JP6581387B2 - プラズマ処理装置およびプラズマ処理方法 - Google Patents

プラズマ処理装置およびプラズマ処理方法 Download PDF

Info

Publication number
JP6581387B2
JP6581387B2 JP2015096999A JP2015096999A JP6581387B2 JP 6581387 B2 JP6581387 B2 JP 6581387B2 JP 2015096999 A JP2015096999 A JP 2015096999A JP 2015096999 A JP2015096999 A JP 2015096999A JP 6581387 B2 JP6581387 B2 JP 6581387B2
Authority
JP
Japan
Prior art keywords
heater
plasma processing
plasma
temperature
output value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015096999A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016213359A5 (https=
JP2016213359A (ja
Inventor
航平 松田
航平 松田
森　政士
政士 森
敏明 西田
敏明 西田
尚裕 川本
尚裕 川本
均 古林
均 古林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2015096999A priority Critical patent/JP6581387B2/ja
Publication of JP2016213359A publication Critical patent/JP2016213359A/ja
Publication of JP2016213359A5 publication Critical patent/JP2016213359A5/ja
Application granted granted Critical
Publication of JP6581387B2 publication Critical patent/JP6581387B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2015096999A 2015-05-12 2015-05-12 プラズマ処理装置およびプラズマ処理方法 Active JP6581387B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015096999A JP6581387B2 (ja) 2015-05-12 2015-05-12 プラズマ処理装置およびプラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015096999A JP6581387B2 (ja) 2015-05-12 2015-05-12 プラズマ処理装置およびプラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2016213359A JP2016213359A (ja) 2016-12-15
JP2016213359A5 JP2016213359A5 (https=) 2018-01-18
JP6581387B2 true JP6581387B2 (ja) 2019-09-25

Family

ID=57552048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015096999A Active JP6581387B2 (ja) 2015-05-12 2015-05-12 プラズマ処理装置およびプラズマ処理方法

Country Status (1)

Country Link
JP (1) JP6581387B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6983322B2 (ja) 2018-08-02 2021-12-17 株式会社Fuji 大気圧プラズマ発生装置
US20250038019A1 (en) * 2022-09-26 2025-01-30 Hitachi High-Tech Corporation Manufacturing system and method of semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08167590A (ja) * 1994-12-13 1996-06-25 Dainippon Screen Mfg Co Ltd プラズマアッシング方法
JP2005116565A (ja) * 2003-10-02 2005-04-28 Hitachi Kokusai Electric Inc 基板処理装置
JP4786925B2 (ja) * 2005-04-04 2011-10-05 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP5203612B2 (ja) * 2007-01-17 2013-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN101990707B (zh) * 2008-09-30 2013-03-06 东京毅力科创株式会社 基板的异常载置状态的检测方法、基板处理方法、计算机可读取的存储介质以及基板处理装置
JP5616737B2 (ja) * 2009-11-20 2014-10-29 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP2013115403A (ja) * 2011-12-01 2013-06-10 Mitsubishi Heavy Ind Ltd 基板の温度計測装置及び方法、基板の温度調整装置及び方法

Also Published As

Publication number Publication date
JP2016213359A (ja) 2016-12-15

Similar Documents

Publication Publication Date Title
TWI768395B (zh) 電漿處理裝置及電漿處理方法
US10600620B2 (en) Temperature control in RF chamber with heater and air amplifier
KR100572415B1 (ko) 플라즈마 처리 장치
JP6286215B2 (ja) プラズマ処理装置
JP5414172B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP7174687B2 (ja) プラズマ処理装置及びエッチング方法
JP5121684B2 (ja) プラズマ処理装置
US10964513B2 (en) Plasma processing apparatus
JP5657953B2 (ja) プラズマ処理装置
KR20160013004A (ko) 에칭 방법 및 에칭 장치
US11189483B2 (en) Method of manufacturing semiconductor device and non-transitory computer-readable recording medium
US10748779B2 (en) Substrate processing method
JP4256064B2 (ja) プラズマ処理装置の制御方法
JP6581387B2 (ja) プラズマ処理装置およびプラズマ処理方法
KR20200087693A (ko) 처리 방법 및 플라즈마 처리 장치
JP6851510B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP2009206344A (ja) プラズマ処理装置およびプラズマ処理方法
JP2010219198A (ja) プラズマ処理装置
CN113498546B (zh) 等离子处理装置以及等离子处理方法
KR20010101716A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
JP7582749B2 (ja) 温度制御方法及び温度制御装置
TWI910711B (zh) 電漿處理裝置及電漿處理方法
KR101754562B1 (ko) 플라즈마 발생 장치, 그를 포함하는 기판 처리 장치, 및 그 제어 방법
JP2015179775A (ja) 半導体製造装置
JP2016136553A (ja) プラズマ処理装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150513

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170119

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170125

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20170803

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20170804

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171129

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20171129

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180904

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180831

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181019

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190326

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190410

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190801

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190830

R150 Certificate of patent or registration of utility model

Ref document number: 6581387

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350