JP6581766B2 - 発光ダイオードモジュール及びその製造方法 - Google Patents
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- JP6581766B2 JP6581766B2 JP2014205343A JP2014205343A JP6581766B2 JP 6581766 B2 JP6581766 B2 JP 6581766B2 JP 2014205343 A JP2014205343 A JP 2014205343A JP 2014205343 A JP2014205343 A JP 2014205343A JP 6581766 B2 JP6581766 B2 JP 6581766B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
Description
102、104 導電電極板
105 複合基板
106 蛍光粉末層
108 発光ダイオードチップ
109a、109b、109c、109d、109e、109f 溝部
110 ボンディングワイヤ
112 透光基板
114 蛍光粉末層
116 透光基板
200a、200b、200c LED電球
202 接続具
203 エジソンベース
204カバー
209 支持物
213 凹部
600、700 LEDモジュール
Claims (9)
- 第一透光基板と、
第一蛍光粉末層と、
少なくとも2つの溝部を具備し、かつ平行に前記第一透光基板上に形成される第二透光基板であって、前記第一蛍光粉末層は、前記第一透光基板と前記第二透光基板との間に位置する、第二透光基板と、
前記第二透光基板上に固定され、かつ前記2つの溝部の間に位置する複数個の発光ダイオードチップと、
前記複数個の発光ダイオードチップを覆い、且つ前記複数個の溝部の中に充填される第二蛍光粉末層と、を含み、
前記第二蛍光粉末層は前記溝部によって前記第一蛍光粉末層と接触する、発光ダイオードモジュール。 - 前記溝部は底部を具備し、かつ該底部から前記第一蛍光粉末層までの距離は150umより大きくない、請求項1に記載の発光ダイオードモジュール。
- 前記第二蛍光粉末層は前記複数個の溝部を完全に覆う、請求項1に記載の発光ダイオードモジュール。
- 前記複数個の発光ダイオードチップを電気的に接続させる電気回路を更に含み、前記第二蛍光粉末層は該電気回路を覆う、請求項1に記載の発光ダイオードモジュール。
- 前記電気回路は前記第二透光基板上に形成される印刷式電気回路であり、前記複数個の発光ダイオードチップはフリップチップ方法により該印刷式電気回路に固定される、請求項4に記載の発光ダイオードモジュール。
- 前記電気回路は複数のボンディングワイヤを含み、各ボンディングワイヤは前記複数個の発光ダイオードチップのうちの2つの発光ダイオードチップを電気的に接続させる、請求項4に記載の発光ダイオードモジュール。
- 前記第二透光基板上に形成され、かつ前記複数個の発光ダイオードチップに電気的に接続される少なくとも2つの導電電極板を更に含む、請求項1に記載の発光ダイオードモジュール。
- 前記第二蛍光粉末層は前記複数個の発光ダイオードチップ上に覆われる、請求項1に記載の発光ダイオードモジュール。
- 前記複数個の発光ダイオードチップ上に覆われる第三蛍光粉末層を更に含み、
前記第二蛍光粉末層と前記第二透光基板とは共平面である、請求項1に記載の発光ダイオードモジュール。
Applications Claiming Priority (2)
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TW102136176A TWI610465B (zh) | 2013-10-07 | 2013-10-07 | 發光二極體組件及製作方法 |
TW102136176 | 2013-10-07 |
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JP2019124909A Division JP7015278B2 (ja) | 2013-10-07 | 2019-07-04 | 発光ダイオードモジュール及びその製造方法 |
Publications (3)
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JP2015076612A JP2015076612A (ja) | 2015-04-20 |
JP2015076612A5 JP2015076612A5 (ja) | 2017-11-16 |
JP6581766B2 true JP6581766B2 (ja) | 2019-09-25 |
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JP2014205343A Active JP6581766B2 (ja) | 2013-10-07 | 2014-10-06 | 発光ダイオードモジュール及びその製造方法 |
JP2019124909A Active JP7015278B2 (ja) | 2013-10-07 | 2019-07-04 | 発光ダイオードモジュール及びその製造方法 |
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US (6) | US9502622B2 (ja) |
JP (2) | JP6581766B2 (ja) |
CN (3) | CN110047823A (ja) |
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2013
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US11949050B2 (en) | 2024-04-02 |
TWI610465B (zh) | 2018-01-01 |
US20180233635A1 (en) | 2018-08-16 |
CN110071205A (zh) | 2019-07-30 |
US9502622B2 (en) | 2016-11-22 |
US20190296198A1 (en) | 2019-09-26 |
US20210151640A1 (en) | 2021-05-20 |
JP2019197906A (ja) | 2019-11-14 |
JP7015278B2 (ja) | 2022-02-02 |
CN110047823A (zh) | 2019-07-23 |
US10319886B2 (en) | 2019-06-11 |
US10910528B2 (en) | 2021-02-02 |
TW201515279A (zh) | 2015-04-16 |
JP2015076612A (ja) | 2015-04-20 |
US20150097199A1 (en) | 2015-04-09 |
US20170040504A1 (en) | 2017-02-09 |
CN104517947B (zh) | 2019-01-18 |
US20230012204A1 (en) | 2023-01-12 |
CN110071205B (zh) | 2022-04-26 |
US11450791B2 (en) | 2022-09-20 |
US9947839B2 (en) | 2018-04-17 |
CN104517947A (zh) | 2015-04-15 |
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