JP6604665B2 - 圧電振動子およびセンサ - Google Patents
圧電振動子およびセンサ Download PDFInfo
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- 239000013078 crystal Substances 0.000 claims description 57
- 238000005259 measurement Methods 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 description 18
- 238000010168 coupling process Methods 0.000 description 18
- 238000005859 coupling reaction Methods 0.000 description 18
- 238000006467 substitution reaction Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/036—Analysing fluids by measuring frequency or resonance of acoustic waves
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
- G01N29/2437—Piezoelectric probes
- G01N29/245—Ceramic probes, e.g. lead zirconate titanate [PZT] probes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
- H03H9/02039—Characteristics of piezoelectric layers, e.g. cutting angles consisting of a material from the crystal group 32, e.g. langasite, langatate, langanite
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/872—Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/025—Change of phase or condition
- G01N2291/0256—Adsorption, desorption, surface mass change, e.g. on biosensors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
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- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
はじめに、本発明の実施の形態1について説明する。図1は、本発明の実施の形態1における圧電振動子の構成を示す斜視図である。この圧電振動子は、Ca3Ta(Ga1-xAlx)3Si2O14単結晶(0<x≦1)から構成された振動片101を備える。振動片101は、例えば板状とされている。また、単結晶は、X軸を回転軸としてXZ平面からの回転角(カット角)をθ(度)としたとき、18x+17.5≦θ≦24x+24.5とされている。θは、IEC(International Electrotechnical Commission)の定義による。この定義において、例えば水晶ATカットの角度θは、35°15’となる。なお、XY面がCa3Ta(Ga1-xAlx)3Si2O14単結晶(0<x≦1)の(001)面、YZ面がCa3Ta(Ga1-xAlx)3Si2O14単結晶(0<x≦1)の(110)面、XZ面がCa3Ta(Ga1-xAlx)3Si2O14単結晶(0<x≦1)の(100)面である。
次に、本発明の実施の形態2について説明する。実施の形態2においても、前述した実施の形態1と同様に図1の斜視図に示す構成となり、実施の形態2においては、Ca3Nb(Ga1-xAlx)3Si2O14単結晶(0<x≦1)から構成された振動片101を備える。振動片101は、例えば板状とされている。また、単結晶は、X軸を回転軸としてXZ平面からの回転角(カット角)をθとしたとき、25x+23.083≦θ≦32x+26.167とされている。θは、IEC(International Electrotechnical Commission)の定義による。この定義において、例えば水晶ATカットの角度θは、35°15’となる。なお、XY面がCa3Nb(Ga1-xAlx)3Si2O14単結晶(0<x≦1)の(001)面、YZ面がCa3Nb(Ga1-xAlx)3Si2O14単結晶(0<x≦1)の(110)面、XZ面がCa3Nb(Ga1-xAlx)3Si2O14単結晶(0<x≦1)の(100)面である。
次に、本発明の実施の形態3について説明する。実施の形態3においても、前述した実施の形態1,2と同様に図1の斜視図に示す構成となり、実施の形態3においては、Ca3(Ta1-yNby)(Ga1-xAlx)3Si2O14単結晶(0<x≦1、0≦y≦1)から構成された振動片101を備える。振動片101は、例えば板状とされている。また、単結晶は、X軸を回転軸としてXZ平面からの回転角(カット角)をθとしたとき、{18+(25−18)y}x+17.5+(23.083−17.5)y≦θ≦{24+(32−24)y}x+24.5+(26.167−24.5)yとされている。θは、IEC(International Electrotechnical Commission)の定義による。この定義において、例えば水晶ATカットの角度θは、35°15’となる。なお、XY面がCa3(Ta1-yNby)(Ga1-xAlx)3Si2O14単結晶(0<x≦1、0≦y≦1)の(001)面、YZ面がCa3(Ta1-yNby)(Ga1-xAlx)3Si2O14単結晶(0<x≦1、0≦y≦1)の(110)面、XZ面がCa3(Ta1-yNby)(Ga1-xAlx)3Si2O14単結晶(0<x≦1、0≦y≦1)の(100)面である。
次に、本発明の圧電振動子を用いたセンサについて説明する。このセンサは、振動片に設けられて測定対象の物質が接触する測定領域と、測定領域に対する物質の接触による振動子の共振周波数の変化により測定領域に接触した物質の質量を検出する測定手段とを備える。振動片は、例えば、Ca3Ta(Ga1-xAlx)3Si2O14(Al置換量5%)の単結晶から構成すればよい。カット角(回転角)θを21.1°とし、周波数を10MHz近傍と設定すればよい。θは、IEC(International Electrotechnical Commission)の定義による。この定義において、例えば水晶ATカットの角度θは、35°15’となる。
