JP6546646B2 - 薄膜トランジスタ及びその製造方法 - Google Patents
薄膜トランジスタ及びその製造方法 Download PDFInfo
- Publication number
- JP6546646B2 JP6546646B2 JP2017235392A JP2017235392A JP6546646B2 JP 6546646 B2 JP6546646 B2 JP 6546646B2 JP 2017235392 A JP2017235392 A JP 2017235392A JP 2017235392 A JP2017235392 A JP 2017235392A JP 6546646 B2 JP6546646 B2 JP 6546646B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film transistor
- dielectric layer
- thin film
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010409 thin film Substances 0.000 title claims description 177
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000463 material Substances 0.000 claims description 112
- 238000000034 method Methods 0.000 claims description 93
- 239000004065 semiconductor Substances 0.000 claims description 78
- 239000000758 substrate Substances 0.000 claims description 72
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 52
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 44
- 238000005566 electron beam evaporation Methods 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 10
- 239000002086 nanomaterial Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 391
- 230000000052 comparative effect Effects 0.000 description 115
- 238000012360 testing method Methods 0.000 description 48
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 34
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000002041 carbon nanotube Substances 0.000 description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000002109 single walled nanotube Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical group 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910016001 MoSe Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910005913 NiTe Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000003272 mannan oligosaccharides Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66045—Field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
図1を参照すると、本発明の実施例1は、薄膜トランジスタ100を提供する。薄膜トランジスタ100は、ボトムゲート型(Bottom Gate Type) 薄膜トランジスタであり、基板101、ゲート電極102、誘電層103、半導体層104、ソース電極105及びドレイン電極106を含む。ゲート電極102が基板101の表面に設置される。誘電層103が基板101に設置され、ゲート電極102を被覆する。半導体層104が誘電層103の基板101から離れる表面に設置される。ソース電極105及びドレイン電極106が誘電層103の基板101から離れる表面に間隔をあけて設置され、半導体層104とそれぞれ電気的に接続される。半導体層104の、ソース電極105とドレイン電極106との間に位置する領域に、チャンネルが形成される。
表1 実施例1と比較例のプロセス変量及びテスト結果の比較
図7を参照すると、実施例2は、薄膜トランジスタ100Aを提供する。薄膜トランジスタ100Aは、基板101、ゲート電極102、誘電層103、半導体層104、ソース電極105及びドレイン電極106を含む。半導体層104が基板101の表面に設置される。ソース電極105及びドレイン電極106が基板101の表面に間隔をあけて設置され、半導体層104とそれぞれ電気的に接続される。半導体層104の、ソース電極105とドレイン電極106との間に位置する領域に、チャンネルが形成される。誘電層103が半導体層104の基板101から離れる表面に設置され、半導体層104、ソース電極105及びドレイン電極106を被覆する。ゲート電極102は、誘電層103の基板101から離れる表面に設置される。
