JP6662838B2 - 薄膜トランジスタ及びその製造方法 - Google Patents
薄膜トランジスタ及びその製造方法 Download PDFInfo
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- JP6662838B2 JP6662838B2 JP2017235403A JP2017235403A JP6662838B2 JP 6662838 B2 JP6662838 B2 JP 6662838B2 JP 2017235403 A JP2017235403 A JP 2017235403A JP 2017235403 A JP2017235403 A JP 2017235403A JP 6662838 B2 JP6662838 B2 JP 6662838B2
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- 239000010409 thin film Substances 0.000 title claims description 176
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 claims description 105
- 239000000463 material Substances 0.000 claims description 91
- 239000004065 semiconductor Substances 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 77
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 52
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 42
- 238000005566 electron beam evaporation Methods 0.000 claims description 10
- 239000002086 nanomaterial Substances 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical group 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 372
- 230000000052 comparative effect Effects 0.000 description 108
- 238000012360 testing method Methods 0.000 description 46
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 14
- 230000000694 effects Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000002041 carbon nanotube Substances 0.000 description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000002109 single walled nanotube Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910016001 MoSe Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 101710116850 Molybdenum cofactor sulfurase 2 Proteins 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910005913 NiTe Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000037230 mobility Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G39/00—Compounds of molybdenum
- C01G39/06—Sulfides
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Description
図1を参照すると、本発明の実施例1は、薄膜トランジスタ100を提供する。薄膜トランジスタ100は、ボトムゲート型(Bottom Gate Type) 薄膜トランジスタであり、基板101、ゲート電極102、誘電層103、半導体層104、ソース電極105及びドレイン電極106を含む。ゲート電極102が基板101の表面に設置される。誘電層103が基板101に設置され、ゲート電極102を被覆する。半導体層104が誘電層103の基板101から離れる表面に設置される。ソース電極105及びドレイン電極106が誘電層103の基板101から離れる表面に間隔をあけて設置され、半導体層104とそれぞれ電気的に接続される。半導体層104の、ソース電極105とドレイン電極106との間に位置する領域に、チャンネルが形成される。
表1 実施例1と比較例のプロセス変量及びテスト結果の比較
図7を参照すると、実施例2は、薄膜トランジスタ100Aを提供する。薄膜トランジスタ100Aは、基板101、ゲート電極102、誘電層103、半導体層104、ソース電極105及びドレイン電極106を含む。半導体層104が基板101の表面に設置される。ソース電極105及びドレイン電極106が基板101の表面に間隔をあけて設置され、半導体層104とそれぞれ電気的に接続される。半導体層104の、ソース電極105とドレイン電極106との間に位置する領域に、チャンネルが形成される。誘電層103が半導体層104の基板101から離れる表面に設置され、半導体層104、ソース電極105及びドレイン電極106を被覆する。ゲート電極102は、誘電層103の基板101から離れる表面に設置される。
