JP6581495B2 - Substrate holding device - Google Patents
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- JP6581495B2 JP6581495B2 JP2015248033A JP2015248033A JP6581495B2 JP 6581495 B2 JP6581495 B2 JP 6581495B2 JP 2015248033 A JP2015248033 A JP 2015248033A JP 2015248033 A JP2015248033 A JP 2015248033A JP 6581495 B2 JP6581495 B2 JP 6581495B2
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Description
本発明は、半導体ウエハなどの基板を基体に吸着保持する基板保持装置に関する。 The present invention relates to a substrate holding apparatus that holds a substrate such as a semiconductor wafer by suction on a substrate.
基体の上面に、基板の外縁部を支持する環状の第１支持部と、第１支持部により囲まれた領域内に配置された複数の突起状の第２支持部と、当該領域内に配置された基板を吸着しない領域を形成する筒状部と、が形成され、基板と基体とによって形成される第１支持部の内側の空間の空気吸引が、筒状部に近い吸引口から開始されるように構成されている基板保持装置が提案されている（たとえば、特許文献１参照）。これにより、基板の皺が非吸着部分へ集中する現象の発生が回避されるので、基板の全体的な平坦度の向上が図られている。 An annular first support portion for supporting the outer edge portion of the substrate on the upper surface of the base, a plurality of projecting second support portions disposed in a region surrounded by the first support portion, and disposed in the region A cylindrical portion that forms a region that does not adsorb the formed substrate, and air suction inside the first support portion formed by the substrate and the base is started from a suction port close to the cylindrical portion. A substrate holding device configured as described above has been proposed (see, for example, Patent Document 1). As a result, the occurrence of a phenomenon in which wrinkles of the substrate are concentrated on the non-adsorbed portion is avoided, so that the overall flatness of the substrate is improved.
しかし、精細な回路パターンを製造するために半導体露光装置の光源の線幅の微細化が進んでおり、ナノメーターサイズの線幅が主流となりつつあるため、基板の保持状態における形状精度に対する要求基準が高くなっている。 However, since the line width of the light source of a semiconductor exposure apparatus is becoming finer to produce fine circuit patterns, and nanometer-sized line widths are becoming mainstream, the required standard for shape accuracy in the holding state of the substrate Is high.
そこで、本発明は、保持状態における基板の形状精度の向上を図りうる基板保持装置を提供することを目的とする。 Therefore, an object of the present invention is to provide a substrate holding device that can improve the shape accuracy of the substrate in the holding state.
本発明の基板保持装置は、上面まで連通する通気経路が形成されている板状の基体を備え、前記基体の上面に、上方に突出している複数の凸部と、上方に突出して前記通気経路の開口および前記複数の凸部を囲う環状凸部と、が形成されている基板保持装置であって、前記基体の上面が凹曲面状に形成され、前記基体の上面においてもっとも内側の前記環状凸部を外側の前記環状凸部が一重または多重に囲うように複数の前記環状凸部が形成され、前記複数の環状凸部のうち少なくとも１つの環状凸部が前記複数の凸部よりも上方への突出量が少なくなるように形成され、前記基体の全体が湾曲形状に形成されている一方、平坦形状に変形可能に構成されていることを特徴とする。
The substrate holding device of the present invention includes a plate-like base body in which a ventilation path communicating to the upper surface is formed, a plurality of convex portions protruding upward on the upper surface of the base body, and the ventilation path protruding upward. And an annular projection that surrounds the plurality of projections, wherein the upper surface of the base is formed in a concave curved surface, and the innermost annular projection on the upper surface of the base is formed. A plurality of the annular convex portions are formed so that the outer annular convex portions surround the portion in a single or multiple manner, and at least one of the plurality of annular convex portions is higher than the plurality of convex portions. The whole base is formed in a curved shape while being deformable into a flat shape .
