JP6596340B2 - 基板洗浄方法および基板洗浄装置 - Google Patents

基板洗浄方法および基板洗浄装置 Download PDF

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Publication number
JP6596340B2
JP6596340B2 JP2016009532A JP2016009532A JP6596340B2 JP 6596340 B2 JP6596340 B2 JP 6596340B2 JP 2016009532 A JP2016009532 A JP 2016009532A JP 2016009532 A JP2016009532 A JP 2016009532A JP 6596340 B2 JP6596340 B2 JP 6596340B2
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Prior art keywords
gas
cluster
cluster generation
substrate
generation gas
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JP2016009532A
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Japanese (ja)
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JP2017130574A5 (https=
JP2017130574A (ja
Inventor
和也 土橋
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2016009532A priority Critical patent/JP6596340B2/ja
Priority to US16/071,480 priority patent/US20190035651A1/en
Priority to PCT/JP2016/086607 priority patent/WO2017126248A1/ja
Priority to KR1020187023890A priority patent/KR102071817B1/ko
Priority to CN201680079440.8A priority patent/CN108475629B/zh
Publication of JP2017130574A publication Critical patent/JP2017130574A/ja
Publication of JP2017130574A5 publication Critical patent/JP2017130574A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/60—Cleaning only by mechanical processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Cleaning Or Drying Semiconductors (AREA)
JP2016009532A 2016-01-21 2016-01-21 基板洗浄方法および基板洗浄装置 Active JP6596340B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016009532A JP6596340B2 (ja) 2016-01-21 2016-01-21 基板洗浄方法および基板洗浄装置
US16/071,480 US20190035651A1 (en) 2016-01-21 2016-12-08 Substrate cleaning method, substrate cleaning device, and method of selecting cluster generating gas
PCT/JP2016/086607 WO2017126248A1 (ja) 2016-01-21 2016-12-08 基板洗浄方法および基板洗浄装置、ならびにクラスター生成ガスの選定方法
KR1020187023890A KR102071817B1 (ko) 2016-01-21 2016-12-08 기판 세정 방법 및 기판 세정 장치, 및 클러스터 생성 가스의 선정 방법
CN201680079440.8A CN108475629B (zh) 2016-01-21 2016-12-08 基片清洗方法、基片清洗装置和团簇生成气体的选择方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016009532A JP6596340B2 (ja) 2016-01-21 2016-01-21 基板洗浄方法および基板洗浄装置

Publications (3)

Publication Number Publication Date
JP2017130574A JP2017130574A (ja) 2017-07-27
JP2017130574A5 JP2017130574A5 (https=) 2018-10-18
JP6596340B2 true JP6596340B2 (ja) 2019-10-23

Family

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JP2016009532A Active JP6596340B2 (ja) 2016-01-21 2016-01-21 基板洗浄方法および基板洗浄装置

Country Status (5)

Country Link
US (1) US20190035651A1 (https=)
JP (1) JP6596340B2 (https=)
KR (1) KR102071817B1 (https=)
CN (1) CN108475629B (https=)
WO (1) WO2017126248A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI867065B (zh) * 2019-10-23 2024-12-21 日商東京威力科創股份有限公司 基板洗淨方法、及基板洗淨裝置
JP7510334B2 (ja) * 2020-10-30 2024-07-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN115103501B (zh) * 2022-06-22 2024-08-16 西北核技术研究所 环形构型气体团簇发生装置及环形构型氪气团簇制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5062898A (en) 1990-06-05 1991-11-05 Air Products And Chemicals, Inc. Surface cleaning using a cryogenic aerosol
KR100349948B1 (ko) 1999-11-17 2002-08-22 주식회사 다산 씨.앤드.아이 클러스터를 이용한 건식 세정 장치 및 방법
JP5006134B2 (ja) * 2007-08-09 2012-08-22 東京エレクトロン株式会社 ドライクリーニング方法
CN102124544B (zh) * 2008-08-18 2013-11-13 岩谷产业株式会社 团簇喷射式加工方法、半导体元件、微机电元件及光学零件
US7982196B2 (en) * 2009-03-31 2011-07-19 Tel Epion Inc. Method for modifying a material layer using gas cluster ion beam processing
US8187971B2 (en) * 2009-11-16 2012-05-29 Tel Epion Inc. Method to alter silicide properties using GCIB treatment
US8173980B2 (en) * 2010-05-05 2012-05-08 Tel Epion Inc. Gas cluster ion beam system with cleaning apparatus
US9183965B2 (en) * 2010-11-30 2015-11-10 Nomura Plating Co., Ltd. Conductive hard carbon film and method for forming the same
US8440578B2 (en) * 2011-03-28 2013-05-14 Tel Epion Inc. GCIB process for reducing interfacial roughness following pre-amorphization
JP5785818B2 (ja) * 2011-08-26 2015-09-30 岩谷産業株式会社 クラスタによる加工方法
JP6048043B2 (ja) * 2012-09-28 2016-12-21 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置及び真空処理システム
US20150064911A1 (en) * 2013-08-27 2015-03-05 Tokyo Electron Limited Substrate processing method, substrate processing apparatus and storage medium
CN105917438B (zh) * 2013-11-22 2018-04-24 Tel 艾派恩有限公司 分子束增强gcib处理
JP6196920B2 (ja) * 2014-03-06 2017-09-13 東京エレクトロン株式会社 グラフェン加工方法
JP6566683B2 (ja) * 2014-07-02 2019-08-28 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置

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Publication number Publication date
JP2017130574A (ja) 2017-07-27
KR102071817B1 (ko) 2020-01-30
KR20180104057A (ko) 2018-09-19
US20190035651A1 (en) 2019-01-31
WO2017126248A1 (ja) 2017-07-27
CN108475629B (zh) 2022-08-19
CN108475629A (zh) 2018-08-31

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