordinary temperature are preferably used. Specifically, a phenoxy resin having a nonvolatile content of 90% by mass or more is preferably used. By using such a phenoxy resin, the mechanical properties of the cured product can be improved.

  The weight average molecular weight of the thermoplastic resin is not particularly limited, but is preferably about 10,000 to 100,000, and more preferably about 20,000 to 80,000. By using such a relatively high-molecular-weight thermoplastic resin, it is possible to impart good flexibility to the cured product and to impart sufficient solubility in a solvent.

  The weight average molecular weight of the thermoplastic resin is measured, for example, as a polystyrene equivalent value by gel permeation chromatography (GPC).

  The addition amount of the thermoplastic resin is not particularly limited, but is preferably 10 parts by mass or more and 90 parts by mass or less, more preferably 15 parts by mass or more and 80 parts by mass or less based on 100 parts by mass of the thermosetting resin. More preferably, it is 20 parts by mass or more and 70 parts by mass or less. By setting the addition amount of the thermoplastic resin within the above range, the balance of the mechanical properties of the cured product of the photosensitive resin composition can be increased.

  If the amount of the thermoplastic resin is less than the lower limit, depending on the components contained in the photosensitive resin composition and the mixing ratio thereof, sufficient flexibility may not be provided to the cured product of the photosensitive resin composition. There is. On the other hand, if the amount of the thermoplastic resin exceeds the upper limit, depending on the components contained in the photosensitive resin composition and the compounding ratio thereof, the mechanical strength of the cured product of the photosensitive resin composition may be reduced. .

(Photosensitive agent)
As the photosensitive agent, for example, a photoacid generator can be used. The photoacid generator contains the photoacid generator that generates an acid upon irradiation with actinic rays such as ultraviolet rays and functions as a photopolymerization initiator for the curable resin described above.

  Examples of the photoacid generator include onium salt compounds. Specifically, diazonium salts, iodonium salts such as diaryliodonium salts, sulfonium salts such as triarylsulfonium salts, triarylbilium salts, benzylpyridinium thiocyanate, dialkylphenacylsulfonium salts, dialkylhydroxyphenylphosphonium salts such as And a cationic photopolymerization initiator.

In addition, since a photosensitive composition contacts metal, the thing which does not generate | occur | produce hydrogen fluoride by decomposition | disassembly like a methide salt type or a borate salt type is preferable.
In particular, it is preferable to use a triarylsulfonium salt having a borate anion as a counter anion as a photosensitive agent. Such a triarylsulfonium salt contains a borate anion having low corrosiveness to a metal as a counter anion, so that the metal materials such as the through wirings 22, 221 and 222 and the wiring layer 253 are not corroded for a longer time. Can be prevented. As a result, the reliability of the semiconductor device 1 can be further improved.

  The amount of the photosensitizer is not particularly limited, but is preferably about 0.3 to 5% by mass, and more preferably about 0.5 to 4.5% by mass of the entire solid content of the photosensitive resin composition. More preferably, it is even more preferably about 1 to 4% by mass. By setting the addition amount of the photosensitive agent within the above range, the patterning properties of the photosensitive resin layers 210, 2510, and 2520 containing the photosensitive resin composition are improved, and the long-term storage property of the photosensitive resin composition is improved. be able to.

  The photosensitive agent may be one that imparts negative-type photosensitivity to the photosensitive resin composition, or may be one that imparts positive-type photosensitivity to the photosensitive resin composition. In view of the fact that can be formed with high accuracy, the negative type is preferable.

(Coupling agent)
The photosensitive resin composition according to the present embodiment has a coupling agent containing an acid anhydride as a functional group. Such a photosensitive resin composition enables formation of a resin film having good adhesion to an inorganic material and a metal material. Thereby, for example, the organic insulating layers 21, 251 and 252 having good adhesion to the through wirings 22, 221 and 222, the wiring layer 253 and the semiconductor chip 23 are obtained.

  In such an acid anhydride-containing coupling agent, the acid anhydride as a functional group dissolves the inorganic oxide and coordinates with a cation (eg, a metal cation).

  On the other hand, the alkoxy group contained in the acid anhydride-containing coupling agent is hydrolyzed to, for example, silanol. This silanol forms a hydrogen bond with the surface hydroxyl group of the inorganic material.