図11を参照すると、本発明の実施例3は、薄膜トランジスタ100Bを提供する。薄膜トランジスタ100Bは、ボトムゲート型薄膜トランジスタであり、基板101、ゲート電極102、誘電層103、半導体層104、ソース電極105及びドレイン電極106を含む。ゲート電極102が基板101の表面に設置される。誘電層103が基板101に設置され、ゲート電極102を被覆する。半導体層104が誘電層103の基板101から離れる表面に設置される。ソース電極105及びドレイン電極106が誘電層103の基板101から離れる表面に間隔をあけて設置され、半導体層104とそれぞれ電気的に接続される。半導体層104の、ソース電極105とドレイン電極106との間に位置する領域に、チャンネルが形成される。
実施例4の薄膜トランジスタ100Bの構造は、実施例3の薄膜トランジスタ100Bの構造と基本的に同じである。その区別は、第一サブ誘電層1031が特異のヒステリシス材料層であり、マグネトロンスパッタリング法によって製造されたSiO2層であり、第二サブ誘電層1032が正常のヒステリシス材料層であり、電子ビーム蒸発法によって製造されたSiO2層であることである。
図17を参照すると、実施例5は、薄膜トランジスタ100Cを提供する。薄膜トランジスタ100Cは、トップゲート型薄膜トランジスタであり、基板101、ゲート電極102、誘電層103、半導体層104、ソース電極105及びドレイン電極106を含む。半導体層104が基板101の表面に設置される。ソース電極105及びドレイン電極106が基板101の表面に間隔をあけて設置され、半導体層とそれぞれ電気的に接続される。半導体層104の、ソース電極105とドレイン電極106との間に位置する領域に、チャンネルが形成される。誘電層103が半導体層104の基板101から離れる表面に設置され、半導体層104、ソース電極105及びドレイン電極106を被覆する。ゲート電極102は、誘電層103の基板101から離れる表面に設置される。
実施例6における薄膜トランジスタ100Cの構造と実施例5における薄膜トランジスタ100Cの構造は基本的に同じである。その区別は、第一サブ誘電層1031が特異のヒステリシス材料層であり、マグネトロンスパッタリング法によって製造されたSiO2層であり、第二サブ誘電層1032が正常のヒステリシス材料層であり、ALD法によって製造されたAl3O2層であることである。空気を遮断し、及び固定電荷が混在するので、実施例6における薄膜トランジスタ100Cがバイポーラー薄膜トランジスタである。
実施例7における薄膜トランジスタ100Cの構造と実施例5における薄膜トランジスタ100Cの構造は基本的に同じである。その区別は、第一サブ誘電層1031が特異のヒステリシス材料層であり、マグネトロンスパッタリング法によって製造されたSiO2層であり、第二サブ誘電層1032が正常のヒステリシス材料層であり、PECVD法によって製造されたSi3N4層であることである。
実施例9における薄膜トランジスタ100Aの構造と実施例2における薄膜トランジスタ100Aの構造は基本的に同じである。その区別は、半導体層104が二硫化モリブデンという二次元のナノ材料で製造されることである。
実施例10における薄膜トランジスタ100Cの構造と実施例5における薄膜トランジスタ100Cの構造は基本的に同じである。その区別は、第一サブ誘電層1031が特異のヒステリシス材料層であり、マグネトロンスパッタリング法によって製造されたSiO2層であり、第二サブ誘電層1032が正常のヒステリシス材料層であり、ALD法によって製造されたAl3O2層であることである。
実施例11における薄膜トランジスタ100の構造と実施例1における薄膜トランジスタ100の構造は基本的に同じであり、その区別は、誘電層103がマグネトロンスパッタリング法によって製造されたAl2O3層であるだけである。本実施例が異なるマグネトロンスパッタリングのプロセス変量を採用して、厚さが10ナノメートル、20ナノメートル、100ナノメートル、500ナノメートル、1000ナノメートルであるAl2O3層をそれぞれ製造して、これらのAl2O3層を誘電層とする。その結果は、マグネトロンスパッタリング法によって製造されたAl2O3層が特異のヒステリシス材料層であることが表明される。本実施例の薄膜トランジスタ100が比較例2及び比較例3の薄膜トランジスタと比較して、結果は表11を参照する。
図35を参照すると、実施例12は、ヒステリシス曲線が減少され、又は削除された薄膜トランジスタ100Cを採用するデジタル回路10を提供する。デジタル回路10は、二つのバイポーラートップゲート型薄膜トランジスタ100Cを含み、各薄膜トランジスタ100Cは、基板101、ゲート電極102、誘電層103、半導体層104、ソース電極105及びドレイン電極106を含む。誘電層103が二層の構造であり、積層して設置された第一サブ誘電層1031及び第二サブ誘電層1032を含む。二つのバイポーラーの薄膜トランジスタ100Cのゲート電極102が電気的に接続され、且つ二つのバイポーラーの薄膜トランジスタ100Cのソース電極105又はドレイン電極106が電気的に接続される。理解できることは、本実施例のデジタル回路10がインバーターであることである。
図41を参照すると、本実施例は、ヒステリシス曲線が減少され、又は削除された薄膜トランジスタ100Cを採用するデジタル回路10Aを提供する。デジタル回路10Aは、N型のトップゲート型薄膜トランジスタ100C及びP型のボトムゲート型薄膜トランジスタ100Cを含む。N型のトップゲート型薄膜トランジスタ100Cは、基板101、ゲート電極102、誘電層103a、半導体層104a、ソース電極105a及びドレイン電極106を含む。誘電層103aが二層の構造であり、積層して設置された第一サブ誘電層1031及び第二サブ誘電層1032aを含む。P型のトップゲート型薄膜トランジスタ100Cは、基板101、ゲート電極102、誘電層103b、半導体層104b、ソース電極105b及びドレイン電極106を含む。誘電層103bが二層の構造であり、積層して設置された第一サブ誘電層1031及び第二サブ誘電層1032bを含む。N型のトップゲート型薄膜トランジスタ100Cのゲート電極102がP型のトップゲート型薄膜トランジスタ100Cのゲート電極102と電気的に接続され、N型のトップゲート型薄膜トランジスタ100Cのソース電極105aが、P型のトップゲート型薄膜トランジスタ100Cのソース電極105bと電気的に接続され、或いはN型のトップゲート型薄膜トランジスタ100Cのドレイン電極106がP型のトップゲート型薄膜トランジスタ100Cのドレイン電極106と電気的に接続される。本実施例において、デジタル回路10もインバーターである。