図11を参照すると、本発明の実施例3は、薄膜トランジスタ100Bを提供する。薄膜トランジスタ100Bは、ボトムゲート型薄膜トランジスタであり、基板101、ゲート電極102、誘電層103、半導体層104、ソース電極105及びドレイン電極106を含む。ゲート電極102が基板101の表面に設置される。誘電層103が基板101に設置され、ゲート電極102を被覆する。半導体層104が誘電層103の基板101から離れる表面に設置される。ソース電極105及びドレイン電極106が誘電層103の基板101から離れる表面に間隔をあけて設置され、半導体層104とそれぞれ電気的に接続される。半導体層104の、ソース電極105とドレイン電極106との間に位置する領域に、チャンネルが形成される。
実施例4の薄膜トランジスタ100Bの構造は、実施例3の薄膜トランジスタ100Bの構造と基本的に同じである。その区別は、第一サブ誘電層1031が特異のヒステリシス材料層であり、マグネトロンスパッタリング法によって製造されたSiO2層であり、第二サブ誘電層1032が正常のヒステリシス材料層であり、電子ビーム蒸発法によって製造されたSiO2層であることである。
図17を参照すると、実施例5は、薄膜トランジスタ100Cを提供する。薄膜トランジスタ100Cは、トップゲート型薄膜トランジスタであり、基板101、ゲート電極102、誘電層103、半導体層104、ソース電極105及びドレイン電極106を含む。半導体層104が基板101の表面に設置される。ソース電極105及びドレイン電極106が基板101の表面に間隔をあけて設置され、半導体層とそれぞれ電気的に接続される。半導体層104の、ソース電極105とドレイン電極106との間に位置する領域に、チャンネルが形成される。誘電層103が半導体層104の基板101から離れる表面に設置され、半導体層104、ソース電極105及びドレイン電極106を被覆する。ゲート電極102は、誘電層103の基板101から離れる表面に設置される。
実施例6における薄膜トランジスタ100Cの構造と実施例5における薄膜トランジスタ100Cの構造は基本的に同じである。その区別は、第一サブ誘電層1031が特異のヒステリシス材料層であり、マグネトロンスパッタリング法によって製造されたSiO2層であり、第二サブ誘電層1032が正常のヒステリシス材料層であり、ALD法によって製造されたAl3O2層であることである。空気を遮断し、及び固定電荷が混在するので、実施例6における薄膜トランジスタ100Cがバイポーラー薄膜トランジスタである。
実施例7における薄膜トランジスタ100Cの構造と実施例5における薄膜トランジスタ100Cの構造は基本的に同じである。その区別は、第一サブ誘電層1031が特異のヒステリシス材料層であり、マグネトロンスパッタリング法によって製造されたSiO2層であり、第二サブ誘電層1032が正常のヒステリシス材料層であり、PECVD法によって製造されたSi3N4層であることである。
実施例9における薄膜トランジスタ100Aの構造と実施例2における薄膜トランジスタ100Aの構造は基本的に同じである。その区別は、半導体層104が二硫化モリブデンという二次元のナノ材料で製造されることである。
実施例10における薄膜トランジスタ100Cの構造と実施例5における薄膜トランジスタ100Cの構造は基本的に同じである。その区別は、第一サブ誘電層1031が特異のヒステリシス材料層であり、マグネトロンスパッタリング法によって製造されたSiO2層であり、第二サブ誘電層1032が正常のヒステリシス材料層であり、ALD法によって製造されたAl3O2層であることである。
実施例11における薄膜トランジスタ100の構造と実施例1における薄膜トランジスタ100の構造は基本的に同じであり、その区別は、誘電層103がマグネトロンスパッタリング法によって製造されたAl2O3層であるだけである。本実施例が異なるマグネトロンスパッタリングのプロセス変量を採用して、厚さが10ナノメートル、20ナノメートル、100ナノメートル、500ナノメートル、1000ナノメートルであるAl2O3層をそれぞれ製造して、これらのAl2O3層を誘電層とする。その結果は、マグネトロンスパッタリング法によって製造されたAl2O3層が特異のヒステリシス材料層であることが表明される。本実施例の薄膜トランジスタ100が比較例2及び比較例3の薄膜トランジスタと比較して、結果は表11を参照する。
図35を参照すると、実施例12は、ヒステリシス曲線が減少され、又は削除された薄膜トランジスタ100Cを採用するデジタル回路10を提供する。デジタル回路10は、二つのバイポーラートップゲート型薄膜トランジスタ100Cを含み、各薄膜トランジスタ100Cは、基板101、ゲート電極102、誘電層103、半導体層104、ソース電極105及びドレイン電極106を含む。誘電層103が二層の構造であり、積層して設置された第一サブ誘電層1031及び第二サブ誘電層1032を含む。二つのバイポーラーの薄膜トランジスタ100Cのゲート電極102が電気的に接続され、且つ二つのバイポーラーの薄膜トランジスタ100Cのソース電極105又はドレイン電極106が電気的に接続される。理解できることは、本実施例のデジタル回路10がインバーターであることである。
図41を参照すると、本実施例は、ヒステリシス曲線が減少され、又は削除された薄膜トランジスタ100Cを採用するデジタル回路10Aを提供する。デジタル回路10Aは、N型のトップゲート型薄膜トランジスタ100C及びP型のボトムゲート型薄膜トランジスタ100Cを含む。N型のトップゲート型薄膜トランジスタ100Cは、基板101、ゲート電極102、誘電層103a、半導体層104a、ソース電極105a及びドレイン電極106を含む。誘電層103aが二層の構造であり、積層して設置された第一サブ誘電層1031及び第二サブ誘電層1032aを含む。P型のトップゲート型薄膜トランジスタ100Cは、基板101、ゲート電極102、誘電層103b、半導体層104b、ソース電極105b及びドレイン電極106を含む。誘電層103bが二層の構造であり、積層して設置された第一サブ誘電層1031及び第二サブ誘電層1032bを含む。N型のトップゲート型薄膜トランジスタ100Cのゲート電極102がP型のトップゲート型薄膜トランジスタ100Cのゲート電極102と電気的に接続され、N型のトップゲート型薄膜トランジスタ100Cのソース電極105aが、P型のトップゲート型薄膜トランジスタ100Cのソース電極105bと電気的に接続され、或いはN型のトップゲート型薄膜トランジスタ100Cのドレイン電極106がP型のトップゲート型薄膜トランジスタ100Cのドレイン電極106と電気的に接続される。本実施例において、デジタル回路10もインバーターである。
図42を参照すると、本実施例は、ヒステリシス曲線が減少され、又は削除された薄膜トランジスタ100B及び薄膜トランジスタ100Cを採用するデジタル回路10Bを提供する。デジタル回路10Bは、N型のトップゲート型薄膜トランジスタ100C及びP型のボトムゲート型薄膜トランジスタ100Bを含む。N型のトップゲート型薄膜トランジスタ100Cは、基板101、ゲート電極102、誘電層103a、半導体層104a、ソース電極105a及びドレイン電極106aを含む。誘電層103aが二層の構造であり、積層して設置された第一サブ誘電層1031a及び第二サブ誘電層1032aを含む。P型のトップゲート型薄膜トランジスタ100Bは、ゲート電極102、誘電層103b、半導体層104b、ソース電極105b及びドレイン電極106bを含む。誘電層103bが二層の構造であり、積層して設置された第一サブ誘電層1031b及び第二サブ誘電層1032bを含む。N型のトップゲート型薄膜トランジスタ100Cのゲート電極102がP型のトップゲート型薄膜トランジスタ100Bのゲート電極102と電気的に接続され、N型のトップゲート型薄膜トランジスタ100Cのソース電極105aが、P型のトップゲート型薄膜トランジスタ100Bのソース電極105bと電気的に接続され、或いはN型のトップゲート型薄膜トランジスタ100Cのドレイン電極106aがP型のトップゲート型薄膜トランジスタ100Bのドレイン電極106bと電気的に接続される。本実施例において、デジタル回路10もインバーターである。
100、100A、100B、100C 薄膜トランジスタ
101 基板
102 ゲート電極
103、103a、103b 誘電層
1031、1031a、1031b 第一サブ誘電層
1032、1032a、1032b 第二サブ誘電層
104、104a、104b 半導体層
105、105a、105b ソース電極
106、106a、106b ドレイン電極
Claims (4)
- 基板、ゲート電極、誘電層、半導体層、ソース電極及びドレイン電極を含み、
前記半導体層が前記基板の表面に設置され、複数のナノ半導体材料を含み、
前記ソース電極及び前記ドレイン電極が前記基板に間隔をあけて設置され、それぞれ前記半導体層と電気的に接続され、
前記誘電層が前記半導体層の前記基板から離れる表面に設置され、前記半導体層、前記ソース電極及び前記ドレイン電極を被覆し、前記誘電層が二層の構造であり、積層して設置された第一サブ誘電層及び第二サブ誘電層を含み、
前記ゲート電極が前記誘電層の前記基板から離れる表面に設置される薄膜トランジスタにおいて、
前記第一サブ誘電層がマグネトロンスパッタリング法によって製造された特異のヒステリシス材料層のSiO 2 層であり、前記ゲート電極と直接に接触され、
前記第二サブ誘電層がマグネトロンスパッタリング法と異なる方法によって製造された正常のヒステリシス材料層の金属酸化物層であることを特徴とする薄膜トランジスタ。 - 前記マグネトロンスパッタリング法と異なる方法は、ALD法、電子ビーム蒸発法、熱酸化法、PECVD法のいずれかであることを特徴とする、請求項1に記載の薄膜トランジスタ。
- 基板を提供するステップ、
前記基板の表面に半導体層を製造し、該半導体層が複数のナノ材料を含むステップ、
前記基板にソース電極とドレイン電極を製造し、該ソース電極及びドレイン電極を前記半導体層と電気的に接続させるステップ、
前記半導体層の前記基板から離れる表面に、マグネトロンスパッタリング法と異なる方法によって、金属酸化物層を製造し、該金属酸化物層を第二サブ誘電層として、該金属酸化物層に前記半導体層、前記ソース電極及び前記ドレイン電極を被覆させるステップ、
前記第二サブ誘電層の前記基板から離れる表面にマグネトロンスパッタリング法によって、SiO 2 層を製造し、該SiO 2 層を第一サブ誘電層として、二層の構造を有する誘電層を形成するステップ、
前記第一サブ誘電層の前記基板から離れる表面にゲート電極を製造し、該ゲート電極を前記誘電層と直接に接触させるステップを含むことを特徴とする薄膜トランジスタの製造方法。 - 前記マグネトロンスパッタリング法と異なる方法は、ALD法、電子ビーム蒸発法、熱酸化法、PECVD法のいずれかであることを特徴とする、請求項3に記載の薄膜トランジスタの製造方法。
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