  Therefore, it is considered that a photosensitive resin composition having good adhesion to inorganic materials and metal materials can be obtained based on these bonding mechanisms.

  As the coupling agent, a coupling agent containing an acid anhydride as a functional group (hereinafter, also abbreviated as “anhydride-containing coupling agent”) is used.

  Specifically, a compound containing an alkoxysilyl group is preferably used, and an alkylcarboxylic anhydride containing an alkoxysilyl group is preferably used. According to such a coupling agent, a photosensitive resin composition having better adhesion to an inorganic material and a metal material, good sensitivity, and excellent patterning properties can be obtained.

  Specific examples of the compound containing an alkoxysilyl group include 3-trimethoxysilylpropyl succinic anhydride, 3-triethoxysilylpropyl succinic anhydride, 3-dimethylmethoxysilylpropyl succinic anhydride, and 3-dimethylethoxy. Succinic anhydrides such as silylpropylsuccinic anhydride, 3-trimethoxysilylpropylcyclohexyldicarboxylic anhydride, 3-triethoxysilylpropylcyclohexyldicarboxylic anhydride, 3-dimethylmethoxysilylpropylcyclohexyldicarboxylic anhydride, Dicarboxylic anhydrides such as 3-dimethylethoxysilylpropylcyclohexyldicarboxylic anhydride, 3-trimethoxysilylpropylphthalic anhydride, 3-triethoxysilylpropylphthalic anhydride, 3-dimethylmethoxy Lil propyl phthalic anhydride, alkoxysilyl group-containing alkyl carboxylic acid anhydride such as phthalic anhydride, such as 3-dimethyl-ethoxysilylpropyl phthalic anhydride. These may be used alone or in combination of two or more.

  Among these, succinic anhydride containing an alkoxysilyl group is preferably used, and 3-trimethoxysilylpropylsuccinic anhydride is particularly preferably used. According to such a coupling agent, the molecular length and the molecular structure are optimized, so that the above-mentioned adhesion and patterning properties are further improved.

  Here, the silane coupling agent is listed, but a titanium coupling agent, a zirconium coupling agent, or the like may be used.

  The amount of the acid anhydride-containing coupling agent to be added is not particularly limited, but is preferably about 0.3 to 5% by mass, and preferably 0.5 to 4.5% by mass of the entire solid content of the photosensitive resin composition. Is more preferable, and more preferably about 1 to 4% by mass. By setting the addition amount of the acid anhydride-containing coupling agent within the above range, adhesion to inorganic materials and metal materials such as the through wirings 22, 221 and 222, the wiring layer 253 and the semiconductor chip 23 is particularly good. Organic insulating layers 21, 251 and 252 are obtained. This contributes to the realization of a highly reliable semiconductor device 1 such that the insulating properties of the organic insulating layers 21, 251 and 252 are maintained for a long time.

  When the amount of the acid anhydride-containing coupling agent is less than the lower limit, the adhesion to the inorganic material and the metal material may be reduced depending on the composition of the acid anhydride-containing coupling agent. On the other hand, when the amount of the acid anhydride-containing coupling agent exceeds the upper limit, depending on the composition of the acid anhydride-containing coupling agent, the photosensitivity and mechanical properties of the photosensitive resin composition may be reduced. is there.

  Further, in addition to such an acid anhydride-containing coupling agent, another coupling agent may be further added.

  As other coupling agents, for example, coupling agents having an amino group, an epoxy group, an acryl group, a methacryl group, a mercapto group, a vinyl group, a ureide group, a sulfide group or the like as a functional group can be mentioned. These may be used alone or in combination of two or more.

  Among them, examples of the coupling agent containing an amino group include bis (2-hydroxyethyl) -3-aminopropyltriethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, and γ-aminopropylmethyl. Diethoxysilane, γ-aminopropylmethyldimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-β (aminoethyl) γ -Aminopropylmethyldimethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldiethoxysilane, N-phenyl-γ-amino-propyltrimethoxysilane and the like.

  Examples of the epoxy group-containing coupling agent include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidylpropyl Trimethoxysilane and the like.

