JP6621426B2 - Iii−vチャネルを形成する方法 - Google Patents
Iii−vチャネルを形成する方法 Download PDFInfo
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- JP6621426B2 JP6621426B2 JP2016574889A JP2016574889A JP6621426B2 JP 6621426 B2 JP6621426 B2 JP 6621426B2 JP 2016574889 A JP2016574889 A JP 2016574889A JP 2016574889 A JP2016574889 A JP 2016574889A JP 6621426 B2 JP6621426 B2 JP 6621426B2
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- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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Description
Claims (15)
- 半導体デバイスの生産方法であって、
基板の表面を露出させるために、前記基板上に形成された誘電体層内に第1トレンチを形成することと、
前記第1トレンチの内部に多重積層構造物を形成することであって、
前記基板の前記表面を覆って第1半導体化合物層を形成すること、
前記第1半導体化合物層の上に第2半導体化合物層を形成すること、及び、
前記第2半導体化合物層の上に第3半導体化合物層を形成することを含み、前記第2半導体化合物層はエッチング剤に対して、前記第1半導体化合物層及び前記第3半導体化合物層のエッチング耐性よりも低いエッチング耐性を有する、多重積層構造物を形成することと、
少なくとも前記第2半導体化合物層及び前記第3半導体化合物層を部分的に露出させるために、前記誘電体層内に、前記第1トレンチの方向に対して垂直な方向に延びる第2トレンチを形成することと、
前記第1半導体化合物層が空隙によって前記第3半導体化合物層から分離されるように、前記第2半導体化合物層を選択的に除去することとを含む、生産方法。 - 前記第1、第2及び第3半導体化合物層は、III−V族半導体化合物、II−VI族半導体化合物、II−VI族又はIII−V族からの二元化合物、II−VI族又はIII−V族からの三元化合物、II−VI族又はIII−V族からの四元化合物、或いはこれらの混合物又は組み合わせで形成される、請求項1に記載の生産方法。
- 前記第1半導体化合物層は、InAlAs、InP、InGaAs、InAs、InSb、GaAs、AlAs、又はGaSbを含む、請求項2に記載の生産方法。
- 前記第2半導体化合物層はAlAsSb、InAlAs、AlGaAs、InP、又はInAlSbを含み、前記第3半導体化合物層はInAs、InGaAs、InGaSb、InP、InAlSb、又はGaSbを含む、請求項2に記載の生産方法。
- 前記第3半導体化合物層はInGaAsであり、前記第2半導体化合物層はInAlAsである、請求項2に記載の生産方法。
- 前記第2半導体化合物層を選択的に除去することは、前記第2トレンチの内部に露出した前記第2半導体化合物層のみを除去する、請求項1に記載の生産方法。
- 前記第2トレンチの内部に露出した前記第3半導体化合物層の周囲全体にゲート誘電体層を形成することと、
前記ゲート誘電体層の露出面の少なくとも一部分の周囲全体に金属ゲートを形成することとを更に含む、請求項1に記載の生産方法。 - 半導体デバイスであって、
基板の表面上に配置された第1誘電体区域であって、前記第1誘電体区域の上面から上方に延びた2つの対向する部分を有し、前記2つの対向する部分はその間に第1トレンチを画定している、第1誘電体区域と、
前記基板の前記表面上に配置された第2誘電体区域であって、前記第2誘電体区域の上面から上方に延びた2つの対向する部分を有し、前記2つの対向する部分はその間に第2トレンチを画定している、第2誘電体区域と、
前記第1誘電体区域と前記第2誘電体区域との間に前記基板の前記表面を覆って配置された、第1の半導体化合物層と、
前記第1の半導体化合物層の上方に配置され、かつ、空隙によって前記第1の半導体化合物層から分離された第2の半導体化合物層であって、前記第2の半導体化合物層の両端部は、前記第1誘電体区域の前記2つの対向する部分と、前記第2誘電体区域の前記2つの対向する部分との間に支持されている、第2の半導体化合物層と、
前記両端部の間の前記第2の半導体化合物層の露出面を包み込む、ゲート誘電体層と、
前記ゲート誘電体層の少なくとも一部分の周囲全体に配置された、金属ゲートとを備える、半導体デバイス。 - 前記空隙は、前記第2の半導体化合物層の厚さの2倍の高さを有する、請求項8に記載の半導体デバイス。
- 前記第2の半導体化合物層の前記露出面は、前記第1トレンチ及び前記第2トレンチを通じて大気に曝露されている、請求項8に記載の半導体デバイス。
- 前記第1及び第2の半導体化合物層は、III−V族半導体化合物、II−VI族半導体化合物、II−VI族又はIII−V族からの二元化合物、II−VI族又はIII−V族からの三元化合物、II−VI族又はIII−V族からの四元化合物、或いはこれらの混合物又は組み合わせで形成される、請求項8に記載の半導体デバイス。
- 前記第1の半導体化合物層はInAlAs、InP、InGaAs、InAs、InSb、GaAs、AlAs、又はGaSbを含み、前記第2の半導体化合物層はInAs、InGaAs、AlGaAs、InP、InGaSb、又はAlSbを含む、請求項11に記載の半導体デバイス。
- 半導体デバイスの生産方法であって、
基板上に配置された誘電体層内に第1トレンチを形成して、前記第1トレンチの内部に前記基板の表面を露出させることと、
前記第1トレンチの内部に、前記基板の前記表面を覆って第1半導体化合物層を形成することと、
前記第1半導体化合物層の上に第2半導体化合物層を形成することと、
前記第2半導体化合物層の上に第3半導体化合物層を形成することであって、前記第2半導体化合物層はエッチング剤に対して、前記第1半導体化合物層及び前記第3半導体化合物層のエッチング耐性よりも低いエッチング耐性を有する、第3半導体化合物層を形成することと、
少なくとも前記第2半導体化合物層及び前記第3半導体化合物層を部分的に露出させるために、前記誘電体層内に、前記第1トレンチの方向に対して垂直な方向に延びる第2トレンチを形成することと、
前記第1半導体化合物層が空隙によって前記第3半導体化合物層から分離されるように、前記第2半導体化合物層を選択的に除去することとを含み、
前記第1、第2及び第3半導体化合物層は、III−V族半導体化合物、II−VI族半導体化合物、II−VI族又はIII−V族からの二元化合物、II−VI族又はIII−V族からの三元化合物、II−VI族又はIII−V族からの四元化合物、及びこれらの混合物又は組み合わせから成る群から選択される、
生産方法。 - 前記第2トレンチの内部に露出した前記第3半導体化合物層の周囲全体にゲート誘電体層を形成することと、
前記ゲート誘電体層の露出面の少なくとも一部分の周囲全体に金属ゲートを形成することとを更に含む、請求項13に記載の生産方法。 - 前記第2半導体化合物層を選択的に除去することは、前記第2トレンチの内部に露出した前記第2半導体化合物層のみを除去する、請求項13に記載の生産方法。
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US14/313,086 US9293523B2 (en) | 2014-06-24 | 2014-06-24 | Method of forming III-V channel |
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PCT/US2015/032452 WO2015199862A1 (en) | 2014-06-24 | 2015-05-26 | A method of forming iii-v channel |
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