図42を参照すると、本実施例は、ヒステリシス曲線が減少され、又は削除された薄膜トランジスタ100B及び薄膜トランジスタ100Cを採用するデジタル回路10Bを提供する。デジタル回路10Bは、N型のトップゲート型薄膜トランジスタ100C及びP型のボトムゲート型薄膜トランジスタ100Bを含む。N型のトップゲート型薄膜トランジスタ100Cは、基板101、ゲート電極102、誘電層103a、半導体層104a、ソース電極105a及びドレイン電極106aを含む。誘電層103aが二層の構造であり、積層して設置された第一サブ誘電層1031a及び第二サブ誘電層1032aを含む。P型のトップゲート型薄膜トランジスタ100Bは、ゲート電極102、誘電層103b、半導体層104b、ソース電極105b及びドレイン電極106bを含む。誘電層103bが二層の構造であり、積層して設置された第一サブ誘電層1031b及び第二サブ誘電層1032bを含む。N型のトップゲート型薄膜トランジスタ100Cのゲート電極102がP型のトップゲート型薄膜トランジスタ100Bのゲート電極102と電気的に接続され、N型のトップゲート型薄膜トランジスタ100Cのソース電極105aが、P型のトップゲート型薄膜トランジスタ100Bのソース電極105bと電気的に接続され、或いはN型のトップゲート型薄膜トランジスタ100Cのドレイン電極106aがP型のトップゲート型薄膜トランジスタ100Bのドレイン電極106bと電気的に接続される。本実施例において、デジタル回路10もインバーターである。
100、100A、100B、100C 薄膜トランジスタ
101 基板
102 ゲート電極
103、103a、103b 誘電層
1031、1031a、1031b 第一サブ誘電層
1032、1032a、1032b 第二サブ誘電層
104、104a、104b 半導体層
105、105a、105b ソース電極
106、106a、106b ドレイン電極
Claims (4)
- 基板、ゲート電極、誘電層、半導体層、ソース電極及びドレイン電極を含み、
前記ゲート電極が前記基板の表面に設置され、
前記誘電層が前記基板に設置され、前記ゲート電極を被覆し、前記誘電層が二層の構造であり、積層して設置された第一サブ誘電層及び第二サブ誘電層を含み、
前記半導体層が前記誘電層の前記基板から離れる表面に設置され、複数のナノ半導体材料を含み、
前記ソース電極及び前記ドレイン電極が前記誘電層の前記基板から離れる表面に間隔をあけて設置され、それぞれ前記半導体層と電気的に接続される薄膜トランジスタにおいて、
前記第一サブ誘電層が特異のヒステリシス材料層であり、前記ゲート電極と直接に接触して、前記第二サブ誘電層が正常のヒステリシス材料層であり、前記第一サブ誘電層と前記半導体層との間に設置され、
前記第一サブ誘電層の特異のヒステリシス材料層は、マグネトロンスパッタリング法によって製造されたSiO 2 層であり、前記第二サブ誘電層の正常のヒステリシス材料層は、マグネトロンスパッタリング法と異なる方法によって製造されたSiO 2 層であることを特徴とする薄膜トランジスタ。 - 前記マグネトロンスパッタリング法と異なる方法は、ALD法、電子ビーム蒸発法、熱酸化法、PECVD法のいずれかであることを特徴とする、請求項1に記載の薄膜トランジスタ。
- 基板を提供するステップ、
前記基板の表面にゲート電極を沈積するステップ、
前記基板の表面にマグネトロンスパッタリング法によって、SiO 2 層である特異のヒステリシス材料層を製造し、該特異のヒステリシス材料層を第一サブ誘電層として、該特異のヒステリシス材料層に前記ゲート電極を被覆させ、該ゲート電極と直接に接触させるステップ、
前記第一サブ誘電層の表面にマグネトロンスパッタリング法と異なる方法によって、SiO 2 層である正常のヒステリシス材料層を製造し、該正常のヒステリシス材料層を第二サブ誘電層として、二層の構造を有する誘電層を形成するステップ、
前記誘電層の表面に半導体層を製造し、該半導体層が複数のナノ材料を含むステップ、
前記誘電層の表面にソース電極及びドレイン電極を製造し、該ソース電極及びドレイン電極に前記半導体層と電気的に接続させるステップを含むことを特徴とする薄膜トランジスタの製造方法。 - 前記マグネトロンスパッタリング法と異なる方法は、ALD法、電子ビーム蒸発法、熱酸化法、PECVD法のいずれかであることを特徴とする、請求項3に記載の薄膜トランジスタの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611114617.1 | 2016-12-07 | ||
CN201611114617.1A CN108172624B (zh) | 2016-12-07 | 2016-12-07 | 一种薄膜晶体管及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018098502A JP2018098502A (ja) | 2018-06-21 |
JP6546646B2 true JP6546646B2 (ja) | 2019-07-17 |
Family
ID=62240145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017235392A Active JP6546646B2 (ja) | 2016-12-07 | 2017-12-07 | 薄膜トランジスタ及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10475936B2 (ja) |
JP (1) | JP6546646B2 (ja) |
CN (1) | CN108172624B (ja) |