  Examples of the acryl group-containing coupling agent include γ- (methacryloxypropyl) trimethoxysilane, γ- (methacryloxypropyl) methyldimethoxysilane, γ- (methacryloxypropyl) methyldiethoxysilane, and the like.

  Examples of the mercapto group-containing coupling agent include 3-mercaptopropyltrimethoxysilane.

  Examples of the vinyl group-containing coupling agent include vinyl tris (β-methoxyethoxy) silane, vinyl triethoxy silane, vinyl trimethoxy silane, and the like.

  Examples of the ureido group-containing coupling agent include 3-ureidopropyltriethoxysilane.

  Examples of the sulfide group-containing coupling agent include bis (3- (triethoxysilyl) propyl) disulfide, bis (3- (triethoxysilyl) propyl) tetrasulfide, and the like.

  The amount of the other coupling agent to be added is not particularly limited, but is preferably about 1 to 200% by mass of the acid anhydride-containing coupling agent, more preferably about 3 to 150% by mass, and More preferably, it is about 100% by mass. By setting the amount to be added within this range, another effect is added by adding another coupling agent without impairing the above-described effect of the acid anhydride-containing coupling agent. As a result, it is possible to achieve both effects provided by both coupling agents.

(Other additives)
Other additives may be added to the photosensitive resin composition as needed. Examples of the other additives include an antioxidant, a filler such as silica, a surfactant, a sensitizer, and a film-forming agent.

  Examples of the surfactant include a fluorine-based surfactant, a silicon-based surfactant, an alkyl-based surfactant, and an acrylic-based surfactant.

(solvent)
The photosensitive resin composition may contain a solvent. As the solvent, any solvent can be used without particular limitation as long as it can dissolve each component of the photosensitive resin composition and does not react with each component.

  Examples of the solvent include acetone, methyl ethyl ketone, toluene, propylene glycol methyl ethyl ether, propylene glycol dimethyl ether, propylene glycol 1-monomethyl ether 2-acetate, diethylene glycol ethyl methyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, and benzyl alcohol. Propylene carbonate, ethylene glycol diacetate, propylene glycol diacetate, propylene glycol monomethyl ether acetate, and the like. These may be used alone or in combination of two or more.

<Photosensitive resin varnish>
The photosensitive resin composition may be in the form of a varnish.

  The varnish-like photosensitive resin composition is prepared, for example, by uniformly mixing the raw material and the solvent. In addition, a solvent is added as needed, and it is also possible to form a varnish without using a solvent. After that, it may be subjected to processes such as filtration with a filter and defoaming.

  The solid content concentration in the varnish-shaped photosensitive resin composition is not particularly limited, but is preferably about 20 to 80% by mass. The varnish-shaped photosensitive resin composition having such a solid content concentration has a good fluidity that is easy to penetrate into narrow gaps because the viscosity is optimized, and is hard to cause film breakage. It becomes.

<Photosensitive resin film>
Next, the photosensitive resin film according to the present embodiment will be described.

  As described above, the photosensitive resin film may be formed by forming the photosensitive resin composition into a film, or may be a film obtained by applying the photosensitive resin composition to a carrier film.

  Examples of the latter method for producing a photosensitive resin film include a method in which a varnish-like photosensitive resin composition is applied on a carrier film and then dried.

  Examples of the coating device include a spin coater, a spray device, and an ink jet device.

  The content of the solvent in the photosensitive resin film is not particularly limited, but is preferably 10% by mass or less based on the entire photosensitive resin film. Thereby, the tackiness of the photosensitive resin film can be improved and the curability of the photosensitive resin film can be improved. Further, generation of voids due to volatilization of the solvent can be suppressed.

  The drying conditions include, for example, heating at a temperature of 80 to 150 ° C. for 5 to 30 minutes.

  The photosensitive resin film laminated on the carrier film is useful from the viewpoint of handleability, surface cleanliness, and the like. At this time, the carrier film may be in the form of a roll that can be wound up, or may be in the form of a single sheet.

  Examples of the constituent material of the carrier film include a resin material and a metal material. Among these, examples of the resin material include polyolefins such as polyethylene and polypropylene, polyesters such as polyethylene terephthalate and polybutylene terephthalate, polycarbonate, silicone, fluorine-based resins, and polyimide-based resins. In addition, examples of the metal material include copper or copper alloy, aluminum or aluminum alloy, iron or iron alloy, and the like.