本発明の基板保持装置およびこれを用いた基板保持方法によれば、基板が比較的大きく反っているまたは撓んでいる場合でも、基板の形状を少なくとも部分的に基体の上面の凹曲面形状になじませることができる。すなわち、比較的反りまたは撓みが大きい基板であっても、これが基体の上面に形成された複数の凸部のうち少なくとも一部の上端面に当接するように、この基板の形状が矯正または補正される。この状態で、通気経路が真空吸引装置によって減圧されることにより、基体および基板の間に形成されている空間が基体に形成された貫通孔を通じて減圧され、基板が真空吸着装置に吸着保持される。この段階において基板は基体の上面に形成された複数の凸部の全部の上端面に当接した状態になる。基板の反りまたはゆがみが大きいと、基板と基体との間隔が大きくなり、基体および基板の間に形成されている空間に負圧領域を発生させて基板を吸着保持することが困難である。しかるに、基体の上面が凹曲面状であるため、基板がゆがんでいてもこれと基体との間隔を狭小化し、基体および基板の間に形成されている空間に負圧領域を発生させて基板を吸着保持することが容易になる。 According to the substrate holding device and the substrate holding method using the same according to the present invention, even when the substrate is relatively warped or bent, the shape of the substrate is at least partially adapted to the concave curved surface shape of the upper surface of the substrate. Can be made. That is, even if the substrate is relatively warped or bent, the shape of the substrate is corrected or corrected so that the substrate abuts at least a part of the upper end surface of the plurality of convex portions formed on the upper surface of the base. The In this state, the ventilation path is depressurized by the vacuum suction device, whereby the space formed between the base and the substrate is depressurized through the through hole formed in the base, and the substrate is sucked and held by the vacuum suction device. . At this stage, the substrate is in contact with all the upper end surfaces of the plurality of convex portions formed on the upper surface of the base. When the warpage or distortion of the substrate is large, the distance between the substrate and the base becomes large, and it is difficult to attract and hold the substrate by generating a negative pressure region in the space formed between the base and the substrate. However, since the upper surface of the base is a concave curved surface, even if the substrate is distorted, the distance between the base and the base is reduced, and a negative pressure region is generated in the space formed between the base and the substrate. It becomes easy to hold by adsorption.
このように、反りまたは撓みが比較的大きい基板であっても、その形状を基体の上面に形成された複数の凸部の全部の上端面により定まる形状に高精度で一致させながら、当該基板を基板保持装置に吸着保持させることができる。特に、薄い基板はその反りを矯正すると亀裂が入るという問題があったが、たとえばポテトチップス様または鞍形状のようなゆがんだ形状を有する基板が均等な凹曲面形状の姿勢で固定されることで、局所的な平坦度いわゆるローカルフラットネスの向上が図られる。 As described above, even if the substrate is relatively warped or bent, the shape of the substrate is matched with the shape determined by all the upper end surfaces of the plurality of convex portions formed on the upper surface of the substrate with high accuracy. The substrate holding device can be sucked and held. In particular, a thin substrate has a problem that cracks occur when the warp is corrected. For example, a substrate having a distorted shape such as a potato chip-like shape or a bowl shape is fixed in a uniform concave curved shape. In addition, the local flatness, so-called local flatness can be improved.
当該構成の基板保持装置によれば、基板が比較的大きく反っているまたは撓んでいる場合でも、基板の形状を基体の形状により容易になじませることができる。なお、基板保持装置が基台の平坦な上面に載置され、基体と基台との間に形成されている空間が減圧されることにより、基体が湾曲形状から平坦形状に変形されてもよい。基板保持装置が基台の平坦な上面に載置され、基体がその外周縁部に外力が付加されることにより湾曲形状から平坦形状に変形されてもよい。 According to the substrate holding device having such a configuration, the shape of the substrate can be easily adapted to the shape of the base body even when the substrate is warped or bent relatively large. In addition, the substrate holding device may be placed on the flat upper surface of the base, and the space formed between the base and the base may be decompressed, whereby the base may be deformed from a curved shape to a flat shape. . The substrate holding device may be placed on the flat upper surface of the base, and the base body may be deformed from a curved shape to a flat shape by applying an external force to the outer peripheral edge thereof.
