JP6610696B2 - トレンチｍｏｓ型半導体装置 - Google Patents

トレンチｍｏｓ型半導体装置 Download PDF

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JP6610696B2
JP6610696B2 JP2018071431A JP2018071431A JP6610696B2 JP 6610696 B2 JP6610696 B2 JP 6610696B2 JP 2018071431 A JP2018071431 A JP 2018071431A JP 2018071431 A JP2018071431 A JP 2018071431A JP 6610696 B2 JP6610696 B2 JP 6610696B2
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igbt
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semiconductor element
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JP2018113475A (ja
JP2018113475A5 (enrdf_load_stackoverflow
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恵志郎 熊田
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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JP2018071431A 2018-04-03 2018-04-03 トレンチｍｏｓ型半導体装置 Active JP6610696B2 (ja)

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JP2018071431A JP6610696B2 (ja) 2018-04-03 2018-04-03 トレンチｍｏｓ型半導体装置

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JP2018071431A JP6610696B2 (ja) 2018-04-03 2018-04-03 トレンチｍｏｓ型半導体装置

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JP2014055728A Division JP6320808B2 (ja) 2014-03-19 2014-03-19 トレンチｍｏｓ型半導体装置

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JP2019193587A Division JP6791337B2 (ja) 2019-10-24 2019-10-24 トレンチｍｏｓ型半導体装置

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JP2018113475A JP2018113475A (ja) 2018-07-19
JP2018113475A5 JP2018113475A5 (enrdf_load_stackoverflow) 2019-02-28
JP6610696B2 true JP6610696B2 (ja) 2019-11-27

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7223543B2 (ja) 2018-10-05 2023-02-16 ローム株式会社 半導体装置
WO2020129444A1 (ja) * 2018-12-21 2020-06-25 富士電機株式会社 半導体装置および半導体装置の製造方法
KR102251760B1 (ko) * 2019-12-03 2021-05-14 현대모비스 주식회사 전력 반도체 소자
KR102187903B1 (ko) * 2019-12-03 2020-12-07 현대오트론 주식회사 전력 반도체 소자

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3504085B2 (ja) * 1996-09-30 2004-03-08 株式会社東芝 半導体装置
CN102522427B (zh) * 2008-01-29 2014-07-30 富士电机株式会社 半导体装置
JP5526849B2 (ja) * 2010-02-18 2014-06-18 富士電機株式会社 半導体装置
JP5633468B2 (ja) * 2011-05-11 2014-12-03 三菱電機株式会社 半導体装置

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