  Among these, a carrier film containing polyester is preferably used. Such a carrier film favorably supports the photosensitive resin film and has relatively good ease of peeling.

  Further, a cover film may be provided on the surface of the photosensitive resin film as needed. This cover film protects the surface of the photosensitive resin film until the sticking operation.

  The constituent material of the cover film is appropriately selected from those listed as constituent materials of the carrier film, but a cover film containing polyester is preferably used from the viewpoint of protection and ease of peeling.

<Electronic equipment>
The electronic apparatus according to the embodiment includes the semiconductor device according to the embodiment described above.

  Such a semiconductor device has high reliability because it has a protective film having excellent chemical resistance. Therefore, high reliability is also provided to the electronic device according to the present embodiment.

  The electronic device according to the present embodiment is not particularly limited as long as it includes such a semiconductor device. For example, mobile phones, smartphones, tablet terminals, information devices such as personal computers, servers, and communication devices such as routers , A vehicle control computer, an in-vehicle device such as a car navigation system, and the like.

  As described above, the present invention has been described based on the illustrated embodiments, but the present invention is not limited thereto.

  For example, the photosensitive resin composition, the semiconductor device, and the electronic device of the present invention may be obtained by adding arbitrary elements to the above-described embodiment.

  In addition to the semiconductor device, the photosensitive resin composition and the photosensitive resin film are used for forming structures of MEMS (Micro Electro Mechanical Systems) and various sensors, and for forming structures of display devices such as liquid crystal display devices and organic EL devices. It is also applicable to materials and the like.

Next, specific examples of the present invention will be described.
1. Preparation of photosensitive resin composition (Example 1)
First, the raw materials shown in Tables 1 and 2 were dissolved in propylene glycol monomethyl ether acetate (PGMEA) to prepare solutions.

  Next, the prepared solution was filtered through a polypropylene filter having a pore size of 0.2 μm to obtain a negative photosensitive resin composition.

(Examples 2 to 11)
A photosensitive resin composition was obtained in the same manner as in Example 1, except that the raw materials were changed as shown in Tables 1 and 2.

(Comparative Examples 1-4)
A photosensitive resin composition was obtained in the same manner as in Example 1, except that the raw materials were changed as shown in Tables 1 and 2.

2. 2. Evaluation of Photosensitive Resin Composition 2.1 Preparation of Test Piece First, a silicon wafer having a size of 8 inches and a thickness of 725 μm was prepared.

  Next, a varnish-like photosensitive resin composition was applied on a silicon wafer by a spin coater. Thus, a liquid coating having a thickness of 10 μm was obtained.

Next, the liquid coating was dried on a hot plate at 120 ° C. for 5 minutes to obtain a coating.
Next, the entire surface of the obtained coating film was exposed at 700 mJ / cm ² .

Next, the exposed coating film was subjected to PEB (Post Exposure Bake) at 70 ° C. for 5 minutes.
Next, it was heated at 200 ° C. for 90 minutes to obtain a test piece having a cured film.

2.2 Adhesion test 2.2.1 Silicon adhesion test (normal temperature)
Next, the obtained test piece was subjected to an adhesion test according to the cross cut method specified in JIS K 5600-5-6: 1999 as follows.

  First, a cut was made in the photosensitive resin film using a tool. The cuts were made at 1 mm intervals vertically and horizontally 10 times so as to penetrate the photosensitive resin film. As a result, a total of 100 1 mm squares were formed from the photosensitive resin film.

Next, a cellophane adhesive tape was attached so as to overlap these 100 squares. Then, the cellophane adhesive tape was peeled off, and the number of peeling out of the 100 squares was counted.
Table 2 shows the counted results.

2.2.2 Silicon adhesion test (high temperature)
After placing the obtained test piece under high temperature and high humidity under the following conditions, an adhesion test was performed in the same manner as in 2.2.1. Table 2 shows the evaluation results.