本発明の基板保持装置において、前記基体の上面に、上方に突出する複数の凸部と、上方に突出して前記通気経路の開口および前記複数の凸部を囲う環状凸部と、が形成されていることが好ましい。さらに、本発明の基板保持装置において、前記基体の下面に、下方に突出する複数の凸部と、前記複数の凸部を囲う環状凸部と、が形成されていることが好ましい。 In the substrate holding apparatus of the present invention, a plurality of convex portions projecting upward and an annular convex portion projecting upward and surrounding the opening of the ventilation path and the plurality of convex portions are formed on the upper surface of the base body. Preferably it is. Furthermore, in the substrate holding device of the present invention, it is preferable that a plurality of convex portions projecting downward and an annular convex portion surrounding the plurality of convex portions are formed on the lower surface of the base.
本発明の基板保持装置において、前記基体の上面においてもっとも内側の前記環状凸部を外側の前記環状凸部が一重または多重に囲うように複数の前記環状凸部が形成され、前記複数の環状凸部のそれぞれが前記複数の凸部と上方への突出量が等しくなるように形成され、前記基体および前記基板の間において前記複数の環状凸部により画定される複数の空間のそれぞれに対応して前記通気経路の開口が前記基体に形成されていることが好ましい。 In the substrate holding apparatus of the present invention, a plurality of the annular protrusions are formed so that the outermost annular protrusions surround the innermost annular protrusion on the upper surface of the base in a single or multiple manner, and the plurality of annular protrusions are formed. Each of the portions is formed so that the amount of upward protrusion is equal to the plurality of convex portions, and corresponds to each of the plurality of spaces defined by the plurality of annular convex portions between the base and the substrate. It is preferable that an opening of the ventilation path is formed in the base.
（第１実施形態）
（構成）
図１に示されている本発明の第１実施形態としての基板保持装置１（または保持部材）は、セラミックス焼結体からなる略円板状の基体１０を備えている。セラミックス焼結体としては、たとえばＳｉＣ焼結体またはＡｌ2Ｏ3焼結体が採用される。基体１０の上面が、ウエハＷの反りまたはゆがみをある程度（たとえば約１／２）緩和することができる程度に、球表面の一部、楕円体表面の一部または円柱側面の一部などに相当する湾曲形状に形成されている。
(First embodiment)
(Constitution)
A substrate holding device 1 (or holding member) as a first embodiment of the present invention shown in FIG. 1 includes a substantially disk-shaped base body 10 made of a ceramic sintered body. As the ceramic sintered body, for example, a SiC sintered body or an Al 2 O 3 sintered body is employed. The upper surface of the substrate 10 corresponds to a part of a spherical surface, a part of an ellipsoidal surface, a part of a cylindrical side surface, etc. to such an extent that the warpage or distortion of the wafer W can be reduced to some extent (for example, about 1/2) It is formed in a curved shape.
基体１０には、その上面まで連通する通気経路１０２が形成されている。本実施形態では通気経路１０２は、基体１０をその厚さ方向に貫通しており、たとえば基体１０の中心を重心とする正多角形（たとえば正三角形）の各頂点に相当する位置に形成されている。基体１０の中心に１個の開口が形成され、または、基体１０の中心から離間した任意箇所に複数の開口が形成されるなど、通気経路１０２の上側開口の個数および配置はさまざまに変更されてもよい。通気経路１０２は基体１０の側面開口から内部で横に延在した後、上方に延在して基体１０の上面開口まで連通するように形成されてもよい。基体１０の下面に溝部が形成され、基体１０の下面が基台（図示略）の上面に当接するように基体１０が基台に固定されることにより、基台および溝部により囲まれた通路により通気経路１０２の一部が構成されていてもよい。 The base body 10 is formed with a ventilation path 102 that communicates with the upper surface thereof. In the present embodiment, the ventilation path 102 penetrates the base body 10 in the thickness direction, and is formed at a position corresponding to each vertex of a regular polygon (for example, a regular triangle) centered on the center of the base body 10. Yes. The number and arrangement of the upper openings of the ventilation path 102 are variously changed such that one opening is formed at the center of the base body 10 or a plurality of openings are formed at arbitrary positions away from the center of the base body 10. Also good. The ventilation path 102 may be formed so as to extend laterally from the side opening of the base 10 and then extend upward to communicate with the top opening of the base 10. A groove is formed on the lower surface of the base 10, and the base 10 is fixed to the base so that the lower surface of the base 10 abuts on the upper surface of the base (not shown), so that the passage surrounded by the base and the groove A part of the ventilation path 102 may be configured.
