JP6540977B1 - フェライト焼結体およびそれを用いた電子部品 - Google Patents
フェライト焼結体およびそれを用いた電子部品 Download PDFInfo
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- JP6540977B1 JP6540977B1 JP2018005571A JP2018005571A JP6540977B1 JP 6540977 B1 JP6540977 B1 JP 6540977B1 JP 2018005571 A JP2018005571 A JP 2018005571A JP 2018005571 A JP2018005571 A JP 2018005571A JP 6540977 B1 JP6540977 B1 JP 6540977B1
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- oxide
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- ferrite
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- 229910000859 α-Fe Inorganic materials 0.000 title claims abstract description 63
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 35
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011787 zinc oxide Substances 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 229910052810 boron oxide Inorganic materials 0.000 claims abstract description 12
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910000480 nickel oxide Inorganic materials 0.000 claims abstract description 9
- 239000005751 Copper oxide Substances 0.000 claims abstract description 8
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 8
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 25
- 230000035699 permeability Effects 0.000 abstract description 25
- 238000010304 firing Methods 0.000 description 15
- 239000002245 particle Substances 0.000 description 12
- 239000000843 powder Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- 239000002131 composite material Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 238000001354 calcination Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000009766 low-temperature sintering Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910017752 Cu-Zn Inorganic materials 0.000 description 1
- 229910017943 Cu—Zn Inorganic materials 0.000 description 1
- -1 Mn 3 O 4 Chemical compound 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910007565 Zn—Cu Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000007580 dry-mixing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
- H01F1/34—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
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Abstract
【解決手段】 主成分と副成分とを有し、前記主成分が、酸化鉄をFe2O3換算で48.65〜49.45モル%、酸化銅をCuO換算で2〜16モル%、酸化亜鉛をZnO換算で28.00〜33.00モル%、残部が酸化ニッケルで構成され、前記副成分として、酸化ホウ素を、前記主成分100重量部に対してB2O3換算で5〜100ppm含有し平均結晶粒径が2〜30μmである、フェライト焼結体。
【選択図】図1
Description
主成分と副成分とを有し、
前記主成分が、酸化鉄をFe2O3換算で48.65〜49.45モル%、酸化銅をCuO換算で2〜16モル%、酸化亜鉛をZnO換算で28.00〜33.00モル%、残部が酸化ニッケルで構成され、
前記副成分として、酸化ホウ素を、前記主成分100重量部に対してB2O3換算で5〜100ppm含有し、
平均結晶粒径が2〜30μmであることを特徴とする。
まず、本発明に係る電子部品の一実施形態として、積層型インダクタについて説明する。図1に示すように、本発明の一実施形態に係る積層型インダクタ1は、素子2と端子電極3とを有する。素子2は、フェライト層4を介してコイル導体5が3次元的かつ螺旋状に形成されたグリーンの積層体を焼成して得られる。フェライト層4は、本発明の一実施形態に係るフェライト焼結体で構成してある。素子2の両端に端子電極3を形成し、引出電極5a、5bを介して端子電極3と接続することで積層型インダクタ1が得られる。素子2の形状に特に制限はないが、通常、直方体状とされる。また、その寸法にも特に制限はなく、用途に応じて適当な寸法とすればよい。
なお、平均結晶粒径とは、所定数の結晶粒子の結晶粒径から算出された体積分布におけるメジアン径(D50粒径、50%粒径)のことである。具体的には、必要に応じて化学エッチングなどで適切に処理されたフェライト焼結体の切断面を、たとえば光学顕微鏡もしくはSEMで観察して、所定数の結晶粒子の結晶粒径から体積分布が算出される。なお、各結晶粒子の粒径は、たとえば、各結晶粒子の面積に相当する円と仮定した円相当径(ヘイウッド径)として求めることができる。また、平均結晶粒径の測定を行う粒子の数は、通常100個以上とする。
なお、フェライト焼結体の密度は、ディスク形状の成型体を900℃で焼成して得られた焼結体の寸法および重量から算出する。
なお、キュリー温度Tcは、JIS−C−2560−1、2に基づき測定する。
なお、比抵抗ρは、In−Ga電極を付したフェライト焼結体の直流抵抗値を測定して求めることができる。比抵抗ρは、IRメーターを用いて測定できる。
なお、透磁率μ’は、トロイダルコア形状のフェライト焼結体に銅線ワイヤを10ターン巻きつけて測定する。透磁率μ’は、LCRメータを用いて測定できる。測定条件は、周波数100kHz、温度25℃とする。
フェライト焼結体の切断面を必要に応じて化学エッチングなどで適切に処理し、光学顕微鏡もしくはSEMで観察して、100個以上の結晶粒子の結晶粒径から体積分布を算出した。そして、その体積分布におけるメジアン径(D50粒径、50%粒径)を平均結晶粒径とした。なお、各結晶粒子の粒径は、各結晶粒子の面積に相当する円と仮定した円相当径(ヘイウッド径)に基づいて求めた。
サンプルに含まれる成分の含有量を、Fe、Cu、Zn、Niについては蛍光X線分析装置(XRF)を用いて測定し、B、Si、ZrについてはICP発光分光分析法(ICP―AES)またはICP質量分析計(ICP−MS)を用いて測定した。なお、表1に記載した各成分の含有量は、それぞれFe2O3、CuO、ZnO、NiO、B2O3、SiO2、ZrO2に換算した値である。
フェライト焼結体の密度は、ディスク形状の成型体を900℃で焼成して得られた焼結体の寸法および重量から算出した。
トロイダルコアサンプルに銅線ワイヤを10ターン巻きつけ、LCRメーター(ヒューレットパッカード社製4285A)を使用して、透磁率μ’を測定した。測定条件としては、測定周波数100kHz、測定温度25℃とした。
ディスクサンプルの両面にIn−Ga電極を塗り、直流抵抗値を測定し、比抵抗ρを求めた(単位:Ω・m)。測定はIRメーター(HEWLETT PACKARD社製4329A)を用いて行った。
キュリー温度Tcは、JIS−C−2560−1、2に基づき測定した。
2… 素子
3… 端子電極
4… 積層体
5… コイル導体
5a、5b… 引出電極
10… LC複合電子部品
12… インダクタ部
14… コンデンサ部
Claims (2)
- 主成分と副成分とを有し、
前記主成分が、酸化鉄をFe2O3換算で48.65〜49.45モル%、酸化銅をCuO換算で4〜14モル%、酸化亜鉛をZnO換算で28.00〜32.00モル%、残部が酸化ニッケルで構成され、
前記副成分として、酸化ホウ素を、前記主成分100重量部に対してB2O3換算で5〜100ppm含有し、酸化ケイ素を、前記主成分100重量部に対してSiO 2 換算で5〜500ppm含有し、酸化ジルコニウムを、前記主成分100重量部に対してZrO 2 換算で5〜900ppm含有し、
平均結晶粒径が4〜30μmである、フェライト焼結体。 - 請求項1に記載のフェライト焼結体を有する電子部品。
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