Claims (6)
- Ca3Ta(Ga1-xAlx)3Si2O14単結晶(0<x≦1)からなる振動片を少なくとも1枚備え、
前記単結晶は、X軸を回転軸としてXZ平面からの回転角をθとしたとき、18x+17.5≦θ≦24x+24.5とされている
ことを特徴とする圧電振動子。 - 請求項1記載の圧電振動子において、
20x+20.16≦θ≦21x+22.083とされていることを特徴とする圧電振動子。 - Ca3Nb(Ga1-xAlx)3Si2O14単結晶(0<x≦1)からなる振動片を少なくとも1枚備え、
前記単結晶は、X軸を回転軸としてXZ平面からの回転角をθとしたとき、25x+23.083≦θ≦32x+26.167とされている
ことを特徴とする圧電振動子。 - 請求項3記載の圧電振動子において、
27.6x+24.367≦θ≦27.8x+25.783とされていることを特徴とする圧電振動子。 - 請求項1〜4のいずれか1項に記載の圧電振動子であって、
前記振動片に設けられた電極と、
前記電極に接続された接続端子と、
前記振動片を収容して不活性ガスを封入する気密容器と
を備えることを特徴とする圧電振動子。 - 請求項1〜4のいずれか1項に記載の圧電振動子を用いたセンサであって、
前記振動片に設けられて測定対象の物質が接触する測定領域と、
前記測定領域に対する前記物質の接触による前記振動子の共振周波数の変化により前記測定領域に接触した前記物質の質量を検出する測定手段と
を備えることを特徴とするセンサ。
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JP2015217394 | 2015-11-05 | ||
JP2015217394 | 2015-11-05 | ||
PCT/JP2016/082792 WO2017078135A1 (ja) | 2015-11-05 | 2016-11-04 | 圧電振動子およびセンサ |
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JPWO2017078135A1 JPWO2017078135A1 (ja) | 2018-07-26 |
JP6604665B2 true JP6604665B2 (ja) | 2019-11-13 |
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US (1) | US11031539B2 (ja) |
EP (3) | EP3696974A1 (ja) |
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JP7210828B2 (ja) * | 2018-03-06 | 2023-01-24 | 株式会社Piezo Studio | 弾性表面波デバイス |
JP7337339B2 (ja) * | 2019-03-22 | 2023-09-04 | 国立大学法人東北大学 | 膜厚センサ素子 |
CN110299896B (zh) * | 2019-07-05 | 2023-06-02 | 台晶(重庆)电子有限公司 | 一种石英晶体振荡器切割方法 |
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US6424081B1 (en) * | 2000-05-03 | 2002-07-23 | Crystal Photonics, Incorporated | Electronic device including langasite structure compounds and method for making same |
US6455986B2 (en) * | 2000-05-03 | 2002-09-24 | Crystal Photonics, Incorporated | Electronic device including langasite structure compound and method for making such devices |
JP2002118442A (ja) | 2000-10-04 | 2002-04-19 | Tdk Corp | 弾性表面波装置及びこれに用いる圧電基板 |
JP2002271171A (ja) | 2001-03-07 | 2002-09-20 | Tdk Corp | 弾性表面波装置用圧電基板および弾性表面波装置 |
AT410737B (de) | 2001-05-31 | 2003-07-25 | Avl List Gmbh | Piezoelektrisches resonatorelement der kristallographischen punktgruppe 32 |
JP2008019122A (ja) * | 2006-07-12 | 2008-01-31 | Nec Tokin Corp | 圧電単結晶組成物 |
US7667369B2 (en) * | 2006-11-01 | 2010-02-23 | Delaware Capital Formation, Inc. | High sensitivity microsensors based on flexure induced frequency effects |
CN103180492B (zh) | 2010-10-13 | 2016-10-26 | Tdk株式会社 | 硅酸镓镧型氧化物材料、其制造方法及该制造方法中使用的原材料 |
JP5987153B2 (ja) * | 2012-11-02 | 2016-09-07 | 京セラクリスタルデバイス株式会社 | 圧電振動子 |
CN104695017A (zh) * | 2013-12-05 | 2015-06-10 | 中国科学院上海硅酸盐研究所 | 一种硅酸铝镓铌钙压电晶体及其制备方法 |
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- 2016-11-04 US US15/773,157 patent/US11031539B2/en active Active
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EP3373450A1 (en) | 2018-09-12 |
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JPWO2017078135A1 (ja) | 2018-07-26 |
US20180323366A1 (en) | 2018-11-08 |
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US11031539B2 (en) | 2021-06-08 |
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