・ Temperature 85 ℃
・ 85% relative humidity
・ Test time: 24 hours

2.2.3 Copper adhesion test (normal temperature)
2. Adhesion at room temperature in the same manner as in 2.2.1, except that the silicon wafer of 2.1 was subjected to a base treatment with Ti, and then a test piece was used which was changed to a silicon wafer on which copper having a thickness of 300 nm was deposited. The test was performed. Table 2 shows the evaluation results.

2.2.4 Copper adhesion test (high temperature)
2. Adhesion at a high temperature in the same manner as in 2.2.2, except that a test piece was used in which the silicon wafer of 2.1 was subjected to a base treatment with Ti and then changed to a silicon wafer on which copper having a thickness of 300 nm was vapor-deposited. The test was performed. Table 2 shows the evaluation results.

2.3 Evaluation of patterning property First, as shown in 2.1, a varnish-shaped photosensitive resin composition was applied on a silicon wafer by a spin coater. Thus, a liquid coating having a thickness of 10 μm was obtained.

Next, the liquid coating was dried on a hot plate at 120 ° C. for 5 minutes to obtain a coating.
Next, the coating film was exposed to light through a negative pattern mask using an i-line stepper (NSR-4425i, manufactured by Nikon Corporation). Thereafter, a post-exposure bake was performed at 70 ° C. for 5 minutes.

  Next, using propylene glycol monomethyl ether acetate (PGMEA) at 25 ° C. as a developing solution, unexposed portions were dissolved and removed by spray development, and then rinsed with isopropyl alcohol (IPA).

  Next, it was visually confirmed whether or not patterning was possible, and the patterning property was evaluated according to the following evaluation criteria.

<Evaluation criteria for patterning properties>
：: A pattern could be obtained by dissolving the unexposed portion. X: A pattern could not be obtained by total dissolution or insolubility. Table 2 shows the evaluation results.

  As is clear from Table 2, it was found that the photosensitive resin films obtained in the examples exhibited good adhesion to inorganic materials and metal materials.

  The negative photosensitive resin composition of the present invention contains a thermosetting resin, a photopolymerization initiator, and a coupling agent containing an acid anhydride as a functional group. By using a coupling agent containing an acid anhydride as a functional group, the resin film formed of the negative photosensitive resin composition adheres to a semiconductor chip formed of an inorganic material or a metal material or various metal wirings. The property becomes good. Therefore, the reliability of a semiconductor device using such a negative photosensitive resin composition can be improved. Therefore, the present invention has industrial applicability.

Claims (10)

A thermosetting resin containing a solid component at room temperature,
A photopolymerization initiator,
A coupling agent containing an acid anhydride as a functional group, only contains,
The component that is solid at room temperature is a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, a triphenylmethane type epoxy resin, a dicyclopentadiene type epoxy resin, a bisphenol A type epoxy resin, and a tetramethyl bisphenol F type epoxy resin. A negative photosensitive resin composition comprising at least one selected from the group consisting of:   The negative photosensitive resin composition according to claim 1, wherein the thermosetting resin includes a polyfunctional epoxy resin.   The negative photosensitive resin composition according to claim 2, wherein the content of the polyfunctional epoxy resin is 40 to 80% by mass based on a nonvolatile component of the photosensitive resin composition.   The negative photosensitive resin composition according to any one of claims 1 to 3, wherein the coupling agent is a compound containing an alkoxysilyl group.   The negative photosensitive resin composition according to any one of claims 1 to 4, wherein the acid anhydride is succinic anhydride. The negative photosensitive resin composition further seen including a solvent, a negative type photosensitive resin composition according to any one of claims 1 to 5 is dissolved in the solvent form a varnish-like. The negative photosensitive material according to claim 6, wherein the component that is solid at room temperature is at least one selected from the group consisting of a phenol novolak epoxy resin, a cresol novolak epoxy resin, and a triphenylmethane epoxy resin . Resin composition. A semiconductor chip,
A resin film comprising a cured product of the negative photosensitive resin composition according to any one of claims 1 to 7, wherein the resin film is provided on the semiconductor chip.
A semiconductor device comprising:   9. The semiconductor device according to claim 8, wherein a redistribution layer electrically connected to the semiconductor chip is buried in the resin film.   An electronic apparatus comprising the semiconductor device according to claim 8.

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