基体１０の上面に、上方に突出する複数の凸部１１１と、基体１０と中心を同じくする略円環状に上方に突出して通気経路１０２の上側開口および複数の凸部１１１を囲う単一の環状凸部１１２と、が形成されている。各凸部１１１は、円柱状、角柱状、円錐台状もしくは角錐台状、または下部より上部が小さい多段円柱状、多段角柱状、多段円錐台状もしくは多段角錐台状など、上端面が平坦であるような任意の形状に形成される。複数の凸部１１１は、格子状（正方格子状または六角格子状）などの形態で規則的（または周期的）に配列されている。環状凸部１１２の高さまたは基体１０の上面からの突出量は各凸部１１１と同一であってもよく、少なくてもよい。基板保持装置１は変形を前提としておらず、複数の凸部１１１の上端面が、基板保持装置１の上面とほぼ同形状の同一の湾曲面に存在するように形成されている。 A plurality of convex portions 111 projecting upward on the upper surface of the base body 10, and a single ring surrounding the upper opening of the ventilation path 102 and the plurality of convex portions 111 projecting upward in a substantially annular shape having the same center as the base body 10. Convex part 112 is formed. Each convex portion 111 has a flat upper end surface such as a columnar shape, a prismatic shape, a truncated cone shape or a truncated pyramid shape, or a multistage cylindrical shape having a lower upper portion, a multistage prismatic shape, a multistage truncated cone shape, or a multistage truncated pyramid shape. It is formed in any arbitrary shape. The plurality of convex portions 111 are regularly (or periodically) arranged in a lattice shape (square lattice shape or hexagonal lattice shape). The height of the annular protrusion 112 or the amount of protrusion from the upper surface of the substrate 10 may be the same as or less than that of each protrusion 111. The substrate holding device 1 is not premised on deformation, and the upper end surfaces of the plurality of convex portions 111 are formed so as to exist on the same curved surface having substantially the same shape as the upper surface of the substrate holding device 1.
（機能）
本発明の第１実施形態としての基板保持装置１によれば、その上にウエハＷが載置された際、ウエハＷの形状を基板保持装置１の形状に少なくとも部分的になじませることができる。その上で、基体１０に形成された通気経路１０２が真空吸引装置（図示略）により減圧されることにより、ウエハＷの形状を基板保持装置１の形状に全体的になじませながら、当該ウエハＷが基板保持装置１に吸着保持される。すなわち、反りまたは撓みが比較的大きい基板Ｗであっても、その形状を基体１０の上面に形成された複数の凸部１１１の全部の上端面または当接面により定まる形状に高精度で一致させながら、当該基板Ｗを真空吸着装置に吸着保持させることができる。
(function)
According to the substrate holding device 1 as the first embodiment of the present invention, when the wafer W is placed thereon, the shape of the wafer W can be at least partially adapted to the shape of the substrate holding device 1. . After that, the ventilation path 102 formed in the base body 10 is decompressed by a vacuum suction device (not shown), so that the shape of the wafer W is generally adapted to the shape of the substrate holding device 1 and the wafer W Is sucked and held by the substrate holding device 1. That is, even when the substrate W is relatively warped or bent, the shape thereof is made to coincide with the shape determined by all the upper end surfaces or contact surfaces of the plurality of convex portions 111 formed on the upper surface of the base body 10 with high accuracy. However, the substrate W can be sucked and held by the vacuum suction device.
（第２実施形態）
（構成）
図２に示されている本発明の第２実施形態としての基板保持装置１においては、基体１０が、その上面のみならず全体がウエハＷの反り形状に合致するように、球表面の一部、楕円体表面の一部または円柱側面の一部などに相当する湾曲形状に形成されている。基体１０は、その中心における上面法線方向について、当該中心および外縁の位置偏差がたとえば０．１〜１．０［ｍｍ］だけ存在するような湾曲形状を有する。基体１０は、平坦形状に変形可能に構成されている（図３参照）。
(Second Embodiment)
(Constitution)
In the substrate holding apparatus 1 as the second embodiment of the present invention shown in FIG. 2, a part of the spherical surface of the substrate 10 is matched so that not only the upper surface but also the whole of the substrate 10 matches the warped shape of the wafer W. And a curved shape corresponding to a part of the surface of the ellipsoid or a part of the cylindrical side surface. The base body 10 has a curved shape in which a positional deviation between the center and the outer edge is, for example, 0.1 to 1.0 [mm] with respect to the upper surface normal direction at the center. The base 10 is configured to be deformable into a flat shape (see FIG. 3).