TW (1) | TWI630723B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11222959B1 (en) * | 2016-05-20 | 2022-01-11 | Hrl Laboratories, Llc | Metal oxide semiconductor field effect transistor and method of manufacturing same |
CN110676341B (zh) | 2018-07-03 | 2021-06-25 | 清华大学 | 半导体结构、光电器件、光探测器及光探测仪 |
CN109346410A (zh) * | 2018-09-18 | 2019-02-15 | 山东大学 | 一种二硫化钼晶体管及其制造方法 |
CN109378273A (zh) * | 2018-09-18 | 2019-02-22 | 山东大学 | 一种二硫化钨晶体管及其制造方法 |
CN109411544B (zh) * | 2018-09-26 | 2021-05-18 | 上海集成电路研发中心有限公司 | 一种过渡金属硫族化合物晶体管及其制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3696196B2 (ja) | 2002-11-01 | 2005-09-14 | 株式会社東芝 | 半導体装置 |
KR101160489B1 (ko) * | 2006-04-07 | 2012-06-26 | 엘지디스플레이 주식회사 | 박막트랜지스터 어레이기판과 그 제조방법 |
JP5471000B2 (ja) | 2008-04-24 | 2014-04-16 | 東レ株式会社 | 電界効果型トランジスタ |
TWI450399B (zh) * | 2008-07-31 | 2014-08-21 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
JP2011176168A (ja) | 2010-02-25 | 2011-09-08 | Nippon Telegr & Teleph Corp <Ntt> | 半導体メモリ |
CN102130009B (zh) * | 2010-12-01 | 2012-12-05 | 北京大学深圳研究生院 | 一种晶体管的制造方法 |
CN104103695B (zh) * | 2013-04-02 | 2017-01-25 | 清华大学 | 薄膜晶体管及其制备方法 |
US10436746B2 (en) * | 2016-08-29 | 2019-10-08 | The Regents Of The University Of California | High performance chemical and bio sensors using metal oxide semiconductors |
-
2016
- 2016-12-07 CN CN201611114617.1A patent/CN108172624B/zh active Active
- 2016-12-17 TW TW105141972A patent/TWI630723B/zh active
-
2017
- 2017-11-17 US US15/815,983 patent/US10475936B2/en active Active
- 2017-12-07 JP JP2017235392A patent/JP6546646B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN108172624A (zh) | 2018-06-15 |
US10475936B2 (en) | 2019-11-12 |
CN108172624B (zh) | 2020-11-06 |
JP2018098502A (ja) | 2018-06-21 |
TW201822358A (zh) | 2018-06-16 |
US20180158960A1 (en) | 2018-06-07 |
TWI630723B (zh) | 2018-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6648098B2 (ja) | 薄膜トランジスタ及びその製造方法 | |
JP6546646B2 (ja) | 薄膜トランジスタ及びその製造方法 | |
JP6662838B2 (ja) | 薄膜トランジスタ及びその製造方法 | |
JP6546645B2 (ja) | 薄膜トランジスタ及びその製造方法 | |
JP6554527B2 (ja) | デジタル回路 | |
JP6444480B2 (ja) | デジタル回路 | |
CN104091743A (zh) | 一种自对准栅极结构纳米线冷阴极电子源阵列的制作方法及其结构 | |
Zhao et al. | Inverse Hysteresis and Ultrasmall Hysteresis Thin‐Film Transistors Fabricated Using Sputtered Dielectrics | |
JP5289678B2 (ja) | 電界効果型トランジスタ | |
JP2013145904A (ja) | 電界効果型トランジスタの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20181025 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181031 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190104 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190605 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190621 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6546646 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |