JP6627632B2 - マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 - Google Patents

マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 Download PDF

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Publication number
JP6627632B2
JP6627632B2 JP2016083002A JP2016083002A JP6627632B2 JP 6627632 B2 JP6627632 B2 JP 6627632B2 JP 2016083002 A JP2016083002 A JP 2016083002A JP 2016083002 A JP2016083002 A JP 2016083002A JP 6627632 B2 JP6627632 B2 JP 6627632B2
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pixel
charged particle
area
particle beam
irradiation
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JP2016083002A
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Japanese (ja)
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JP2017143235A (ja
Inventor
加藤　靖雄
靖雄 加藤
英郎 井上
英郎 井上
裕史 松本
裕史 松本
亮 川名
亮 川名
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Nuflare Technology Inc
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Nuflare Technology Inc
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Priority to TW106102665A priority Critical patent/TWI645258B/zh
Priority to US15/423,013 priority patent/US9852876B2/en
Priority to KR1020170016757A priority patent/KR101942069B1/ko
Publication of JP2017143235A publication Critical patent/JP2017143235A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
JP2016083002A 2016-02-08 2016-04-18 マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 Active JP6627632B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW106102665A TWI645258B (zh) 2016-02-08 2017-01-24 多重帶電粒子束描繪裝置及多重帶電粒子束描繪方法
US15/423,013 US9852876B2 (en) 2016-02-08 2017-02-02 Multi charged particle beam writing apparatus and multi charged particle beam writing method
KR1020170016757A KR101942069B1 (ko) 2016-02-08 2017-02-07 멀티 하전 입자빔 묘화 장치 및 멀티 하전 입자빔 묘화 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016022040 2016-02-08
JP2016022040 2016-02-08

Publications (2)

Publication Number Publication Date
JP2017143235A JP2017143235A (ja) 2017-08-17
JP6627632B2 true JP6627632B2 (ja) 2020-01-08

Family

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JP2016083002A Active JP6627632B2 (ja) 2016-02-08 2016-04-18 マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法

Country Status (3)

Country Link
JP (1) JP6627632B2 (zh)
KR (1) KR101942069B1 (zh)
TW (1) TWI645258B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6934742B2 (ja) 2017-04-19 2021-09-15 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP7196792B2 (ja) * 2019-07-11 2022-12-27 株式会社ニューフレアテクノロジー マルチビーム描画方法及びマルチビーム描画装置
US11869746B2 (en) 2019-07-25 2024-01-09 Nuflare Technology, Inc. Multi-beam writing method and multi-beam writing apparatus
JP7310466B2 (ja) * 2019-09-10 2023-07-19 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム評価方法
JP7388237B2 (ja) * 2020-02-20 2023-11-29 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP2023042359A (ja) 2021-09-14 2023-03-27 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007115891A (ja) * 2005-10-20 2007-05-10 Hitachi High-Technologies Corp 露光量補正方法および電子線露光装置
JP5801288B2 (ja) * 2009-05-20 2015-10-28 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフ処理のための２レベルパターンを発生する方法およびその方法を使用するパターン発生器
JP5826566B2 (ja) * 2011-09-01 2015-12-02 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6289181B2 (ja) * 2013-06-26 2018-03-07 キヤノン株式会社 描画装置、及び、物品の製造方法
JP6353278B2 (ja) * 2014-06-03 2018-07-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置

Also Published As

Publication number Publication date
JP2017143235A (ja) 2017-08-17
KR20170094091A (ko) 2017-08-17
TW201738663A (zh) 2017-11-01
TWI645258B (zh) 2018-12-21
KR101942069B1 (ko) 2019-01-24

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