基体１０の下面に、下方に突出する複数の凸部１２１と、基体１０と中心を同じくする略円環状に下方に突出して通気経路１０２の下側開口および複数の凸部１２１を囲う単一の環状凸部１２２と、が形成されている。各凸部１２１は、円柱状など、下端面が平坦であるような任意の形状に形成される。複数の凸部１２１は、格子状などの形態で規則的に配列されている。環状凸部１２２の高さまたは基体１０の下面からの突出量は各凸部１２１と同一であってもよく、少なくてもよい。基体１０の上面側の各凸部１１１の位置と、基体１０の下面側の各凸部１２１の位置とは、基体１０の上面および下面の中間にある面を基準として対称であってもよく、非対称であってもよい。 A plurality of convex portions 121 projecting downward on the lower surface of the base body 10, and a single ring surrounding the lower opening of the ventilation path 102 and the plurality of convex portions 121 projecting downward in a substantially annular shape having the same center as the base body 10. An annular convex portion 122 is formed. Each convex part 121 is formed in an arbitrary shape having a flat bottom end surface such as a columnar shape. The plurality of convex portions 121 are regularly arranged in a lattice shape or the like. The height of the annular protrusion 122 or the amount of protrusion from the lower surface of the substrate 10 may be the same as or less than that of each protrusion 121. The positions of the respective convex portions 111 on the upper surface side of the base body 10 and the positions of the respective convex portions 121 on the lower surface side of the base body 10 may be symmetric with respect to a surface intermediate between the upper surface and the lower surface of the base body 10. It may be asymmetric.
その他の構成は、第１実施形態の基板保持装置１（図１参照）と同様であるため、同一符号を用いるとともに説明を省略する。 Since other configurations are the same as those of the substrate holding apparatus 1 (see FIG. 1) of the first embodiment, the same reference numerals are used and description thereof is omitted.
基体１０が平坦状に変形した際、複数の凸部１１１の上端面が同一の平面内に位置するように外縁部に近い凸部１１１の上端面が内側に向くように傾斜して形成されていてもよい。基体１０の変形を容易にするため、基体１０が部分的に肉薄に形成されていてもよい。基体１０が平坦形状に変形した際、複数の凸部１１１の高さが均等になるように、当該薄肉部分に存在する凸部１１１が他の部分に存在する凸部１１１よりも突出量が大きくなるように複数の凸部１１１が形成されてもよい。 When the base body 10 is deformed into a flat shape, the upper end surfaces of the convex portions 111 close to the outer edge portion are inclined so that the upper end surfaces of the plurality of convex portions 111 are positioned in the same plane. May be. In order to facilitate the deformation of the substrate 10, the substrate 10 may be partially formed thin. When the base body 10 is deformed into a flat shape, the protruding portions 111 present in the thin portion have a larger protrusion amount than the protruding portions 111 present in other portions so that the heights of the plurality of protruding portions 111 are uniform. A plurality of convex portions 111 may be formed so as to be.
（機能）
本発明の第２実施形態としての基板保持装置１によれば、基板保持装置１の上に基板Ｗが載置される。基板Ｗが比較的大きく反っているまたは撓んでいる場合でも、この段階で基板Ｗの形状を少なくとも部分的に基板保持装置１を構成する基体１０の上面の凹曲面形状になじませることができる。すなわち、比較的反りまたは撓みが大きい基板Ｗであっても、これが基体１０の上面に形成された複数の凸部１１１のうち少なくとも一部の上端面に当接するように、この基板Ｗの形状が矯正または補正される。
(function)
According to the substrate holding device 1 as the second embodiment of the present invention, the substrate W is placed on the substrate holding device 1. Even when the substrate W is warped or bent relatively large, the shape of the substrate W can be at least partially adapted to the concave curved surface shape of the upper surface of the substrate 10 constituting the substrate holding device 1 at this stage. That is, even if the substrate W is relatively warped or bent, the shape of the substrate W is such that the substrate W comes into contact with at least a part of the upper end surface of the plurality of convex portions 111 formed on the upper surface of the base 10. Corrected or corrected.
この状態で、上面が略平面形状の基台２の上に基板保持装置１が載置され、かつ、この基台２に形成されている通気経路１０２が真空吸引装置（図示略）によって減圧される。これにより、基板保持装置１および基台２の間に形成されている下側空間が基台２に形成された通気経路２０２を通じて減圧され、基板保持装置１が平坦形状に変形した状態で基台２に吸着保持される（図３参照）。また、基板保持装置１および基板Ｗの間に形成されている上側空間が基体１０に形成された通気経路１０２を通じて減圧され、基板Ｗが基板保持装置１に吸着保持される（図３参照）。この段階において基板Ｗは基体１０の上面に形成された複数の凸部１１１の全部の上端面に当接した状態になる。このように、反りまたは撓みが比較的大きい基板Ｗであっても、その形状を基体１０の上面に形成された複数の凸部１１１の全部の上端面または当接面により定まる形状に高精度で一致させながら、当該基板Ｗを基板保持装置１に吸着保持させることができる。 In this state, the substrate holding device 1 is placed on the base 2 having a substantially planar upper surface, and the ventilation path 102 formed in the base 2 is decompressed by a vacuum suction device (not shown). The As a result, the lower space formed between the substrate holding device 1 and the base 2 is decompressed through the ventilation path 202 formed in the base 2, and the base in a state where the substrate holding device 1 is deformed into a flat shape. 2 (see FIG. 3). Further, the upper space formed between the substrate holding device 1 and the substrate W is depressurized through the ventilation path 102 formed in the base 10, and the substrate W is sucked and held by the substrate holding device 1 (see FIG. 3). At this stage, the substrate W is in contact with all the upper end surfaces of the plurality of convex portions 111 formed on the upper surface of the base body 10. As described above, even if the substrate W is relatively warped or bent, the shape thereof is determined with high accuracy into a shape determined by all the upper end surfaces or contact surfaces of the plurality of convex portions 111 formed on the upper surface of the base 10. The substrate W can be sucked and held by the substrate holding device 1 while matching.
なお、通気経路１０２が減圧され、基板保持装置１（または基体１０）および基板Ｗの間に形成されている上側空間が減圧された際、図５Ａに示されているように基体１０が湾曲形状のままで基板保持装置１に基板Ｗが同じく湾曲形状で吸着保持されてもよい。この際、基板Ｗの形状は、基体１０の湾曲形状に完全にまたはほぼ完全に合致している。通気経路２０２および１０２を通じた当該上側空間の減圧を確実にするため、基体１０の下面に通気経路１０２をその近傍で全周にわたり囲み、かつ、基台２の上面に当接または近接する環状凸部（図示略）が形成されていてもよい。 When the ventilation path 102 is decompressed and the upper space formed between the substrate holding device 1 (or the substrate 10) and the substrate W is decompressed, the substrate 10 is curved as shown in FIG. 5A. The substrate W may be held by the substrate holding device 1 in the same curved shape. At this time, the shape of the substrate W completely or almost completely matches the curved shape of the substrate 10. In order to ensure decompression of the upper space through the ventilation paths 202 and 102, an annular projection that surrounds the ventilation path 102 on the lower surface of the base body 10 in the vicinity thereof and is in contact with or close to the upper surface of the base 2. A portion (not shown) may be formed.
その上で、図５Ｂに示されているように、基体１０の外周縁部の複数箇所または全周にわたり、治具３０によって下方に外力が付与される。これにより、基体１０が湾曲形状から平坦形状に変形し、基板保持装置１に吸着保持されている基板Ｗも同様に湾曲形状から平坦形状に変形する。遅くともこの段階において基板Ｗは基体１０の上面に形成された複数の凸部１１１の全部の上端面に当接した状態になる。 Then, as shown in FIG. 5B, an external force is applied downward by the jig 30 over a plurality of locations or the entire circumference of the outer peripheral edge of the base 10. Thereby, the base body 10 is deformed from the curved shape to the flat shape, and the substrate W held by the substrate holding device 1 is similarly deformed from the curved shape to the flat shape. At this stage at the latest, the substrate W is in contact with all the upper end surfaces of the plurality of convex portions 111 formed on the upper surface of the base body 10.
（本発明の他の実施形態）
第１実施形態の基板保持装置１において、第２実施形態の基板保持装置１と同様に、基体１０の下面に、下方に突出する複数の凸部１２１と、基体１０と中心を同じくする略円環状に下方に突出して通気経路１０２の下側開口および複数の凸部１２１を囲う単一の環状凸部１２２と、が形成されていてもよい。第２実施形態の基板保持装置１において、第１実施形態の基板保持装置１と同様に、複数の凸部１２１および単一の環状凸部１２２のうち少なくとも一方が省略されてもよい。第２実施形態において、基台２の上面が基体１０と同様に凹曲面状に形成され、基板Ｗが第１実施形態と同様に湾曲形状で基板保持装置１に吸着保持されてもよい。
(Other embodiments of the present invention)
In the substrate holding device 1 according to the first embodiment, as in the substrate holding device 1 according to the second embodiment, a plurality of convex portions 121 projecting downward on the lower surface of the base 10 and a substantially circular shape having the same center as the base 10. A single annular protrusion 122 that protrudes downward in an annular shape and surrounds the lower opening of the ventilation path 102 and the plurality of protrusions 121 may be formed. In the substrate holding device 1 of the second embodiment, at least one of the plurality of convex portions 121 and the single annular convex portion 122 may be omitted as in the substrate holding device 1 of the first embodiment. In the second embodiment, the upper surface of the base 2 may be formed in a concave curved surface shape like the base 10, and the substrate W may be held by suction on the substrate holding device 1 in a curved shape as in the first embodiment.
第１〜第２実施形態では、基体１０の上面には単一の環状凸部１１２が形成されたが（図１〜図２参照）、他の実施形態として、図４に示されているように基体１０の上面において内側の環状凸部１１２を外側の環状凸部が囲うように複数（図４の例では１１個）の環状凸部１１２が形成され、複数の環状凸部１１２のうち少なくとも１つの環状凸部１１２が複数の凸部１１１よりも上方への突出量が少なくなるように形成されていてもよい。たとえば、複数の環状凸部１１２のうちもっとも外側にある環状凸部１１２が複数の凸部１１１と比較して上方への突出量が等しくなるように形成される一方、それよりも内側にある環状凸部１１２が複数の凸部１１１と比較して上方への突出量が小さくなるように形成されていてもよい。また、外側から数えて少なくとも１番目および２番目の環状凸部１１２が複数の凸部１１１と比較して上方への突出量が少なくなるように形成され、かつ、外側から数えて１番目の環状凸部１１２が、周方向の少なくとも一部において、外側から数えて２番目の環状凸部１１２よりも上方突出量が少なくなるように形成されていてもよい。 In the first and second embodiments, a single annular protrusion 112 is formed on the upper surface of the base body 10 (see FIGS. 1 and 2). As another embodiment, as shown in FIG. A plurality of (11 in the example of FIG. 4) annular projections 112 are formed so that the outer annular projection 112 surrounds the inner annular projection 112 on the upper surface of the substrate 10, and at least of the plurality of annular projections 112. One annular convex portion 112 may be formed so that the amount of upward protrusion is less than the plurality of convex portions 111. For example, the outermost annular projection 112 among the plurality of annular projections 112 is formed so that the amount of upward projection is equal compared to the plurality of projections 111, while the annular projection on the inner side of it is formed. The protrusion 112 may be formed so that the amount of upward protrusion is smaller than that of the plurality of protrusions 111. In addition, at least the first and second annular protrusions 112 counted from the outside are formed so as to reduce the amount of upward projection compared to the plurality of protrusions 111, and the first annular count from the outside The protrusion 112 may be formed so that the amount of upward protrusion is smaller than that of the second annular protrusion 112 counting from the outside in at least a part of the circumferential direction.
当該他の実施形態において、複数の環状凸部１１２のそれぞれが複数の凸部１１１と上方への突出量が等しくなるように形成され、基板保持装置１および基板Ｗの間において複数の環状凸部１１２により画定される複数の上側空間のそれぞれに対応して、基体１０の軸線方向に延在する通気経路１０２の開口が基体１０に形成されていてもよい。当該複数の空間は、最も内側の環状凸部１１２により画定される略円形状の空間と、当該略円形状を一重または多重に取り囲む略円環状の空間と、により構成されている。 In the other embodiment, each of the plurality of annular protrusions 112 is formed so that the amount of upward protrusion is equal to that of the plurality of protrusions 111, and the plurality of annular protrusions are provided between the substrate holding device 1 and the substrate W. Corresponding to each of the plurality of upper spaces defined by 112, an opening of the ventilation path 102 extending in the axial direction of the base 10 may be formed in the base 10. The plurality of spaces are configured by a substantially circular space defined by the innermost annular convex portion 112 and a substantially annular space surrounding the substantially circular shape in a single or multiple manner.
１‥基板保持装置、２‥基台、１０‥基体、１０２‥通気経路、１１１‥凸部、１１２‥環状凸部、１２１‥凸部、１２２‥環状凸部、２０２‥通気経路、Ｗ‥基板。 DESCRIPTION OF SYMBOLS 1 ... Board | substrate holding device, 2 ... Base, 10 ... Base | substrate, 102 ... Ventilation path, 111 ... Convex part, 112 ... Convex part, 121 ... Convex part, 122 ... Convex part, 202 ... Ventilation path, W ... Substrate .
Claims (2)
前記基体の上面が凹曲面状に形成され、
前記基体の上面においてもっとも内側の前記環状凸部を外側の前記環状凸部が一重または多重に囲うように複数の前記環状凸部が形成され、前記複数の環状凸部のうち少なくとも１つの環状凸部が前記複数の凸部よりも上方への突出量が少なくなるように形成され、
前記基体の全体が湾曲形状に形成されている一方、平坦形状に変形可能に構成されていることを特徴とする基板保持装置。 A plate-like base body in which a ventilation path communicating with the upper surface is formed; a plurality of convex portions projecting upward on the upper surface of the base body; and an opening of the ventilation path and the plurality of convex portions projecting upward A substrate holding device in which an annular convex portion surrounding the substrate is formed,
The upper surface of the base is formed in a concave curved surface,
A plurality of the annular projections are formed so that the outer annular projections surround the innermost annular projection on the upper surface of the base in a single or multiple manner, and at least one annular projection of the plurality of annular projections is formed. The portion is formed so that the amount of upward protrusion is less than the plurality of convex portions ,
A substrate holding apparatus, wherein the whole substrate is formed in a curved shape, and is deformable into a flat shape .
前記基体の下面に、下方に突出する複数の凸部と、前記複数の凸部を囲う環状凸部と、が形成されていることを特徴とする基板保持装置。
The substrate holding apparatus according to claim 1 , wherein
A substrate holding apparatus, wherein a plurality of convex portions projecting downward and an annular convex portion surrounding the plurality of convex portions are formed on a lower surface of the base body.
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| JPS59135742A (en) * | 1983-01-25 | 1984-08-04 | Toshiba Corp | Supporting device for semiconductor wafer |
| JPH02123751A (en) * | 1988-11-01 | 1990-05-11 | Mitsubishi Electric Corp | Wafer chuck of semiconductor manufacturing apparatus |
| JPH045646U (en) * | 1990-04-27 | 1992-01-20 | ||
| JPH05304071A (en) * | 1992-04-27 | 1993-11-16 | Nec Kyushu Ltd | Stage of light exposure device |
| JPH1076439A (en) * | 1996-08-30 | 1998-03-24 | Sony Corp | Thin plate holding device |
| JP2004228453A (en) * | 2003-01-27 | 2004-08-12 | Renesas Technology Corp | Method of manufacturing semiconductor device |
| WO2006033498A1 (en) * | 2004-09-24 | 2006-03-30 | Hanmi Semiconductor Co., Ltd. | Chuck table for semiconductor manufacturing process |
| JP6108803B2 (en) * | 2012-12-07 | 2017-04-05 | 日本特殊陶業株式会社 | Substrate holding member |
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